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Low-density superconductivity in SrTiO$_3$ bounded by the adiabatic criterion
Authors:
Hyeok Yoon,
Adrian G. Swartz,
Shannon P. Harvey,
Hisashi Inoue,
Yasuyuki Hikita,
Yue Yu,
Suk Bum Chung,
Srinivas Raghu,
Harold Y. Hwang
Abstract:
SrTiO$_3$ exhibits superconductivity for carrier densities $10^{19}-10^{21}$ cm$^{-3}$. Across this range, the Fermi level traverses a number of vibrational modes in the system, making it ideal for studying dilute superconductivity. We use high-resolution planar-tunneling spectroscopy to probe chemically-doped SrTiO$_3$ across the superconducting dome. The over-doped superconducting boundary align…
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SrTiO$_3$ exhibits superconductivity for carrier densities $10^{19}-10^{21}$ cm$^{-3}$. Across this range, the Fermi level traverses a number of vibrational modes in the system, making it ideal for studying dilute superconductivity. We use high-resolution planar-tunneling spectroscopy to probe chemically-doped SrTiO$_3$ across the superconducting dome. The over-doped superconducting boundary aligns, with surprising precision, to the Fermi energy crossing the Debye energy. Superconductivity emerges with decreasing density, maintaining throughout the Bardeen-Cooper-Schrieffer (BCS) gap to transition-temperature ratio, despite being in the anti-adiabatic regime. At lowest superconducting densities, the lone remaining adiabatic phonon van Hove singularity is the soft transverse-optic mode, associated with the ferroelectric instability. We suggest a scenario for pairing mediated by this mode in the presence of spin-orbit coupling, which naturally accounts for the superconducting dome and BCS ratio.
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Submitted 20 June, 2021;
originally announced June 2021.
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Concomitant appearance of conductivity and superconductivity in (111)LaAlO3/SrTiO3 interface with metal cap**
Authors:
R. S. Bisht,
M. Mograbi,
P. K. Rout,
G. Tuvia,
Y. Dagan,
Hyeok Yoon,
A. G. Swartz,
H. Y. Hwang,
L. L. Li,
R. Pentcheva
Abstract:
In polar-oxide interfaces, a certain number of monolayers (ML) is needed for conductivity to appear. This threshold for conductivity is explained by accumulating sufficient electric potential to initiate charge transfer to the interface. Here we study experimentally and theoretically the (111) SrTiO3/LaAlO3 interface where a critical thickness, tc, of nine epitaxial LaAlO3 ML is required to turn t…
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In polar-oxide interfaces, a certain number of monolayers (ML) is needed for conductivity to appear. This threshold for conductivity is explained by accumulating sufficient electric potential to initiate charge transfer to the interface. Here we study experimentally and theoretically the (111) SrTiO3/LaAlO3 interface where a critical thickness, tc, of nine epitaxial LaAlO3 ML is required to turn the interface from insulating to conducting and even superconducting. We show that tc decreases to 3ML when depositing a cobalt over-layer (cap**) and 6ML for platinum cap**. The latter result contrasts with the (100) interface, where platinum cap** increases tc beyond the bare interface. The observed threshold for conductivity for the bare and the metal-capped interfaces is confirmed by our density functional theory calculations. Interestingly, for (111) SrTiO3/LaAlO3/Metal interfaces, conductivity appears concomitantly with superconductivity in contrast with the (100) SrTiO3/LaAlO3/Metal interfaces where tc is smaller than the critical thickness for superconductivity. We attribute this dissimilarity to the different orbital polarization of e'g for the (111) versus dxy for the (001) interface.
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Submitted 19 July, 2021; v1 submitted 14 February, 2021;
originally announced February 2021.
