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Soft-Chemical Synthesis, Structure Evolution, and Insulator-to-Metal Transition in a Prototypical Metal Oxide, λ-RhO$_2$
Authors:
Juan R. Chamorro,
Julia L. Zuo,
Euan N. Bassey,
Aurland K. Watkins,
Guomin Zhu,
Arava Zohar,
Kira E. Wyckoff,
Tiffany L. Kinnibrugh,
Saul H. Lapidus,
Susanne Stemmer,
Raphaële J. Clément,
Stephen D. Wilson,
Ram Seshadri
Abstract:
$λ$-RhO$_2$, a prototype 4d transition metal oxide, has been prepared by oxidative delithiation of spinel LiRh$_2$O$_4$ using ceric ammonium nitrate. Average-structure studies of this RhO$_2…
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$λ$-RhO$_2$, a prototype 4d transition metal oxide, has been prepared by oxidative delithiation of spinel LiRh$_2$O$_4$ using ceric ammonium nitrate. Average-structure studies of this RhO$_2$ polytype, including synchrotron powder X-ray diffraction and electron diffraction, indicate the room temperature structure to be tetragonal, in the space group I41/amd, with a first-order structural transition to cubic Fd-3m at T = 345 K on warming. Synchrotron X-ray pair distribution function analysis and $^7$Li solid state nuclear magnetic resonance measurements suggest that the room temperature structure displays local Rh-Rh bonding. The formation of these local dimers appears to be associated with a metal-to insulator transition with a non-magnetic ground state, as also supported by density functional theory-based electronic structure calculations. This contribution demonstrates the power of soft chemistry to kinetically stabilize a surprisingly simple binary oxide compound.
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Submitted 10 October, 2023;
originally announced October 2023.
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Anomalous Hall transport by optically injected isospin degree of freedom in Dirac semimetal thin film
Authors:
Yuta Murotani,
Natsuki Kanda,
Tomohiro Fujimoto,
Takuya Matsuda,
Manik Goyal,
Jun Yoshinobu,
Yohei Kobayashi,
Takashi Oka,
Susanne Stemmer,
Ryusuke Matsunaga
Abstract:
Chirality of massless fermions emergent in condensed matter is a key to understand their characteristic behavior as well as to exploit their functionality. However, chiral nature of massless fermions in Dirac semimetals has remained elusive, due to equivalent occupation of carriers with the opposite chirality in thermal equilibrium. Here, we show that the isospin degree of freedom, which labels th…
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Chirality of massless fermions emergent in condensed matter is a key to understand their characteristic behavior as well as to exploit their functionality. However, chiral nature of massless fermions in Dirac semimetals has remained elusive, due to equivalent occupation of carriers with the opposite chirality in thermal equilibrium. Here, we show that the isospin degree of freedom, which labels the chirality of massless carriers from a crystallographic point of view, can be injected by circularly polarized light. Terahertz Faraday rotation spectroscopy successfully detects the anomalous Hall conductivity by a light-induced isospin polarization in a three-dimensional Dirac semimetal, Cd$_3$As$_2$. Spectral analysis of the Hall conductivity reveals a long scattering time and a long decay time, which are characteristic of the isospin. The long-lived, robust, and reversible character of the isospin promises potential application of Dirac semimetals in future information technology.
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Submitted 4 January, 2024; v1 submitted 2 October, 2023;
originally announced October 2023.
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Engineering the in-plane anomalous Hall effect in Cd$_3$As$_2$ thin films
Authors:
Wangqian Miao,
Binghao Guo,
Susanne Stemmer,
Xi Dai
Abstract:
We predict two topological phase transitions for cadmium arsenide (\ce{Cd3As2}) thin films under in-plane magnetic field, taking advantage of a four-band $k\cdot p$ model and effective $g$ factors calculated from first principles. Film thickness, growth direction and in-plane Zeeman coupling strength can all serve as control parameters to drive these phase transitions. For (001) oriented \ce{Cd3As…
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We predict two topological phase transitions for cadmium arsenide (\ce{Cd3As2}) thin films under in-plane magnetic field, taking advantage of a four-band $k\cdot p$ model and effective $g$ factors calculated from first principles. Film thickness, growth direction and in-plane Zeeman coupling strength can all serve as control parameters to drive these phase transitions. For (001) oriented \ce{Cd3As2} thin films, a two dimensional Weyl semimetal phase protected by $C_{2z}\mathcal{T}$ symmetry can be realized using an in-plane magnetic field, which has recently been reported in our companion paper. We then put forth two pathways to achieve in-plane anomalous Hall effects (IPAHE). By either introducing a trigonal war** term or altering the growth orientation, the emergent $C_{2z} \mathcal{T}$ symmetry can be broken. Consequently, in the clean limit and at low temperatures, quantized Hall plateaus induced by in-plane Zeeman fields become observable.
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Submitted 8 March, 2024; v1 submitted 27 September, 2023;
originally announced September 2023.
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Extraordinary Thermoelectric Properties of Topological Surface States in Quantum-Confined Cd3As2 Thin Films
Authors:
Wenkai Ouyang,
Alexander C. Lygo,
Yubi Chen,
Huiyuan Zheng,
Dung Vu,
Brandi L. Wooten,
Xichen Liang,
Wang Yao,
Joseph P. Heremans,
Susanne Stemmer,
Bolin Liao
Abstract:
Topological insulators and semimetals have been shown to possess intriguing thermoelectric properties promising for energy harvesting and cooling applications. However, thermoelectric transport associated with the Fermi arc topological surface states on topological Dirac semimetals remains less explored. In this work, we systematically examine thermoelectric transport in a series of topological Di…
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Topological insulators and semimetals have been shown to possess intriguing thermoelectric properties promising for energy harvesting and cooling applications. However, thermoelectric transport associated with the Fermi arc topological surface states on topological Dirac semimetals remains less explored. In this work, we systematically examine thermoelectric transport in a series of topological Dirac semimetal Cd3As2 thin films grown by molecular beam epitaxy. Surprisingly, we find significantly enhanced Seebeck effect and anomalous Nernst effect at cryogenic temperatures when the Cd3As2 layer is thin. Combining angle-dependent quantum oscillation analysis, magnetothermoelectric measurement, transport modelling and first-principles simulation, we isolate the contributions from bulk and surface conducting channels and attribute the unusual thermoeletric properties to the topological surface states. Our analysis showcases the rich thermoelectric transport physics in quantum-confined topological Dirac semimetal thin films and suggests new routes to achieving high thermoelectric performance at cryogenic temperatures.
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Submitted 31 August, 2023;
originally announced August 2023.
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Zeeman field-induced two-dimensional Weyl semimetal phase in cadmium arsenide
Authors:
Binghao Guo,
Wangqian Miao,
Victor Huang,
Alexander C. Lygo,
Xi Dai,
Susanne Stemmer
Abstract:
We report a topological phase transition in quantum-confined cadmium arsenide (Cd3As2) thin films under an in-plane Zeeman field when the Fermi level is tuned into the topological gap via an electric field. Symmetry considerations in this case predict the appearance of a two-dimensional Weyl semimetal (2D WSM), with a pair of Weyl nodes of opposite chirality at charge neutrality that are protected…
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We report a topological phase transition in quantum-confined cadmium arsenide (Cd3As2) thin films under an in-plane Zeeman field when the Fermi level is tuned into the topological gap via an electric field. Symmetry considerations in this case predict the appearance of a two-dimensional Weyl semimetal (2D WSM), with a pair of Weyl nodes of opposite chirality at charge neutrality that are protected by space-time inversion (C2T) symmetry. We show that the 2D WSM phase displays unique transport signatures, including saturated resistivities on the order of h/e^2 that persist over a range of in-plane magnetic fields. Moreover, applying a small out-of-plane magnetic field, while kee** the in-plane field within the stability range of the 2D WSM phase, gives rise to a well-developed odd integer quantum Hall effect, characteristic of degenerate, massive Weyl fermions. A minimal four-band k.p model of Cd3As2, which incorporates first-principles effective g factors, qualitatively explains our findings.
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Submitted 29 June, 2023;
originally announced June 2023.
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Breaking electron pairs in the pseudogap regime of SmTiO$_3$/SrTiO$_3$/SmTiO$_3$ quantum wells
Authors:
Xinyi Wu,
Lu Chen,
Jianan Li,
Megan Briggeman,
Patrick B. Marshall,
Susanne Stemmer,
Patrick Irvin,
Jeremy Levy
Abstract:
The strongly correlated two-dimensional electron liquid within SmTiO$_3$/SrTiO$_3$/SmTiO$_3$ quantum well structures exhibits a pseudogap phase when the quantum well width is sufficiently narrow. Using low-temperature transport and optical experiments that drive the quantum-well system out of equilibrium, we find evidence of mobile, long-lived, negatively-charged quasiparticles, consistent with th…
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The strongly correlated two-dimensional electron liquid within SmTiO$_3$/SrTiO$_3$/SmTiO$_3$ quantum well structures exhibits a pseudogap phase when the quantum well width is sufficiently narrow. Using low-temperature transport and optical experiments that drive the quantum-well system out of equilibrium, we find evidence of mobile, long-lived, negatively-charged quasiparticles, consistent with the idea that the pseudogap phase arises from strongly bound electron pairs.
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Submitted 4 May, 2023;
originally announced May 2023.
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Induced superconductivity in the two-dimensional topological insulator phase of cadmium arsenide
Authors:
Arman Rashidi,
Robert Kealhofer,
Alexander C. Lygo,
Victor Huang,
Susanne Stemmer
Abstract:
Hybrid structures between conventional, s-wave superconductors and two-dimensional topological insulators (2D TIs) are a promising route to topological superconductivity. Here, we investigate planar Josephson junctions fabricated from hybrid structures that use thin films of cadmium arsenide (Cd3As2) as the 2D TI material. Measurements of superconducting interference patterns in a perpendicular ma…
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Hybrid structures between conventional, s-wave superconductors and two-dimensional topological insulators (2D TIs) are a promising route to topological superconductivity. Here, we investigate planar Josephson junctions fabricated from hybrid structures that use thin films of cadmium arsenide (Cd3As2) as the 2D TI material. Measurements of superconducting interference patterns in a perpendicular magnetic field are used to extract information about the spatial distribution of the supercurrent. We show that the interference patterns are distinctly different in junctions with and without mesa-isolation, respectively. In mesa-defined junctions, the bulk of the 2D TI appears to be almost completely shunted by supercurrent flowing along the edges, while the supercurrent is much more uniform across the junction when the Cd3As2 film extends beyond the device. We discuss the possible origins of the observed behaviors.
