R2D2 -- An equivalent-circuit model that quantitatively describes domain wall conductivity in ferroelectric LiNbO$_3$
Authors:
Manuel Zahn,
Elke Beyreuther,
Iuliia Kiseleva,
Ahmed Samir Lotfy,
Conor J. McCluskey,
Jesi R. Maguire,
Ahmet Suna,
Michael Rüsing,
J. Marty Gregg,
Lukas M. Eng
Abstract:
Ferroelectric domain wall (DW) conductivity (DWC) can be attributed to two separate mechanisms: (a) the injection/ejection of charge carriers across the Schottky barrier formed at the (metal-) electrode-DW junction and (b) the transport of those charge carriers along the DW. Current-voltage (IU) characteristics, recorded at variable temperatures from LiNbO$_3$ (LNO) DWs, are clearly able to differ…
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Ferroelectric domain wall (DW) conductivity (DWC) can be attributed to two separate mechanisms: (a) the injection/ejection of charge carriers across the Schottky barrier formed at the (metal-) electrode-DW junction and (b) the transport of those charge carriers along the DW. Current-voltage (IU) characteristics, recorded at variable temperatures from LiNbO$_3$ (LNO) DWs, are clearly able to differentiate between these two contributions. Practically, they allow us here to directly quantify the physical parameters relevant for the two mechanisms (a) and (b) mentioned above. These are, e.g., the resistance of the DW, the saturation current, the ideality factor, and the Schottky barrier height of the electrode/DW junction. Furthermore, the activation energies needed to initiate the thermally-activated electronic transport along the DWs, can be extracted. In addition, we show that electronic transport along LiNbO$_3$ DWs can be elegantly viewed and interpreted in an adapted semiconductor picture based on a double-diode/double-resistor equivalent circuit model, the R2D2 model. Finally, our R2D2 model was checked for its universality by fitting the DWC data not only to z-cut LNO bulk DWs, but equally to z-cut thin-film LNO DWs, and DWC from x-cut DWs as reported in literature.
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Submitted 19 November, 2023; v1 submitted 19 July, 2023;
originally announced July 2023.
Ferroelectric Domain Wall Logic Gates
Authors:
Ahmet Suna,
Conor J. McCluskey,
Jesi R. Maguire,
Amit Kumar,
Raymond G. P. McQuaid,
J. Marty Gregg
Abstract:
Fundamentally, lithium niobate is an extremely good electrical insulator. However, this can change dramatically when 180° domain walls are present, as they are often found to be strongly conducting. Absolute conductivities depend on the inclination angles of the walls with respect to the [001] polarisation axis and so, if these inclination angles can be altered, then electrical conductivities can…
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Fundamentally, lithium niobate is an extremely good electrical insulator. However, this can change dramatically when 180° domain walls are present, as they are often found to be strongly conducting. Absolute conductivities depend on the inclination angles of the walls with respect to the [001] polarisation axis and so, if these inclination angles can be altered, then electrical conductivities can be tuned, or even toggled on and off. In 500nm thick z-cut ion-sliced thin films, localised wall angle variations can be controlled by both the sense and magnitude of applied electrical bias. We show that this results in a diode-like charge transport response which is effective for half-wave rectification, albeit only at relatively low ac frequencies. Most importantly, however, we also demonstrate that such domain wall diodes can be used to construct "AND" and inclusive "OR" logic gates, where "0" and "1" output states are clearly distinguishable. Realistic device modelling allows an extrapolation of results for the operation of these domain wall diodes in more complex arrangements and, although non-ideal, output states can still be distinguished even in two-level cascade logic. Although conceptually simple, we believe that our experimental demonstration of operational domain wall-enabled logic gates represents a significant step towards the future broader realisation of "domain wall nanoelectronics".
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Submitted 16 September, 2022;
originally announced September 2022.