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Universal behavior of the bosonic metallic ground state in a two-dimensional superconductor
Authors:
Zhuoyu Chen,
Bai Yang Wang,
Adrian G. Swartz,
Hyeok Yoon,
Yasuyuki Hikita,
Srinivas Raghu,
Harold Y. Hwang
Abstract:
Anomalous metallic behavior, marked by a saturating finite resistivity much lower than the Drude estimate, has been observed in a wide range of two-dimensional superconductors. Utilizing the electrostatically gated LaAlO3/SrTiO3 interface as a versatile platform for superconductor-metal quantum phase transitions, we probe variations in the gate, magnetic field, and temperature to construct a phase…
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Anomalous metallic behavior, marked by a saturating finite resistivity much lower than the Drude estimate, has been observed in a wide range of two-dimensional superconductors. Utilizing the electrostatically gated LaAlO3/SrTiO3 interface as a versatile platform for superconductor-metal quantum phase transitions, we probe variations in the gate, magnetic field, and temperature to construct a phase diagram crossing from superconductor, anomalous metal, vortex liquid, to Drude metal states, combining longitudinal and Hall resistivity measurements. We find that the anomalous metal phases induced by gating and magnetic field, although differing in symmetry, are connected in the phase diagram and exhibit similar magnetic field response approaching zero temperature. Namely, within a finite regime of the anomalous metal state, the longitudinal resistivity linearly depends on field while the Hall resistivity diminishes, indicating an emergent particle-hole symmetry. The universal behavior highlights the uniqueness of the quantum bosonic metallic state, distinct from bosonic insulators and vortex liquids.
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Submitted 13 January, 2021; v1 submitted 25 September, 2020;
originally announced September 2020.
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The density and disorder tuned superconductor-metal transition in two dimensions
Authors:
Zhuoyu Chen,
Adrian G. Swartz,
Hyeok Yoon,
Hisashi Inoue,
Tyler Merz,
Di Lu,
Yanwu Xie,
Hongtao Yuan,
Yasuyuki Hikita,
Srinivas Raghu,
Harold Y. Hwang
Abstract:
Quantum ground states which arise at atomically controlled oxide interfaces provide an opportunity to address key questions in condensed matter physics, including the nature of two-dimensional (2D) metallic behaviour often observed adjacent to superconductivity. At the superconducting LaAlO3/SrTiO3 interface, a metallic ground state emerges upon the collapse of superconductivity with field-effect…
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Quantum ground states which arise at atomically controlled oxide interfaces provide an opportunity to address key questions in condensed matter physics, including the nature of two-dimensional (2D) metallic behaviour often observed adjacent to superconductivity. At the superconducting LaAlO3/SrTiO3 interface, a metallic ground state emerges upon the collapse of superconductivity with field-effect gating. Strikingly, such metallicity is accompanied with a pseudogap. Here, we utilize independent control of carrier density and disorder of the interfacial superconductor using dual electrostatic gates, which enables the comprehensive examination of the electronic phase diagram approaching zero temperature. We find that the pseudogap corresponds to precursor pairing, and the onset of long-range phase coherence forms a 2D superconducting dome as a function of the dual gate voltages. The gate-tuned superconductor-metal transitions are driven by macroscopic phase fluctuations of Josephson coupled superconducting puddles.
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Submitted 22 July, 2018;
originally announced July 2018.
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Superconducting tunneling spectroscopy of spin-orbit coupling and orbital depairing in Nb:SrTiO$_3$
Authors:
Adrian G. Swartz,
Alfred K. C. Cheung,
Hyeok Yoon,
Zhuoyu Chen,
Yasuyuki Hikita,
Srinivas Raghu,
Harold Y. Hwang
Abstract:
We have examined the intrinsic spin-orbit coupling (SOC) and orbital depairing in thin films of Nb-doped SrTiO$_3$ by superconducting tunneling spectroscopy. The orbital depairing is geometrically suppressed in the two-dimensional limit, enabling a quantitative evaluation of the Fermi level spin-orbit scattering using Maki's theory. The response of the superconducting gap under in-plane magnetic f…
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We have examined the intrinsic spin-orbit coupling (SOC) and orbital depairing in thin films of Nb-doped SrTiO$_3$ by superconducting tunneling spectroscopy. The orbital depairing is geometrically suppressed in the two-dimensional limit, enabling a quantitative evaluation of the Fermi level spin-orbit scattering using Maki's theory. The response of the superconducting gap under in-plane magnetic fields demonstrates short spin-orbit scattering times $τ_{so} \leq 1.1$ ps. Analysis of the orbital depairing indicates that the heavy electron band contributes significantly to pairing. These results suggest that the intrinsic spin-orbit scattering time in SrTiO$_3$ is comparable to those associated with Rashba effects in SrTiO$_3$ interfacial conducting layers and can be considered significant in all forms of superconductivity in SrTiO$_3$.
