Showing 1–32 of 32 results for author: Studenikin, S A

Controllable single spin evolution at sub-harmonics of electric dipole spin resonance enhanced by four-level Landau-Zener-St{ü}ckelberg-Majorana interference

Authors: D. V. Khomitsky, M. V. Bastrakova, V. O. Munyaev, N. A. Zaprudnov, S. A. Studenikin

Abstract: Sub-harmonics of electric dipole spin resonance (EDSR) mediated by Landau-Zener-St{ü}ckelberg-Majorana (LZSM) tunneling transitions are studied numerically and analytically in a Zeeman-split four level system with strong spin-orbit coupling that can be realized, for example, in a GaAs-based double quantum dot in a single-hole regime. The spin qubit is formed in one of the dots and the second dot i… ▽ More Sub-harmonics of electric dipole spin resonance (EDSR) mediated by Landau-Zener-St{ü}ckelberg-Majorana (LZSM) tunneling transitions are studied numerically and analytically in a Zeeman-split four level system with strong spin-orbit coupling that can be realized, for example, in a GaAs-based double quantum dot in a single-hole regime. The spin qubit is formed in one of the dots and the second dot is used as an auxiliary element to enhance functionality of the spin qubit. In particular, it is found that the spin rotation rate can be essentially enhanced due to the tunnel coupling with the auxiliary dot on both the main EDSR frequency and at its high sub-harmonics allowing the coherent spin $π$-rotations on a 10-ns time scale. Spin manipulation on high sub-harmonics is promising for new time-efficient schemes of the spin control and readout in qubit devices operating at high magnetic fields where the main harmonic is inaccessible due to hardware limitations. △ Less

Submitted 2 November, 2023; originally announced November 2023.

Comments: 14 pages, 6 figures, published version

Journal ref: Physical Review B 108, 205404 (2023)

Single spin Landau-Zener-Stückelberg-Majorana interferometry of Zeeman-split states with strong spin-orbit interaction in a double quantum dot

Authors: D. V. Khomitsky, S. A. Studenikin

Abstract: Single spin state evolution induced by the Landau-Zener-Stückelberg-Majorana (LZSM) interference in a Zeeman-spit four level system in a periodically driven double quantum dot is studied theoretically by the Floquet stroboscopic method. An interplay between spin-conserving and spin-flip tunneling processes with the Electric Dipole Spin Resonance (EDSR) that is induced in an individual dot and enha… ▽ More Single spin state evolution induced by the Landau-Zener-Stückelberg-Majorana (LZSM) interference in a Zeeman-spit four level system in a periodically driven double quantum dot is studied theoretically by the Floquet stroboscopic method. An interplay between spin-conserving and spin-flip tunneling processes with the Electric Dipole Spin Resonance (EDSR) that is induced in an individual dot and enhanced by the LZSM multiple level crossings with the neighboring quantum dot is investigated as a function of the microwave (MW) frequency, driving amplitude, interdot detuning, and magnetic field. A number of special points in the parameter space are identified, out of which where all the three features are merged. Under this triple-crossing resonance condition the interdot tunneling is combined with a fast spin evolution in each dot at the EDSR frequency. Harmonics of the EDSR are revealed in the spin-dependent tunneling maps versus variable magnetic field and MW frequency. The results are applicable for both electron and hole systems with strong spin-orbit interaction and may be useful for develo** new time-efficient schemes of the spin control and readout in qubit devices. △ Less

Submitted 16 November, 2022; v1 submitted 31 August, 2022; originally announced August 2022.

Comments: 15 pages, 9 figures, published version

Journal ref: Physical Review B 106, 195414 (2022)

Effects of biased and unbiased illuminations on dopant-free GaAs/AlGaAs 2DEGs

Authors: A. Shetty, F. Sfigakis, W. Y. Mak, K. Das Gupta, B. Buonacorsi, M. C. Tam, H. S. Kim, I. Farrer, A. F. Croxall, H. E. Beere, A. R. Hamilton, M. Pepper, D. G. Austing, S. A. Studenikin, A. Sachrajda, M. E. Reimer, Z. R. Wasilewski, D. A. Ritchie, J. Baugh

Abstract: Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs located more than 70 nm away from the surface result in a gain in mobility at a given electron density, primarily driven by the reduction of background i… ▽ More Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs located more than 70 nm away from the surface result in a gain in mobility at a given electron density, primarily driven by the reduction of background impurities. In 2DEGs closer to the surface, unbiased illuminations result in a mobility loss, driven by an increase in surface charge density. Biased illuminations performed with positive applied gate voltages result in a mobility gain, whereas those performed with negative applied voltages result in a mobility loss. The magnitude of the mobility gain (loss) weakens with 2DEG depth, and is likely driven by a reduction (increase) in surface charge density. Remarkably, this mobility gain/loss is fully reversible by performing another biased illumination with the appropriate gate voltage, provided both n-type and p-type ohmic contacts are present. Experimental results are modeled with Boltzmann transport theory, and possible mechanisms are discussed. △ Less

Submitted 21 December, 2021; v1 submitted 28 December, 2020; originally announced December 2020.

Comments: 18 pages, 13 figures; one paragraph rephrased on page 8

Microwave Photoresistance in an Ultrahigh Quality GaAs Quantum Well

Authors: Q. Shi, S. A. Studenikin, M. A. Zudov, K. W. Baldwin, L. N. Pfeiffer, K. W. West

Abstract: The temperature dependence of microwave-induced resistance oscillations (MIRO), according to the theory, originates from electron-electron scattering. This scattering affects both the quantum lifetime, or the density of states, and the inelastic lifetime, which governs the relaxation of the nonequilibrium distribution function. Here, we report on MIRO in an ultrahigh mobility ($μ> 3 \times 10^7$ c… ▽ More The temperature dependence of microwave-induced resistance oscillations (MIRO), according to the theory, originates from electron-electron scattering. This scattering affects both the quantum lifetime, or the density of states, and the inelastic lifetime, which governs the relaxation of the nonequilibrium distribution function. Here, we report on MIRO in an ultrahigh mobility ($μ> 3 \times 10^7$ cm$^2$/Vs) 2D electron gas at $T$ between $0.3$ K and $1.8$ K. In contrast to theoretical predictions, the quantum lifetime is found to be $T$-independent in the whole temperature range studied. At the same time, the $T$-dependence of the inelastic lifetime is much \emph{stronger} than can be expected from electron-electron interactions. △ Less

Submitted 26 February, 2016; originally announced February 2016.

