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Highly thermally stable sub-20nm magnetic random-access memory based on perpendicular shape anisotropy
Authors:
N. Perrissin,
S. Lequeux,
N. Strelkov,
L. Vila,
L. Buda-Prejbeanu,
S. Auffret,
R. C. Sousa,
I. L. Prejbeanu,
B. Dieny
Abstract:
A new approach to increase the downsize scalability of perpendicular STT-MRAM is presented. It consists in significantly increasing the thickness of the storage layer in out-of-plane magnetized tunnel junctions (pMTJ) as compared to conventional pMTJ in order to induce a perpendicular shape anisotropy (PSA) in this layer. This PSA is obtained by depositing a thick ferromagnetic (FM) layer on top o…
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A new approach to increase the downsize scalability of perpendicular STT-MRAM is presented. It consists in significantly increasing the thickness of the storage layer in out-of-plane magnetized tunnel junctions (pMTJ) as compared to conventional pMTJ in order to induce a perpendicular shape anisotropy (PSA) in this layer. This PSA is obtained by depositing a thick ferromagnetic (FM) layer on top of an MgO/FeCoB based magnetic tunnel junction (MTJ) so that the thickness of the storage layer becomes of the order or larger than the diameter of the MTJ pillar. In contrast to conventional spin transfer torque magnetic random access memory (STT-MRAM) wherein the demagnetizing energy opposes the interfacial perpendicular magnetic anisotropy (iPMA), in these novel memory cells, both PSA and iPMA contributions favor out-of-plane orientation of the storage layer magnetization. Using thicker storage layers in these PSA-STT-MRAM has several advantages. Thanks to the PSA, very high and easily tunable thermal stability factors can be achieved, even down to sub-10 nm diameters. Moreover, low dam** material can be used for the thick FM material thus leading to a reduction of the write current. The paper describes this new PSA-STT-MRAM concept, practical realization of such memory arrays, magnetic characterization demonstrating thermal stability factor above 200 for MTJs as small as 8nm in diameter and possibility to maintain thermal stability factor above 60 down to 4nm diameter.
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Submitted 7 March, 2018;
originally announced March 2018.
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Impact of intergrain spin transfer torques due to huge thermal gradients on the performance of heat assisted magnetic recording
Authors:
Bernard Dieny,
Mair Chshiev,
Brian Charles,
Nikita Strelkov,
Alain Truong,
Olivier Fruchart,
Ali Hallal,
Jian Wang,
Yukiko K. Takahashi,
Tomohito Mizuno,
Kazuhiro Hono
Abstract:
Heat assisted magnetic recording (HAMR) is a new technology which uses temporary near field laser heating of the media during write to increase hard disk drive storage density. By using plasmonic antenna embedded in the write head, extremely high thermal gradient are created in the recording media (up to 10K/nm). State of the art HAMR media consists of grains of FePtX ordered alloys exhibiting hig…
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Heat assisted magnetic recording (HAMR) is a new technology which uses temporary near field laser heating of the media during write to increase hard disk drive storage density. By using plasmonic antenna embedded in the write head, extremely high thermal gradient are created in the recording media (up to 10K/nm). State of the art HAMR media consists of grains of FePtX ordered alloys exhibiting high perpendicular anisotropy separated by insulating grain boundaries. Nearby the plasmonic antenna, the difference of temperature between two 8nm wide neighboring grains in the media can reach 80K, representing a gigantic thermal gradient of ~40K/nm across the grain boundary. Such situations with much weaker thermal gradient (~1K/nm, already considered as very large) have already been studied in the field of spincaloritronics. There, it was shown that very large spin transfer torques due to thermal gradients can arise in magnetic tunnel junctions which can even yield magnetization switching. Considering that two neighboring grains separated by an insulating grain boundary in a HAMR media can be viewed as a magnetic tunnel junction and that the thermal gradients in HAMR are one to two orders of magnitude larger than those existing in conventional spincaloritronics, one may expect a major impact from these thermal torques on magnetization switching dynamics and therefore on HAMR recording performances. This paper combines theory, experiments aiming at determining the polarization of tunneling electrons across the media grain boundaries, and micromagnetic simulations of recording process. It is shown that the thermal in-plane torque can have a detrimental impact on the recording performances by favoring antiparallel magnetic alignment between neighboring grains during the media cooling. Implications on media design are discussed in order to limit the impact of these thermal torques.
