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Tracing Dirac points of topological surface states by ferromagnetic resonance
Authors:
Laura Pietanesi,
Magdalena Marganska,
Thomas Mayer,
Michael Barth,
Lin Chen,
Ji Zou,
Adrian Weindl,
Alexander Liebig,
Rebeca Díaz-Pardo,
Dhavala Suri,
Florian Schmid,
Franz J. Gießibl,
Klaus Richter,
Yaroslav Tserkovnyak,
Matthias Kronseder,
Christian H. Back
Abstract:
Ferromagnetic resonance is used to reveal features of the buried electronic band structure at interfaces between ferromagnetic metals and topological insulators. By monitoring the evolution of magnetic dam**, the application of this method to a hybrid structure consisting of a ferromagnetic layer and a 3D topological insulator reveals a clear fingerprint of the Dirac point and exhibits additiona…
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Ferromagnetic resonance is used to reveal features of the buried electronic band structure at interfaces between ferromagnetic metals and topological insulators. By monitoring the evolution of magnetic dam**, the application of this method to a hybrid structure consisting of a ferromagnetic layer and a 3D topological insulator reveals a clear fingerprint of the Dirac point and exhibits additional features of the interfacial band structure not otherwise observable. The underlying spin-pum** mechanism is discussed in the framework of dissipation of angular momentum by topological surface states (TSSs). Tuning of the Fermi level within the TSS was verified both by varying the stoichiometry of the topological insulator layer and by electrostatic backgating and the dam** values obtained in both cases show a remarkable agreement. The high energy resolution of this method additionally allows us to resolve the energetic shift of the local Dirac points generated by local variations of the electrostatic potential. Calculations based on the chiral tunneling process naturally occurring in TSS agree well with the experimental results.
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Submitted 7 March, 2024; v1 submitted 6 March, 2024;
originally announced March 2024.
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Enhanced Ferromagnetism in Monolayer Cr2Te3 via Topological Insulator Coupling
Authors:
Yunbo Ou,
Murod Mirzhalilov,
Norbert M. Nemes,
Jose L. Martinez,
Mirko Rocci,
Austin Akey,
Wenbo Ge,
Dhavala Suri,
Yi** Wang,
Haile Ambaye,
Jong Keum,
Mohit Randeria,
Nandini Trivedi,
Kenneth S. Burch,
David C. Bell,
Weida Wu,
Don Heiman,
Valeria Lauter,
Jagadeesh S. Moodera,
Hang Chi
Abstract:
Exchange-coupled interfaces are pivotal in exploiting two-dimensional (2D) ferromagnetism. Due to the extraordinary correlations among charge, spin, orbital and lattice degrees of freedom, layered magnetic transition metal chalcogenides (TMCs) bode well for exotic topological phenomena. Here we report the realization of wafer-scale Cr2Te3 down to monolayer (ML) on insulating SrTiO3(111) substrates…
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Exchange-coupled interfaces are pivotal in exploiting two-dimensional (2D) ferromagnetism. Due to the extraordinary correlations among charge, spin, orbital and lattice degrees of freedom, layered magnetic transition metal chalcogenides (TMCs) bode well for exotic topological phenomena. Here we report the realization of wafer-scale Cr2Te3 down to monolayer (ML) on insulating SrTiO3(111) substrates using molecular beam epitaxy. Robust ferromagnetism emerges in 2D Cr2Te3 ML with a Curie temperature TC = 17 K. Moreover, when Cr2Te3 is proximitized with topological insulator (TI) (Bi,Sb)2Te3, the magnetism becomes stronger -- for 1 ML, TC increases to 30 K, while for 2 ML it boosts from 65 K to 82 K. Our experiments and theory strongly indicate that the Bloembergen-Rowland interaction is likely a universal aspect of TC enhancement in TI-coupled magnetic heterostructures. The topological-surface-enhanced magnetism in 2D TMC enables further exchange coupling physics and quantum hybrid studies, including paving the way to realize interface-modulated topological electronics.
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Submitted 22 December, 2023;
originally announced December 2023.
