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Imaging Hydrodynamic Electrons Flowing Without Landauer-Sharvin Resistance
Authors:
Chandan Kumar,
John Birkbeck,
Joseph A. Sulpizio,
David J. Perello,
Takashi Taniguchi,
Kenji Watanabe,
Oren Reuven,
Thomas Scaffidi,
Ady Stern,
Andre K. Geim,
Shahal Ilani
Abstract:
Electrical resistance usually originates from lattice imperfections. However, even a perfect lattice has a fundamental resistance limit, given by the Landauer conductance caused by a finite number of propagating electron modes. This resistance, shown by Sharvin to appear at the contacts of electronic devices, sets the ultimate conductance limit of non-interacting electrons. Recent years have seen…
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Electrical resistance usually originates from lattice imperfections. However, even a perfect lattice has a fundamental resistance limit, given by the Landauer conductance caused by a finite number of propagating electron modes. This resistance, shown by Sharvin to appear at the contacts of electronic devices, sets the ultimate conductance limit of non-interacting electrons. Recent years have seen growing evidence of hydrodynamic electronic phenomena, prompting recent theories to ask whether an electronic fluid can radically break the fundamental Landauer-Sharvin limit. Here, we use single-electron transistor imaging of electronic flow in high-mobility graphene Corbino disk devices to answer this question. First, by imaging ballistic flows at liquid-helium temperatures, we observe a Landauer-Sharvin resistance that does not appear at the contacts but is instead distributed throughout the bulk. This underpins the phase-space origin of this resistance - as emerging from spatial gradients in the number of conduction modes. At elevated temperatures, by identifying and accounting for electron-phonon scattering, we reveal the details of the purely hydrodynamic flow. Strikingly, we find that electron hydrodynamics eliminates the bulk Landuer-Sharvin resistance. Finally, by imaging spiraling magneto-hydrodynamic Corbino flows, we reveal the key emergent length scale predicted by hydrodynamic theories - the Gurzhi length. These observations demonstrate that electronic fluids can dramatically transcend the fundamental limitations of ballistic electrons, with important implications for fundamental science and future technologies
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Submitted 11 November, 2021;
originally announced November 2021.
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Visualizing Poiseuille flow of hydrodynamic electrons
Authors:
Joseph A. Sulpizio,
Lior Ella,
Asaf Rozen,
John Birkbeck,
David J. Perello,
Debarghya Dutta,
Moshe Ben-Shalom,
Takashi Taniguchi,
Kenji Watanabe,
Tobias Holder,
Raquel Queiroz,
Ady Stern,
Thomas Scaffidi,
Andre K. Geim,
Shahal Ilani
Abstract:
Hydrodynamics is a general description for the flow of a fluid, and is expected to hold even for fundamental particles such as electrons when inter-particle interactions dominate. While various aspects of electron hydrodynamics were revealed in recent experiments, the fundamental spatial structure of hydrodynamic electrons, the Poiseuille flow profile, has remained elusive. In this work, we provid…
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Hydrodynamics is a general description for the flow of a fluid, and is expected to hold even for fundamental particles such as electrons when inter-particle interactions dominate. While various aspects of electron hydrodynamics were revealed in recent experiments, the fundamental spatial structure of hydrodynamic electrons, the Poiseuille flow profile, has remained elusive. In this work, we provide the first real-space imaging of Poiseuille flow of an electronic fluid, as well as visualization of its evolution from ballistic flow. Utilizing a scanning nanotube single electron transistor, we image the Hall voltage of electronic flow through channels of high-mobility graphene. We find that the profile of the Hall field across the channel is a key physical quantity for distinguishing ballistic from hydrodynamic flow. We image the transition from flat, ballistic field profiles at low temperature into parabolic field profiles at elevated temperatures, which is the hallmark of Poiseuille flow. The curvature of the imaged profiles is qualitatively reproduced by Boltzmann calculations, which allow us to create a 'phase diagram' that characterizes the electron flow regimes. Our results provide long-sought, direct confirmation of Poiseuille flow in the solid state, and enable a new approach for exploring the rich physics of interacting electrons in real space.
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Submitted 28 May, 2019;
originally announced May 2019.