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Submitted 29 March, 2023;
originally announced March 2023.
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Anomalous superconducting diode effect in a polar superconductor
Authors:
Robert Kealhofer,
Hanbyeol Jeong,
Arman Rashidi,
Leon Balents,
Susanne Stemmer
Abstract:
A superconductor with broken time reversal and inversion symmetry may exhibit nonreciprocal charge transport, including a nonreciprocal critical current, also known as superconducting diode effect. We report an intrinsic superconducting diode effect in a polar strontium titanate film. Differential resistance measurements reveal a superconducting state whose depairing current is polarity dependent.…
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A superconductor with broken time reversal and inversion symmetry may exhibit nonreciprocal charge transport, including a nonreciprocal critical current, also known as superconducting diode effect. We report an intrinsic superconducting diode effect in a polar strontium titanate film. Differential resistance measurements reveal a superconducting state whose depairing current is polarity dependent. There is, however, no measurable deviation from Ohmic behavior, implying that this state does not arise from a bulk magnetochiral anisotropy. In the entire measurement range, the only deviation from linearity in the differential resistance is on the edge of the superconducting transition at high magnetic fields, likely due to the motion of flux vortices. Furthermore, the magnitude of the effect is preserved even when the in-plane magnetic field is oriented parallel to the current, indicating that this effect truly does not originate from a bulk magnetochiral anisotropy.
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Submitted 28 March, 2023;
originally announced March 2023.
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Two-dimensional topological insulator state in cadmium arsenide thin films
Authors:
Alexander C. Lygo,
Binghao Guo,
Arman Rashidi,
Victor Huang,
Pablo Cuadros-Romero,
Susanne Stemmer
Abstract:
Two-dimensional topological insulators (2D TIs) are a highly desired quantum phase but few materials have demonstrated clear signatures of a 2D TI state. It has been predicted that 2D TIs can be created from thin films of three-dimensional TIs by reducing the film thickness until the surface states hybridize. Here, we employ this technique to report the first observation of a 2D TI state in epitax…
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Two-dimensional topological insulators (2D TIs) are a highly desired quantum phase but few materials have demonstrated clear signatures of a 2D TI state. It has been predicted that 2D TIs can be created from thin films of three-dimensional TIs by reducing the film thickness until the surface states hybridize. Here, we employ this technique to report the first observation of a 2D TI state in epitaxial thin films of cadmium arsenide, a prototype Dirac semimetal in bulk form and a 3D TI in thin films. Using magnetotransport measurements with electrostatic gating, we observe a Landau level spectrum and quantum Hall effect that are in excellent agreement with those of an ideal 2D TI. Specifically, we observe a crossing of the zeroth Landau levels at a critical magnetic field. We show that the film thickness can be used to tune the critical magnetic field. Moreover, a larger change in film thickness causes a transition from a 2D TI to a 2D trivial insulator, just as predicted by theory. The high degree of tunability available in epitaxial cadmium arsenide heterostructures can thus be used to fine-tune the 2D TI, which is essential for future topological devices.
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Submitted 16 January, 2023; v1 submitted 6 January, 2023;
originally announced January 2023.
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Disentangling the Competing Mechanisms of Light-Induced Anomalous Hall Conductivity in Three-Dimensional Dirac Semimetal
Authors:
Yuta Murotani,
Natsuki Kanda,
Tomohiro Fujimoto,
Takuya Matsuda,
Manik Goyal,
Jun Yoshinobu,
Yohei Kobayashi,
Takashi Oka,
Susanne Stemmer,
Ryusuke Matsunaga
Abstract:
We experimentally elucidate the origin of the anomalous Hall conductivity in a three-dimensional Dirac semimetal, Cd$_3$As$_2$, driven by circularly polarized light. Using time-resolved terahertz Faraday rotation spectroscopy, we determine the transient Hall conductivity spectrum with special attention to its sign. Our results clearly show the dominance of direct photocurrent generation assisted b…
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We experimentally elucidate the origin of the anomalous Hall conductivity in a three-dimensional Dirac semimetal, Cd$_3$As$_2$, driven by circularly polarized light. Using time-resolved terahertz Faraday rotation spectroscopy, we determine the transient Hall conductivity spectrum with special attention to its sign. Our results clearly show the dominance of direct photocurrent generation assisted by the terahertz electric field. The contribution from the Floquet-Weyl nodes is found to be minor when the driving light is in resonance with interband transitions. We develop a generally applicable classification of microscopic mechanisms of light-induced anomalous Hall conductivity.
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Submitted 30 August, 2023; v1 submitted 3 November, 2022;
originally announced November 2022.
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Enhanced Dirac node separation in strained Cd3As2 topological semimetal
Authors:
Gauthier Krizman,
Joaquin Bermejo-Ortiz,
Manik Goyal,
Alexander C. Lygo,
Jiashu Wang,
Zhan Zhang,
Badih A. Assaf,
Susanne Stemmer,
Louis-Anne de Vaulchier,
Yves Guldner
Abstract:
In topological semimetals, nodes appear at symmetry points in the Brillouin zone as a result of band inversion, and yield quasi-relativistic massless fermions at low energies. Cd3As2 is a three-dimensional topological semimetal that hosts two Dirac cones responsible for a variety of quantum phenomena. In this work, we demonstrate the strain tuning of the Dirac nodes of Cd3As2 through a combination…
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In topological semimetals, nodes appear at symmetry points in the Brillouin zone as a result of band inversion, and yield quasi-relativistic massless fermions at low energies. Cd3As2 is a three-dimensional topological semimetal that hosts two Dirac cones responsible for a variety of quantum phenomena. In this work, we demonstrate the strain tuning of the Dirac nodes of Cd3As2 through a combination of magnetooptical infrared spectroscopy and high-resolution X-ray diffraction studies performed on epitaxial films. In these thin films, we observe a giant enhancement of the node separation in momentum space by close to a factor of 4. A combination of experimental measurements and theoretical modelling allows relate the origin of this enhancement to a strengthening of the topological band inversion driven by lattice strain. Our results demonstrate how strain can be used as a knob to tune the topological properties of semimetals and to potentially enhance their performance and response for various applications.
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Submitted 20 September, 2022;
originally announced September 2022.
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Stimulated Rayleigh Scattering Enhanced by a Longitudinal Plasma Mode in a Periodically Driven Dirac Semimetal Cd$_3$As$_2$
Authors:
Yuta Murotani,
Natsuki Kanda,
Tatsuhiko N. Ikeda,
Takuya Matsuda,
Manik Goyal,
Jun Yoshinobu,
Yohei Kobayashi,
Susanne Stemmer,
Ryusuke Matsunaga
Abstract:
Using broadband (12-45 THz) multi-terahertz spectroscopy, we show that stimulated Rayleigh scattering dominates the transient optical conductivity of cadmium arsenide, a Dirac semimetal, under an optical driving field at 30 THz. The characteristic dispersive lineshape with net optical gain is accounted for by optical transitions between light-induced Floquet subbands, strikingly enhanced by the lo…
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Using broadband (12-45 THz) multi-terahertz spectroscopy, we show that stimulated Rayleigh scattering dominates the transient optical conductivity of cadmium arsenide, a Dirac semimetal, under an optical driving field at 30 THz. The characteristic dispersive lineshape with net optical gain is accounted for by optical transitions between light-induced Floquet subbands, strikingly enhanced by the longitudinal plasma mode. Stimulated Rayleigh scattering with an unprecedentedly large refractive index change may pave the way for slow light generation in conductive solids at room temperature.
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Submitted 11 November, 2022; v1 submitted 24 December, 2021;
originally announced December 2021.
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Tracking ultrafast change of multiterahertz broadband response functions in a photoexcited Dirac semimetal Cd$_3$As$_2$ thin film
Authors:
Natsuki Kanda,
Yuta Murotani,
Takuya Matsuda,
Manik Goyal,
Salva Salmani-Rezaie,
Jun Yoshinobu,
Susanne Stemmer,
Ryusuke Matsunaga
Abstract:
The electromagnetic response of Dirac semimetals in the infrared and terahertz frequency ranges is attracting growing interest for potential applications in optoelectronics and nonlinear optics. The interplay between the free-carrier response and interband transitions in the gapless, linear dispersion relation plays a key role in enabling novel functionalities. Here we investigate ultrafast dynami…
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The electromagnetic response of Dirac semimetals in the infrared and terahertz frequency ranges is attracting growing interest for potential applications in optoelectronics and nonlinear optics. The interplay between the free-carrier response and interband transitions in the gapless, linear dispersion relation plays a key role in enabling novel functionalities. Here we investigate ultrafast dynamics in thin films of a photoexcited Dirac semimetal Cd$_3$As$_2$ by probing the broadband response functions as complex quantities in the multiterahertz region (10-45 THz, 40-180 meV, or 7-30 $μ$m), which covers the crossover between the inter and intraband response. We resolve dynamics of the photoexcited nonthermal electrons which merge with originally existing carriers to form a single thermalized electron gas and how it is facilitated by high-density excitation. We also demonstrate that a large reduction of the refractive index by 80% dominates the nonequilibrium infrared response, which can be utilized for designing ultrafast switches in active optoelectronics.
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Submitted 26 March, 2022; v1 submitted 18 October, 2021;
originally announced October 2021.
