Experimental set-up for thermal measurements at the nanoscale using an SThM probe with niobium nitride thermometer
Authors:
R. Swami,
G. Julie,
S. Le-Denmat,
G. Pernot,
D. Singhal,
J. Paterson,
J. Maire,
J. F. Motte,
N. Paillet,
H. Guillou,
S. Gomes,
O. Bourgeois
Abstract:
Scanning Thermal Microscopy (SThM) has become an important measurement tool for characterizing the thermal properties of materials at the nanometer scale. This technique requires a SThM probe that combines an Atomic Force Microscopy (AFM) probe and a very sensitive resistive thermometry; the thermometer being located at the apex of the probe tip allows the map** of temperature or thermal propert…
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Scanning Thermal Microscopy (SThM) has become an important measurement tool for characterizing the thermal properties of materials at the nanometer scale. This technique requires a SThM probe that combines an Atomic Force Microscopy (AFM) probe and a very sensitive resistive thermometry; the thermometer being located at the apex of the probe tip allows the map** of temperature or thermal properties of nanostructured materials with very high spatial resolution. The high interest of the SThM technique in the field of thermal nanoscience currently suffers from a low temperature sensitivity despite its high spatial resolution. To address this challenge, we developed a high vacuum-based AFM system hosting a highly sensitive niobium nitride (NbN) SThM probe to demonstrate its unique performance. As a proof of concept, we utilized this custom-built system to carry out thermal measurements using the 3$ω$ method. By measuring the $V_{3ω}$ voltage on the NbN resistive thermometer in vacuum conditions we were able to determine the SThM probe's thermal conductance and thermal time constant. The performance of the probe is demonstrated by doing thermal measurements in-contact with a sapphire sample.
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Submitted 30 April, 2024; v1 submitted 8 March, 2024;
originally announced March 2024.
Niobium nitride thin films for very low temperature resistive thermometry
Authors:
Tuyen Nguyen,
Adib Tavakoli,
Sebastien Triqueneaux,
Rahul Swami,
Aki Ruhtinas,
Jeremy Gradel,
Pablo Garcia-Campos,
Klaus Hasselbach,
Aviad Frydman,
Benjamin Piot,
Mathieu Gibert,
Eddy Collin,
Olivier Bourgeois
Abstract:
We investigate thin film resistive thermometry based on metal-to-insulator-transition (niobium nitride) materials down to very low temperature. The variation of the NbN thermometer resistance have been calibrated versus temperature and magnetic field. High sensitivity in tempertaure variation detection is demonstrated through efficient temperature coefficient of resistance. The nitrogen content of…
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We investigate thin film resistive thermometry based on metal-to-insulator-transition (niobium nitride) materials down to very low temperature. The variation of the NbN thermometer resistance have been calibrated versus temperature and magnetic field. High sensitivity in tempertaure variation detection is demonstrated through efficient temperature coefficient of resistance. The nitrogen content of the niobium nitride thin films can be tuned to adjust the optimal working temperature range. In the present experiment, we show the versatility of the NbN thin film technology through applications in very different low temperature use-cases. We demonstrate that thin film resistive thermometry can be extended to temperatures below 30 mK with low electrical impedance.
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Submitted 19 July, 2019;
originally announced July 2019.