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Ballistic and hydrodynamic magnetotransport in narrow channels
Authors:
Tobias Holder,
Raquel Queiroz,
Thomas Scaffidi,
Navot Silberstein,
Asaf Rozen,
Joseph A. Sulpizio,
Lior Ella,
Shahal Ilani,
Ady Stern
Abstract:
An increasing number of low carrier density materials exhibit a surprisingly large transport mean free path due to inefficient momentum relaxation. Consequently, charge transport in these systems is markedly non-ohmic but rather ballistic or hydrodynamic, features which can be explored by driving current through narrow channels. Using a kinetic equation approach we theoretically investigate how a…
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An increasing number of low carrier density materials exhibit a surprisingly large transport mean free path due to inefficient momentum relaxation. Consequently, charge transport in these systems is markedly non-ohmic but rather ballistic or hydrodynamic, features which can be explored by driving current through narrow channels. Using a kinetic equation approach we theoretically investigate how a non-quantizing magnetic field discerns ballistic and hydrodynamic transport, in particular in the spatial dependence of the transverse electric field, $E_y$: We find that $E_y$ is locally enhanced when the flow exhibits a sharp directional anisotropy in the non-equilibrium density. As a consequence, at weak magnetic fields, the curvature of $E_y$ has opposite signs in the ballistic and hydrodynamic regimes. Moreover, we find a robust signature of the onset of non-local correlations in the form of distinctive peaks of the transverse field, which are accessible by local measurements. Our results demonstrate that a purely hydrodynamic approach is insufficient in the Gurzhi regime once a magnetic field is introduced.
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Submitted 9 March, 2020; v1 submitted 24 January, 2019;
originally announced January 2019.
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Simultaneous imaging of voltage and current density of flowing electrons in two dimensions
Authors:
Lior Ella,
Assaf Rozen,
John Birkbeck,
Moshe Ben-Shalom,
David Perello,
Johanna Zultak,
Takashi Taniguchi,
Kenji Watanabe,
Andre K. Geim,
Shahal Ilani,
Joseph A. Sulpizio
Abstract:
Electron transport in nanoscale devices can often result in nontrivial spatial patterns of voltage and current that reflect a variety of physical phenomena, particularly in nonlocal transport regimes. While numerous techniques have been devised to image electron flows, the need remains for a nanoscale probe capable of simultaneously imaging current and voltage distributions with high sensitivity a…
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Electron transport in nanoscale devices can often result in nontrivial spatial patterns of voltage and current that reflect a variety of physical phenomena, particularly in nonlocal transport regimes. While numerous techniques have been devised to image electron flows, the need remains for a nanoscale probe capable of simultaneously imaging current and voltage distributions with high sensitivity and minimal invasiveness, in magnetic field, across a broad range of temperatures, and beneath an insulating surface. Here we present such a technique for spatially map** electron flows based on a nanotube single-electron transistor, which achieves high sensitivity for both voltage and current imaging. In a series of experiments using high-mobility graphene devices, we demonstrate the ability of our technique to visualize local aspects of intrinsically nonlocal transport, as in ballistic flows, which are not easily resolvable via existing methods. This technique should both aid in understanding the physics of two-dimensional electronic devices, as well as enable new classes of experiments that image electron flow through buried nanostructures in the quantum and interaction-dominated regimes.
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Submitted 25 October, 2018;
originally announced October 2018.
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Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces via charge transfer induced modulation do**
Authors:
Y. Z. Chen,
F. Trier,
T. Wijnands,
R. J. Green,
N. Gauquelin,
R. Egoavil,
D. V. Christensen,
G. Koster,
M. Huijben,
N. Bovet,
S. Macke,
F. He,
R. Sutarto,
N. H. Andersen,
G. E. D. K. Prawiroatmodjo,
T. S. Jespersen,
J. A. Sulpizio,
M. Honig,
S. Linderoth,
S. Ilani,
J. Verbeeck,
G. Van Tendeloo,
G. Rijnders,
G. A. Sawatzky,
N. Pryds
Abstract:
The discovery of two-dimensional electron gases (2DEGs) at the interface between two insulating complex oxides, such as LaAlO3 (LAO) or gamma-Al2O3 (GAO) epitaxially grown on SrTiO3 (STO) 1,2, provides an opportunity for develo** all-oxide electronic devices3,4. These 2DEGs at complex oxide interfaces involve many-body interactions and give rise to a rich set of phenomena5, for example, supercon…
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The discovery of two-dimensional electron gases (2DEGs) at the interface between two insulating complex oxides, such as LaAlO3 (LAO) or gamma-Al2O3 (GAO) epitaxially grown on SrTiO3 (STO) 1,2, provides an opportunity for develo** all-oxide electronic devices3,4. These 2DEGs at complex oxide interfaces involve many-body interactions and give rise to a rich set of phenomena5, for example, superconductivity6, magnetism7,8, tunable metal-insulator transitions9, and phase separation10. However, large enhancement of the interfacial electron mobility remains a major and long-standing challenge for fundamental as well as applied research of complex oxides11-15. Here, we inserted a single unit cell insulating layer of polar La1-xSrxMnO3 (x=0, 1/8, and 1/3) at the interface between disordered LaAlO3 and crystalline SrTiO3 created at room temperature. We find that the electron mobility of the interfacial 2DEG is enhanced by more than two orders of magnitude. Our in-situ and resonant x-ray spectroscopic in addition to transmission electron microscopy results indicate that the manganite layer undergoes unambiguous electronic reconstruction and leads to modulation do** of such atomically engineered complex oxide heterointerfaces. At low temperatures, the modulation-doped 2DEG exhibits clear Shubnikov-de Haas oscillations and the initial manifestation of the quantum Hall effect, demonstrating an unprecedented high-mobility and low electron density oxide 2DEG system. These findings open new avenues for oxide electronics.