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Submitted 30 April, 2018;
originally announced May 2018.
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Polaronic behavior in a weak coupling superconductor
Authors:
Adrian G. Swartz,
Hisashi Inoue,
Tyler A. Merz,
Yasuyuki Hikita,
Srinivas Raghu,
Thomas P. Devereaux,
Steven Johnston,
Harold Y. Hwang
Abstract:
The nature of superconductivity in the dilute semiconductor SrTiO$_3$ has remained an open question for more than 50 years. The extremely low carrier densities ($10^{18}$ - $10^{20}$ cm$^{-3}$) at which superconductivity occurs suggests an unconventional origin of superconductivity outside of the adiabatic limit on which the Bardeen-Cooper-Schrieffer (BCS) and Migdal-Eliashberg (ME) theories are b…
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The nature of superconductivity in the dilute semiconductor SrTiO$_3$ has remained an open question for more than 50 years. The extremely low carrier densities ($10^{18}$ - $10^{20}$ cm$^{-3}$) at which superconductivity occurs suggests an unconventional origin of superconductivity outside of the adiabatic limit on which the Bardeen-Cooper-Schrieffer (BCS) and Migdal-Eliashberg (ME) theories are based. We take advantage of a newly developed method for engineering band alignments at oxide interfaces and access the electronic structure of Nb-doped SrTiO$_3$ using high resolution tunneling spectroscopy. We observe strong coupling to the highest energy longitudinal optic (LO) phonon branch and estimate the do** evolution of the dimensionless electron-phonon interaction strength ($λ$). Upon cooling below the superconducting transition temperature ($T_{\mathrm{c}}$), we observe a single superconducting gap corresponding to the weak-coupling limit of BCS theory, indicating an order of magnitude smaller coupling ($λ_{\textrm{BCS}} \approx 0.1$). These results suggest that despite the strong normal state interaction with electrons, the highest LO phonon does not provide a dominant contribution to pairing. They further demonstrate that SrTiO$_3$ is an ideal system to probe superconductivity over a wide range of carrier density, adiabatic parameter, and electron-phonon coupling strength.
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Submitted 27 December, 2017; v1 submitted 19 August, 2016;
originally announced August 2016.
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Spin accumulation detection of FMR driven spin pum** in silicon-based metal-oxide-semiconductor heterostructures
Authors:
Yong Pu,
P. M. Odenthal,
R. Adur,
J. Beardsley,
A. G. Swartz,
D. V. Pelekhov,
R. K. Kawakami,
J. Pelz,
P. C. Hammel,
E. Johnston-Halperin
Abstract:
The use of the spin Hall effect and its inverse to electrically detect and manipulate dynamic spin currents generated via ferromagnetic resonance (FMR) driven spin pum** has enabled the investigation of these dynamically injected currents across a wide variety of ferromagnetic materials. However, while this approach has proven to be an invaluable diagnostic for exploring the spin pum** process…
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The use of the spin Hall effect and its inverse to electrically detect and manipulate dynamic spin currents generated via ferromagnetic resonance (FMR) driven spin pum** has enabled the investigation of these dynamically injected currents across a wide variety of ferromagnetic materials. However, while this approach has proven to be an invaluable diagnostic for exploring the spin pum** process it requires strong spin-orbit coupling, thus substantially limiting the materials basis available for the detector/channel material (primarily Pt, W and Ta). Here, we report FMR driven spin pum** into a weak spin-orbit channel through the measurement of a spin accumulation voltage in a Si-based metal-oxide-semiconductor (MOS) heterostructure. This alternate experimental approach enables the investigation of dynamic spin pum** in a broad class of materials with weak spin-orbit coupling and long spin lifetime while providing additional information regarding the phase evolution of the injected spin ensemble via Hanle-based measurements of the effective spin lifetime.
