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Statistical study and parallelisation of multiplexed single-electron sources
Authors:
S. Norimoto,
P. See,
N. Schoinas,
I. Rungger,
T. O. Boykin II,
M. D. Stewart Jr,
J. P. Griffiths,
C. Chen,
D. A. Ritchie,
M. Kataoka
Abstract:
Increasing electric current from a single-electron source is a main challenge in an effort to establish the standard of the ampere defined by the fixed value of the elementary charge $e$ and operation frequency $f$. While the current scales with $f$, due to an operation frequency limit for maintaining accurate single-electron transfer, parallelisation of singleelectron sources is expected to be a…
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Increasing electric current from a single-electron source is a main challenge in an effort to establish the standard of the ampere defined by the fixed value of the elementary charge $e$ and operation frequency $f$. While the current scales with $f$, due to an operation frequency limit for maintaining accurate single-electron transfer, parallelisation of singleelectron sources is expected to be a more practical solution to increase the generated electric current $I = Nef$, where $N$ is a number of parallelised devices. One way to parallelise single-electron sources without increasing the complexity in device operation is to use a common gate. Such a scheme will require each device to have the same operation parameters for single-electron transfer. In order to investigate this possibility, we study the statistics for operation gate voltages using single-electron sources embedded in a multiplexer circuit. The multiplexer circuit allows us to measure 64 single-electron sources individually in a single cooldown. We also demonstrate the parallelisation of three single-electron sources and observe the generated current enhanced by a factor of three.
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Submitted 8 July, 2024;
originally announced July 2024.
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Atomic-scale Control of Tunnel Coupling
Authors:
Xiqiao Wang,
Jonathan Wyrick,
Ranjit V. Kashid,
Pradeep Namboodiri,
Scott W. Schmucker,
Andrew Murphy,
M. D. Stewart, Jr.,
Neil Zimmerman,
Richard M. Silver
Abstract:
Atomically precise donor-based quantum devices are a promising candidate for scalable solid-state quantum computing. Atomically precise design and implementation of the tunnel coupling in these devices is essential to realize gate-tunable exchange coupling, and electron spin initialization and readout. Current efforts in atomically precise lithography have enabled deterministic placement of single…
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Atomically precise donor-based quantum devices are a promising candidate for scalable solid-state quantum computing. Atomically precise design and implementation of the tunnel coupling in these devices is essential to realize gate-tunable exchange coupling, and electron spin initialization and readout. Current efforts in atomically precise lithography have enabled deterministic placement of single dopant atoms into the Si lattice with sub-nm precision. However, critical challenges in atomically precise fabrication have meant systematic, atomic-scale control of the tunneling coupling has not been demonstrated. Here using a room-temperature grown locking layer and precise control over the entire atomic-scale fabrication process, we demonstrate atomic-scale control of the tunnel coupling in atomically precise single-electron transistors (SETs). Using the naturally occurring Si (100) 2x1 surface reconstruction lattice as an atomically-precise ruler, we systematically vary the number of lattice counts within the tunnel junction gaps and demonstrate exponential scaling of the tunneling resistance at the atomic limit. Using low-temperature transport measurements, we characterize the tunnel coupling asymmetry in a pair of nominally identical tunnel gaps that results from atomic-scale variation in the tunnel junction and show a resistance difference of four that corresponds to half a dimer row pitch difference in the effective tunnel gap distances - the intrinsic limit of hydrogen lithography precision on Si (100) 2x1 surfaces. Our results demonstrate the key capability to do atom-scale design and engineering of the tunnel coupling necessary for solid-state quantum computing and analog quantum simulation.
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Submitted 26 July, 2019; v1 submitted 30 April, 2019;
originally announced May 2019.