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Nowcasting day-ahead marginal emissions using multi-headed CNNs and deep generative models
Authors:
Dhruv Suri,
Anela Arifi,
Ines Azevedo
Abstract:
Nowcasting day-ahead marginal emissions factors is increasingly important for power systems with high flexibility and penetration of distributed energy resources. With a significant share of firm generation from natural gas and coal power plants, forecasting day-ahead emissions in the current energy system has been widely studied. In contrast, as we shift to an energy system characterized by flexi…
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Nowcasting day-ahead marginal emissions factors is increasingly important for power systems with high flexibility and penetration of distributed energy resources. With a significant share of firm generation from natural gas and coal power plants, forecasting day-ahead emissions in the current energy system has been widely studied. In contrast, as we shift to an energy system characterized by flexible power markets, dispatchable sources, and competing low-cost generation such as large-scale battery or hydrogen storage, system operators will be able to choose from a mix of different generation as well as emission pathways. To fully develop the emissions implications of a given dispatch schedule, we need a near real-time workflow with two layers. The first layer is a market model that continuously solves a security-constrained economic dispatch model. The second layer determines the marginal emissions based on the output of the market model, which is the subject of this paper. We propose using multi-headed convolutional neural networks to generate day-ahead forecasts of marginal and average emissions for a given independent system operator.
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Submitted 2 October, 2023;
originally announced October 2023.
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Transport across junctions of altermagnets with normal metals and ferromagnets
Authors:
Sachchidanand Das,
Dhavala Suri,
Abhiram Soori
Abstract:
Altermagnet (AM) is a novel time reversal symmetry broken magnetic phase with $d$-wave order which has been experimentally realized recently. We discuss theoretical models of altermagnet based systems on lattice and in continuum. We show equivalence between the lattice and continuum models by map** the respective parameters. We study (i) altermagnet-normal metal (NM) and (ii) altermagnet-ferroma…
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Altermagnet (AM) is a novel time reversal symmetry broken magnetic phase with $d$-wave order which has been experimentally realized recently. We discuss theoretical models of altermagnet based systems on lattice and in continuum. We show equivalence between the lattice and continuum models by map** the respective parameters. We study (i) altermagnet-normal metal (NM) and (ii) altermagnet-ferromagnet (FM) junctions, with the aim to quantify transport properties such as conductivity and magnetoresistance. We find that a spin current accompanies charge current when a bias is applied. The magnetoresistance of AM-FM junction switches sign when AM is rotated by $90^{\circ}$ -- a feature unique to the altermagnetic phase.
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Submitted 27 July, 2023; v1 submitted 11 May, 2023;
originally announced May 2023.
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Non-reciprocity of Vortex-limited Critical Current in Conventional Superconducting Micro-bridges
Authors:
Dhavala Suri,
Akashdeep Kamra,
Thomas N. G. Meier,
Matthias Kronseder,
Wolfgang Belzing,
Christian H. Back,
Christoph Strunk
Abstract:
Non-reciprocity in the critical current has been observed in a variety of superconducting systems and has been called the superconducting diode effect. The origin underlying the effect depends on the symmetry breaking mechanisms at play. We investigate superconducting micro bridges of NbN and also NbN/magnetic insulator (MI) hybrids. We observe a large diode efficiency of $\approx$~30\% when an ou…
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Non-reciprocity in the critical current has been observed in a variety of superconducting systems and has been called the superconducting diode effect. The origin underlying the effect depends on the symmetry breaking mechanisms at play. We investigate superconducting micro bridges of NbN and also NbN/magnetic insulator (MI) hybrids. We observe a large diode efficiency of $\approx$~30\% when an out-of-plane magnetic field as small as 25~mT is applied. In both NbN and NbN/MI hybrid, we find that the diode effect vanishes when the magnetic field is parallel to the sample plane. Our observations are consistent with the critical current being determined by the vortex surface barrier. Unequal barriers on the two edges of the superconductor strip result in the diode effect. Furthermore, the rectification is observed up to a temperature $\sim$10~K, which makes the device potential for diode based applications over larger temperature range than before.
