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Coexistence of Anomalous Hall Effect and Weak Net Magnetization in Collinear Antiferromagnet MnTe
Authors:
K. P. Kluczyk,
K. Gas,
M. J. Grzybowski,
P. Skupiński,
M. A. Borysiewicz,
T. Fąs,
J. Suffczyński,
J. Z. Domagala,
K. Grasza,
A. Mycielski,
M. Baj,
K. H. Ahn,
K. Výborný,
M. Sawicki,
M. Gryglas-Borysiewicz
Abstract:
Anomalous Hall effect (AHE) plays important role in the rapidly develo** field of antiferromagnetic spintronics. It has been recently discussed that it can be a feature of not only uncompensated magnetic systems but also in altermagnetic materials. Hexagonal MnTe belongs to this appealing group of compounds exhibiting AHE and is commonly perceived as magnetically compensated. Here, we demonstrat…
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Anomalous Hall effect (AHE) plays important role in the rapidly develo** field of antiferromagnetic spintronics. It has been recently discussed that it can be a feature of not only uncompensated magnetic systems but also in altermagnetic materials. Hexagonal MnTe belongs to this appealing group of compounds exhibiting AHE and is commonly perceived as magnetically compensated. Here, we demonstrate that bulk form of MnTe exhibits small but detectable magnetic moment correlating with hysteretic behaviour of the AHE. We formulate a phenomenological model which explains how this feature allows to create a disbalance between states with opposite Néel vector and prevent the AHE signal from averaging out to zero. Moreover, we show how the dependence of AHE on the Néel vector arises on microscopical level and highlight the differences in Berry curvature between magnetically compensated and uncompensated systems.
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Submitted 13 October, 2023;
originally announced October 2023.
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Wurtzite vs rock-salt MnSe epitaxy: electronic and altermagnetic properties
Authors:
Michał J. Grzybowski,
Carmine Autieri,
Jarosław Domagała,
Cezary Krasucki,
Anna Kaleta,
Sławomir Kret,
Katarzyna Gas,
Maciej Sawicki,
Rafał Bożek,
Jan Suffczyński,
Wojciech Pacuski
Abstract:
Newly discovered altermagnets are magnetic materials exhibiting both compensated magnetic order, similar to antiferromagnets, and simultaneous non-relativistic spin-splitting of the bands, akin to ferromagnets. This characteristic arises from the specific symmetry operations that connect the spin sublattices. In this report, we show with ab initio calculations that the semiconductive MnSe exhibits…
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Newly discovered altermagnets are magnetic materials exhibiting both compensated magnetic order, similar to antiferromagnets, and simultaneous non-relativistic spin-splitting of the bands, akin to ferromagnets. This characteristic arises from the specific symmetry operations that connect the spin sublattices. In this report, we show with ab initio calculations that the semiconductive MnSe exhibits altermagnetic spin-splitting in the wurtzite phase as well as a critical temperature well above room temperature. It is the first material from such space group identified to possess altermagnetic properties. Furthermore, we demonstrate experimentally through structural characterization techniques that it is possible to obtain thin films of both the intriguing wurtzite phase of MnSe and the more common rock-salt MnSe using molecular beam epitaxy on GaAs substrates. The choice of buffer layers plays a crucial role in determining the resulting phase and consequently extends the array of materials available for the physics of altermagnetism.
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Submitted 13 September, 2023; v1 submitted 12 September, 2023;
originally announced September 2023.
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Erbium-based multifuncional compounds as molecular microkelvin-tunable driving-sensing units
Authors:
Jarosław Rybusiński,
Tomasz Fąs,
Pablo Martin-Ramos,
Victor Lavín,
Jacek Szczytko,
Jan Suffczyński,
Inocencio R. Martín,
Jesus Martin-Gil,
Manuela Ramos Silva,
Bruno Cury Camargo
Abstract:
We demonstrate the selective control of the magnetic response and photoluminescence properties of Er3+ centers with light, by associating them with a highly conjugated beta-diketonate (1,3-di(2-naphthyl)-1,3-propanedione) ligand. We demonstrate this system to be an optically-pumped molecular compound emittingin infra-red, which can be employed as a precise heat-driving and detecting unit for low t…
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We demonstrate the selective control of the magnetic response and photoluminescence properties of Er3+ centers with light, by associating them with a highly conjugated beta-diketonate (1,3-di(2-naphthyl)-1,3-propanedione) ligand. We demonstrate this system to be an optically-pumped molecular compound emittingin infra-red, which can be employed as a precise heat-driving and detecting unit for low temperatures
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Submitted 31 July, 2023;
originally announced July 2023.
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Optical, electronic and structural properties of ScAlMgO4
Authors:
Tomasz Stefaniuka,
Jan Suffczyński,
Małgorzata Wierzbowsk,
Jarosław Z. Domagała,
Jarosław Kisielewski,
Andrzej Kłos,
Alexander Korneluk,
Henryk Teisseyre
Abstract:
Magnesium aluminate scandium oxide (ScAlMgO4) is a promising lattice-matched substrate material for GaN- and ZnO-based optoelectronic devices. Yet, despite its clear advantages over substrates commonly used in heteroepitaxial growth, several fundamental properties of ScAlMgO4 remain unsettled. Here, we provide a comprehensive picture of its optical, electronic and structural properties by studying…
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Magnesium aluminate scandium oxide (ScAlMgO4) is a promising lattice-matched substrate material for GaN- and ZnO-based optoelectronic devices. Yet, despite its clear advantages over substrates commonly used in heteroepitaxial growth, several fundamental properties of ScAlMgO4 remain unsettled. Here, we provide a comprehensive picture of its optical, electronic and structural properties by studying ScAlMgO4 single crystals grown by the Czochralski method. We use variable angle spectroscopic ellipsometry to determine complex in-plane and out-of-plane refractive indices in the range from 193 to 1690 nm. An oscillator-based model provides a phenomenological description of the ellipsometric spectra with excellent agreement over the entire range of wavelengths. For convenience, we supply the reader also with Cauchy formulas describing the real part of the anisotropic refractive index for wavelengths above 400 nm. Ab initio many-body perturbation theory modeling provides information about the electronic structure of ScAlMgO4, and successfully validated experimentally obtained refractive index values. Simulations also show exciton binding energy as large as a few hundred of meV, indicating ScAlMgO4 as a promising material for implementation in low-threshold, deep-UV lasing devices operating at room temperature. X-ray diffraction measurements confirm lattice constants of ScAlMgO4 previously reported, but in addition, reveal that dominant crystallographic planes (001) are mutually inclined by about 0.009°. In view of our work, ScAlMgO4 is a highly transparent, low refractive index, birefringent material similar to a sapphire, but with a much more favorable lattice constant and simpler processing.
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Submitted 8 March, 2023;
originally announced March 2023.
