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Quality Control (QC) of FBK Preproduction 3D Si Sensors for ATLAS HL-LHC Upgrades
Authors:
D M S Sultan,
Md Arif Abdulla Samy,
J. X. Ye,
M. Boscardin,
F. Ficorella,
S. Ronchin,
G. -F. Dalla Betta
Abstract:
The challenging demands of the ATLAS High Luminosity (HL-LHC) Upgrade aim for a complete swap of new generation sensors that should cope with the ultimate radiation hardness. FBK has been one of the prime foundries to develop and fabricate such radiation-hard 3D silicon (Si) sensors. These sensors are chosen to be deployed into the innermost layer of the ATLAS Inner Tracker (ITk). Recently, a pre-…
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The challenging demands of the ATLAS High Luminosity (HL-LHC) Upgrade aim for a complete swap of new generation sensors that should cope with the ultimate radiation hardness. FBK has been one of the prime foundries to develop and fabricate such radiation-hard 3D silicon (Si) sensors. These sensors are chosen to be deployed into the innermost layer of the ATLAS Inner Tracker (ITk). Recently, a pre-production batch of 3D Si sensors of 50x50 um2 pixel geometry, compatible with the full-size ITKPix (RD53B) readout chip, was fabricated. Two wafers holding temporary metal were diced at IZM, Germany, and a systematic QC test campaign was carried out at the University of Trento electronics laboratory. The paper briefly describes the 3D Si sensor design for ATLAS ITk and the required QC characterization setups. It comprises electrical tests (i.e., I-V, C-V, and I-T) of non-irradiated RD53B sensors. In addition, the study of several parametric analyses, i.e., oxide charge density, oxide thickness, inter-pixel resistance, inter-pixel capacitance, etc., are reported with the aid of Process Control Monitor (PCM) structures.
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Submitted 28 September, 2022; v1 submitted 26 September, 2022;
originally announced September 2022.
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Solid State Detectors and Tracking for Snowmass
Authors:
A. Affolder,
A. Apresyan,
S. Worm,
M. Albrow,
D. Ally,
D. Ambrose,
E. Anderssen,
N. Apadula,
P. Asenov,
W. Armstrong,
M. Artuso,
A. Barbier,
P. Barletta,
L. Bauerdick,
D. Berry,
M. Bomben,
M. Boscardin,
J. Brau,
W. Brooks,
M. Breidenbach,
J. Buckley,
V. Cairo,
R. Caputo,
L. Carpenter,
M. Centis-Vignali
, et al. (110 additional authors not shown)
Abstract:
Tracking detectors are of vital importance for collider-based high energy physics (HEP) experiments. The primary purpose of tracking detectors is the precise reconstruction of charged particle trajectories and the reconstruction of secondary vertices. The performance requirements from the community posed by the future collider experiments require an evolution of tracking systems, necessitating the…
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Tracking detectors are of vital importance for collider-based high energy physics (HEP) experiments. The primary purpose of tracking detectors is the precise reconstruction of charged particle trajectories and the reconstruction of secondary vertices. The performance requirements from the community posed by the future collider experiments require an evolution of tracking systems, necessitating the development of new techniques, materials and technologies in order to fully exploit their physics potential. In this article we summarize the discussions and conclusions of the 2022 Snowmass Instrumentation Frontier subgroup on Solid State and Tracking Detectors (Snowmass IF03).
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Submitted 19 October, 2022; v1 submitted 8 September, 2022;
originally announced September 2022.
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Novel Sensors for Particle Tracking: a Contribution to the Snowmass Community Planning Exercise of 2021
Authors:
M. R. Hoeferkamp,
S. Seidel,
S. Kim,
J. Metcalfe,
A. Sumant,
H. Kagan,
W. Trischuk,
M. Boscardin,
G. -F. Dalla Betta,
D. M. S. Sultan,
N. T. Fourches,
C. Renard,
A. Barbier,
T. Mahajan,
A. Minns,
V. Tokranov,
M. Yakimov,
S. Oktyabrsky,
C. Gingu,
P. Murat,
M. T. Hedges
Abstract:
Five contemporary technologies are discussed in the context of their potential roles in particle tracking for future high energy physics applications. These include sensors of the 3D configuration, in both diamond and silicon, submicron-dimension pixels, thin film detectors, and scintillating quantum dots in gallium arsenide. Drivers of the technologies include radiation hardness, excellent positi…
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Five contemporary technologies are discussed in the context of their potential roles in particle tracking for future high energy physics applications. These include sensors of the 3D configuration, in both diamond and silicon, submicron-dimension pixels, thin film detectors, and scintillating quantum dots in gallium arsenide. Drivers of the technologies include radiation hardness, excellent position, vertex, and timing resolution, simplified integration, and optimized power, cost, and material.