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Magneto-Elastic Coupling to Coherent Acoustic Phonon Modes in Ferrimagnetic Insulator GdTiO$_3$
Authors:
D. J. Lovinger,
E. Zoghlin,
P. Kissin,
G. Ahn,
K. Ahadi,
P. Kim,
M. Poore,
S. Stemmer,
S. J. Moon,
S. D. Wilson,
R. D. Averitt
Abstract:
In this work we investigate single crystal GdTiO$_{3}$, a promising candidate material for Floquet engineering and magnetic control, using ultrafast optical pump-probe reflectivity and magneto-optical Kerr spectroscopy. GdTiO${}_{3}$ is a Mott-Hubbard insulator with a ferrimagnetic and orbitally ordered ground state (\textit{T${}_{C}$} = 32 K). We observe multiple signatures of the magnetic phase…
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In this work we investigate single crystal GdTiO$_{3}$, a promising candidate material for Floquet engineering and magnetic control, using ultrafast optical pump-probe reflectivity and magneto-optical Kerr spectroscopy. GdTiO${}_{3}$ is a Mott-Hubbard insulator with a ferrimagnetic and orbitally ordered ground state (\textit{T${}_{C}$} = 32 K). We observe multiple signatures of the magnetic phase transition in the photoinduced reflectivity signal, in response to above band-gap 660 nm excitation. Magnetic dynamics measured via Kerr spectroscopy reveal optical perturbation of the ferrimagnetic order on spin-lattice coupling timescales, highlighting the competition between the Gd${}^{3+}$ and Ti${}^{3+}$ magnetic sub-lattices. Furthermore, a strong coherent oscillation is present in the reflection and Kerr dynamics, attributable to an acoustic strain wave launched by the pump pulse. The amplitude of this acoustic mode is highly dependent on the magnetic order of the system, growing sharply in magnitude at \textit{T${}_{C}$}, indicative of strong magneto-elastic coupling. The driving mechanism, involving strain-induced modification of the magnetic exchange interaction, implies an indirect method of coupling light to the magnetic degrees of freedom and emphasizes the potential of GdTiO${}_{3}$ as a tunable quantum material.
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Submitted 21 September, 2020;
originally announced September 2020.
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Order-Disorder Ferroelectric Transition of Strained SrTiO3
Authors:
Salva Salmani-Rezaie,
Kaveh Ahadi,
William M. Strickland,
Susanne Stemmer
Abstract:
SrTiO3 is an incipient ferroelectric that is believed to exhibit a prototype displacive, soft mode ferroelectric transition when subjected to mechanical stress or alloying. We use high-angle annular dark-field imaging in scanning transmission electron microscopy to reveal local polar regions in the room-temperature, paraelectric phase of strained SrTiO3 films, which undergo a ferroelectric transit…
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SrTiO3 is an incipient ferroelectric that is believed to exhibit a prototype displacive, soft mode ferroelectric transition when subjected to mechanical stress or alloying. We use high-angle annular dark-field imaging in scanning transmission electron microscopy to reveal local polar regions in the room-temperature, paraelectric phase of strained SrTiO3 films, which undergo a ferroelectric transition at low temperatures. These films contain nanometer-sized domains in which the Ti columns are displaced. In contrast, these nanodomains are absent in unstrained films, which do not become ferroelectric. The results show that the ferroelectric transition of strained SrTiO3 is an order-disorder transition. We discuss the impact of the results on the nature of the ferroelectric transition of SrTiO3.
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Submitted 5 August, 2020;
originally announced August 2020.
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Topological surface states in strained Dirac semimetal thin films
Authors:
Pablo Villar Arribi,
Jian-Xin Zhu,
Timo Schumann,
Susanne Stemmer,
Anton A. Burkov,
Olle Heinonen
Abstract:
We computationally study the Fermi arc states in a Dirac semimetal, both in a semi-infinite slab and in the thin-film limit. We use Cd$_3$A$_2$ as a model system, and include perturbations that break the $C_4$ symmetry and inversion symmetry. The surface states are protected by the mirror symmetries present in the bulk states and thus survive these perturbations. The Fermi arc states persist down…
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We computationally study the Fermi arc states in a Dirac semimetal, both in a semi-infinite slab and in the thin-film limit. We use Cd$_3$A$_2$ as a model system, and include perturbations that break the $C_4$ symmetry and inversion symmetry. The surface states are protected by the mirror symmetries present in the bulk states and thus survive these perturbations. The Fermi arc states persist down to very thin films, thinner than presently measured experimentally, but are affected by breaking the symmetry of the Hamiltonian. Our findings are compatible with experimental observations of transport in Cd$_3$As$_2$, and also suggest that symmetry-breaking terms that preserve the Fermi arc states nevertheless can have a profound effect in the thin film limit.
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Submitted 17 June, 2020;
originally announced June 2020.
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Correlating magnetic structure and magnetotransport in semimetal thin films of Eu$_{1-x}$Sm$_x$TiO$_3$
Authors:
Zach Porter,
Ryan F. Need,
Kaveh Ahadi,
Yang Zhao,
Zhijun Xu,
Brian J. Kirby,
Jeffrey W. Lynn,
Susanne Stemmer,
Stephen D. Wilson
Abstract:
We report on the evolution of the average and depth-dependent magnetic order in thin film samples of biaxially stressed and electron-doped EuTiO$_3$ for samples across a do** range $<$0.1 to 7.8 $\times 10^{20}$ cm$^{-3}$. Under an applied in-plane magnetic field, the G-type antiferromagnetic ground state undergoes a continuous spin-flop phase transition into in-plane, field-polarized ferromagne…
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We report on the evolution of the average and depth-dependent magnetic order in thin film samples of biaxially stressed and electron-doped EuTiO$_3$ for samples across a do** range $<$0.1 to 7.8 $\times 10^{20}$ cm$^{-3}$. Under an applied in-plane magnetic field, the G-type antiferromagnetic ground state undergoes a continuous spin-flop phase transition into in-plane, field-polarized ferromagnetism. The critical field for ferromagnetism slightly decreases with an increasing number of free carriers, yet the field evolution of the spin-flop transition is qualitatively similar across the do** range. Unexpectedly, we observe interfacial ferromagnetism with saturated Eu$^{2+}$ moments at the substrate interface at low fields preceding ferromagnetic saturation throughout the bulk of the degenerate semiconductor film. We discuss the implications of these findings for the unusual magnetotransport properties of this compound.
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Submitted 20 May, 2020;
originally announced May 2020.
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Possible signatures of mixed-parity superconductivity in doped polar SrTiO3 films
Authors:
Timo Schumann,
Luca Galletti,
Hanbyeol Jeong,
Kaveh Ahadi,
William M. Strickland,
Salva Salmani-Rezaie,
Susanne Stemmer
Abstract:
Superconductors that possess both broken spatial inversion symmetry and spin-orbit interactions exhibit a mix of spin singlet and triplet pairing. Here, we report on measurements of the superconducting properties of electron-doped, strained SrTiO3 films. These films have an enhanced superconducting transition temperature and were previously shown to undergo a transition to a polar phase prior to b…
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Superconductors that possess both broken spatial inversion symmetry and spin-orbit interactions exhibit a mix of spin singlet and triplet pairing. Here, we report on measurements of the superconducting properties of electron-doped, strained SrTiO3 films. These films have an enhanced superconducting transition temperature and were previously shown to undergo a transition to a polar phase prior to becoming superconducting. We show that some films show signatures of an unusual superconducting state, such as an in-plane critical field that is higher than both the paramagnetic and orbital pair breaking limits. Moreover, nonreciprocal transport, which reflects the ratio of odd versus even pairing interactions, is observed. Together, these characteristics indicate that these films provide a tunable platform for investigations of unconventional superconductivity.
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Submitted 23 March, 2020;
originally announced March 2020.
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Probing charge pum** and relaxation of the chiral anomaly in a Dirac semimetal
Authors:
Bing Cheng,
Timo Schumann,
Susanne Stemmer,
N. P. Armitage
Abstract:
The linear band crossings of 3D Dirac and Weyl semimetals are characterized by a charge chirality, the parallel or anti-parallel locking of electron spin to its momentum. Such materials are believed to exhibit a ${\bf E} \cdot {\bf B}$ chiral magnetic effect that is associated with the near conservation of chiral charge. Here, we use magneto-terahertz spectroscopy to study epitaxial Cd$_3$As$_2$ f…
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The linear band crossings of 3D Dirac and Weyl semimetals are characterized by a charge chirality, the parallel or anti-parallel locking of electron spin to its momentum. Such materials are believed to exhibit a ${\bf E} \cdot {\bf B}$ chiral magnetic effect that is associated with the near conservation of chiral charge. Here, we use magneto-terahertz spectroscopy to study epitaxial Cd$_3$As$_2$ films and extract their conductivities $σ(ω)$ as a function of ${\bf E} \cdot {\bf B}$. As field is applied, we observe a remarkably sharp Drude response that rises out of the broader background. Its appearance is a definitive signature of a new transport channel and consistent with the chiral response, with its spectral weight a measure of the net chiral charge and width a measure of the scattering rate between chiral species. The field independence of the chiral relaxation establishes that it is set by the approximate conservation of the isospin that labels the crystalline point-group representations.
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Submitted 31 May, 2021; v1 submitted 30 October, 2019;
originally announced October 2019.
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Determination of the crystal field splitting energy in Cd3As2 using magnetooptics
Authors:
G. Krizman,
T. Schumann,
S. Tchoumakov,
B. A. Assaf,
S. Stemmer,
L. A. de Vaulchier,
Y. Guldner
Abstract:
Symmetry considerations are of extreme importance to the topological properties of crystals. A crystal field splitting δ yields Dirac nodes near the Brillouin zone center in Cd3As2, but its value has yet to be determined with precision. We study the band structure of Cd3As2 using magnetooptical infrared spectroscopy measurements on epilayers with low carrier density grown by molecular beam epitaxy…
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Symmetry considerations are of extreme importance to the topological properties of crystals. A crystal field splitting δ yields Dirac nodes near the Brillouin zone center in Cd3As2, but its value has yet to be determined with precision. We study the band structure of Cd3As2 using magnetooptical infrared spectroscopy measurements on epilayers with low carrier density grown by molecular beam epitaxy. By combining angular dependent cyclotron resonance with Landau level spectroscopy measurements in the Faraday geometry, we determine that δ is positive and equal to 15+/-5 meV in Cd3As2. Our results lead to a more accurate knowledge of the details of the band structure of this Dirac semimetal such as the position its Dirac nodes in momentum space and their splitting into Weyl nodes under a magnetic field.
