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Phase transformation-induced superconducting aluminium-silicon alloy rings
Authors:
B. C. Johnson,
M. Stuiber,
D. L. Creedon,
A. Berhane,
L. H. Willems van Beveren,
S. Rubanov,
J. H. Cole,
V. Mourik,
A. R. Hamilton,
T. L. Duty,
J. C. McCallum
Abstract:
The development of a materials platform that exhibits both superconducting and semiconducting properties is an important endeavour for a range of emerging quantum technologies. We investigate the formation of superconductivity in nanowires fabricated with silicon-on-insulator (SOI). Aluminium from deposited contact electrodes is found to interdiffuses with the Si nanowire structures to form an Al-…
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The development of a materials platform that exhibits both superconducting and semiconducting properties is an important endeavour for a range of emerging quantum technologies. We investigate the formation of superconductivity in nanowires fabricated with silicon-on-insulator (SOI). Aluminium from deposited contact electrodes is found to interdiffuses with the Si nanowire structures to form an Al-Si alloy along the entire length of the predefined nanowire device over micron length scales at temperatures well below that of the Al-Si eutectic. The resultant transformed nanowire structures are layered in geometry with a continuous Al-Si alloy wire sitting on the buried oxide of the SOI and a residual Si cap sitting on top of the wire. The phase transformed material is conformal with any predefined device patterns and the resultant structures are exceptionally smooth-walled compared to similar nanowire devices formed by silicidation processes. The superconducting properties of a mesoscopic AlSi ring formed on a SOI platform are investigated. Low temperature magnetoresistance oscillations, quantized in units of the fluxoid, h/2e, are observed.
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Submitted 12 July, 2022;
originally announced July 2022.
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Beyond Lambertian light trap** for large-area silicon solar cells: fabrication methods
Authors:
Jovan Maksimovic,
**gwen Hu,
Soon Hock Ng,
Tomas Katkus,
Gediminas Seniutinas,
Tatiana Pinedo Rivera,
Michael Stuiber,
Yoshiaki Nishijima,
Sajeev John,
Saulius Juodkazis
Abstract:
Light trap** photonic crystal (PhC) patterns on the surface of Si solar cells provides a novel opportunity to approach the theoretical efficiency limit of 32.3%, for light-to-electrical power conversion with a single junction cell. This is beyond the efficiency limit implied by the Lambertian limit of ray trap** 29%. The interference and slow light effects are harnessed for collecting light ev…
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Light trap** photonic crystal (PhC) patterns on the surface of Si solar cells provides a novel opportunity to approach the theoretical efficiency limit of 32.3%, for light-to-electrical power conversion with a single junction cell. This is beyond the efficiency limit implied by the Lambertian limit of ray trap** 29%. The interference and slow light effects are harnessed for collecting light even at the long wavelengths near the Si band-gap. We compare two different methods for surface patterning, that can be extended to large area surface patterning: 1) laser direct write and 2) step-&-repeat 5-times reduction projection lithography. Large area throughput limitations of these methods are compared with the established electron beam lithography (EBL) route, which is conventionally utilised but much slower than the presented methods. Spectral characterisation of the PhC light trap** is compared for samples fabricated by different methods. Reflectance of Si etched via laser patterned mask was 7% at visible wavelengths and was comparable with Si patterned via EBL made mask. The later pattern showed a stronger absorbance than the Lambertian limit (M.-L. Hsieh et al., Sci. Rep. 10, 11857 (2020)).
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Submitted 31 December, 2021;
originally announced December 2021.
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Development of nanowire devices with quantum functionalities
Authors:
Michael Stuiber,
Laurens Willems van Beveren,
Brett Johnson,
Walter Weber,
Andre Heinzig,
Jurgen Beister,
David Jamieson,
Jeffrey McCallum
Abstract:
Silicon has dominated the microelectronics industry for the last 50 years. With its zero nuclear spin isotope (28Si) and low spin orbit coupling, it is believed that silicon can become an excellent host material for an entirely new generation of devices that operate under the laws of quantum mechanics [1}. Semiconductor nanowires however, offer huge potential as the next building blocks of nano-de…
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Silicon has dominated the microelectronics industry for the last 50 years. With its zero nuclear spin isotope (28Si) and low spin orbit coupling, it is believed that silicon can become an excellent host material for an entirely new generation of devices that operate under the laws of quantum mechanics [1}. Semiconductor nanowires however, offer huge potential as the next building blocks of nano-devices due to their one-dimensional structure and properties [2]. We describe a fabrication process to prepare doped vapor-liquid-solid (VLS) grown silicon nanowire samples in a 2- and 4-terminal measurement setup for electrical characterisation.
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Submitted 12 March, 2015;
originally announced March 2015.
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Dirac-screening stabilized surface-state transport in a topological insulator
Authors:
Christoph Brüne,
Cornelius Thienel,
Michael Stuiber,
Jan Böttcher,
Hartmut Buhmann,
Elena G. Novik,
Chao-Xing Liu,
Ewelina M. Hankiewicz,
Laurens W. Molenkamp
Abstract:
We report magnetotransport studies on a gated strained HgTe device. This material is a threedimensional topological insulator and exclusively shows surface state transport. Remarkably, the Landau level dispersion and the accuracy of the Hall quantization remain unchanged over a wide density range ($3 \times 10^{11} cm^{-2} < n < 1 \times 10^{12} cm^{-2}$). This implies that even at large carrier d…
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We report magnetotransport studies on a gated strained HgTe device. This material is a threedimensional topological insulator and exclusively shows surface state transport. Remarkably, the Landau level dispersion and the accuracy of the Hall quantization remain unchanged over a wide density range ($3 \times 10^{11} cm^{-2} < n < 1 \times 10^{12} cm^{-2}$). This implies that even at large carrier densities the transport is surface state dominated, where bulk transport would have been expected to coexist already. Moreover, the density dependence of the Dirac-type quantum Hall effect allows to identify the contributions from the individual surfaces. A $k \cdot p$ model can describe the experiments, but only when assuming a steep band bending across the regions where the topological surface states are contained. This steep potential originates from the specific screening properties of Dirac systems and causes the gate voltage to influence the position of the Dirac points rather than that of the Fermi level.
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Submitted 24 July, 2014;
originally announced July 2014.
