Interplay between carrier and impurity concentrations in annealed Ga$_{1-x}$Mn$_{x}$As intrinsic anomalous Hall Effect
Authors:
S. H. Chun,
Y. S. Kim,
H. K. Choi,
I. T. Jeong,
W. O. Lee,
K. S. Suh,
Y. S. OH,
K. H. Kim,
Z. G. Khim,
J. C. Woo,
Y. D. Park
Abstract:
Investigating the scaling behavior of annealed Ga$_{1-x}$Mn$_{x}$As anomalous Hall coefficients, we note a universal crossover regime where the scaling behavior changes from quadratic to linear, attributed to the anomalous Hall Effect intrinsic and extrinsic origins, respectively. Furthermore, measured anomalous Hall conductivities when properly scaled by carrier concentration remain constant, e…
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Investigating the scaling behavior of annealed Ga$_{1-x}$Mn$_{x}$As anomalous Hall coefficients, we note a universal crossover regime where the scaling behavior changes from quadratic to linear, attributed to the anomalous Hall Effect intrinsic and extrinsic origins, respectively. Furthermore, measured anomalous Hall conductivities when properly scaled by carrier concentration remain constant, equal to theoretically predicated values, spanning nearly a decade in conductivity as well as over 100 K in T$_{C}$. Both the qualitative and quantitative agreement confirms the validity of new equations of motion including the Berry phase contributions as well as tunablility of the intrinsic anomalous Hall Effect.
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Submitted 30 March, 2006;
originally announced March 2006.
Carrier-mediated ferromagnetic ordering in Mn ion-implanted p+GaAs:C
Authors:
Y. D. Park,
J. D. Lim,
K. S. Suh,
S. B. Shim,
J. S. Lee,
C. R. Abernathy,
S. J. Pearton,
Y. S. Kim,
Z. G. Khim,
R. G. Wilson
Abstract:
Highly p-type GaAs:C was ion-implanted with Mn at differing doses to produce Mn concentrations in the 1 - 5 at.% range. In comparison to LT-GaAs and n+GaAs:Si samples implanted under the same conditions, transport and magnetic properties show marked differences. Transport measurements show anomalies, consistent with observed magnetic properties and with epi- LT-(Ga,Mn)As, as well as the extraord…
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Highly p-type GaAs:C was ion-implanted with Mn at differing doses to produce Mn concentrations in the 1 - 5 at.% range. In comparison to LT-GaAs and n+GaAs:Si samples implanted under the same conditions, transport and magnetic properties show marked differences. Transport measurements show anomalies, consistent with observed magnetic properties and with epi- LT-(Ga,Mn)As, as well as the extraordinary Hall Effect up to the observed magnetic ordering temperature (T_C). Mn ion-implanted p+GaAs:C with as-grown carrier concentrations > 10^20 cm^-3 show remanent magnetization up to 280 K.
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Submitted 11 August, 2003;
originally announced August 2003.