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Submitted 2 October, 2019;
originally announced October 2019.
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Ferroelectric enhancement of superconductivity in compressively strained SrTiO$_3$ films
Authors:
Ryan Russell,
Noah Ratcliff,
Kaveh Ahadi,
Lianyang Dong,
Susanne Stemmer,
John W. Harter
Abstract:
SrTiO$_3$ is an incipient ferroelectric on the verge of a polar instability, which is avoided at low temperatures by quantum fluctuations. Within this unusual quantum paraelectric phase, superconductivity persists despite extremely dilute carrier densities. Ferroelectric fluctuations have been suspected to play a role in the origin of superconductivity by contributing to electron pairing. To inves…
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SrTiO$_3$ is an incipient ferroelectric on the verge of a polar instability, which is avoided at low temperatures by quantum fluctuations. Within this unusual quantum paraelectric phase, superconductivity persists despite extremely dilute carrier densities. Ferroelectric fluctuations have been suspected to play a role in the origin of superconductivity by contributing to electron pairing. To investigate this possibility, we used optical second harmonic generation to measure the do** and temperature dependence of the ferroelectric order parameter in compressively strained SrTiO$_3$ thin films. At low temperatures, we uncover a spontaneous out-of-plane ferroelectric polarization with an onset that correlates perfectly with normal-state electrical resistivity anomalies. These anomalies have previously been associated with an enhancement of the superconducting critical temperature in doped SrTiO$_3$ films, directly linking the ferroelectric and superconducting phases. We develop a long-range mean-field Ising model of the ferroelectric phase transition to interpret the data and extract the relevant energy scales in the system. Our results support a long-suspected connection between ferroelectricity and superconductivity in SrTiO$_3$, but call into question the role played by ferroelectric fluctuations.
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Submitted 10 September, 2019;
originally announced September 2019.
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Efficient Terahertz Harmonic Generation with Coherent Acceleration of Electrons in the Dirac Semimetal Cd3As2
Authors:
Bing Cheng,
Natsuki Kanda,
Tatsuhiko N. Ikeda,
Takuya Matsuda,
Peiyu Xia,
Timo Schumann,
Susanne Stemmer,
Jiro Itatani,
N. P. Armitage,
Ryusuke Matsunaga
Abstract:
We report strong terahertz (~10^12 Hz) high harmonic generation in thin films of Cd3As2, a three-dimensional Dirac semimetal at room temperature. The third harmonics is detectable with tabletop light source and can be as strong as 100 V/cm by applying the fundamental field of 6.5 kV/cm inside the film, showing an unprecedented efficiency for terahertz frequency conversion. Our time-resolved terahe…
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We report strong terahertz (~10^12 Hz) high harmonic generation in thin films of Cd3As2, a three-dimensional Dirac semimetal at room temperature. The third harmonics is detectable with tabletop light source and can be as strong as 100 V/cm by applying the fundamental field of 6.5 kV/cm inside the film, showing an unprecedented efficiency for terahertz frequency conversion. Our time-resolved terahertz spectroscopy and calculations also clarify the microscopic mechanism of the nonlinearity originating in the coherent acceleration of Dirac electrons in momentum space. Our results provide clear insights for nonlinear current of Dirac electrons driven by terahertz field under an influence of scattering, paving the way toward novel devices for high-speed electronics and photonics based on topological semimetals.
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Submitted 24 March, 2020; v1 submitted 20 August, 2019;
originally announced August 2019.
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Point group symmetry of cadmium arsenide thin films determined by convergent beam electron diffraction
Authors:
Honggyu Kim,
Manik Goyal,
Salva Salmani-Rezaie,
Timo Schumann,
Tyler N. Pardue,
Jian-Min Zuo,
Susanne Stemmer
Abstract:
Cadmium arsenide (Cd3As2) is one of the first materials to be discovered to belong to the class of three-dimensional topological semimetals. Reported room temperature crystal structures of Cd3As2 reported differ subtly in the way the Cd vacancies are arranged within its antifluorite-derived structure, which determines if an inversion center is present and if Cd3As2 is a Dirac or Weyl semimetal. He…
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Cadmium arsenide (Cd3As2) is one of the first materials to be discovered to belong to the class of three-dimensional topological semimetals. Reported room temperature crystal structures of Cd3As2 reported differ subtly in the way the Cd vacancies are arranged within its antifluorite-derived structure, which determines if an inversion center is present and if Cd3As2 is a Dirac or Weyl semimetal. Here, we apply convergent beam electron diffraction (CBED) to determine the point group of Cd3As2 thin films grown by molecular beam epitaxy. Using CBED patterns from multiple zone axes, high-angle annular dark-field images acquired in scanning transmission electron microscopy, and Bloch wave simulations, we show that Cd3As2 belongs to the tetragonal 4/mmm point group, which is centrosymmetric. The results show that CBED can distinguish very subtle differences in the crystal structure of a topological semimetal, a capability that will be useful for designing materials and thin film heterostructures with topological states that depend on the presence of certain crystal symmetries.
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Submitted 15 August, 2019;
originally announced August 2019.
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Soft phonons and ultralow lattice thermal conductivity in the Dirac semimetal Cd3As2
Authors:
Shengying Yue,
Hamid T. Chorsi,
Manik Goyal,
Timo Schumann,
Runqing Yang,
Tashi Xu,
Bowen Deng,
Susanne Stemmer,
Jon A. Schuller,
Bolin Liao
Abstract:
Recently, Cd3As2 has attracted intensive research interest as an archetypical Dirac semimetal, hosting three-dimensional linear-dispersive electronic bands near the Fermi level. Previous studies have shown that single-crystalline Cd3As2 has an anomalously low lattice thermal conductivity, ranging from 0.3 W/mK to 0.7 W/mK at 300 K, which has been attributed to point defects. In this work, we combi…
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Recently, Cd3As2 has attracted intensive research interest as an archetypical Dirac semimetal, hosting three-dimensional linear-dispersive electronic bands near the Fermi level. Previous studies have shown that single-crystalline Cd3As2 has an anomalously low lattice thermal conductivity, ranging from 0.3 W/mK to 0.7 W/mK at 300 K, which has been attributed to point defects. In this work, we combine first-principles lattice dynamics calculations and temperature-dependent high-resolution Raman spectroscopy of high-quality single-crystal thin films grown by molecular beam epitaxy to reveal the existence of a group of soft optical phonon modes at the Brillouin zone center of Cd3As2. These soft phonon modes significantly increase the scattering phase space of heat-carrying acoustic phonons and are the origin of the low lattice thermal conductivity of Cd3As2. Furthermore, we show that the interplay between the phonon-phonon Umklapp scattering rates and the soft optical phonon frequency explains the unusual non-monotonic temperature dependence of the lattice thermal conductivity of Cd3As2. Our results further suggest that the soft phonon modes are potentially induced by a Kohn anomaly associated with the Dirac nodes, in analogy to similar, nonetheless weaker, effects in graphene and Weyl semimetals.
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Submitted 10 August, 2019;
originally announced August 2019.
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Widely Tunable Optical and Thermal Properties of Dirac Semimetal Cd$_3$As$_2$
Authors:
Hamid T. Chorsi,
Shengying Yue,
Prasad P. Iyer,
Manik Goyal,
Timo Schumann,
Susanne Stemmer,
Bolin Liao,
Jon A. Schuller
Abstract:
In this paper we report a detailed analysis of the temperature-dependent optical properties of epitaxially grown cadmium arsenide (Cd$_3$As$_2$), a newly discovered three-dimensional Dirac semimetal. Dynamic Fermi level tuning -- instigated from Pauli-blocking in the linear Dirac cone -- and varying Drude response, generate large variations in the mid and far-infrared optical properties. We demons…
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In this paper we report a detailed analysis of the temperature-dependent optical properties of epitaxially grown cadmium arsenide (Cd$_3$As$_2$), a newly discovered three-dimensional Dirac semimetal. Dynamic Fermi level tuning -- instigated from Pauli-blocking in the linear Dirac cone -- and varying Drude response, generate large variations in the mid and far-infrared optical properties. We demonstrate thermo-optic shifts larger than those of traditional III-V semiconductors, which we attribute to the obtained large thermal expansion coefficient as revealed by first-principles calculations. Electron scattering rate, plasma frequency edge, Fermi level shift, optical conductivity, and electron effective mass analysis of Cd$_3$As$_2$ thin-films are quantified and discussed in detail. Our ab initio density functional study and experimental analysis of epitaxially grown Cd$_3$As$_2$ promise applications for nanophotonic and nanoelectronic devices, such as reconfigurable metamaterials and metasurfaces, nanoscale thermal emitters, and on-chip directional antennas.
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Submitted 28 July, 2019;
originally announced July 2019.
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Velocity Saturation in La-doped BaSnO3 Thin Films
Authors:
Hareesh Chandrasekar,
Junao Cheng,
Tianshi Wang,
Zhanbo Xia,
Nicholas G. Combs,
Christopher R. Freeze,
Patrick B. Marshall,
Joe McGlone,
Aaron Arehart,
Steven Ringel,
Anderson Janotti,
Susanne Stemmer,
Wu Lu,
Siddharth Rajan
Abstract:
BaSnO_{3}, a high mobility perovskite oxide, is an attractive material for oxide-based electronic devices. However, in addition to low-field mobility, high-field transport properties such as the saturation velocity of carriers play a major role in determining device performance. We report on the experimental measurement of electron saturation velocity in La-doped BaSnO_{3} thin films for a range o…
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BaSnO_{3}, a high mobility perovskite oxide, is an attractive material for oxide-based electronic devices. However, in addition to low-field mobility, high-field transport properties such as the saturation velocity of carriers play a major role in determining device performance. We report on the experimental measurement of electron saturation velocity in La-doped BaSnO_{3} thin films for a range of do** densities. Predicted saturation velocities based on a simple LO-phonon emission model using an effective LO phonon energy of 120 meV show good agreement with measurements of velocity saturation in La-doped BaSnO_{3} films.. Density-dependent saturation velocity in the range of 1.6x10^{7} cm/s reducing to 2x10^{6} cm/s is predicted for δ-doped BaSnO3 channels with carrier densities ranging from 10^{13} cm^{-2} to 2x10^{14} cm^{-2} respectively. These results are expected to aid the informed design of BaSnO3 as the active material for high-charge density electronic transistors.
