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Perspective: Reproducible Coherence Characterization of Superconducting Quantum Devices
Authors:
Corey Rae H McRae,
Gregory M Stiehl,
Haozhi Wang,
Sheng-Xiang Lin,
Shane A Caldwell,
David P Pappas,
Josh Mutus,
Joshua Combes
Abstract:
As the field of superconducting quantum computing approaches maturity, optimization of single-device performance is proving to be a promising avenue towards large-scale quantum computers. However, this optimization is possible only if performance metrics can be accurately compared among measurements, devices, and laboratories. Currently such comparisons are inaccurate or impossible due to understu…
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As the field of superconducting quantum computing approaches maturity, optimization of single-device performance is proving to be a promising avenue towards large-scale quantum computers. However, this optimization is possible only if performance metrics can be accurately compared among measurements, devices, and laboratories. Currently such comparisons are inaccurate or impossible due to understudied errors from a plethora of sources. In this Perspective, we outline the current state of error analysis for qubits and resonators in superconducting quantum circuits, and discuss what future investigations are required before superconducting quantum device optimization can be realized.
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Submitted 30 August, 2021; v1 submitted 17 June, 2021;
originally announced June 2021.
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Direct Visualization of Trimerized States in 1T'-TaTe$_{2}$
Authors:
Ismail El Baggari,
Nikhil Sivadas,
Gregory M. Stiehl,
Jacob Waelder,
Daniel C. Ralph,
Craig J. Fennie,
Lena F. Kourkoutis
Abstract:
Transition-metal dichalcogenides containing tellurium anions show remarkable charge-lattice modulated structures and prominent interlayer character. Using cryogenic scanning transmission electron microscopy (STEM), we map the atomic-scale structures of the high temperature (HT) and low temperature (LT) modulated phases in 1T'-TaTe$_{2}$. At HT, we directly show in-plane metal distortions which for…
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Transition-metal dichalcogenides containing tellurium anions show remarkable charge-lattice modulated structures and prominent interlayer character. Using cryogenic scanning transmission electron microscopy (STEM), we map the atomic-scale structures of the high temperature (HT) and low temperature (LT) modulated phases in 1T'-TaTe$_{2}$. At HT, we directly show in-plane metal distortions which form trimerized clusters and staggered, three-layer stacking. In the LT phase at 93 K, we visualize an additional trimerization of Ta sites and subtle distortions of Te sites by extracting structural information from contrast modulations in plan-view STEM data. Coupled with density functional theory calculations and image simulations, this approach opens the door for atomic-scale visualizations of low temperature phase transitions and complex displacements in a variety of layered systems.
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Submitted 9 September, 2020;
originally announced September 2020.
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Strong, Temperature-Dependent Spin-Orbit Torques in Heavy Fermion YbAl$_3$
Authors:
Neal D Reynolds,
Shouvik Chatterjee,
Gregory M. Stiehl,
Joseph A. Mittelstaedt,
Saba Karimeddiny,
Alexander J. Buser,
Darrell G. Schlom,
Kyle M. Shen,
Daniel C. Ralph
Abstract:
The use of current-generated spin-orbit torques[1] to drive magnetization dynamics is under investigation to enable a new generation of non-volatile, low-power magnetic memory. Previous research has focused on spin-orbit torques generated by heavy metals[2-8], interfaces with strong Rashba interactions[9,10] and topological insulators [11-14]. These families of materials can all be well-described…
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The use of current-generated spin-orbit torques[1] to drive magnetization dynamics is under investigation to enable a new generation of non-volatile, low-power magnetic memory. Previous research has focused on spin-orbit torques generated by heavy metals[2-8], interfaces with strong Rashba interactions[9,10] and topological insulators [11-14]. These families of materials can all be well-described using models with noninteracting-electron bandstructures. Here, we show that electronic interactions within a strongly correlated heavy fermion material, the Kondo lattice system YbAl$_{3}$, can provide a large enhancement in spin-orbit torque. The spin-torque conductivity increases by approximately a factor of 4 as a function of decreasing temperature from room temperature to the coherence temperature of YbAl$_{3}$ ($T^* \approx 37$ K), with a saturation at lower temperatures, achieving a maximum value greater than any heavy metal element. This temperature dependence mimics the increase and saturation at $T^*$ of the density of states at the Fermi level arising from the ytterbium 4$f$-derived heavy bands in the Kondo regime, as measured by angle-resolved photoemission spectroscopy[15]. We therefore identify the many-body Kondo resonance as the source of the large enhancement of spin-orbit torque in YbAl$_{3}$. Our observation reveals new opportunities in spin-orbit torque manipulation of magnetic memories by engineering quantum many-body states.