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Effect of device design on charge offset drift in Si/SiO$_2$ single electron devices
Authors:
Binhui Hu,
Erick D. Ochoa,
Daniel Sanchez,
Justin K. Perron,
Neil M. Zimmerman,
M. D. Stewart Jr
Abstract:
We have measured the low-frequency time instability known as charge offset drift of Si/SiO$_2$ single electron devices (SEDs) with and without an overall poly-Si top gate. We find that SEDs with a poly-Si top gate have significantly less charge offset drift, exhibiting fewer isolated jumps and a factor of two reduction in fluctuations about a stable mean value. The observed reduction can be accoun…
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We have measured the low-frequency time instability known as charge offset drift of Si/SiO$_2$ single electron devices (SEDs) with and without an overall poly-Si top gate. We find that SEDs with a poly-Si top gate have significantly less charge offset drift, exhibiting fewer isolated jumps and a factor of two reduction in fluctuations about a stable mean value. The observed reduction can be accounted for by the electrostatic reduction in the mutual capacitance $C_m$ between defects and the quantum dot, and increase in the total defect capacitance $C_d$ due to the top gate. These results depart from the accepted understanding that the level of charge offset drift in SEDs is determined by the intrinsic material properties, forcing consideration of the device design as well. We expect these results to be of importance in develo** SEDs for applications from quantum information to metrology or wherever charge noise or integrability of devices is a challenge.
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Submitted 11 July, 2018;
originally announced July 2018.
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Machine Learning techniques for state recognition and auto-tuning in quantum dots
Authors:
Sandesh S. Kalantre,
Justyna P. Zwolak,
Stephen Ragole,
Xingyao Wu,
Neil M. Zimmerman,
M. D. Stewart,
Jacob M. Taylor
Abstract:
Recent progress in building large-scale quantum devices for exploring quantum computing and simulation paradigms has relied upon effective tools for achieving and maintaining good experimental parameters, i.e. tuning up devices. In many cases, including in quantum-dot based architectures, the parameter space grows substantially with the number of qubits, and may become a limit to scalability. Fort…
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Recent progress in building large-scale quantum devices for exploring quantum computing and simulation paradigms has relied upon effective tools for achieving and maintaining good experimental parameters, i.e. tuning up devices. In many cases, including in quantum-dot based architectures, the parameter space grows substantially with the number of qubits, and may become a limit to scalability. Fortunately, machine learning techniques for pattern recognition and image classification using so-called deep neural networks have shown surprising successes for computer-aided understanding of complex systems. In this work, we use deep and convolutional neural networks to characterize states and charge configurations of semiconductor quantum dot arrays when one can only measure a current-voltage characteristic of transport (here conductance) through such a device. For simplicity, we model a semiconductor nanowire connected to leads and capacitively coupled to depletion gates using the Thomas-Fermi approximation and Coulomb blockade physics. We then generate labelled training data for the neural networks, and find at least $90\,\%$ accuracy for charge and state identification for single and double dots purely from the dependence of the nanowire's conductance upon gate voltages. Using these characterization networks, we can then optimize the parameter space to achieve a desired configuration of the array, a technique we call `auto-tuning'. Finally, we show how such techniques can be implemented in an experimental setting by applying our approach to an experimental data set, and outline further problems in this domain, from using charge sensing data to extensions to full one and two-dimensional arrays, that can be tackled with machine learning.
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Submitted 15 February, 2018; v1 submitted 13 December, 2017;
originally announced December 2017.
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Quantifying Atom-scale Dopant Movement and Electrical Activation in Si:P Monolayers
Authors:
Xiqiao Wang,
Joseph A. Hagmann,
Pradeep Namboodiri,
Jonathan Wyrick,
Kai Li,
Roy E. Murray,
Alline Myers,
Frederick Misenkosen,
M. D. Stewart, Jr.,
Curt A. Richter,
Richard M. Silver
Abstract:
Advanced hydrogen lithography techniques and low-temperature epitaxial overgrowth enable patterning of highly phosphorus-doped silicon (Si:P) monolayers (ML) with atomic precision. This approach to device fabrication has made Si:P monolayer systems a testbed for multiqubit quantum computing architectures and atomically precise 2-D superlattice designs whose behaviors are directly tied to the deter…
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Advanced hydrogen lithography techniques and low-temperature epitaxial overgrowth enable patterning of highly phosphorus-doped silicon (Si:P) monolayers (ML) with atomic precision. This approach to device fabrication has made Si:P monolayer systems a testbed for multiqubit quantum computing architectures and atomically precise 2-D superlattice designs whose behaviors are directly tied to the deterministic placement of single dopants. However, dopant segregation, diffusion, surface roughening, and defect formation during the encapsulation overgrowth introduce large uncertainties to the exact dopant placement and activation ratio. In this study, we develop a unique method by combining dopant segregation/diffusion models with sputter profiling simulation to monitor and control, at the atomic scale, dopant movement using room-temperature grown locking layers (LL). We explore the impact of LL growth rate, thickness, rapid thermal anneal, surface accumulation, and growth front roughness on dopant confinement, local crystalline quality, and electrical activation within Si:P 2-D systems. We demonstrate that dopant movement can be more efficiently suppressed by increasing the LL growth rate than by increasing LL thickness. We find that the dopant segregation length can be suppressed below a single Si lattice constant by increasing LL growth rates at room temperature while maintaining epitaxy. Although dopant diffusivity within the LL is found to remain high even below the hydrogen desorption temperature, we demonstrate that exceptionally sharp dopant confinement with high electrical quality within Si:P monolayers can be achieved by combining a high LL growth rate with a low-temperature LL rapid thermal anneal.
