Showing 1–34 of 34 results for author: Sushko, V

Ultrathin Magnesium-based Coating as an Efficient Oxygen Barrier for Superconducting Circuit Materials

Authors: Chenyu Zhou, Junsik Mun, Juntao Yao, Aswin kumar Anbalagan, Mohammad D. Hossain, Russell A. McLellan, Ruoshui Li, Kim Kisslinger, Gengnan Li, Xiao Tong, Ashley R. Head, Conan Weiland, Steven L. Hulbert, Andrew L. Walter, Qiang Li, Yimei Zhu, Peter V. Sushko, Mingzhao Liu

Abstract: Scaling up superconducting quantum circuits based on transmon qubits necessitates substantial enhancements in qubit coherence time. Among the materials considered for transmon qubits, tantalum (Ta) has emerged as a promising candidate, surpassing conventional counterparts in terms of coherence time. However, the presence of an amorphous surface Ta oxide layer introduces dielectric loss, ultimately… ▽ More Scaling up superconducting quantum circuits based on transmon qubits necessitates substantial enhancements in qubit coherence time. Among the materials considered for transmon qubits, tantalum (Ta) has emerged as a promising candidate, surpassing conventional counterparts in terms of coherence time. However, the presence of an amorphous surface Ta oxide layer introduces dielectric loss, ultimately placing a limit on the coherence time. In this study, we present a novel approach for suppressing the formation of tantalum oxide using an ultrathin magnesium (Mg) cap** layer deposited on top of tantalum. Synchrotron-based X-ray photoelectron spectroscopy (XPS) studies demonstrate that oxide is confined to an extremely thin region directly beneath the Mg/Ta interface. Additionally, we demonstrate that the superconducting properties of thin Ta films are improved following the Mg cap**, exhibiting sharper and higher-temperature transitions to superconductive and magnetically ordered states. Based on the experimental data and computational modeling, we establish an atomic-scale mechanistic understanding of the role of the cap** layer in protecting Ta from oxidation. This work provides valuable insights into the formation mechanism and functionality of surface tantalum oxide, as well as a new materials design principle with the potential to reduce dielectric loss in superconducting quantum materials. Ultimately, our findings pave the way for the realization of large-scale, high-performance quantum computing systems. △ Less

Submitted 25 September, 2023; v1 submitted 21 September, 2023; originally announced September 2023.

Smoothness Similarity Regularization for Few-Shot GAN Adaptation

Authors: Vadim Sushko, Ruyu Wang, Juergen Gall

Abstract: The task of few-shot GAN adaptation aims to adapt a pre-trained GAN model to a small dataset with very few training images. While existing methods perform well when the dataset for pre-training is structurally similar to the target dataset, the approaches suffer from training instabilities or memorization issues when the objects in the two domains have a very different structure. To mitigate this… ▽ More The task of few-shot GAN adaptation aims to adapt a pre-trained GAN model to a small dataset with very few training images. While existing methods perform well when the dataset for pre-training is structurally similar to the target dataset, the approaches suffer from training instabilities or memorization issues when the objects in the two domains have a very different structure. To mitigate this limitation, we propose a new smoothness similarity regularization that transfers the inherently learned smoothness of the pre-trained GAN to the few-shot target domain even if the two domains are very different. We evaluate our approach by adapting an unconditional and a class-conditional GAN to diverse few-shot target domains. Our proposed method significantly outperforms prior few-shot GAN adaptation methods in the challenging case of structurally dissimilar source-target domains, while performing on par with the state of the art for similar source-target domains. △ Less

Submitted 18 August, 2023; originally announced August 2023.

Comments: International Conference on Computer Vision (ICCV) 2023

Silicon-lattice-matched boron-doped gallium phosphide: A scalable acousto-optic platform

Authors: Nicholas S. Yama, I-Tung Chen, Srivatsa Chakravarthi, Bingzhao Li, Christian Pederson, Bethany E. Matthews, Steven R. Spurgeon, Daniel E. Perea, Mark G. Wirth, Peter V. Sushko, Mo Li, Kai-Mei C. Fu

Abstract: The compact size, scalability, and strongly confined fields in integrated photonic devices enable new functionalities in photonic networking and information processing, both classical and quantum. Gallium phosphide (GaP) is a promising material for active integrated photonics due to its high refractive index, wide band gap, strong nonlinear properties, and large acousto-optic figure of merit. In t… ▽ More The compact size, scalability, and strongly confined fields in integrated photonic devices enable new functionalities in photonic networking and information processing, both classical and quantum. Gallium phosphide (GaP) is a promising material for active integrated photonics due to its high refractive index, wide band gap, strong nonlinear properties, and large acousto-optic figure of merit. In this work we demonstrate that silicon-lattice-matched boron-doped GaP (BGaP), grown at the 12-inch wafer scale, provides similar functionalities as GaP. BGaP optical resonators exhibit intrinsic quality factors exceeding 25,000 and 200,000 at visible and telecom wavelengths respectively. We further demonstrate the electromechanical generation of low-loss acoustic waves and an integrated acousto-optic (AO) modulator. High-resolution spatial and compositional map**, combined with ab initio calculations indicate two candidates for the excess optical loss in the visible band: the silicon-GaP interface and boron dimers. These results demonstrate the promise of the BGaP material platform for the development of scalable AO technologies at telecom and provide potential pathways toward higher performance at shorter wavelengths. △ Less

Submitted 19 May, 2023; originally announced May 2023.

Surface termination control of charge transfer and band alignment across a semiconductor-crystalline oxide heterojunction

Authors: M. Chrysler, J. Gabel, T. -L. Lee, Z. Zhu, T. C. Kaspar, P. V. Sushko, S. A. Chambers, J. H. Ngai

Abstract: Charge redistribution across heterojunctions has long been utilized to induce functional response in materials systems. Here we examine how the composition of the terminating surface affects charge transfer across a heterojunction consisting of Si and the crystalline complex oxide SrTiO3. Itinerant electrons in Si migrate across the interface toward the surface of SrTiO3 due to surface depletion.… ▽ More Charge redistribution across heterojunctions has long been utilized to induce functional response in materials systems. Here we examine how the composition of the terminating surface affects charge transfer across a heterojunction consisting of Si and the crystalline complex oxide SrTiO3. Itinerant electrons in Si migrate across the interface toward the surface of SrTiO3 due to surface depletion. The electron transfer in turn creates an electric field across the interface that modifies the interfacial dipole associated with bonding between SrTiO3 and Si, leading to a change in the band alignment from type-II to type-III. By cap** the SrTiO3 surface with ultra-thin layers of BaO, SrO or TiO2, charge transfer across the interface can be weakened or inhibited. Ab initio modeling implicates the adsorption of oxygen as driving surface depletion in SrTiO3. The electronic coupling between the surface and buried interface expands the functionality of semiconductor-crystalline oxide heterojunctions. △ Less

Submitted 24 March, 2023; originally announced March 2023.

Comments: 17 pages, 5 figures

Discovering Class-Specific GAN Controls for Semantic Image Synthesis

Authors: Edgar Schönfeld, Julio Borges, Vadim Sushko, Bernt Schiele, Anna Khoreva

Abstract: Prior work has extensively studied the latent space structure of GANs for unconditional image synthesis, enabling global editing of generated images by the unsupervised discovery of interpretable latent directions. However, the discovery of latent directions for conditional GANs for semantic image synthesis (SIS) has remained unexplored. In this work, we specifically focus on addressing this gap.… ▽ More Prior work has extensively studied the latent space structure of GANs for unconditional image synthesis, enabling global editing of generated images by the unsupervised discovery of interpretable latent directions. However, the discovery of latent directions for conditional GANs for semantic image synthesis (SIS) has remained unexplored. In this work, we specifically focus on addressing this gap. We propose a novel optimization method for finding spatially disentangled class-specific directions in the latent space of pretrained SIS models. We show that the latent directions found by our method can effectively control the local appearance of semantic classes, e.g., changing their internal structure, texture or color independently from each other. Visual inspection and quantitative evaluation of the discovered GAN controls on various datasets demonstrate that our method discovers a diverse set of unique and semantically meaningful latent directions for class-specific edits. △ Less

Submitted 2 December, 2022; originally announced December 2022.

