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Quantum transport in a multi-path graphene Aharonov-Bohm inteferometer
Authors:
Cynthia I. Osuala,
Zitao Tang,
Stefan Strauf,
Eui-Hyeok Yang,
Chunlei Qu
Abstract:
We investigate the quantum transport dynamics of electrons in a multi-path Aharonov-Bohm interferometer comprising several parallel graphene nanoribbons. At low magnetic field strengths, the conductance displays a complex oscillatory behavior stemming from the interference of electron wave functions from different paths, reminiscent of the diffraction grating in optics. With increasing magnetic fi…
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We investigate the quantum transport dynamics of electrons in a multi-path Aharonov-Bohm interferometer comprising several parallel graphene nanoribbons. At low magnetic field strengths, the conductance displays a complex oscillatory behavior stemming from the interference of electron wave functions from different paths, reminiscent of the diffraction grating in optics. With increasing magnetic field strength, certain nanoribbons experience transport blockade, leading to conventional Aharonov-Bohm oscillations arising from two-path interference. We also discuss the impact of edge effects and the influence of finite temperature. Our findings offer valuable insights for experimental investigations of quantum transport in multi-path devices and their potential application for interferometry and quantum sensing.
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Submitted 12 September, 2023;
originally announced September 2023.
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Coupling Spin Defects in a Layered Material to Nanoscale Plasmonic Cavities
Authors:
Noah Mendelson,
Ritika Ritika,
Mehran Kianinia,
John Scott,
Sejeong Kim,
Johannes E. Fröch,
Camilla Gazzana,
Mika Westerhausen,
Licheng Xiao,
Seyed Sepehr Mohajerani,
Stefan Strauf,
Milos Toth,
Igor Aharonovich,
Zai-Quan Xu
Abstract:
Spin defects in hexagonal boron nitride, and specifically the negatively charged boron vacancy (VB) centres, are emerging candidates for quantum sensing. However, the VB defects suffer from low quantum efficiency and as a result exhibit weak photoluminescence. In this work, we demonstrate a scalable approach to dramatically enhance the VB- emission by coupling to a plasmonic gap cavity. The plasmo…
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Spin defects in hexagonal boron nitride, and specifically the negatively charged boron vacancy (VB) centres, are emerging candidates for quantum sensing. However, the VB defects suffer from low quantum efficiency and as a result exhibit weak photoluminescence. In this work, we demonstrate a scalable approach to dramatically enhance the VB- emission by coupling to a plasmonic gap cavity. The plasmonic cavity is composed of a flat gold surface and a silver cube, with few-layer hBN flakes positioned in between. Employing these plasmonic cavities, we extracted two orders of magnitude in photoluminescence enhancement associated with a corresponding 2 fold enhancement in optically detected magnetic resonance contrast. The work will be pivotal to progress in quantum sensing employing 2D materials, and realisation of nanophotonic devices with spin defects in hexagonal boron nitride.
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Submitted 5 August, 2021;
originally announced August 2021.
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Single photon emission in $WSe_2$ up 160 K by quantum yield control
Authors:
Yue Luo,
Na Liu,
James C. Hone,
Stefan Strauf
Abstract:
Two dimensional semiconductors hosting strain-induced quantum emitters offer unique abilities to achieve scalable architectures for deterministic coupling to nanocavities and waveguides that are required to enable chip-based quantum information processing technologies. A severe drawback remains that exciton emission from quantum emitters in $WSe_2$ quenches beyond 30 K, which requires cryogenic co…
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Two dimensional semiconductors hosting strain-induced quantum emitters offer unique abilities to achieve scalable architectures for deterministic coupling to nanocavities and waveguides that are required to enable chip-based quantum information processing technologies. A severe drawback remains that exciton emission from quantum emitters in $WSe_2$ quenches beyond 30 K, which requires cryogenic cooling. Here we demonstrate an approach to increase the temperature survival of exciton quantum emitters in $WSe_2$ that is based on maximizing the emitter quantum yield. Utilizing optimized material growth that leads to reduced density of nonradiative defects as well as coupling of the exciton emission to plasmonic nanocavities modes, we achieve average quantum yields up to 44%, thermal activation energies up to 92 meV, and single photon emission signatures up to temperatures of 160 K. At these values non-cryogenic cooling with thermo-electric chips becomes already feasible, while quantitative analysis shows that room temperature operation is within reach through active strain engineering.