Journal ref: Phys. Rev. B 93, 121305(R) (2016)

The visibility study of S-T$_+$ Landau-Zener-Stückelberg oscillations without applied initialization

Authors: G. Granger, G. C. Aers, S. A. Studenikin, A. Kam, P. Zawadzki, Z. R. Wasilewski, A. S. Sachrajda

Abstract: Probabilities deduced from quantum information studies are usually based on averaging many identical experiments separated by an initialization step. Such initialization steps become experimentally more challenging to implement as the complexity of quantum circuits increases. To better understand the consequences of imperfect initialization on the deduced probabilities, we study the effect of not… ▽ More Probabilities deduced from quantum information studies are usually based on averaging many identical experiments separated by an initialization step. Such initialization steps become experimentally more challenging to implement as the complexity of quantum circuits increases. To better understand the consequences of imperfect initialization on the deduced probabilities, we study the effect of not initializing the system between measurements. For this we utilize Landau-Zener-Stückelberg oscillations in a double quantum dot circuit. Experimental results are successfully compared to theoretical simulations. △ Less

Submitted 11 January, 2015; v1 submitted 14 April, 2014; originally announced April 2014.

Comments: 8 pages, 5 figures

Journal ref: Phys. Rev. B 91, 115309 (2015)

Long-range spin transfer in triple quantum dots

Authors: R. Sánchez, G. Granger, L. Gaudreau, A. Kam, M. Pioro-Ladrière, S. A. Studenikin, P. Zawadzki, A. S. Sachrajda, G. Platero

Abstract: Tunneling in a quantum coherent structure is not restricted to only nearest neighbours. Hop** between distant sites is possible via the virtual occupation of otherwise avoided intermediate states. Here we report the observation of long range transitions in the transport through three quantum dots coupled in series. A single electron is delocalized between the left and right quantum dots while th… ▽ More Tunneling in a quantum coherent structure is not restricted to only nearest neighbours. Hop** between distant sites is possible via the virtual occupation of otherwise avoided intermediate states. Here we report the observation of long range transitions in the transport through three quantum dots coupled in series. A single electron is delocalized between the left and right quantum dots while the centre one remains always empty. Superpositions are formed and both charge and spin are exchanged between the outermost dots. Detection of the process is achieved via the observation of narrow resonances, insensitive to the transport Pauli spin blockade. △ Less

Submitted 5 May, 2014; v1 submitted 18 December, 2013; originally announced December 2013.

Comments: 5 pages, 4 figures. Published version

Journal ref: Phys. Rev. Lett. 112, 176803 (2014)

Bipolar spin blockade and coherent state superpositions in a triple quantum dot

Authors: M. Busl, G. Granger, L. Gaudreau, R. Sánchez, A. Kam, M. Pioro-Ladrière, S. A. Studenikin, P. Zawadzki, Z. R. Wasilewski, A. S. Sachrajda, G. Platero

Abstract: Spin qubits based on interacting spins in double quantum dots have been successfully demonstrated. Readout of the qubit state involves a conversion of spin to charge information, universally achieved by taking advantage of a spin blockade phenomenon resulting from Pauli's exclusion principle. The archetypal spin blockade transport signature in double quantum dots takes the form of a rectified curr… ▽ More Spin qubits based on interacting spins in double quantum dots have been successfully demonstrated. Readout of the qubit state involves a conversion of spin to charge information, universally achieved by taking advantage of a spin blockade phenomenon resulting from Pauli's exclusion principle. The archetypal spin blockade transport signature in double quantum dots takes the form of a rectified current. Currently more complex spin qubit circuits including triple quantum dots are being developed. Here we show both experimentally and theoretically (a) that in a linear triple quantum dot circuit, the spin blockade becomes bipolar with current strongly suppressed in both bias directions and (b) that a new quantum coherent mechanism becomes relevant. Within this mechanism charge is transferred non-intuitively via coherent states from one end of the linear triple dot circuit to the other without involving the centre site. Our results have implications in future complex nano-spintronic circuits. △ Less

Submitted 19 October, 2013; originally announced October 2013.

Comments: 21 pages, 7 figures

Journal ref: Nature Nanotechnology 8, 261 (2013)

Quantum interference and phonon-mediated back-action in lateral quantum dot circuits

Authors: G. Granger, D. Taubert, C. E. Young, L. Gaudreau, A. Kam, S. A. Studenikin, P. Zawadzki, D. Harbusch, D. Schuh, W. Wegscheider, Z. R. Wasilewski, A. A. Clerk, S. Ludwig, A. S. Sachrajda

Abstract: Spin qubits have been successfully realized in electrostatically defined, lateral few-electron quantum dot circuits. Qubit readout typically involves spin to charge information conversion, followed by a charge measurement made using a nearby biased quantum point contact. It is critical to understand the back-action disturbances resulting from such a measurement approach. Previous studies have indi… ▽ More Spin qubits have been successfully realized in electrostatically defined, lateral few-electron quantum dot circuits. Qubit readout typically involves spin to charge information conversion, followed by a charge measurement made using a nearby biased quantum point contact. It is critical to understand the back-action disturbances resulting from such a measurement approach. Previous studies have indicated that quantum point contact detectors emit phonons which are then absorbed by nearby qubits. We report here the observation of a pronounced back-action effect in multiple dot circuits where the absorption of detector-generated phonons is strongly modified by a quantum interference effect, and show that the phenomenon is well described by a theory incorporating both the quantum point contact and coherent phonon absorption. Our combined experimental and theoretical results suggest strategies to suppress back-action during the qubit readout procedure. △ Less

Submitted 30 January, 2013; originally announced January 2013.