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Submitted 30 January, 2022; v1 submitted 7 April, 2020;
originally announced April 2020.
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Imaging uncompensated moments and exchange-biased emergent ferromagnetism in FeRh thin films
Authors:
Isaiah Gray,
Gregory M. Stiehl,
John T. Heron,
Antonio B. Mei,
Darrell G. Schlom,
Ramamoorthy Ramesh,
Daniel C. Ralph,
Gregory D. Fuchs
Abstract:
Uncompensated moments in antiferromagnets are responsible for exchange bias in antiferromagnet/ferromagnet heterostructures; however, they are difficult to directly detect because any signal they contribute is typically overwhelmed by the ferromagnetic layer. We use magneto-thermal microscopy to image uncompensated moments in thin films of FeRh, a room-temperature antiferromagnet that exhibits a 1…
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Uncompensated moments in antiferromagnets are responsible for exchange bias in antiferromagnet/ferromagnet heterostructures; however, they are difficult to directly detect because any signal they contribute is typically overwhelmed by the ferromagnetic layer. We use magneto-thermal microscopy to image uncompensated moments in thin films of FeRh, a room-temperature antiferromagnet that exhibits a 1st-order phase transition to a ferromagnetic state near 100~$^\circ$C. FeRh provides the unique opportunity to study both uncompensated moments in the antiferromagnetic phase and the interaction of uncompensated moments with emergent ferromagnetism within a relatively broad (10-15~$^\circ$C) temperature range near $T_C$. In the AF phase below $T_C$, we image both pinned UMs, which cause local vertical exchange bias, and unpinned UMs, which exhibit an enhanced coercive field that reflects exchange-coupling to the AF bulk. Near $T_C$, where AF and FM order coexist, we find that the emergent FM order is exchange-coupled to the bulk Néel order. This exchange coupling leads to the nucleation of unusual configurations in which different FM domains are pinned parallel, antiparallel, and perpendicular to the applied magnetic field before suddenly collapsing into a state uniformly parallel to the field.
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Submitted 17 June, 2019;
originally announced June 2019.
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Layer-dependent spin-orbit torques generated by the centrosymmetric transition metal dichalcogenide $β$-MoTe$_2$
Authors:
Gregory M. Stiehl,
Ruofan Li,
Vishakha Gupta,
Ismail El Baggari,
Shengwei Jiang,
Hongchao Xie,
Lena F. Kourkoutis,
Kin Fai Mak,
Jie Shan,
Robert A. Buhrman,
Daniel C. Ralph
Abstract:
Single-crystal materials with sufficiently low crystal symmetry and strong spin-orbit interactions can be used to generate novel forms of spin-orbit torques on adjacent ferromagnets, such as the out-of-plane antidam** torque previously observed in WTe$_2$/ferromagnet heterostructures. Here, we present measurements of spin-orbit torques produced by the low-symmetry material $β$-MoTe$_2$, which un…
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Single-crystal materials with sufficiently low crystal symmetry and strong spin-orbit interactions can be used to generate novel forms of spin-orbit torques on adjacent ferromagnets, such as the out-of-plane antidam** torque previously observed in WTe$_2$/ferromagnet heterostructures. Here, we present measurements of spin-orbit torques produced by the low-symmetry material $β$-MoTe$_2$, which unlike WTe$_2$ retains bulk inversion symmetry. We measure spin-orbit torques on $β$-MoTe$_2$/Permalloy heterostructures using spin-torque ferromagnetic resonance as a function of crystallographic alignment and MoTe$_2$ thickness down to the monolayer limit. We observe an out-of-plane antidam** torque with a spin torque conductivity as strong as 1/3 of that of WTe$_2$, demonstrating that the breaking of bulk inversion symmetry in the spin-generation material is not a necessary requirement for producing an out-of-plane antidam** torque. We also measure an unexpected dependence on the thickness of the $β$-MoTe$_2$ -- the out-of-plane antidam** torque is present in MoTe$_2$/Permalloy heterostructures when the $β$-MoTe$_2$ is a monolayer or trilayer thick, but goes to zero for devices with bilayer $β$-MoTe$_2$.