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Submitted 23 February, 2022;
originally announced February 2022.
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Time resolution and power consumption of a monolithic silicon pixel prototype in SiGe BiCMOS technology
Authors:
L. Paolozzi,
R. Cardarelli,
S. Débieux,
Y. Favre,
D. Ferrère,
S. Gonzalez-Sevilla,
G. Iacobucci,
M. Kaynak,
F. Martinelli,
M. Nessi,
H. Rücker,
I. Sanna,
DMS Sultan,
P. Valerio,
E. Zaffaroni
Abstract:
SiGe BiCMOS technology can be used to produce ultra-fast, low-power silicon pixel sensors that provide state-of-the-art time resolution even without an internal gain mechanism. The development of such sensors requires the identification of the main factors that may degrade the timing performance and the characterisation of the dependance of the sensor time resolution on the amplifier power consump…
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SiGe BiCMOS technology can be used to produce ultra-fast, low-power silicon pixel sensors that provide state-of-the-art time resolution even without an internal gain mechanism. The development of such sensors requires the identification of the main factors that may degrade the timing performance and the characterisation of the dependance of the sensor time resolution on the amplifier power consumption. Measurements with a $ \mathrm{^{90}Sr} $ source of a prototype sensor produced in SG13G2 technology from IHP Microelectronics, shows a time resolution of 140 ps at an amplifier current of 7 $ \mathrmμ $A and 45 ps at higher power consumption. A full simulation shows that the resolution on the measurement of the signal time-over-threshold, used to correct for time walk, is the main factor affecting the timing performance.
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Submitted 28 August, 2020; v1 submitted 28 May, 2020;
originally announced May 2020.
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MuPix and ATLASPix -- Architectures and Results
Authors:
A. Schöning,
J. Anders,
H. Augustin,
M. Benoit,
N. Berger,
S. Dittmeier,
F. Ehrler,
A. Fehr,
T. Golling,
S. Gonzalez Sevilla,
J. Hammerich,
A. Herkert,
L. Huth,
G. Iacobucci,
D. Immig,
M. Kiehn,
J. Kröger,
F. Meier,
A. Meneses Gonzalez,
A. Miucci,
L. O. S. Noehte,
I. Peric,
M. Prathapan,
T. Rudzki,
R. Schimassek
, et al. (7 additional authors not shown)
Abstract:
High Voltage Monolithic Active Pixel Sensors (HV-MAPS) are based on a commercial High Voltage CMOS process and collect charge by drift inside a reversely biased diode. HV-MAPS represent a promising technology for future pixel tracking detectors. Two recent developments are presented. The MuPix has a continuous readout and is being developed for the Mu3e experiment whereas the ATLASPix is being dev…
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High Voltage Monolithic Active Pixel Sensors (HV-MAPS) are based on a commercial High Voltage CMOS process and collect charge by drift inside a reversely biased diode. HV-MAPS represent a promising technology for future pixel tracking detectors. Two recent developments are presented. The MuPix has a continuous readout and is being developed for the Mu3e experiment whereas the ATLASPix is being developed for LHC applications with a triggered readout. Both variants have a fully monolithic design including state machines, clock circuitries and serial drivers. Several prototypes and design variants were characterised in the lab and in testbeam campaigns to measure efficiencies, noise, time resolution and radiation tolerance. Results from recent MuPix and ATLASPix prototypes are presented and prospects for future improvements are discussed.
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Submitted 17 February, 2020;
originally announced February 2020.