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Submitted 13 September, 2022;
originally announced September 2022.
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Interfacial control of vortex-limited critical current in type II superconductor films
Authors:
Marius K. Hope,
Morten Amundsen,
Dhavala Suri,
Jagadeesh S. Moodera,
Akashdeep Kamra
Abstract:
In a small subset of type II superconductor films, the critical current is determined by a weakened Bean-Livingston barrier posed by the film surfaces to vortex penetration into the sample. A film property thus depends sensitively on the surface or interface to an adjacent material. We theoretically investigate the dependence of vortex barrier and critical current in such films on the Rashba spin-…
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In a small subset of type II superconductor films, the critical current is determined by a weakened Bean-Livingston barrier posed by the film surfaces to vortex penetration into the sample. A film property thus depends sensitively on the surface or interface to an adjacent material. We theoretically investigate the dependence of vortex barrier and critical current in such films on the Rashba spin-orbit coupling at their interfaces with adjacent materials. Considering an interface with a magnetic insulator, we find the spontaneous supercurrent resulting from the exchange field and interfacial spin-orbit coupling to substantially modify the vortex surface barrier, consistent with a previous prediction. Thus, we show that the critical currents in superconductor-magnet heterostructures can be controlled, and even enhanced, via the interfacial spin-orbit coupling. Since the latter can be controlled via a gate voltage, our analysis predicts a class of heterostructures amenable to gate-voltage modulation of superconducting critical currents. It also sheds light on the recently observed gate-voltage enhancement of critical current in NbN superconducting films.
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Submitted 18 November, 2021; v1 submitted 9 August, 2021;
originally announced August 2021.
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Emergence of Unconventional Interfacial Magnetic Phenomenon in Topological Insulator-Based Magnetic Heterostructures
Authors:
Dhavala Suri,
Archit Bhardwaj,
Satyaki Sasmal,
Karthik Raman
Abstract:
In a topological insulator (TI)/magnetic insulator (MI) hetero-structure, large spin-orbit coupling of the TI and inversion symmetry breaking at the interface could foster non-planar spin textures such as skyrmions at the interface. This is observed as topological Hall effect in a conventional Hall set-up. While this effect has been observed at the interface of TI/MI, where MI beholds perpendicula…
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In a topological insulator (TI)/magnetic insulator (MI) hetero-structure, large spin-orbit coupling of the TI and inversion symmetry breaking at the interface could foster non-planar spin textures such as skyrmions at the interface. This is observed as topological Hall effect in a conventional Hall set-up. While this effect has been observed at the interface of TI/MI, where MI beholds perpendicular magnetic anisotropy, non-trivial spin-textures that develop in interfacial MI with in-plane magnetic anisotropy is under-reported. In this work, we study Bi$_2$Te$_3$/EuS hetero-structure using planar Hall effect (PHE). We observe planar topological Hall and spontaneous planar Hall features that are characteristic of non-trivial in-plane spin textures at the interface. We find that the latter is minimum when the current and magnetic field directions are aligned parallel, and maximum when they are aligned perpendicularly within the sample plane, which maybe attributed to the underlying planar anisotropy of the spin-texture. These results demonstrate the importance of PHE for sensitive detection and characterization of non-trivial magnetic phase that has evaded exploration in the TI/MI interface.
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Submitted 23 September, 2021; v1 submitted 8 July, 2021;
originally announced July 2021.