One-Shot Synthesis of Images and Segmentation Masks

Authors: Vadim Sushko, Dan Zhang, Juergen Gall, Anna Khoreva

Abstract: Joint synthesis of images and segmentation masks with generative adversarial networks (GANs) is promising to reduce the effort needed for collecting image data with pixel-wise annotations. However, to learn high-fidelity image-mask synthesis, existing GAN approaches first need a pre-training phase requiring large amounts of image data, which limits their utilization in restricted image domains. In… ▽ More Joint synthesis of images and segmentation masks with generative adversarial networks (GANs) is promising to reduce the effort needed for collecting image data with pixel-wise annotations. However, to learn high-fidelity image-mask synthesis, existing GAN approaches first need a pre-training phase requiring large amounts of image data, which limits their utilization in restricted image domains. In this work, we take a step to reduce this limitation, introducing the task of one-shot image-mask synthesis. We aim to generate diverse images and their segmentation masks given only a single labelled example, and assuming, contrary to previous models, no access to any pre-training data. To this end, inspired by the recent architectural developments of single-image GANs, we introduce our OSMIS model which enables the synthesis of segmentation masks that are precisely aligned to the generated images in the one-shot regime. Besides achieving the high fidelity of generated masks, OSMIS outperforms state-of-the-art single-image GAN models in image synthesis quality and diversity. In addition, despite not using any additional data, OSMIS demonstrates an impressive ability to serve as a source of useful data augmentation for one-shot segmentation applications, providing performance gains that are complementary to standard data augmentation techniques. Code is available at https://github.com/ boschresearch/one-shot-synthesis △ Less

Submitted 15 September, 2022; originally announced September 2022.

Comments: Accepted as a conference paper at IEEE Winter Conference on Applications of Computer Vision (WACV) 2023

Decentralized Personalized Federated Learning for Min-Max Problems

Authors: Ekaterina Borodich, Aleksandr Beznosikov, Abdurakhmon Sadiev, Vadim Sushko, Nikolay Savelyev, Martin Takáč, Alexander Gasnikov

Abstract: Personalized Federated Learning (PFL) has witnessed remarkable advancements, enabling the development of innovative machine learning applications that preserve the privacy of training data. However, existing theoretical research in this field has primarily focused on distributed optimization for minimization problems. This paper is the first to study PFL for saddle point problems encompassing a br… ▽ More Personalized Federated Learning (PFL) has witnessed remarkable advancements, enabling the development of innovative machine learning applications that preserve the privacy of training data. However, existing theoretical research in this field has primarily focused on distributed optimization for minimization problems. This paper is the first to study PFL for saddle point problems encompassing a broader range of optimization problems, that require more than just solving minimization problems. In this work, we consider a recently proposed PFL setting with the mixing objective function, an approach combining the learning of a global model together with locally distributed learners. Unlike most previous work, which considered only the centralized setting, we work in a more general and decentralized setup that allows us to design and analyze more practical and federated ways to connect devices to the network. We proposed new algorithms to address this problem and provide a theoretical analysis of the smooth (strongly) convex-(strongly) concave saddle point problems in stochastic and deterministic cases. Numerical experiments for bilinear problems and neural networks with adversarial noise demonstrate the effectiveness of the proposed methods. △ Less

Submitted 17 April, 2024; v1 submitted 14 June, 2021; originally announced June 2021.

Comments: 33 pages, 3 algorithms, 5 figures, 2 tables

Tuning band alignment at a semiconductor-crystalline oxide heterojunction via electrostatic modulation of the interfacial dipole

Authors: M. Chrysler, J. Gabel, T. -L. Lee, A. N. Penn, B. E. Matthews, D. M. Kepaptsoglou, Q. M. Ramasse, J. R. Paudel, R. K. Sah, J. D. Grassi, Z. Zhu, A. X. Gray, J. M. LeBeau, S. R. Spurgeon, S. A. Chambers, P. V. Sushko, J. H. Ngai

Abstract: We demonstrate that the interfacial dipole associated with bonding across the SrTiO3/Si heterojunction can be tuned through space charge, thereby enabling the band alignment to be altered via do**. Oxygen impurities in Si act as donors that create space charge by transferring electrons across the interface into SrTiO3. The space charge induces an electric field that modifies the interfacial dipo… ▽ More We demonstrate that the interfacial dipole associated with bonding across the SrTiO3/Si heterojunction can be tuned through space charge, thereby enabling the band alignment to be altered via do**. Oxygen impurities in Si act as donors that create space charge by transferring electrons across the interface into SrTiO3. The space charge induces an electric field that modifies the interfacial dipole, thereby tuning the band alignment from type-II to type-III. The transferred charge, resulting in built-in electric fields, and change in band alignment are manifested in electrical transport and hard x-ray photoelectron spectroscopy measurements. Ab initio models reveal the interplay between polarization and band offsets. We find that band offsets can be tuned by modulating the density of space charge across the interface. Functionalizing the interface dipole to enable electrostatic altering of band alignment opens new pathways to realize novel behavior in semiconducting heterojunctions. △ Less

Submitted 27 May, 2021; originally announced May 2021.

Journal ref: Phys. Rev. Materials 5, 104603 (2021)

Learning to Generate Novel Scene Compositions from Single Images and Videos

Authors: Vadim Sushko, Juergen Gall, Anna Khoreva

Abstract: Training GANs in low-data regimes remains a challenge, as overfitting often leads to memorization or training divergence. In this work, we introduce One-Shot GAN that can learn to generate samples from a training set as little as one image or one video. We propose a two-branch discriminator, with content and layout branches designed to judge the internal content separately from the scene layout re… ▽ More Training GANs in low-data regimes remains a challenge, as overfitting often leads to memorization or training divergence. In this work, we introduce One-Shot GAN that can learn to generate samples from a training set as little as one image or one video. We propose a two-branch discriminator, with content and layout branches designed to judge the internal content separately from the scene layout realism. This allows synthesis of visually plausible, novel compositions of a scene, with varying content and layout, while preserving the context of the original sample. Compared to previous single-image GAN models, One-Shot GAN achieves higher diversity and quality of synthesis. It is also not restricted to the single image setting, successfully learning in the introduced setting of a single video. △ Less

Submitted 12 May, 2021; originally announced May 2021.