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Concept of Inverted Refractive-Index-Contrast Grating Mirror and Exemplary Fabrication by 3D Microprinting
Authors:
Emilia Pruszyńska-Karbownik,
Daniel Jandura,
Maciej Dems,
Łukasz Zinkiewicz,
Artur Broda,
Marcin Gȩbski,
Jan Muszalski,
Dusan Pudis,
Jan Suffczyński,
Tomasz Czyszanowski
Abstract:
Highly reflective mirrors are indispensable components in a variety of state-of-the-art photonic devices. Typically used, bulky, multi-layered distributed Bragg (DBR) reflectors are limited to lattice-matched semiconductors or nonconductive dielectrics. Here, we introduce an inverted refractive-index-contrast grating (ICG), as compact, single layer alternative to DBR. In the ICG, a subwavelength o…
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Highly reflective mirrors are indispensable components in a variety of state-of-the-art photonic devices. Typically used, bulky, multi-layered distributed Bragg (DBR) reflectors are limited to lattice-matched semiconductors or nonconductive dielectrics. Here, we introduce an inverted refractive-index-contrast grating (ICG), as compact, single layer alternative to DBR. In the ICG, a subwavelength one-dimensional grating made of a low refractive index material is implemented on a high refractive index cladding. Our numerical simulations show that the ICG provides nearly total optical power reflectance for the light incident from the side of the cladding whenever the refractive index of the grating exceeds 1.75, irrespective of the refractive index of the cladding. Additionally, the ICG enables polarization discrimination and phase tuning of the reflected and transmitted light, the property not achievable with the DBR. We experimentally demonstrate a proof-of-concept ICG fabricated according to the proposed design, using the technique of 3D microprinting in which thin stripes of IP-Dip photoresist are deposited on a Si cladding. This one-step method avoids laborious and often destructive etching-based procedures for grating structuration, making it possible to implement the grating on any arbitrary cladding material.
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Submitted 14 February, 2023;
originally announced February 2023.
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Neural networks based on ultrafast time-delayed effects in exciton-polaritons
Authors:
Rafał Mirek,
Andrzej Opala,
Magdalena Furman,
Mateusz Król,
Krzysztof Tyszka,
Bartłomiej Seredyński,
Wojciech Pacuski,
Jan Suffczyński,
Jacek Szczytko,
Michał Matuszewski,
Barbara Piętka
Abstract:
We demonstrate that time-delayed nonlinear effects in exciton-polaritons can be used to construct neural networks where information is coded in optical pulses arriving consecutively on the sample. The highly nonlinear effects are induced by time-dependent interactions with the excitonic reservoir. These nonlinearities allow to create a nonlinear XOR logic gate that can perform operations on the pi…
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We demonstrate that time-delayed nonlinear effects in exciton-polaritons can be used to construct neural networks where information is coded in optical pulses arriving consecutively on the sample. The highly nonlinear effects are induced by time-dependent interactions with the excitonic reservoir. These nonlinearities allow to create a nonlinear XOR logic gate that can perform operations on the picosecond timescale. An optoelectronic neural network based on the constructed logic gate performs classification of spoken digits with a high accuracy rate.
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Submitted 1 January, 2022;
originally announced January 2022.
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Leaky Integrate-and-Fire Mechanism in Exciton-Polariton Condensates for Photonic Spiking Neurons
Authors:
K. Tyszka,
M. Furman,
R. Mirek,
M. Król,
A. Opala,
B. Seredyński,
J. Suffczyński,
W. Pacuski,
M. Matuszewski,
J. Szczytko,
B. Piętka
Abstract:
This paper introduces a new approach to neuromorphic photonics in which microcavities exhibiting strong exciton-photon interaction may serve as building blocks of optical spiking neurons. The experimental results demonstrate the intrinsic property of exciton-polaritons to resemble the Leaky Integrate-and-Fire spiking mechanism. It is shown that exciton-polariton microcavities when non-resonantly p…
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This paper introduces a new approach to neuromorphic photonics in which microcavities exhibiting strong exciton-photon interaction may serve as building blocks of optical spiking neurons. The experimental results demonstrate the intrinsic property of exciton-polaritons to resemble the Leaky Integrate-and-Fire spiking mechanism. It is shown that exciton-polariton microcavities when non-resonantly pumped with a pulsed laser exhibit leaky-integration due to relaxation of the excitonic reservoir, threshold-and-fire mechanism due to transition to Bose-Einstein condensate, and resetting due to stimulated emission of photons. These effects, evidenced in photoluminescence characteristics, arise within sub-ns timescales. The presented approach provides means for energy-efficient ultrafast processing of spike-like laser pulses at the level below 1 pJ/spike.
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Submitted 25 November, 2021;
originally announced November 2021.
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Molecular Beam Epitaxy growth of MoTe$_2$ on Hexagonal Boron Nitride
Authors:
Bartłomiej Seredyński,
Rafał Bożek,
Jan Suffczyński,
Justyna Piwowar,
Janusz Sadowski,
Wojciech Pacuski
Abstract:
Hexagonal boron nitride has already been proven to serve as a decent substrate for high quality epitaxial growth of several 2D materials, such as graphene, MoSe$_{\tiny{\textrm{2}}}$, MoS$_{\tiny{\textrm{2}}}$ or WSe$_{\tiny{\textrm{2}}}$. Here, we present for the first time the molecular beam epitaxy growth of MoTe$_{\tiny{\textrm{2}}}$ on atomically smooth hexagonal boron nitride (hBN) substrate…
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Hexagonal boron nitride has already been proven to serve as a decent substrate for high quality epitaxial growth of several 2D materials, such as graphene, MoSe$_{\tiny{\textrm{2}}}$, MoS$_{\tiny{\textrm{2}}}$ or WSe$_{\tiny{\textrm{2}}}$. Here, we present for the first time the molecular beam epitaxy growth of MoTe$_{\tiny{\textrm{2}}}$ on atomically smooth hexagonal boron nitride (hBN) substrate. Occurrence of MoTe$_{\tiny{\textrm{2}}}$ in various crystalline phases such as distorted octahedral 1T' phase with semimetal properties or hexagonal 2H phase with semiconducting properties opens a possibility of realisation of crystal-phase homostructures with tunable properties. Atomic force microscopy studies of MoTe$_{\tiny{\textrm{2}}}$ grown in a single monolayer regime enable us to determine surface morphology as a function of the growth conditions. The diffusion constant of MoTe$_{\tiny{\textrm{2}}}$ grown on hBN can be altered 5 times by annealing after the growth, reaching about 5 $\cdot$ 10$^{-6}$ cm$^{2}$/s. Raman spectroscopy results suggest a coexistence of both 2H and 1T' MoTe$_{\tiny{\textrm{2}}}$ phases in the studied samples.
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Submitted 5 July, 2023; v1 submitted 24 November, 2021;
originally announced November 2021.
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Molecular Beam Epitaxy of a 2D material nearly lattice matched to a 3D substrate: $NiTe_{2}$ on $GaAs$
Authors:
Bartłomiej Seredyński,
Zuzanna Ogorzałek,
Wiktoria Zajkowska,
Rafał Bożek,
Mateusz Tokarczyk,
Jan Suffczyński,
Sławomir Kret,
Janusz Sadowski,
Marta Gryglas-Borysiewicz,
Wojciech Pacuski
Abstract:
The lattice mismatch between interesting 2D materials and commonly available 3D substrates is one of the obstacles in the epitaxial growth of monolithic 2D/3D heterostructures, but a number of 2D materials have not yet been considered for epitaxy. Here we present the first molecular beam epitaxy growth of NiTe$_{2}$ 2D transition metal dichalcogenide. Importantly, the growth is realized on a nearl…
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The lattice mismatch between interesting 2D materials and commonly available 3D substrates is one of the obstacles in the epitaxial growth of monolithic 2D/3D heterostructures, but a number of 2D materials have not yet been considered for epitaxy. Here we present the first molecular beam epitaxy growth of NiTe$_{2}$ 2D transition metal dichalcogenide. Importantly, the growth is realized on a nearly lattice matched GaAs(111)B substrate. Structural properties of the grown layers are investigated by electron diffraction, X-ray diffraction, and scanning tunnelling microscopy. Surface coverage and atomic scale order is evidenced by images obtained with atomic force, scanning electron, and transmission electron microscopy. Basic transport properties were measured confirming that NiTe$_{2}$ layers are metallic, with the Hall concentration of $10^{20}$cm$^{-3}$ to $10^{23}$cm$^{-3}$, depending on the growth conditions.