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Submitted 9 November, 2017;
originally announced November 2017.
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Valley blockade in a silicon double quantum dot
Authors:
Justin K. Perron,
Michael J. Gullans,
Jacob M. Taylor,
M. D. Stewart, Jr.,
Neil M. Zimmerman
Abstract:
Electrical transport in double quantum dots (DQDs) illuminates many interesting features of the dots' carrier states. Recent advances in silicon quantum information technologies have renewed interest in the valley states of electrons confined in silicon. Here we show measurements of DC transport through a mesa-etched silicon double quantum dot. Comparing bias triangles (i.e., regions of allowed cu…
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Electrical transport in double quantum dots (DQDs) illuminates many interesting features of the dots' carrier states. Recent advances in silicon quantum information technologies have renewed interest in the valley states of electrons confined in silicon. Here we show measurements of DC transport through a mesa-etched silicon double quantum dot. Comparing bias triangles (i.e., regions of allowed current in DQDs) at positive and negative bias voltages we find a systematic asymmetry in the size of the bias triangles at the two bias polarities. Asymmetries of this nature are associated with blocking of tunneling events due to the occupation of a metastable state. Several features of our data lead us to conclude that the states involved are not simple spin states. Rather, we develop a model based on selective filling of valley states in the DQD that is consistent with all of the qualitative features of our data.
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Submitted 8 November, 2017; v1 submitted 20 July, 2016;
originally announced July 2016.
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A new Regime of Pauli-Spin Blockade
Authors:
Justin K. Perron,
M. D. Stewart Jr.,
Neil M. Zimmerman
Abstract:
Pauli-spin blockade (PSB) is a transport phenomenon in double quantum dots that allows for a type of spin to charge conversion often used to probe fundamental physics such as spin relaxation and singlet-triplet coupling. In this paper we theoretically explore Pauli-spin blockade as a function of magnetic field B applied parallel to the substrate. In the well-studied low magnetic field regime, wher…
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Pauli-spin blockade (PSB) is a transport phenomenon in double quantum dots that allows for a type of spin to charge conversion often used to probe fundamental physics such as spin relaxation and singlet-triplet coupling. In this paper we theoretically explore Pauli-spin blockade as a function of magnetic field B applied parallel to the substrate. In the well-studied low magnetic field regime, where PSB occurs in the forward $(1,1)\rightarrow(0,2)$ tunneling direction, we highlight some aspects of PSB that are not discussed in detail in existing literature, including the change in size of both bias triangles measured in the forward and reverse biasing directions as a function of B. At higher fields we predict a crossover to \reverse PSB" in which current is blockaded in the reverse direction due to the occupation of a spin singlet as opposed to the traditional triplet blockade that occurs at low fields. The onset of reverse PSB coincides with the development of a tail like feature in the measured bias triangles and occurs when the Zeeman energy of the polarized triplet equals the exchange energy in the (0,2) charge configuration. In Si quantum dots these fields are experimentally accessible; thus, this work suggests a way to probe singlet to triplet relaxation mechanisms in quantum dots when both electrons occupy the same quantum dot.
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Submitted 27 July, 2015;
originally announced July 2015.
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A quantitative study of bias triangles presented in chemical potential space
Authors:
Justin K. Perron,
M. D. Stewart Jr.,
Neil M. Zimmerman
Abstract:
We present measurements of bias triangles in several biasing configurations. Thorough analysis of the data allows us to present data from all four possible bias configurations on a single plot in chemical potential space. This presentation allows comparison between different biasing directions to be made in a clean and straightforward manner. Our analysis and presentation will prove useful in demo…
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We present measurements of bias triangles in several biasing configurations. Thorough analysis of the data allows us to present data from all four possible bias configurations on a single plot in chemical potential space. This presentation allows comparison between different biasing directions to be made in a clean and straightforward manner. Our analysis and presentation will prove useful in demonstrations of Pauli-spin blockade where comparisons between different biasing directions are paramount. The long term stability of the CMOS compatible Si/SiO2 only architecture leads to the success of this analysis. We also propose a simple variation to this analysis that will extend its use to systems lacking the long term stability of these devices.
