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Atomic-layer do** of SiGe heterostructures for atomic-precision donor devices
Authors:
E. Bussmann,
John King Gamble,
J. C. Koepke,
D. Laroche,
S. H. Huang,
Y. Chuang,
J. -Y. Li,
C. W. Liu,
B. S. Swartzentruber,
M. P. Lilly,
M. S. Carroll,
T. -M. Lu
Abstract:
As a first step to porting scanning tunneling microscopy methods of atomic-precision fabrication to a strained-Si/SiGe platform, we demonstrate post-growth P atomic-layer do** of SiGe heterostructures. To preserve the substrate structure and elastic state, we use a T $\leq 800^\circ$C process to prepare clean Si$_{0.86}$Ge$_{0.14}$ surfaces suitable for atomic-precision fabrication. P-saturated…
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As a first step to porting scanning tunneling microscopy methods of atomic-precision fabrication to a strained-Si/SiGe platform, we demonstrate post-growth P atomic-layer do** of SiGe heterostructures. To preserve the substrate structure and elastic state, we use a T $\leq 800^\circ$C process to prepare clean Si$_{0.86}$Ge$_{0.14}$ surfaces suitable for atomic-precision fabrication. P-saturated atomic-layer do** is incorporated and capped with epitaxial Si under a thermal budget compatible with atomic-precision fabrication. Hall measurements at T$=0.3$ K show that the doped heterostructure has R$_{\square}=570\pm30$ $Ω$, yielding an electron density $n_{e}=2.1\pm0.1\times10^{14}$cm$^{-2}$ and mobility $μ_e=52\pm3$ cm$^{2}$ V$^{-1}$ s$^{-1}$, similar to saturated atomic-layer do** in pure Si and Ge. The magnitude of $μ_e$ and the complete absence of Shubnikov-de Haas oscillations in magnetotransport measurements indicate that electrons are overwhelmingly localized in the donor layer, and not within a nearby buried Si well. This conclusion is supported by self-consistent Schrödinger-Poisson calculations that predict electron occupation primarily in the donor layer.
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Submitted 17 October, 2017;
originally announced October 2017.
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Heterogeneous nucleation of pits via step pinning during Si(100) homoepitaxy
Authors:
E. N. Yitamben,
R. E. Butera,
B. S. Swartzentruber,
R. J. Simonson,
S. Misra,
M. S. Carroll,
E. Bussmann
Abstract:
Using scanning tunneling microscopy (STM), we investigate oxide-induced growth pits in Si thin films deposited by molecular beam epitaxy. In the transition temperature range from 2D adatom islanding to step-flow growth, systematic controlled air leaks into the growth chamber induce pits in the growth surface. We show that pits are also correlated with oxygen-contaminated flux from Si sublimation s…
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Using scanning tunneling microscopy (STM), we investigate oxide-induced growth pits in Si thin films deposited by molecular beam epitaxy. In the transition temperature range from 2D adatom islanding to step-flow growth, systematic controlled air leaks into the growth chamber induce pits in the growth surface. We show that pits are also correlated with oxygen-contaminated flux from Si sublimation sources. From a thermodynamic standpoint, multilayer growth pits are unexpected in relaxed homoepitaxial growth, whereas oxidation is a known cause for step pinning, roughening, and faceting on elemental surfaces, both with and without growth flux. Not surprisingly, pits are thermodynamically metastable and heal by annealing to recover a smooth periodic step arrangement. STM reveals new details about the pits' atomistic origins and growth dynamics. We give a model for heterogeneous nucleation of pits by preferential adsorption of Å-sized oxide nuclei at intrinsic growth antiphase boundaries, and subsequent step pinning and bunching around the nuclei.
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Submitted 15 June, 2017;
originally announced June 2017.
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Diameter-Dependent Electronic Transport Properties of Au-Catalyst/Ge-Nanowire Schottky Diodes
Authors:
François Léonard,
A. Alec Talin,
B. S. Swartzentruber,
S. T. Picraux
Abstract:
We present electronic transport measurements in individual Au-catalyst/Ge-nanowire interfaces demonstrating the presence of a Schottky barrier. Surprisingly, the small-bias conductance density increases with decreasing diameter. Theoretical calculations suggest that this effect arises because electron-hole recombination in the depletion region is the dominant charge transport mechanism, with a d…
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We present electronic transport measurements in individual Au-catalyst/Ge-nanowire interfaces demonstrating the presence of a Schottky barrier. Surprisingly, the small-bias conductance density increases with decreasing diameter. Theoretical calculations suggest that this effect arises because electron-hole recombination in the depletion region is the dominant charge transport mechanism, with a diameter dependence of both the depletion width and the electron-hole recombination time. The recombination time is dominated by surface contributions and depends linearly on the nanowire diameter.
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Submitted 6 March, 2009;
originally announced March 2009.
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Unusually strong space-charge-limited current in thin wires
Authors:
A. Alec Talin,
François Léonard,
B. S. Swartzentruber,
Xin Wang,
Stephen D. Hersee
Abstract:
The current-voltage characteristics of thin wires are often observed to be nonlinear, and this behavior has been ascribed to Schottky barriers at the contacts. We present electronic transport measurements on GaN nanorods and demonstrate that the nonlinear behavior originates instead from space-charge-limited current. A theory of space-charge-limited current in thin wires corroborates the experim…
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The current-voltage characteristics of thin wires are often observed to be nonlinear, and this behavior has been ascribed to Schottky barriers at the contacts. We present electronic transport measurements on GaN nanorods and demonstrate that the nonlinear behavior originates instead from space-charge-limited current. A theory of space-charge-limited current in thin wires corroborates the experiments, and shows that poor screening in high aspect ratio materials leads to a dramatic enhancement of space-charge limited current, resulting in new scaling in terms of the aspect ratio.
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Submitted 13 August, 2008;
originally announced August 2008.