Comments: 25 pages, 8 figures

Journal ref: Nature Physics 8, 522-527 (2012)

Microwave-induced resistance oscillations in tilted magnetic fields

Authors: A. Bogan, A. T. Hatke, S. A. Studenikin, A. Sachrajda, M. A. Zudov, L. N. Pfeiffer, K. W. West

Abstract: We have studied the effect of an in-plane magnetic field on microwave-induced resistance oscillations in a high mobility two-dimensional electron system. We have found that the oscillation amplitude decays exponentially with an in-plane component of the magnetic field $B_\parallel$. While these findings cannot be accounted for by existing theories, our analysis suggests that the decay can be expla… ▽ More We have studied the effect of an in-plane magnetic field on microwave-induced resistance oscillations in a high mobility two-dimensional electron system. We have found that the oscillation amplitude decays exponentially with an in-plane component of the magnetic field $B_\parallel$. While these findings cannot be accounted for by existing theories, our analysis suggests that the decay can be explained by a $B_\parallel$-induced correction to the quantum scattering rate, which is quadratic in $B_\parallel$. △ Less

Submitted 15 November, 2012; originally announced November 2012.

Enhanced charge detection of spin qubit readout via an intermediate state

Authors: S. A. Studenikin, J. Thorgrimson, G. C. Aers, A. Kam, P. Zawadzki, Z. R. Wasilewski, A. Bogan, A. S. Sachrajda

Abstract: We employ an intermediate excited charge state of a lateral quantum dot device to increase the charge detection contrast during the qubit state readout procedure, allowing us to increase the visibility of coherent qubit oscillations. This approach amplifies the coherent oscillation magnitude but has no effect on the detector noise resulting in an increase in the signal to noise ratio. In this lett… ▽ More We employ an intermediate excited charge state of a lateral quantum dot device to increase the charge detection contrast during the qubit state readout procedure, allowing us to increase the visibility of coherent qubit oscillations. This approach amplifies the coherent oscillation magnitude but has no effect on the detector noise resulting in an increase in the signal to noise ratio. In this letter we apply this scheme to demonstrate a significant enhancement of the fringe contrast of coherent Landau-Zener-Stuckleberg oscillations between singlet S and triplet T+ two-spin states. △ Less

Submitted 4 June, 2012; originally announced June 2012.

Comments: 3 pages, 3 figures

Quantum interference between three two-spin states in a double quantum dot

Authors: S. A. Studenikin, G. C. Aers, G. Granger, L. Gaudreau, A. Kam, P. Zawadzki, Z. R. Wasilewski, A. S. Sachrajda

Abstract: Qubits based on the singlet (S) and the triplet (T0, T+) states in double quantum dots have been demonstrated in separate experiments. It has been recently proposed theoretically that under certain conditions a quantum interference could occur from the interplay between these two qubit species. Here we report experiments and modeling which confirm these theoretical predictions and identify the con… ▽ More Qubits based on the singlet (S) and the triplet (T0, T+) states in double quantum dots have been demonstrated in separate experiments. It has been recently proposed theoretically that under certain conditions a quantum interference could occur from the interplay between these two qubit species. Here we report experiments and modeling which confirm these theoretical predictions and identify the conditions under which this interference occurs. Density matrix calculations show that the interference pattern manifests primarily via the occupation of the common singlet state. The S/T0 qubit is found to have a much longer coherence time as compared to the S/T+ qubit. △ Less

Submitted 18 January, 2012; originally announced January 2012.

Comments: 4 pages including 5 figures

Coherent control of three-spin states in a triple quantum dot

Authors: L. Gaudreau, G. Granger, A. Kam, G. C. Aers, S. A. Studenikin, P. Zawadzki, M. Pioro-Ladrière, Z. R. Wasilewski, A. S. Sachrajda

Abstract: Spin qubits involving individual spins in single quantum dots or coupled spins in double quantum dots have emerged as potential building blocks for quantum information processing applications. It has been suggested that triple quantum dots may provide additional tools and functionalities. These include the encoding of information to either obtain protection from decoherence or to permit all-electr… ▽ More Spin qubits involving individual spins in single quantum dots or coupled spins in double quantum dots have emerged as potential building blocks for quantum information processing applications. It has been suggested that triple quantum dots may provide additional tools and functionalities. These include the encoding of information to either obtain protection from decoherence or to permit all-electrical operation, efficient spin busing across a quantum circuit, and to enable quantum error correction utilizing the three-spin Greenberger-Horn-Zeilinger quantum state. Towards these goals we demonstrate for the first time coherent manipulation between two interacting three-spin states. We employ the Landau-Zener-Stückelberg approach for creating and manipulating coherent superpositions of quantum states. We confirm that we are able to maintain coherence when decreasing the exchange coupling of one spin with another while simultaneously increasing its coupling with the third. Such control of pairwise exchange is a requirement of most spin qubit architectures but has not been previously demonstrated. △ Less

Submitted 22 February, 2013; v1 submitted 17 June, 2011; originally announced June 2011.

