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Isolation of individual Er quantum emitters in anatase TiO$_2$ on Si photonics
Authors:
Cheng Ji,
Robert M. Pettit,
Shobhit Gupta,
Gregory D. Grant,
Ignas Masiulionis,
Ananthesh Sundaresh,
Skylar Deckoff--Jones,
Max Olberding,
Manish K. Singh,
F. Joseph Heremans,
Supratik Guha,
Alan M. Dibos,
Sean E. Sullivan
Abstract:
Defects and dopant atoms in solid state materials are a promising platform for realizing single photon sources and quantum memories, which are the basic building blocks of quantum repeaters needed for long distance quantum networks. In particular, trivalent erbium (Er$^{3+}$) is of interest because it couples C-band telecom optical transitions with a spin-based memory platform. In order to produce…
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Defects and dopant atoms in solid state materials are a promising platform for realizing single photon sources and quantum memories, which are the basic building blocks of quantum repeaters needed for long distance quantum networks. In particular, trivalent erbium (Er$^{3+}$) is of interest because it couples C-band telecom optical transitions with a spin-based memory platform. In order to produce quantum repeaters at the scale required for a quantum internet, it is imperative to integrate these necessary building blocks with mature and scalable semiconductor processes. In this work, we demonstrate the optical isolation of single Er$^{3+}$ ions in CMOS-compatible titanium dioxide (TiO$_2$) thin films monolithically integrated on a silicon-on-insulator (SOI) photonics platform. Our results demonstrate a first step toward the realization of a monolithically integrated and scalable quantum photonics package based on Er$^{3+}$ doped thin films.
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Submitted 4 June, 2024;
originally announced June 2024.
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Optical and microstructural characterization of Er$^{3+}$ doped epitaxial cerium oxide on silicon
Authors:
Gregory D. Grant,
Jiefei Zhang,
Ignas Masiulionis,
Swarnabha Chattaraj,
Kathryn E. Sautter,
Sean E. Sullivan,
Rishi Chebrolu,
Yuzi Liu,
Jessica B. Martins,
Jens Niklas,
Alan M. Dibos,
Sumit Kewalramani,
John W. Freeland,
Jianguo Wen,
Oleg G. Poluektov,
F. Joseph Heremans,
David D. Awschalom,
Supratik Guha
Abstract:
Rare-earth ion dopants in solid-state hosts are ideal candidates for quantum communication technologies such as quantum memory, due to the intrinsic spin-photon interface of the rare-earth ion combined with the integration methods available in the solid-state. Erbium-doped cerium oxide (Er:CeO$_2$) is a particularly promising platform for such a quantum memory, as it combines the telecom-wavelengt…
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Rare-earth ion dopants in solid-state hosts are ideal candidates for quantum communication technologies such as quantum memory, due to the intrinsic spin-photon interface of the rare-earth ion combined with the integration methods available in the solid-state. Erbium-doped cerium oxide (Er:CeO$_2$) is a particularly promising platform for such a quantum memory, as it combines the telecom-wavelength (~1.5 $μ$m) 4f-4f transition of erbium, a predicted long electron spin coherence time supported by CeO$_2$, and is also near lattice-matched to silicon for heteroepitaxial growth. In this work, we report on the epitaxial growth of Er:CeO$_2$ thin films on silicon using molecular beam epitaxy (MBE), with controlled erbium concentration down to 2 parts per million (ppm). We carry out a detailed microstructural study to verify the CeO$_2$ host structure, and characterize the spin and optical properties of the embedded Er$^{3+}$ ions. In the 2-3 ppm Er regime, we identify EPR linewidths of 245(1) MHz, optical inhomogeneous linewidths of 9.5(2) GHz, optical excited state lifetimes of 3.5(1) ms, and spectral diffusion-limited homogenoeus linewidths as narrow as 4.8(3) MHz in the as-grown material. We test annealing of the Er:CeO$_2$ films up to 900 deg C, which yields modest narrowing of the inhomogeneous linewidth by 20% and extension of the excited state lifetime by 40%. We have also studied the variation of the optical properties as a function of Er do** and find that the results are consistent with the trends expected from inter-dopant charge interactions.