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Submitted 3 August, 2019; v1 submitted 13 May, 2019;
originally announced May 2019.
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A Large Effective Phonon Magnetic Moment in a Dirac Semimetal
Authors:
Bing Cheng,
T. Schumann,
Y. C. Wang,
X. S. Zhang,
D. Barbalas,
S. Stemmer,
N. P. Armitage
Abstract:
We investigated the magnetoterahertz response of the Dirac semimetal Cd$_3$As$_2$ and observed a particularly low frequency optical phonon, as well as a very prominent and field sensitive cyclotron resonance. As the cyclotron frequency is tuned with field to pass through the phonon, the phonon become circularly polarized as shown by a notable splitting in their response to right- and left-hand pol…
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We investigated the magnetoterahertz response of the Dirac semimetal Cd$_3$As$_2$ and observed a particularly low frequency optical phonon, as well as a very prominent and field sensitive cyclotron resonance. As the cyclotron frequency is tuned with field to pass through the phonon, the phonon become circularly polarized as shown by a notable splitting in their response to right- and left-hand polarized light. This splitting can be expressed as an effective phonon magnetic moment that is approximately 2.7 times the Bohr magneton, which is almost four orders of magnitude larger than ab initio calculations predict for phonon magnetic moments in nonmagnetic insulators. This exceedingly large value is due to the coupling of the phonons to the cyclotron motion and is controlled directly by the electron-phonon coupling constant. This field tunable circular-polarization selective coupling provides new functionality for nonlinear optics to create light-induced topological phases in Dirac semimetals.
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Submitted 9 July, 2020; v1 submitted 1 May, 2019;
originally announced May 2019.
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Basal-plane growth of cadmium arsenide by molecular beam epitaxy
Authors:
David A. Kealhofer,
Honggyu Kim,
Timo Schumann,
Manik Goyal,
Luca Galletti,
Susanne Stemmer
Abstract:
(001)-oriented thin films of the three-dimensional Dirac semimetal cadmium arsenide can realize a quantum spin Hall insulator and other kinds of topological physics, all within the flexible architecture of epitaxial heterostructures. Here, we report a method for growing (001) cadmium arsenide films using molecular beam epitaxy. The introduction of a thin indium arsenide wetting layer improves surf…
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(001)-oriented thin films of the three-dimensional Dirac semimetal cadmium arsenide can realize a quantum spin Hall insulator and other kinds of topological physics, all within the flexible architecture of epitaxial heterostructures. Here, we report a method for growing (001) cadmium arsenide films using molecular beam epitaxy. The introduction of a thin indium arsenide wetting layer improves surface morphology and structural characteristics, as measured by x-ray diffraction and reflectivity, atomic force microscopy, and scanning transmission electron microscopy. The electron mobility of 50-nm-thick films is found to be 9300 cm2/Vs at 2 K, comparable to the highest-quality films grown in the conventional (112) orientation. This work demonstrates a simple experimental framework for exploring topological phases that are predicted to exist in proximity to the three-dimensional Dirac semimetal phase.
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Submitted 30 March, 2019;
originally announced April 2019.
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Absence of signatures of Weyl orbits in the thickness dependence of quantum transport in cadmium arsenide
Authors:
Luca Galletti,
Timo Schumann,
David A. Kealhofer,
Manik Goyal,
Susanne Stemmer
Abstract:
In a Weyl orbit, the Fermi arc surface states on opposite surfaces of the topological semimetal are connected through the bulk Weyl or Dirac nodes. Having a real-space component, these orbits accumulate a sample-size-dependent phase. Following recent work on the three-dimensional Dirac semimetal cadmium arsenide (Cd3As2), we have sought evidence for this thickness-dependent effect in quantum oscil…
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In a Weyl orbit, the Fermi arc surface states on opposite surfaces of the topological semimetal are connected through the bulk Weyl or Dirac nodes. Having a real-space component, these orbits accumulate a sample-size-dependent phase. Following recent work on the three-dimensional Dirac semimetal cadmium arsenide (Cd3As2), we have sought evidence for this thickness-dependent effect in quantum oscillations and quantum Hall plateaus in (112)-oriented Cd3As2 thin films grown by molecular beam epitaxy. We compare quantum transport in films of varying thickness at apparently identical gate-tuned carrier concentrations and find no clear dependence of the relative phase of the quantum oscillations on the sample thickness. We show that small variations in carrier densities, difficult to detect in low-field Hall measurements, lead to shifts in quantum oscillations that are commensurate with previously reported phase shifts. Future claims of Weyl orbits based on the thickness dependence of quantum transport data require additional studies that demonstrate that these competing effects have been disentangled.
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Submitted 30 March, 2019;
originally announced April 2019.
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Resolving interfacial charge transfer in titanate superlattices using resonant X-ray reflectometry
Authors:
R. F. Need,
P. B. Marshall,
E. Weschke,
A. J. Grutter,
D. A. Gilbert,
E. Arenholz,
P. Shafer,
S. Stemmer,
S. D. Wilson
Abstract:
Charge transfer in oxide heterostructures can be tuned to promote emergent interfacial states, and accordingly, has been the subject of intense study in recent years. However, accessing the physics at these interfaces, which are often buried deep below the sample surface, remains difficult. Addressing this challenge requires techniques capable of measuring the local electronic structure with high-…
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Charge transfer in oxide heterostructures can be tuned to promote emergent interfacial states, and accordingly, has been the subject of intense study in recent years. However, accessing the physics at these interfaces, which are often buried deep below the sample surface, remains difficult. Addressing this challenge requires techniques capable of measuring the local electronic structure with high-resolution depth dependence. Here, we have used linearly-polarized resonant X-ray reflectometry (RXR) as a means to visualize charge transfer in oxide superlattices with atomic layer precision. From our RXR measurements, we extract valence depth profiles of SmTiO$_3$ (SmTO)/SrTiO$_3$ (STO) heterostructures with STO quantum wells varying in thickness from 5 SrO planes down to a single, atomically thin SrO plane. At the polar-nonpolar SmTO/STO interface, an electrostatic discontinuity leads to approximately half an electron per areal unit cell transferred from the interfacial SmO layer into the neighboring STO quantum well. We observe this charge transfer as a suppression of the t$_{2g}$ absorption peaks that minimizes contrast with the neighboring SmTO layers at those energies and leads to a pronounced absence of superlattice peaks in the reflectivity data. Our results demonstrate the sensitivity of RXR to electronic reconstruction at the atomic scale, and establish RXR as a powerful means of characterizing charge transfer at buried oxide interfaces.
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Submitted 14 June, 2018;
originally announced June 2018.
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Electron nematic fluid in a strained Sr3Ru2O7 film
Authors:
Patrick B. Marshall,
Kaveh Ahadi,
Honggyu Kim,
Susanne Stemmer
Abstract:
Sr3Ru2O7 belongs to the family of layered strontium ruthenates and exhibits a range of unusual emergent properties, such as electron nematic behavior and metamagnetism. Here, we show that epitaxial film strain significantly modifies these phenomena. In particular, we observe enhanced magnetic interactions and an electron nematic phase that extends to much higher temperatures and over a larger magn…
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Sr3Ru2O7 belongs to the family of layered strontium ruthenates and exhibits a range of unusual emergent properties, such as electron nematic behavior and metamagnetism. Here, we show that epitaxial film strain significantly modifies these phenomena. In particular, we observe enhanced magnetic interactions and an electron nematic phase that extends to much higher temperatures and over a larger magnetic field range than in bulk single crystals. Furthermore, the films show an unusual anisotropic non-Fermi liquid behavior that is controlled by the direction of the applied magnetic field. At high magnetic fields the metamagnetic transition to a ferromagnetic phase recovers isotropic Fermi-liquid behavior. The results support the interpretation that these phenomena are linked to the special features of the Fermi surface, which can be tuned by both film strain and an applied magnetic field.
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Submitted 23 April, 2018;
originally announced April 2018.
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Spontaneous Hall effects in the electron system at the SmTiO3/EuTiO3 interface
Authors:
Kaveh Ahadi,
Honggyu Kim,
Susanne Stemmer
Abstract:
Magnetotransport and magnetism of epitaxial SmTiO3/EuTiO3 heterostructures grown by molecular beam epitaxy are investigated. It is shown that the polar discontinuity at the interface introduces ~ 3.9x10^14 cm^-2 carriers into the EuTiO3. The itinerant carriers exhibit two distinct contributions to the spontaneous Hall effect. The anomalous Hall effect appears despite a very small magnetization, in…
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Magnetotransport and magnetism of epitaxial SmTiO3/EuTiO3 heterostructures grown by molecular beam epitaxy are investigated. It is shown that the polar discontinuity at the interface introduces ~ 3.9x10^14 cm^-2 carriers into the EuTiO3. The itinerant carriers exhibit two distinct contributions to the spontaneous Hall effect. The anomalous Hall effect appears despite a very small magnetization, indicating a non-collinear spin structure and the second contribution resembles a topological Hall effect. Qualitative differences exist in the temperature dependence of both Hall effects when compared to uniformly doped EuTiO3. In particular, the topological Hall effect contribution appears at higher temperatures and the anomalous Hall effect shows a sign change with temperature. The results suggest that interfaces can be used to tune topological phenomena in itinerant magnetic systems.
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Submitted 11 April, 2018;
originally announced April 2018.