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Submitted 14 January, 2015;
originally announced January 2015.
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Fabrication and Electrical Characterization of Fully CMOS Si Single Electron Devices
Authors:
P. J. Koppinen,
M. D. Stewart, Jr.,
Neil M. Zimmerman
Abstract:
We present electrical data of silicon single electron devices fabricated with CMOS techniques and protocols. The easily tuned devices show clean Coulomb diamonds at T = 30 mK and charge offset drift of 0.01 e over eight days. In addition, the devices exhibit robust transistor characteristics including uniformity within about 0.5 V in the threshold voltage, gate resistances greater than 10 GΩ, and…
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We present electrical data of silicon single electron devices fabricated with CMOS techniques and protocols. The easily tuned devices show clean Coulomb diamonds at T = 30 mK and charge offset drift of 0.01 e over eight days. In addition, the devices exhibit robust transistor characteristics including uniformity within about 0.5 V in the threshold voltage, gate resistances greater than 10 GΩ, and immunity to dielectric breakdown in electric fields as high as 4 MV/cm. These results highlight the benefits in device performance of a fully CMOS process for single electron device fabrication.
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Submitted 13 June, 2012;
originally announced June 2012.
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Cooper pair insulator in amorphous films induced by nanometer-scale thickness variations
Authors:
S. M. Hollen,
H. Q. Nguyen,
E. Rudisaile,
M. D. Stewart Jr.,
J. Shainline,
J. M. Xu,
J. M. Valles Jr
Abstract:
Unusual transport properties of superconducting (SC) materials, such as the under doped cuprates, low dimensional superconductors in strong magnetic fields, and insulating films near the Insulator Superconductor Transition (IST), have been attributed to the formation of inhomogeneous phases. Difficulty correlating the behaviors with observations of the inhomogeneities make these connections uncert…
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Unusual transport properties of superconducting (SC) materials, such as the under doped cuprates, low dimensional superconductors in strong magnetic fields, and insulating films near the Insulator Superconductor Transition (IST), have been attributed to the formation of inhomogeneous phases. Difficulty correlating the behaviors with observations of the inhomogeneities make these connections uncertain. Of primary interest here are proposals that insulating films near the IST, which show an activated resistance and giant positive magnetoresistance, contain islands of Cooper Pairs (CPs). Here we present evidence that these types of inhomogeneities are essential to such an insulating phase in amorphous Bi (a-Bi) films deposited on substrates patterned with nanometer-sized holes. The patterning induces film thickness variations, and corresponding coupling constant variations, that transform the composition of the insulator from localized electrons to CPs. Analyses near the thickness-tuned ISTs of films on nine different substrates show that weak links between SC islands dominate the transport. In particular, the ISTs all occur when the link resistance approaches the resistance quantum for pairs. These observations lead to a detailed picture of CPs localized by spatial variations of the superconducting coupling constant.
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Submitted 28 January, 2011;
originally announced January 2011.
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Field Evolution of Coexisting Superconducting and Magnetic Orders in CeCoIn$_5$
Authors:
G. Koutroulakis,
M. D. Stewart, Jr.,
V. F. Mitrović,
M. Horvatić,
C. Berthier,
G. Lapertot,
J. Flouquet
Abstract:
We present nuclear magnetic resonance (NMR) measurements on the three distinct In sites of CeCoIn$_5$ with magnetic field applied in the [100] direction. We identify the microscopic nature of the long range magnetic order (LRO) stabilized at low temperatures in fields above 10.2 T while still in the superconducting (SC) state. We infer that the ordered moment is oriented along the $\hat c$-axis…
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We present nuclear magnetic resonance (NMR) measurements on the three distinct In sites of CeCoIn$_5$ with magnetic field applied in the [100] direction. We identify the microscopic nature of the long range magnetic order (LRO) stabilized at low temperatures in fields above 10.2 T while still in the superconducting (SC) state. We infer that the ordered moment is oriented along the $\hat c$-axis and map its field evolution. The study of the field dependence of the NMR shift for the different In sites indicates that the LRO likely coexists with a modulated SC phase, possibly that predicted by Fulde, Ferrell, Larkin, and Ovchinnikov. Furthermore, we discern a field region dominated by strong spin fluctuations where static LRO is absent and propose a revised phase diagram.