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Submitted 28 September, 2023;
originally announced September 2023.
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Anomalous Purcell decay of strongly driven inhomogeneous emitters coupled to a cavity
Authors:
Michael T. Solomon,
Martin Koppenhöfer,
Mikhail Mamaev,
Cheng Ji,
Gregory Grant,
Ignas Masiulionis,
Sean E. Sullivan,
F. Joseph Heremans,
Supratik Guha,
David D. Awschalom,
Aashish A. Clerk,
Alan M. Dibos
Abstract:
We perform resonant fluorescence lifetime measurements on a nanocavity-coupled erbium ensemble as a function of cavity-laser detuning and pump power. Our measurements reveal an anomalous three-fold suppression of the ensemble Purcell factor at zero cavity detuning and high pump fluence. We capture qualitative aspects of this decay rate suppression using a Tavis-Cummings model of non-interacting sp…
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We perform resonant fluorescence lifetime measurements on a nanocavity-coupled erbium ensemble as a function of cavity-laser detuning and pump power. Our measurements reveal an anomalous three-fold suppression of the ensemble Purcell factor at zero cavity detuning and high pump fluence. We capture qualitative aspects of this decay rate suppression using a Tavis-Cummings model of non-interacting spins coupled to a common cavity.
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Submitted 7 March, 2024; v1 submitted 28 September, 2023;
originally announced September 2023.
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Nanocavity-mediated Purcell enhancement of Er in TiO$_2$ thin films grown via atomic layer deposition
Authors:
Cheng Ji,
Michael T. Solomon,
Gregory D. Grant,
Koichi Tanaka,
Muchuan Hua,
Jianguo Wen,
Sagar K. Seth,
Connor P. Horn,
Ignas Masiulionis,
Manish K. Singh,
Sean E. Sullivan,
F. Joseph Heremans,
David D. Awschalom,
Supratik Guha,
Alan M. Dibos
Abstract:
The use of trivalent erbium (Er$^{3+}$), typically embedded as an atomic defect in the solid-state, has widespread adoption as a dopant in telecommunications devices and shows promise as a spin-based quantum memory for quantum communication. In particular, its natural telecom C-band optical transition and spin-photon interface makes it an ideal candidate for integration into existing optical fiber…
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The use of trivalent erbium (Er$^{3+}$), typically embedded as an atomic defect in the solid-state, has widespread adoption as a dopant in telecommunications devices and shows promise as a spin-based quantum memory for quantum communication. In particular, its natural telecom C-band optical transition and spin-photon interface makes it an ideal candidate for integration into existing optical fiber networks without the need for quantum frequency conversion. However, successful scaling requires a host material with few intrinsic nuclear spins, compatibility with semiconductor foundry processes, and straightforward integration with silicon photonics. Here, we present Er-doped titanium dioxide (TiO$_2$) thin film growth on silicon substrates using a foundry-scalable atomic layer deposition process with a wide range of do** control over the Er concentration. Even though the as-grown films are amorphous, after oxygen annealing they exhibit relatively large crystalline grains, and the embedded Er ions exhibit the characteristic optical emission spectrum from anatase TiO$_2$. Critically, this growth and annealing process maintains the low surface roughness required for nanophotonic integration. Finally, we interface Er ensembles with high quality factor Si nanophotonic cavities via evanescent coupling and demonstrate a large Purcell enhancement (300) of their optical lifetime. Our findings demonstrate a low-temperature, non-destructive, and substrate-independent process for integrating Er-doped materials with silicon photonics. At high do** densities this platform can enable integrated photonic components such as on-chip amplifiers and lasers, while dilute concentrations can realize single ion quantum memories.
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Submitted 23 September, 2023;
originally announced September 2023.
