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From pseudo-direct hexagonal germanium to direct silicon-germanium alloys
Authors:
Pedro Borlido,
Jens Renè Suckert,
Jürgen Furthmüller,
Friedhelm Bechstedt,
Silvana Botti,
Claudia Rödl
Abstract:
We present ab initio calculations of the electronic and optical properties of hexagonal SiGe alloys in the lonsdaleite structure. Lattice constants and electronic band structures in excellent agreement with experiment are obtained using density-functional theory. Hexagonal Si has an indirect band gap, while hexagonal Ge has a pseudo-direct gap, i.e. the optical transitions at the minimum direct ba…
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We present ab initio calculations of the electronic and optical properties of hexagonal SiGe alloys in the lonsdaleite structure. Lattice constants and electronic band structures in excellent agreement with experiment are obtained using density-functional theory. Hexagonal Si has an indirect band gap, while hexagonal Ge has a pseudo-direct gap, i.e. the optical transitions at the minimum direct band gap are very weak. The pseudo-direct character of pure hexagonal Ge is efficiently lifted by alloying. Already for a small admixture of Si, symmetry reduction enhances the oscillator strength of the lowest direct optical transitions. The band gap is direct for a Si content below 45 %. We validate lonsdaleite group-IV alloys to be efficient optical emitters, suitable for integrated optoelectronic applications.
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Submitted 5 May, 2021;
originally announced May 2021.
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Efficient strain-induced light emission in lonsdaleite germanium
Authors:
Jens René Suckert,
Claudia Rödl,
Jürgen Furthmüller,
Friedhelm Bechstedt,
Silvana Botti
Abstract:
Lonsdaleite germanium has a direct band gap, but it is not an efficient light emitter due to the vanishing oscillator strength of electronic transitions at the fundamental gap. Transitions involving the second lowest conduction band are instead at least three orders of magnitude stronger. The inversion of the two lowest conduction bands would therefore make hexagonal germanium ideal for optoelectr…
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Lonsdaleite germanium has a direct band gap, but it is not an efficient light emitter due to the vanishing oscillator strength of electronic transitions at the fundamental gap. Transitions involving the second lowest conduction band are instead at least three orders of magnitude stronger. The inversion of the two lowest conduction bands would therefore make hexagonal germanium ideal for optoelectronic applications. In this work, we investigate the possibility to achieve this band inversion by applying strain. To this end we perform ab initio calculations of the electronic band structure and optical properties of strained hexagonal germanium, using density functional theory with the modified Becke-Johnson exchange-correlation functional and including spin-orbit interaction. We consider hydrostatic pressure, uniaxial strain along the hexagonal c axis, as well as biaxial strain in planes perpendicular to and containing the hexagonal c axis to simulate the effect of a substrate. We find that the conduction-band inversion, and therefore the transition from a pseudo-direct to a direct band gap, is attainable for moderate tensile uniaxial strain parallel to the lonsdaleite c axis.
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Submitted 16 March, 2021; v1 submitted 14 September, 2020;
originally announced September 2020.
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Direct Bandgap Emission from Hexagonal Ge and SiGe Alloys
Authors:
E. M. T. Fadaly,
A. Dijkstra,
J. R. Suckert,
D. Ziss,
M. A. J. v. Tilburg,
C. Mao,
Y. Ren,
V. T. v. Lange,
S. Kölling,
M. A. Verheijen,
D. Busse,
C. Rödl,
J. Furthmüller,
F. Bechstedt,
J. Stangl,
J. J. Finley,
S. Botti,
J. E. M. Haverkort,
E. P. A. M. Bakkers
Abstract:
Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the electronics industry for more than half a century. However, cubic silicon (Si), germanium (Ge) and SiGe-alloys are all indirect bandgap semiconductors that cannot emit light efficiently. Accordingly, achieving efficient light emission from group-IV materials has been a holy grail in silicon technology for decades…
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Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the electronics industry for more than half a century. However, cubic silicon (Si), germanium (Ge) and SiGe-alloys are all indirect bandgap semiconductors that cannot emit light efficiently. Accordingly, achieving efficient light emission from group-IV materials has been a holy grail in silicon technology for decades and, despite tremendous efforts, it has remained elusive. Here, we demonstrate efficient light emission from direct bandgap hexagonal Ge and SiGe alloys. We measure a subnanosecond, temperature-insensitive radiative recombination lifetime and observe a similar emission yield to direct bandgap III-V semiconductors. Moreover, we demonstrate how by controlling the composition of the hexagonal SiGe alloy, the emission wavelength can be continuously tuned in a broad range, while preserving a direct bandgap. Our experimental findings are shown to be in excellent quantitative agreement with the ab initio theory. Hexagonal SiGe embodies an ideal material system to fully unite electronic and optoelectronic functionalities on a single chip, opening the way towards novel device concepts and information processing technologies.