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Electrical Characterization of 180 nm ATLASPix2 HV-CMOS Monolithic Prototypes for the High-Luminosity LHC
Authors:
D M S Sultan,
S. Gonzalez-Sevilla,
D. Ferrere,
G. Iacobucci,
E. Zaffaroni,
W. Wong,
M. Kiehn,
and M. Benoit
Abstract:
We report on the experimental study made on a successive prototype of High-Voltage CMOS (HV-CMOS) ATLASPix2 sensor for the tracking detector application, developed with 180 nm feature size. These sensors are to qualify mainly the peripheral data processing blocks (e.g. Command Decoder, Trigger Buffer, etc.). It is a smaller version of 24 X 36 pixelated sensor in comparison to the earlier generatio…
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We report on the experimental study made on a successive prototype of High-Voltage CMOS (HV-CMOS) ATLASPix2 sensor for the tracking detector application, developed with 180 nm feature size. These sensors are to qualify mainly the peripheral data processing blocks (e.g. Command Decoder, Trigger Buffer, etc.). It is a smaller version of 24 X 36 pixelated sensor in comparison to the earlier generation of ATLASPix1 fabricated in both ams AG, Austria, and TSI Semiconductors, USA. While ams produced ATLASPix2 showed breakdown voltage 50 V in nonirradiated condition as it was seen on its predecessors ATLASpix1, TSI produced prototypes reported breakdown voltage greater than 100 V. The chosen wafer of MCz 20 Ohm.cm P-type substrate resistivity can deplete a few tenths of um, where the process-driven surface damage can have a greater impact on device operating conditions before and after irradiation. In an aim to understand device intrinsic performance at the irradiated case, a dedicated neutron irradiation campaign has been made at JSI for different fluences. Characterizations have been performed at different temperatures after irradiation to analyze the leakage current and breakdown voltage before and after irradiation. TSI prototypes showed a breakdown voltage decrease 90 V due to impact ionization and enhanced effective do** concentration. Results demonstrated for the neutron-irradiated devices up to the fluence of 2 X 10^15 neq/cm2 can still safely be operated at a voltage high enough to allow for high efficiency. Accelerated Annealing steps also made on selective irradiated ATLASPix2 samples, equivalent to more than two years of room-temperature annealing (at 20 degC), and they showed the reassuring expected breakdown voltage increase and damage constant rate alpha^* (geometry dependent) decrease, driven by the beneficial annealing.
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Submitted 22 April, 2020; v1 submitted 25 October, 2019;
originally announced October 2019.
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A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology
Authors:
G. Iacobucci,
R. Cardarelli,
S. Débieux,
F. A. Di Bello,
Y. Favre,
D. Hayakawa,
M. Kaynak,
M. Nessi,
L. Paolozzi,
H. Rücker,
DMS Sultan,
P. Valerio
Abstract:
A monolithic pixelated silicon detector designed for high time resolution has been produced in the SG13G2 130 nm SiGe BiCMOS technology of IHP Mikroelektronik. This proof-of-concept chip contains hexagonal pixels of 65 μm and 130 μm side. The SiGe front-end electronics implemented provides an equivalent noise charge of 90 and 160 electrons for a pixel capacitance of 70 and 220 fF, respectively, an…
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A monolithic pixelated silicon detector designed for high time resolution has been produced in the SG13G2 130 nm SiGe BiCMOS technology of IHP Mikroelektronik. This proof-of-concept chip contains hexagonal pixels of 65 μm and 130 μm side. The SiGe front-end electronics implemented provides an equivalent noise charge of 90 and 160 electrons for a pixel capacitance of 70 and 220 fF, respectively, and a total time walk of less than 1 ns. Lab measurements with a 90Sr source show a time resolution of the order of 50 ps. This result is competitive with silicon technologies that integrate an avalanche gain mechanism.
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Submitted 26 August, 2019;
originally announced August 2019.
