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Two-photon interference and coherent control of single InAs quantum dot emissions in an Ag-embedded structure
Authors:
X. Liu,
H. Kumano,
H. Nakajima,
S. Odashima,
T. Asano,
T. Kuroda,
I. Suemune
Abstract:
We have recently reported the successful fabrication of bright single-photon sources based on Ag-embedded nanocone structures that incorporate InAs quantum dots. The source had a photon collection efficiency as high as 24.6%. Here we show the results of various types of photonic characterizations of the Ag-embedded nanocone structures that confirm their versatility as regards a broad range of quan…
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We have recently reported the successful fabrication of bright single-photon sources based on Ag-embedded nanocone structures that incorporate InAs quantum dots. The source had a photon collection efficiency as high as 24.6%. Here we show the results of various types of photonic characterizations of the Ag-embedded nanocone structures that confirm their versatility as regards a broad range of quantum optical applications. We measure the first-order autocorrelation function to evaluate the coherence time of emitted photons, and the second-order correlation function, which reveals the strong suppression of multiple photon generation. The high indistinguishability of emitted photons is shown by the Hong-Ou-Mandel-type two-photon interference. With quasi-resonant excitation, coherent population flop** is demonstrated through Rabi oscillations. Extremely high single-photon purity with a $g^{(2)}$(0) value of 0.008 is achieved with $π$-pulse quasi-resonant excitation.
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Submitted 14 July, 2014;
originally announced July 2014.
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Nonlocal biphoton generation in Werner state from a single semiconductor quantum dot
Authors:
H. Kumano,
H. Nakajima,
T. Kuroda,
T. Mano,
K. Sakoda,
I. Suemune
Abstract:
We demonstrate Werner-like polarization-entangled state generation disapproving local hidden variable theory from a single semiconductor quantum dot. By exploiting tomographic analysis with temporal gating, we find biphoton states are mapped on the Werner state, which is crucial for quantum information applications due to its versatile ramifications such as usefulness to teleportation. Observed ti…
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We demonstrate Werner-like polarization-entangled state generation disapproving local hidden variable theory from a single semiconductor quantum dot. By exploiting tomographic analysis with temporal gating, we find biphoton states are mapped on the Werner state, which is crucial for quantum information applications due to its versatile ramifications such as usefulness to teleportation. Observed time evolution of the biphoton state brings us systematic understanding on a relationship between tomographically reconstructed biphoton state and a set of parameters characterizing exciton state including fine-structure splitting and cross-dephasing time.
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Submitted 1 August, 2014; v1 submitted 26 June, 2014;
originally announced June 2014.
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Vanishing fine structure splittings in telecom wavelength quantum dots grown on (111)A surfaces by droplet epitaxy
Authors:
X. Liu,
N. Ha,
H. Nakajima,
T. Mano,
T. Kuroda,
B. Urbaszek,
H. Kumano,
I. Suemune,
Y. Sakuma,
K. Sakoda
Abstract:
The emission cascade of a single quantum dot is a promising source of entangled photons. A prerequisite for this source is the use of a symmetric dot analogous to an atom in a vacuum, but the simultaneous achievement of structural symmetry and emission in a telecom band poses a challenge. Here we report the growth and characterization of highly symmetric InAs/InAlAs quantum dots self-assembled on…
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The emission cascade of a single quantum dot is a promising source of entangled photons. A prerequisite for this source is the use of a symmetric dot analogous to an atom in a vacuum, but the simultaneous achievement of structural symmetry and emission in a telecom band poses a challenge. Here we report the growth and characterization of highly symmetric InAs/InAlAs quantum dots self-assembled on C3v symmetric InP(111)A. The broad emission spectra cover the O (1.3 micron-m), C (1.55 micron-m), and L (1.6 micron-m) telecom bands. The distribution of the fine-structure splittings is considerably smaller than those reported in previous works on dots at similar wavelengths. The presence of dots with degenerate exciton lines is further confirmed by the optical orientation technique. Thus, our dot systems are expected to serve as efficient entangled photon emitters for long-distance fiber-based quantum key distribution.
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Submitted 17 June, 2014;
originally announced June 2014.