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Submitted 16 August, 2021;
originally announced August 2021.
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Polariton lasing and energy-degenerate parametric scattering in non-resonantly driven coupled planar microcavities
Authors:
Krzysztof Sawicki,
Thomas J. Sturges,
Maciej Ściesiek,
Tomasz Kazimierczuk,
Kamil Sobczak,
Andrzej Golnik,
Wojciech Pacuski,
Jan Suffczyński
Abstract:
Multi-level exciton-polariton systems offer an attractive platform for studies of non-linear optical phenomena. However, studies of such consequential non-linear phenomena as polariton condensation and lasing in planar microcavities have so far been limited to two-level systems, where the condensation takes place in the lowest attainable state. Here, we report non-equilibrium Bose-Einstein condens…
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Multi-level exciton-polariton systems offer an attractive platform for studies of non-linear optical phenomena. However, studies of such consequential non-linear phenomena as polariton condensation and lasing in planar microcavities have so far been limited to two-level systems, where the condensation takes place in the lowest attainable state. Here, we report non-equilibrium Bose-Einstein condensation of exciton-polaritons and low threshold, dual-wavelength polariton lasing in vertically coupled, double planar microcavities. Moreover, we find that the presence of the non-resonantly driven condensate triggers interbranch exciton-polariton transfer in the form of energy-degenerate parametric scattering. Such an effect has so far been observed only under excitation that is strictly resonant in terms of the energy and incidence angle. We describe theoretically our time-integrated and time-resolved photoluminescence investigations by a set of rate equations involving an open-dissipative Gross-Pitaevskii equation. Our platform's inherent tunability is promising for construction of planar lattices, enabling three-dimensional polariton hop** and realization of photonic devices, such as two-qubit polariton-based logic gates.
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Submitted 12 February, 2021;
originally announced February 2021.
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Long-Distance Coupling and Energy Transfer between Exciton States in Magnetically Controlled Microcavities
Authors:
Maciej Ściesiek,
Krzysztof Sawicki,
Wojciech Pacuski,
Kamil Sobczak,
Tomasz Kazimierczuk,
Andrzej Golnik,
Jan Suffczyński
Abstract:
Coupling of quantum emitters in a semiconductor relies, generally, on short-range dipole-dipole or electronic exchange type interactions. Consistently, energy transfer between exciton states, that is, electron-hole pairs bound by Coulomb interaction, is limited to distances of the order of 10~nm. Here, we demonstrate polariton-mediated coupling and energy transfer between excitonic states over a d…
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Coupling of quantum emitters in a semiconductor relies, generally, on short-range dipole-dipole or electronic exchange type interactions. Consistently, energy transfer between exciton states, that is, electron-hole pairs bound by Coulomb interaction, is limited to distances of the order of 10~nm. Here, we demonstrate polariton-mediated coupling and energy transfer between excitonic states over a distance exceeding 2~$μ$m. We accomplish this by coupling quantum well-confined excitons through the delocalized mode of two coupled optical microcavities. Use of magnetically doped quantum wells enables us to tune the confined exciton energy by the magnetic field and in this way to control the spatial direction of the transfer. Such controlled, long-distance interaction between coherently coupled quantum emitters opens possibilities of a scalable implementation of quantum networks and quantum simulators based on solid-state, multi-cavity systems.
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Submitted 17 September, 2020;
originally announced September 2020.
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Magnetoelastic interaction in the two-dimensional magnetic material MnPS$_3$ studied by first principles calculations and Raman experiments
Authors:
Diana Vaclavkova,
Alex Delhomme,
Clément Faugeras,
Marek Potemski,
Aleksander Bogucki,
Jan Suffczyński,
Piotr Kossacki,
Andrew Wildes,
Benoit Gremaud,
Andrés Saúl
Abstract:
We report experimental and theoretical studies on the magnetoelastic interactions in MnPS$_3$. Raman scattering response measured as a function of temperature shows a blue shift of the Raman active modes at 120.2 and 155.1 cm$^{-1}$, when the temperature is raised across the antiferromagnetic-paramagnetic transition. Density functional theory (DFT) calculations have been performed to estimate the…
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We report experimental and theoretical studies on the magnetoelastic interactions in MnPS$_3$. Raman scattering response measured as a function of temperature shows a blue shift of the Raman active modes at 120.2 and 155.1 cm$^{-1}$, when the temperature is raised across the antiferromagnetic-paramagnetic transition. Density functional theory (DFT) calculations have been performed to estimate the effective exchange interactions and calculate the Raman active phonon modes. The calculations lead to the conclusion that the peculiar behavior with temperature of the two low energy phonon modes can be explained by the symmetry of their corresponding normal coordinates which involve the virtual modification of the super-exchange angles associated with the leading antiferromagnetic (AFM) interactions.
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Submitted 22 May, 2020;
originally announced May 2020.
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Resonant excitation of infra-red emission in GaN:(Mn,Mg)
Authors:
Dmytro Kysylychyn,
Jan Suffczyński,
Tomasz Woźniak,
Nevill Gonzalez Szwacki,
Alberta Bonanni
Abstract:
By combining experimental photoluminescence excitation spectroscopy and calculations based on density functional theory and many-body Green's functions, the most efficient excitation channels of infra-red (IR) emission from Mn-Mg$_{k}$ paramagnetic complexes stabilized in GaN:(Mn,Mg) are here identified. Moreover, a Tanabe-Sugano energy diagram for 3$d^{2}$Mn$ ^{5+}$ is reconstructed and Mn-Mg…
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By combining experimental photoluminescence excitation spectroscopy and calculations based on density functional theory and many-body Green's functions, the most efficient excitation channels of infra-red (IR) emission from Mn-Mg$_{k}$ paramagnetic complexes stabilized in GaN:(Mn,Mg) are here identified. Moreover, a Tanabe-Sugano energy diagram for 3$d^{2}$Mn$ ^{5+}$ is reconstructed and Mn-Mg$_{3}$ are singled out as the predominant configurations responsible for the IR emission. The correlation of intensity of the individual emission lines as a function of temperature and excitation energy, allows assigning them to well defined and specific optical transitions.
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Submitted 6 March, 2018;
originally announced March 2018.
