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Image processing-based domain-matching simulation for heteroepitaxy
Authors:
Takamitsu Ishiyama,
Takashi Suemasu,
Kaoru Toko
Abstract:
Heteroepitaxy of functional thin films on single-crystal substrates is one of the most general themes in electronic materials research. Here, we propose an algorithm based on image processing for the rapid simulation of heteroepitaxial relationships. The superposition and rotation of various lattice plane images of the film and substrate, which were automatically generated from the crystal structu…
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Heteroepitaxy of functional thin films on single-crystal substrates is one of the most general themes in electronic materials research. Here, we propose an algorithm based on image processing for the rapid simulation of heteroepitaxial relationships. The superposition and rotation of various lattice plane images of the film and substrate, which were automatically generated from the crystal structure, rapidly verified all domain matching patterns. Furthermore, the comprehensive validation allowed us to discuss domain matching from multiple perspectives, such as mismatch, matching period, and density of matching lattice points. Therefore, the proposed algorithm will contribute to materials informatics, streamlining a wide range of materials research for functional thin films.
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Submitted 15 May, 2022;
originally announced May 2022.
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Current-driven domain wall dynamics in ferrimagnetic Ni-doped Mn4N films : very large domain wall velocities and reversal of motion direction across the magnetic compensation point
Authors:
Sambit Ghosh,
Taro Komori,
Ali Hallal,
Jose Peña Garcia,
Toshiki Gushi,
Taku Hirose,
Haruka Mitarai,
Hanako Okuno,
Jan Vogel,
Mairbek Chshiev,
Jean-Philippe Attané,
Laurent Vila,
Takashi Suemasu,
Stefania Pizzini
Abstract:
Spin-transfer torque (STT) and spin-orbit torque (SOT) are spintronic phenomena allowing magnetization manipulation using electrical currents. Beyond their fundamental interest, they allow develo** new classes of magnetic memories and logic devices, in particular based on domain wall (DW) motion. In this work, we report the study of STT driven DW motion in ferrimagnetic manganese nickel nitride…
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Spin-transfer torque (STT) and spin-orbit torque (SOT) are spintronic phenomena allowing magnetization manipulation using electrical currents. Beyond their fundamental interest, they allow develo** new classes of magnetic memories and logic devices, in particular based on domain wall (DW) motion. In this work, we report the study of STT driven DW motion in ferrimagnetic manganese nickel nitride (Mn4-xNixN) films, in which a fine adjustment of the Ni content allows setting the magnetic compensation at room temperature. The reduced magnetization, combined with the large spin polarization of conduction electrons, strongly enhances the STT so that domain wall velocities approaching 3000 m/s can be obtained for Ni compositions close to the compensation point. In addition, a reversal of the domain wall motion direction is observed when the magnetic compensation composition is crossed. This striking feature, related to the change of direction of the spin polarization with respect to that of the net magnetization, is clarified by ab initio band structure calculations.
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Submitted 11 March, 2021; v1 submitted 11 January, 2021;
originally announced January 2021.
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Mn4N ferrimagnetic thin films for sustainable spintronics
Authors:
T. Gushi,
M. Jovičević Klug,
J. Peña Garcia,
H. Okuno,
J. Vogel,
J. P. Attané,
T. Suemasu,
S. Pizzini,
L. Vila
Abstract:
Spintronics, which is the basis of a low-power, beyond-CMOS technology for computational and memory devices, remains up to now entirely based on critical materials such as Co, heavy metals and rare-earths. Here, we show that Mn4N, a rare-earth free ferrimagnet made of abundant elements, is an exciting candidate for the development of sustainable spintronics devices. Mn4N thin films grown epitaxial…
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Spintronics, which is the basis of a low-power, beyond-CMOS technology for computational and memory devices, remains up to now entirely based on critical materials such as Co, heavy metals and rare-earths. Here, we show that Mn4N, a rare-earth free ferrimagnet made of abundant elements, is an exciting candidate for the development of sustainable spintronics devices. Mn4N thin films grown epitaxially on SrTiO3 substrates possess remarkable properties, such as a perpendicular magnetisation, a very high extraordinary Hall angle (2%) and smooth domain walls, at the millimeter scale. Moreover, domain walls can be moved at record speeds by spin polarised currents, in absence of spin-orbit torques. This can be explained by the large efficiency of the adiabatic spin transfer torque, due to the conjunction of a reduced magnetisation and a large spin polarisation. Finally, we show that the application of gate voltages through the SrTiO3 substrates allows modulating the Mn4N coercive field with a large efficiency.
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Submitted 4 March, 2019; v1 submitted 21 January, 2019;
originally announced January 2019.
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Millimeter-sized magnetic domains in perpendicularly magnetized ferrimagnetic Mn4N thin films grown on SrTiO3
Authors:
Toshiki Gushi,
Laurent Vila,
Olivier Fruchart,
Alain Marty,
Stefania Pizzini,
Jan Vogel,
Fumiya Takata,
Akihito Anzai,
Kaoru Toko,
Takashi Suemasu,
Jean-Philippe Attané
Abstract:
The use of epitaxial layers for domain wall-based spintronic applications is often hampered by the presence of pinning sites. Here, we show that when depositing Mn4N(10 nm) epitaxial films, the replacement of MgO(001) by SrTiO3(001) substrates allows minimizing the misfit, and to obtain an improved crystalline quality, a sharper switching, a full remanence, a high anisotropy and remarkable millime…
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The use of epitaxial layers for domain wall-based spintronic applications is often hampered by the presence of pinning sites. Here, we show that when depositing Mn4N(10 nm) epitaxial films, the replacement of MgO(001) by SrTiO3(001) substrates allows minimizing the misfit, and to obtain an improved crystalline quality, a sharper switching, a full remanence, a high anisotropy and remarkable millimeter-sized magnetic domains, with straight and smooth domain walls. In a context of rising interest for current-induced domain wall motion in rare
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Submitted 31 October, 2018;
originally announced October 2018.
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Magnetic domain walls in nanostrips of single-crystalline $\mathrm{Fe}_4\mathrm{N}(001)$ thin films with fourfold in-plane magnetic anisotropy
Authors:
Keita Ito,
Nicolas Rougemaille,
Stefania Pizzini,
Syuta Honda,
Norio Ota,
Takashi Suemasu,
Olivier Fruchart
Abstract:
We investigated head-to-head domain walls in nanostrips of epitaxial $\mathrm{Fe}_4\mathrm{N}(001)$ thin films, displaying a fourfold magnetic anisotropy. Magnetic force microscopy and micromagnetic simulations show that the domain walls have specific properties, compared to soft magnetic materials. In particular, strips aligned along a hard axis of magnetization are wrapped by partial flux-closur…
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We investigated head-to-head domain walls in nanostrips of epitaxial $\mathrm{Fe}_4\mathrm{N}(001)$ thin films, displaying a fourfold magnetic anisotropy. Magnetic force microscopy and micromagnetic simulations show that the domain walls have specific properties, compared to soft magnetic materials. In particular, strips aligned along a hard axis of magnetization are wrapped by partial flux-closure concertina domains below a critical width, while progressively transforming to zigzag walls for wider strips. Transverse walls are favored upon initial application of a magnetic field transverse to the strip, while transformation to a vortex walls is favored upon motion under a longitudinal magnetic field. In all cases the magnetization texture of such fourfold anisotropy domain walls exhibits narrow micro-domain walls, which may give rise to peculiar spin-transfer features.
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Submitted 23 November, 2015;
originally announced November 2015.