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Carrier flow and nonequilibrium superconductivity in superconductor-based light-emitting diode
Authors:
Ryotaro Inoue,
Hideaki Takayanagi,
Tatsushi Akazaki,
Kazunori Tanaka,
Hirotaka Sasakura,
Ikuo Suemune
Abstract:
Superconductor-based light-emitting diode (superconductor-based LED) in strong light-confinement regime are characterized as a superconductor-based three-terminal device, and its transport properties are quantitatively investigated. In the gate-controlled region, we confirm the realization of new-type Josephson field effect transistor (JoFET) performance, where the channel cross-sectional area of…
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Superconductor-based light-emitting diode (superconductor-based LED) in strong light-confinement regime are characterized as a superconductor-based three-terminal device, and its transport properties are quantitatively investigated. In the gate-controlled region, we confirm the realization of new-type Josephson field effect transistor (JoFET) performance, where the channel cross-sectional area of the junction is directly modulated by the gate voltage. In the current-injected region, the superconducting critical current of $μ$A order in the Josephson junction is found to be modulated by the steady current injection of pA order. This ultrahigh monitoring sensitivity of the radiative recombination process can be explained by taking into account the fact that the energy relaxation of the absorbed photons causes the conversion of superconducting pairs to quasiparticles in the active layer. Using quasiparticle density and superconducting pair density, we discuss the carrier flows together with the non-equilibrium superconductovity in the active layer and the superconducting electrodes, which take place for compensating the conversion.
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Submitted 8 December, 2013; v1 submitted 11 April, 2013;
originally announced April 2013.
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Symmetric quantum dots as efficient sources of highly entangled photons
Authors:
T. Kuroda,
T. Mano,
N. Ha,
H. Nakajima,
H. Kumano,
B. Urbaszek,
M. Jo,
M. Abbarachi,
Y. Sakuma,
K. Sakoda,
I. Suemune,
X. Marie,
T. Amand
Abstract:
An ideal source of entangled photon pairs combines the perfect symmetry of an atom with the convenient electrical trigger of light sources based on semiconductor quantum dots. We create a naturally symmetric quantum dot cascade that emits highly entangled photon pairs on demand. Our source consists of strain-free GaAs dots self-assembled on a triangular symmetric (111)A surface. The emitted photon…
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An ideal source of entangled photon pairs combines the perfect symmetry of an atom with the convenient electrical trigger of light sources based on semiconductor quantum dots. We create a naturally symmetric quantum dot cascade that emits highly entangled photon pairs on demand. Our source consists of strain-free GaAs dots self-assembled on a triangular symmetric (111)A surface. The emitted photons strongly violate Bell's inequality and reveal a fidelity to the Bell state as high as 86 (+-2) % without postselection. This result is an important step towards scalable quantum-communication applications with efficient sources.
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Submitted 26 February, 2013;
originally announced February 2013.
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Bidirectional photon extraction from an epitaxially grown semiconductor quantum dot sandwiched by single mode optical fibers
Authors:
H. Sasakura,
X. Liu,
S. Odashima,
H. Kumano,
S. Muto,
I. Suemune
Abstract:
Fiber-based bidirectional photon extraction from nanoscale emitters and photon antibunching behavior between two outputs of two single mode optical fibers are experimentally demonstrated. Flakes of the epitaxial layer containing the InAs quantum dots (QDs) are fixed mechanically by both side with the edge faces of the single-mode-fiber (SMF) patch cables. The emitting photons from the single quant…
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Fiber-based bidirectional photon extraction from nanoscale emitters and photon antibunching behavior between two outputs of two single mode optical fibers are experimentally demonstrated. Flakes of the epitaxial layer containing the InAs quantum dots (QDs) are fixed mechanically by both side with the edge faces of the single-mode-fiber (SMF) patch cables. The emitting photons from the single quantum dot are directly taken out of both side through the SMFs. Single-photon emission between two SMF outputs is confirmed by detecting non-classical antibunching in second-order photon correlation measurements with two superconducting single-photon detectors (SSPDs) and a time-amplitude converter (TAC). This simple opto-mechanical alignment-free single-photon emitter has advantage of robust stability more than 10 days and low-cost fabrication.
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Submitted 14 October, 2012; v1 submitted 11 October, 2012;
originally announced October 2012.