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Design and control of mode interaction in coupled ZnTe optical microcavities
Authors:
M. Ściesiek,
W. Pacuski,
J-G. Rousset,
M. Parlińska-Wojtan,
A. Golnik,
J. Suffczyński
Abstract:
The photonics involving II-VI epitaxial layers was limited so far to structures based on a single planar microcavity. Here, we present double, vertically coupled, ZnTe optical microcavities in planar and 3-D photonic molecule geometry. We design the structures with the help of transfer matrix method calculations and we establish their fabrication technology by molecular beam epitaxy. We characteri…
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The photonics involving II-VI epitaxial layers was limited so far to structures based on a single planar microcavity. Here, we present double, vertically coupled, ZnTe optical microcavities in planar and 3-D photonic molecule geometry. We design the structures with the help of transfer matrix method calculations and we establish their fabrication technology by molecular beam epitaxy. We characterize the samples by reflectivity spatial map** and study them by measurements of angle-integrated and angle-resolved photoluminescence and reflectivity. We efficiently tailor the interaction strength of the cavities optical modes by an adjustment of the spatial separation between the microcavities, their thickness ratio and by the size of micropillars etched out of the planar structure. Coupling constants extracted from our measurements agree well with those determined in calculations in the frame of a tight-binding approach applied to one-dimensional photonic structures.
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Submitted 9 March, 2017;
originally announced March 2017.
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Fe dopant in ZnO: 2+ vs 3+ valency and ion-carrier s,p-d exchange interaction
Authors:
J. Papierska,
A. Ciechan,
P. Bogusławski,
M. Boshta,
M. M. Gomaa,
E. Chikoidze,
Y. Dumont,
A. Drabińska,
H. Przybylińska,
A. Gardias,
J. Szczytko,
A. Twardowski,
M. Tokarczyk,
G. Kowalski,
B. Witkowski,
K. Sawicki,
W. Pacuski,
M. Nawrocki,
J. Suffczyński
Abstract:
Dopants of transition metal ions in II-VI semiconductors exhibit native 2+ valency. Despite this, 3+ or mixed 3+/2+ valency of iron ions in ZnO was reported previously. Several contradictory mechanisms have been put forward for explanation of this fact so far. Here, we analyze Fe valency in ZnO by complementary theoretical and experimental studies. Our calculations within the generalized gradient…
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Dopants of transition metal ions in II-VI semiconductors exhibit native 2+ valency. Despite this, 3+ or mixed 3+/2+ valency of iron ions in ZnO was reported previously. Several contradictory mechanisms have been put forward for explanation of this fact so far. Here, we analyze Fe valency in ZnO by complementary theoretical and experimental studies. Our calculations within the generalized gradient approximation (GGA+U) indicate that the Fe ion is a relatively shallow donor. Its stable charge state is Fe2+ in ideal ZnO, however, the high energy of the (+/0) transition level enhances the compensation of Fe2+ to Fe3+ by non-intentional acceptors in real samples. Using several experimental methods like electron paramagnetic resonance, magnetometry, conductivity, excitonic magnetic circular dichroism and magneto-photoluminescence we confirm the 3+ valency of the iron ions in polycrystalline (Zn,Fe)O films with the Fe content attaining 0.2%.We find a predicted increase of n-type conductivity upon the Fe do** with the Fe donor ionization energy of 0.25 +/- 0.02 eV consistent with the results of theoretical considerations. Moreover, our magnetooptical measurements confirm the calculated non-vanishing s,p-d exchange interaction between band carriers and localized magnetic moments of the Fe3+ ions in the ZnO, being so far an unsettled issue.
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Submitted 2 December, 2016; v1 submitted 3 March, 2016;
originally announced March 2016.
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Effect of electron-hole separation on optical properties of individual Cd(Se,Te) Quantum Dots
Authors:
Maciej Ściesiek,
Jan Suffczyński,
Wojciech Pacuski,
Magdalena Parlińska-Wojtan,
Tomasz Smoleński,
Piotr Kossacki,
Andrzej Golnik
Abstract:
Cd(Se,Te) Quantum Dots (QD) in ZnSe barrier typically exhibit a very high spectral density, which precludes investigation of single dot photoluminescence. We design, grow and study individual Cd(Se,Te)/ZnSe QDs of low spectral density of emission lines achieved by implementation of a Mn-assisted epitaxial growth. We find an unusually large variation of exciton-biexciton energy difference (3 meV…
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Cd(Se,Te) Quantum Dots (QD) in ZnSe barrier typically exhibit a very high spectral density, which precludes investigation of single dot photoluminescence. We design, grow and study individual Cd(Se,Te)/ZnSe QDs of low spectral density of emission lines achieved by implementation of a Mn-assisted epitaxial growth. We find an unusually large variation of exciton-biexciton energy difference (3 meV $\leq$ $Δ\mathrm{E_{X-XX}}$ $\leq$ 26 meV) and of exciton radiative recombination rate in the statistics of QDs. We observe a strong correlation between the exciton-biexciton energy difference, exciton recombination rate, splitting between dark and bright exciton, and additionally the exciton fine structure splitting $δ_1$ and Landé factor. Above results indicate that values of the $δ_1$ and of the Landé factor in the studied QDs are dictated primarily by the electron and hole respective spatial shift and wavefunctions overlap, which vary from dot to dot due to a different degree of localization of electrons and holes in, respectively, CdSe and CdTe rich QD regions.
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Submitted 1 March, 2016;
originally announced March 2016.
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Epitaxial growth and Photoluminescence Excitation spectroscopy of CdSe Quantum Dots in (Zn,Cd)Se barrier
Authors:
J. Piwowar,
W. Pacuski,
T. Smoleński,
M. Goryca,
A. Bogucki,
A. Golnik,
M. Nawrocki,
P. Kossacki,
J. Suffczyński
Abstract:
Design, epitaxial growth, and resonant spectroscopy of CdSe Quantum Dots (QDs) embedded in an innovative (Zn,Cd)Se barrier are presented. The (Zn,Cd)Se barrier enables shifting of QDs energy emission down to 1.87 eV, that is below the energy of Mn$^{2+}$ ions internal transition (2.1 eV). This opens a perspective for implementation of epitaxial CdSe QDs doped with several Mn ions as, e. g., the li…
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Design, epitaxial growth, and resonant spectroscopy of CdSe Quantum Dots (QDs) embedded in an innovative (Zn,Cd)Se barrier are presented. The (Zn,Cd)Se barrier enables shifting of QDs energy emission down to 1.87 eV, that is below the energy of Mn$^{2+}$ ions internal transition (2.1 eV). This opens a perspective for implementation of epitaxial CdSe QDs doped with several Mn ions as, e. g., the light sources in high quantum yield magnetooptical devices. Polarization resolved Photoluminescence Excitation measurements of individual QDs reveal sharp ($Γ<$ 150 $μ$eV) maxima and transfer of optical polarization to QD confining charged exciton state with efficiency attaining 26 %. The QD do** with single Mn$^{2+}$ ions is achieved.
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Submitted 24 December, 2015;
originally announced December 2015.
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Strong coupling and polariton lasing in Te based microcavities embedding (Cd,Zn)Te quantum wells
Authors:
Jean-Guy Rousset,
Barbara Piętka,
Mateusz Król,
Rafał Mirek,
Katarzyna Lekenta,
Jacek Szczytko,
Jolanta Borysiuk,
Jan Suffczynski,
Tomasz Kazimierczuk,
Mateusz Goryca,
Tomasz Smoleński,
Piotr Kossacki,
Michał Nawrocki,
Wojciech Pacuski
Abstract:
We report on properties of an optical microcavity based on (Cd,Zn,Mg)Te layers and embedding (Cd,Zn)Te quantum wells. The key point of the structure design is the lattice matching of the whole structure to MgTe, which eliminates the internal strain and allows one to embed an arbitrary number of unstrained quantum wells in the microcavity. We evidence the strong light-matter coupling regime already…
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We report on properties of an optical microcavity based on (Cd,Zn,Mg)Te layers and embedding (Cd,Zn)Te quantum wells. The key point of the structure design is the lattice matching of the whole structure to MgTe, which eliminates the internal strain and allows one to embed an arbitrary number of unstrained quantum wells in the microcavity. We evidence the strong light-matter coupling regime already for the structure containing a single quantum well. Embedding four unstrained quantum wells results in further enhancement of the exciton-photon coupling and the polariton lasing in the strong coupling regime.