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Submitted 2 November, 2019;
originally announced November 2019.
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Accurate electronic and optical properties of hexagonal germanium for optoelectronic applications
Authors:
Claudia Rödl,
Jürgen Furthmüller,
Jens Renè Suckert,
Valerio Armuzza,
Friedhelm Bechstedt,
Silvana Botti
Abstract:
High-quality defect-free lonsdaleite Si and Ge can now be grown on hexagonal nanowire substrates. These hexagonal phases of group-IV semiconductors have been predicted to exhibit improved electronic and optical properties for optoelectronic applications. While lonsdaleite Si is a well-characterized indirect semiconductor, experimental data and reliable calculations on lonsdaleite Ge are scarce and…
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High-quality defect-free lonsdaleite Si and Ge can now be grown on hexagonal nanowire substrates. These hexagonal phases of group-IV semiconductors have been predicted to exhibit improved electronic and optical properties for optoelectronic applications. While lonsdaleite Si is a well-characterized indirect semiconductor, experimental data and reliable calculations on lonsdaleite Ge are scarce and not consistent regarding the nature of its gap. Using ab initio density-functional theory, we calculate accurate structural, electronic, and optical properties for hexagonal Ge. Given the well-known sensitivity of electronic-structure calculations for Ge to the underlying approximations, we systematically test the performance of several exchange-correlation functionals, including meta-GGA and hybrid functionals. We first validate our approach for cubic Ge, obtaining atomic geometries and band structures in excellent agreement with available experimental data. Then, the same approach is applied to predict electronic and optical properties of lonsdaleite Ge. We portray lonsdaleite Ge as a direct semiconductor with only weakly dipole-active lowest optical transitions, small band gap, huge crystal-field splitting, and strongly anisotropic effective masses. The unexpectedly small direct gap and the oscillator strengths of the lowest optical transitions are explained in terms of symmetry and back-folding of energy bands of the diamond structure.
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Submitted 5 December, 2018;
originally announced December 2018.
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Comparative study of methodologies to compute the intrinsic Gilbert dam**: interrelations, validity and physical consequences
Authors:
Filipe S. M. Guimarães,
J. R. Suckert,
Jonathan Chico,
Juba Bouaziz,
Manuel dos Santos Dias,
Samir Lounis
Abstract:
Relaxation effects are of primary importance in the description of magnetic excitations, leading to a myriad of methods addressing the phenomenological dam** parameters. In this work, we consider several well-established forms of calculating the intrinsic Gilbert dam** within a unified theoretical framework, map** out their connections and the approximations required to derive each formula.…
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Relaxation effects are of primary importance in the description of magnetic excitations, leading to a myriad of methods addressing the phenomenological dam** parameters. In this work, we consider several well-established forms of calculating the intrinsic Gilbert dam** within a unified theoretical framework, map** out their connections and the approximations required to derive each formula. This scheme enables a direct comparison of the different methods on the same footing and a consistent evaluation of their range of validity. Most methods lead to very similar results for the bulk ferromagnets Fe, Co and Ni, due to the low spin-orbit interaction strength and the absence of the spin pum** mechanism. The effects of inhomogeneities, temperature and other sources of finite electronic lifetime are often accounted for by an empirical broadening of the electronic energy levels. We show that the contribution to the dam** introduced by this broadening is additive, and so can be extracted by comparing the results of the calculations performed with and without spin-orbit interaction. Starting from simulated ferromagnetic resonance spectra based on the underlying electronic structure, we unambiguously demonstrate that the dam** parameter obtained within the constant broadening approximation diverges for three-dimensional bulk magnets in the clean limit, while it remains finite for monolayers. Our work puts into perspective the several methods available to describe and compute the Gilbert dam**, building a solid foundation for future investigations of magnetic relaxation effects in any kind of material.
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Submitted 19 December, 2018; v1 submitted 31 July, 2018;
originally announced July 2018.
