Efficient polarization insensitive complex wavefront control using Huygens' metasurfaces based on dielectric resonant meta-atoms
Authors:
Katie E. Chong,
Lei Wang,
Isabelle Staude,
Anthony James,
Jason Dominguez,
Sheng Liu,
Ganapathi S. Subramania,
Manuel Decker,
Dragomir N. Neshev,
Igal Brener,
Yuri S. Kivshar
Abstract:
Subwavelength-thin metasurfaces have shown great promises for the control of optical wavefronts, thus opening new pathways for the development of efficient flat optics. In particular, Huygens' metasurfaces based on all-dielectric resonant meta-atoms have already shown a huge potential for practical applications with their polarization insensitivity and high transmittance efficiency. Here, we exper…
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Subwavelength-thin metasurfaces have shown great promises for the control of optical wavefronts, thus opening new pathways for the development of efficient flat optics. In particular, Huygens' metasurfaces based on all-dielectric resonant meta-atoms have already shown a huge potential for practical applications with their polarization insensitivity and high transmittance efficiency. Here, we experimentally demonstrate a polarization insensitive holographic Huygens' metasurface based on dielectric resonant meta-atoms capable of complex wavefront control at telecom wavelengths. Our metasurface produces a hologram image in the far-field with 82% transmittance efficiency and 40% imaging efficiency. Such efficient complex wavefront control shows that Huygens' metasurfaces based on resonant dielectric meta-atoms are a big step towards practical applications of metasurfaces in wavefront design related technologies, including computer-generated holograms, ultra-thin optics, security and data storage devices.
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Submitted 1 February, 2016;
originally announced February 2016.
Imaging and registration of buried atomic-precision donor devices using scanning capacitance microscopy
Authors:
E. Bussmann,
M. Rudolph,
G. S. Subramania,
S. Misra,
S. M. Carr,
E. Langlois,
J. Dominguez,
T. Pluym,
M. P. Lilly,
M. S. Carroll
Abstract:
We show that a scanning capacitance microscope (SCM) can image buried delta-doped donor nanostructures fabricated in Si via a recently developed atomic-precision scanning tunneling microscopy (STM) lithography technique. A critical challenge in completing atomic-precision nanoelectronic devices is to accurately align mesoscopic metal contacts to the STM defined nanostructures. Utilizing the SCMs a…
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We show that a scanning capacitance microscope (SCM) can image buried delta-doped donor nanostructures fabricated in Si via a recently developed atomic-precision scanning tunneling microscopy (STM) lithography technique. A critical challenge in completing atomic-precision nanoelectronic devices is to accurately align mesoscopic metal contacts to the STM defined nanostructures. Utilizing the SCMs ability to image buried dopant nanostructures, we have developed a technique by which we are able to position metal electrodes on the surface to form contacts to underlying STM fabricated donor nanostructures with a measured accuracy of 300 nm. Low temperature (T=4K) transport measurements confirm successful placement of the contacts to the donor nanostructures.
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Submitted 17 October, 2014;
originally announced October 2014.