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Quasi-deterministic Localization of Er Emitters in Thin Film TiO$_2$ through Submicron-scale Crystalline Phase Control
Authors:
Sean E. Sullivan,
Jonghoon Ahn,
Tao Zhou,
Preetha Saha,
Martin V. Holt,
Supratik Guha,
F. J. Heremans,
Manish Kumar Singh
Abstract:
With their shielded 4f orbitals, rare-earth ions (REIs) offer optical and electron spin transitions with good coherence properties even when embedded in a host crystal matrix, highlighting their utility as promising quantum emitters and memories for quantum information processing. Among REIs, trivalent erbium (Er$^{3+}$) uniquely has an optical transition in the telecom C-band, ideal for transmiss…
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With their shielded 4f orbitals, rare-earth ions (REIs) offer optical and electron spin transitions with good coherence properties even when embedded in a host crystal matrix, highlighting their utility as promising quantum emitters and memories for quantum information processing. Among REIs, trivalent erbium (Er$^{3+}$) uniquely has an optical transition in the telecom C-band, ideal for transmission over optical fibers, and making it well-suited for applications in quantum communication. The deployment of Er$^{3+}$ emitters into a thin film TiO$_2$ platform has been a promising step towards scalable integration; however, like many solid-state systems, the deterministic spatial placement of quantum emitters remains an open challenge. We investigate laser annealing as a means to locally tune the optical resonance of Er$^{3+}$ emitters in TiO$_2$ thin films on Si. Using both nanoscale X-ray diffraction measurements and cryogenic photoluminescence spectroscopy, we show that tightly focused below-gap laser annealing can induce anatase to rutile phase transitions in a nearly diffraction-limited area of the films and improve local crystallinity through grain growth. As a percentage of the Er:TiO$_2$ is converted to rutile, the Er$^{3+}$ optical transition blueshifts by 13 nm. We explore the effects of changing laser annealing time and show that the amount of optically active Er:rutile increases linearly with laser power. We additionally demonstrate local phase conversion on microfabricated Si structures, which holds significance for quantum photonics.
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Submitted 28 August, 2023;
originally announced August 2023.
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Magnon-mediated qubit coupling determined via dissipation measurements
Authors:
Masaya Fukami,
Jonathan C. Marcks,
Denis R. Candido,
Leah R. Weiss,
Benjamin Soloway,
Sean E. Sullivan,
Nazar Delegan,
F. Joseph Heremans,
Michael E. Flatté,
David D. Awschalom
Abstract:
Controlled interaction between localized and delocalized solid-state spin systems offers a compelling platform for on-chip quantum information processing with quantum spintronics. Hybrid quantum systems (HQSs) of localized nitrogen-vacancy (NV) centers in diamond and delocalized magnon modes in ferrimagnets-systems with naturally commensurate energies-have recently attracted significant attention,…
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Controlled interaction between localized and delocalized solid-state spin systems offers a compelling platform for on-chip quantum information processing with quantum spintronics. Hybrid quantum systems (HQSs) of localized nitrogen-vacancy (NV) centers in diamond and delocalized magnon modes in ferrimagnets-systems with naturally commensurate energies-have recently attracted significant attention, especially for interconnecting isolated spin qubits at length-scales far beyond those set by the dipolar coupling. However, despite extensive theoretical efforts, there is a lack of experimental characterization of the magnon-mediated interaction between NV centers, which is necessary to develop such hybrid quantum architectures. Here, we experimentally determine the magnon-mediated NV-NV coupling from the magnon-induced self-energy of NV centers. Our results are quantitatively consistent with a model in which the NV center is coupled to magnons by dipolar interactions. This work provides a versatile tool to characterize HQSs in the absence of strong coupling, informing future efforts to engineer entangled solid-state systems.
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Submitted 22 August, 2023;
originally announced August 2023.
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A perspective on the pathway to a scalable quantum internet using rare-earth ions
Authors:
Robert M. Pettit,
Farhang Hadad Farshi,
Sean E. Sullivan,
Álvaro Véliz-Osorio,
Manish Kumar Singh
Abstract:
The ultimate realization of a global quantum internet will require advances in scalable technologies capable of generating, storing, and manipulating quantum information. The essential devices that will perform these tasks in a quantum network are quantum repeaters, which will enable the long-range distribution of entanglement between distant network nodes. In this perspective, we provide an overv…
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The ultimate realization of a global quantum internet will require advances in scalable technologies capable of generating, storing, and manipulating quantum information. The essential devices that will perform these tasks in a quantum network are quantum repeaters, which will enable the long-range distribution of entanglement between distant network nodes. In this perspective, we provide an overview of the primary functions of a quantum repeater and discuss progress that has been made toward the development of repeaters with rare-earth ion doped materials while noting challenges that are being faced as the technologies mature. We give particular attention to erbium, which is well suited for networking applications. Finally, we provide a discussion of near-term benchmarks that can further guide rare-earth ion platforms for impact in near-term quantum networks.