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Submitted 28 February, 2019;
originally announced March 2019.
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Deterministic coupling of site-controlled quantum emitters in monolayer semiconductors to plasmonic nanocavities
Authors:
Yue Luo,
Gabriella D. Shepard,
Jenny V. Ardelean,
James C. Hone,
Stefan Strauf
Abstract:
Solid-state single-quantum emitters are a crucial resource for on-chip photonic quantum technologies and require efficient cavity-emitter coupling to realize quantum networks beyond the single-node level. Previous approaches to enhance light-matter interactions rely on forming nanocavities around randomly located quantum dots or color centers but lack spatial control of the quantum emitter itself…
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Solid-state single-quantum emitters are a crucial resource for on-chip photonic quantum technologies and require efficient cavity-emitter coupling to realize quantum networks beyond the single-node level. Previous approaches to enhance light-matter interactions rely on forming nanocavities around randomly located quantum dots or color centers but lack spatial control of the quantum emitter itself that is required for scaling. Here we demonstrate a deterministic approach to achieve Purcell-enhancement at lithographically defined locations using the sharp corner of a metal nanocube for both electric field enhancement and to deform a two-dimensional material. For a 3 by 4 array of strain-induced exciton quantum emitters formed into monolayer WSe2 we show spontaneous emission rate enhancement with Purcell-factors (FP) up to FP=1050 (average FP=272), single-photon purification, and cavity-enhanced quantum yields increasing from initially 1 % to 15 %. The utility of our nanoplasmonic platform is applicable to other 2D material, including boron nitride, opening new inroads in quantum photonics.
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Submitted 17 April, 2018;
originally announced April 2018.
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Trion Species-Resolved Quantum Beats in MoSe2
Authors:
Gabriella D. Shepard,
Jenny V. Ardelean,
Daniel A. Rhodes,
X. -Y. Zhu,
James C. Hone,
Stefan Strauf
Abstract:
Monolayer photonic materials offer a tremendous potential for on-chip optoelectronic devices. Their realization requires knowledge of optical coherence properties of excitons and trions that have so far been limited to nonlinear optical experiments carried out with strongly inhomogenously broadened material. Here we employ h-BN encapsulated and electrically gated MoSe2 to reveal coherence properti…
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Monolayer photonic materials offer a tremendous potential for on-chip optoelectronic devices. Their realization requires knowledge of optical coherence properties of excitons and trions that have so far been limited to nonlinear optical experiments carried out with strongly inhomogenously broadened material. Here we employ h-BN encapsulated and electrically gated MoSe2 to reveal coherence properties of trion-species directly in the linear optical response. Autocorrelation measurements reveal long dephasing times up to T2=1.16+-0.05 ps for positively charged excitons. Gate dependent measurements provide evidence that the positively-charged trion forms via spatially localized hole states making this trion less prone to dephasing in the presence of elevated hole carrier concentrations. Quantum beat signatures demonstrate coherent coupling between excitons and trions that have a dephasing time up to 0.6 ps, a two-fold increase over those in previous reports. A key merit of the prolonged exciton/trion coherences is that they were achieved in a linear optical experiment, and thus are directly relevant to applications in nanolasers, coherent control, and on-chip quantum information processing requiring long photon coherence.
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Submitted 11 September, 2017;
originally announced September 2017.