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Submitted 3 June, 2019;
originally announced June 2019.
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Current-Induced Torques with Dresselhaus Symmetry Due to Resistance Anisotropy in 2D Materials
Authors:
Gregory M. Stiehl,
David MacNeill,
Nikhil Sivadas,
Ismail El Baggari,
Marcos H. D. Guimaraes,
Neal D. Reynolds,
Lena F. Kourkoutis,
Craig J. Fennie,
Robert A. Buhrman,
Daniel C. Ralph
Abstract:
We report measurements of current-induced torques in heterostructures of Permalloy (Py) with TaTe$_2$, a transition-metal dichalcogenide (TMD) material possessing low crystal symmetry, and observe a torque component with Dresselhaus symmetry. We suggest that the dominant mechanism for this Dresselhaus component is not a spin-orbit torque, but rather the Oersted field arising from a component of cu…
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We report measurements of current-induced torques in heterostructures of Permalloy (Py) with TaTe$_2$, a transition-metal dichalcogenide (TMD) material possessing low crystal symmetry, and observe a torque component with Dresselhaus symmetry. We suggest that the dominant mechanism for this Dresselhaus component is not a spin-orbit torque, but rather the Oersted field arising from a component of current that flows perpendicular to the applied voltage due to resistance anisotropy within the TaTe$_2$. This type of transverse current is not present in wires made from a single uniform layer of a material with resistance anisotropy, but will result whenever a material with resistance anisotropy is integrated into a heterostructure with materials having different resistivities, thereby producing a spatially non-uniform pattern of current flow. This effect will therefore influence measurements in a wide variety of heterostructures incorporating 2D TMD materials and other materials with low crystal symmetries.
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Submitted 25 January, 2019;
originally announced January 2019.
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Spin Seebeck imaging of spin-torque switching in antiferromagnetic Pt/NiO heterostructures
Authors:
Isaiah Gray,
Takahiro Moriyama,
Nikhil Sivadas,
Gregory M. Stiehl,
John T. Heron,
Ryan Need,
Brian J. Kirby,
David H. Low,
Katja C. Nowack,
Darrell G. Schlom,
Daniel C. Ralph,
Teruo Ono,
Gregory D. Fuchs
Abstract:
As electrical control of Néel order opens the door to reliable antiferromagnetic spintronic devices, understanding the microscopic mechanisms of antiferromagnetic switching is crucial. Spatially-resolved studies are necessary to distinguish multiple nonuniform switching mechanisms; however, progress has been hindered by the lack of tabletop techniques to image the Néel order. We demonstrate spin S…
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As electrical control of Néel order opens the door to reliable antiferromagnetic spintronic devices, understanding the microscopic mechanisms of antiferromagnetic switching is crucial. Spatially-resolved studies are necessary to distinguish multiple nonuniform switching mechanisms; however, progress has been hindered by the lack of tabletop techniques to image the Néel order. We demonstrate spin Seebeck microscopy as a sensitive, table-top method for imaging antiferromagnetic order in thin films, and apply this technique to study spin-torque switching in NiO/Pt and Pt/NiO/Pt heterostructures. We establish the interfacial antiferromagnetic spin Seebeck effect in NiO as a probe of surface Néel order, resolving antiferromagnetic spin domains within crystalline twin domains. By imaging before and after applying current-induced spin torque, we resolve spin domain rotation and domain wall motion, acting simultaneously. We correlate the changes in spin Seebeck images with electrical measurements of the average Néel orientation through the spin Hall magnetoresistance, confirming that we image antiferromagnetic order.