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Submitted 22 April, 2015;
originally announced April 2015.
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Nanoscale Phenomena in Oxide Heterostructures
Authors:
Joseph A. Sulpizio,
Shahal Ilani,
Patrick Irvin,
Jeremy Levy
Abstract:
Recent advances in creating complex oxide heterostructures, interfaces formed between two different transition metal oxides, have heralded a new era of materials and physics research, enabling a uniquely diverse set of coexisting physical properties to be combined with an ever- increasing degree of experimental control. Already, these systems have exhibited such varied phenomena as superconductivi…
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Recent advances in creating complex oxide heterostructures, interfaces formed between two different transition metal oxides, have heralded a new era of materials and physics research, enabling a uniquely diverse set of coexisting physical properties to be combined with an ever- increasing degree of experimental control. Already, these systems have exhibited such varied phenomena as superconductivity, magnetism, and ferroelasticity, all of which are gate-tunable, demonstrating their promise for fundamental discovery and technological innovation alike. To fully exploit this richness, it is necessary to understand and control the physics on the smallest scales, making the use of nanoscale probes essential. Using the prototypical LaAlO$_3$/SrTiO$_3$ interface as a guide, we explore the exciting developments in the physics of oxide-based heterostructures, with a focus on nanostructures and the nanoscale probes employed to unravel their complex behavior.
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Submitted 8 January, 2014;
originally announced January 2014.
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Local Electrostatic Imaging of Striped Domain Order in LaAlO3/SrTiO3
Authors:
Maayan Honig,
Joseph A. Sulpizio,
Jonathan Drori,
Arjun Joshua,
Eli Zeldov,
Shahal Ilani
Abstract:
The emerging field of complex oxide interfaces is generically built on one of the most celebrated substrates - strontium titanate (SrTiO3). This material hosts a range of phenomena, including ferroelasticity, incipient ferroelectricity, and most puzzlingly, contested giant piezoelectricity. Although these properties may markedly influence the oxide interfaces, especially on microscopic length scal…
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The emerging field of complex oxide interfaces is generically built on one of the most celebrated substrates - strontium titanate (SrTiO3). This material hosts a range of phenomena, including ferroelasticity, incipient ferroelectricity, and most puzzlingly, contested giant piezoelectricity. Although these properties may markedly influence the oxide interfaces, especially on microscopic length scales, the lack of local probes capable of studying such buried systems has left their effects largely unexplored. Here we use a scanning charge detector - a nanotube single-electron transistor - to noninvasively image the electrostatic landscape and local mechanical response in the prototypical LaAlO3/SrTiO3 system with unprecedented sensitivity. Our measurements reveal that on microscopic scales SrTiO3 exhibits large anomalous piezoelectricity with curious spatial dependence. Through electrostatic imaging we unravel the microscopic origin for this extrinsic piezoelectricity, demonstrating its direct, quantitative connection to the motion of locally ordered tetragonal domains under applied gate voltage. These domains create striped potential modulations that can markedly influence the two-dimensional electron system at the conducting interface. Our results have broad implications to all complex oxide interfaces built on SrTiO3 and demonstrate the importance of microscopic structure to the physics of electrons at the LaAlO3/SrTiO3 interface.
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Submitted 11 December, 2013;
originally announced December 2013.
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An integrated capacitance bridge for high-resolution, wide temperature range quantum capacitance measurements
Authors:
Joseph A. Sulpizio,
Arash Hazeghi,
Georgi Diankov,
David Goldhaber-Gordon,
H. -S. Philip Wong
Abstract:
We have developed a highly-sensitive integrated capacitance bridge for quantum capacitance measurements. Our bridge, based on a GaAs HEMT amplifier, delivers attofarad (aF) resolution using a small AC excitation at or below kT over a broad temperature range (4K-300K). We have achieved a resolution at room temperature of 10aF per root Hz for a 10mV AC excitation at 17.5 kHz, with improved resolutio…
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We have developed a highly-sensitive integrated capacitance bridge for quantum capacitance measurements. Our bridge, based on a GaAs HEMT amplifier, delivers attofarad (aF) resolution using a small AC excitation at or below kT over a broad temperature range (4K-300K). We have achieved a resolution at room temperature of 10aF per root Hz for a 10mV AC excitation at 17.5 kHz, with improved resolution at cryogenic temperatures, for the same excitation amplitude. We demonstrate the performance of our capacitance bridge by measuring the quantum capacitance of top-gated graphene devices and comparing against results obtained with the highest resolution commercially-available capacitance measurement bridge. Under identical test conditions, our bridge exceeds the resolution of the commercial tool by up to several orders of magnitude.