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Two-Dimensional Dirac Fermions in Thin Films of Cd3As2
Authors:
Luca Galletti,
Timo Schumann,
Omor F. Shoron,
Manik Goyal,
David A. Kealhofer,
Honggyu Kim,
Susanne Stemmer
Abstract:
Two-dimensional states in confined thin films of the three-dimensional Dirac semimetal Cd3As2 are probed by transport and capacitance measurements under applied magnetic and electric fields. The results establish the two-dimensional Dirac electronic spectrum of these states. We observe signatures of p-type conduction in the two-dimensional states as the Fermi level is tuned across their charge neu…
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Two-dimensional states in confined thin films of the three-dimensional Dirac semimetal Cd3As2 are probed by transport and capacitance measurements under applied magnetic and electric fields. The results establish the two-dimensional Dirac electronic spectrum of these states. We observe signatures of p-type conduction in the two-dimensional states as the Fermi level is tuned across their charge neutrality point and the presence of a zero energy Landau level, all of which indicate topologically non-trivial states. The resistance at the charge neutrality point is approximately h/e2 and increases rapidly under the application of a magnetic field. The results open many possibilities for gate-tunable topological devices and for the exploration of novel physics in the zero energy Landau level.
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Submitted 26 February, 2018;
originally announced February 2018.
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Observation of the quantum Hall effect in confined films of the three-dimensional Dirac semimetal Cd3As2
Authors:
Timo Schumann,
Luca Galletti,
David A. Kealhofer,
Honggyu Kim,
Manik Goyal,
Susanne Stemmer
Abstract:
The magnetotransport properties of epitaxial films of Cd3As2, a paradigm three-dimensional Dirac semimetal, are investigated. We show that an energy gap opens in the bulk electronic states of sufficiently thin films and, at low temperatures, carriers residing in surface states dominate the electrical transport. The carriers in these states are sufficiently mobile to give rise to a quantized Hall e…
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The magnetotransport properties of epitaxial films of Cd3As2, a paradigm three-dimensional Dirac semimetal, are investigated. We show that an energy gap opens in the bulk electronic states of sufficiently thin films and, at low temperatures, carriers residing in surface states dominate the electrical transport. The carriers in these states are sufficiently mobile to give rise to a quantized Hall effect. The sharp quantization demonstrates surface transport that is virtually free of parasitic bulk conduction and paves the way for novel quantum transport studies in this class of topological materials. Our results also demonstrate that heterostructuring approaches can be used to study and engineer quantum states in topological semimetals.
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Submitted 21 November, 2017;
originally announced November 2017.
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Octahedral tilt independent magnetism in confined GdTiO$_3$ films
Authors:
R. F. Need,
B. J. Isaac,
B. J. Kirby,
J. A. Borchers,
S. Stemmer,
S. D. Wilson
Abstract:
Polarized neutron reflectometry measurements are presented exploring the evolution of ferrimagnetism in GdTiO$_3$ films as they are confined between SrTiO$_3$ layers of variable thicknesses. As GdTiO$_3$ films approach the thin layer limit and are confined within a substantially thicker SrTiO$_3$ matrix, the TiO$_6$ octahedral tilts endemic to GdTiO$_3$ coherently relax toward the undistorted, cub…
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Polarized neutron reflectometry measurements are presented exploring the evolution of ferrimagnetism in GdTiO$_3$ films as they are confined between SrTiO$_3$ layers of variable thicknesses. As GdTiO$_3$ films approach the thin layer limit and are confined within a substantially thicker SrTiO$_3$ matrix, the TiO$_6$ octahedral tilts endemic to GdTiO$_3$ coherently relax toward the undistorted, cubic phase of SrTiO$_3$. Our measurements reveal that the ferrimagnetic state within the GdTiO$_3$ layers survives as the TiO$_6$ octahedral tilts in the GdTiO$_3$ layers are suppressed. Furthermore, our data suggest that a magnetic dead layer develops within the GdTiO$_3$ layer at each GdTiO$_3$/ SrTiO$_3$ interface. The ferrimagnetic moment inherent to the core GdTiO$_3$ layers is negligibly (in models with dead layers) or only weakly (in models without dead layers) impacted as the octahedral tilt angles are suppressed by more than 50$\%$ and the $t_{2g}$ bandwidth is dramatically renormalized.
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Submitted 15 November, 2017;
originally announced November 2017.
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Evidence of a topological Hall effect in Eu$_{1-x}$Sm$_x$TiO$_3$
Authors:
Kaveh Ahadi,
Luca Galletti,
Susanne Stemmer
Abstract:
We report on the observation of a possible topological Hall effect in thin films of the itinerant ferromagnet Eu1-xSmxTiO3. EuTiO3 and Eu0.955Sm0.045TiO3 films were grown by molecular beam epitaxy. The EuTiO3 film is insulating. The Hall resistivity of the Eu0.955Sm0.045TiO3 films exhibits the anomalous Hall effect below the Curie temperature of ~ 5 K as well as additional features that appear at…
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We report on the observation of a possible topological Hall effect in thin films of the itinerant ferromagnet Eu1-xSmxTiO3. EuTiO3 and Eu0.955Sm0.045TiO3 films were grown by molecular beam epitaxy. The EuTiO3 film is insulating. The Hall resistivity of the Eu0.955Sm0.045TiO3 films exhibits the anomalous Hall effect below the Curie temperature of ~ 5 K as well as additional features that appear at 2 K. It is shown that these features are magnetic in origin and consistent with the topological Hall effect seen in materials systems with topologically nontrivial spin textures, such as skyrmions. The results open up interesting possibilities for epitaxial hybrid heterostructures that combine topological magnetic states, tunable carrier densities, and other phenomena.
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Submitted 10 October, 2017;
originally announced October 2017.
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Response of the lattice across the filling-controlled Mott metal-insulator transition of a rare earth titanate
Authors:
Honggyu Kim,
Patrick B. Marshall,
Kaveh Ahadi,
Thomas E. Mates,
Evgeny Mikheev,
Susanne Stemmer
Abstract:
The lattice response of a prototype Mott insulator, SmTiO3, to hole do** is investigated with atomic-scale spatial resolution. SmTiO3 films are doped with Sr on the Sm site with concentrations that span the insulating and metallic sides of the filling-controlled Mott metal-insulator transition (MIT). The GdFeO3-type distortions are investigated using an atomic resolution scanning transmission el…
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The lattice response of a prototype Mott insulator, SmTiO3, to hole do** is investigated with atomic-scale spatial resolution. SmTiO3 films are doped with Sr on the Sm site with concentrations that span the insulating and metallic sides of the filling-controlled Mott metal-insulator transition (MIT). The GdFeO3-type distortions are investigated using an atomic resolution scanning transmission electron microscopy technique that can resolve small lattice distortions with picometer precision. We show that these distortions are gradually and uniformly reduced as the Sr concentration is increased without any phase separation. Significant distortions persist into the metallic state. The results present a new picture of the physics of this prototype filling-controlled MIT, which is discussed.
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Submitted 3 October, 2017;
originally announced October 2017.
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Growth of strontium ruthenate films by hybrid molecular beam epitaxy
Authors:
Patrick B. Marshall,
Honggyu Kim,
Kaveh Ahadi,
Susanne Stemmer
Abstract:
We report on the growth of epitaxial Sr2RuO4 films using a hybrid molecular beam epitaxy approach in which a volatile precursor containing RuO4 is used to supply ruthenium and oxygen. The use of the precursor overcomes a number of issues encountered in traditional MBE that uses elemental metal sources. Phase-pure, epitaxial thin films of Sr2RuO4 are obtained. At high substrate temperatures, growth…
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We report on the growth of epitaxial Sr2RuO4 films using a hybrid molecular beam epitaxy approach in which a volatile precursor containing RuO4 is used to supply ruthenium and oxygen. The use of the precursor overcomes a number of issues encountered in traditional MBE that uses elemental metal sources. Phase-pure, epitaxial thin films of Sr2RuO4 are obtained. At high substrate temperatures, growth proceeds in a layer-by-layer mode with intensity oscillations observed in reflection high-energy electron diffraction. Films are of high structural quality, as documented by x-ray diffraction, atomic force microscopy, and transmission electron microscopy. The method should be suitable for the growth of other complex oxides containing ruthenium, opening up opportunities to investigate thin films that host rich exotic ground states.
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Submitted 4 September, 2017;
originally announced September 2017.
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Disorder versus two transport lifetimes in a strongly correlated electron liquid
Authors:
Patrick B. Marshall,
Honggyu Kim,
Susanne Stemmer
Abstract:
We report on angle-dependent measurements of the sheet resistances and Hall coefficients of electron liquids in SmTiO3/SrTiO3/SmTiO3 quantum well structures, which were grown by molecular beam epitaxy on (001) DyScO3. We compare their transport properties with those of similar structures grown on LSAT [(La0.3Sr0.7)(Al0.65Ta0.35)O3]. On DyScO3, planar defects normal to the quantum wells lead to a s…
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We report on angle-dependent measurements of the sheet resistances and Hall coefficients of electron liquids in SmTiO3/SrTiO3/SmTiO3 quantum well structures, which were grown by molecular beam epitaxy on (001) DyScO3. We compare their transport properties with those of similar structures grown on LSAT [(La0.3Sr0.7)(Al0.65Ta0.35)O3]. On DyScO3, planar defects normal to the quantum wells lead to a strong in-plane anisotropy in the transport properties. This allows for quantifying the role of defects in transport. In particular, we investigate differences in the longitudinal and Hall scattering rates, which is a non-Fermi liquid phenomenon known as lifetime separation. The residuals in both the longitudinal resistance and Hall angle were found to depend on the relative orientations of the transport direction to the planar defects. The Hall angle exhibited a robust T2 temperature dependence along all directions, whereas no simple power law could describe the temperature dependence of the longitudinal resistances. Remarkably, the degree of the carrier lifetime separation, as manifested in the distinctly different temperature dependences and diverging residuals near a critical quantum well thickness, was completely insensitive to disorder. The results allow for a clear distinction between disorder-induced contributions to the transport and intrinsic, non-Fermi liquid phenomena, which includes the lifetime separation.
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Submitted 21 August, 2017;
originally announced August 2017.
