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Laser-induced magnonic band gap formation and control in YIG/GaAs heterostructure
Authors:
K. Bublikov,
M. Mruczkiewicz,
E. N. Beginin,
M. Tapajna,
D. Gregušová,
M. Kučera,
F. Gucmann,
S. Krylov,
A. I. Stognij,
S. Korchagin,
S. A. Nikitov,
A. V. Sadovnikov
Abstract:
We demonstrate the laser-induced control over spin-wave (SW) transport in the magnonic crystal (MC) waveguide formed from the semiconductor slab placed on the ferrite film. We considered bilayer MC with periodical grooves performed on the top of the n-type gallium arsenide slab side that oriented to the yttrium iron garnet film. To observe the appearance of magnonic gap induced by laser radiation,…
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We demonstrate the laser-induced control over spin-wave (SW) transport in the magnonic crystal (MC) waveguide formed from the semiconductor slab placed on the ferrite film. We considered bilayer MC with periodical grooves performed on the top of the n-type gallium arsenide slab side that oriented to the yttrium iron garnet film. To observe the appearance of magnonic gap induced by laser radiation, the fabricated structure was studied by the use of microwave spectroscopy and Brillouin light-scattering. We perform detailed numerical studies of this structure. We showed that the optical control of the magnonic gaps (frequency width and position) is related to the variation of the charge carriers' concentration in GaAs. We attribute these to nonreciprocity of SW transport in the layered structure. Nonreciprocity was induced by the laser exposure of the GaAs slab due to SWs' induced electromagnetic field screening by the optically-generated charge carriers. We showed that SW dispersion, nonreciprocity, and magnonic band gap position and width in the ferrite-semiconductor magnonic crystal can be modified in a controlled manner by laser radiation. Our results show the possibility of the integration of magnonics and semiconductor electronics on the base of YIG/GaAs structures.
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Submitted 10 February, 2023;
originally announced February 2023.
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Giant widening of interface magnetic layer in almost compensated iron garnet
Authors:
Y. B. Kudasov,
M. V. Logunov,
R. V. Kozabaranov,
I. V. Makarov,
V. V. Platonov,
O. M. Surdin,
D. A. Maslov,
A. S. Korshunov,
I. S. Strelkov,
A. I. Stognij,
V. D. Selemir,
S. A. Nikitov
Abstract:
A two-sublattice ferrimagnet undergoes a transition from a collinear to canted magnetic phase at magnetic field oriented along an easy magnetization direction. In this work, we study the transition by means of the magneto-optical Faraday effect in a thin film of compensated iron garnet (Lu$_{3-{\rm{x}}}$Bi$_{\rm{x}}$)(Fe$_{5-{\rm{y}}-{\rm{z}}}$Ga$_{\rm{y}}$Al$_{\rm{z}}$)O$_{12}$ grown on Gd$_3$Ga…
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A two-sublattice ferrimagnet undergoes a transition from a collinear to canted magnetic phase at magnetic field oriented along an easy magnetization direction. In this work, we study the transition by means of the magneto-optical Faraday effect in a thin film of compensated iron garnet (Lu$_{3-{\rm{x}}}$Bi$_{\rm{x}}$)(Fe$_{5-{\rm{y}}-{\rm{z}}}$Ga$_{\rm{y}}$Al$_{\rm{z}}$)O$_{12}$ grown on Gd$_3$Ga$_5$O$_{12}$ substrate. In the immediate vicinity of the compensation temperature a precursor of the transition with a complex shape was observed. Using a special sample with variable thickness we demonstrate an interfacial origin of the precursor. Diffusion of gadolinium from the substrate into the film forms a thin intermixed layer with enhanced magnetization. It induces an extended inhomogeneous magnetic structure in the film. A two-step shape of the precursor appears due to an easy-plane anisotropy of the intermixed magnetic layer. We emphasize that an effective width of the inhomogeneous magnetization distribution in the film grows enormously while approaching the compensation temperature.
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Submitted 1 January, 2022;
originally announced January 2022.