Comments: 12 pages, 13 figures, and 2 tables

Journal ref: Nature Physics 8, 54 (2012)

Non-linear magnetotransport phenomena in high-mobility two-dimensional electrons in InGaAs/InP and GaAs/AlGaAs

Authors: S. A. Studenikin, G. Granger, A. Kam, A. S. Sachrajda, Z. R. Wasilewski, P. J. Poole

Abstract: This paper reports on the observation and analysis of magnetotransport phenomena in the nonlinear differential resistance $r_{xx}=dV_{xx}/dI$ of high-mobility InGaAs/InP and GaAs/AlGaAs Hall bar samples driven by direct current, $\Idc$. Specifically, it is observed that Shubnikov -de Haas (SdH) oscillations at large filling factors invert their phase at sufficiently large values of $\Idc$. This… ▽ More This paper reports on the observation and analysis of magnetotransport phenomena in the nonlinear differential resistance $r_{xx}=dV_{xx}/dI$ of high-mobility InGaAs/InP and GaAs/AlGaAs Hall bar samples driven by direct current, $\Idc$. Specifically, it is observed that Shubnikov -de Haas (SdH) oscillations at large filling factors invert their phase at sufficiently large values of $\Idc$. This phase inversion is explained as being due to an electron heating effect. In the quantum Hall effect regime the $r_{xx}$ oscillations transform into diamond-shaped patterns with different slopes corresponding to odd and even filling factors. The diamond-shaped features at odd filling factors can be used as a probe to determine spin energy gaps. A Zero Current Anomaly (ZCA) which manifests itself as a narrow dip in the $r_{xx}(\Idc)$ characteristics at zero current, is also observed. The ZCA effect strongly depends upon temperature, vanishing above 1 K while the transport diamonds persist to higher temperatures. The transport diamonds and ZCA are fully reproduced in a higher mobility GaAs/AlGaAs Hall bar structure confirming that these phenomena reflect intrinsic properties of two-dimensional systems. △ Less

Submitted 3 September, 2012; v1 submitted 30 November, 2010; originally announced December 2010.

Comments: Final version, accepted in PRB

Few-electron quantum dots in III-V ternary alloys: role of fluctuations

Authors: G. Granger, S. A. Studenikin, A. Kam, A. S. Sachrajda, P. J. Poole

Abstract: We study experimentally the electron transport properties of gated quantum dots formed in InGaAs/InP and InAsP/InP quantum well structures grown by chemical-beam epitaxy. For the case of the InGaAs quantum well, quantum dots form directly underneath narrow gate electrodes due to potential fluctuations. We measure the Coulomb-blockade diamonds in the few-electron regime of a single quantum dot and… ▽ More We study experimentally the electron transport properties of gated quantum dots formed in InGaAs/InP and InAsP/InP quantum well structures grown by chemical-beam epitaxy. For the case of the InGaAs quantum well, quantum dots form directly underneath narrow gate electrodes due to potential fluctuations. We measure the Coulomb-blockade diamonds in the few-electron regime of a single quantum dot and observe photon-assisted tunneling peaks under microwave irradiation. A singlet-triplet transition at high magnetic field and Coulomb-blockade effects in the quantum Hall regime are also observed. For the InAsP quantum well, an incidental triple quantum dot forms also due to potential fluctuations within a single dot layout. Tunable quadruple points are observed via transport measurements. △ Less

Submitted 8 December, 2010; v1 submitted 27 July, 2010; originally announced July 2010.

Comments: 3.3 pages, 3 figures. Added two new subfigures, new references, and improved the text

Journal ref: Appl. Phys. Lett. 98 , 132107 (2011)

The 3D transport diagram of a triple quantum dot

Authors: G. Granger, L. Gaudreau, A. Kam, M. Pioro-Ladrière, S. A. Studenikin, Z. R. Wasilewski, P. Zawadzki, A. S. Sachrajda

Abstract: We measure a triple quantum dot in the regime where three addition lines, corresponding to the addition of an electron to each of three dots, pass through each other. In particular, we probe the interplay between transport and the tridimensional nature of the stability diagram. We choose the regime most pertinent for spin qubit applications. We find that at low bias transport through the triple qu… ▽ More We measure a triple quantum dot in the regime where three addition lines, corresponding to the addition of an electron to each of three dots, pass through each other. In particular, we probe the interplay between transport and the tridimensional nature of the stability diagram. We choose the regime most pertinent for spin qubit applications. We find that at low bias transport through the triple quantum dot circuit is only possible at six quadruple point locations. The results are consistent with an equivalent circuit model. △ Less

Submitted 16 July, 2010; v1 submitted 11 June, 2010; originally announced June 2010.

Comments: 4.3 pages, 5 figures, 1 table. This second version contains expanded exprimental details and analysis sections

Journal ref: Phys. Rev. B 82, 075304 (2010)

Quantum oscillations in the microwave magnetoabsorption of a 2D electron gas

Authors: O. M. Fedorych, M. Potemski, S. A. Studenikin, J. A. Gupta, Z. R. Wasilewski, I. A. Dmitriev

Abstract: We report on the experimental observation of the quantum oscillations in microwave magnetoabsorption of a high-mobility two-dimensional electron gas induced by Landau quantization. Using original resonance-cavity technique, we observe two kinds of oscillations in the magnetoabsorption originating from inter-Landau-level and intra-Landau-level transitions. The experimental observations are in full… ▽ More We report on the experimental observation of the quantum oscillations in microwave magnetoabsorption of a high-mobility two-dimensional electron gas induced by Landau quantization. Using original resonance-cavity technique, we observe two kinds of oscillations in the magnetoabsorption originating from inter-Landau-level and intra-Landau-level transitions. The experimental observations are in full accordance with theoretical predictions. Presented theory also explains why similar quantum oscillations are not observed in transmission and reflection experiments on high-mobility structures despite of very strong effect of microwaves on the dc resistance in the same samples. △ Less

Submitted 2 June, 2010; originally announced June 2010.