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Submitted 27 September, 2010;
originally announced September 2010.
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Observation of a One-Dimensional Spin-Orbit Gap in a Quantum Wire
Authors:
C. H. L. Quay,
T. L. Hughes,
J. A. Sulpizio,
L. N. Pfeiffer,
K. W. Baldwin,
K. W. West,
D. Goldhaber-Gordon,
R. de Picciotto
Abstract:
Understanding the flow of spins in magnetic layered structures has enabled an increase in data storage density in hard drives over the past decade of more than two orders of magnitude1. Following this remarkable success, the field of 'spintronics' or spin-based electronics is moving beyond effects based on local spin polarisation and is turning its attention to spin-orbit interaction (SOI) effec…
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Understanding the flow of spins in magnetic layered structures has enabled an increase in data storage density in hard drives over the past decade of more than two orders of magnitude1. Following this remarkable success, the field of 'spintronics' or spin-based electronics is moving beyond effects based on local spin polarisation and is turning its attention to spin-orbit interaction (SOI) effects, which hold promise for the production, detection and manipulation of spin currents, allowing coherent transmission of information within a device. While SOI-induced spin transport effects have been observed in two- and three-dimensional samples, these have been subtle and elusive, often detected only indirectly in electrical transport or else with more sophisticated techniques. Here we present the first observation of a predicted 'spin-orbit gap' in a one-dimensional sample, where counter-propagating spins, constituting a spin current, are accompanied by a clear signal in the easily-measured linear conductance of the system.
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Submitted 24 November, 2009; v1 submitted 23 November, 2009;
originally announced November 2009.
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Evidence of the role of contacts on the observed electron-hole asymmetry in graphene
Authors:
B. Huard,
N. Stander,
J. A. Sulpizio,
D. Goldhaber-Gordon
Abstract:
We perform electrical transport measurements in graphene with several sample geometries. In particular, we design ``invasive'' probes crossing the whole graphene sheet as well as ``external'' probes connected through graphene side arms. The four-probe conductance measured between external probes varies linearly with charge density and is symmetric between electron and hole types of carriers. In…
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We perform electrical transport measurements in graphene with several sample geometries. In particular, we design ``invasive'' probes crossing the whole graphene sheet as well as ``external'' probes connected through graphene side arms. The four-probe conductance measured between external probes varies linearly with charge density and is symmetric between electron and hole types of carriers. In contrast measurements with invasive probes give a strong electron-hole asymmetry and a sub-linear conductance as a function of density. By comparing various geometries and types of contact metal, we show that these two observations are due to transport properties of the metal/graphene interface. The asymmetry originates from the pinning of the charge density below the metal, which thereby forms a p-n or p-p junction depending on the polarity of the carriers in the bulk graphene sheet. Our results also explain part of the sub-linearity observed in conductance as a function of density in a large number of experiments on graphene, which has generally been attributed to short-range scattering only.
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Submitted 12 April, 2008;
originally announced April 2008.
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Transport measurements across a tunable potential barrier in graphene
Authors:
B. Huard,
J. A. Sulpizio,
N. Stander,
K. Todd,
B. Yang,
D. Goldhaber-Gordon
Abstract:
The peculiar nature of electron scattering in graphene is among many exciting theoretical predictions for the physical properties of this material. To investigate electron scattering properties in a graphene plane, we have created a gate-tunable potential barrier within a single-layer graphene sheet. We report measurements of electrical transport across this structure as the tunable barrier pote…
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The peculiar nature of electron scattering in graphene is among many exciting theoretical predictions for the physical properties of this material. To investigate electron scattering properties in a graphene plane, we have created a gate-tunable potential barrier within a single-layer graphene sheet. We report measurements of electrical transport across this structure as the tunable barrier potential is swept through a range of heights. When the barrier is sufficiently strong to form a bipolar junctions (npn or pnp) within the graphene sheet, the resistance across the barrier sharply increases. We compare these results to predictions for both diffusive and ballistic transport, as the barrier rises on a length scale comparable to the mean free path. Finally, we show how a magnetic field modifies transport across the barrier.
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Submitted 7 June, 2007; v1 submitted 19 April, 2007;
originally announced April 2007.