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Surface plasmon-enhanced photo-magnetic excitation of spin dynamics in Au/YIG:Co magneto-plasmonic crystals
Authors:
Artsiom Kazlou,
Alexander L. Chekhov,
Alexander I. Stognij,
Ilya Razdolski,
Andrzej Stupakiewicz
Abstract:
We report strong amplification of photo-magnetic spin precession in Co-doped YIG employing a surface plasmon excitation in a metal-dielectric magneto-plasmonic crystal. Plasmonic enhancement is accompanied by the localization of the excitation within the 300~nm-thick layer inside the transparent dielectric garnet. Experimental results are nicely reproduced by numerical simulations of the photo-mag…
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We report strong amplification of photo-magnetic spin precession in Co-doped YIG employing a surface plasmon excitation in a metal-dielectric magneto-plasmonic crystal. Plasmonic enhancement is accompanied by the localization of the excitation within the 300~nm-thick layer inside the transparent dielectric garnet. Experimental results are nicely reproduced by numerical simulations of the photo-magnetic excitation. Our findings demonstrate the magneto-plasmonic concept of subwavelength localization and amplification of the photo-magnetic excitation in dielectric YIG:Co and open up a path to all-optical magnetization switching below diffraction limit with energy efficiency approaching the fundamental limit for magnetic memories.
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Submitted 2 April, 2021;
originally announced April 2021.
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Ultrafast transport and relaxation of hot plasmonic electrons in metal-dielectric heterostructures
Authors:
Ilya Razdolski,
Alexander L. Chekhov,
Alexander I. Stognij,
Andrzej Stupakiewicz
Abstract:
We analyze ultrafast electron dynamics in the time domain upon optical excitation of propagating surface plasmon-polaritons (SPs) in metal-dielectric heterostructures. Develo** a kinetic model where both local and non-local electron relaxation in metals are included, we identify relevant timescales and extend the existing non-equilibrium electron dynamics framework onto the case of collective el…
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We analyze ultrafast electron dynamics in the time domain upon optical excitation of propagating surface plasmon-polaritons (SPs) in metal-dielectric heterostructures. Develo** a kinetic model where both local and non-local electron relaxation in metals are included, we identify relevant timescales and extend the existing non-equilibrium electron dynamics framework onto the case of collective electronic excitations. The experimental data obtained in two distinct series of pump-probe measurements (with varied pump wavelength and angle of incidence) demonstrate SP-driven, one order of magnitude enhanced efficiency of the hot electron generation and the fourfold (up to 200 fs) slowdown of their non-local relaxation at the SP resonance. We discuss the perspectives of the SP-enabled manipulation of the non-equilibrium electron population lying at the crossover of photonics and ultrafast spintronics.
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Submitted 25 January, 2019;
originally announced January 2019.
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Surface plasmon-mediated nanoscale localization of laser-driven sub-THz spin dynamics in magnetic dielectrics
Authors:
Alexander L. Chekhov,
Alexander I. Stognij,
Takuya Satoh,
Tatiana V. Murzina,
Ilya Razdolski,
Andrzej Stupakiewicz
Abstract:
Ultrafast all-optical control of spins with femtosecond laser pulses is one of the hot topics at the crossroads of photonics and magnetism with a direct impact on future magnetic recording. Unveiling light-assisted recording mechanisms for an increase of the bit density beyond the diffraction limit without excessive heating of the recording medium is an open challenge. Here we show that surface pl…
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Ultrafast all-optical control of spins with femtosecond laser pulses is one of the hot topics at the crossroads of photonics and magnetism with a direct impact on future magnetic recording. Unveiling light-assisted recording mechanisms for an increase of the bit density beyond the diffraction limit without excessive heating of the recording medium is an open challenge. Here we show that surface plasmon-polaritons in hybrid metal-dielectric structures can provide spatial confinement of the inverse Faraday effect, mediating the excitation of localized coherent spin precession with 0.41 THz frequency. We demonstrate a two orders of magnitude enhancement of the excitation efficiency at the surface plasmon resonance within the 100 nm layer in dielectric garnet. Our findings broaden the horizons of ultrafast spin-plasmonics and open pathways towards non-thermal opto-magnetic recording at the nano-scale.
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Submitted 5 December, 2017;
originally announced December 2017.