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Negative magnetoresistance due to conductivity fluctuations in films of the topological semimetal Cd3As2
Authors:
Timo Schumann,
Manik Goyal,
David A. Kealhofer,
Susanne Stemmer
Abstract:
Recently discovered Dirac and Weyl semimetals display unusual magnetoresistance phenomena, including a large, non-saturating, linear transverse magnetoresistance and a negative longitudinal magnetoresistance. The latter is often considered as evidence of fermions having a defined chirality. Classical mechanisms, due to disorder or non-uniform current injection, can however, also produce negative l…
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Recently discovered Dirac and Weyl semimetals display unusual magnetoresistance phenomena, including a large, non-saturating, linear transverse magnetoresistance and a negative longitudinal magnetoresistance. The latter is often considered as evidence of fermions having a defined chirality. Classical mechanisms, due to disorder or non-uniform current injection, can however, also produce negative longitudinal magnetoresistance. Here, we report on magnetotransport measurements performed on epitaxial thin films of Cd3As2, a three-dimensional Dirac semimetal. Quasi-linear positive transverse magnetoresistance and negative longitudinal magnetoresistance are observed. By evaluating films of different thickness and by correlating the temperature dependence of the carrier density and mobility with the magnetoresistance characteristics, we demonstrate that both the quasi-linear positive and the negative magnetoresistance are caused by conductivity fluctuations. Chiral anomaly is not needed to explain the observed features.
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Submitted 9 June, 2017;
originally announced June 2017.
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Potential Fluctuations at Low Temperatures in Mesoscopic-Scale SmTiO$_{3}$/SrTiO$_{3}$/SmTiO$_{3}$ Quantum Well Structures
Authors:
Will J. Hardy,
Brandon Isaac,
Patrick Marshall,
Evgeny Mikheev,
Panpan Zhou,
Susanne Stemmer,
Douglas Natelson
Abstract:
Heterointerfaces of SrTiO$_{3}$ with other transition metal oxides make up an intriguing family of systems with a bounty of coexisting and competing physical orders. Some examples, such as LaAlO$_{3}$/SrTiO$_{3}$, support a high carrier density electron gas at the interface whose electronic properties are determined by a combination of lattice distortions, spin-orbit coupling, defects, and various…
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Heterointerfaces of SrTiO$_{3}$ with other transition metal oxides make up an intriguing family of systems with a bounty of coexisting and competing physical orders. Some examples, such as LaAlO$_{3}$/SrTiO$_{3}$, support a high carrier density electron gas at the interface whose electronic properties are determined by a combination of lattice distortions, spin-orbit coupling, defects, and various regimes of magnetic and charge ordering. Here, we study electronic transport in mesoscale devices made with heterostructures of SrTiO$_{3}$ sandwiched between layers of SmTiO$_{3}$, in which the transport properties can be tuned from a regime of Fermi-liquid like resistivity ($ρ\sim T^{2}$) to a non-Fermi liquid ($ρ\sim T^{5/3}$) by controlling the SrTiO$_{3}$ thickness. In mesoscale devices at low temperatures, we find unexpected voltage fluctuations that grow in magnitude as $T$ is decreased below 20 K, are suppressed with increasing contact electrode size, and are independent of the drive current and contact spacing distance. Magnetoresistance fluctuations are also observed, which are reminiscent of universal conductance fluctuations but not entirely consistent with their conventional properties. Candidate explanations are considered, and a mechanism is suggested based on mesoscopic temporal fluctuations of the Seebeck coefficient. An improved understanding of charge transport in these model systems, especially their quantum coherent properties, may lead to insights into the nature of transport in strongly correlated materials that deviate from Fermi liquid theory.
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Submitted 19 April, 2017;
originally announced April 2017.
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Dichotomy of the transport coefficients of correlated electron liquids in SrTiO3
Authors:
Tyler A. Cain,
Evgeny Mikheev,
Clayton A. Jackson,
Susanne Stemmer
Abstract:
We discuss the Seebeck coefficient and the Hall mobility of electrons confined in narrow SrTiO3 quantum wells as a function of the three-dimensional carrier density and temperature. The quantum wells contain a fixed sheet carrier density of ~ 7x10^14 cm^-2 and their thickness is varied. At high temperatures, both properties exhibit apparent Fermi liquid behavior. In particular, the Seebeck coeffic…
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We discuss the Seebeck coefficient and the Hall mobility of electrons confined in narrow SrTiO3 quantum wells as a function of the three-dimensional carrier density and temperature. The quantum wells contain a fixed sheet carrier density of ~ 7x10^14 cm^-2 and their thickness is varied. At high temperatures, both properties exhibit apparent Fermi liquid behavior. In particular, the Seebeck coefficient increases nearly linearly with temperature (T) when phonon drag contributions are minimized, while the mobility decreases proportional to T^2. Furthermore, the Seebeck coefficient scales inversely with the Fermi energy (decreasing quantum well thickness). In contrast, the transport scattering rate is independent of the Fermi energy, which is inconsistent with a Fermi liquid. At low temperatures, the Seebeck coefficient deviates from the linear temperature dependence for those electron liquids that exhibit a correlation-induced pseudogap, indicating a change in the energy dependence of the scattering rate. The implications for describing transport in strongly correlated materials are discussed.
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Submitted 14 September, 2016;
originally announced September 2016.
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Interface-driven ferromagnetism within the quantum wells of a rare earth titanate superlattice
Authors:
R. F. Need,
B. J. Isaac,
B. J. Kirby,
J. A. Borchers,
S. Stemmer,
Stephen D. Wilson
Abstract:
Here we present polarized neutron reflectometry measurements exploring thin film heterostructures comprised of a strongly correlated Mott state, GdTiO$_3$, embedded with SrTiO$_3$ quantum wells. Our results reveal that the net ferromagnetism inherent to the Mott GdTiO$_3$ matrix propagates into the nominally nonmagnetic SrTiO$_3$ quantum wells and tracks the magnetic order parameter of the host Mo…
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Here we present polarized neutron reflectometry measurements exploring thin film heterostructures comprised of a strongly correlated Mott state, GdTiO$_3$, embedded with SrTiO$_3$ quantum wells. Our results reveal that the net ferromagnetism inherent to the Mott GdTiO$_3$ matrix propagates into the nominally nonmagnetic SrTiO$_3$ quantum wells and tracks the magnetic order parameter of the host Mott insulating matrix. Beyond a well thickness of 5 SrO layers, the magnetic moment within the wells is dramatically suppressed, suggesting that quenched well magnetism comprises the likely origin of quantum critical magnetotransport in this thin film architecture. Our data demonstrate that the interplay between proximate exchange fields and polarity induced carrier densities can stabilize extended magnetic states within SrTiO$_3$ quantum wells.
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Submitted 5 July, 2016;
originally announced July 2016.
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Large Electron Concentration Modulation using Capacitance Enhancement in SrTiO3/SmTiO3 FinFETs
Authors:
Amit Verma,
Kazuki Nomoto,
Wan Sik Hwang,
Santosh Raghavan,
Susanne Stemmer,
Debdeep Jena
Abstract:
Solid-state modulation of 2-dimensional electron gases (2DEGs) with extreme (~3.3 x 1014 cm-2) densities corresponding to 1/2 electron per interface unit cell at complex oxide heterointerfaces (such as SrTiO3/GdTiO3 or SrTiO3/SmTiO3) is challenging because it requires enormous gate capacitances. One way to achieve large gate capacitances is by geometrical capacitance enhancement in fin structures.…
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Solid-state modulation of 2-dimensional electron gases (2DEGs) with extreme (~3.3 x 1014 cm-2) densities corresponding to 1/2 electron per interface unit cell at complex oxide heterointerfaces (such as SrTiO3/GdTiO3 or SrTiO3/SmTiO3) is challenging because it requires enormous gate capacitances. One way to achieve large gate capacitances is by geometrical capacitance enhancement in fin structures. In this work, we fabricate both Au-gated planar field effect transistors (FETs) and Fin-FETs with varying fin-widths on 60nm SrTiO3/5nm SmTiO3 thin films grown by hybrid molecular beam epitaxy (hMBE). We find that the FinFETs exhibit higher gate capacitance compared to planar FETs. By scaling down the SrTiO3/SmTiO3 fin widths, we demonstrate further gate capacitance enhancement, almost twice compared to the planar FETs. In the FinFETs with narrowest fin-widths, we demonstrate a record 2DEG electron concentration modulation of ~2.4 x 1014 cm-2.
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Submitted 5 May, 2016;
originally announced May 2016.
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Key role of lattice symmetry in the metal-insulator transition of NdNiO3 films
Authors:
Jack Y. Zhang,
Honggyu Kim,
Evgeny Mikheev,
Adam J. Hauser,
Susanne Stemmer
Abstract:
Bulk NdNiO3 exhibits a metal-to-insulator transition (MIT) as the temperature is lowered that is also seen in tensile strained films. In contrast, films that are under a large compressive strain typically remain metallic at all temperatures. To clarify the microscopic origins of this behavior, we use position averaged convergent beam electron diffraction in scanning transmission electron microscop…
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Bulk NdNiO3 exhibits a metal-to-insulator transition (MIT) as the temperature is lowered that is also seen in tensile strained films. In contrast, films that are under a large compressive strain typically remain metallic at all temperatures. To clarify the microscopic origins of this behavior, we use position averaged convergent beam electron diffraction in scanning transmission electron microscopy to characterize strained NdNiO3 films both above and below the MIT temperature. We show that a symmetry lowering structural change takes place in case of the tensile strained film, which undergoes an MIT, but is absent in the compressively strained film. Using space group symmetry arguments, we show that these results support the bond length disproportionation model of the MIT in the rare-earth nickelates. Furthermore, the results provide insights into the non-Fermi liquid phase that is observed in films for which the MIT is absent.
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Submitted 12 March, 2016;
originally announced March 2016.