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Submitted 15 October, 2015;
originally announced October 2015.
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Single-color, in situ photolithography marking of individual CdTe/ZnTe Quantum Dots containing a single Mn2+ ion
Authors:
Krzysztof Sawicki,
Filip K. Malinowski,
Krzysztof Galkowski,
Tomasz Jakubczyk,
Piotr Kossacki,
Wojciech Pacuski,
Jan Suffczynski
Abstract:
A simple, single-color method for permanent marking of the position of individual self-assembled semiconductor Quantum Dots (QDs) at cryogenic temperatures is reported. The method combines in situ photolithography with standard micro-photoluminescence spectroscopy. Its utility is proven by a systematic magnetooptical study of a single CdTe/ZnTe QD containing a Mn2+ ion, where a magnetic field of u…
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A simple, single-color method for permanent marking of the position of individual self-assembled semiconductor Quantum Dots (QDs) at cryogenic temperatures is reported. The method combines in situ photolithography with standard micro-photoluminescence spectroscopy. Its utility is proven by a systematic magnetooptical study of a single CdTe/ZnTe QD containing a Mn2+ ion, where a magnetic field of up to 10 T in two orthogonal, Faraday and Voigt, configurations is applied to the same QD. The presented approach can be applied to a wide range of solid state nanoemitters.
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Submitted 26 January, 2015;
originally announced January 2015.
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Angle Dependence of Photonic Enhancement of Magneto-Optical Kerr Effect in DMS Layers
Authors:
Marcin Koba,
Jan Suffczynski
Abstract:
We investigate theoretically an angle dependence of enhancement of polar magneto-optical Kerr effect (MOKE) obtained thanks to a deposition of a paramagnetic Diluted Magnetic Semiconductor (DMS) layer on one-dimensional photonic crystal layer. Our transfer matrix method based calculations conducted for TE and TM polarizations of the incident light predict up to an order of magnitude stronger MOKE…
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We investigate theoretically an angle dependence of enhancement of polar magneto-optical Kerr effect (MOKE) obtained thanks to a deposition of a paramagnetic Diluted Magnetic Semiconductor (DMS) layer on one-dimensional photonic crystal layer. Our transfer matrix method based calculations conducted for TE and TM polarizations of the incident light predict up to an order of magnitude stronger MOKE for a (Ga,Fe)N DMS layer when implementing the proposed design. The maximum enhancement for TE and TM polarization occurs for the light incidence at the normal and at the Brewster angle, respectively. This indicates a possibility of tuning of the MOKE enhancement by adjustment of the polarization and the incidence angle of the light.
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Submitted 26 December, 2014;
originally announced December 2014.
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Influence of ZnTe based distributed Bragg reflectors on the yellow range luminescence of self assembled CdTe QDs
Authors:
Jean-Guy Rousset,
Jakub Kobak,
Elżbieta Janik,
Magdalena Parlinska-Wojtan,
Tomasz Słupinski,
Jan Suffczyński,
Andrzej Golnik,
Piotr Kossacki,
Michał Nawrocki,
Wojciech Pacuski
Abstract:
The influence of a distributed Bragg reflector composed of ZnTe, MgTe, and MgSe superlattices on photoluminescence of self assembled CdTe quantum dots (QD) emitting in the yellow spectral range is investigated. In the case of QDs grown on a distributed Bragg reflector the photoluminescence intensity is enhanced by more than one order of magnitude, whereas the single QD lines are broadened as compa…
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The influence of a distributed Bragg reflector composed of ZnTe, MgTe, and MgSe superlattices on photoluminescence of self assembled CdTe quantum dots (QD) emitting in the yellow spectral range is investigated. In the case of QDs grown on a distributed Bragg reflector the photoluminescence intensity is enhanced by more than one order of magnitude, whereas the single QD lines are broadened as compared to the case of QDs grown on a ZnTe buffer. Structural and chemical analysis reveal an unintentional formation of a thin ZnSe layer induced by the growth interruption needed for the deposition of the QDs sheet. Sharp emission lines from individual quantum dots are recovered in the case of a thicker ZnTe layer grown prior to the QDs. This indicates that growth interruptions might be responsible for the QD emission line broadening.
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Submitted 3 November, 2014;
originally announced November 2014.
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Manipulating Mn--Mg$_k$ cation complexes to control the charge- and spin-state of Mn in GaN
Authors:
Thibaut Devillers,
Mauro Rovezzi,
Nevill Gonzalez Szwacki,
Sylwia Dobkowska,
Wiktor Stefanowicz,
Dariusz Sztenkiel,
Andreas Grois,
Jan Suffczyński,
Andrea Navarro-Quezada,
Bogdan Faina,
Tian Li,
Pieter Glatzel,
Francesco d'Acapito,
Rafał Jakieła,
Maciej Sawicki,
Jacek A. Majewski,
Tomasz Dietl,
Alberta Bonanni
Abstract:
Owing to the variety of possible charge and spin states and to the different ways of coupling to the environment, paramagnetic centres in wide band-gap semiconductors and insulators exhibit a strikingly rich spectrum of properties and functionalities, exploited in commercial light emitters and proposed for applications in quantum information. Here we demonstrate, by combining synchrotron technique…
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Owing to the variety of possible charge and spin states and to the different ways of coupling to the environment, paramagnetic centres in wide band-gap semiconductors and insulators exhibit a strikingly rich spectrum of properties and functionalities, exploited in commercial light emitters and proposed for applications in quantum information. Here we demonstrate, by combining synchrotron techniques with magnetic, optical and \emph{ab initio} studies, that the codo** of GaN:Mn with Mg allows to control the Mn$^{n+}$ charge and spin state in the range $3\le n\le 5$ and $2\ge S\ge 1$. According to our results, this outstanding degree of tunability arises from the formation of hitherto concealed cation complexes Mn-Mg$_k$, where the number of ligands $k$ is pre-defined by fabrication conditions. The properties of these complexes allow to extend towards the infrared the already remarkable optical capabilities of nitrides, open to solotronics functionalities, and generally represent a fresh perspective for magnetic semiconductors.
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Submitted 13 November, 2013;
originally announced November 2013.
