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Negative Differential Resistance in Carbon-Based Nanostructures
Authors:
S. A. Evlashin,
M. A. Tarkhov,
D. A. Chernodubov,
A. V. Inyushkin,
A. A. Pilevsky,
P. V. Dyakonov,
A. A. Pavlov,
N. V. Suetin,
I. S. Akhatov,
V. Perebeinos
Abstract:
Nonlinear electrical properties, such as negative differential resistance (NDR), are essential in numerous electrical circuits, including memristors. Several physical origins have been proposed to lead to the NDR phenomena in semiconductor devices in the last more than half a century. Here, we report NDR behavior formation in randomly oriented graphene-like nanostructures up to 37 K and high on-cu…
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Nonlinear electrical properties, such as negative differential resistance (NDR), are essential in numerous electrical circuits, including memristors. Several physical origins have been proposed to lead to the NDR phenomena in semiconductor devices in the last more than half a century. Here, we report NDR behavior formation in randomly oriented graphene-like nanostructures up to 37 K and high on-current density up to 10^5 A/cm^2. Our modeling of the current-voltage characteristics, including the self-heating effects, suggests that strong temperature dependence of the low-bias resistance is responsible for the nonlinear electrical behavior. Our findings open opportunities for the practical realization of the on-demand NDR behavior in nanostructures of 2D and 3D material-based devices via heat management in the conducting films and the underlying substrates.
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Submitted 10 May, 2021; v1 submitted 13 April, 2021;
originally announced April 2021.
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Environmentally friendly method of silicon recycling: synthesis of silica nanoparticles in an aqueous solution
Authors:
J. V. Bondareva,
T. F. Aslyamov,
A. G. Kvashnin,
P. V. Dyakonov,
Y. O. Kuzminova,
Yu. A. Mankelevich,
E. N. Voronina,
S. A. Dagesyan,
A. V. Egorov,
R. A. Khmelnitsky,
M. A. Tarkhov,
N. V. Suetin,
I. S. Akhatov,
S. A. Evlashin
Abstract:
Future decades will experience tons of silicon waste from various sources, with no reliable recycling route. The transformation of bulk silicon into SiO2 nanoparticles is environmentally significant because it provides a way to recycle residual silicon waste. To address the needs of silicon recycling, we develop a top-down approach that achieves 100% conversion of bulk silicon to silica nanopartic…
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Future decades will experience tons of silicon waste from various sources, with no reliable recycling route. The transformation of bulk silicon into SiO2 nanoparticles is environmentally significant because it provides a way to recycle residual silicon waste. To address the needs of silicon recycling, we develop a top-down approach that achieves 100% conversion of bulk silicon to silica nanoparticles with outcome sizes of 8-50 nm. In addition to upcycling the potential of silica, our method also possesses several advantages, such as simplicity, scalability and controllable particle size distribution. Many fields of science and manufacturing, such as optics, photonics, medical, and mechanical applications, require size-controllable fabrication of silica nanoparticles. We demonstrate that control over temperature and hydrolysis time has a significant impact on the average particle size and distribution shape. Additionally, we unravel the process of nanoparticle formation using a theoretical nucleation model and quantum density functional theory calculations. Our results provide a theoretical and experimental basis for silica nanoparticle fabrication and pave the way for further silicon conservation research.
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Submitted 14 July, 2020;
originally announced July 2020.
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Ambient condition production of high quality reduced graphene oxide
Authors:
Sergey E. Svyakhovskiy,
Fedor S. Fedorov,
Yuri A. Mankelevich,
Pavel V. Dyakonov,
Nikita V. Minaev,
Sarkis A. Dagesyan,
Konstantin I. Maslakov,
Roman A. Khmelnitsky,
Nikolay V. Suetin,
Albert G. Nasibulin,
Iskander Sh. Akhatov,
Stanislav A. Evlashin
Abstract:
Reduced graphene oxide becomes one of the most popular materials for applications in various optical, electronic and sensor devices. Even though many methods have been already reported for reduced graphene oxide synthesis, they usually rise issues related to their efficiency, quality and environmental impact. This work demonstrates a simple, environmentally friendly and effective method for reduci…
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Reduced graphene oxide becomes one of the most popular materials for applications in various optical, electronic and sensor devices. Even though many methods have been already reported for reduced graphene oxide synthesis, they usually rise issues related to their efficiency, quality and environmental impact. This work demonstrates a simple, environmentally friendly and effective method for reducing graphene oxide under ambient conditions using nanosecond infrared laser irradiation. As a result, a Raman band intensity ratio of I(G)/I(D) of 4.59 was achieved with an average crystallite size of ~90 nm. This graphene is of higher quality than what can be achieved with most of the existing methods. Additionally, the demonstrated reduction technique allows the selective reduction of graphene oxide and control the amount of functional groups on the surface of the material. Gas sensors fabricated according to the proposed technique efficiently detect NO$_2$, NH$_3$, and H$_2$S with the sensitivity down to 10 ppm.
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Submitted 7 May, 2018; v1 submitted 28 April, 2018;
originally announced April 2018.