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Submitted 17 December, 2009;
originally announced December 2009.
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Observation of Giant Positive Magnetoresistance in a Cooper Pair Insulator
Authors:
H. Q. Nguyen,
S. M. Hollen,
M. D. Stewart Jr.,
J. Shainline,
Aijun Yin,
J. M. Xu,
J. M. Valles Jr
Abstract:
Ultrathin amorphous Bi films, patterned with a nano-honeycomb array of holes, can exhibit an insulating phase with transport dominated by the incoherent motion of Cooper pairs of electrons between localized states. Here we show that the magnetoresistance of this Cooper pair insulator phase is positive and grows exponentially with decreasing temperature, for temperatures well below the pair forma…
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Ultrathin amorphous Bi films, patterned with a nano-honeycomb array of holes, can exhibit an insulating phase with transport dominated by the incoherent motion of Cooper pairs of electrons between localized states. Here we show that the magnetoresistance of this Cooper pair insulator phase is positive and grows exponentially with decreasing temperature, for temperatures well below the pair formation temperature. It peaks at a field estimated to be sufficient to break the pairs and then decreases monotonically into a regime in which the film resistance assumes the temperature dependence appropriate for weakly localized single electron transport. We discuss how these results support proposals that the large MR peaks in other unpatterned, ultrathin film systems disclose a Cooper Pair Insulator phase and provide new insight into the Cooper pair localization.
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Submitted 1 October, 2009; v1 submitted 23 July, 2009;
originally announced July 2009.
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Field Tuned Superconductor to Insulator Transitions in an Amorphous Film with an Imposed Multiply Connected Geometry
Authors:
M. D. Stewart Jr,
Aijun Yin,
J. M. Xu,
J. M. Valles Jr
Abstract:
We have observed multiple magnetic field driven superconductor to insulator transitions (SIT) in amorphous Bi films perforated with a nano-honeycomb (NHC) array of holes. The period of the magneto-resistance, H=H_M=h/2eS where S is the area of a unit cell of holes, indicates the field driven transitions are boson dominated. The field-dependent resistance follows R(T)=R_0(H)exp(T_0(H)/T) on both…
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We have observed multiple magnetic field driven superconductor to insulator transitions (SIT) in amorphous Bi films perforated with a nano-honeycomb (NHC) array of holes. The period of the magneto-resistance, H=H_M=h/2eS where S is the area of a unit cell of holes, indicates the field driven transitions are boson dominated. The field-dependent resistance follows R(T)=R_0(H)exp(T_0(H)/T) on both sides of the transition so that the evolution between these states is controlled by the vanishing of T_0 to0. We compare our results to the thickness driven transition in NHC films and the field driven transitions in unpatterned Bi films, other materials, and Josephson junction arrays. Our results suggest a structural source for similar behavior found in some materials and that despite the clear bosonic nature of the SITs, quasiparticle degrees of freedom likely also play an important part in the evolution of the SIT.
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Submitted 6 December, 2007;
originally announced December 2007.
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"Super weakly" coupled superconductivity in ultrathin superconductor-normal-metal bilayers
Authors:
Zhenyi Long,
M. D. Stewart Jr,
James M. Valles Jr
Abstract:
Tunneling measurements of the temperature dependence of the electronic density of states (DOS) of ultrathin bilayers of Pb and Ag reveal that their superconducting energy gap, $Δ(T)$, evolves similarly to BCS predictions despite the presence of a large anomalous DOS at the Fermi energy that persists as $T\to 0$. The gap ratio, ${2Δ(0)}\over {k_BT_c}$, systematically decreases more than 20% below…
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Tunneling measurements of the temperature dependence of the electronic density of states (DOS) of ultrathin bilayers of Pb and Ag reveal that their superconducting energy gap, $Δ(T)$, evolves similarly to BCS predictions despite the presence of a large anomalous DOS at the Fermi energy that persists as $T\to 0$. The gap ratio, ${2Δ(0)}\over {k_BT_c}$, systematically decreases more than 20% below the BCS universal value of 3.52 in bilayers with the lowest superconducting transition temperatures, $T_c$; a behavior we deem super weakly coupled. A semi-quantitative model suggests that the reduced gap ratios result from a systematic depletion of the DOS available for pairing that occurs with the growth of the anomalous DOS at the Fermi energy.