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Detector Technologies for CLIC
Authors:
A. C. Abusleme Hoffman,
G. Parès,
T. Fritzsch,
M. Rothermund,
H. Jansen,
K. Krüger,
F. Sefkow,
A. Velyka,
J. Schwandt,
I. Perić,
L. Emberger,
C. Graf,
A. Macchiolo,
F. Simon,
M. Szalay,
N. van der Kolk,
H. Abramowicz,
Y. Benhammou,
O. Borysov,
M. Borysova,
A. Joffe,
S. Kananov,
A. Levy,
I. Levy,
G. Eigen
, et al. (107 additional authors not shown)
Abstract:
The Compact Linear Collider (CLIC) is a high-energy high-luminosity linear electron-positron collider under development. It is foreseen to be built and operated in three stages, at centre-of-mass energies of 380 GeV, 1.5 TeV and 3 TeV, respectively. It offers a rich physics program including direct searches as well as the probing of new physics through a broad set of precision measurements of Stan…
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The Compact Linear Collider (CLIC) is a high-energy high-luminosity linear electron-positron collider under development. It is foreseen to be built and operated in three stages, at centre-of-mass energies of 380 GeV, 1.5 TeV and 3 TeV, respectively. It offers a rich physics program including direct searches as well as the probing of new physics through a broad set of precision measurements of Standard Model processes, particularly in the Higgs-boson and top-quark sectors. The precision required for such measurements and the specific conditions imposed by the beam dimensions and time structure put strict requirements on the detector design and technology. This includes low-mass vertexing and tracking systems with small cells, highly granular imaging calorimeters, as well as a precise hit-time resolution and power-pulsed operation for all subsystems. A conceptual design for the CLIC detector system was published in 2012. Since then, ambitious R&D programmes for silicon vertex and tracking detectors, as well as for calorimeters have been pursued within the CLICdp, CALICE and FCAL collaborations, addressing the challenging detector requirements with innovative technologies. This report introduces the experimental environment and detector requirements at CLIC and reviews the current status and future plans for detector technology R&D.
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Submitted 7 May, 2019;
originally announced May 2019.
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Electrical characterization of AMS aH18 HV-CMOS after neutrons and protons irradiation
Authors:
D M S Sultan,
Sergio Gonzalez Sevilla,
Didier Ferrere,
Giuseppe Iacobucci,
Ettore Zaffaroni,
Winnie Wong,
Mateus Vicente Barrero Pinto,
Moritz Kiehn,
Mridula Prathapan,
Felix Ehrler,
Ivan Peric,
Antonio Miucci,
John Kenneth Anders,
Armin Fehr,
Michele Weber,
Andre Schoening,
Adrian Herkert,
Heiko Augustin,
Mathieu Benoit
Abstract:
In view of the tracking detector application to the ATLAS High Luminosity LHC (HL-LHC) upgrade, we have developed a new generation of High Voltage CMOS (HV-CMOS) monolithic pixel-sensor prototypes featuring the AMS aH18 (180 nm) commercial CMOS technology. By fully integrating both analog and digital readout-circuitry on the same particle-detecting substrate, current challenges of hybrid sensor te…
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In view of the tracking detector application to the ATLAS High Luminosity LHC (HL-LHC) upgrade, we have developed a new generation of High Voltage CMOS (HV-CMOS) monolithic pixel-sensor prototypes featuring the AMS aH18 (180 nm) commercial CMOS technology. By fully integrating both analog and digital readout-circuitry on the same particle-detecting substrate, current challenges of hybrid sensor technologies, i.e., larger readout input-capacitance, lower production-yield, and higher production and integration cost, can be downscaled. The large electrode design using high-resistivity substrates actively helps to mitigate the charge-trap** effects, making these chips radiation hard. The surface and bulk damage induced in high irradiation environment change the effective do** concentration of the device, which modulates high electric fields as the reverse-bias voltage increases. This effect can cause high leakage current and premature electrical breakdown, driven by impact ionization. In order to assess the characteristics of heavily irradiated samples, we have carried out dedicated campaigns on ATLASPix1 chips that included irradiations of neutrons and protons, made at different facilities. Here, we report on the electrical characterization of the irradiated samples at different ambient conditions, also in comparison to their pre-irradiation properties. Results demonstrate that hadron irradiated devices can be safely operated at a voltage high enough to allow for high efficiency, up to the fluence of 2E15 neq/cm2, beyond the radiation levels (TID and NIEL) expected in the outermost pixel layers of the new ATLAS tracker for HL-LHC.
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Submitted 28 May, 2020; v1 submitted 15 February, 2019;
originally announced February 2019.