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Designing quantum dots for solotronics
Authors:
J. Kobak,
T. Smoleński,
M. Goryca,
M. Papaj,
K. Gietka,
A. Bogucki,
M. Koperski,
J. -G. Rousset,
J. Suffczyński,
E. Janik,
M. Nawrocki,
A. Golnik,
P. Kossacki,
W. Pacuski
Abstract:
Solotronics, optoelectronics based on solitary dopants, is an emerging field of research and technology reaching the ultimate limit of miniaturization. It aims at exploiting quantum properties of individual ions or defects embedded in a semiconductor matrix. As already shown, optical control of a spin of a magnetic ion is feasible employing photo-generated carriers confined in a quantum dot. A non…
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Solotronics, optoelectronics based on solitary dopants, is an emerging field of research and technology reaching the ultimate limit of miniaturization. It aims at exploiting quantum properties of individual ions or defects embedded in a semiconductor matrix. As already shown, optical control of a spin of a magnetic ion is feasible employing photo-generated carriers confined in a quantum dot. A non-radiative recombination, regarded as a severe problem, limited development of quantum dots with magnetic ions. Our photoluminescence studies on, so far unexplored, individual CdTe dots with single cobalt ions and individual CdSe dots with single manganese ions show, however, that even if energetically allowed, the single ion related non-radiative recombination is negligible in such zero-dimensional structures. This opens solotronics for a wide range of even not yet considered systems. Basing on the results of our single spin relaxation experiments and on the material trends, we identify optimal magnetic ion-quantum dot systems for implementation of a single-ion based spin memory.
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Submitted 23 August, 2013;
originally announced August 2013.
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Magnetooptical properties of (Ga,Fe)N layers
Authors:
J. Papierska,
J. -G. Rousset,
W. Pacuski,
P. Kossacki,
A. Golnik,
M. Nawrocki,
J. A. Gaj,
J. Suffczyński,
I. Kowalik,
W. Stefanowicz,
M. Sawicki,
T. Dietl,
A. Navarro-Quezada,
B. Faina,
Tian Li,
A. Bonanni
Abstract:
Magnetooptical properties of (Ga,Mn)N layers containing various concentrations of Fe-rich nanocrystals embedded in paramagnetic (Ga,Fe)N layers are reported. Previous studies of such samples demonstrated that magnetization consists of a paramagnetic contribution due to substitutional diluted Fe ions as well as of ferromagnetic and antiferromagnetic components originating from Fe-rich nanocrystals,…
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Magnetooptical properties of (Ga,Mn)N layers containing various concentrations of Fe-rich nanocrystals embedded in paramagnetic (Ga,Fe)N layers are reported. Previous studies of such samples demonstrated that magnetization consists of a paramagnetic contribution due to substitutional diluted Fe ions as well as of ferromagnetic and antiferromagnetic components originating from Fe-rich nanocrystals, whose relative abundance can be controlled by the grow conditions. The nanocrystals are found to broaden and to reduce the magnitude of the excitonic features. However, the ferromagnetic contribution, clearly seen in SQUID magnetometry, is not revealed by magnetic circular dichroism (MCD). Possible reasons for differences in magnetic response determined by MCD and SQUID measurements are discussed.
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Submitted 15 August, 2013;
originally announced August 2013.
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Frequency cavity pulling induced by a single semiconductor quantum dot
Authors:
Daniel Valente,
Jan Suffczyński,
Tomasz Jakubczyk,
Adrien Dousse,
Aristide Lemaître,
Isabelle Sagnes,
Loïc Lanco,
Paul Voisin,
Alexia Auffeves,
Pascale Senellart
Abstract:
We investigate the emission properties of a single semiconductor quantum dot deterministically coupled to a confined optical mode in the weak coupling regime. A strong pulling, broadening and narrowing of the cavity mode emission is evidenced when changing the spectral detuning between the emitter and the cavity. These features are theoretically accounted for by considering the phonon assisted emi…
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We investigate the emission properties of a single semiconductor quantum dot deterministically coupled to a confined optical mode in the weak coupling regime. A strong pulling, broadening and narrowing of the cavity mode emission is evidenced when changing the spectral detuning between the emitter and the cavity. These features are theoretically accounted for by considering the phonon assisted emission of the quantum dot transition. These observations highlight a new situation for cavity quantum electrodynamics involving spectrally broad emitters.
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Submitted 23 July, 2013;
originally announced July 2013.
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Relation between exciton splittings, magnetic circular dichroism, and magnetization in wurtzite (Ga,Fe)N
Authors:
J. -G. Rousset,
J. Papierska,
W. Pacuski,
A. Golnik,
M. Nawrocki,
W. Stefanowicz,
S. Stefanowicz,
M. Sawicki,
R. Jakiela,
T. Dietl,
A. Navarro-Quezada,
B. Faina,
T. Li,
A. Bonanni,
J. Suffczynski
Abstract:
The question of the correlation between magnetization, band splittings, and magnetic circular dichroism (MCD) in the fundamental gap region of dilute magnetic semiconductors is examined experimentally and theoretically taking the case of wurtzite Ga(1-x)FexN as an example. Magnetization and polarization-resolved reflectivity measurements have been performed down to 2K and up to 7T for x = 0.2%. Op…
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The question of the correlation between magnetization, band splittings, and magnetic circular dichroism (MCD) in the fundamental gap region of dilute magnetic semiconductors is examined experimentally and theoretically taking the case of wurtzite Ga(1-x)FexN as an example. Magnetization and polarization-resolved reflectivity measurements have been performed down to 2K and up to 7T for x = 0.2%. Optical transitions originating from all three free excitons A, B and C, specific to the wurtzite structure, have been observed and their evolution with the magnetic field determined. It is demonstrated that the magnitude of the exciton splittings evaluated from reflectivity-MCD data can be overestimated by more than a factor of 2, as compared to the values obtained by describing the polarization-resolved reflectivity spectra with appropriate dielectric functions. A series of model calculations shows that the quantitative inaccuracy of MCD originates from a substantial influence of the magnetization-dependent exchange interactions not only on the spin splittings of excitons but also upon their linewidth and oscillator strength. At the same time, a method is proposed that allows to evaluate the field and temperature dependencies of the magnetization from MCD spectra. The accurate values of the excitonic splittings and of the magnetization reported here substantiate the magnitudes of the apparent $sp-d$ exchange integrals in (Ga,Fe)N previously determined.
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Submitted 9 October, 2014; v1 submitted 31 May, 2013;
originally announced May 2013.
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Modification of emission properties of ZnO layers due to plasmonic near-field coupling to Ag nanoislands
Authors:
Joanna Papierska,
Bartłomiej S. Witkowski,
Anastasiya Derkachova,
Krzysztof P. Korona,
Johannes Binder,
Krzysztof Gałkowski,
Łukasz Wachnicki,
Marek Godlewski,
Tomasz Dietl,
Jan Suffczyński
Abstract:
A simple fabrication method of Ag nanoislands on ZnO films is presented. Continuous wave and time-resolved photoluminescence and transmission are employed to investigate modifications of visible and UV emissions of ZnO brought about by coupling to localized surface plasmons residing on Ag nanoislands. The size of the nanoislands, determining their absorption and scattering efficiencies, is found t…
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A simple fabrication method of Ag nanoislands on ZnO films is presented. Continuous wave and time-resolved photoluminescence and transmission are employed to investigate modifications of visible and UV emissions of ZnO brought about by coupling to localized surface plasmons residing on Ag nanoislands. The size of the nanoislands, determining their absorption and scattering efficiencies, is found to be an important factor governing plasmonic modification of optical response of ZnO films. The presence of the Ag nanoislands of appropriate dimensions causes a strong (threefold) increase in emission intensity and up to 1.5 times faster recombination. The experimental results are successfully described by model calculations within the Mie theory.
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Submitted 31 January, 2013;
originally announced January 2013.