Comments: The AI for Content Creation (AICC) workshop at CVPR 2021. The full 8-page version of this submission is available at arXiv:2103.13389

Generating Novel Scene Compositions from Single Images and Videos

Authors: Vadim Sushko, Dan Zhang, Juergen Gall, Anna Khoreva

Abstract: Given a large dataset for training, generative adversarial networks (GANs) can achieve remarkable performance for the image synthesis task. However, training GANs in extremely low data regimes remains a challenge, as overfitting often occurs, leading to memorization or training divergence. In this work, we introduce SIV-GAN, an unconditional generative model that can generate new scene composition… ▽ More Given a large dataset for training, generative adversarial networks (GANs) can achieve remarkable performance for the image synthesis task. However, training GANs in extremely low data regimes remains a challenge, as overfitting often occurs, leading to memorization or training divergence. In this work, we introduce SIV-GAN, an unconditional generative model that can generate new scene compositions from a single training image or a single video clip. We propose a two-branch discriminator architecture, with content and layout branches designed to judge internal content and scene layout realism separately from each other. This discriminator design enables synthesis of visually plausible, novel compositions of a scene, with varying content and layout, while preserving the context of the original sample. Compared to previous single image GANs, our model generates more diverse, higher quality images, while not being restricted to a single image setting. We further introduce a new challenging task of learning from a few frames of a single video. In this training setup the training images are highly similar to each other, which makes it difficult for prior GAN models to achieve a synthesis of both high quality and diversity. △ Less

Submitted 13 December, 2023; v1 submitted 24 March, 2021; originally announced March 2021.

Comments: Accepted for publication in Computer Vision and Image Understanding: https://www.sciencedirect.com/science/article/pii/S1077314223002680. Code repository: https://github.com/boschresearch/one-shot-synthesis

Defect-Induced Magnetic Skyrmion in Two-Dimensional Chromium Tri-Iodide Monolayer

Authors: Ryan A. Beck, Lixin Lu, Peter V. Sushko, Xiaodong Xu, Xiaosong Li

Abstract: Chromium iodide monolayers, which have different magnetic properties in comparison to the bulk chromium iodide, have been shown to form skyrmionic states in applied electromagnetic fields or in Janus-layer devices. In this work, we demonstrate that spin-canted solutions can be induced into monolayer chromium iodide by select substitution of iodide atoms with isovalent impurities. Several concentra… ▽ More Chromium iodide monolayers, which have different magnetic properties in comparison to the bulk chromium iodide, have been shown to form skyrmionic states in applied electromagnetic fields or in Janus-layer devices. In this work, we demonstrate that spin-canted solutions can be induced into monolayer chromium iodide by select substitution of iodide atoms with isovalent impurities. Several concentrations and spatial configurations of halide substitutional defects are selected to probe the coupling between the local defect-induced geometric distortions and orientation of chromium magnetic moments. This work provides atomic-level insight into how atomically precise strain-engineering can be used to create and control complex magnetic patterns in chromium iodide layers and lays out the foundation for investigating the field- and geometric-dependent magnetic properties in similar two-dimensional materials. △ Less

Submitted 4 March, 2021; originally announced March 2021.

You Only Need Adversarial Supervision for Semantic Image Synthesis

Authors: Vadim Sushko, Edgar Schönfeld, Dan Zhang, Juergen Gall, Bernt Schiele, Anna Khoreva

Abstract: Despite their recent successes, GAN models for semantic image synthesis still suffer from poor image quality when trained with only adversarial supervision. Historically, additionally employing the VGG-based perceptual loss has helped to overcome this issue, significantly improving the synthesis quality, but at the same time limiting the progress of GAN models for semantic image synthesis. In this… ▽ More Despite their recent successes, GAN models for semantic image synthesis still suffer from poor image quality when trained with only adversarial supervision. Historically, additionally employing the VGG-based perceptual loss has helped to overcome this issue, significantly improving the synthesis quality, but at the same time limiting the progress of GAN models for semantic image synthesis. In this work, we propose a novel, simplified GAN model, which needs only adversarial supervision to achieve high quality results. We re-design the discriminator as a semantic segmentation network, directly using the given semantic label maps as the ground truth for training. By providing stronger supervision to the discriminator as well as to the generator through spatially- and semantically-aware discriminator feedback, we are able to synthesize images of higher fidelity with better alignment to their input label maps, making the use of the perceptual loss superfluous. Moreover, we enable high-quality multi-modal image synthesis through global and local sampling of a 3D noise tensor injected into the generator, which allows complete or partial image change. We show that images synthesized by our model are more diverse and follow the color and texture distributions of real images more closely. We achieve an average improvement of $6$ FID and $5$ mIoU points over the state of the art across different datasets using only adversarial supervision. △ Less

Submitted 19 March, 2021; v1 submitted 8 December, 2020; originally announced December 2020.

Comments: Published at ICLR 2021 (Main Conference). Code repository: https://github.com/boschresearch/OASIS

Microscopic model of stacking-fault potential and exciton wave function in GaAs

Authors: Mikhail V. Durnev, Mikhail M. Glazov, Xiayu Linpeng, Maria L. K. Viitaniemi, Bethany Matthews, Steven R. Spurgeon, P. V. Sushko, Andreas D. Wieck, Arne Ludwig, Kai-Mei C. Fu

Abstract: Two-dimensional stacking fault defects embedded in a bulk crystal can provide a homogeneous trap** potential for carriers and excitons. Here we utilize state-of-the-art structural imaging coupled with density functional and effective-mass theory to build a microscopic model of the stacking-fault exciton. The diamagnetic shift and exciton dipole moment at different magnetic fields are calculated… ▽ More Two-dimensional stacking fault defects embedded in a bulk crystal can provide a homogeneous trap** potential for carriers and excitons. Here we utilize state-of-the-art structural imaging coupled with density functional and effective-mass theory to build a microscopic model of the stacking-fault exciton. The diamagnetic shift and exciton dipole moment at different magnetic fields are calculated and compared with the experimental photoluminescence of excitons bound to a single stacking fault in GaAs. The model is used to further provide insight into the properties of excitons bound to the double-well potential formed by stacking fault pairs. This microscopic exciton model can be used as an input into models which include exciton-exciton interactions to determine the excitonic phases accessible in this system. △ Less

Submitted 1 November, 2019; originally announced November 2019.

Comments: 12 pages, 10 figures

Journal ref: Phys. Rev. B 101, 125420 (2020)

Hole-Induced Electronic and Optical Transitions in La1-xSrxFeO3 Epitaxial Thin Films

Authors: Le Wang, Yingge Du, Peter V. Sushko, Mark E. Bowden, Kelsey A. Stoerzinger, Steven M. Heald, Mark. D. Scafetta, Tiffany C. Kaspar, Scott. A Chambers

Abstract: We have investigated the electronic and optical properties of epitaxial La1-xSrxFeO3 for x from 0 to 1 prepared by molecular beam epitaxy. Core-level and valence-band x-ray photoemission features monotonically shift to lower binding energy with increasing x, indicating downward movement of the Fermi level toward to the valence band maximum. Both Fe 2p and O 1s spectra broaden to higher binding ene… ▽ More We have investigated the electronic and optical properties of epitaxial La1-xSrxFeO3 for x from 0 to 1 prepared by molecular beam epitaxy. Core-level and valence-band x-ray photoemission features monotonically shift to lower binding energy with increasing x, indicating downward movement of the Fermi level toward to the valence band maximum. Both Fe 2p and O 1s spectra broaden to higher binding energy with increasing x, consistent with delocalization of Sr-induced holes in the Fe 3d/O 2p hybridized valence band. Combining X-ray valence band photoemission and O K-edge x-ray absorption data, we map the evolution of the occupied and unoccupied bands and observe a narrowing of the gap, along with a transfer of state density from just below to just above the Fermi level, resulting from hole do**. In-plane transport measurements confirm that the material becomes a p-type semiconductor at lower do** levels and exhibits a insulator-to-metal transition at x equal to 1. Sub-gap optical transitions revealed by spectroscopic ellipsometry are explained based on insight from theoretical densities of states and first-principles calculations of optical absorption spectra. △ Less

Submitted 27 November, 2018; originally announced November 2018.