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Near-unity quantum yield from carbon nanotube excitons coupled to plasmonic nanocavities
Authors:
Yue Luo,
Ehsaneh D. Ahmadi,
Kamran Shayan,
Yichen Ma,
Kevin S. Mistry,
Changjian Zhang,
James Hone,
Jeffrey L. Blackburn,
Stefan Strauf
Abstract:
Single-walled carbon nanotubes (SWCNTs) are promising absorbers and emitters to enable novel photonic and optoelectronic applications but are also known to severely suffer from low optical quantum yields. Here we demonstrate SWCNTs excitons coupled to plasmonic nanocavities reaching deeply into the Purcell regime with FP=234 (average FP=76), near unity quantum yields of 70% (average 41%), and a ph…
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Single-walled carbon nanotubes (SWCNTs) are promising absorbers and emitters to enable novel photonic and optoelectronic applications but are also known to severely suffer from low optical quantum yields. Here we demonstrate SWCNTs excitons coupled to plasmonic nanocavities reaching deeply into the Purcell regime with FP=234 (average FP=76), near unity quantum yields of 70% (average 41%), and a photon emission rate of 1.7 MHz into the first lens. The measured ultra-narrow exciton linewidth (18 micro eV) implies furthermore generation of indistinguishable single photons from a SWCNT. To demonstrate utility beyond quantum light sources we show that nanocavity-coupled SWCNTs perform as single-molecule thermometers detecting plasmonically induced heat (Delta T=150K) in a unique interplay of excitons, phonons, and plasmons at the nanoscale.
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Submitted 4 May, 2017;
originally announced May 2017.
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Approaching the Intrinsic Photoluminescence Linewidth in Transition Metal Dichalcogenide Monolayers
Authors:
Obafunso A. Ajayi,
Jenny V. Ardelean,
Gabriella D. Shepard,
Jue Wang,
Abhinandan Antony,
Takeshi Taniguchi,
Kenji Watanabe,
Tony F. Heinz,
Stefan Strauf,
X. -Y. Zhu,
James C. Hone
Abstract:
Excitonic states in monolayer transition metal dichalcogenides (TMDCs) have been the subject of extensive recent interest. Their intrinsic properties can, however, be obscured due to the influence of inhomogeneity in the external environment. Here we report methods for fabricating high quality TMDC monolayers with narrow photoluminescence (PL) linewidth approaching the intrinsic limit. We find tha…
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Excitonic states in monolayer transition metal dichalcogenides (TMDCs) have been the subject of extensive recent interest. Their intrinsic properties can, however, be obscured due to the influence of inhomogeneity in the external environment. Here we report methods for fabricating high quality TMDC monolayers with narrow photoluminescence (PL) linewidth approaching the intrinsic limit. We find that encapsulation in hexagonal boron nitride (h-BN) sharply reduces the PL linewidth, and that passivation of the oxide substrate by an alkyl monolayer further decreases the linewidth and also minimizes the charged exciton (trion) peak. The combination of these sample preparation methods results in much reduced spatial variation in the PL emission, with a full-width-at-half-maximum as low as 1.7 meV. Analysis of the PL line shape yields a homogeneous width of 1.43$\pm$0.08 meV and inhomogeneous broadening of 1.1$\pm$0.3 meV.
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Submitted 20 February, 2017;
originally announced February 2017.
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Nanobubble induced formation of quantum emitters in monolayer semiconductors
Authors:
Gabriella D. Shepard,
Obafunso Ajayi,
Xiangzhi Li,
X. -Y. Zhu,
James Hone,
Stefan Strauf
Abstract:
The recent discovery of exciton quantum emitters in transition metal dichalcogenides (TMDCs) has triggered renewed interest of localized excitons in low-dimensional systems. Open questions remain about the microscopic origin previously attributed to dopants and/or defects as well as strain potentials. Here we show that the quantum emitters can be deliberately induced by nanobubble formation in WSe…
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The recent discovery of exciton quantum emitters in transition metal dichalcogenides (TMDCs) has triggered renewed interest of localized excitons in low-dimensional systems. Open questions remain about the microscopic origin previously attributed to dopants and/or defects as well as strain potentials. Here we show that the quantum emitters can be deliberately induced by nanobubble formation in WSe2 and BN/WSe2 heterostructures. Correlations of atomic-force microscope and hyperspectral photoluminescence images reveal that the origin of quantum emitters and trion disorder is extrinsic and related to 10 nm tall nanobubbles and 70 nm tall wrinkles, respectively. We further demonstrate that hot stam** results in the absence of 0D quantum emitters and trion disorder. The demonstrated technique is useful for advances in nanolasers and deterministic formation of cavity-QED systems in monolayer materials.