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Submitted 4 November, 2013;
originally announced November 2013.
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Integrating MBE materials with graphene to induce novel spin-based phenomena
Authors:
Adrian G. Swartz,
Kathleen M. McCreary,
Wei Han,
Jared J. I. Wong,
Patrick M. Odenthal,
Hua Wen,
Jen-Ru Chen,
Yufeng Hao,
Rodney S. Ruoff,
Jaroslav Fabian,
Roland K. Kawakami
Abstract:
Magnetism in graphene is an emerging field that has received much theoretical attention. In particular, there have been exciting predictions for induced magnetism through proximity to a ferromagnetic insulator as well as through localized dopants and defects. Here, we discuss our experimental work using molecular beam epitaxy (MBE) to modify the surface of graphene and induce novel spin-dependent…
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Magnetism in graphene is an emerging field that has received much theoretical attention. In particular, there have been exciting predictions for induced magnetism through proximity to a ferromagnetic insulator as well as through localized dopants and defects. Here, we discuss our experimental work using molecular beam epitaxy (MBE) to modify the surface of graphene and induce novel spin-dependent phenomena. First, we investigate the epitaxial growth the ferromagnetic insulator EuO on graphene and discuss possible scenarios for realizing exchange splitting and exchange fields by ferromagnetic insulators. Second, we investigate the properties of magnetic moments in graphene originating from localized p_z-orbital defects (i.e. adsorbed hydrogen atoms). The behavior of these magnetic moments is studied using non-local spin transport to directly probe the spin-degree of freedom of the defect-induced states. We also report the presence of enhanced electron g-factors caused by the exchange fields present in the system. Importantly, the exchange field is found to be highly gate dependent, with decreasing g-factors with increasing carrier densities.
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Submitted 22 March, 2013;
originally announced March 2013.
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Integration of the Ferromagnetic Insulator EuO onto Graphene
Authors:
Adrian G. Swartz,
Patrick M. Odenthal,
Yufeng Hao,
Rodney S. Ruoff,
Roland K. Kawakami
Abstract:
We have demonstrated the deposition of EuO films on graphene by reactive molecular beam epitaxy in a special adsorption-controlled and oxygen-limited regime, which is a critical advance toward the realization of the exchange proximity interaction (EPI). It has been predicted that when the ferromagnetic insulator (FMI) EuO is brought into contact with graphene, an overlap of electronic wavefunction…
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We have demonstrated the deposition of EuO films on graphene by reactive molecular beam epitaxy in a special adsorption-controlled and oxygen-limited regime, which is a critical advance toward the realization of the exchange proximity interaction (EPI). It has been predicted that when the ferromagnetic insulator (FMI) EuO is brought into contact with graphene, an overlap of electronic wavefunctions at the FMI/graphene interface can induce a large spin splitting inside the graphene. Experimental realization of this effect could lead to new routes for spin manipulation, which is a necessary requirement for a functional spin transistor. Furthermore, EPI could lead to novel spintronic behavior such as controllable magnetoresistance, gate tunable exchange bias, and quantized anomalous Hall effect. However, experimentally, EuO has not yet been integrated onto graphene. Here we report the successful growth of high quality crystalline EuO on highly-oriented pyrolytic graphite (HOPG) and single-layer graphene. The epitaxial EuO layers have (001) orientation and do not induce an observable D peak (defect) in the Raman spectra. Magneto-optic measurements indicate ferromagnetism with Curie temperature of 69 K, which is the value for bulk EuO. Transport measurements on exfoliated graphene before and after EuO deposition indicate only a slight decrease in mobility.
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Submitted 22 February, 2013;
originally announced February 2013.