Journal ref: Phys. Rev. Materials 3, 025401 (2019)

Charge transfer and tunable built-in electric fields across semiconductor-crystalline oxide interfaces

Authors: Zheng Hui Lim, Nicholas F. Quackenbush, Aubrey Penn, Matthew Chrysler, Mark Bowden, Zihua Zhu, James M. Ablett, Tien-lin Lee, James M. LeBeau, Joseph C. Woicik, Peter V. Sushko, Scott A. Chambers, Joseph H. Ngai

Abstract: Built-in electric fields across heterojunctions between semiconducting materials underpin the functionality of modern device technologies. Heterojunctions between semiconductors and epitaxially grown crystalline oxides provide a rich setting in which built-in fields can be explored. Here, we present an electrical transport and hard X-ray photoelectron spectroscopy study of epitaxial SrNbxTi1-xO3-δ… ▽ More Built-in electric fields across heterojunctions between semiconducting materials underpin the functionality of modern device technologies. Heterojunctions between semiconductors and epitaxially grown crystalline oxides provide a rich setting in which built-in fields can be explored. Here, we present an electrical transport and hard X-ray photoelectron spectroscopy study of epitaxial SrNbxTi1-xO3-δ / Si heterojunctions. A non-monotonic anomaly in the sheet resistance is observed near room temperature, which is accompanied by a crossover in sign of the Hall resistance. The crossover is consistent with the formation of a hole gas in the Si and the presence of a built-in field. Hard X-ray photoelectron spectroscopy measurements reveal pronounced asymmetric features in both the SrNbxTi1-xO3-δ and Si core-level spectra that we show arise from built-in fields. The extended probe depth of hard X-ray photoelectron spectroscopy enables band bending across the SrNbxTi1-xO3-δ / Si heterojunction to be spatially mapped. Band alignment at the interface and surface depletion in SrNbxTi1-xO3-δ are implicated in the formation of the hole gas and built-in fields. Control of charge transfer and built-in electric fields across semiconductor-crystalline oxide interfaces opens a pathway to novel functional heterojunctions. △ Less

Submitted 10 October, 2018; originally announced October 2018.

Layer-resolved band bending at the n-SrTiO3(001)/p-Ge(001) interface

Authors: Y. Du, P. V. Sushko, S. R. Spurgeon, M. E. Bowden, J. M. Ablett, T. -L. Lee, N. F. Quackenbush, J. C. Woicik, S. A. Chambers

Abstract: The electronic properties of epitaxial heterojunctions consisting of the prototypical perovskite oxide semiconductor,n-SrTiO3 and the high-mobility Group IV semiconductor p-Ge have been investigated. Hard x-ray photoelectron spectroscopy with a new method of analysis has been used to determine band alignment while at the same time quantifying a large built-in potential found to be present within t… ▽ More The electronic properties of epitaxial heterojunctions consisting of the prototypical perovskite oxide semiconductor,n-SrTiO3 and the high-mobility Group IV semiconductor p-Ge have been investigated. Hard x-ray photoelectron spectroscopy with a new method of analysis has been used to determine band alignment while at the same time quantifying a large built-in potential found to be present within the Ge. Accordingly, the built-in potential within the Ge has been mapped in a layer-resolved fashion. Electron transfer from donors in the n-SrTiO3 to the p-Ge creates a space-charge region in the Ge resulting in downward band bending which spans most of the Ge gap. This strong downward band bending facilitates visible-light, photo-generated electron transfer from Ge to STO, favorable to drive the hydrogen evolution reaction associated with water splitting. Ti 2p and Sr 3d core-level line shapes reveal that the STO bands are flat despite the space-charge layer therein. Inclusion of the effect of Ge band bending on band alignment is significant, amounting to a ~0.4 eV reduction in valence band offset compared to the value resulting from using spectra averaged over all layers. Density functional theory allows candidate interface structural models deduced from scanning transmission electron microscopy images to be simulated and structurally optimized. These structures are used to generate multi-slice simulations that reproduce the experimental images quite well. The calculated band offsets for these structures are in good agreement with experiment. △ Less

Submitted 13 August, 2018; originally announced August 2018.

Comments: 29 pages, 10 figures

Journal ref: Phys. Rev. Materials 2, 094602 (2018)

Interface properties and built-in potential profile of a LaCrO$_3$/SrTiO$_3$ superlattice determined by standing-wave excited photoemission spectroscopy

Authors: Shih-Chieh Lin, Cheng-Tai Kuo, Ryan B. Comes, Julien E. Rault, Jean-Pascal Rueff, Slavomir Nemšák, Amina Taleb, Jeffrey B. Kortright, Julia Meyer-Ilse, Eric Gullikson, Peter V. Sushko, Steven R. Spurgeon, Mathias Gehlmann, Mark E. Bowden, Lukasz Plucinski, Scott A. Chambers, Charles S. Fadley

Abstract: LaCrO$_3$ (LCO) / SrTiO$_3$ (STO) heterojunctions are intriguing due to a polar discontinuity along (001), two distinct and controllable interface structures [(LaO)$^+$/(TiO$_2$)$^0$ and (SrO)$^0$/(CrO$_2$)$^-$], and interface-induced polarization. In this study, we have used soft- and hard x-ray standing-wave excited photoemission spectroscopy (SW-XPS) to generate a quantitative determination of… ▽ More LaCrO$_3$ (LCO) / SrTiO$_3$ (STO) heterojunctions are intriguing due to a polar discontinuity along (001), two distinct and controllable interface structures [(LaO)$^+$/(TiO$_2$)$^0$ and (SrO)$^0$/(CrO$_2$)$^-$], and interface-induced polarization. In this study, we have used soft- and hard x-ray standing-wave excited photoemission spectroscopy (SW-XPS) to generate a quantitative determination of the elemental depth profiles and interface properties, band alignments, and the depth distribution of the interface-induced built-in potentials in the two constituent oxides. We observe an alternating charged interface configuration: a positively charged (LaO)$^+$/(TiO$_2$)$^0$ intermediate layer at the LCO$_\textbf{top}$/STO$_\textbf{bottom}$ interface and a negatively charged (SrO)$^0$/(CrO$_2$)$^-$ intermediate layer at the STO$_\textbf{top}$/LCO$_\textbf{bottom}$ interface. Using core-level SW data, we have determined the depth distribution of species, including through the interfaces, and these results are in excellent agreement with scanning transmission electron microscopy and electron energy loss spectroscopy (STEM-EELS) map** of local structure and composition. SW-XPS also enabled deconvolution of the LCO-contributed and STO- contributed matrix-element-weighted density of states (MEWDOSs) from the valence band (VB) spectra for the LCO/STO superlattice (SL). Monitoring the VB edges of the deconvoluted MEWDOS shifts with a change in probing profile, the alternating charge- induced built-in potentials are observed in both constituent oxides. Finally, using a two-step simulation approach involving first core-level binding energy shifts and then valence-band modeling, the built-in potential gradients across the SL are resolved in detail and represented by the depth distribution of VB edges. △ Less

Submitted 31 August, 2018; v1 submitted 27 February, 2018; originally announced February 2018.