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Submitted 19 December, 2016;
originally announced December 2016.
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Prolonged spontaneous emission and dephasing of localized excitons in air-bridged carbon nanotubes
Authors:
Ibrahim Sarpkaya,
Zhengyi Zhang,
William Walden-Newman,
Xuesi Wang,
James Hone,
Chee Wei Wong,
Stefan Strauf
Abstract:
The bright exciton emission of semiconducting carbon nanotubes is appealing for optoelectronic and quantum photonic devices as well as fundamental studies of light-matter interaction in one-dimensional nanostructures. The photophysics of excitons in carbon nanotubes till date is however largely affected by extrinsic effects of the dielectric environment. Here we carried out time-resolved photolumi…
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The bright exciton emission of semiconducting carbon nanotubes is appealing for optoelectronic and quantum photonic devices as well as fundamental studies of light-matter interaction in one-dimensional nanostructures. The photophysics of excitons in carbon nanotubes till date is however largely affected by extrinsic effects of the dielectric environment. Here we carried out time-resolved photoluminescence measurements over 14 orders of magnitude for ultra-clean carbon nanotubes bridging an airgap over pillar posts. Our measurements demonstrate a new regime of intrinsic exciton photophysics with prolonged spontaneous emission times up to T1=18 ns, between one to two orders of magnitude better than prior measurements and in agreement with values first hypothesized by theorists about a decade ago. Further we establish for the first time the exciton decoherence times of individual nanotubes in the time-domain and found four-fold prolonged values up to T2=2.1 ps compared to ensemble measurements. These first observations motivate new discussions about the magnitude of the intrinsic dephasing mechanism while the prolonged exciton dynamics is promising for device applications.
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Submitted 1 July, 2013;
originally announced July 2013.
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Feedback and harmonic locking of slot-type optomechanical oscillators to external low-noise reference clocks
Authors:
Jiangjun Zheng,
Ying Li,
Noam Goldberg,
Mickey McDonald,
Xingsheng Luan,
Archita Hati,
Ming Lu,
Stefan Strauf,
Tanya Zelevinsky,
David A. Howe,
Chee Wei Wong
Abstract:
We demonstrate feedback and harmonic locking of chip-scale slot-type optomechanical oscillators to external low-noise reference clocks, with suppressed timing jitter by three orders of magnitude. The feedback and compensation techniques significantly reduce the close-to-carrier phase noise, especially within the locking bandwidth for the integral root-mean-square timing jitter. Harmonic locking vi…
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We demonstrate feedback and harmonic locking of chip-scale slot-type optomechanical oscillators to external low-noise reference clocks, with suppressed timing jitter by three orders of magnitude. The feedback and compensation techniques significantly reduce the close-to-carrier phase noise, especially within the locking bandwidth for the integral root-mean-square timing jitter. Harmonic locking via high-order carrier signals is also demonstrated with similar phase noise and integrated root-mean-square timing jitter reduction. The chip-scale optomechanical oscillators are tunable over an 80-kHz range by tracking the reference clock, with potential applications in tunable radio-frequency photonics platforms.
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Submitted 8 March, 2013;
originally announced March 2013.