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Carrier density independent scattering rate in SrTiO3-based electron liquids
Authors:
Evgeny Mikheev,
Santosh Raghavan,
Jack Y. Zhang,
Patrick B. Marshall,
Adam P. Kajdos,
Leon Balents,
Susanne Stemmer
Abstract:
We examine the carrier density dependence of the scattering rate in two- and three-dimensional electron liquids in SrTiO3 in the regime where it scales with T^n (T is the temperature and n <= 2) in the cases when it is varied by electrostatic control and chemical do**, respectively. It is shown that the scattering rate is independent of the carrier density. This is contrary to the expectations f…
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We examine the carrier density dependence of the scattering rate in two- and three-dimensional electron liquids in SrTiO3 in the regime where it scales with T^n (T is the temperature and n <= 2) in the cases when it is varied by electrostatic control and chemical do**, respectively. It is shown that the scattering rate is independent of the carrier density. This is contrary to the expectations from Landau Fermi liquid theory, where the scattering rate scales inversely with the Fermi energy (E_F). We discuss that the behavior is very similar to systems traditionally identified as non-Fermi liquids (n < 2). This includes the cuprates and other transition metal oxide perovskites, where strikingly similar density-independent scattering rates have been observed. The results indicate that the applicability of Fermi liquid theory should be questioned for a much broader range of correlated materials and point to the need for a unified theory.
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Submitted 7 December, 2015;
originally announced December 2015.
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Ferroelectric Transition in Compressively Strained SrTiO3 Thin Films
Authors:
Amit Verma,
Santosh Raghavan,
Susanne Stemmer,
Debdeep Jena
Abstract:
We report the temperature dependent capacitance-voltage characteristics of Pt/SrTiO3 Schottky diodes fabricated using compressively strained SrTiO3 thin films grown on (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) substrates. The measurements reveal a divergence of the out of plane dielectric constant of SrTiO3 peaked at ~140K, implying a ferroelectric transition. A Curie-Weiss law fit to the zero-bias dielect…
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We report the temperature dependent capacitance-voltage characteristics of Pt/SrTiO3 Schottky diodes fabricated using compressively strained SrTiO3 thin films grown on (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) substrates. The measurements reveal a divergence of the out of plane dielectric constant of SrTiO3 peaked at ~140K, implying a ferroelectric transition. A Curie-Weiss law fit to the zero-bias dielectric constant suggests a Curie temperature of ~56 K. This observation provides experimental confirmation of the theoretical prediction of out of plane ferroelectricity in compressively strained SrTiO3 thin films grown on LSAT substrate. We also discuss the roles of the field-dependent dielectric constant and the interfacial layer in SrTiO3 on the extraction of the Curie temperature.
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Submitted 6 November, 2015;
originally announced November 2015.
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Depth-Resolved Composition and Electronic Structure of Buried Layers and Interfaces in a LaNiO$_3$/SrTiO$_3$ Superlattice from Soft- and Hard- X-ray Standing-Wave Angle-Resolved Photoemission
Authors:
D. Eiteneer,
G. K. Pálsson,
S. Nemšák,
A. X. Gray,
A. M. Kaiser,
J. Son,
J. LeBeau,
G. Conti,
A. A. Greer,
A. Keqi,
A. Rattanachata,
A. Y. Saw,
A. Bostwick,
E. Rotenberg,
E. M. Gullikson,
S. Ueda,
K. Kobayashi,
A. Janotti,
C. G. Van de Walle,
A. Blanca-Romero,
R. Pentcheva,
C. M. Schneider,
S. Stemmer,
C. S. Fadley
Abstract:
LaNiO$_3$ (LNO) is an intriguing member of the rare-earth nickelates in exhibiting a metal-insulator transition for a critical film thickness of about 4 unit cells [Son et al., Appl. Phys. Lett. 96, 062114 (2010)]; however, such thin films also show a transition to a metallic state in superlattices with SrTiO$_3$ (STO) [Son et al., Appl. Phys. Lett. 97, 202109 (2010)]. In order to better understan…
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LaNiO$_3$ (LNO) is an intriguing member of the rare-earth nickelates in exhibiting a metal-insulator transition for a critical film thickness of about 4 unit cells [Son et al., Appl. Phys. Lett. 96, 062114 (2010)]; however, such thin films also show a transition to a metallic state in superlattices with SrTiO$_3$ (STO) [Son et al., Appl. Phys. Lett. 97, 202109 (2010)]. In order to better understand this transition, we have studied a strained LNO/STO superlattice with 10 repeats of [4 unit-cell LNO/3 unit-cell STO] grown on an (LaAlO$_3$)$_{0.3}$(Sr$_2$AlTaO$_6$)$_{0.7}$ substrate using soft x-ray standing-wave-excited angle-resolved photoemission (SWARPES), together with soft- and hard- x-ray photoemission measurements of core levels and densities-of-states valence spectra. The experimental results are compared with state-of-the-art density functional theory (DFT) calculations of band structures and densities of states. Using core-level rocking curves and x-ray optical modeling to assess the position of the standing wave, SWARPES measurements are carried out for various incidence angles and used to determine interface-specific changes in momentum-resolved electronic structure. We further show that the momentum-resolved behavior of the Ni 3d eg and t2g states near the Fermi level, as well as those at the bottom of the valence bands, is very similar to recently published SWARPES results for a related La$_{0.7}$Sr$_{0.3}$MnO$_3$/SrTiO$_3$ superlattice that was studied using the same technique (Gray et al., Europhysics Letters 104, 17004 (2013)), which further validates this experimental approach and our conclusions. Our conclusions are also supported in several ways by comparison to DFT calculations for the parent materials and the superlattice, including layer-resolved density-of-states results.
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Submitted 27 May, 2016; v1 submitted 22 October, 2015;
originally announced October 2015.
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Observation by resonant angle-resolved photoemission of a critical thickness for 2-dimensional electron gas formation in SrTiO$_3$ embedded in GdTiO$_3$
Authors:
S. Nemšák,
G. Conti,
G. K. Pálsson,
C. Conlon,
S. Cho,
J. Rault,
J. Avila,
M. -C. Asensio,
C. Jackson,
P. Moetakef,
A. Janotti,
L. Bjaalie,
B. Himmetoglu,
C. G. Van de Walle,
L. Balents,
C. M. Schneider,
S. Stemmer,
C. S. Fadley`
Abstract:
For certain conditions of layer thickness, the interface between GdTiO$_3$ (GTO) and SrTiO$_3$ (STO) in multilayer samples has been found to form a two-dimensional electron gas (2DEG) with very interesting properties including high mobilities and ferromagnetism. We have here studied two trilayer samples of the form [2 nm GTO/1.0 or 1.5 unit cells STO/10 nm GTO] as grown on (001) (LaAlO$_3$)…
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For certain conditions of layer thickness, the interface between GdTiO$_3$ (GTO) and SrTiO$_3$ (STO) in multilayer samples has been found to form a two-dimensional electron gas (2DEG) with very interesting properties including high mobilities and ferromagnetism. We have here studied two trilayer samples of the form [2 nm GTO/1.0 or 1.5 unit cells STO/10 nm GTO] as grown on (001) (LaAlO$_3$)$_{0.3}$(Sr$_2$AlTaO$_6$)$_{0.7}$ (LSAT), with the STO layer thicknesses being at what has been suggested is the critical thickness for 2DEG formation. We have studied these with Ti-resonant angle-resolved (ARPES) and angle-integrated photoemission and find that the spectral feature in the spectra associated with the 2DEG is present in the 1.5 unit cell sample, but not in the 1.0 unit cell sample. We also observe through core-level spectra additional states in Ti and Sr, with the strength of a low-binding-energy state for Sr being associated with the appearance of the 2DEG, and we suggest it to have an origin in final-state core-hole screening.
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Submitted 20 November, 2015; v1 submitted 13 August, 2015;
originally announced August 2015.
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Energetic, spatial and momentum character of a buried interface: the two-dimensional electron gas between two metal oxides
Authors:
S. Nemšák,
G. Conti,
A. X. Gray,
G. K. Pálsson,
C. Conlon,
D. Eiteneer,
A. Keqi,
A. Rattanachata,
A. Y. Saw,
A. Bostwick,
L. Moreschini,
V. Strocov,
M. Kobayashi,
W. Stolte,
S. Ueda,
K. Kobayashi,
A. Gloskovskii,
W. Drube,
C. Jackson,
P. Moetakef,
A. Janotti,
L. Bjaalie,
B. Himmetoglu,
C. G. Van de Walle,
S. Borek
, et al. (10 additional authors not shown)
Abstract:
The interfaces between two condensed phases often exhibit emergent physical properties that can lead to new physics and novel device applications, and are the subject of intense study in many disciplines. We here apply novel experimental and theoretical techniques to the characterization of one such interesting interface system: the two-dimensional electron gas (2DEG) formed in multilayers consist…
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The interfaces between two condensed phases often exhibit emergent physical properties that can lead to new physics and novel device applications, and are the subject of intense study in many disciplines. We here apply novel experimental and theoretical techniques to the characterization of one such interesting interface system: the two-dimensional electron gas (2DEG) formed in multilayers consisting of SrTiO$_3$ (STO) and GdTiO$_3$ (GTO). This system has been the subject of multiple studies recently and shown to exhibit very high carrier charge densities and ferromagnetic effects, among other intriguing properties. We have studied a 2DEG-forming multilayer of the form [6 unit cells STO/3 unit cells of GTO]$_{20}$ using a unique array of photoemission techniques including soft and hard x-ray excitation, soft x-ray angle-resolved photoemission, core-level spectroscopy, resonant excitation, and standing-wave effects, as well as theoretical calculations of the electronic structure at several levels and of the actual photoemission process. Standing-wave measurements below and above a strong resonance have been introduced as a powerful method for studying the 2DEG depth distribution. We have thus characterized the spatial and momentum properties of this 2DEG with unprecedented detail, determining via depth-distribution measurements that it is spread throughout the 6 u.c. layer of STO, and measuring the momentum dispersion of its states. The experimental results are supported in several ways by theory, leading to a much more complete picture of the nature of this 2DEG, and suggesting that oxygen vacancies are not the origin of it. Similar multi-technique photoemission studies of such states at buried interfaces, combined with comparable theory, will be a very fruitful future approach for exploring and modifying the fascinating world of buried-interface physics and chemistry.
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Submitted 9 March, 2016; v1 submitted 7 August, 2015;
originally announced August 2015.