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Resonant two-laser spin-state spectroscopy of a negatively charged quantum dot-microcavity system with a cold permanent magnet
Authors:
P. Steindl,
T. van der Ent,
H. van der Meer,
J. A. Frey,
J. Norman,
J. E. Bowers,
D. Bouwmeester,
W. Löffler
Abstract:
A high-efficiency spin-photon interface is an essential piece of quantum hardware necessary for various quantum technologies. Self-assembled InGaAs quantum dots have excellent optical properties, if embedded into an optical micro-cavity they can show near-deterministic spin-photon entanglement and spin readout, but an external magnetic field is required to address the individual spin states, which…
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A high-efficiency spin-photon interface is an essential piece of quantum hardware necessary for various quantum technologies. Self-assembled InGaAs quantum dots have excellent optical properties, if embedded into an optical micro-cavity they can show near-deterministic spin-photon entanglement and spin readout, but an external magnetic field is required to address the individual spin states, which usually is done using a superconducting magnet. Here, we show a compact cryogenically compatible SmCo magnet design that delivers 475 mT in-plane Voigt geometry magnetic field at 5 K, which is suitable to lift the energy degeneracy of the electron spin states and trion transitions of a single InGaAs quantum dot. This quantum dot is embedded in a birefringent high-finesse optical micro-cavity which enables efficient collection of single photons emitted by the quantum dot. We demonstrate spin-state manipulation by addressing the trion transitions with a single and two laser fields. The experimental data agrees well to our model which covers single- and two-laser cross-polarized resonance fluorescence, Purcell enhancement in a birefringent cavity, and variation of the laser powers.
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Submitted 5 March, 2023;
originally announced March 2023.
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Cross-polarization extinction enhancement and spin-orbit coupling of light for quantum-dot cavity-QED spectroscopy
Authors:
P. Steindl,
J. A. Frey,
J. Norman,
J. E. Bowers,
D. Bouwmeester,
W. Löffler
Abstract:
Resonant laser spectroscopy is essential for the characterization, operation, and manipulation of single quantum systems such as semiconductor quantum dots. The separation of the weak resonance fluorescence from the excitation laser is key for high-quality single- and entangled photon sources. This is often achieved by cross-polarization laser extinction, which is limited by the quality of the opt…
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Resonant laser spectroscopy is essential for the characterization, operation, and manipulation of single quantum systems such as semiconductor quantum dots. The separation of the weak resonance fluorescence from the excitation laser is key for high-quality single- and entangled photon sources. This is often achieved by cross-polarization laser extinction, which is limited by the quality of the optical elements. Recently, it was discovered that Fresnel-reflection birefringence in combination with single-mode filtering counteracting spin-orbit coupling effects enables a three-order of magnitude improvement of polarization extinction [PRX 11, 021007 (2021)]. Here, we first investigate multiple reflections and analyze beam resha**, and observe that the single-reflection extinction enhancement is optimal. We then demonstrate this method for cross-polarization extinction enhancement for a resonantly excited semiconductor quantum dot in a birefringent optical micro cavity, and observe a 10x improvement of single-photon contrast.
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Submitted 10 February, 2023;
originally announced February 2023.
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On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP(001)
Authors:
Petr Steindl,
Elisa Maddalena Sala,
Benito Alén,
Dieter Bimberg,
Petr Klenovský
Abstract:
Understanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (QDs) by means of non-resonant energy and temperature modulated time-resolved photoluminescence. Studying this material system is important in view of the ongoing implem…
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Understanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (QDs) by means of non-resonant energy and temperature modulated time-resolved photoluminescence. Studying this material system is important in view of the ongoing implementation of such QDs for nano memory devices. Our set of structures contains a single QD layer, QDs overgrown by a GaSb cap** layer, and solely a GaAs quantum well, respectively. Theoretical analytical models allow us to discern the common spectral features around the emission energy of 1.8 eV related to GaAs quantum well and GaP substrate. We observe type-I emission from QDs with recombination times between 2 ns and 10 ns, increasing towards lower energies. The distribution suggests the coexistence of momentum direct and indirect QD transitions. Moreover, based on the considerable tunability of the dots depending on Sb incorporation, we suggest their utilization as quantum photonic sources embedded in complementary metal-oxide-semiconductor (CMOS) platforms, since GaP is almost lattice-matched to Si. Finally, our analysis confirms the nature of the pum** power blue-shift of emission originating from the charged-background induced changes of the wavefunction topology.