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Submitted 8 December, 2017;
originally announced December 2017.
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Analytical description of ballistic spin currents and torques in magnetic tunnel junctions
Authors:
M. Chshiev,
A. Manchon,
A. Kalitsov,
N. Ryzhanova,
A. Vedyayev,
N. Strelkov,
W. H. Butler,
B. Dieny
Abstract:
In this work we demonstrate explicit analytical expressions for both charge and spin currents which constitute the 2x2 spinor in magnetic tunnel junctions with noncollinear magnetizations under applied voltage. The calculations have been performed within the free electron model in the framework of the Keldysh formalism and WKB approximation. We demonstrate that spin/charge currents and spin transf…
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In this work we demonstrate explicit analytical expressions for both charge and spin currents which constitute the 2x2 spinor in magnetic tunnel junctions with noncollinear magnetizations under applied voltage. The calculations have been performed within the free electron model in the framework of the Keldysh formalism and WKB approximation. We demonstrate that spin/charge currents and spin transfer torques are all explicitly expressed through only three irreducible quantities, without further approximations. The conditions and mechanisms of deviation from the conventional sine angular dependence of both spin currents and torques are shown and discussed. It is shown in the thick barrier approximation that all tunneling transport quantities can be expressed in an extremely simplified form via Slonczewski spin polarizations and our effective spin averaged interfacial transmission probabilities and effective out-of-plane polarizations at both interfaces. It is proven that the latter plays a key role in the emergence of perpendicular spin torque as well as in the angular dependence character of all spin and charge transport considered. It is demonstrated directly also that for any applied voltage, the parallel component of spin current at the FM/I interface is expressed via collinear longitudinal spin current components. Finally, spin transfer torque behavior is analyzed in a view of transverse characteristic length scales for spin transport.
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Submitted 22 September, 2015; v1 submitted 12 August, 2013;
originally announced August 2013.
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Artificial ferroelectricity due to anomalous Hall effect in magnetic tunnel junctions
Authors:
A. Vedyayev,
N. Ryzhanova,
N. Strelkov,
B. Dieny
Abstract:
We theoretically investigated Anomalous Hall Effect (AHE) and Spin Hall Effect (SHE) transversally to the insulating spacer O, in magnetic tunnel junctions of the form F/O/F where F are ferromagnetic layers and O represents a tunnel barrier. We considered the case of purely ballistic (quantum mechanical) transport, taking into account the assymetric scattering due to spin-orbit interaction in the…
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We theoretically investigated Anomalous Hall Effect (AHE) and Spin Hall Effect (SHE) transversally to the insulating spacer O, in magnetic tunnel junctions of the form F/O/F where F are ferromagnetic layers and O represents a tunnel barrier. We considered the case of purely ballistic (quantum mechanical) transport, taking into account the assymetric scattering due to spin-orbit interaction in the tunnel barrier. AHE and SHE in the considered case have a surface nature due to proximity effect. Their amplitude is in first order of the scattering potential. This contrasts with ferromagnetic metals wherein these effect are in second (side-jump scattering) and third (skew scattering) order on these potentials. The value of AHE voltage in insulating spacer may be much larger than in metallic ferromagnetic electrodes. For the antiparallel orientation of the magnetizations in the two F-electrodes, a spontaneous Hall voltage exists even at zero applied voltage. Therefore an insulating spacer sandwiched between two ferromagnetic layers can be considered as exhibiting a spontaneous ferroelectricity.
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Submitted 13 September, 2012;
originally announced September 2012.
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Spin Transfer Torques induced by Spin Hall Effect
Authors:
A. Vedyayev,
N. Strelkov,
M. Chshiev,
N. Ryzhanova,
B. Dieny
Abstract:
Spin accumulation and spin transfer torques induced by Spin Hall Effect in bi-layer structures comprising ferromagnetic and paramagnetic materials are theoretically investigated. The charge and spin diffusion equations taking into account spin-flip and spin Hall effect are formulated and solved analytically and numerically for in structures with simplified and complex geometry, respectively. It is…
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Spin accumulation and spin transfer torques induced by Spin Hall Effect in bi-layer structures comprising ferromagnetic and paramagnetic materials are theoretically investigated. The charge and spin diffusion equations taking into account spin-flip and spin Hall effect are formulated and solved analytically and numerically for in structures with simplified and complex geometry, respectively. It is demonstrated that spin torques could be efficiently produced by means of Spin Hall effect which may be further enhanced by modifying structure geometry.