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Anomalous dip observed in intensity autocorrelation function as an inherent nature of single-photon emitters
Authors:
Hideaki Nakajima,
Hidekazu Kumano,
Hitoshi Iijima,
Ikuo Suemune
Abstract:
We report the observation of an anomalous antibunching dip in intensity autocorrelation function with photon correlation measurements on a single-photon emitter (SPE). We show that the anomalous dip observed is a manifestation of quantum nature of SPEs. Taking population dynamics in a quantum two-level system into account correctly, we redefine intensity autocorrelation function. This is of primar…
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We report the observation of an anomalous antibunching dip in intensity autocorrelation function with photon correlation measurements on a single-photon emitter (SPE). We show that the anomalous dip observed is a manifestation of quantum nature of SPEs. Taking population dynamics in a quantum two-level system into account correctly, we redefine intensity autocorrelation function. This is of primary importance for precisely evaluating the lowest-level probability of multiphoton generation in SPEs toward realizing versatile pure SPEs for quantum information and communication.
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Submitted 27 July, 2012;
originally announced July 2012.
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Inter-dot coupling and excitation transfer mechanisms of telecommunication band InAs quantum dots at elevated temperatures
Authors:
C. Hermannstädter,
N. A. Jahan,
J. -H. Huh,
H. Sasakura,
K. Akahane,
M. Sasaki,
I. Suemune
Abstract:
We investigate the photoluminescence temperature dependence of individual InAs/InGaAlAs quantum dots emitting in the optical telecommunication bands. The high-density dots are grown on InP substrates and the selection of a smaller dot number is done by the processing of suitable nanometer sized mesas. Using ensembles of only a few dots inside such mesas, their temperature stability, inter-dot char…
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We investigate the photoluminescence temperature dependence of individual InAs/InGaAlAs quantum dots emitting in the optical telecommunication bands. The high-density dots are grown on InP substrates and the selection of a smaller dot number is done by the processing of suitable nanometer sized mesas. Using ensembles of only a few dots inside such mesas, their temperature stability, inter-dot charge transfer, as well as, carrier capture and escape mechanisms out of the dots are investigated systematically. This includes the discussion of the dot ensemble and individual dots. Among the single-dot properties, we investigate the transition of emission lines from zero-phonon line to acoustic phonon sideband dominated line shape with temperature. Moreover, the presence of single recombination lines up to temperatures of around 150 K is demonstrated.
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Submitted 13 February, 2012; v1 submitted 7 February, 2012;
originally announced February 2012.
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Telecommunication band InAs quantum dots and dashes embedded in different barrier materials
Authors:
Nahid A Jahan,
Claus Hermannstädter,
Jae-Hoon Huh,
Hirotaka Sasakura,
Thomas J Rotter,
Pankaj Ahirwar,
Ganesh Balakrishnan,
Kouichi Akahane,
Masahide Sasaki,
Hidekazu Kumano,
Ikuo Suemune
Abstract:
We investigate the long wavelength (1.2 to 1.55 micro-m) photoluminescence of high-density InAs quantum dots and dashes, which were grown on InP substrates. We analyze the temperature dependence of the recombination and carrier distribution on the alloy composition of the barrier materials, InGaAlAs, and on the existence of a wetting layer. Carrier escape and transfer are discussed based on temper…
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We investigate the long wavelength (1.2 to 1.55 micro-m) photoluminescence of high-density InAs quantum dots and dashes, which were grown on InP substrates. We analyze the temperature dependence of the recombination and carrier distribution on the alloy composition of the barrier materials, InGaAlAs, and on the existence of a wetting layer. Carrier escape and transfer are discussed based on temperature dependent photoluminescence measurements and theoretical considerations about the heterostructures' confinement energies and band structure. We propose two different contributions to the thermal quenching, which can explain the observations for both the quantum dot and dash samples. Among these one is a unique phenomenon for high density quantum dot/dash ensembles which is related to significant inter-dot/dash coupling. With the goal ahead to use these dots and dashes for quantum optical applications on the single-dot/dash level in the telecommunication C band as well as at elevated temperatures we present first steps towards the realization of such devices.
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Submitted 7 February, 2012;
originally announced February 2012.