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The Compact Linear Collider (CLIC) - 2018 Summary Report
Authors:
The CLIC,
CLICdp collaborations,
:,
T. K. Charles,
P. J. Giansiracusa,
T. G. Lucas,
R. P. Rassool,
M. Volpi,
C. Balazs,
K. Afanaciev,
V. Makarenko,
A. Patapenka,
I. Zhuk,
C. Collette,
M. J. Boland,
A. C. Abusleme Hoffman,
M. A. Diaz,
F. Garay,
Y. Chi,
X. He,
G. Pei,
S. Pei,
G. Shu,
X. Wang,
J. Zhang
, et al. (671 additional authors not shown)
Abstract:
The Compact Linear Collider (CLIC) is a TeV-scale high-luminosity linear $e^+e^-$ collider under development at CERN. Following the CLIC conceptual design published in 2012, this report provides an overview of the CLIC project, its current status, and future developments. It presents the CLIC physics potential and reports on design, technology, and implementation aspects of the accelerator and the…
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The Compact Linear Collider (CLIC) is a TeV-scale high-luminosity linear $e^+e^-$ collider under development at CERN. Following the CLIC conceptual design published in 2012, this report provides an overview of the CLIC project, its current status, and future developments. It presents the CLIC physics potential and reports on design, technology, and implementation aspects of the accelerator and the detector. CLIC is foreseen to be built and operated in stages, at centre-of-mass energies of 380 GeV, 1.5 TeV and 3 TeV, respectively. CLIC uses a two-beam acceleration scheme, in which 12 GHz accelerating structures are powered via a high-current drive beam. For the first stage, an alternative with X-band klystron powering is also considered. CLIC accelerator optimisation, technical developments and system tests have resulted in an increased energy efficiency (power around 170 MW) for the 380 GeV stage, together with a reduced cost estimate at the level of 6 billion CHF. The detector concept has been refined using improved software tools. Significant progress has been made on detector technology developments for the tracking and calorimetry systems. A wide range of CLIC physics studies has been conducted, both through full detector simulations and parametric studies, together providing a broad overview of the CLIC physics potential. Each of the three energy stages adds cornerstones of the full CLIC physics programme, such as Higgs width and couplings, top-quark properties, Higgs self-coupling, direct searches, and many precision electroweak measurements. The interpretation of the combined results gives crucial and accurate insight into new physics, largely complementary to LHC and HL-LHC. The construction of the first CLIC energy stage could start by 2026. First beams would be available by 2035, marking the beginning of a broad CLIC physics programme spanning 25-30 years.
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Submitted 6 May, 2019; v1 submitted 14 December, 2018;
originally announced December 2018.
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Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation
Authors:
John Anders,
Mathieu Benoit,
Saverio Braccini,
Raimon Casanova,
Hucheng Chen,
Kai Chen,
Francesco Armando di Bello,
Armin Fehr,
Didier Ferrere,
Dean Forshaw,
Tobias Golling,
Sergio Gonzalez-Sevilla,
Giuseppe Iacobucci,
Moritz Kiehn,
Francesco Lanni,
Hongbin Liu,
Lingxin Meng,
Claudia Merlassino,
Antonio Miucci,
Marzio Nessi,
Ivan Perić,
Marco Rimoldi,
D M S Sultan,
Mateus Vincente Barreto Pinto,
Eva Vilella
, et al. (4 additional authors not shown)
Abstract:
This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV Cyclotron at Bern Inselspital.
This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV Cyclotron at Bern Inselspital.
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Submitted 25 July, 2018;
originally announced July 2018.