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Magneto-Optical Effects Enhancement in DMS Layers Utilizing 1-D Photonic Crystal
Authors:
M. Koba,
J. Suffczyński
Abstract:
We propose a theoretical design of a structure combining a diluted magnetic semiconductor (DMS) layer with one-dimensional photonic crystal and show that it allows for a sizable (a few-fold) enhancement of the magneto-optical Kerr effect (MOKE) magnitude. We base our calculations on the transfer matrix method assuming realistic, and optimal with respect to a sample growth, parameters. We investiga…
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We propose a theoretical design of a structure combining a diluted magnetic semiconductor (DMS) layer with one-dimensional photonic crystal and show that it allows for a sizable (a few-fold) enhancement of the magneto-optical Kerr effect (MOKE) magnitude. We base our calculations on the transfer matrix method assuming realistic, and optimal with respect to a sample growth, parameters. We investigate representative cases of (Ga,Mn)N or (Cd,Mn)Te DMS layers deposited on the top of a respectively GaN- or CdTe-based distributed Bragg reflector, and highlight the applicability of the proposed design for both: III-V wurtzite and II-VI zinc-blende DMS.
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Submitted 14 January, 2013;
originally announced January 2013.
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Influence of s,p-d and s-p exchange couplings on exciton splitting in (Zn,Mn)O
Authors:
W. Pacuski,
J. Suffczynski,
P. Osewski,
P. Kossacki,
A. Golnik,
J. A. Gaj,
C. Deparis,
C. Morhain,
E. Chikoidze,
Y. Dumont,
D. Ferrand,
J. Cibert,
T. Dietl
Abstract:
This work presents results of near-band gap magnetooptical studies on (Zn,Mn)O epitaxial layers. We observe excitonic transitions in reflectivity and photoluminescence, that shift towards higher energies when the Mn concentration increases and split nonlinearly under the magnetic field. Excitonic shifts are determined by the s,p-d exchange coupling to magnetic ions, by the electron-hole s-p exchan…
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This work presents results of near-band gap magnetooptical studies on (Zn,Mn)O epitaxial layers. We observe excitonic transitions in reflectivity and photoluminescence, that shift towards higher energies when the Mn concentration increases and split nonlinearly under the magnetic field. Excitonic shifts are determined by the s,p-d exchange coupling to magnetic ions, by the electron-hole s-p exchange, and the spin-orbit interactions. A quantitative description of the magnetoreflectivity findings indicates that the free excitons A and B are associated with the Gamma_7 and Gamma_9 valence bands, respectively, the order reversed as compared to wurtzite GaN. Furthermore, our results show that the magnitude of the giant exciton splittings, specific to dilute magnetic semiconductors, is unusual: the magnetoreflectivity data is described by an effective exchange energy N_0(beta-alpha)=+0.2+/-0.1 eV, what points to small and positive N_0 beta. It is shown that both the increase of the gap with x and the small positive value of the exchange energy N_0 beta corroborate recent theory describing the exchange splitting of the valence band in a non-perturbative way, suitable for the case of a strong p-d hybridization.
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Submitted 10 May, 2011;
originally announced May 2011.
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Effects of s,p - d and s - p exchange interactions probed by exciton magnetospectroscopy in (Ga,Mn)N
Authors:
J. Suffczynski,
A. Grois,
W. Pacuski,
A. Golnik,
J. A. Gaj,
A. Navarro-Quezada,
B. Faina,
T. Devillers,
A. Bonanni
Abstract:
Near band-gap photoluminescence and reflectivity in magnetic field are employed to determine the exchange-induced splitting of free exciton states in paramagnetic wurtzite Ga1-xMnxN, x < 1%, grown on sapphire substrates by metal-organic vapor phase epitaxy. The band gap is found to increase with x. The giant Zeeman splitting of all three excitons A, B and C is resolved, enabling the determination…
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Near band-gap photoluminescence and reflectivity in magnetic field are employed to determine the exchange-induced splitting of free exciton states in paramagnetic wurtzite Ga1-xMnxN, x < 1%, grown on sapphire substrates by metal-organic vapor phase epitaxy. The band gap is found to increase with x. The giant Zeeman splitting of all three excitons A, B and C is resolved, enabling the determination of the apparent exchange integrals N0alpha(app) = 0.0 +/- 0.1 eV and N0beta(app) = +0.8 +/- 0.2 eV. These non-standard values and signs of the s - d and p - d exchange energies are explained in terms of recent theories that suggest a contribution of the electron-hole exchange to the spin splitting of the conduction band and a renormalization of the free hole spin-splitting by a large p - d hybridization. According to these models, in the limit of a strong p - d coupling, the band gap of (Ga,Mn)N increases with x and the order of hole spin subbands is reversed, as observed.
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Submitted 22 November, 2010;
originally announced November 2010.
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Experimental probing of exchange interactions between localized spins in the dilute magnetic insulator (Ga,Mn)N
Authors:
A. Bonanni,
M. Sawicki,
T. Devillers,
W. Stefanowicz,
B. Faina,
Tian Li,
T. E. Winkler,
D. Sztenkiel,
A. Navarro-Quezada,
M. Rovezzi,
R. Jakiela,
A. Grois,
M. Wegscheider,
W. Jantsch,
J. Suffczynski,
F. D'Acapito,
A. Meingast,
G. Kothleitner,
T. Dietl
Abstract:
The sign, magnitude, and range of the exchange couplings between pairs of Mn ions is determined for (Ga,Mn)N and (Ga,Mn)N:Si with x < 3%. The samples have been grown by metalorganic vapor phase epitaxy and characterized by secondary-ion mass spectroscopy; high-resolution transmission electron microscopy with capabilities allowing for chemical analysis, including the annular dark-field mode and ele…
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The sign, magnitude, and range of the exchange couplings between pairs of Mn ions is determined for (Ga,Mn)N and (Ga,Mn)N:Si with x < 3%. The samples have been grown by metalorganic vapor phase epitaxy and characterized by secondary-ion mass spectroscopy; high-resolution transmission electron microscopy with capabilities allowing for chemical analysis, including the annular dark-field mode and electron energy loss spectroscopy; high-resolution and synchrotron x-ray diffraction; synchrotron extended x-ray absorption fine-structure; synchrotron x-ray absorption near-edge structure; infra-red optics and electron spin resonance. The results of high resolution magnetic measurements and their quantitative interpretation have allowed to verify a series of ab initio predictions on the possibility of ferromagnetism in dilute magnetic insulators and to demonstrate that the interaction changes from ferromagnetic to antiferromagnetic when the charge state of the Mn ions is reduced from 3+ to 2+.
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Submitted 20 June, 2011; v1 submitted 12 August, 2010;
originally announced August 2010.
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Origin of the emission within the cavity mode of coupled quantum dot-cavity systems
Authors:
J. Suffczynski,
A. Dousse,
K. Gauthron,
A. Lemaitre,
I. Sagnes,
L. Lanco,
P. Voisin,
J. Bloch,
P. Senellart
Abstract:
The origin of the emission within the optical mode of a coupled quantum dot-micropillar system is investigated. Time-resolved photoluminescence is performed on a large number of deterministically coupled devices in a wide range of temperature and detuning. The emission within the cavity mode is found to exhibit the same dynamics as the spectrally closest quantum dot state. Our observations indic…
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The origin of the emission within the optical mode of a coupled quantum dot-micropillar system is investigated. Time-resolved photoluminescence is performed on a large number of deterministically coupled devices in a wide range of temperature and detuning. The emission within the cavity mode is found to exhibit the same dynamics as the spectrally closest quantum dot state. Our observations indicate that fast dephasing of the quantum dot state is responsible for the emission within the cavity mode. An explanation for recent photon correlation measurements reported on similar systems is proposed.