Comments: 4+ pages, 4 figures

Journal ref: Phys. Rev. B 81, 201302(R) (2010), see also http://physics.aps.org/synopsis-for/10.1103/PhysRevB.81.201302

Electron transport in gated InGaAs and InAsP quantum well wires in selectively-grown InP ridge structures

Authors: G. Granger, A. Kam, S. A. Studenikin, A. S. Sachrajda, G. C. Aers, R. L. Williams, P. J. Poole

Abstract: The purpose of this work is to fabricate ribbon-like InGaAs and InAsP wires embedded in InP ridge structures and investigate their transport properties. The InP ridge structures that contain the wires are selectively grown by chemical beam epitaxy (CBE) on pre-patterned InP substrates. To optimize the growth and micro-fabrication processes for electronic transport, we explore the Ohmic contact r… ▽ More The purpose of this work is to fabricate ribbon-like InGaAs and InAsP wires embedded in InP ridge structures and investigate their transport properties. The InP ridge structures that contain the wires are selectively grown by chemical beam epitaxy (CBE) on pre-patterned InP substrates. To optimize the growth and micro-fabrication processes for electronic transport, we explore the Ohmic contact resistance, the electron density, and the mobility as a function of the wire width using standard transport and Shubnikov-de Haas measurements. At low temperatures the ridge structures reveal reproducible mesoscopic conductance fluctuations. We also fabricate ridge structures with submicron gate electrodes that exhibit non-leaky gating and good pinch-off characteristics acceptable for device operation. Using such wrap gate electrodes, we demonstrate that the wires can be split to form quantum dots evidenced by Coulomb blockade oscillations in transport measurements. △ Less

Submitted 11 November, 2009; v1 submitted 31 August, 2009; originally announced August 2009.

Comments: 5 pages, 4 figures, additional references and improved Fig. 4c, MSS-14 conference, submitted to Physica E

Journal ref: Physica E 42, 2622 (2010)

A Tuneable Few Electron Triple Quantum Dot

Authors: L. Gaudreau, A. Kam, G. Granger, S. A. Studenikin, P. Zawadzki, A. S. Sachrajda

Abstract: In this paper we report on a tuneable few electron lateral triple quantum dot design. The quantum dot potentials are arranged in series. The device is aimed at studies of triple quantum dot properties where knowing the exact number of electrons is important as well as quantum information applications involving electron spin qubits. We demonstrate tuning strategies for achieving required resonant… ▽ More In this paper we report on a tuneable few electron lateral triple quantum dot design. The quantum dot potentials are arranged in series. The device is aimed at studies of triple quantum dot properties where knowing the exact number of electrons is important as well as quantum information applications involving electron spin qubits. We demonstrate tuning strategies for achieving required resonant conditions such as quadruple points where all three quantum dots are on resonance. We find that in such a device resonant conditions at specific configurations are accompanied by novel charge transfer behaviour. △ Less

Submitted 9 July, 2009; originally announced July 2009.

Comments: 11 pages, 4 figures

Journal ref: Appl. Phys. Lett. 95, 193101 (2009)

Microwave magnetoplasmon absorption by a 2DEG stripe

Authors: O. M. Fedorych, S. Moreau, M. Potemski, S. A. Studenikin, T. Saku, Y. Hirayama

Abstract: Microwave absorption by a high mobility 2DEG has been investigated experimentally using sensitive Electron Paramagnetic Resonance cavity technique. It is found that MW absorption spectra are chiefly governed by confined magnetoplasmon excitations in a 2DEG stripe. Spectra of the 2D magnetoplasmons are studied as a function of magnetic field, MW frequency and carrier density. The electron concent… ▽ More Microwave absorption by a high mobility 2DEG has been investigated experimentally using sensitive Electron Paramagnetic Resonance cavity technique. It is found that MW absorption spectra are chiefly governed by confined magnetoplasmon excitations in a 2DEG stripe. Spectra of the 2D magnetoplasmons are studied as a function of magnetic field, MW frequency and carrier density. The electron concentration is tuned by illumination and monitored using optical photoluminescence technique. △ Less

Submitted 8 June, 2009; originally announced June 2009.

Comments: to be published in International Journal of Modern Physics B

Journal ref: International Journal of Modern Physics B, v.23, Iss. 12/13, pp.2698 - 2702 (2009)

Spin selective Aharonov-Bohm oscillations in a lateral triple quantum dot

Authors: F. Delgado, Y. -P. Shim, M. Korkusinski, L. Gaudreau, S. A. Studenikin, A. S. Sachrajda, P. Hawrylak

Abstract: We present a theory for spin selective Aharonov-Bohm oscillations in a lateral triple quantum dot. We show that to understand the Aharonov-Bohm (AB) effect in an interacting electron system within a triple quantum dot molecule (TQD) where the dots lie in a ring configuration requires one to not only consider electron charge but also spin. Using a Hubbard model supported by microscopic calculatio… ▽ More We present a theory for spin selective Aharonov-Bohm oscillations in a lateral triple quantum dot. We show that to understand the Aharonov-Bohm (AB) effect in an interacting electron system within a triple quantum dot molecule (TQD) where the dots lie in a ring configuration requires one to not only consider electron charge but also spin. Using a Hubbard model supported by microscopic calculations we show that, by localizing a single electron spin in one of the dots, the current through the TQD molecule depends not only on the flux but also on the relative orientation of the spin of the incoming and localized electrons. AB oscillations are predicted only for the spin singlet electron complex resulting in a magnetic field tunable "spin valve". △ Less

Submitted 9 September, 2008; originally announced September 2008.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. Lett. 101, 226810 (2008)

Topological Hunds rules and the electronic properties of a triple lateral quantum dot molecule

Authors: Marek Korkusinski, Irene Puerto Gimenez, Pawel Hawrylak, Louis Gaudreau, Sergei A. Studenikin, Andrew S. Sachrajda

Abstract: We analyze theoretically and experimentally the electronic structure and charging diagram of three coupled lateral quantum dots filled with electrons. Using the Hubbard model and real-space exact diagonalization techniques we show that the electronic properties of this artificial molecule can be understood using a set of topological Hunds rules. These rules relate the multi-electron energy level… ▽ More We analyze theoretically and experimentally the electronic structure and charging diagram of three coupled lateral quantum dots filled with electrons. Using the Hubbard model and real-space exact diagonalization techniques we show that the electronic properties of this artificial molecule can be understood using a set of topological Hunds rules. These rules relate the multi-electron energy levels to spin and the inter-dot tunneling $t$, and control charging energies. We map out the charging diagram for up to N=6 electrons and predict a spin-polarized phase for two holes. The theoretical charging diagram is compared with the measured charging diagram of the gated triple-dot device. △ Less

Submitted 26 February, 2007; v1 submitted 6 October, 2006; originally announced October 2006.