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Submitted 29 March, 2006; v1 submitted 1 September, 2005;
originally announced September 2005.
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Ordered Nano-Crystal Arrays Spontaneously Form in Films Evaporated onto Nanopore Array Substrates
Authors:
Niravun Pavenayotin,
M. D. Stewart Jr.,
James M. Valles Jr.,
Aijun Yin,
J. M. Xu
Abstract:
We present SEM images of films thermally evaporated onto Anodic Aluminum Oxide substrates that are patterned with a hexagonal array of 34 and 80 nm diameter holes spaced by 100 nm. Over a range of film thicknesses, Pb and Sn films spontaneously self assemble into an array of nano-crystals in registry with the underlying hole lattice. The development of the arrays with thickness indicates that su…
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We present SEM images of films thermally evaporated onto Anodic Aluminum Oxide substrates that are patterned with a hexagonal array of 34 and 80 nm diameter holes spaced by 100 nm. Over a range of film thicknesses, Pb and Sn films spontaneously self assemble into an array of nano-crystals in registry with the underlying hole lattice. The development of the arrays with thickness indicates that surface energies drive coalescing grains to move over the holes. Materials that wet the substrate or whose grains do not coalesce at these substrate temperatures do not form arrays. We discuss some potential applications.
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Submitted 1 June, 2005;
originally announced June 2005.
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Magnetic Flux Periodic Response of Nano-perforated Ultrathin Superconducting Films
Authors:
M. D. Stewart Jr.,
Zhenyi Long,
James M. Valles Jr.,
Aijun Yin,
J. M. Xu
Abstract:
We have patterned a hexagonal array of nano-scale holes into a series of ultrathin, superconducting Bi/Sb films with transition temperatures 2.65 K $<T_{co} < $5 K. These regular perforations give the films a phase-sensitive periodic response to an applied magnetic field. By measuring this response in their resistive transitions, $R(T)$, we are able to distinguish regimes in which fluctuations o…
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We have patterned a hexagonal array of nano-scale holes into a series of ultrathin, superconducting Bi/Sb films with transition temperatures 2.65 K $<T_{co} < $5 K. These regular perforations give the films a phase-sensitive periodic response to an applied magnetic field. By measuring this response in their resistive transitions, $R(T)$, we are able to distinguish regimes in which fluctuations of the amplitude, both the amplitude and phase, and the phase of the superconducting order parameter dominate the transport. The portion of $R(T)$ dominated by amplitude fluctuations is larger in lower $T_{co}$ films and thus, grows with proximity to the superconductor to insulator transition.
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Submitted 17 October, 2005; v1 submitted 1 June, 2005;
originally announced June 2005.
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Observation of a subgap density of states in superconductor-normal metal bilayers in the Cooper limit
Authors:
Zhenyi Long,
M. D. Stewart, Jr.,
Taejoon Kouh,
James M. Valles Jr
Abstract:
We present transport and tunneling measurements of Pb-Ag bilayers with thicknesses, $d_{Pb}$ and $d_{Ag}$, that are much less than the superconducting coherence length. The transition temperature, $T_c$, and energy gap, $Δ$, in the tunneling Density of States (DOS) decrease exponentially with $d_{Ag}$ at fixed $d_{Pb}$. Simultaneously, a DOS that increases linearly from the Fermi energy grows an…
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We present transport and tunneling measurements of Pb-Ag bilayers with thicknesses, $d_{Pb}$ and $d_{Ag}$, that are much less than the superconducting coherence length. The transition temperature, $T_c$, and energy gap, $Δ$, in the tunneling Density of States (DOS) decrease exponentially with $d_{Ag}$ at fixed $d_{Pb}$. Simultaneously, a DOS that increases linearly from the Fermi energy grows and fills nearly 40% of the gap as $T_c$ is 1/10 of $T_c$ of bulk Pb. This behavior suggests that a growing fraction of quasiparticles decouple from the superconductor as $T_c$ goes to 0. The linear dependence is consistent with the quasiparticles becoming trapped on integrable trajectories in the metal layer.
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Submitted 3 September, 2004; v1 submitted 2 September, 2004;
originally announced September 2004.