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In-depth Analysis of Anisotropic Magnetoconductance in Bi$_2$Se$_3$ thin films with electron-electron interaction corrections
Authors:
Satyaki Sasmal,
Joynarayan Mukherjee,
Dhavala Suri,
Karthik V. Raman
Abstract:
A combination of out-of-plane and in-plane magnetoconductance (MC) study in topological insulators (TI) is often used as an experimental technique to probe weak anti-localization (WAL) response of the topological surface states (TSSs). However, in addition to the above WAL response, weak localization (WL) contribution from conducting bulk states are also known to coexist and contribute to the over…
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A combination of out-of-plane and in-plane magnetoconductance (MC) study in topological insulators (TI) is often used as an experimental technique to probe weak anti-localization (WAL) response of the topological surface states (TSSs). However, in addition to the above WAL response, weak localization (WL) contribution from conducting bulk states are also known to coexist and contribute to the overall MC; a study that has so far received limited attention. In this article, we accurately extract the above WL contribution by systematically analyzing the temperature and magnetic field dependency of conductivity in Bi$_2$Se$_3$ films. For accurate analysis, we quantify the contribution of electron-electron interactions to the measured MC which is often ignored in recent WAL studies. Moreover, we show that the WAL effect arising from the TSSs with finite penetration depth, for out-of-plane and in-plane magnetic field can together explain the anisotropic magnetoconductance (AMC) and, thus, the investigated AMC study can serve as a useful technique to probe the parameters like phase coherence length and penetration depth that characterise the TSSs in 3D TIs. We also demonstrate that increase in bulk-disorder, achieved by growing the films on amorphous SiO$_2$ substrate rather than on crystalline Al$_2$O$_3$(0001), can lead to stronger decoupling between the top and bottom surface states of the film.
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Submitted 17 June, 2021; v1 submitted 14 June, 2021;
originally announced June 2021.
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Observation of Planar Hall Effect in Topological Insulator -- Bi$_2$Te$_3$
Authors:
Archit Bhardwaj,
Syam Prasad P.,
Karthik Raman,
Dhavala Suri
Abstract:
Planar Hall effect (PHE) in topological insulators (TIs) is discussed as an effect that stems mostly from conduction due to topologically protected surface states. Although surfaces states play a critical role and are of utmost importance in TIs, our present study reflects the need for considering the bulk conduction in understanding PHE in TIs. Here, we demonstrate an enhancement in PHE amplitude…
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Planar Hall effect (PHE) in topological insulators (TIs) is discussed as an effect that stems mostly from conduction due to topologically protected surface states. Although surfaces states play a critical role and are of utmost importance in TIs, our present study reflects the need for considering the bulk conduction in understanding PHE in TIs. Here, we demonstrate an enhancement in PHE amplitude by three times by doubling the thickness of Bi$_2$Te$_3$ film on Si (111). The PHE amplitude reaches $\approx$~6 n$Ω$m in 30 quintuple layer (QL) device as compared to $\approx$~2 n$Ω$m in 14 QL. We find that the PHE amplitude increases with temperature in the 30 QL Bi$_2$Te$_3$ films grown on Si (111) and Al$_2$O$_3$ (0001). Our experiments indicate that the contribution of bulk states to PHE in TIs could be significant.
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Submitted 1 June, 2021; v1 submitted 12 April, 2021;
originally announced April 2021.
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Finite transverse conductance in topological insulators under an applied in-plane magnetic field
Authors:
Dhavala Suri,
Abhiram Soori
Abstract:
Recently, in topological insulators (TIs) the phenomenon of planar Hall effect (PHE) wherein a current driven in presence an in-plane magnetic field generates a transverse voltage has been experimentally witnessed. There have been a couple of theoretical explanations of this phenomenon. We investigate this phenomenon based on scattering theory on a normal metal-TI-normal metal hybrid structure and…
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Recently, in topological insulators (TIs) the phenomenon of planar Hall effect (PHE) wherein a current driven in presence an in-plane magnetic field generates a transverse voltage has been experimentally witnessed. There have been a couple of theoretical explanations of this phenomenon. We investigate this phenomenon based on scattering theory on a normal metal-TI-normal metal hybrid structure and calculate the conductances in longitudinal and transverse directions to the applied bias. The transverse conductance depends on the spatial location between the two NM-TI junctions where it is calculated. It is zero in the drain electrode when the chemical potentials of the top and the bottom TI surfaces ($μ_t$ and $μ_b$ respectively) are equal. The longitudinal conductance is $π$-periodic in $φ$-the angle between the bias direction and the direction of the in-plane magnetic field. The transverse conductance is $π$-periodic in $φ$ when $μ_t=μ_b$ whereas it is $2π$-periodic in $φ$ when $μ_t\neqμ_b$. As a function of the magnetic field, the magnitude of transverse conductance increases initially and peaks. At higher magnetic fields, it decays for angles $φ$ closer to $0,π$ whereas oscillates for angles $φ$ close to $π/2$. The conductances oscillate with the length of the TI region. A finite width of the system makes the transport separate into finitely many channels. The features of the conductances are similar to those in the limit of infinitely wide system except when the width is so small that only one channel participates in the transport. When only one channel participates in transport, the transverse conductance in the region $0<x<L$ is zero for $μ_t=μ_b$ and the transverse conductance in the region $x>L$ is zero even for the case $μ_t\neqμ_b$. We understand the features in the obtained results.