Comments: 31 pages, 7 figures, accepted to March 15, 2007 issue of Phys. Rev. B, vol. 75

Frequency quenching of microwave induced resistance oscillations in a high mobility two-dimensional electron gas

Authors: S. A. Studenikin, A. S. Sachrajda, J. A. Gupta, Z. R. Wasilewski, O. M. Fedorych, M. Byszewski, D. K. Maude, M. Potemski, M. Hilke, L. N. Pfeiffer, K. W. West

Abstract: The frequency dependence of microwave-induced resistance oscillations (MIROs) has been studied experimentally in high-mobility electron GaAs/AlGaAs structures to explore the limits at which these oscillations can be observed. It is found that in dc transport experiments at frequencies above 120 GHz, MIROs start to quench, while above 230 GHz, they completely disappear. The results will need to b… ▽ More The frequency dependence of microwave-induced resistance oscillations (MIROs) has been studied experimentally in high-mobility electron GaAs/AlGaAs structures to explore the limits at which these oscillations can be observed. It is found that in dc transport experiments at frequencies above 120 GHz, MIROs start to quench, while above 230 GHz, they completely disappear. The results will need to be understood theoretically but are qualitatively discussed within a model in which forced electronic charge oscillations (plasmons) play an intermediate role in the interaction process between the radiation and the single-particle electron excitations between Landau levels. △ Less

Submitted 19 November, 2007; v1 submitted 3 February, 2006; originally announced February 2006.

Comments: final version: total 13 pages including 6 figures (6 pages in journal format)

Journal ref: Phys. Rev. B v. 76, p. 165321 (2007)

Electron spin-orbit splitting in InGaAs/InP quantum well studied by means of the weak antilocalization and spin-zero effects in tilted magnetic fields

Authors: S. A. Studenikin, P. T. Coleridge, G. Yu, P. J. Poole

Abstract: The coupling between Zeeman spin splitting and Rashba spin-orbit terms has been studied experimentally in a gated InGaAs/InP quantum well structure by means of simultaneous measurements of the weak antilocalization (WAL) effect and beating in the SdH oscillations. The strength of the Zeeman splitting was regulated by tilting the magnetic field with the spin-zeros in the SdH oscillations, which a… ▽ More The coupling between Zeeman spin splitting and Rashba spin-orbit terms has been studied experimentally in a gated InGaAs/InP quantum well structure by means of simultaneous measurements of the weak antilocalization (WAL) effect and beating in the SdH oscillations. The strength of the Zeeman splitting was regulated by tilting the magnetic field with the spin-zeros in the SdH oscillations, which are not always present, being enhanced by the tilt. In tilted fields the spin-orbit and Zeeman splittings are not additive, and a simple expression is given for the energy levels. The Rashba parameter and the electron g-factor were extracted from the position of the spin zeros in tilted fields. A good agreement is obtained for the spin-orbit coupling strength from the spin-zeros and weak antilocalization measurements. △ Less

Submitted 25 August, 2005; v1 submitted 12 August, 2005; originally announced August 2005.

Comments: Accepted for publication in Semiconductors Science and Technology

The microwave induced resistance response of a high mobility 2DEG from the quasi-classical limit to the quantum Hall regime

Authors: S. A. Studenikin, M. Byszewski, D. K. Maude, M. Potemski, A. Sachrajda, Z. R. Wasilewski, M. Hilke, L. N. Pfeiffer, K. W. West

Abstract: Microwave induced resistance oscillations (MIROs) were studied experimentally over a very wide range of frequencies ranging from ~20 GHz up to ~4 THz, and from the quasi-classical regime to the quantum Hall effect regime. At low frequencies regular MIROs were observed, with a periodicity determined by the ratio of the microwave to cyclotron frequencies. For frequencies below 150 GHz the magnetic… ▽ More Microwave induced resistance oscillations (MIROs) were studied experimentally over a very wide range of frequencies ranging from ~20 GHz up to ~4 THz, and from the quasi-classical regime to the quantum Hall effect regime. At low frequencies regular MIROs were observed, with a periodicity determined by the ratio of the microwave to cyclotron frequencies. For frequencies below 150 GHz the magnetic field dependence of MIROs waveform is well described by a simplified version of an existing theoretical model, where the dam** is controlled by the width of the Landau levels. In the THz frequency range MIROs vanish and only pronounced resistance changes are observed at the cyclotron resonance. The evolution of MIROs with frequency are presented and discussed. △ Less

Submitted 12 August, 2005; originally announced August 2005.

Comments: 4 pages, presented at EP2DS, to be published in Physica E

Charge Sensing of an Artificial H2+ Molecule

Authors: M. Pioro-Ladriere, M. R. Abolfath, P. Zawadzki, J. Lapointe, S. A. Studenikin, A. S. Sachrajda, P. Hawrylak

Abstract: We report charge detection studies of a lateral double quantum dot with controllable charge states and tunable tunnel coupling. Using an integrated electrometer, we characterize the equilibrium state of a single electron trapped in the doubled-dot (artificial H2+ molecule) by measuring the average occupation of one dot. We present a model where the electrostatic coupling between the molecule and… ▽ More We report charge detection studies of a lateral double quantum dot with controllable charge states and tunable tunnel coupling. Using an integrated electrometer, we characterize the equilibrium state of a single electron trapped in the doubled-dot (artificial H2+ molecule) by measuring the average occupation of one dot. We present a model where the electrostatic coupling between the molecule and the sensor is taken into account explicitly. From the measurements, we extract the temperature of the isolated electron and the tunnel coupling energy. It is found that this coupling can be tuned between 0 and 60 micro electron-volt in our device. △ Less

Submitted 28 July, 2005; v1 submitted 1 April, 2005; originally announced April 2005.