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Quantum Transport in Graphene Nanoribbons with Realistic Edges
Authors:
Patrick Hawkins,
Milan Begliarbekov,
Marko Zivkovic,
Stefan Strauf,
Christopher P. Search
Abstract:
Due to their unique electrical properties, graphene nanoribbons (GNRs) show great promise as the building blocks of novel electronic devices. However, these properties are strongly dependent on the geometry of the edges of the graphene devices. Thus far only zigzag and armchair edges have been extensively studied. However, several other self passivating edge reconstructions are possible, and were…
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Due to their unique electrical properties, graphene nanoribbons (GNRs) show great promise as the building blocks of novel electronic devices. However, these properties are strongly dependent on the geometry of the edges of the graphene devices. Thus far only zigzag and armchair edges have been extensively studied. However, several other self passivating edge reconstructions are possible, and were experimentally observed. Here we utilize the Nonequilibrium Green's Function (NEGF) technique in conjunction with tight binding methods to model quantum transport through armchair, zigzag, and several other self-passivated edge reconstructions. In addition we consider the experimentally relevant cases of mixed edges, where random combinations of possible terminations exist on a given GNR boundary. We find that transport through GNR's with self-passivating edge reconstructions is governed by the sublattice structure of the edges, in a manner similar to their parent zigzag or armchair configurations. Furthermore, we find that the reconstructed armchair GNR's have a larger band gap energy than pristine armchair edges and are more robust against edge disorder. These results offer novel insights into the transport in GNRs with realistic edges and are thus of paramount importance in the development of GNR based devices.
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Submitted 16 August, 2012;
originally announced August 2012.
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Localized States and Resultant Band Bending in Graphene Antidot Superlattices
Authors:
Milan Begliarbekov,
Onejae Sul,
John J. Santanello,
Nan Ai,
Xi Zhang,
Eui-Hyeok Yang,
Stefan Strauf
Abstract:
We fabricated dye sensitized graphene antidot superlattices with the purpose of elucidating the role of the localized edge state density. The fluorescence from deposited dye molecules was found to strongly quench as a function of increasing antidot filling fraction, whereas it was enhanced in unpatterned but electrically back-gated samples. This contrasting behavior is strongly indicative of a bui…
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We fabricated dye sensitized graphene antidot superlattices with the purpose of elucidating the role of the localized edge state density. The fluorescence from deposited dye molecules was found to strongly quench as a function of increasing antidot filling fraction, whereas it was enhanced in unpatterned but electrically back-gated samples. This contrasting behavior is strongly indicative of a built-in lateral electric field that accounts for fluorescence quenching as well as p-type do**. These findings are of great interest for light-harvesting applications that require field separation of electron-hole pairs.
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Submitted 24 February, 2011;
originally announced February 2011.
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Quantum Inductance and High Frequency Oscillators in Graphene Nanoribbons
Authors:
Milan Begliarbekov,
Stefan Strauf,
Christopher P Search
Abstract:
Here we investigate high frequency AC transport through narrow graphene nanoribbons with topgate potentials that form a localized quantum dot. We show that as a consequence of the finite dwell time of an electron inside the quantum dot (QD), the QD behaves like a classical inductor at sufficiently high frequencies ω\gtrsim50 GHz. When the geometric capacitance of the topgate and the quantum capaci…
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Here we investigate high frequency AC transport through narrow graphene nanoribbons with topgate potentials that form a localized quantum dot. We show that as a consequence of the finite dwell time of an electron inside the quantum dot (QD), the QD behaves like a classical inductor at sufficiently high frequencies ω\gtrsim50 GHz. When the geometric capacitance of the topgate and the quantum capacitance of the nanoribbon are accounted for, the admittance of the device behaves like a classical serial RLC circuit with resonant frequencies ω\sim100-900 GHz and Q-factors greater than 10^{6}. These results indicate that graphene nanoribbons can serve as all-electronic ultra-high frequency oscillators and filters thereby extending the reach of high frequency electronics into new domains.
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Submitted 16 February, 2011;
originally announced February 2011.
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Aperiodic conductivity oscillations in quasi-ballistic graphene heterojunctions
Authors:
Milan Begliarbekov,
Onejae Sul,
Nan Ai,
Eui-Hyeok Yang,
Stefan Strauf
Abstract:
We observe conductivity oscillations with aperiodic spacing to only one side of the tunneling current in a dual-gated graphene field effect transistor with an n-p-n type potential barrier. The spacing and width of these oscillatoins were found to be inconsistent with pure Farbry-Perot-type interferences, but are in quantitative agreement with theoretical predictions that attribute them to resonant…
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We observe conductivity oscillations with aperiodic spacing to only one side of the tunneling current in a dual-gated graphene field effect transistor with an n-p-n type potential barrier. The spacing and width of these oscillatoins were found to be inconsistent with pure Farbry-Perot-type interferences, but are in quantitative agreement with theoretical predictions that attribute them to resonant tunneling through quasi-bound impurity states. This observation may be understood as another signature of Klein tunneling in graphene heterojunctions and is of importance for future development and modeling of graphene based nanoelectronic devices.