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Submitted 29 April, 2021; v1 submitted 19 January, 2021;
originally announced January 2021.
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No COVID-19 Climate Silver Lining in the US Power Sector
Authors:
Max Luke,
Priyanshi Somani,
Turner Cotterman,
Dhruv Suri,
Stephen J. Lee
Abstract:
Recent studies conclude that the global coronavirus (COVID-19) pandemic decreased power sector CO$_2$ emissions globally and in the United States. In this paper, we analyze the statistical significance of CO2 emissions reductions in the U.S. power sector from March through December 2020. We use Gaussian process (GP) regression to assess whether CO2 emissions reductions would have occurred with rea…
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Recent studies conclude that the global coronavirus (COVID-19) pandemic decreased power sector CO$_2$ emissions globally and in the United States. In this paper, we analyze the statistical significance of CO2 emissions reductions in the U.S. power sector from March through December 2020. We use Gaussian process (GP) regression to assess whether CO2 emissions reductions would have occurred with reasonable probability in the absence of COVID-19 considering uncertainty due to factors unrelated to the pandemic and adjusting for weather, seasonality, and recent emissions trends. We find that monthly CO2 emissions reductions are only statistically significant in April and May 2020 considering hypothesis tests at 5% significance levels. Separately, we consider the potential impact of COVID-19 on coal-fired power plant retirements through 2022. We find that only a small percentage of U.S. coal power plants are at risk of retirement due to a possible COVID-19-related sustained reduction in electricity demand and prices. We observe and anticipate a return to pre-COVID-19 CO2 emissions in the U.S. power sector.
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Submitted 28 May, 2021; v1 submitted 15 August, 2020;
originally announced August 2020.
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Modulation Do** via a 2d Atomic Crystalline Acceptor
Authors:
Yi** Wang,
Jesse Balgley,
Eli Gerber,
Mason Gray,
Narendra Kumar,
Xiaobo Lu,
Jia-Qiang Yan,
Arash Fereidouni,
Rabindra Basnet,
Seok Joon Yun,
Dhavala Suri,
Hikari Kitadai,
Takashi Taniguchi,
Kenji Watanabe,
Xi Ling,
Jagadeesh Moodera,
Young Hee Lee,
Hugh O. H. Churchill,
** Hu,
Li Yang,
Eun-Ah Kim,
David G. Mandrus,
Erik A. Henriksen,
Kenneth S. Burch
Abstract:
Two-dimensional (2d) nano-electronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined with \textit{ab initio} calculations establish the large work function and narrow bands of $α$-RuCl$_3$ enable modulation do** of exfoliated, chemical vapor de…
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Two-dimensional (2d) nano-electronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined with \textit{ab initio} calculations establish the large work function and narrow bands of $α$-RuCl$_3$ enable modulation do** of exfoliated, chemical vapor deposition (CVD), and molecular beam epitaxy (MBE) materials. Short-ranged lateral do** (${\leq}65\ \text{nm}$) and high homogeneity are achieved in proximate materials with a single layer of \arucl. This leads to the highest monolayer graphene (mlg) mobilities ($4,900\ \text{cm}^2/ \text{Vs}$) at these high hole densities ($3\times10^{13}\ \text{cm}^{-2}$); and yields larger charge transfer to bilayer graphene (blg) ($6\times10^{13}\ \text{cm}^{-2}$). We further demonstrate proof of principle optical sensing, control via twist angle, and charge transfer through hexagonal boron nitride (hBN).