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Effect of in-situ deposition of Mg adatoms on spin relaxation in graphene
Authors:
Adrian G. Swartz,
Jen-Ru Chen,
Kathleen M. McCreary,
Patrick M. Odenthal,
Wei Han,
Roland K. Kawakami
Abstract:
We have systematically introduced charged impurity scatterers in the form of Mg adsorbates to exfoliated single layer graphene and observe little variation of the spin relaxation times despite pronounced changes in the charge transport behavior. All measurements are performed on non-local graphene tunneling spin valves exposed in-situ to Mg adatoms, thus systematically introducing atomic-scale cha…
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We have systematically introduced charged impurity scatterers in the form of Mg adsorbates to exfoliated single layer graphene and observe little variation of the spin relaxation times despite pronounced changes in the charge transport behavior. All measurements are performed on non-local graphene tunneling spin valves exposed in-situ to Mg adatoms, thus systematically introducing atomic-scale charged impurity scattering. While charge transport properties exhibit decreased mobility and decreased momentum scattering times, the observed spin lifetimes are not significantly affected indicating that charged impurity scattering is inconsequential in the present regime of spin relaxation times.
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Submitted 22 February, 2013;
originally announced February 2013.
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Spin Relaxation in Single Layer Graphene with Tunable Mobility
Authors:
Wei Han,
Jen-Ru Chen,
Deqi Wang,
Kathleen M. McCreary,
Hua Wen,
Adrian G. Swartz,
**g Shi,
Roland K. Kawakami
Abstract:
Graphene is an attractive material for spintronics due to theoretical predictions of long spin lifetimes arising from low spin-orbit and hyperfine couplings. In experiments, however, spin lifetimes in single layer graphene (SLG) measured via Hanle effects are much shorter than expected theoretically. Thus, the origin of spin relaxation in SLG is a major issue for graphene spintronics. Despite exte…
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Graphene is an attractive material for spintronics due to theoretical predictions of long spin lifetimes arising from low spin-orbit and hyperfine couplings. In experiments, however, spin lifetimes in single layer graphene (SLG) measured via Hanle effects are much shorter than expected theoretically. Thus, the origin of spin relaxation in SLG is a major issue for graphene spintronics. Despite extensive theoretical and experimental work addressing this question, there is still little clarity on the microscopic origin of spin relaxation. By using organic ligand-bound nanoparticles as charge reservoirs to tune mobility between 2700 and 12000 cm2/Vs, we successfully isolate the effect of charged impurity scattering on spin relaxation in SLG. Our results demonstrate that while charged impurities can greatly affect mobility, the spin lifetimes are not affected by charged impurity scattering.
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Submitted 29 June, 2012;
originally announced June 2012.
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TiO2 as an electrostatic template for epitaxial growth of EuO on MgO(001) by reactive molecular beam epitaxy
Authors:
A. G. Swartz,
Jared J. I. Wong,
I. V. Pinchuk,
R. K. Kawakami
Abstract:
We investigate the initial growth modes and the role of interfacial electrostatic interactions of EuO epitaxy on MgO(001) by reactive molecular beam epitaxy. A TiO2 interfacial layer is employed to produce high quality epitaxial growth of EuO on MgO(001) with a 45° in plane rotation. For comparison, direct deposition of EuO on MgO, without the TiO2 layer shows a much slower time evolution in produ…
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We investigate the initial growth modes and the role of interfacial electrostatic interactions of EuO epitaxy on MgO(001) by reactive molecular beam epitaxy. A TiO2 interfacial layer is employed to produce high quality epitaxial growth of EuO on MgO(001) with a 45° in plane rotation. For comparison, direct deposition of EuO on MgO, without the TiO2 layer shows a much slower time evolution in producing a single crystal film. Conceptual arguments of electrostatic repulsion of like-ions are introduced to explain the increased EuO quality at the interface with the TiO2 layer. It is shown that ultrathin EuO films in the monolayer regime can be produced on the TiO2 surface by substrate-supplied oxidation and that such films have bulk-like magnetic properties.