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Submitted 12 August, 2011;
originally announced August 2011.
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Finite Element Modeling of Charge and Spin-currents in Magnetoresistive Pillars with Current Crowding Effects
Authors:
N. Strelkov,
A. Vedyayev,
D. Gusakova,
L. D. Buda-Prejbeanu,
M. Chshiev,
S. Amara,
A. Vaysset,
B. Dieny
Abstract:
The charge and spin diffusion equations taking into account spin-flip and spin-transfer torque were numerically solved using a finite element method in complex non-collinear geometry. This approach was used to study the spin-dependent transport in giant magnetoresistance metallic pillars sandwiched between extended electrodes as in magnetoresistive heads for hard disk drives. The charge current…
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The charge and spin diffusion equations taking into account spin-flip and spin-transfer torque were numerically solved using a finite element method in complex non-collinear geometry. This approach was used to study the spin-dependent transport in giant magnetoresistance metallic pillars sandwiched between extended electrodes as in magnetoresistive heads for hard disk drives. The charge current crowding around the boundaries between the electrodes and the pillar has a quite significant influence on the spin current.
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Submitted 2 February, 2010;
originally announced February 2010.
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Spin-current vortices in current-perpendicular-to-plane nanoconstricted spin-valves
Authors:
N. Strelkov,
A. Vedyayev,
N. Ryzhanova,
D. Gusakova,
L. D. Buda-Prejbeanu,
M. Chshiev,
S. Amara,
N. de Mestier,
C. Baraduc,
B. Dieny
Abstract:
The charge and spin diffusion equations taking into account spin-flip and spin-transfer torque were numerically solved using a finite element method in complex non-collinear geometry with strongly inhomogeneous current flow. As an illustration, spin-dependent transport through a non-magnetic nanoconstriction separating two magnetic layers was investigated. Unexpected results such as vortices of sp…
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The charge and spin diffusion equations taking into account spin-flip and spin-transfer torque were numerically solved using a finite element method in complex non-collinear geometry with strongly inhomogeneous current flow. As an illustration, spin-dependent transport through a non-magnetic nanoconstriction separating two magnetic layers was investigated. Unexpected results such as vortices of spin-currents in the vicinity of the nanoconstriction were obtained. The angular variations of magnetoresistance and spin-transfer torque are strongly influenced by the structure geometry.
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Submitted 13 July, 2011; v1 submitted 29 January, 2010;
originally announced January 2010.
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The two-bands model of the magnetic tunnel junctions in the Fe/Cr/MgO/Fe structure
Authors:
A. Vedyaev,
N. Ryzhanova,
N. Strelkov,
M. Chshiev,
L. Lystseva,
B. Dieny
Abstract:
In this paper we present theoretical studies of spin dependent transport in Fe/Cr/MgO/Fe tunnel junctions with non-collinear alignment of magnetizations of metallic layers comprising these MTJs. Calculations are performed with use of non-equilibrium Green function technique in the framework of Keldysh formalism. WKB approximation is used for wave and Green functions in the trapezoidal barrier re…
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In this paper we present theoretical studies of spin dependent transport in Fe/Cr/MgO/Fe tunnel junctions with non-collinear alignment of magnetizations of metallic layers comprising these MTJs. Calculations are performed with use of non-equilibrium Green function technique in the framework of Keldysh formalism. WKB approximation is used for wave and Green functions in the trapezoidal barrier region under applied voltage. Electronic structure of ferromagnetic electrodes is modeled with two bands model, i.e. with majority s-electrons and minority d-holes. Furthermore, we introduce s-d hybridization by calculating the corresponding perturbation corrections for the wave and Green functions.
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Submitted 3 December, 2009; v1 submitted 16 October, 2009;
originally announced October 2009.