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Submitted 15 July, 2020; v1 submitted 13 July, 2020;
originally announced July 2020.
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Strain-Tuned Magnetic Anisotropy in Sputtered Thulium Iron Garnet Ultrathin Films and TIG/Au/TIG Valve Structures
Authors:
Gilvânia Vilela,
Hang Chi,
Gregory Stephen,
Charles Settens,
Preston Zhou,
Yunbo Ou,
Dhavala Suri,
Don Heiman,
Jagadeesh Moodera
Abstract:
Defining the magnetic anisotropy for in-plane or out-of-plane easy axis in ferrimagnetic insulators films by controlling the strain, while maintaining high-quality surfaces, is desirable for spintronic and magnonic applications. We investigate ways to tune the anisotropy of amorphous sputtered ultrathin thulium iron garnet (TIG) films, and thus tailor their magnetic properties by the thickness (7.…
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Defining the magnetic anisotropy for in-plane or out-of-plane easy axis in ferrimagnetic insulators films by controlling the strain, while maintaining high-quality surfaces, is desirable for spintronic and magnonic applications. We investigate ways to tune the anisotropy of amorphous sputtered ultrathin thulium iron garnet (TIG) films, and thus tailor their magnetic properties by the thickness (7.5 to 60 nm), substrate choice (GGG and SGGG), and crystallization process. We correlate morphological and structural properties with the magnetic anisotropy of post-growth annealed films. 30 nm thick films annealed at 600 °C show compressive strain favoring an in-plane magnetic anisotropy (IPMA), whereas films annealed above 800 °C are under a tensile strain leading to a perpendicular magnetic anisotropy (PMA). Air-annealed films present a high degree of crystallinity and magnetization saturation close to the bulk value. These results lead to successful fabrication of trilayers TIG/Au/TIG, with coupling between the TIG layers depending on Au thickness. These results will facilitate the use of TIG to create various in situ clean hybrid structures for fundamental interface exchange studies, and towards the development of complex devices. Moreover, the sputtering technique is advantageous as it can be easily scaled up for industrial applications.
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Submitted 21 September, 2020; v1 submitted 24 February, 2020;
originally announced February 2020.
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Large Enhancement of Critical Current in Superconducting Devices by Gate Voltage
Authors:
Mirko Rocci,
Dhavala Suri,
Akashdeep Kamra,
Gilvania Vilela,
Norbert Nemes,
Jose Luis Martinez,
Mar Garcia Hernandez,
Jagadeesh S. Moodera
Abstract:
The gate-voltage-induced suppression of critical currents in metallic superconductors observed recently [De Simoni et al., Nat. Nanotechnol. 13, 802 (2018)] has raised crucial questions regarding the nature and mechanism of the electric field effect in these systems. Here, we demonstrate an enhancement of up to 30 % in critical current in the type II superconductor NbN, micro- and nano superconduc…
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The gate-voltage-induced suppression of critical currents in metallic superconductors observed recently [De Simoni et al., Nat. Nanotechnol. 13, 802 (2018)] has raised crucial questions regarding the nature and mechanism of the electric field effect in these systems. Here, we demonstrate an enhancement of up to 30 % in critical current in the type II superconductor NbN, micro- and nano superconducting bridges, tunable via a back-gate voltage. Our suggested plausible mechanism of this enhancement in critical current based on surface nucleation and pinning of Abrikosov vortices is consistent with expectations and observations for type-II superconductor films with thicknesses comparable to their coherence length. Furthermore we demonstrate infinite electroresistance and a hysteretic resistance dependence on the applied electric field which could lead to logic and memory applications in a superconductors-based low-dissipation digital computing paradigm. Our work thus provides the first demonstration of an electric field enhancement in the superconducting property in metallic superconductors, constituting a crucial step towards understanding of electric field-effects on the fundamental properties of a superconductor and its exploitation for future technologies.