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Longitudinal and transverse exciton spin relaxation times in single InP/InAsP/InP nanowire quantum dots
Authors:
H. Sasakura,
C. Hermannstädter,
S. N. Dorenbos,
N. Akopian,
M. P. van Kouwen,
J. Motohisa,
Y. Kobayashi,
H. Kumano,
K. Kondo,
K. Tomioka,
T. Fukui,
I. Suemune,
V. Zwiller
Abstract:
We have investigated the optical properties of a single InAsP quantum dot embedded in a standing InP nanowire. A regular array of nanowires was fabricated by epitaxial growth and electron-beam patterning. The elongation of transverse exciton spin relaxation time of the exciton state with decreasing excitation power was observed by first-order photon correlation measurements. This behavior is well…
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We have investigated the optical properties of a single InAsP quantum dot embedded in a standing InP nanowire. A regular array of nanowires was fabricated by epitaxial growth and electron-beam patterning. The elongation of transverse exciton spin relaxation time of the exciton state with decreasing excitation power was observed by first-order photon correlation measurements. This behavior is well explained by the motional narrowing mechanism induced by Gaussian fluctuations of environmental charges in the InP nanowire. The longitudinal exciton spin relaxation time was evaluated by the degree of the random polarization of emission originating from exciton state confined in a single nanowire quantum dots by using Mueller Calculus based on Stokes parameters representation.
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Submitted 29 September, 2011;
originally announced September 2011.
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Transport properties of Andreev polarons in superconductor-semiconductor-superconductor junction with superlattice structure
Authors:
Ryotaro Inoue,
Kenta Muranaga,
Hideaki Takayanagi,
Eiichi Hanamura,
Masafumi Jo,
Tatsushi Akazaki,
Ikuo Suemune
Abstract:
Transport properties of a superconductor-semiconductor-superconductor (S-Sm-S) junction with superlattice structure are investigated. Differential resistance as a function of voltage shows oscillatory behavior under the irradiation of radio-frequency (RF) waves with the specific frequency of 1.77 GHz regardless of the superconducting materials and the junction lengths. Experimental data are quanti…
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Transport properties of a superconductor-semiconductor-superconductor (S-Sm-S) junction with superlattice structure are investigated. Differential resistance as a function of voltage shows oscillatory behavior under the irradiation of radio-frequency (RF) waves with the specific frequency of 1.77 GHz regardless of the superconducting materials and the junction lengths. Experimental data are quantitatively explained in terms of the coupling of superconducting quasiparticles with long-wavelength acoustic phonons indirectly excited by the RF waves. We propose that the strong coupling causes the formation of novel composite particles, Andreev polarons.
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Submitted 10 March, 2011; v1 submitted 3 September, 2010;
originally announced September 2010.
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A Cooper pair light emitting diode
Authors:
H. Sasakura,
S. Kuramitsu,
Y. Hayashi,
K. Tanaka,
T. Akazaki,
E. Hanamura,
R. Inoue,
H. Takayanagi,
Y. Asano,
I. Suemune
Abstract:
We demonstrate Cooper-pair's drastic enhancement effect on band-to-band radiative recombination in a semiconductor. Electron Cooper pairs injected from a superconducting electrode into an active layer by the proximity effect recombine with holes injected from a p-type electrode and dramatically accelerate the photon generation rates of a light emitting diode in the optical-fiber communication ba…
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We demonstrate Cooper-pair's drastic enhancement effect on band-to-band radiative recombination in a semiconductor. Electron Cooper pairs injected from a superconducting electrode into an active layer by the proximity effect recombine with holes injected from a p-type electrode and dramatically accelerate the photon generation rates of a light emitting diode in the optical-fiber communication band. Cooper pairs are the condensation of electrons at a spin-singlet quantum state and this condensation leads to the observed enhancement of the electric-dipole transitions. Our results indicate the possibility to open up new interdisciplinary fields between superconductivity and optoelectronics.
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Submitted 27 October, 2009;
originally announced October 2009.
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Single photon interference between two modes originated from a single quantum dot
Authors:
H. Kumano,
S. Ekuni,
H. Nakajima,
M. Jo,
H. Sasakura,
S. Adachi,
S. Muto,
I. Suemune
Abstract:
Interference of a single photon generated from a single quantum dot is observed between two photon polarization modes. Each emitted single photon has two orthogonal polarization modes associated with the solid-state single photon source, in which two non-degenerate neutral exciton states are involved. The interference between the two modes takes place only under the condition that the emitted ph…
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Interference of a single photon generated from a single quantum dot is observed between two photon polarization modes. Each emitted single photon has two orthogonal polarization modes associated with the solid-state single photon source, in which two non-degenerate neutral exciton states are involved. The interference between the two modes takes place only under the condition that the emitted photon is free from which-mode information.
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Submitted 3 September, 2009; v1 submitted 12 August, 2009;
originally announced August 2009.