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Submitted 3 May, 2023; v1 submitted 14 April, 2023;
originally announced April 2023.
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Frequency-dependent Phonon-mediated Unidirectional Magnetoresistance in a Metal on an Insulator with Highly Nonequilibrium Magnons
Authors:
Sean E. Sullivan,
Hwijong Lee,
Annie Weathers,
Li Shi
Abstract:
Heavy metal (HM)/magnet bilayers host many magnetoresistances (MR) and spin caloritronic effects. Here we show that the spin Peltier effect and electron-phonon scattering produce much larger unidirectional MR of an HM on a magnetic insulator than existing theories that neglect the interplay between MR and spin caloritronic effects. By accounting for local nonequilibrium in both the magnon chemical…
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Heavy metal (HM)/magnet bilayers host many magnetoresistances (MR) and spin caloritronic effects. Here we show that the spin Peltier effect and electron-phonon scattering produce much larger unidirectional MR of an HM on a magnetic insulator than existing theories that neglect the interplay between MR and spin caloritronic effects. By accounting for local nonequilibrium in both the magnon chemical potential and temperature, our analytical model attributes the observed frequency dependence of the spin Peltier MR and the spin Seebeck effect to the reduction of the thermal penetration depth, which approaches the 1 micron scale magnon spin diffusion length at high frequencies.
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Submitted 5 August, 2022;
originally announced August 2022.
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A differentiable forward model for the concurrent, multi-peak Bragg coherent x-ray diffraction imaging problem
Authors:
S. Maddali,
T. D. Frazer,
N. Delegan,
K. J. Harmon,
S. E. Sullivan,
M. Allain,
W. Cha,
A. Dibos,
I. Poudyal,
S. Kandel,
Y. S. G. Nashed,
F. J. Heremans,
H. You,
Y. Cao,
S. O. Hruszkewycz
Abstract:
We present a general analytic approach to spatially resolve the nano-scale lattice distortion field of strained and defected compact crystals with Bragg coherent x-ray diffraction imaging (BCDI). Our approach relies on fitting a differentiable forward model simultaneously to multiple BCDI datasets corresponding to independent Bragg reflections from the same single crystal. It is designed to be fai…
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We present a general analytic approach to spatially resolve the nano-scale lattice distortion field of strained and defected compact crystals with Bragg coherent x-ray diffraction imaging (BCDI). Our approach relies on fitting a differentiable forward model simultaneously to multiple BCDI datasets corresponding to independent Bragg reflections from the same single crystal. It is designed to be faithful to heterogeneities that potentially manifest as phase discontinuities in the coherently diffracted wave, such as lattice dislocations in an imperfect crystal. We retain fidelity to such small features in the reconstruction process through a Fourier transform -based resampling algorithm designed to largely avoid the point spread tendencies of commonly employed interpolation methods. The reconstruction model defined in this manner brings BCDI reconstruction into the scope of explicit optimization driven by automatic differentiation. With results from simulations and experimental diffraction data, we demonstrate significant improvement in the final image quality compared to conventional phase retrieval, enabled by explicitly coupling multiple BCDI datasets into the reconstruction loss function.
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Submitted 1 August, 2022;
originally announced August 2022.