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Magnetic properties, spin waves and interaction between spin excitations and 2D electrons in interface layer in Y3Fe5O12 / AlOx / GaAs-heterostructures
Authors:
L. V. Lutsev,
A. I. Stognij,
N. N. Novitskii,
V. E. Bursian,
A. Maziewski,
R. Gieniusz
Abstract:
We describe synthesis of submicron Y3Fe5O12 (YIG) films sputtered on GaAs-based substrates and present results of the investigation of ferromagnetic resonance (FMR), spin wave propagation and interaction between spin excitations and 2D electrons in interface layer in YIG / AlOx / GaAs-heterostructures. It is found that the contribution of the relaxation process to the FMR linewidth is about 2 % of…
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We describe synthesis of submicron Y3Fe5O12 (YIG) films sputtered on GaAs-based substrates and present results of the investigation of ferromagnetic resonance (FMR), spin wave propagation and interaction between spin excitations and 2D electrons in interface layer in YIG / AlOx / GaAs-heterostructures. It is found that the contribution of the relaxation process to the FMR linewidth is about 2 % of the linewidth ΔH. At the same time, for all samples FMR linewidths are high. Sputtered YIG films have magnetic inhomogeneity, which gives the main contribution to the FMR linewidth. Transistor structures with two-dimensional electron gas (2DEG) channels in AlOx / GaAs interface governed by YIG-film spin excitations are designed. An effective influence of spin excitations on the current flowing through the GaAs 2DEG channel is observed. Light illumination results in essential changes in the FMR spectrum. It is found that an increase of the 2DEG current leads to an inverse effect, which represents essential changes in the FMR spectrum.
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Submitted 27 November, 2017;
originally announced November 2017.
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Magnonic band gaps in YIG based magnonic crystals: array of grooves versus array of metallic stripes
Authors:
V. D. Bessonov,
M. Mruczkiewicz,
R. Gieniusz,
U. Guzowska,
A. Maziewski,
A. I. Stognij,
M. Krawczyk
Abstract:
The magnonic band gaps of the two types of planar one-dimensional magnonic crystals comprised of the periodic array of the metallic stripes on yttrium iron garnet (YIG) film and YIG film with an array of grooves was analyzed experimentally and theoretically. In such periodic magnetic structures the propagating magnetostatic surface spin waves were excited and detected by microstripe transducers wi…
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The magnonic band gaps of the two types of planar one-dimensional magnonic crystals comprised of the periodic array of the metallic stripes on yttrium iron garnet (YIG) film and YIG film with an array of grooves was analyzed experimentally and theoretically. In such periodic magnetic structures the propagating magnetostatic surface spin waves were excited and detected by microstripe transducers with vector network analyzer and by Brillouin light scattering spectroscopy. Properties of the magnonic band gaps were explained with the help of the finite element calculations. The important influence of the nonreciprocal properties of the spin wave dispersion induced by metallic stripes on the magnonic band gap width and its dependence on the external magnetic field has been shown. The usefulness of both types of the magnonic crystals for potential applications and possibility for miniaturization are discussed.
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Submitted 12 December, 2014; v1 submitted 7 December, 2014;
originally announced December 2014.
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Amplification of the photocurrent in SiO2(Co)/GaAs heterostructure induced by magnetic field in the avalanche regime
Authors:
V. V. Pavlov,
L. V. Lutsev,
P. A. Usachev,
A. A. Astretsov,
A. I. Stognij,
N. N. Novitskii,
R. V. Pisarev
Abstract:
Amplification of the photocurrent in heterostructures of silicon dioxide films containing cobalt nanoparticles grown on gallium arsenide SiO2(Co)/GaAs has been observed in magnetic field in the avalanche regime. While the avalanche process is suppressed by the magnetic field and the current decreases, for photon energy E greater than the GaAs bandgap energy the photocurrent significantly increases…
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Amplification of the photocurrent in heterostructures of silicon dioxide films containing cobalt nanoparticles grown on gallium arsenide SiO2(Co)/GaAs has been observed in magnetic field in the avalanche regime. While the avalanche process is suppressed by the magnetic field and the current decreases, for photon energy E greater than the GaAs bandgap energy the photocurrent significantly increases. The amplification reaches 9.5 for E = 1.50 eV. The effect of the photocurrent amplification is explained by the spin-dependent recombination process at deep impurity centers in GaAs.
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Submitted 29 December, 2012;
originally announced December 2012.