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Test beam measurement of ams H35 HV-CMOS capacitively coupled pixel sensor prototypes with high-resistivity substrate
Authors:
M. Benoit,
S. Braccini,
R. Casanova,
E. Cavallaro,
H. Chen,
K. Chen,
F. A. Di Bello,
D. Ferrere,
D. Frizzell,
T. Golling,
S. Gonzalez-Sevilla,
S. Grinstein,
G. Iacobucci,
M. Kiehn,
F. Lanni,
H. Liu,
J. Metcalfe,
L. Meng,
C. Merlassino,
A. Miucci,
D. Muenstermann,
M. Nessi,
H. Okawa,
I. Perić,
M. Rimoldi
, et al. (12 additional authors not shown)
Abstract:
In the context of the studies of the ATLAS High Luminosity LHC programme, radiation tolerant pixel detectors in CMOS technologies are investigated. To evaluate the effects of substrate resistivity on CMOS sensor performance, the H35DEMO demonstrator, containing different diode and amplifier designs, was produced in ams H35 HV-CMOS technology using four different substrate resistivities spanning fr…
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In the context of the studies of the ATLAS High Luminosity LHC programme, radiation tolerant pixel detectors in CMOS technologies are investigated. To evaluate the effects of substrate resistivity on CMOS sensor performance, the H35DEMO demonstrator, containing different diode and amplifier designs, was produced in ams H35 HV-CMOS technology using four different substrate resistivities spanning from $\mathrm{80}$ to $\mathrm{1000~Ω\cdot cm}$. A glueing process using a high-precision flip-chip machine was developed in order to capacitively couple the sensors to FE-I4 Readout ASIC using a thin layer of epoxy glue with good uniformity over a large surface. The resulting assemblies were measured in beam test at the Fermilab Test Beam Facilities with 120 GeV protons and CERN SPS H8 beamline using 80 GeV pions. The in-time efficiency and tracking properties measured for the different sensor types are shown to be compatible with the ATLAS ITk requirements for its pixel sensors.
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Submitted 3 December, 2018; v1 submitted 22 December, 2017;
originally announced December 2017.
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First Production of New Thin 3D Sensors for HL-LHC at FBK
Authors:
DMS Sultan,
Gian-Franco Dalla Betta,
Roberto Mendicino,
Maurizio Boscardin,
Sabina Ronchin,
Nicola Zorzi
Abstract:
Owing to their intrinsic (geometry dependent) radiation hardness, 3D pixel sensors are promising candidates for the innermost tracking layers of the forthcoming experiment upgrades at the Phase 2 High-Luminosity LHC (HL-LHC). To this purpose, extreme radiation hardness up to the expected maximum fluence of 2e16 neq.cm-2 must come along with several technological improvements in a new generation of…
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Owing to their intrinsic (geometry dependent) radiation hardness, 3D pixel sensors are promising candidates for the innermost tracking layers of the forthcoming experiment upgrades at the Phase 2 High-Luminosity LHC (HL-LHC). To this purpose, extreme radiation hardness up to the expected maximum fluence of 2e16 neq.cm-2 must come along with several technological improvements in a new generation of 3D pixels, i.e., increased pixel granularity (50x50 or 25x100 um2 cell size), thinner active region (~100 um), narrower columnar electrodes (~5 um diameter) with reduced inter-electrode spacing (~30 um), and very slim edges (~100 um). The fabrication of the first batch of these new 3D sensors was recently completed at FBK on Si-Si direct wafer bonded 6-inch substrates. Initial electrical test results, performed at wafer level on sensors and test structures, highlighted very promising performance, in good agreement with TCAD simulations: low leakage current (<1 pA/column), intrinsic breakdown voltage of more than 150 V, capacitance of about 50 fF/column, thus assessing the validity of the design approach. A large variety of pixel sensors compatible with both existing (e.g., ATLAS FEI4 and CMS PSI46) and future (e.g., RD53) read-out chips were fabricated, that were also electrically tested on wafer using a temporary metal layer patterned as strips shorting rows of pixels together. This allowed a statistically significant distribution of the relevant electrical quantities to be obtained, thus gaining insight into the impact of process-induced defects. A few 3D strip test structures were irradiated with X-rays, showing inter-strip resistance of at least several GOhm even after 50 Mrad(Si) dose, thus proving the p-spray robustness. We present the most important design and technological aspects, and results obtained from the initial investigations.
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Submitted 2 December, 2016;
originally announced December 2016.