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Effects of hot phonons and thermal stress in micro-Raman spectra of molybdenum disulphide
Authors:
Peter Sokalski,
Zherui Han,
Gabriella Coloyan Fleming,
Brandon Smith,
Sean E. Sullivan,
Rui Huang,
Xiulin Ruan,
Li Shi
Abstract:
Micro-Raman spectroscopy has become an important tool in probing thermophysical behavior in emerging functional materials such as two-dimensional (2D) layered structures. Localized heating by the focused Raman excitation laser beam is expected to produce both stress and nonequilibrium temperature distributions in the material. Here we investigate the effects of hot optical phonons in the Raman spe…
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Micro-Raman spectroscopy has become an important tool in probing thermophysical behavior in emerging functional materials such as two-dimensional (2D) layered structures. Localized heating by the focused Raman excitation laser beam is expected to produce both stress and nonequilibrium temperature distributions in the material. Here we investigate the effects of hot optical phonons in the Raman spectra of molybdenum disulphide (MoS2) and distinguish them from those caused by thermally-induced compressive stress, which causes a Raman frequency blue shift in the focused Raman laser spot. With the stress effect accounted for in micro-Raman measurements, the degree of nonequilibrium between the hot optical phonons and the acoustic phonon bath is found to be much smaller than those observed in prior micro-Raman measurements of suspended graphene. The observation agrees with a first-principles based theoretical prediction of overpopulated zone-center optical phonons compared to other optical phonons in the Brillouin zone and acoustic phonons. The findings provide detailed insight into the energy relaxation processes in this emerging 2D transition metal dichalcogenide (TMD) electronic and optoelectronic material and clarify an important question in micro-Raman measurements of thermal transport in this and other 2D materials.
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Submitted 9 November, 2022; v1 submitted 30 June, 2022;
originally announced June 2022.
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Purcell enhancement of erbium ions in TiO$_{2}$ on silicon nanocavities
Authors:
Alan M. Dibos,
Michael T. Solomon,
Sean E. Sullivan,
Manish K. Singh,
Kathryn E. Sautter,
Connor P. Horn,
Gregory D. Grant,
Yulin Lin,
Jianguo Wen,
F. Joseph Heremans,
Supratik Guha,
David D. Awschalom
Abstract:
Isolated solid-state atomic defects with telecom optical transitions are ideal quantum photon emitters and spin qubits for applications in long-distance quantum communication networks. Prototypical telecom defects such as erbium suffer from poor photon emission rates, requiring photonic enhancement using resonant optical cavities. Many of the traditional hosts for erbium ions are not amenable to d…
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Isolated solid-state atomic defects with telecom optical transitions are ideal quantum photon emitters and spin qubits for applications in long-distance quantum communication networks. Prototypical telecom defects such as erbium suffer from poor photon emission rates, requiring photonic enhancement using resonant optical cavities. Many of the traditional hosts for erbium ions are not amenable to direct incorporation with existing integrated photonics platforms, limiting scalable fabrication of qubit-based devices. Here we present a scalable approach towards CMOS-compatible telecom qubits by using erbium-doped titanium dioxide thin films grown atop silicon-on-insulator substrates. From this heterostructure, we have fabricated one-dimensional photonic crystal cavities demonstrating quality factors in excess of $5\times10^{4}$ and corresponding Purcell-enhanced optical emission rates of the erbium ensembles in excess of 200. This easily fabricated materials platform represents an important step towards realizing telecom quantum memories in a scalable qubit architecture compatible with mature silicon technologies.
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Submitted 20 April, 2022;
originally announced April 2022.
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Development of a Scalable Quantum Memory Platform -- Materials Science of Erbium-Doped TiO$_2$ Thin Films on Silicon
Authors:
Manish Kumar Singh,
Gary Wolfowicz,
Jianguo Wen,
Sean E. Sullivan,
Abhinav Prakash,
Alan M. Dibos,
David D. Awschalom,
F. Joseph Heremans,
Supratik Guha
Abstract:
Rare-earth ions (REI) have emerged as an attractive candidate for solid-state qubits, particularly as a quantum memory. Their 4f-4f transitions are shielded by filled 5s and 5p orbitals, offering a degree of protection from external electric fields. Embedded within a thin film oxide host, REIs could enable a qubit platform with significant memory capabilities. Furthermore, a silicon-compatible thi…
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Rare-earth ions (REI) have emerged as an attractive candidate for solid-state qubits, particularly as a quantum memory. Their 4f-4f transitions are shielded by filled 5s and 5p orbitals, offering a degree of protection from external electric fields. Embedded within a thin film oxide host, REIs could enable a qubit platform with significant memory capabilities. Furthermore, a silicon-compatible thin film form factor would enable the use of standard semiconductor fabrication processes to achieve chip-based integrability and scalability for functional quantum networks. Towards this goal, we have carried out optical and microstructural studies of erbium-doped polycrystalline and epitaxial TiO$_2$ thin films on Si (100), r-sapphire, and SrTiO$_3$ (100). We observe that the inhomogeneous optical linewidth of the Er photoluminescence is comparable or better for polycrystalline Er:TiO$_2$(grown on Si) in comparison to single crystal epitaxial films on sapphire or SrTiO$_3$, implying a relative insensitivity to extended defects. We investigated the effect of the film/substrate and film/air interface and found that the inhomogeneous linewidth and spectral diffusion can be significantly improved via bottom buffer and top cap** layers of undoped TiO$_2$. Using such approaches, we obtain inhomogeneous linewidths of 5.2 GHz and spectral diffusion of 180 MHz in Er:TiO$_2$ /Si(100) films and have demonstrated the engineerability of quantum-relevant properties in these thin films.