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Submitted 1 April, 2009;
originally announced April 2009.
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Optically induced energy and spin transfer in non-resonantly coupled pairs of self-assembled CdTe/ZnTe quantum dots
Authors:
T. Kazimierczuk,
J. Suffczynski,
P. Wojnar,
A. Golnik,
J. A. Gaj,
P. Kossacki
Abstract:
Asymmetrical horizontal interdot coupling was demonstrated to exist in a system of a single plane of self-assembled CdTe/ZnTe quantum dots. Photoluminescence excitation (PLE), second order photon correlation and optical orientation were used as main experimental tools. Each individual absorbing dot was identified by a sharp PLE resonance, assigned to neutral exciton transition, while the corresp…
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Asymmetrical horizontal interdot coupling was demonstrated to exist in a system of a single plane of self-assembled CdTe/ZnTe quantum dots. Photoluminescence excitation (PLE), second order photon correlation and optical orientation were used as main experimental tools. Each individual absorbing dot was identified by a sharp PLE resonance, assigned to neutral exciton transition, while the corresponding emission contained several excitonic transitions of different charge states in another single quantum dot different from the absorbing one. Energy and spin transfer dynamics were studied. A high efficiency of spin transfer was found from optical orientation in a vertical magnetic field (70%) as well as without the magnetic field (40%), in spite of a significant anisotropic exchange splitting of the absorbing dot. Coherent mechanism of linear-to-circular polarization conversion was identified, with an efficiency (43%) close to the theoretical limit of 50%.
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Submitted 12 August, 2008;
originally announced August 2008.
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Controlled light-matter coupling for a single quantum dot embedded in a pillar microcavity using far-field optical lithography
Authors:
A. Dousse,
L. Lanco,
J. Suffczynski,
E. Semenova,
A. Miard,
A. Lemaitre,
I. Sagnes,
C. Roblin,
J. Bloch,
P. Senellart
Abstract:
Using far field optical lithography, a single quantum dot is positioned within a pillar microcavity with a 50 nm accuracy. The lithography is performed in-situ at 10 K while measuring the quantum dot emission. Deterministic spectral and spatial matching of the cavity-dot system is achieved in a single step process and evidenced by the observation of strong Purcell effect. Deterministic coupling…
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Using far field optical lithography, a single quantum dot is positioned within a pillar microcavity with a 50 nm accuracy. The lithography is performed in-situ at 10 K while measuring the quantum dot emission. Deterministic spectral and spatial matching of the cavity-dot system is achieved in a single step process and evidenced by the observation of strong Purcell effect. Deterministic coupling of two quantum dots to the same optical mode is achieved, a milestone for quantum computing.
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Submitted 5 January, 2009; v1 submitted 28 July, 2008;
originally announced July 2008.
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Single spin optical read-out in CdTe/ZnTe quantum dot studied by photon correlation spectroscopy
Authors:
J. Suffczynski,
K. Kowalik,
T. Kazimierczuk,
A. Trajnerowicz,
M. Goryca,
P. Kossacki,
A. Golnik,
M. Nawrocki,
J. A. Gaj
Abstract:
Spin dynamics of a single electron and an exciton confined in CdTe/ZnTe quantum dot is investigated by polarization-resolved correlation spectroscopy. Spin memory effects extending over at least a few tens of nanoseconds have been directly observed in magnetic field and described quantitatively in terms of a simple rate equation model. We demonstrate an effective (68%) all-optical read-out of th…
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Spin dynamics of a single electron and an exciton confined in CdTe/ZnTe quantum dot is investigated by polarization-resolved correlation spectroscopy. Spin memory effects extending over at least a few tens of nanoseconds have been directly observed in magnetic field and described quantitatively in terms of a simple rate equation model. We demonstrate an effective (68%) all-optical read-out of the single carrier spin state through probing the degree of circular polarization of exciton emission after capture of an oppositely charged carrier. The perturbation introduced by the pulsed optical excitation serving to study the spin dynamics has been found to be the main source of the polarization loss in the read-out process. In the limit of low laser power the read-out efficiency extrapolates to a value close to 100%. The measurements allowed us as well to determine neutral exciton spin relaxation time ranging from 3.4 +/- 0.1 ns at B = 0 T to 16 +/- 3 ns at B = 5 T.
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Submitted 31 May, 2008;
originally announced June 2008.
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Manipulating the exciton fine structure of single CdTe/ZnTe quantum dots by an in-plane magnetic field
Authors:
K. Kowalik,
O. Krebs,
A. Golnik,
J. Suffczynski,
P. Wojnar,
J. Kossut,
J. A. Gaj,
P. Voisin
Abstract:
Polarization resolved photoluminescence (PL) spectroscopy of individual CdTe/ZnTe quantum dots is investigated in the presence of external in-plane magnetic field. We find that the excitonic fine structure strongly depends on the magnitude and direction of applied field. The splitting between "bright" and "dark" states increases with the magnetic field, whereas the anisotropic exchange splitting…
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Polarization resolved photoluminescence (PL) spectroscopy of individual CdTe/ZnTe quantum dots is investigated in the presence of external in-plane magnetic field. We find that the excitonic fine structure strongly depends on the magnitude and direction of applied field. The splitting between "bright" and "dark" states increases with the magnetic field, whereas the anisotropic exchange splitting of the bright excitons can be reduced or enhanced, depending on the field direction. Increase (decrease) is observed when the field is applied parallel to the PL polarization direction of the lower (upper) energy exciton. For intermediate fields, we observe a rotation of the PL polarization orientation. The results are discussed in terms of an effective spin Hamiltonian derived for the exciton ground state.
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Submitted 11 October, 2006;
originally announced October 2006.
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Excitation mechanisms of individual CdTe/ZnTe quantum dots studied by photon correlation spectroscopy
Authors:
J. Suffczynski,
T. Kazimierczuk,
M. Goryca,
B. Piechal,
A. Trajnerowicz,
K. Kowalik,
P. Kossacki,
A. Golnik,
K. Korona,
M. Nawrocki,
J. A. Gaj,
G. Karczewski
Abstract:
Systematic measurements of auto- and cross-correlations of photons emitted from individual CdTe/ZnTe quantum dots under pulsed excitation were used to elucidate non-resonant excitation mechanisms in this self-assembled system. Memory effects extending over a few excitation pulses have been detected in agreement with previous reports and quantitatively described by a rate equation model, fitting…
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Systematic measurements of auto- and cross-correlations of photons emitted from individual CdTe/ZnTe quantum dots under pulsed excitation were used to elucidate non-resonant excitation mechanisms in this self-assembled system. Memory effects extending over a few excitation pulses have been detected in agreement with previous reports and quantitatively described by a rate equation model, fitting a complete set of correlation and PL intensity results. The important role of single carrier trap** in the quantum dot was established. An explanation was suggested for the unusually wide antibunching dip observed previously in X-X autocorrelation experiments on quantum dots under cw excitation.
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Submitted 19 April, 2006;
originally announced April 2006.