Comments: Main text: 29 pages, 5 figures; Supplementary Information: 20 pages, 10 figures

Journal ref: Phys. Rev. B 98, 165124 (2018)

The Onset of Phase Separation in the Double Perovskite Oxide La$_2$MnNiO$_6$

Authors: Steven R. Spurgeon, Peter V. Sushko, Arun Devaraj, Yingge Du, Timothy Droubay, Scott A. Chambers

Abstract: Identification of kinetic and thermodynamic factors that control crystal nucleation and growth represents a central challenge in materials synthesis. Here we report that apparently defect-free growth of La$_2$MnNiO$_6$ (LMNO) thin films supported on SrTiO$_3$ (STO) proceeds up to $1-5$ nm, after which it is disrupted by precipitation of NiO phases. Local geometric phase analysis and ensemble-avera… ▽ More Identification of kinetic and thermodynamic factors that control crystal nucleation and growth represents a central challenge in materials synthesis. Here we report that apparently defect-free growth of La$_2$MnNiO$_6$ (LMNO) thin films supported on SrTiO$_3$ (STO) proceeds up to $1-5$ nm, after which it is disrupted by precipitation of NiO phases. Local geometric phase analysis and ensemble-averaged X-ray reciprocal space map** show no change in the film strain away from the interface, indicating that mechanisms other than strain relaxation induce the formation of the NiO phases. $Ab \, initio$ simulations suggest that oxygen vacancies become more likely with increasing thickness, due to the electrostatic potential build-up associated with the polarity mismatch at the film-substrate interface, this, in turn, promotes the formation of Ni-rich regions. These results suggest that the precipitate-free region could be extended further by increasing the oxygen chemical potential through the use of an elevated oxygen pressure or by incorporating electron redistributing dopants to suppress the built-in potential. △ Less

Submitted 15 April, 2018; v1 submitted 23 October, 2017; originally announced October 2017.

Comments: 17 pages, 4 figures

Journal ref: Phys. Rev. B 97, 134110 (2018)

Dynamic Interface Rearrangement in LaFeO$_3$ / $n$-SrTiO$_3$ Heterojunctions

Authors: Steven R. Spurgeon, Peter V. Sushko, Ryan B. Comes, Scott A. Chambers

Abstract: Thin film synthesis methods developed over the past decades have unlocked emergent interface properties ranging from conductivity to ferroelectricity. However, our attempts to exercise precise control over interfaces are constrained by a limited understanding of growth pathways and kinetics. Here we demonstrate that shuttered molecular beam epitaxy induces rearrangements of atomic planes at a pola… ▽ More Thin film synthesis methods developed over the past decades have unlocked emergent interface properties ranging from conductivity to ferroelectricity. However, our attempts to exercise precise control over interfaces are constrained by a limited understanding of growth pathways and kinetics. Here we demonstrate that shuttered molecular beam epitaxy induces rearrangements of atomic planes at a polar / non-polar junction of LaFeO$_3$ (LFO) / $n$-SrTiO$_3$ (STO) depending on the substrate termination. Surface characterization confirms that substrates with two different (TiO$_2$ and SrO) terminations were prepared prior to LFO deposition; however, local electron energy loss spectroscopy measurements of the final heterojunctions show a predominantly LaO / TiO$_2$ interfacial junction in both cases. Ab initio simulations suggest that the interfaces can be stabilized by trap** extra oxygen (in LaO / TiO$_2$) and forming oxygen vacancies (in FeO$_2$ / SrO), which points to different growth kinetics in each case and may explain the apparent disappearance of the FeO$_2$ / SrO interface. We conclude that judicious control of deposition timescales can be used to modify growth pathways, opening new avenues to control the structure and properties of interfacial systems. △ Less

Submitted 22 August, 2017; originally announced August 2017.

Comments: 21 pages, 7 figures

Journal ref: Phys. Rev. Materials 1, 063401 (2017)

Ferroelectric metal-oxide-semiconductor capacitors using ultrathin single crystalline SrZrxTi1-xO3

Authors: Reza M. Moghadam, Zhiyong Xiao, Kamyar Ahmadi-Majlan, Everett D. Grimley, Mark Bowden, Phuong-Vu Ong, Scott A. Chambers, James M. Lebeau, Xia Hong, Peter V. Sushko, Joseph H. Ngai

Abstract: The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, ferroelectric materials integrated on semiconductors could lead to low-power field-effect devices that can be used for logic and memory. Essential to realizing such field-effect devices is the development of ferroelectric metal-… ▽ More The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, ferroelectric materials integrated on semiconductors could lead to low-power field-effect devices that can be used for logic and memory. Essential to realizing such field-effect devices is the development of ferroelectric metal-oxide-semiconductor (MOS) capacitors, in which the polarization of a ferroelectric gate is coupled to the surface potential of a semiconducting channel. Here we demonstrate that ferroelectric MOS capacitors can be realized using single crystalline SrZrxTi1-xO3 (x = 0.7) that has been epitaxially grown on Ge. We find that the ferroelectric properties of SrZrxTi1-xO3 are exceptionally robust, as gate layers as thin as 5 nm corresponding to an equivalent-oxide-thickness of just 1.0 nm exhibit a ~ 2 V hysteretic window in the capacitance-voltage characteristics. The development of ferroelectric MOS capacitors with nanoscale gate thicknesses opens new vistas for nanoelectronic devices. △ Less

Submitted 28 February, 2017; originally announced March 2017.

Interface-induced Polarization in SrTiO$_3$-LaCrO$_3$ Superlattices

Authors: Ryan B. Comes, Steven R. Spurgeon, Steve M. Heald, Despoina M. Kepaptsoglou, Lewys Jones, Phuong Vu Ong, Mark E. Bowden, Quentin M. Ramasse, Peter V. Sushko, Scott A. Chambers

Abstract: Epitaxial interfaces and superlattices comprised of polar and non-polar perovskite oxides have generated considerable interest because they possess a range of desirable properties for functional devices. In this work, emergent polarization in superlattices of SrTiO$_3$ (STO) and LaCrO$_3$ (LCO) is demonstrated. By controlling the interfaces between polar LCO and non-polar STO, polarization is indu… ▽ More Epitaxial interfaces and superlattices comprised of polar and non-polar perovskite oxides have generated considerable interest because they possess a range of desirable properties for functional devices. In this work, emergent polarization in superlattices of SrTiO$_3$ (STO) and LaCrO$_3$ (LCO) is demonstrated. By controlling the interfaces between polar LCO and non-polar STO, polarization is induced throughout the STO layers of the superlattice. Using x-ray absorption near-edge spectroscopy and aberration-corrected scanning transmission electron microscopy displacements of the Ti cations off-center within TiO6 octahedra along the superlattice growth direction are measured. This distortion gives rise to built-in potential gradients within the STO and LCO layers, as measured by in situ x-ray photoelectron spectroscopy. Density functional theory models explain the mechanisms underlying this behavior, revealing the existence of both an intrinsic polar distortion and a built-in electric field, which are due to alternately positively and negatively charged interfaces in the superlattice. This study paves the way for controllable polarization for carrier separation in multilayer materials and highlights the crucial role that interface structure plays in governing such behavior. △ Less

Submitted 8 April, 2016; originally announced April 2016.