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Submitted 27 February, 2022; v1 submitted 10 February, 2022;
originally announced February 2022.
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Raman Linewidth Contributions from Four-Phonon and Electron-Phonon Interactions in Graphene
Authors:
Zherui Han,
Xiaolong Yang,
Sean E. Sullivan,
Tianli Feng,
Li Shi,
Wu Li,
Xiulin Ruan
Abstract:
The Raman peak position and linewidth provide insight into phonon anharmonicity and electron-phonon interactions (EPI) in materials. For monolayer graphene, prior first-principles calculations have yielded decreasing linewidth with increasing temperature, which is opposite to measurement results. Here, we explicitly consider four-phonon anharmonicity, phonon renormalization, and electron-phonon co…
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The Raman peak position and linewidth provide insight into phonon anharmonicity and electron-phonon interactions (EPI) in materials. For monolayer graphene, prior first-principles calculations have yielded decreasing linewidth with increasing temperature, which is opposite to measurement results. Here, we explicitly consider four-phonon anharmonicity, phonon renormalization, and electron-phonon coupling, and find all to be important to successfully explain both the $G$ peak frequency shift and linewidths in our suspended graphene sample at a wide temperature range. Four-phonon scattering contributes a prominent linewidth that increases with temperature, while temperature dependence from EPI is found to be reversed above a do** threshold ($\hbarω_G/2$, with $ω_G$ being the frequency of the $G$ phonon).
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Submitted 1 July, 2021; v1 submitted 25 June, 2021;
originally announced June 2021.
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Photoluminescence spectra of point defects in semiconductors: validation of first principles calculations
Authors:
Yu **,
Marco Govoni,
Gary Wolfowicz,
Sean E. Sullivan,
F. Joseph Heremans,
David D. Awschalom,
Giulia Galli
Abstract:
Optically and magnetically active point defects in semiconductors are interesting platforms for the development of solid-state quantum technologies. Their optical properties are usually probed by measuring photoluminescence spectra, which provide information on excitation energies and on the interaction of electrons with lattice vibrations. We present a combined computational and experimental stud…
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Optically and magnetically active point defects in semiconductors are interesting platforms for the development of solid-state quantum technologies. Their optical properties are usually probed by measuring photoluminescence spectra, which provide information on excitation energies and on the interaction of electrons with lattice vibrations. We present a combined computational and experimental study of photoluminescence spectra of defects in diamond and SiC, aimed at assessing the validity of theoretical and numerical approximations used in first principles calculations, including the use of the Franck-Condon principle and the displaced harmonic oscillator approximation. We focus on prototypical examples of solid-state qubits, the divacancy centers in SiC and the nitrogen-vacancy in diamond, and we report computed photoluminescence spectra as a function of temperature that are in very good agreement with the measured ones. As expected we find that the use of hybrid functionals leads to more accurate results than semilocal functionals. Interestingly our calculations show that constrained density functional theory (CDFT) and time-dependent hybrid DFT perform equally well in describing the excited state potential energy surface of triplet states; our findings indicate that CDFT, a relatively cheap computational approach, is sufficiently accurate for the calculations of photoluminescence spectra of the defects studied here. Finally, we find that only by correcting for finite-size effects and extrapolating to the dilute limit, one can obtain a good agreement between theory and experiment. Our results provide a detailed validation protocol of first principles calculations of photoluminescence spectra, necessary both for the interpretation of experiments and for robust predictions of the electronic properties of point defects in semiconductors.
