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Recyclable Organic Bilayer Piezoresistive Cantilever for Torque Magnetometry at Cryogenic Temperatures
Authors:
Eden Steven,
Danica Krstovska,
Daniel Suarez,
Tasya Berliana,
Eric Jobiliong,
Eun Sang Choi
Abstract:
Flexible sensors made from organic bilayer films of molecular conductor on polymeric matrix have attracted many interest due to their simple fabrication with high potential for being scaled up, and for their high-performing multi-functionality at room temperatures. In particular, the piezoresistive property of the organic bilayer film is among one of the highest ever reported, allowing its utiliza…
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Flexible sensors made from organic bilayer films of molecular conductor on polymeric matrix have attracted many interest due to their simple fabrication with high potential for being scaled up, and for their high-performing multi-functionality at room temperatures. In particular, the piezoresistive property of the organic bilayer film is among one of the highest ever reported, allowing its utilization in various sensing applications. In this work, we present the study of the flexural piezoresistivity of an organic bilayer film based on $β-\rm (BEDT-TTF)_2I_3$ on polycarbonate matrix from room temperatures down to cryogenics temperatures. Non-trivial temperature dependent profile of the gauge factor is revealed, including enhancement of the gauge factor from $\sim 18$ at room temperatures to $\sim 48$ at 4.3 K. An organic bilayer cantilever magnetometer is developed and demonstrated to measure magnetic properties of a single crystalline organic superconductor $κ-\rm (BEDT-TTF)_2Cu(N(CN)_2)Br$ at temperatures down to $\sim 2.75$ K and magnetic fields up to 5 T. The high-performing bilayer devices can be fabricated in a very simple manner, and they are robust and recyclable.
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Submitted 28 July, 2023;
originally announced July 2023.
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Angular dependent magnetothermopower of alpha-(ET)2KHg(SCN)4
Authors:
D. Krstovska,
E. Steven,
E. S. Choi,
J. S. Brooks
Abstract:
The magnetic field and angular dependencies of the thermopower and Nernst effect of the quasi-two-dimensional organic conductor alpha-(ET)2KHg(SCN)4 are experimentally measured at temperatures below (4 K) and above (9 K) the transition temperature to fields of In addition, a theoretical model which involves a magnetic breakdown effect between the q1D and q2D bands is proposed in order to simulate…
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The magnetic field and angular dependencies of the thermopower and Nernst effect of the quasi-two-dimensional organic conductor alpha-(ET)2KHg(SCN)4 are experimentally measured at temperatures below (4 K) and above (9 K) the transition temperature to fields of In addition, a theoretical model which involves a magnetic breakdown effect between the q1D and q2D bands is proposed in order to simulate the data. Analysis of the background components of the thermopower and Nernst effect imply that at low temperatures, in the CDW state, the properties of alpha-(ET)2KHg(SCN)4 are determined mostly by the orbits on the new open Fermi sheets. Quantum oscillations observed in the both thermoelectric effects, at fields above 8 T, originate only from the alpha orbit.
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Submitted 4 July, 2011;
originally announced July 2011.
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Role of anion size, magnetic moment, and disorder on the properties of the organic conductor kappa-(BETS)_2Ga_{1-x}Fe_{x}Cl_{4-y}_Br_{y}
Authors:
E. Steven,
H. B. Cui,
A. Kismarahardja,
J. S. Brooks,
D. Graf,
H. Kobayashi
Abstract:
Shubnikov-de Haas and angular dependent magnetoresistance oscillations have been used to explore the role of anion size, magnetic moment, and disorder in the organic conductors kappa-(BETS)_2GaBr_{4} and kappa-(BETS)_2FeCl_{2}_Br_{2} in the isomorphic class kappa-(BETS)_2Ga_{1-x}Fe_{x}Cl_{4-y}_Br_{y}. The results, combined with previous work, show correlations between the anion composition (Ga_{…
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Shubnikov-de Haas and angular dependent magnetoresistance oscillations have been used to explore the role of anion size, magnetic moment, and disorder in the organic conductors kappa-(BETS)_2GaBr_{4} and kappa-(BETS)_2FeCl_{2}_Br_{2} in the isomorphic class kappa-(BETS)_2Ga_{1-x}Fe_{x}Cl_{4-y}_Br_{y}. The results, combined with previous work, show correlations between the anion composition (Ga_{1-x}Fe_{x}Cl_{4-y}_Br_{y}) and the superconducting transition temperature, effective mass, Fermi surface topology, and the mean free path.
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Submitted 7 September, 2009;
originally announced September 2009.
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Debye relaxation in high magnetic fields
Authors:
J. S. Brooks,
R. Vasic,
A. Kismarahardja,
E. Steven,
T. Tokumoto,
P. Schlottmann,
S. Kelly
Abstract:
Dielectric relaxation is universal in characterizing polar liquids and solids, insulators, and semiconductors, and the theoretical models are well developed. However, in high magnetic fields, previously unknown aspects of dielectric relaxation can be revealed and exploited. Here, we report low temperature dielectric relaxation measurements in lightly doped silicon in high dc magnetic fields B bo…
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Dielectric relaxation is universal in characterizing polar liquids and solids, insulators, and semiconductors, and the theoretical models are well developed. However, in high magnetic fields, previously unknown aspects of dielectric relaxation can be revealed and exploited. Here, we report low temperature dielectric relaxation measurements in lightly doped silicon in high dc magnetic fields B both parallel and perpendicular to the applied ac electric field E. For B//E, we observe a temperature and magnetic field dependent dielectric dispersion e(w)characteristic of conventional Debye relaxation where the free carrier concentration is dependent on thermal dopant ionization, magnetic freeze-out, and/or magnetic localization effects. However, for BperpE, anomalous dispersion emerges in e(w) with increasing magnetic field. It is shown that the Debye formalism can be simply extended by adding the Lorentz force to describe the general response of a dielectric in crossed magnetic and electric fields. Moreover, we predict and observe a new transverse dielectric response EH perp B perp E not previously described in magneto-dielectric measurements. The new formalism allows the determination of the mobility and the ability to discriminate between magnetic localization/freeze out and Lorentz force effects in the magneto-dielectric response.
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Submitted 26 June, 2008;
originally announced June 2008.