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Submitted 8 September, 2010;
originally announced September 2010.
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Transconductance and Coulomb blockade properties of in-plane grown carbon nanotube field effect transistors
Authors:
Nan Ai,
Onejae Sul,
Milan Begliarbekov,
Qiang Song,
Kitu Kumar,
Daniel S. Choi,
Eui-Hyeok Yang,
Stefan Strauf
Abstract:
Single electron transistors (SETs) made from single wall carbon nanotubes (SWCNTs) are promising for quantum electronic devices operating with ultra-low power consumption and allow fundamental studies of electron transport. We report on SETs made by registered in-plane growth utilizing tailored nanoscale catalyst patterns and chemical vapor deposition. Metallic SWCNTs have been removed by an elect…
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Single electron transistors (SETs) made from single wall carbon nanotubes (SWCNTs) are promising for quantum electronic devices operating with ultra-low power consumption and allow fundamental studies of electron transport. We report on SETs made by registered in-plane growth utilizing tailored nanoscale catalyst patterns and chemical vapor deposition. Metallic SWCNTs have been removed by an electrical burn-in technique and the common gate hysteresis was removed using PMMA and baking, leading to field effect transistors with large on/off ratios up to 10^5. Further segmentation into 200 nm short semiconducting SWCNT devices created quantum dots which display conductance oscillations in the Coulomb blockade regime. The demonstrated utilization of registered in-plane growth opens possibilities to create novel SET device geometries which are more complex, i.e. laterally ordered and scalable, as required for advanced quantum electronic devices.
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Submitted 7 July, 2010;
originally announced July 2010.
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Determination of Edge Purity in Bilayer Graphene Using micro-Raman Spectroscopy
Authors:
Milan Begliarbekov,
Onejae Sul,
Sokratis Kalliakos,
Eui-Hyeok Yang,
Stefan Strauf
Abstract:
Polarization resolved micro-Raman spectroscopy was carried out at the edges of bilayer graphene. We find strong dependence of the intensity of the G band on the incident laser polarization, with its intensity dependence being 90 degrees out of phase for the armchair and zigzag case, in accordance with theoretical predictions. For the case of mixed-state edges we demonstrate that the polarization c…
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Polarization resolved micro-Raman spectroscopy was carried out at the edges of bilayer graphene. We find strong dependence of the intensity of the G band on the incident laser polarization, with its intensity dependence being 90 degrees out of phase for the armchair and zigzag case, in accordance with theoretical predictions. For the case of mixed-state edges we demonstrate that the polarization contrast reflects the fractional composition of armchair and zigzag edges, providing a monitor of edge purity, which is an important parameter for the development of efficient nanoelectronic devices.
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Submitted 29 June, 2010;
originally announced June 2010.
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Validation of Lasing in Active Nanocavities
Authors:
Yong-Seok Choi,
Matthew T. Rakher,
Kevin Hennessy,
Stefan Strauf,
Antonio Badolato,
Pierre M. Petroff,
Dirk Bouwmeester,
Evelyn L. Hu
Abstract:
An unambiguous proof of lasing in an active nanocavity with ultrahigh spontaneous emission coupling factor (beta = 0.65) is presented. To distinguish the subtle lasing threshold features from possible material-related phenomena, such as saturable absorption in the gain medium, a series of active nanocavities with different values of beta have been designed to systematically approach the high-bet…
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An unambiguous proof of lasing in an active nanocavity with ultrahigh spontaneous emission coupling factor (beta = 0.65) is presented. To distinguish the subtle lasing threshold features from possible material-related phenomena, such as saturable absorption in the gain medium, a series of active nanocavities with different values of beta have been designed to systematically approach the high-beta device. The demonstration of the lasing threshold is obtained through the observation of the transition from thermal to coherent light photon statistics that is well understood and identified in the beta << 1 lasing regime. The systematic investigation allows a more definitive validation of the onset of lasing in these active nanocavities.