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Submitted 9 August, 2021; v1 submitted 16 June, 2021;
originally announced June 2021.
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Quantum engineering with hybrid magnonics systems and materials
Authors:
D. D. Awschalom,
C. H. R. Du,
R. He,
F. J. Heremans,
A. Hoffmann,
J. T. Hou,
H. Kurebayashi,
Y. Li,
L. Liu,
V. Novosad,
J. Sklenar,
S. E. Sullivan,
D. Sun,
H. Tang,
V. Tiberkevich,
C. Trevillian,
A. W. Tsen,
L. R. Weiss,
W. Zhang,
X. Zhang,
L. Zhao,
C. W. Zollitsch
Abstract:
Quantum technology has made tremendous strides over the past two decades with remarkable advances in materials engineering, circuit design and dynamic operation. In particular, the integration of different quantum modules has benefited from hybrid quantum systems, which provide an important pathway for harnessing the different natural advantages of complementary quantum systems and for engineering…
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Quantum technology has made tremendous strides over the past two decades with remarkable advances in materials engineering, circuit design and dynamic operation. In particular, the integration of different quantum modules has benefited from hybrid quantum systems, which provide an important pathway for harnessing the different natural advantages of complementary quantum systems and for engineering new functionalities. This review focuses on the current frontiers with respect to utilizing magnetic excitatons or magnons for novel quantum functionality. Magnons are the fundamental excitations of magnetically ordered solid-state materials and provide great tunability and flexibility for interacting with various quantum modules for integration in diverse quantum systems. The concomitant rich variety of physics and material selections enable exploration of novel quantum phenomena in materials science and engineering. In addition, the relative ease of generating strong coupling and forming hybrid dynamic systems with other excitations makes hybrid magnonics a unique platform for quantum engineering. We start our discussion with circuit-based hybrid magnonic systems, which are coupled with microwave photons and acoustic phonons. Subsequently, we are focusing on the recent progress of magnon-magnon coupling within confined magnetic systems. Next we highlight new opportunities for understanding the interactions between magnons and nitrogen-vacancy centers for quantum sensing and implementing quantum interconnects. Lastly, we focus on the spin excitations and magnon spectra of novel quantum materials investigated with advanced optical characterization.
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Submitted 5 February, 2021;
originally announced February 2021.
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Generalized scaling of spin qubit coherence in over 12,000 host materials
Authors:
Shun Kanai,
F. Joseph Heremans,
Hosung Seo,
Gary Wolfowicz,
Christopher P. Anderson,
Sean E. Sullivan,
Giulia Galli,
David D. Awschalom,
Hideo Ohno
Abstract:
Spin defect centers with long quantum coherence times ($T_2$) are key solid-state platforms for a variety of quantum applications. Recently, cluster correlation expansion (CCE) techniques have emerged as a powerful tool to simulate the $T_2$ of defect electron spins in these solid-state systems with good accuracy. Here, based on CCE, we uncover an algebraic expression for $T_2$ generalized for hos…
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Spin defect centers with long quantum coherence times ($T_2$) are key solid-state platforms for a variety of quantum applications. Recently, cluster correlation expansion (CCE) techniques have emerged as a powerful tool to simulate the $T_2$ of defect electron spins in these solid-state systems with good accuracy. Here, based on CCE, we uncover an algebraic expression for $T_2$ generalized for host compounds with dilute nuclear spin baths, which enables a quantitative and comprehensive materials exploration with a near instantaneous estimate of the coherence. We investigate more than 12,000 host compounds at natural isotopic abundance, and find that silicon carbide (SiC), a prominent widegap semiconductor for quantum applications, possesses the longest coherence times among widegap non-chalcogenides. In addition, more than 700 chalcogenides are shown to possess a longer $T_2$ than SiC. We suggest new potential host compounds with promisingly long $T_2$ up to 47 ms, and pave the way to explore unprecedented functional materials for quantum applications.
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Submitted 4 February, 2021;
originally announced February 2021.