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Submitted 13 June, 2012;
originally announced June 2012.
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Magnetic Moment Formation in Graphene Detected by Scattering of Pure Spin Currents
Authors:
Kathleen M. McCreary,
Adrian G. Swartz,
Wei Han,
Jaroslav Fabian,
Roland K. Kawakami
Abstract:
Hydrogen adatoms are shown to generate magnetic moments inside single layer graphene. Spin transport measurements on graphene spin valves exhibit a dip in the non-local spin signal as a function of applied magnetic field, which is due to scattering (relaxation) of pure spin currents by exchange coupling to the magnetic moments. Furthermore, Hanle spin precession measurements indicate the presence…
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Hydrogen adatoms are shown to generate magnetic moments inside single layer graphene. Spin transport measurements on graphene spin valves exhibit a dip in the non-local spin signal as a function of applied magnetic field, which is due to scattering (relaxation) of pure spin currents by exchange coupling to the magnetic moments. Furthermore, Hanle spin precession measurements indicate the presence of an exchange field generated by the magnetic moments. The entire experiment including spin transport is performed in an ultrahigh vacuum chamber, and the characteristic signatures of magnetic moment formation appear only after hydrogen adatoms are introduced. Lattice vacancies also demonstrate similar behavior indicating that the magnetic moment formation originates from pz-orbital defects.
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Submitted 10 October, 2012; v1 submitted 12 June, 2012;
originally announced June 2012.
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Electric Field Control of the Verwey Transition and Induced Magnetoelectric Effect in Magnetite
Authors:
Jared J. I. Wong,
Adrian G. Swartz,
Ren**g Zheng,
Wei Han,
Roland K. Kawakami
Abstract:
We incorporate single crystal Fe$_3$O$_4$ thin films into a gated device structure and demonstrate the ability to control the Verwey transition with static electric fields. The Verwey transition temperature ($T_V$) increases for both polarities of the electric field, indicating the effect is not driven by changes in carrier concentration. Energetics of induced electric polarization and/or strain w…
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We incorporate single crystal Fe$_3$O$_4$ thin films into a gated device structure and demonstrate the ability to control the Verwey transition with static electric fields. The Verwey transition temperature ($T_V$) increases for both polarities of the electric field, indicating the effect is not driven by changes in carrier concentration. Energetics of induced electric polarization and/or strain within the Fe$_3$O$_4$ film provide a possible explanation for this behavior. Electric field control of the Verwey transition leads directly to a large magnetoelectric effect with coefficient of 585 pT m/V.
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Submitted 29 February, 2012;
originally announced February 2012.
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Oscillatory Spin Polarization and Magneto-Optic Kerr Effect in Fe3O4 Thin Films on GaAs(001)
Authors:
Yan Li,
Wei Han,
A. G. Swartz,
K. Pi,
J. J. I. Wong,
S. Mack,
D. D. Awschalom,
R. K. Kawakami
Abstract:
The spin dependent properties of epitaxial Fe3O4 thin films on GaAs(001) are studied by the ferromagnetic proximity polarization (FPP) effect and magneto-optic Kerr effect (MOKE). Both FPP and MOKE show oscillations with respect to Fe3O4 film thickness, and the oscillations are large enough to induce repeated sign reversals. We attribute the oscillatory behavior to spin-polarized quantum well stat…
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The spin dependent properties of epitaxial Fe3O4 thin films on GaAs(001) are studied by the ferromagnetic proximity polarization (FPP) effect and magneto-optic Kerr effect (MOKE). Both FPP and MOKE show oscillations with respect to Fe3O4 film thickness, and the oscillations are large enough to induce repeated sign reversals. We attribute the oscillatory behavior to spin-polarized quantum well states forming in the Fe3O4 film. Quantum confinement of the t2g states near the Fermi level provides an explanation for the similar thickness dependences of the FPP and MOKE oscillations.
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Submitted 20 September, 2010;
originally announced September 2010.