Comments: 5 pages, 4 figures. Revised version with added material. To be published in Physical Review B

Journal ref: Phys. Rev. B 72, 125307 (2005)

The origin of switching noise in GaAs/AlGaAs lateral gated devices

Authors: M. Pioro-Ladrière, J. H. Davies, A. R. Long, A. S. Sachrajda, L. Gaudreau, P. Zawadzki, J. Lapointe, J. Gupta, Z. Wasilewski, S. A. Studenikin

Abstract: We have studied the origin of switching (telegraph) noise at low temperature in lateral quantum structures defined electrostatically in GaAs/AlGaAs heterostructures by surface gates. The noise was measured by monitoring the conductance fluctuations around $e^2/h$ on the first step of a quantum point contact at around 1.2 K. Cooling with a positive bias on the gates dramatically reduces this nois… ▽ More We have studied the origin of switching (telegraph) noise at low temperature in lateral quantum structures defined electrostatically in GaAs/AlGaAs heterostructures by surface gates. The noise was measured by monitoring the conductance fluctuations around $e^2/h$ on the first step of a quantum point contact at around 1.2 K. Cooling with a positive bias on the gates dramatically reduces this noise, while an asymmetric bias exacerbates it. We propose a model in which the noise originates from a leakage current of electrons that tunnel through the Schottky barrier under the gate into the doped layer. The key to reducing noise is to keep this barrier opaque under experimental conditions. Bias cooling reduces the density of ionized donors, which builds in an effective negative gate voltage. A smaller negative bias is therefore needed to reach the desired operating point. This suppresses tunnelling from the gate and hence the noise. The reduction in the density of ionized donors also strengthens the barrier to tunneling at a given applied voltage. Support for the model comes from our direct observation of the leakage current into a closed quantum dot, around $10^{-20} \mathrm{A}$ for this device. The current was detected by a neighboring quantum point contact, which showed monotonic steps in time associated with the tunneling of single electrons into the dot. If asymmetric gate voltages are applied, our model suggests that the noise will increase as a consequence of the more negative gate voltage applied to one of the gates to maintain the same device conductance. We observe exactly this behaviour in our experiments. △ Less

Submitted 14 June, 2005; v1 submitted 24 March, 2005; originally announced March 2005.

Comments: 8 pages, 7 figures

Journal ref: Phys. Rev. B 72, 115331 (2005)

Microwave induced resistance oscillations on a high-mobility 2DEG: absorption/reflection and temperature dam** experiments

Authors: S. A. Studenikin, M. Potemski, A. Sachrajda, M. Hilke, L. N. Pfeiffer, K. W. West

Abstract: In this work we address experimentally a number of unresolved issues related to microwave induced resistance oscillations (MIRO) and the zero-resistance states observed recently on very high-mobility 2D electron gases in GaAs/AlGaAs heterostructures. In particular, we examine electrodynamic effects via reflection/absorption experiments and study the exact waveform of MIRO and their dam** due t… ▽ More In this work we address experimentally a number of unresolved issues related to microwave induced resistance oscillations (MIRO) and the zero-resistance states observed recently on very high-mobility 2D electron gases in GaAs/AlGaAs heterostructures. In particular, we examine electrodynamic effects via reflection/absorption experiments and study the exact waveform of MIRO and their dam** due to temperature. It is shown that electrodynamic effects due to metallic-like reflection and plasmons are important producing a wide cyclotron resonance line and a number of oscillations which do not coincide with the MIRO. To describe the MIRO waveform a simple model was employed involving radiation-induced scattering with displacement. A very good correlation was found between the temperature dependencies of the quantum lifetime from MIRO and the transport scattering time from the electron mobility. The results are compared with measurements of Shubnikov-de Haas oscillations down to 30 mK on the same sample. △ Less

Submitted 12 November, 2004; originally announced November 2004.

Microwave absorption/reflection and magneto-transport experiments on high-mobility electron gas

Authors: S. A. Studenikin, M. Potemski, A. Sachrajda, M. Hilke, L. N. Pfeiffer, K. W. West

Abstract: We have performed simultaneous measurements of microwave absorption/reflection and magneto-transport characteristics of a high mobility two-dimensional electrons in GaAs/AlGaAs heterostructure in regime of Microwave-Induced Resistance Oscillations (MIROs). It is shown that the electrodynamic aspect of the problem is important in these experiments. In the absorption experiments a broad cyclotron… ▽ More We have performed simultaneous measurements of microwave absorption/reflection and magneto-transport characteristics of a high mobility two-dimensional electrons in GaAs/AlGaAs heterostructure in regime of Microwave-Induced Resistance Oscillations (MIROs). It is shown that the electrodynamic aspect of the problem is important in these experiments. In the absorption experiments a broad cyclotron resonance line was observed due to a large reflection from the highly conductive electron gas. There were no additional features observed related to absorption at harmonics of the cyclotron resonance. In near-field reflection experiments a very different oscillation pattern was revealed when compared to MIROs. The oscillation pattern observed in the reflection experiments is probably due to plasma effects occurring in a finite-size sample. The whole microscopic picture of MIROs is more complicated than simply a resonant absorption at harmonics of the cyclotron resonance. Nevertheless, the experimental observations are in good agreement with the model by Ryzhii et al. involving the photo-assisted scattering in the presence of a crossed magnetic field and dc bias. The observed dam** factor of MIROs may be attributed to a change in the electron mobility as a function of temperature. △ Less

Submitted 3 September, 2004; v1 submitted 16 April, 2004; originally announced April 2004.