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Luminescence of a Cooper Pair
Authors:
Yasuhiro Asano,
Ikuo Suemune,
Hideaki Takayanagi,
Eiichi Hanamura
Abstract:
This paper theoretically discusses the photon emission spectra of a superconducting pn-junction. On the basis of the second order perturbation theory for electron-photon interaction, we show that the recombination of a Cooper with two p-type carriers causes drastic enhancement of the luminescence intensity. The calculated results of photon emission spectra explain characteristic features of obse…
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This paper theoretically discusses the photon emission spectra of a superconducting pn-junction. On the basis of the second order perturbation theory for electron-photon interaction, we show that the recombination of a Cooper with two p-type carriers causes drastic enhancement of the luminescence intensity. The calculated results of photon emission spectra explain characteristic features of observed signal in an recent experiment. Our results indicate high functionalities of superconducting light-emitting devices.
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Submitted 8 May, 2009;
originally announced May 2009.
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Optical-phonon mediated exciton energy relaxation with highly preserved spin states Optical-phonon mediated exciton energy relaxation with highly preserved spin states in a single quantum dot
Authors:
H. Kumano,
H. Kobayashi,
S. Ekuni,
Y. Hayashi,
M. Jo,
H. Sasakura,
S. Adachi,
S. Muto,
I. Suemune
Abstract:
High degree of preservation of spin states during energy relaxation processes mediated by optical phonons is demonstrated in a single quantum dot. Optical-phonon resonance and relevant suppression of spin relaxation are clearly identified as dip structures in photoluminescence excitation spectra probed by the positive trion emission. The absence of continuum states makes this observation possibl…
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High degree of preservation of spin states during energy relaxation processes mediated by optical phonons is demonstrated in a single quantum dot. Optical-phonon resonance and relevant suppression of spin relaxation are clearly identified as dip structures in photoluminescence excitation spectra probed by the positive trion emission. The absence of continuum states makes this observation possible under the cross-circularly polarized detection with respect to a circularly polarized pum**. Consequently, distinguishably high degree of circular polarization up to ~0.85 is achieved without applying external magnetic field at the optical-phonon resonance. Rate equation analysis reveals that the spin-flip probability during energy relaxation is restricted to less than 7.5%. It is also indicated that the spin flip time of the positive trion ground state is extended by more than 3 times compared with that of neutral exciton ground state. This corresponds to the spin flip time longer than 11 ns for the positive trion ground state. The influence of nuclear polarization to the present measurements is also discussed.
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Submitted 7 March, 2008;
originally announced March 2008.
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Anisotropic lattice deformation of InAs self-assembled quantum dots embedded in GaNAs strain compensating layers
Authors:
Naoki Matsumura,
Shunichi Muto,
Sasilaka Ganapathy,
Ikuo Suemune,
Ken Numata,
Konami Yabuta
Abstract:
Lattice deformations of InAs self-assembled quantum dots, which were grown on (001) GaAs substrates and embedded in GaNAs strain compensating layers (SCLs), were examined with an ion-channeling method in Rutherford backscattering spectrometry. The channeling experiments demonstrated that the increase of the nitrogen concentrations in the GaNAs SCLs caused the indium lattice displacements along t…
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Lattice deformations of InAs self-assembled quantum dots, which were grown on (001) GaAs substrates and embedded in GaNAs strain compensating layers (SCLs), were examined with an ion-channeling method in Rutherford backscattering spectrometry. The channeling experiments demonstrated that the increase of the nitrogen concentrations in the GaNAs SCLs caused the indium lattice displacements along the [001] growth direction while those parallel to the (001) crystal plane were kept unchanged
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Submitted 28 December, 2004;
originally announced December 2004.
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Photon-spin qubit-conversion based on Overhauser shift of Zeeman energies in quantum dots
Authors:
S. Muto,
S. Adachi,
T. Yokoi,
H. Sasakura,
I. Suemune
Abstract:
We propose a new method to realize a conversion of photon qubit and spin qubit using the effective magnetic field created by the nuclear polarization known as Overhauser field. We discuss its preliminary experiment on InAlAs/AlGaAs self-assembled quantum dot and also discuss effects of excitons which could destroy the conversion.
We propose a new method to realize a conversion of photon qubit and spin qubit using the effective magnetic field created by the nuclear polarization known as Overhauser field. We discuss its preliminary experiment on InAlAs/AlGaAs self-assembled quantum dot and also discuss effects of excitons which could destroy the conversion.
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Submitted 1 December, 2004;
originally announced December 2004.