Comments: 19 pages, 3 figures, supplement: 13 pages, 7 figures, Advanced Materials Interfaces, Early View, 2016

Hole-induced insulator-to-metal transition in La1-xSrxCrO3 epitaxial films

Authors: K. H. L Zhang, Y. Du, P. V. Sushko, M. E. Bowden, V. Shutthanandan, S. Sallis, L. F. J. Piper, S. A. Chambers

Abstract: We have investigated the evolution of the electronic properties of La1-xSrxCrO3 (for the full range of x) epitaxial films deposited by molecular beam epitaxy (MBE) using x-ray diffraction, x-ray photoemission spectroscopy, Rutherford backscattering spectrometry, x-ray absorption spectroscopy, electrical transport, and ab initio modeling. LaCrO3 is an antiferromagnetic insulator whereas SrCrO3 is a… ▽ More We have investigated the evolution of the electronic properties of La1-xSrxCrO3 (for the full range of x) epitaxial films deposited by molecular beam epitaxy (MBE) using x-ray diffraction, x-ray photoemission spectroscopy, Rutherford backscattering spectrometry, x-ray absorption spectroscopy, electrical transport, and ab initio modeling. LaCrO3 is an antiferromagnetic insulator whereas SrCrO3 is a metal. Substituting Sr2+ for La3+ in LaCrO3 effectively dopes holes into the top of valence band, leading to Cr4+ (3d2) local electron configurations. Core-level and valence-band features monotonically shift to lower binding energy with increasing x, indicating downward movement of the Fermi level toward the valence band maximum. The material becomes a p-type semiconductor at lower do** levels and an insulator-to-metal transition is observed at x greater than or equal to 0.65, but only when the films are deposited with in-plane compression via lattice-mismatched heteroepitaxy. Valence band x-ray photoemission spectroscopy reveals diminution of electronic state density at the Cr 3d t2g-derived top of the valence band while O K-edge x-ray absorption spectroscopy shows the development of a new unoccupied state above the Fermi level as holes are doped into LaCrO3. The evolution of these bands with Sr concentration is accurately captured using density functional theory with a Hubbard U correction of 3.0 eV (DFT + U). Resistivity data in the semiconducting regime (x less than or equal to 0.50) do not fit perfectly well to either a polaron hop** or band conduction model, but are best interpreted in terms of a hybrid model. The activation energies extracted from these fits are well reproduced by DFT + U. △ Less

Submitted 4 February, 2015; originally announced February 2015.

Cation nonstoichiometry and its impact on nucleation, structure and defect formation in complex oxide heteroepitaxy : LaCrO3 on SrTiO3(001)

Authors: L. Qiao, K. H. L. Zhang, M. E. Bowden, V. Shutthanandan, R. Colby, Y. Du, B. Kabius, P. V. Sushko, S. A. Chambers

Abstract: Our ability to design and fabricate electronic devices with reproducible properties using complex oxides is critically dependent on our ability to controllably synthesize these materials in thin-film form. Structure-property relationships are intimately tied to film and interface composition. Here we report on the effects of cation stoichiometry in LaCrO3 heteroepitaxial films prepared using molec… ▽ More Our ability to design and fabricate electronic devices with reproducible properties using complex oxides is critically dependent on our ability to controllably synthesize these materials in thin-film form. Structure-property relationships are intimately tied to film and interface composition. Here we report on the effects of cation stoichiometry in LaCrO3 heteroepitaxial films prepared using molecular beam epitaxy. We show that LaCrO3 films grow pseudomorphically on SrTiO3(001) over a wide range of La-to-Cr atom ratios. However, the growth mode and structural quality are sensitive to the La-to-Cr ratio, with La-rich films being of considerably lower structural quality than Cr-rich films. Cation mixing occurs at the interface for all La-to-Cr ratios investigated, and is not quenched by deposition at ambient temperature. Indiffused La atoms occupy Sr sites in the substrate. The presence of defects in the SrTiO3 substrate is implicated in promoting La indiffusion by comparing the properties of LaCrO3/SrTiO3 with those of LaCrO3/Si, both prepared at ambient temperature. Additionally, pulsed laser deposition is shown to result in more extensive interfacial mixing than molecular beam epitaxy for deposition at ambient temperature on Si. △ Less

Submitted 12 November, 2012; originally announced November 2012.

Comments: 33 pages, 9 figures

Selective Response of Mesoporous Silicon to Adsorbants with Nitro Groups

Authors: John A. McLeod, Ernst Z. Kurmaev, Peter V. Sushko, Teak D. Boyko, Igor A. Levitsky, Alexander Moewes

Abstract: We demonstrate that the electronic structure of mesoporous silicon is affected by adsorption of nitro-based explosive molecules in a compound-selective manner. This selective response is demonstrated by probing the adsorption of two nitro-based molecular explosives (trinitrotoluene and cyclotrimethylenetrinitramine) and a nonexplosive nitro-based arematic molecule (nitrotoluene) on mesoporous sili… ▽ More We demonstrate that the electronic structure of mesoporous silicon is affected by adsorption of nitro-based explosive molecules in a compound-selective manner. This selective response is demonstrated by probing the adsorption of two nitro-based molecular explosives (trinitrotoluene and cyclotrimethylenetrinitramine) and a nonexplosive nitro-based arematic molecule (nitrotoluene) on mesoporous silicon using soft X-ray spec- troscopy. The Si atoms strongly interact with adsorbed molecules to form Si-O and Si-N bonds, as evident from the large shifts in emission energy present in the Si L2,3 X-ray emission spectroscopy (XES) measurements. Furthermore, we find that the energy gap of mesoporous silicon changes depending on the adsorbant, as estimated from the Si L2,3 XES and 2p X-ray absorption spectroscopy (XAS) measurements. Our ab initio molecular dynamics calculations of model compounds suggest that these changes are due to spontaneous breaking of the nitro groups upon contacting surface Si atoms. This compound-selective change in electronic structure may provide a powerful tool for the detection and identification of trace quantities of airborne explosive molecules. △ Less

Submitted 29 February, 2012; originally announced February 2012.

Comments: 27 pages, 9 figures

Journal ref: Chemistry - A European Journal, 18: 2912-2922 (2012)

Experimental Evidence of Cage Conduction Bands in Superconducting Cement 12CaO$\cdot$7Al$_2$O$_3$

Authors: J. A. McLeod, A. Buling, E. Z. Kurmaev, P. V. Sushko, M. Neumann, L. D. Finkelstein, S. -W. Kim, H. Hosono, A. Moewes

Abstract: Natural 12CaO$\cdot$7Al$_2$O$_3$ (C12A7) is a wide bandgap insulator, but conductivity can be realized by introducing oxygen deficiency. Currently, there are two competing models explaining conductivity in oxygen-deficient C12A7, one involving the electron transfer via a "cage conduction band" inside the nominal band gap, the other involving electron hop** along framework lattice sites. To help… ▽ More Natural 12CaO$\cdot$7Al$_2$O$_3$ (C12A7) is a wide bandgap insulator, but conductivity can be realized by introducing oxygen deficiency. Currently, there are two competing models explaining conductivity in oxygen-deficient C12A7, one involving the electron transfer via a "cage conduction band" inside the nominal band gap, the other involving electron hop** along framework lattice sites. To help resolve this debate, we probe insulating and conducting C12A7 with X-ray emission, X-ray absorption, and X-ray photoemission spectroscopy, which provide a full picture of both the valence and conduction band edges in these materials. These measurements suggest the existence of a narrow conduction band between the main conduction and valence bands common in both conducting and insulating C12A7 and support the theory that free electrons in oxygen-deficient C12A7 occupy the low-energy states of this narrow band. Our measurements are corroborated with density functional theory calculations. △ Less

Submitted 14 January, 2012; originally announced January 2012.