Comments: to be published in IEEE Transactions On Nanotechnology

Weak antilocalization in a strained InGaAs/InP quantum well structure

Authors: S. A. Studenikin, P. T. Coleridge, P. J. Poole

Abstract: Weak antilocalization (WAL) effect due to the interference corrections to the conductivity has been studied experimentally in a strained InGaAs/InP quantum well structure. From measurements in tilted magnetic filed, it was shown that both weak localization and WAL features depend only on the normal component of the magnetic field for tilt angles less than 84 degrees. Weak antilocalization effect… ▽ More Weak antilocalization (WAL) effect due to the interference corrections to the conductivity has been studied experimentally in a strained InGaAs/InP quantum well structure. From measurements in tilted magnetic filed, it was shown that both weak localization and WAL features depend only on the normal component of the magnetic field for tilt angles less than 84 degrees. Weak antilocalization effect showed non-monotonous dependence on the gate voltage which could not be explained by either Rashba or Dresselhouse mechanisms of the spin-orbit coupling. To describe magnetic field dependence of the conductivity, it was necessary to assume that spin-orbit scattering time depends on the external magnetic field which quenches the spin precession around effective, spin-orbit related, magnetic fields. △ Less

Submitted 5 November, 2003; originally announced November 2003.

Comments: Presented at EP2DS 2003 (Nara), to be published in Physica E

Microwave radiation induced magneto-oscillations in the longitudinal and transverse resistance of a two dimensional electron gas

Authors: S. A. Studenikin, M. Potemski, P. T. Coleridge, A. Sachrajda, Z. R. Wasilewski

Abstract: We confirm the existance of magneto-resistance oscillations in a microwave-irradiated two-dimensional electron gas, first reported in a series of papers by Zhudov et al. and Mani et al. In our experiments, on a sample with a more moderate mobility, the microwave induced oscillations are observed not only in the longitudinal - but also in the transverse-resistance (Hall resistance). The phase of… ▽ More We confirm the existance of magneto-resistance oscillations in a microwave-irradiated two-dimensional electron gas, first reported in a series of papers by Zhudov et al. and Mani et al. In our experiments, on a sample with a more moderate mobility, the microwave induced oscillations are observed not only in the longitudinal - but also in the transverse-resistance (Hall resistance). The phase of the oscillations is such that the decrease (increase) in the longitudinal resistance is accompanied by an increase (decrease) in the absolute value of the Hall resistance. We believe that these new results provide valuable new information to better understand the origin of this interesting phenomenon. △ Less

Submitted 15 October, 2003; originally announced October 2003.

Comments: Accepted for publication in journal of Solid State Comunications

Journal ref: Solid State Comm. v.129, 341 (2004)

Anomalous spin-orbit effects in a strained InGaAs/InP quantum well structure

Authors: S. A. Studenikin, P. T. Coleridge, P. Poole, A. Sachrajda

Abstract: There currently is a large effort to explore spin-orbit effects in semiconductor structures with the ultimate goal of manipulating electron spins with gates. A search for materials with large spin-orbit coupling is therefore important. We report results of a study of spin-orbit effects in a strained InGaAs/InP quantum well. The spin-orbit relaxation time, determined from the weak antilocalizatio… ▽ More There currently is a large effort to explore spin-orbit effects in semiconductor structures with the ultimate goal of manipulating electron spins with gates. A search for materials with large spin-orbit coupling is therefore important. We report results of a study of spin-orbit effects in a strained InGaAs/InP quantum well. The spin-orbit relaxation time, determined from the weak antilocalization effect, was found to depend non-monotonically on gate voltage. The spin orbit scattering rate had a maximum value of $5\times 10^{10}s^{-1}$ at an electron density of $n=3\times 10^{15} m^{-2}$. The scattering rate decreased from this for both increasing and decreasing densities. The smallest measured value was approximately $10^9 s^{-1}$ at an electron concentration of $n=6\times 10^{15} m^{-2}$. This behavior could not be explained by either the Rashba nor the bulk Dresselhaus mechanisms but is attributed to asymmetry or strain effects at dissimilar quantum well interfaces. △ Less

Submitted 15 October, 2003; v1 submitted 19 March, 2003; originally announced March 2003.

Comments: total 12 pages including 4 figures

Journal ref: Pyblished in JETP Letters Vol. 77, No. 6, pp.311-316 (2003)

Experimental study of weak antilocalization effect in a high mobility InGaAs/InP quantum well

Authors: S. A. Studenikin, P. T. Coleridge, N. Ahmed, P. Poole, A. Sachrajda

Abstract: The magnetoresistance associated with quantum interference corrections in a high mobility, gated InGaAs/InP quantum well structure is studied as a function of temperature, gate voltage, and angle of the tilted magnetic field. Particular attention is paid to the experimental extraction of phase-breaking and spin-orbit scattering times when weak anti- localization effects are prominent. Compared w… ▽ More The magnetoresistance associated with quantum interference corrections in a high mobility, gated InGaAs/InP quantum well structure is studied as a function of temperature, gate voltage, and angle of the tilted magnetic field. Particular attention is paid to the experimental extraction of phase-breaking and spin-orbit scattering times when weak anti- localization effects are prominent. Compared with metals and low mobility semiconductors the characteristic magnetic field $B_{tr} = \hbar/4eD τ$ in high mobility samples is very small and the experimental dependencies of the interference effects extend to fields several hundreds of times larger. Fitting experimental results under these conditions therefore requires theories valid for arbitrary magnetic field. It was found, however, that such a theory was unable to fit the experimental data without introducing an extra, empirical, scale factor of about 2. Measurements in tilted magnetic fields and as a function of temperature established that both the weak localization and the weak anti-localization effects have the same, orbital origin. Fits to the data confirmed that the width of the low field feature, whether a weak localization or a weak anti-localization peak, is determined by the phase-breaking time and also established that the universal (negative) magnetoresistance observed in the high field limit is associated with a temperature independent spin-orbit scattering time. △ Less

Submitted 18 October, 2003; v1 submitted 17 June, 2002; originally announced June 2002.

Comments: 13 pages including 10 figures

Journal ref: PRB v.68, p. 035313 (2003)