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Magnetic and electronic phases of U$_\mathbf{2}$Rh$_\mathbf{3}$Si$_\mathbf{5}$
Authors:
J. Willwater,
N. Steinki,
R. Reuter,
D. Menzel,
H. Amitsuka,
V. Sechovsky,
M. Valiska,
M. Jaime,
F. Weickert,
S. Süllow
Abstract:
We present a detailed study of the magnetic and electronic properties of U$_2$Rh$_3$Si$_5$, a material that has been demonstrated to exhibit a first order antiferromagnetic phase transition. From a high magnetic field study, together with extensive experiments in moderate fields, we establish the magnetic phase diagrams for all crystallographic directions. The possibility of an electronic phase in…
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We present a detailed study of the magnetic and electronic properties of U$_2$Rh$_3$Si$_5$, a material that has been demonstrated to exhibit a first order antiferromagnetic phase transition. From a high magnetic field study, together with extensive experiments in moderate fields, we establish the magnetic phase diagrams for all crystallographic directions. The possibility of an electronic phase in a narrow interval above the Néel temperature as a precursor of a magnetic phase is discussed.
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Submitted 22 December, 2020; v1 submitted 29 October, 2020;
originally announced October 2020.
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Electronic transport in high magnetic fields of thin film MnSi
Authors:
Nico Steinki,
David Schroeter,
Niels Wächter,
Dirk Menzel,
Hans Werner Schumacher,
Ilya Sheikin,
Stefan Süllow
Abstract:
We present a study of the magnetoresistivity of thin film MnSi in high magnetic fields. We establish that the magnetoresistivity can be understood in terms of spin fluctuation theory, allowing us to compare our data to studies of bulk material. Despite of a close qualitative resemblance of bulk and thin film data, there are clear quantitative differences. We propose that these reflect a difference…
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We present a study of the magnetoresistivity of thin film MnSi in high magnetic fields. We establish that the magnetoresistivity can be understood in terms of spin fluctuation theory, allowing us to compare our data to studies of bulk material. Despite of a close qualitative resemblance of bulk and thin film data, there are clear quantitative differences. We propose that these reflect a difference of the spin fluctuation spectra in thin film and bulk material MnSi.
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Submitted 26 June, 2018; v1 submitted 20 June, 2018;
originally announced June 2018.
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MnSi-nanostructures obtained from thin films: magnetotransport and Hall effect
Authors:
D. Schroeter,
N. Steinki,
M. Schilling,
A. Fernández Scarioni,
P. Krzysteczko,
T. Dziomba,
H. W. Schumacher,
D. Menzel,
S. Süllow
Abstract:
We present a comparative study of the (magneto)transport properties, including Hall effect, of bulk, thin film and nanostructured MnSi. In order to set our results in relation to published data we extensively characterize our materials, this way establishing a comparatively good sample quality. Our analysis reveals that in particular for thin film and nanostructured material, there are extrinsic a…
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We present a comparative study of the (magneto)transport properties, including Hall effect, of bulk, thin film and nanostructured MnSi. In order to set our results in relation to published data we extensively characterize our materials, this way establishing a comparatively good sample quality. Our analysis reveals that in particular for thin film and nanostructured material, there are extrinsic and intrinsic contributions to the electronic transport properties, which by modeling the data we separate out. Finally, we discuss our Hall effect data of nanostructured MnSi under consideration of the extrinsic contributions and with respect to the question of the detection of a topological Hall effect in a skyrmionic phase.
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Submitted 5 February, 2018; v1 submitted 13 June, 2017;
originally announced June 2017.
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Field induced Lifshitz transition in UPt$_2$Si$_2$: Fermi surface under extreme conditions
Authors:
D. Schulze Grachtrup,
N. Steinki,
S. Süllow,
Z. Cakir,
G. Zwicknagl,
Y. Krupko,
I. Sheikin,
M. Jaime,
J. A. Mydosh
Abstract:
We have measured Hall effect, magnetotransport and magnetostriction on the field induced phases of single crystalline UPt$_2$Si$_2$ in magnetic fields up to 60\,T at temperatures down to 50\,mK. For the magnetic field applied along the $c$ axis we observe strong changes in the Hall effect at the phase boundaries. From a comparison to band structure calculations utilizing the concept of a dual natu…
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We have measured Hall effect, magnetotransport and magnetostriction on the field induced phases of single crystalline UPt$_2$Si$_2$ in magnetic fields up to 60\,T at temperatures down to 50\,mK. For the magnetic field applied along the $c$ axis we observe strong changes in the Hall effect at the phase boundaries. From a comparison to band structure calculations utilizing the concept of a dual nature of the uranium 5$f$ electrons, we find evidence for field induced topological changes of the Fermi surface due to at least one Lifshitz transition. Furthermore, we find a unique history dependence of the magnetotransport and magnetostriction data, indicating that the Lifshitz type transition is of a discontinuous nature, as predicted for interacting electron systems.
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Submitted 6 March, 2017; v1 submitted 4 October, 2016;
originally announced October 2016.
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Electronic ground state of MnB$_{4}$
Authors:
N. Steinki,
J. L. Winter,
D. Schulze Grachtrup,
D. Menzel,
S. Süllow,
A. Knappschneider,
B. Albert
Abstract:
Recent studies have dealt with the electronic and magnetic ground state properties of the tetraboride material MnB$_4$. So far, however, the ground state properties could not be established unambiguously. Therefore, here we present an experimental study on single-crystalline MnB$_4$ by means of resistivity and magnetization measurements. For this, we have developed a sample holder that allows four…
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Recent studies have dealt with the electronic and magnetic ground state properties of the tetraboride material MnB$_4$. So far, however, the ground state properties could not be established unambiguously. Therefore, here we present an experimental study on single-crystalline MnB$_4$ by means of resistivity and magnetization measurements. For this, we have developed a sample holder that allows four-point ac resistivity measurements on these very small ($\sim$\,100\,$μ$m) samples. With our data we establish that the electronic ground state of MnB$_4$ is intrinsically that of a pseudo-gap system, in agreement with recent band structure calculations. Furthermore, we demonstrate that the material does neither show magnetic order nor a behavior arising from the vicinity to a magnetically ordered state, this way disproving previous claims.
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Submitted 31 October, 2016; v1 submitted 17 June, 2016;
originally announced June 2016.