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Submitted 24 January, 2006; v1 submitted 24 January, 2006;
originally announced January 2006.
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Self-tuned quantum dot gain in photonic crystal lasers
Authors:
S. Strauf,
K. Hennessy,
M. T. Rakher,
Y. -S. Choi,
A. Badolato,
L. C. Andreani,
E. L. Hu,
P. M. Petroff,
D. Bouwmeester
Abstract:
We demonstrate that very few (1 to 3) quantum dots as a gain medium are sufficient to realize a photonic crystal laser based on a high-quality nanocavity. Photon correlation measurements show a transition from a thermal to a coherent light state proving that lasing action occurs at ultra-low thresholds. Observation of lasing is unexpected since the cavity mode is in general not resonant with the…
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We demonstrate that very few (1 to 3) quantum dots as a gain medium are sufficient to realize a photonic crystal laser based on a high-quality nanocavity. Photon correlation measurements show a transition from a thermal to a coherent light state proving that lasing action occurs at ultra-low thresholds. Observation of lasing is unexpected since the cavity mode is in general not resonant with the discrete quantum dot states and emission at those frequencies is suppressed. In this situation, the quasi-continuous quantum dot states become crucial since they provide an energy-transfer channel into the lasing mode, effectively leading to a self-tuned resonance for the gain medium.
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Submitted 20 November, 2005;
originally announced November 2005.
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Frequency control of photonic crystal membrane resonators by mono-layer deposition
Authors:
Stefan Strauf,
Matthew T. Rakher,
Itai Carmeli,
Kevin Hennessy,
Cedrik Meier,
Antonio Badolato,
Michiel J. A. DeDood,
Pierre M. Petroff,
Evelyn L. Hu,
Beth Gwynn,
Dirk Bouwmeester
Abstract:
We study the response of GaAs photonic crystal membrane resonators to thin film deposition. Slow spectral shifts of the cavity mode of several nanometers are observed at low temperatures, caused by cryo-gettering of background molecules. Heating the membrane resets the drift and shielding will prevent drift altogether. In order to explore the drift as a tool to detect surface layers, or to inten…
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We study the response of GaAs photonic crystal membrane resonators to thin film deposition. Slow spectral shifts of the cavity mode of several nanometers are observed at low temperatures, caused by cryo-gettering of background molecules. Heating the membrane resets the drift and shielding will prevent drift altogether. In order to explore the drift as a tool to detect surface layers, or to intentionally shift the cavity resonance frequency, we studied the effect of self-assembled monolayers of polypeptide molecules attached to the membranes. The 2 nm thick monolayers lead to a discrete step in the resonance frequency and partially passivate the surface.
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Submitted 11 August, 2005;
originally announced August 2005.
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Photon statistics from coupled quantum dots
Authors:
Brian D. Gerardot,
Stefan Strauf,
Michiel J. A. de Dood,
Andrey M. Bychkov,
Antonio Badolato,
Kevin Hennessy,
Evelyn L. Hu,
Dirk Bouwmeester,
Pierre M. Petroff
Abstract:
We present an optical study of closely-spaced self-assembled InAs/GaAs quantum dots. The energy spectrum and correlations between photons subsequently emitted from a single pair provide not only clear evidence of coupling between the quantum dots but also insight into the coupling mechanism. Our results are in agreement with recent theories predicting that tunneling is largely suppressed between…
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We present an optical study of closely-spaced self-assembled InAs/GaAs quantum dots. The energy spectrum and correlations between photons subsequently emitted from a single pair provide not only clear evidence of coupling between the quantum dots but also insight into the coupling mechanism. Our results are in agreement with recent theories predicting that tunneling is largely suppressed between nonidentical quantum dots and that the interaction is instead dominated by dipole-dipole coupling and phonon-assisted energy transfer processes.
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Submitted 25 July, 2005;
originally announced July 2005.