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Submitted 1 March, 2019; v1 submitted 9 October, 2018;
originally announced October 2018.
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Spin-orbit torques in NbSe$_2$/Permalloy bilayers
Authors:
Marcos H. D. Guimaraes,
Gregory M. Stiehl,
David MacNeill,
Neal D. Reynolds,
Daniel C. Ralph
Abstract:
We present measurements of current-induced spin-orbit torques generated by NbSe$_2$, a fully-metallic transition-metal dichalcogenide material, made using the spin-torque ferromagnetic resonance (ST-FMR) technique with NbSe$_{2}$/Permalloy bilayers. In addition to the out-of-plane Oersted torque expected from current flow in the metallic NbSe$_{2}$ layer, we also observe an in-plane antidam** to…
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We present measurements of current-induced spin-orbit torques generated by NbSe$_2$, a fully-metallic transition-metal dichalcogenide material, made using the spin-torque ferromagnetic resonance (ST-FMR) technique with NbSe$_{2}$/Permalloy bilayers. In addition to the out-of-plane Oersted torque expected from current flow in the metallic NbSe$_{2}$ layer, we also observe an in-plane antidam** torque with torque conductivity $σ_{S} \approx 10^{3} (\hbar / 2e)$($Ω$m)$^{-1}$ and indications of a weak field-like contribution to the out-of-plane torque oriented opposite to the Oersted torque. Furthermore, in some samples we also measure an in-plane field-like torque with the form $\hat{m} \times \hat{z}$, where $\hat{m}$ is the Permalloy magnetization direction and $\hat{z}$ is perpendicular to the sample plane. The size of this component varies strongly between samples and is not correlated with the NbSe$_{2}$ thickness. A torque of this form is not allowed by the bulk symmetries of NbSe$_{2}$, but is consistent with symmetry breaking by a uniaxial strain that might result during device fabrication.
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Submitted 22 January, 2018;
originally announced January 2018.
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Thickness dependence of spin-orbit torques generated by WTe2
Authors:
David MacNeill,
Gregory M. Stiehl,
Marcos H. D. Guimaraes,
Neal D. Reynolds,
Robert A. Buhrman,
Daniel C. Ralph
Abstract:
We study current-induced torques in WTe2/permalloy bilayers as a function of WTe2 thickness. We measure the torques using both second-harmonic Hall and spin-torque ferromagnetic resonance measurements for samples with WTe2 thicknesses that span from 16 nm down to a single monolayer. We confirm the existence of an out-of-plane antidam** torque, and show directly that the sign of this torque compo…
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We study current-induced torques in WTe2/permalloy bilayers as a function of WTe2 thickness. We measure the torques using both second-harmonic Hall and spin-torque ferromagnetic resonance measurements for samples with WTe2 thicknesses that span from 16 nm down to a single monolayer. We confirm the existence of an out-of-plane antidam** torque, and show directly that the sign of this torque component is reversed across a monolayer step in the WTe2. The magnitude of the out-of-plane antidam** torque depends only weakly on WTe2 thickness, such that even a single-monolayer WTe2 device provides a strong torque that is comparable to much thicker samples. In contrast, the out-of-plane field-like torque has a significant dependence on the WTe2 thickness. We demonstrate that this field-like component originates predominantly from the Oersted field, thereby correcting a previous inference drawn by our group based on a more limited set of samples.
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Submitted 12 July, 2017;
originally announced July 2017.