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Submitted 28 January, 2021; v1 submitted 20 February, 2020;
originally announced February 2020.
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Resistivity Anomaly in Weyl Semimetal candidate Molybdenum Telluride
Authors:
Dhavala Suri,
Christopher Linderalv,
Bogdan Karpiak,
Linnea Anderson,
Sandeep Kumar Singh,
Andre Dankert,
F. C. Chou,
Raman Sankar,
F. C. Chou,
Paul Erhart,
Saroj P. Dash,
R. S. Patel
Abstract:
The Weyl semi-metal candidate MoTe$_{2}$ is expected to exhibit a range of exotic electronic transport properties. It exhibits a structural phase transition near room temperature that is evident in the thermal hysteresis in resistivity and thermopower (Seebeck coefficient) as well as large spin-orbit interaction. Here, we also document a resistivity anomaly of up to 13% in the temperature window b…
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The Weyl semi-metal candidate MoTe$_{2}$ is expected to exhibit a range of exotic electronic transport properties. It exhibits a structural phase transition near room temperature that is evident in the thermal hysteresis in resistivity and thermopower (Seebeck coefficient) as well as large spin-orbit interaction. Here, we also document a resistivity anomaly of up to 13% in the temperature window between 25 and 50 K, which is found to be strongly anisotropic. Based on the experimental data in conjunction with density functional theory calculations, we conjecture that the anomaly can be related to the presence of defects in the system. These findings open opportunities for further investigations and understanding of the transport behavior in these newly discovered semi-metallic layered systems.
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Submitted 16 January, 2018;
originally announced January 2018.
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A study of electron and thermal transport in layered Titanium disulphide single crystals
Authors:
Dhavala Suri,
Vantari Siva,
Shalikram Joshi,
Kartik Senapati,
P. K. Sahoo,
Shikha Varma,
R. S. Patel
Abstract:
We present a detailed study of thermal and electrical transport behavior of single crystal Titanium disulphide flakes, which belongs to the two dimensional, transition metal dichalcogenide class of materials. In-plane Seebeck effect measurements revealed a typical metal-like linear temperature dependence in the range of 85 - 285 K. Electrical transport measurements with in-plane current geometry e…
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We present a detailed study of thermal and electrical transport behavior of single crystal Titanium disulphide flakes, which belongs to the two dimensional, transition metal dichalcogenide class of materials. In-plane Seebeck effect measurements revealed a typical metal-like linear temperature dependence in the range of 85 - 285 K. Electrical transport measurements with in-plane current geometry exhibited a nearly T^2 dependence of resistivity in the range of 10 - 300 K. However, transport measurements along the out-of-plane current geometry showed a transition in temperature dependence of resistivity from T^2 to T^5 beyond 200 K. Interestingly, Au ion-irradiated TiS2 samples showed a similar T 5 dependence of resistivity beyond 200 K, even in the current-in-plane geometry. Micro- Raman measurements were performed to study the phonon modes in both pristine and ion-irradiated TiS2 crystals.
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Submitted 15 January, 2018;
originally announced January 2018.
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Electron transport in magnetic tunnel junctions -- a theoretical study of lattice and continuum models
Authors:
Dhavala Suri,
R. S. Patel,
Abhiram Soori
Abstract:
Magnetic tunnel junctions comprising of an insulator sandwiched between two ferromagnetic films are the simplest spintronic devices. Theoretically, these can be modeled by a metallic Hamiltonian in both the lattice and the continuum with an addition of Zeeman field. We calculate conductance at arbitrary orientations of the easy axes of the two ferromagnets. When mapped, the lattice and the continu…
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Magnetic tunnel junctions comprising of an insulator sandwiched between two ferromagnetic films are the simplest spintronic devices. Theoretically, these can be modeled by a metallic Hamiltonian in both the lattice and the continuum with an addition of Zeeman field. We calculate conductance at arbitrary orientations of the easy axes of the two ferromagnets. When mapped, the lattice and the continuum models show a discrepancy in conductance in the limit of a large Zeeman field. We resolve the discrepancy by modeling the continuum theory in an appropriate way.