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Diode effect in magnetic tunnel junctions
Authors:
F. Kanjouri,
N. Ryzhanova,
B. Dieny,
N. Strelkov,
A. Vedyaev
Abstract:
The influence on the I-V characteristics and tunnel magnetoresistance (TMR), of impurities embedded into the insulating barrier I separating the two ferromagnetic electrodes F of a magnetic tunnel junction, was theoretically investigated. When the energy of the electron's bound state at the impurity site is close to the Fermi energy, it is shown that the current and TMR are strongly enhanced in…
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The influence on the I-V characteristics and tunnel magnetoresistance (TMR), of impurities embedded into the insulating barrier I separating the two ferromagnetic electrodes F of a magnetic tunnel junction, was theoretically investigated. When the energy of the electron's bound state at the impurity site is close to the Fermi energy, it is shown that the current and TMR are strongly enhanced in the vicinity of the impurity. If the position of the impurity inside the barrier is asymmetric, e.g. closer to one of the interfaces F/I, the I-V characteristic exhibits a quasidiode behavior. The case of a single impurity and of a random distribution of impurities within a plane were both studied.
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Submitted 14 December, 2004;
originally announced December 2004.
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Magnetic tunnel junctions with impurities
Authors:
F. Kanjouri,
N. Ryzhanova,
B. Dieny,
N. Strelkov,
A. Vedyayev
Abstract:
The influence of impurities, embedded into the isolating spacer (I) between two ferromagnetic electrodes (F), on the I-V curve and tunnel magnetoresistance (TMR), is theoretically investigated. It is shown, that the current and TMR are strongly enhanced in the vicinity of the impurity under the condition that the energy of the electron's bound state on the impurity is close to the Fermi energy.…
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The influence of impurities, embedded into the isolating spacer (I) between two ferromagnetic electrodes (F), on the I-V curve and tunnel magnetoresistance (TMR), is theoretically investigated. It is shown, that the current and TMR are strongly enhanced in the vicinity of the impurity under the condition that the energy of the electron's bound state on the impurity is close to the Fermi energy. If the position of the impurity inside the barrier is asymmetric, e.g. closer to the one of the interfaces F/I the I-V curve exhibits quasidiode behavior.
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Submitted 17 November, 2004; v1 submitted 11 November, 2004;
originally announced November 2004.
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Extraordinary Hall effect in hybrid ferromagnetic/superconductor (F/S) bilayer
Authors:
N. Ryzhanova,
B. Dieny,
C. Lacroix,
N. Strelkov,
A. Vedyayev
Abstract:
Extraordinary Hall effect (EHE) in bilayer F/S(N) was investigated theoretically. The conductivity tensor $σ_{αβ}$ is calculated in the Kubo formalism with Green functions found as the solutions of the Gorkov equations. We considered diffuse transport in the ferromagnetic layer, taking into account as a main mechanism of electron resistivity s-d scattering. In this model Gorkov equations for s-e…
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Extraordinary Hall effect (EHE) in bilayer F/S(N) was investigated theoretically. The conductivity tensor $σ_{αβ}$ is calculated in the Kubo formalism with Green functions found as the solutions of the Gorkov equations. We considered diffuse transport in the ferromagnetic layer, taking into account as a main mechanism of electron resistivity s-d scattering. In this model Gorkov equations for s-electrons in the ferromagnetic layer remain linear and are solved easily. It is shown that Hall field $E^H$ for both F/S and F/N contacts are step-functions of the coordinate perpendicular to the planes of the layers and have zero value in S(N) layer. The Andreev reflection increases the value of Hall constant $R_s$ for F/S case. The value of the Hall constant is $R_H^{F/S} = R_H^{bulk} (σ^{\uparrow} + σ^{\downarrow})^2 / 4 σ^{\uparrow}σ^{\downarrow}$, where $σ^{\uparrow}$ and $σ^{\downarrow}$ are conductivities of electrons with up and down spins, and $R_H^{bulk}$ is the Hall constant in the bulk ferromagnetic metal. In fact, $R_H^{F/S}$ coincides with EHE constant of the bilayer of two ferromagnetic metals with equal thickness and opposite directions of their magnetizations. So we can make a conclusion, that the ideal interface between ferromagnetic metal and superconductor may be considered like a mirror with inversion in spin space.
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Submitted 21 August, 2001; v1 submitted 9 August, 2001;
originally announced August 2001.