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Tunneling Spin Injection into Single Layer Graphene (Supplementary Information)
Authors:
Wei Han,
K. Pi,
K. M. McCreary,
Yan Li,
Jared J. I. Wong,
A. G. Swartz,
R. K. Kawakami
Abstract:
We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO2 seeded MgO barriers. A non-local magnetoresistance (ΔRNL) of 130 Ω is observed at room temperature, which is the largest value observed in any material. Investigating ΔRNL vs. SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-dif…
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We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO2 seeded MgO barriers. A non-local magnetoresistance (ΔRNL) of 130 Ω is observed at room temperature, which is the largest value observed in any material. Investigating ΔRNL vs. SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-diffusion theory of spin transport. Furthermore, tunnel barriers reduce the contact-induced spin relaxation and are therefore important for future investigations of spin relaxation in graphene.
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Submitted 19 August, 2010;
originally announced August 2010.
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Epitaxial EuO Thin Films on GaAs
Authors:
A. G. Swartz,
J. Ciraldo,
J. J. I. Wong,
Yan Li,
Wei Han,
Tao Lin,
S. Mack,
J. Shi,
D. D. Awschalom,
R. K. Kawakami
Abstract:
We demonstrate the epitaxial growth of EuO on GaAs by reactive molecular beam epitaxy. Thin films are grown in an adsorption-controlled regime with the aid of an MgO diffusion barrier. Despite the large lattice mismatch, it is shown that EuO grows well on MgO(001) with excellent magnetic properties. Epitaxy on GaAs is cube-on-cube and longitudinal magneto-optic Kerr effect measurements demonstrate…
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We demonstrate the epitaxial growth of EuO on GaAs by reactive molecular beam epitaxy. Thin films are grown in an adsorption-controlled regime with the aid of an MgO diffusion barrier. Despite the large lattice mismatch, it is shown that EuO grows well on MgO(001) with excellent magnetic properties. Epitaxy on GaAs is cube-on-cube and longitudinal magneto-optic Kerr effect measurements demonstrate a large Kerr rotation of 0.57°, a significant remanent magnetization, and a Curie temperature of 69 K.
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Submitted 31 August, 2010; v1 submitted 4 August, 2010;
originally announced August 2010.
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Tunneling Spin Injection into Single Layer Graphene
Authors:
Wei Han,
K. Pi,
K. M. McCreary,
Yan Li,
Jared J. I. Wong,
A. G. Swartz,
R. K. Kawakami
Abstract:
We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO2 seeded MgO barriers. A non-local magnetoresistance (ΔRNL) of 130 Ω is observed at room temperature, which is the largest value observed in any material. Investigating ΔRNL vs. SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-dif…
▽ More
We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO2 seeded MgO barriers. A non-local magnetoresistance (ΔRNL) of 130 Ω is observed at room temperature, which is the largest value observed in any material. Investigating ΔRNL vs. SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-diffusion theory of spin transport. Furthermore, tunnel barriers reduce the contact-induced spin relaxation and are therefore important for future investigations of spin relaxation in graphene.
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Submitted 18 August, 2010; v1 submitted 12 March, 2010;
originally announced March 2010.
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Manipulation of Spin Transport in Graphene by Surface Chemical Do**
Authors:
K. Pi,
Wei Han,
K. M. McCreary,
A. G. Swartz,
Yan Li,
R. K. Kawakami
Abstract:
The effects of surface chemical do** on spin transport in graphene are investigated by performing non-local measurements in ultrahigh vacuum while depositing gold adsorbates. We demonstrate manipulation of the gate-dependent non-local spin signal as a function of gold coverage. We discover that charged impurity scattering is not the dominant mechanism for spin relaxation in graphene, despite i…
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The effects of surface chemical do** on spin transport in graphene are investigated by performing non-local measurements in ultrahigh vacuum while depositing gold adsorbates. We demonstrate manipulation of the gate-dependent non-local spin signal as a function of gold coverage. We discover that charged impurity scattering is not the dominant mechanism for spin relaxation in graphene, despite its importance for momentum scattering. Finally, unexpected enhancements of the spin lifetime illustrate the complex nature of spin relaxation in graphene.