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Submitted 29 August, 2019; v1 submitted 10 August, 2017;
originally announced August 2017.
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Electron and thermal transport via Variable Range Hop** in MoSe$_{2}$ single crystals
Authors:
Dhavala Suri,
R. S. Patel
Abstract:
Bulk single crystal Molybdenum diselenide has been studied for its electronic and thermal transport properties. We perform resistivity measurements with current in-plane (CIP) and current perpendicular to plane (CPP) as a function of temperature. The CIP measurements exhibit metal to semiconductor transition at $\simeq 31$ K. In the semiconducting phase ($T > 31$ K), the transport is best explaine…
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Bulk single crystal Molybdenum diselenide has been studied for its electronic and thermal transport properties. We perform resistivity measurements with current in-plane (CIP) and current perpendicular to plane (CPP) as a function of temperature. The CIP measurements exhibit metal to semiconductor transition at $\simeq 31$ K. In the semiconducting phase ($T > 31$ K), the transport is best explained by variable range hop** (VRH) model. Large magnitude of resistivity in CPP mode indicates strong structural anisotropy. Seebeck coefficient as a function of temperature measured in the range $90 - 300$ K, also agrees well with the VRH model. The room temperature Seebeck coefficient is found to be $139$ $μ$V/K. VRH fittings of the resistivity and Seebeck coefficient data indicate high degree of localization.
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Submitted 8 July, 2017;
originally announced July 2017.
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Spin Hall Effect measurement techniques
Authors:
Dhavala Suri,
R. S. Patel
Abstract:
Spin Hall Effect is relativistic quantum mechanical effect which enables non-magnetic materials show magnetic phenomena without the application of a magnetic field. With spin Hall Effect, one can realize spintronics devices operating purely on electrical and optical means and eliminate the use of ferromagnets which have associated fringe fields. In this review article, we present the experimental…
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Spin Hall Effect is relativistic quantum mechanical effect which enables non-magnetic materials show magnetic phenomena without the application of a magnetic field. With spin Hall Effect, one can realize spintronics devices operating purely on electrical and optical means and eliminate the use of ferromagnets which have associated fringe fields. In this review article, we present the experimental developments and current understanding of the Spin Hall Effect Phenomena. We discuss various experiments as well as device structures which employ electrical, optical or both techniques to demonstrate Spin Hall effect. Most of these devices structures are simple and easy to fabricate in modern laboratories.
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Submitted 10 August, 2017; v1 submitted 18 June, 2015;
originally announced June 2015.
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Object Oriented Information Computing over WWW
Authors:
Dr. Pushpa R. Suri,
Harmunish Taneja
Abstract:
Traditional search engines on World Wide Web (WWW) focus essentially on relevance ranking at the page level. But this lead to missing innumerable structured information about real-world objects embedded in static Web pages and online Web databases. Page-level information retrieval (IR) can unfortunately lead to highly inaccurate relevance ranking in answering object-oriented queries. On the other…
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Traditional search engines on World Wide Web (WWW) focus essentially on relevance ranking at the page level. But this lead to missing innumerable structured information about real-world objects embedded in static Web pages and online Web databases. Page-level information retrieval (IR) can unfortunately lead to highly inaccurate relevance ranking in answering object-oriented queries. On the other hand, Object Oriented Information Computing (OOIC) is promising and greatly reduces the complexity of the system while improving reusability and manageability. The most distinguishing requirement of today's complex heterogeneous systems is the need of the computing system to instantly adapt to vigorously changing conditions. OOIC allows reflecting the dynamic characteristics of the applications by instantiating objects dynamically. In this paper, major challenges of OOIC as well as its rudiments are recapped. The review includes the insight to PopRank Model and comparison analysis of conventional page rank based IR with OOIC
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Submitted 18 July, 2011;
originally announced July 2011.
