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Tunable spin-flop transition in artificial ferrimagnets
Authors:
N. O. Antropov,
E. A. Kravtsov,
M. V. Makarova,
V. V. Proglyado,
T. Keller,
I. A. Subbotin,
E. M. Pashaev,
G. V. Prutskov,
A. L. Vasiliev,
Yu. M. Chesnokov,
N. G. Bebenin,
V. V. Ustinov,
B. Keimer,
Yu. N. Khaydukov
Abstract:
Spin-flop transition (SFT) consists in a jump-like reversal of antiferromagnetic magnetic moments into a non-collinear state when the magnetic field increases above the critical value. Potentially the SFT can be utilized in many applications of a rapidly develo** antiferromagnetic spintronics. However, the difficulty of using them in conventional antiferromagnets lies in (a) too large switching…
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Spin-flop transition (SFT) consists in a jump-like reversal of antiferromagnetic magnetic moments into a non-collinear state when the magnetic field increases above the critical value. Potentially the SFT can be utilized in many applications of a rapidly develo** antiferromagnetic spintronics. However, the difficulty of using them in conventional antiferromagnets lies in (a) too large switching magnetic fields (b) the need for presence of a magnetic anisotropy, and (c) requirement to apply magnetic field along the correspondent anisotropy axis. In this work we propose to use artificial ferrimagnets in which the spin-flop transition occurs without anisotropy and the transition field can be lowered by adjusting exchange coupling in the structure. This is proved by experiment on artificial Fe-Gd ferrimagnets where usage of Pd spacers allowed us to suppress the transition field by two orders of magnitude.
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Submitted 1 February, 2021; v1 submitted 15 January, 2021;
originally announced January 2021.
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High-Resolution X-Ray Studies of the Direct Spin Contact of EuO with Silicon
Authors:
Dmitry V. Averyanov,
Andrey M. Tokmachev,
Igor A. Likhachev,
Eduard F. Lobanovich,
Oleg E. Parfenov,
Elkhan M. Pashaev,
Yuri G. Sadofyev,
Ilia A. Subbotin,
Sergey N. Yakunin,
Vyacheslav G. Storchak
Abstract:
Ferromagnetic semiconductor europium monoxide (EuO) is believed to be an effective spin injector when directly integrated with silicon. Injection through spin-selective ohmic contact requires superb structural quality of the interface EuO/Si. Recent breakthrough in manufacturing free-of-buffer-layer EuO/Si junctions calls for structural studies of the interface between the semiconductors. Ex situ…
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Ferromagnetic semiconductor europium monoxide (EuO) is believed to be an effective spin injector when directly integrated with silicon. Injection through spin-selective ohmic contact requires superb structural quality of the interface EuO/Si. Recent breakthrough in manufacturing free-of-buffer-layer EuO/Si junctions calls for structural studies of the interface between the semiconductors. Ex situ high-resolution X-ray diffraction and reflectivity accompanied by in situ reflection high-energy electron diffraction reveal direct coupling at the interface. A combined analysis of XRD and XRR data provides a common structural model. The structural quality of the EuO/Si spin contact by far exceeds that of previous reports and thus makes a step forward to the ultimate goals of spintronics.
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Submitted 27 November, 2015;
originally announced November 2015.
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Model independent X-ray standing wave analysis of periodic multilayer structures
Authors:
S. N. Yakunin,
I. A. Makhotkin,
M. A. Chuev,
E. M. Pashaev,
E. Zoethout,
E. Louis,
R. W. E. van de Kruijs,
S. Yu. Seregin,
I. A. Subbotin,
D. V. Novikov,
F. Bijkerk,
M. V. Kovalchuk
Abstract:
We present a model independent approach for the reconstruction of the atomic concentration profile in a nanoscale layered structure, as measured using the X-ray fluorescence yield modulated by an X-ray standing wave (XSW). The approach is based on the direct regularized solution of the system of linear equations that characterizes the fluorescence yield. The suggested technique was optimized for,…
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We present a model independent approach for the reconstruction of the atomic concentration profile in a nanoscale layered structure, as measured using the X-ray fluorescence yield modulated by an X-ray standing wave (XSW). The approach is based on the direct regularized solution of the system of linear equations that characterizes the fluorescence yield. The suggested technique was optimized for, but not limited to, the analysis of periodic layered structures where the XSW is formed under Bragg conditions. The developed approach was applied to the reconstruction of the atomic concentration profiles for LaN/BN multilayers with 50 periods of 35 A thick layers. The object is especially difficult to analyse with traditional methods, as the estimated thickness of the interface region between the constituent materials is comparable to the individual layer thicknesses. However, using the suggested technique it was possible to reconstruct the La atomic profile, showing that the La atoms stay localized within the LaN layers and interfaces and do not diffuse into the BN layer. The atomic distributions were found with an accuracy of 1 A. The analysis of the Kr fluorescence yield showed that Kr atoms originating from the sputter gas are trapped in both the LaN-on-BN and the BN-on-LaN interfaces.
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Submitted 12 September, 2013;
originally announced September 2013.
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Structural and transport properties of GaAs/delta<Mn>/GaAs/InxGa1-xAs/GaAs quantum wells
Authors:
B. A. Aronzon,
M. V. Kovalchuk,
E. M. Pashaev,
M. A. Chuev,
V. V. Kvardakov,
I. A. Subbotin,
V. V. Rylkov,
M. A. Pankov,
A. S. Lagutin,
B. N. Zvonkov,
Yu. A. Danilov,
O. V. Vihrova,
A. V. Lashkul,
R. Laiho
Abstract:
We report results of investigations of structural and transport properties of GaAs/Ga(1-x)In(x)As/GaAs quantum wells (QWs) having a 0.5-1.8 ML thick Mn layer, separated from the QW by a 3 nm thick spacer. The structure has hole mobility of about 2000 cm2/(V*s) being by several orders of magnitude higher than in known ferromagnetic two-dimensional structures. The analysis of the electro-physical…
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We report results of investigations of structural and transport properties of GaAs/Ga(1-x)In(x)As/GaAs quantum wells (QWs) having a 0.5-1.8 ML thick Mn layer, separated from the QW by a 3 nm thick spacer. The structure has hole mobility of about 2000 cm2/(V*s) being by several orders of magnitude higher than in known ferromagnetic two-dimensional structures. The analysis of the electro-physical properties of these systems is based on detailed study of their structure by means of high-resolution X-ray diffractometry and glancing-incidence reflection, which allow us to restore the depth profiles of structural characteristics of the QWs and thin Mn containing layers. These investigations show absence of Mn atoms inside the QWs. The quality of the structures was also characterized by photoluminescence spectra from the QWs. Transport properties reveal features inherent to ferromagnetic systems: a specific maximum in the temperature dependence of the resistance and the anomalous Hall effect (AHE) observed in samples with both "metallic" and activated types of conductivity up to ~100 K. AHE is most pronounced in the temperature range where the resistance maximum is observed, and decreases with decreasing temperature. The results are discussed in terms of interaction of 2D-holes and magnetic Mn ions in presence of large-scale potential fluctuations related to random distribution of Mn atoms. The AHE values are compared with calculations taking into account its "intrinsic" mechanism in ferromagnetic systems.
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Submitted 31 July, 2007;
originally announced August 2007.