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Control of spin-orbit torques through crystal symmetry in WTe2/ferromagnet bilayers
Authors:
D. MacNeill,
G. M. Stiehl,
M. H. D. Guimaraes,
R. A. Buhrman,
J. Park,
D. C. Ralph
Abstract:
Recent discoveries regarding current-induced spin-orbit torques produced by heavy-metal/ferromagnet and topological-insulator/ferromagnet bilayers provide the potential for dramatically-improved efficiency in the manipulation of magnetic devices. However, in experiments performed to date, spin-orbit torques have an important limitation -- the component of torque that can compensate magnetic dampin…
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Recent discoveries regarding current-induced spin-orbit torques produced by heavy-metal/ferromagnet and topological-insulator/ferromagnet bilayers provide the potential for dramatically-improved efficiency in the manipulation of magnetic devices. However, in experiments performed to date, spin-orbit torques have an important limitation -- the component of torque that can compensate magnetic dam** is required by symmetry to lie within the device plane. This means that spin-orbit torques can drive the most current-efficient type of magnetic reversal (antidam** switching) only for magnetic devices with in-plane anisotropy, not the devices with perpendicular magnetic anisotropy that are needed for high-density applications. Here we show experimentally that this state of affairs is not fundamental, but rather one can change the allowed symmetries of spin-orbit torques in spin-source/ferromagnet bilayer devices by using a spin source material with low crystalline symmetry. We use WTe2, a transition-metal dichalcogenide whose surface crystal structure has only one mirror plane and no two-fold rotational invariance. Consistent with these symmetries, we generate an out-of-plane antidam** torque when current is applied along a low-symmetry axis of WTe2/Permalloy bilayers, but not when current is applied along a high-symmetry axis. Controlling S-O torques by crystal symmetries in multilayer samples provides a new strategy for optimizing future magnetic technologies.
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Submitted 9 May, 2016;
originally announced May 2016.
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Thickness-Dependent Magnetoelasticity and its Effects on Perpendicular Magnetic Anisotropy in Ta|CoFeB|MgO Thin Films
Authors:
Praveen G. Gowtham,
Gregory M. Stiehl,
Daniel C. Ralph,
Robert A. Buhrman
Abstract:
We report measurements of the in-plane magnetoelastic coupling in ultra-thin Ta|CoFeB|MgO layers as a function of uniaxial strain, conducted using a four-point bending apparatus. For annealed samples, we observe a strong dependence on the thickness of the CoFeB layer in the range 1.3-2.0 nm, which can be modeled as arising from a combination of effective surface and volume contributions to the mag…
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We report measurements of the in-plane magnetoelastic coupling in ultra-thin Ta|CoFeB|MgO layers as a function of uniaxial strain, conducted using a four-point bending apparatus. For annealed samples, we observe a strong dependence on the thickness of the CoFeB layer in the range 1.3-2.0 nm, which can be modeled as arising from a combination of effective surface and volume contributions to the magnetoelastic coupling. We point out that if similar thickness dependence exists for magnetoelastic coupling in response to biaxial strain, then the standard Néel model for the magnetic anisotropy energy acquires a term inversely proportional to the magnetic layer thickness. This contribution can significantly change the overall magnetic anisotropy, and provides a natural explanation for the strongly nonlinear dependence of magnetic anisotropy energy on magnetic layer thickness that is commonly observed for ultrathin annealed CoFeB|MgO films with perpendicular magnetic anisotropy.
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Submitted 14 September, 2015;
originally announced September 2015.
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Magnetic Structure and Ordering of Multiferroic Hexagonal LuFeO3
Authors:
Steven M. Disseler,
Julie A. Borchers,
Charles M. Brooks,
Julia A. Mundy,
Jarrett A. Moyer,
D. A. Hillsberry,
E. L. Thies,
D. A. Tenne,
John Heron,
James D. Clarkson,
Gregory M. Stiehl,
Peter Schiffer,
David A. Muller,
Darrell G. Schlom,
William D. Ratcliff
Abstract:
We report on the magnetic structure and ordering of hexagonal LuFeO3 films grown by molecular-beam epitaxy (MBE) on YSZ (111) and Al2O3 (0001) substrates. Using a set of complementary probes including neutron diffraction, we find that the system magnetically orders into a ferromagnetically-canted antiferromagnetic state via a single transition between 138-155 K, while a paraelectric to ferroelectr…
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We report on the magnetic structure and ordering of hexagonal LuFeO3 films grown by molecular-beam epitaxy (MBE) on YSZ (111) and Al2O3 (0001) substrates. Using a set of complementary probes including neutron diffraction, we find that the system magnetically orders into a ferromagnetically-canted antiferromagnetic state via a single transition between 138-155 K, while a paraelectric to ferroelectric transition occurs above 1000 K. The symmetry of the magnetic structure in the ferroelectric state implies that this material is a strong candidate for linear magnetoelectric coupling and control of the ferromagnetic moment directly by an electric field.