Comments: 20 pages, 6 figures

Journal ref: Phys. Rev. B 85, 045204 (2012)

Instability, Intermixing and Electronic Structure at the Epitaxial LaAlO3/SrTiO3(001) Heterojunction

Authors: S. A. Chambers, M. H. Engelhard, V. Shutthanandan, Z. Zhu, T. C. Droubay, L. Qiao, P. V. Sushko, T. Feng, H. D. Lee, T. Gustafsson, E. Garfunkel, A. B. Shah, J. -M. Zuo, Q. M. Ramasse

Abstract: The question of stability against diffusional mixing at the prototypical LaAlO3/SrTiO3(001) interface is explored using a multi-faceted experimental and theoretical approach. We combine analytical methods with a range of sensitivities to elemental concentrations and spatial separations to investigate interfaces grown using on-axis pulsed laser deposition. We also employ computational modeling base… ▽ More The question of stability against diffusional mixing at the prototypical LaAlO3/SrTiO3(001) interface is explored using a multi-faceted experimental and theoretical approach. We combine analytical methods with a range of sensitivities to elemental concentrations and spatial separations to investigate interfaces grown using on-axis pulsed laser deposition. We also employ computational modeling based on the density function theory as well as classical force fields to explore the energetic stability of a wide variety of intermixed atomic configurations relative to the idealized, atomically abrupt model. Statistical analysis of the calculated energies for the various configurations is used to elucidate the relative thermodynamic stability of intermixed and abrupt configurations. We find that on both experimental and theoretical fronts, the tendency toward intermixing is very strong. We have also measured and calculated key electronic properties such as the presence of electric fields and the value of the valence band discontinuity at the interface. We find no measurable electric field in either the LaAlO3 or SrTiO3, and that the valence band offset is near zero, partitioning the band discontinuity almost entirely to the conduction band edge. Moreover, we find that it is not possible to account for these electronic properties theoretically without including extensive intermixing in our physical model of the interface. The atomic configurations which give the greatest electrostatic stability are those that eliminate the interface dipole by intermixing, calling into question the conventional explanation for conductivity at this interface - electronic reconstruction. Rather, evidence is presented for La indiffusion and do** of the SrTiO3 below the interface as being the cause of the observed conductivity. △ Less

Submitted 7 June, 2010; originally announced June 2010.

Mechanism of phase transitions and the electronic density of states in (La,Sm)FeAsO$_{1-x}$F$_x$ from ab initio calculations

Authors: P. V. Sushko, A. L. Shluger, M. Hirano, H. Hosono

Abstract: The structure and electronic density of states in layered LnFeAsO$_{1-x}$F$_x$ (Ln=La,Sm; $x$=0.0, 0.125, 0.25) are investigated using density functional theory. For the $x$=0.0 system we predict a complex potential energy surface, formed by close-lying single-well and double-well potentials, which gives rise to the tetragonal-to-orthorhombic structural transition, appearance of the magnetic ord… ▽ More The structure and electronic density of states in layered LnFeAsO$_{1-x}$F$_x$ (Ln=La,Sm; $x$=0.0, 0.125, 0.25) are investigated using density functional theory. For the $x$=0.0 system we predict a complex potential energy surface, formed by close-lying single-well and double-well potentials, which gives rise to the tetragonal-to-orthorhombic structural transition, appearance of the magnetic order, and an anomaly in the specific heat capacity observed experimentally at temperatures below $\sim$140--160 K. We propose a mechanism for these transitions and suggest that these phenomena are generic to all compounds containing FeAs layers. For $x>$0.0 we demonstrate that transition temperatures to the superconducting state and their dependence on $x$ correlate well with the calculated magnitude of the electronic density of states at the Fermi energy. △ Less

Submitted 14 July, 2008; originally announced July 2008.

Comments: 4 pages, 3 figures, 1 table

Journal ref: Physical Review B 78, 172508 (2008)

Crystallographic Phase Transition and High-Tc Superconductivity in LaFeAsO:F

Authors: Takatoshi Nomura, Sung Wng Kim, Yoichi Kamihara, Masahiro Hirano, Peter V. Sushko, Kenichi Kato, Masaki Takata, Alexander L. Shluger, Hideo Hosono

Abstract: Undoped LaFeAsO, parent compound of the newly found high-Tc superconductor, exhibits a sharp decrease in the temperature-dependent resistivity at ~160 K. The anomaly can be suppressed by F do** and the superconductivity appears correspondingly, suggesting a close associate of the anomaly with the superconductivity. We examined the crystal structures, magnetic properties and superconductivity o… ▽ More Undoped LaFeAsO, parent compound of the newly found high-Tc superconductor, exhibits a sharp decrease in the temperature-dependent resistivity at ~160 K. The anomaly can be suppressed by F do** and the superconductivity appears correspondingly, suggesting a close associate of the anomaly with the superconductivity. We examined the crystal structures, magnetic properties and superconductivity of undoped (normal conductor) and 14 at.% F-doped LaFeAsO (Tc = 20 K) by synchrotron X-ray diffraction, DC magnetic measurements, and ab initio calculations to demonstrate that the anomaly is associated with a phase transition from tetragonal (P4/nmm) to orthorhombic (Cmma) phases at ~160 K as well as an antiferromagnetic transition at ~140 K. These transitions can be explained by spin configuration-dependent potential energy surfaces derived from the ab initio calculations. The suppression of the transitions is ascribed to interrelated effects of geometric and electronic structural changes due to do** by F- ions. △ Less

Submitted 12 November, 2008; v1 submitted 22 April, 2008; originally announced April 2008.

Comments: 22 pages, 8 figures, 2 tables, Supplementary information is included at the end of the document, accepted for publication in Supercond. Sci. Technol

Journal ref: Supercond. Sci. Technol. 21 (2008) 125028

Phase separation and suppression of critical dynamics at quantum transitions of itinerant magnets: MnSi and (Sr$_{1-x}$Ca$_{x}$)RuO$_{3}$

Authors: Y. J. Uemura, T. Goko, I. M. Gat-Malureanu, J. P. Carlo, P. L. Russo, A. T. Savici, A. Aczel, G. J. MacDougall, J. A. Rdoriguez, G. M. Luke, S. R. Dunsiger, A. McCollam, J. Arai, Ch. Pfleiderer, P. Boeni, K. Yoshimura, E. Baggio-Saitovitch, M. B. Fontes, J. Larrea J., Y. V. Sushko, J. Sereni

Abstract: Quantum phase transitions (QPTs) have been studied extensively in correlated electron systems. Characterization of magnetism at QPTs has, however, been limited by the volume-integrated feature of neutron and magnetization measurements and by pressure uncertainties in NMR studies using powderized specimens. Overcoming these limitations, we performed muon spin relaxation ($μ$SR) measurements which… ▽ More Quantum phase transitions (QPTs) have been studied extensively in correlated electron systems. Characterization of magnetism at QPTs has, however, been limited by the volume-integrated feature of neutron and magnetization measurements and by pressure uncertainties in NMR studies using powderized specimens. Overcoming these limitations, we performed muon spin relaxation ($μ$SR) measurements which have a unique sensitivity to volume fractions of magnetically ordered and paramagnetic regions, and studied QPTs from itinerant heli/ferro magnet to paramagnet in MnSi (single-crystal; varying pressure) and (Sr$_{1-x}$Ca$_{x}$)RuO$_{3}$ (ceramic specimens; varying $x$). Our results provide the first clear evidence that both cases are associated with spontaneous phase separation and suppression of dynamic critical behavior, revealed a slow but dynamic character of the ``partial order'' diffuse spin correlations in MnSi above the critical pressure, and, combined with other known results in heavy-fermion and cuprate systems, suggest a possibility that a majority of QPTs involve first-order transitions and/or phase separation. △ Less

Submitted 17 December, 2006; originally announced December 2006.