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The INFN-FBK Phase-2 R{\&}D Program
Authors:
Gian-Franco Dalla Betta,
Maurizio Boscardin,
Marco Bomben,
Mirko Brianzi,
Giovanni Calderini,
Giovanni Darbo,
Roberto Dell Orso,
Andrea Gaudiello,
Gabriele Giacomini,
Roberto Mendicino,
Marco Meschini,
Alberto Messineo,
Sabina Ronchin,
D M S Sultan,
Nicola Zorzi
Abstract:
We report on the 3-year INFN ATLAS-CMS joint research activity in collaboration with FBK, started in 2014, and aimed at the development of new thin pixel detectors for the High Luminosity LHC Phase-2 upgrades. The program is concerned with both 3D and planar active-edge pixel sensors to be made on 6-inch p-type wafers. The technology and the design will be optimized and qualified for extreme radia…
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We report on the 3-year INFN ATLAS-CMS joint research activity in collaboration with FBK, started in 2014, and aimed at the development of new thin pixel detectors for the High Luminosity LHC Phase-2 upgrades. The program is concerned with both 3D and planar active-edge pixel sensors to be made on 6-inch p-type wafers. The technology and the design will be optimized and qualified for extreme radiation hardness (2e16 neq cm-2). Pixel layouts compatible with present (for testing) and future (RD53 65nm) front-end chips of ATLAS and CMS are considered. The paper covers the main aspects of the research program, from the sensor design and fabrication technology, to the results of initial tests performed on the first prototypes.
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Submitted 2 December, 2016;
originally announced December 2016.
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Development of a new generation of 3D pixel sensors for HL-LHC
Authors:
Gian-Franco Dalla Betta,
Maurizio Boscardin,
Giovanni Darbo,
Roberto Mendicino,
Marco Meschini,
Alberto Messineo,
Sabina Ronchin,
DMS Sultan,
Nicola Zorzi
Abstract:
This paper covers the main technological and design aspects relevant to the development of a new generation of thin 3D pixel sensors with small pixel size aimed at the High-Luminosity LHC upgrades.
This paper covers the main technological and design aspects relevant to the development of a new generation of thin 3D pixel sensors with small pixel size aimed at the High-Luminosity LHC upgrades.
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Submitted 2 December, 2016;
originally announced December 2016.
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Development of New 3D Pixel Sensors for Phase 2 Upgrades at LHC
Authors:
Gian-Franco Dalla Betta,
Maurizio Boscardin,
Roberto Mendicino,
Sabina Ronchin,
DMS Sultan,
Nicola Zorzi
Abstract:
We report on the development of new 3D pixel sensors for the Phase 2 Upgrades at the High-Luminosity LHC (HL-LHC). To cope with the requirements of increased pixel granularity (e.g., 50x50 or 25x100 um2 pixel size) and extreme radiation hardness (up to a fluence of 2e16 neq cm-2), thinner 3D sensors (~100 um) with electrodes having narrower size (~ 5 um) and reduced spacing (~ 30 um) are considere…
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We report on the development of new 3D pixel sensors for the Phase 2 Upgrades at the High-Luminosity LHC (HL-LHC). To cope with the requirements of increased pixel granularity (e.g., 50x50 or 25x100 um2 pixel size) and extreme radiation hardness (up to a fluence of 2e16 neq cm-2), thinner 3D sensors (~100 um) with electrodes having narrower size (~ 5 um) and reduced spacing (~ 30 um) are considered. The paper covers TCAD simulations, as well as technological and design aspects relevant to the first batch of these 3D sensors, that is currently being fabricated at FBK on 6-inch wafers.
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Submitted 2 December, 2016;
originally announced December 2016.
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Temperature stability of intersubband transitions in AlN/GaN quantum wells
Authors:
Kristian Berland,
Martin Stattin,
Rashid Farivar,
D. M. S. Sultan,
Per Hyldgaard,
Anders Larsson,
Shu Min Wang,
Thorvald G. Andersson
Abstract:
Temperature dependence of intersubband transitions in AlN/GaN multiple quantum wells grown with molecular beam epitaxy is investigated both by absorption studies at different temperatures and modeling of conduction-band electrons. For the absorption study, the sample is heated in increments up to $400^\circ$C. The self-consistent Schrödinger-Poisson modeling includes temperature effects of the ban…
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Temperature dependence of intersubband transitions in AlN/GaN multiple quantum wells grown with molecular beam epitaxy is investigated both by absorption studies at different temperatures and modeling of conduction-band electrons. For the absorption study, the sample is heated in increments up to $400^\circ$C. The self-consistent Schrödinger-Poisson modeling includes temperature effects of the band-gap and the influence of thermal expansion on the piezoelectric field. We find that the intersubband absorption energy decreases only by $\sim 6$ meV at $400^\circ$C relative to its room temperature value.
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Submitted 6 October, 2010;
originally announced October 2010.