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Submitted 6 November, 2014;
originally announced November 2014.
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Code-division multiplexing for x-ray microcalorimeters
Authors:
G. M. Stiehl,
W. B. Doriese,
J. W. Fowler,
G. C. Hilton,
K. D. Irwin,
C. D. Reintsema,
D. R. Schmidt,
D. S. Swetz,
J. N. Ullom,
L. R. Vale.
Abstract:
We demonstrate the code-division multiplexed (CDM) readout of eight transition-edge sensor microcalorimeters. The energy resolution is 3.0 eV (full width at half-maximum) or better at 5.9 keV, with a best resolution of 2.3 eV and a mean of 2.6 eV over the seven modulated detectors. The flux-summing CDM system is described and compared with similar time-division multiplexed (TDM) readout. We show t…
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We demonstrate the code-division multiplexed (CDM) readout of eight transition-edge sensor microcalorimeters. The energy resolution is 3.0 eV (full width at half-maximum) or better at 5.9 keV, with a best resolution of 2.3 eV and a mean of 2.6 eV over the seven modulated detectors. The flux-summing CDM system is described and compared with similar time-division multiplexed (TDM) readout. We show that the sqrt(Npixels) multiplexing disadvantage associated with TDM is not present in CDM. This demonstration establishes CDM as both a simple route to higher performance in existing TDM microcalorimetric experiments and a long-term approach to reaching higher multiplexing factors.
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Submitted 30 January, 2012;
originally announced January 2012.
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Optimization and analysis of code-division multiplexed TES microcalorimeters
Authors:
J. W. Fowler,
W. B. Doriese,
G. C. Hilton,
K. D. Irwin,
D. R. Schmidt,
G. M. Stiehl,
D. S. Swetz,
J. N. Ullom,
L. R. Vale.
Abstract:
We are develo** code-division multiplexing (CDM) systems for transition-edge sensor arrays with the goal of reaching multiplexing factors in the hundreds. We report on x-ray measurements made with a four-channel prototype CDM system that employs a flux-summing architecture, emphasizing data-analysis issues. We describe an empirical method to determine the demodulation matrix that minimizes cross…
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We are develo** code-division multiplexing (CDM) systems for transition-edge sensor arrays with the goal of reaching multiplexing factors in the hundreds. We report on x-ray measurements made with a four-channel prototype CDM system that employs a flux-summing architecture, emphasizing data-analysis issues. We describe an empirical method to determine the demodulation matrix that minimizes cross-talk. This CDM system achieves energy resolutions of between 2.3 eV and 3.0 eV FWHM at 5.9 keV.
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Submitted 11 October, 2011;
originally announced October 2011.
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Time-division SQUID multiplexers with reduced sensitivity to external magnetic fields
Authors:
G. M. Stiehl,
H. M. Cho,
G. C. Hilton,
K. D. Irwin,
J. A. B. Mates,
C. D. Reintsema,
B. L. Zink
Abstract:
Time-division SQUID multiplexers are used in many applications that require exquisite control of systematic error. One potential source of systematic error is the pickup of external magnetic fields in the multiplexer. We present measurements of the field sensitivity figure of merit, effective area, for both the first stage and second stage SQUID amplifiers in three NIST SQUID multiplexer designs.…
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Time-division SQUID multiplexers are used in many applications that require exquisite control of systematic error. One potential source of systematic error is the pickup of external magnetic fields in the multiplexer. We present measurements of the field sensitivity figure of merit, effective area, for both the first stage and second stage SQUID amplifiers in three NIST SQUID multiplexer designs. These designs include a new variety with improved gradiometry that significantly reduces the effective area of both the first and second stage SQUID amplifiers.
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Submitted 30 August, 2010;
originally announced August 2010.