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Submitted 2 March, 2010;
originally announced March 2010.
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Tailoring Interlayer Exchange Coupling of Ferromagnetic Films Across MgO with Fe Nanoclusters
Authors:
Jared J. I. Wong,
Luciana Ramirez,
A. G. Swartz,
A. Hoff,
Wei Han,
Yan Li,
R. K. Kawakami
Abstract:
We investigate the interlayer exchange coupling in Fe/MgO/Fe and Fe/MgO/Co systems with magnetic Fe nanoclusters embedded in the MgO spacer. Samples are grown by molecular beam epitaxy (MBE) and utilize wedged MgO films to independently vary the film thickness and the position of the Fe nanoclusters. Depending on the position of the Fe nanoclusters, the bilinear coupling (J1) exhibits strong var…
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We investigate the interlayer exchange coupling in Fe/MgO/Fe and Fe/MgO/Co systems with magnetic Fe nanoclusters embedded in the MgO spacer. Samples are grown by molecular beam epitaxy (MBE) and utilize wedged MgO films to independently vary the film thickness and the position of the Fe nanoclusters. Depending on the position of the Fe nanoclusters, the bilinear coupling (J1) exhibits strong variations in magnitude and can even switch between antiferromagnetic and ferromagnetic. This effect is explained by the magnetic coupling between the ferromagnetic films and the magnetic nanoclusters. Interestingly, the coupling of Fe nanoclusters to a Co film is 160% stronger than their coupling to a Fe film (at MgO spacing of 0.56 nm). This is much greater than the coupling difference of 20% observed in the analogous thin film systems (i.e. Fe/MgO/Co vs. Fe/MgO/Fe), identifying an interesting nano-scaling effect related to the coupling between films and nanoclusters.
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Submitted 2 February, 2010;
originally announced February 2010.
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Anisotropic Dependence of Superconductivity on Uniaxial Pressure in CeIrIn5
Authors:
O. M. Dix,
A. G. Swartz,
R. J. Zieve,
J. Cooley,
T. R. Sayles,
M. B. Maple
Abstract:
We measure the effect of uniaxial pressure on the superconducting transition temperature Tc in CeIrIn5. We find a linear change in Tc with both a-axis and c-axis pressure, with slopes of 56 mK/kbar and -66 mK/kbar, respectively. By comparing results from do** studies and different types of pressure measurements, we separate the influences of hybridization and dimensionality on Tc. We find the…
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We measure the effect of uniaxial pressure on the superconducting transition temperature Tc in CeIrIn5. We find a linear change in Tc with both a-axis and c-axis pressure, with slopes of 56 mK/kbar and -66 mK/kbar, respectively. By comparing results from do** studies and different types of pressure measurements, we separate the influences of hybridization and dimensionality on Tc. We find the true geometric influence, for constant hybridization, is dTc/d(c/a)=44 K.
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Submitted 29 August, 2009;
originally announced August 2009.
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Segregation and Stability of Binary Granular Mixtures
Authors:
A. G. Swartz,
J. B. Kalmbach,
J. Olson,
R. J. Zieve
Abstract:
We measure stability of two-dimensional granular mixtures in a rotating drum and relate grain configurations to stability. For our system, the smaller but smoother grains cluster near the center of the drum, while the larger, rougher grains remain near the outer edge. One consequence of the size segregation is that the smaller grains heavily influence the stability of the heap. We find that the…
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We measure stability of two-dimensional granular mixtures in a rotating drum and relate grain configurations to stability. For our system, the smaller but smoother grains cluster near the center of the drum, while the larger, rougher grains remain near the outer edge. One consequence of the size segregation is that the smaller grains heavily influence the stability of the heap. We find that the maximum angle of stability is a non-linear function of composition, changing particularly rapidly when small grains are first added to a homogeneous pile of large grains. We conclude that the grain configuration within the central portion of the heap plays a prominent role in stability.
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Submitted 6 June, 2007;
originally announced June 2007.