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Negative photoconductance in SiO2(Co)/GaAs heterostructure in the avalanche regime
Authors:
L. V. Lutsev,
V. V. Pavlov,
P. A. Usachev,
A. A. Astretsov,
A. I. Stognij,
N. N. Novitskii
Abstract:
In the avalanche regime we observed the negative photoconductance of heterostructures of silicon dioxide films containing cobalt nanoparticles grown on gallium arsenide, SiO2(Co)/GaAs. Light irradiation with the photon energy less than the bandgap energy of the GaAs creates holes trapped on defects within the GaAs bandgap, suppresses the avalanche feedback and causes a reduction of the current flo…
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In the avalanche regime we observed the negative photoconductance of heterostructures of silicon dioxide films containing cobalt nanoparticles grown on gallium arsenide, SiO2(Co)/GaAs. Light irradiation with the photon energy less than the bandgap energy of the GaAs creates holes trapped on defects within the GaAs bandgap, suppresses the avalanche feedback and causes a reduction of the current flowing in the SiO2(Co)/GaAs.
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Submitted 17 September, 2012;
originally announced September 2012.
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Spintronic devices on the base of magnetic nanostructures
Authors:
L. V. Lutsev,
A. I. Stognij,
N. N. Novitskii,
A. S. Shulenkov
Abstract:
Two types of spintronic devices on the base of magnetic nanostructures containing silicon dioxide films with cobalt nanoparticles SiO2(Co) on GaAs substrate - magnetic sensors and field-effect transistor governed by applied magnetic field - are studied. Magnetic sensors are based on the injection magnetoresistance effect. This effect manifests itself in avalanche suppression by the magnetic field…
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Two types of spintronic devices on the base of magnetic nanostructures containing silicon dioxide films with cobalt nanoparticles SiO2(Co) on GaAs substrate - magnetic sensors and field-effect transistor governed by applied magnetic field - are studied. Magnetic sensors are based on the injection magnetoresistance effect. This effect manifests itself in avalanche suppression by the magnetic field in GaAs near the SiO2(Co)/GaAs interface. Field-effect transistor contains the SiO2(Co) film under gate. It is found that the magnetic field action leads to great changes in electron mobility in the channel due to the interaction between spins of Co nanoparticles and electron spins.
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Submitted 8 December, 2011;
originally announced December 2011.
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Giant magnetoresistance in semiconductor / granular film heterostructures with cobalt nanoparticles
Authors:
L. V. Lutsev,
A. I. Stognij,
N. N. Novitskii
Abstract:
We have studied the electron transport in SiO${}_2$(Co)/GaAs and SiO${}_2$(Co)/Si heterostructures, where the SiO${}_2$(Co) structure is the granular SiO${}_2$ film with Co nanoparticles. In SiO${}_2$(Co)/GaAs heterostructures giant magnetoresistance effect is observed. The effect has positive values, is expressed, when electrons are injected from the granular film into the GaAs semiconductor, a…
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We have studied the electron transport in SiO${}_2$(Co)/GaAs and SiO${}_2$(Co)/Si heterostructures, where the SiO${}_2$(Co) structure is the granular SiO${}_2$ film with Co nanoparticles. In SiO${}_2$(Co)/GaAs heterostructures giant magnetoresistance effect is observed. The effect has positive values, is expressed, when electrons are injected from the granular film into the GaAs semiconductor, and has the temperature-peak type character. The temperature location of the effect depends on the Co concentration and can be shifted by the applied electrical field. For the SiO${}_2$(Co)/GaAs heterostructure with 71 at.% Co the magnetoresistance reaches 1000 ($10^5$ %) at room temperature. On the contrary, for SiO${}_2$(Co)/Si heterostructures magnetoresistance values are very small (4%) and for SiO${}_2$(Co) films the magnetoresistance has an opposite value. High values of the magnetoresistance effect in SiO${}_2$(Co)/GaAs heterostructures have been explained by magnetic-field-controlled process of impact ionization in the vicinity of the spin-dependent potential barrier formed in the semiconductor near the interface. Kinetic energy of electrons, which pass through the barrier and trigger the avalanche process, is reduced by the applied magnetic field. This electron energy suppression postpones the onset of the impact ionization to higher electric fields and results in the giant magnetoresistance. The spin-dependent potential barrier is due to the exchange interaction between electrons in the accumulation electron layer in the semiconductor and $d$-electrons of Co.
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Submitted 9 May, 2009;
originally announced May 2009.