Comments: 11 pages, 4 figures, 21 authors, to appear in Nature Physics

Pressure dependence of magnetic and superconducting transitions in sodium cobalt oxides NaxCoO2

Authors: Y. V. Sushko, O. B. Korneta, S. O. Leontsev, R. **, B. C. Sales, D. Mandrus

Abstract: The results of DC magnetization measurements under hydrostatic (helium-gas) pressure are reported for an ambient pressure superconductor Na0.35CoO2.1.4D2O and its precursor compound, the gamma-phase Na0.75CoO2 that is known to combine a metallic conductivity with an unusual magnetic state below ~22K. The obtained data allowed us to present for the first time the pressure dependence of the magnet… ▽ More The results of DC magnetization measurements under hydrostatic (helium-gas) pressure are reported for an ambient pressure superconductor Na0.35CoO2.1.4D2O and its precursor compound, the gamma-phase Na0.75CoO2 that is known to combine a metallic conductivity with an unusual magnetic state below ~22K. The obtained data allowed us to present for the first time the pressure dependence of the magnetic transition in a metallic sodium cobaltate system. This dependence appears to be positive, with the magnetic transition rapidly shifting towards higher temperatures when an applied pressure increases. We ascribe the observed effect to the pressure-induced enhancement of the out-of-plane antiferromagnetic coupling mediated by localized spins interactions (of either superexchange or RKKY type), the scenario consistent with the A-type antiferromagnetic state suggested by recent neutron-scattering data. As for the pressure effect on the superconductivity in Na0.35CoO2.1.4D2O, our measurements established negative and linear for the entire pressure range from 1 bar to 8.3 kbar pressure dependence of Tc, the behavior quite different from the reported by previous workers strong non-linearity of the Tc (P) dependence. (Dated September 12, 2005) PACS numbers: 74.62.Fj, 74.70.-b, 75.20. En, 75.50 Ee, 75.30 Kz. △ Less

Submitted 12 September, 2005; originally announced September 2005.

Comments: 12 pages, 4 figures

Effect of Hydrostatic Pressure on Superconductivity in kappa-[(BEDT-TTF)1-X(Bedse-TTF)X]2Cu[N(CN)2]Br

Authors: Y. V. Sushko, S. O. Leontsev, O. B. Korneta, A. Kawamoto

Abstract: Static susceptibility of kappa-[(BEDT-TTF)1-x(BEDSe-TTF)x]2Cu[N(CN)2]Br alloys with the BEDSe-TTF content near the border-line of ambient pressure superconductivity (x~0.3) has been measured as a function of temperature, magnetic field, and pressure. A non-monotonic pressure dependence is observed for both the superconducting critical temperature and superconducting volume fraction, with both qu… ▽ More Static susceptibility of kappa-[(BEDT-TTF)1-x(BEDSe-TTF)x]2Cu[N(CN)2]Br alloys with the BEDSe-TTF content near the border-line of ambient pressure superconductivity (x~0.3) has been measured as a function of temperature, magnetic field, and pressure. A non-monotonic pressure dependence is observed for both the superconducting critical temperature and superconducting volume fraction, with both quantities showing growth under pressure in the initial pressure range P < 0.3 kbar. The results are discussed in comparison with the data on the related kappa-phase BEDT-TTF superconductors in which not a cation but anion sublattice is modified by alloying, namely the family kappa-(BEDT-TTF)2Cu[N(CN)2]Cl1-xBrx. PACS numbers: 74.62.Fj, 74.70.Kn. △ Less

Submitted 22 August, 2005; originally announced August 2005.

Comments: 8 pages, 7 figures

Effects of hydrostatic pressure on the magnetic susceptibility of ruthenium oxide Sr3Ru2O7: Evidence for pressure-enhanced antiferromagnetic instability

Authors: Yuri V. Sushko, Bruno DeHarak, Gang Cao, G. Shaw, D. K. Powell, J. W. Brill

Abstract: Hydrostatic pressure effects on the temperature- and magnetic field dependencies of the in-plane and out-of-plane magnetization of the bi-layered perovskite Sr3Ru2O7 have been studied by SQUID magnetometer measurements under a hydrostatic helium-gas pressure. The anomalously enhanced low-temperature value of the paramagnetic susceptibility has been found to systematically decrease with increasin… ▽ More Hydrostatic pressure effects on the temperature- and magnetic field dependencies of the in-plane and out-of-plane magnetization of the bi-layered perovskite Sr3Ru2O7 have been studied by SQUID magnetometer measurements under a hydrostatic helium-gas pressure. The anomalously enhanced low-temperature value of the paramagnetic susceptibility has been found to systematically decrease with increasing pressure. The effect is accompanied by an increase of the temperature Tmax of a pronounced peak of susceptibility. Thus, magnetization measurements under hydrostatic pressure reveal that the lattice contraction in the structure of Sr3Ru2O7 promotes antiferromagnetism and not ferromagnetism, contrary to the previous beliefs. The effects can be explained by the enhancement of the inter-bi-layer antiferromagnetic spin coupling, driven by the shortening of the superexchange path, and suppression, due to the band-broadening effect, of competing itinerant ferromagnetic correlations. △ Less

Submitted 11 March, 2003; originally announced March 2003.

Comments: 11 pages, 4 figures

Modelling charge self-trap** in wide-gap dielectrics: Localization problem in local density functionals

Authors: Jacob L. Gavartin, Peter V. Sushko, Alexander L. Shluger

Abstract: We discuss the adiabatic self-trap** of small polarons within the density functional theory (DFT). In particular, we carried out plane-wave pseudo-potential calculations of the triplet exciton in NaCl and found no energy minimum corresponding to the self-trapped exciton (STE) contrary to the experimental evidence and previous calculations. To explore the origin of this problem we modelled the… ▽ More We discuss the adiabatic self-trap** of small polarons within the density functional theory (DFT). In particular, we carried out plane-wave pseudo-potential calculations of the triplet exciton in NaCl and found no energy minimum corresponding to the self-trapped exciton (STE) contrary to the experimental evidence and previous calculations. To explore the origin of this problem we modelled the self-trapped hole in NaCl using hybrid density functionals and an embedded cluster method. Calculations show that the stability of the self-trapped state of the hole drastically depends on the amount of the exact exchange in the density functional: at less than 30% of the Hartree-Fock exchange, only delocalized hole is stable, at 50% - both delocalized and self-trapped states are stable, while further increase of exact exchange results in only the self-trapped state being stable. We argue that the main contributions to the self-trap** energy such as the kinetic energy of the localizing charge, the chemical bond formation of the di-halogen quasi molecule, and the lattice polarization, are represented incorrectly within the Kohn-Sham (KS) based approaches. △ Less

Submitted 10 May, 2002; originally announced May 2002.

Comments: 6 figures, 1 table

Carrier density change in Colossal Magnetoresistive Pyrochlore Tl2Mn2O7

Authors: H. Imai, Y. Shimakawa, Yu. V. Sushko, Y. Kubo

Abstract: Hall resistivity and magneto-thermopower have been measured for colossal magnetoresistive Tl2Mn2O7 over wide temperature and magnetic-field ranges. These measurements revealed that a small number of free electron-like carriers is responsible for the magneto-transport properties. In contrast to perovskite CMR materials, the anomalous Hall coefficient is negligible even in the ferromagnetic state… ▽ More Hall resistivity and magneto-thermopower have been measured for colossal magnetoresistive Tl2Mn2O7 over wide temperature and magnetic-field ranges. These measurements revealed that a small number of free electron-like carriers is responsible for the magneto-transport properties. In contrast to perovskite CMR materials, the anomalous Hall coefficient is negligible even in the ferromagnetic state due to negligibly small skew scattering. The characteristic feature in Tl2Mn2O7 is that the carrier density changes with temperature and the magnetic field. The carrier density increases around TC as the temperature is lowered or as the magnetic field is increased, which explains the CMR of this material. The conduction-band-edge shift, which is caused by the strong s-d interaction between localized Mn moments and s-like conduction electrons, is a possible mechanism for the carrier density change. △ Less

Submitted 21 October, 1999; originally announced October 1999.

Comments: 7 REVTeX pages, 5 eps figures, submitted to PRL