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Submitted 15 January, 2021;
originally announced January 2021.
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Artificial coherent states of light by multi-photon interference in a single-photon stream
Authors:
P. Steindl,
H. Snijders,
G. Westra,
E. Hissink,
K. Iakovlev,
S. Polla,
J. A. Frey,
J. Norman,
A. C. Gossard,
J. E. Bowers,
D. Bouwmeester,
W. Löffler
Abstract:
Coherent optical states consist of a quantum superposition of different photon number (Fock) states, but because they do not form an orthogonal basis, no photon number states can be obtained from it by linear optics. Here we demonstrate the reverse, by manipulating a random continuous single-photon stream using quantum interference in an optical Sagnac loop, we create engineered quantum states of…
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Coherent optical states consist of a quantum superposition of different photon number (Fock) states, but because they do not form an orthogonal basis, no photon number states can be obtained from it by linear optics. Here we demonstrate the reverse, by manipulating a random continuous single-photon stream using quantum interference in an optical Sagnac loop, we create engineered quantum states of light with tunable photon statistics, including approximate weak coherent states. We demonstrate this experimentally using a true single-photon stream produced by a semiconductor quantum dot in an optical microcavity, and show that we can obtain light with $g^{(2)}(0)\rightarrow1$ in agreement with our theory, which can only be explained by quantum interference of at least 3 photons. The produced artificial light states are, however, much more complex than coherent states, containing quantum entanglement of photons, making them a resource for multi-photon entanglement.
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Submitted 11 April, 2021; v1 submitted 29 October, 2020;
originally announced October 2020.
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Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix
Authors:
Petr Steindl,
Elisa Maddalena Sala,
Benito Alén,
David Fuertes Marrón,
Dieter Bimberg,
Petr Klenovský
Abstract:
The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001) substrates is studied by means of excitation and temperature-dependent photoluminescence (PL), and it is related to their complex electronic structure. Such QDs exhibit concurrently direct and indirect transitions, which allows the swap** of $Γ$ and $L$ quantum confined states in energy, depending on details of their…
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The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001) substrates is studied by means of excitation and temperature-dependent photoluminescence (PL), and it is related to their complex electronic structure. Such QDs exhibit concurrently direct and indirect transitions, which allows the swap** of $Γ$ and $L$ quantum confined states in energy, depending on details of their stoichiometry. Based on realistic data on QD structure and composition, derived from high-resolution transmission electron microscopy (HRTEM) measurements, simulations by means of $\mathbf{k\cdot p}$ theory are performed. The theoretical prediction of both momentum direct and indirect type-I optical transitions are confirmed by the experiments presented here. Additional investigations by a combination of Raman and photoreflectance spectroscopy show modifications of the hydrostatic strain in the QD layer, depending on the sequential addition of QDs and cap** layer. A variation of the excitation density across four orders of magnitude reveals a 50 meV energy blueshift of the QD emission. Our findings suggest that the assignment of the type of transition, based solely by the observation of a blueshift with increased pum**, is insufficient. We propose therefore a more consistent approach based on the analysis of the character of the blueshift evolution with optical pum**, which employs a numerical model based on a semi-self-consistent configuration interaction method.
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Submitted 10 September, 2019; v1 submitted 24 June, 2019;
originally announced June 2019.
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Effect of second order piezoelectricity on excitonic structure of stress-tuned InGaAs/GaAs quantum dots
Authors:
Petr Klenovský,
Petr Steindl,
Johannes Aberl,
Eugenio Zallo,
Rinaldo Trotta,
Armando Rastelli,
Thomas Fromherz
Abstract:
We study the effects of the nonlinear piezoelectricity and the In distribution on the exciton energy, the electron-hole electric dipole moment, and the fine-structure splitting in stress-tunable InGaAs/GaAs quantum dots integrated onto a piezoelectric actuator. In particular, we investigate in detail the contributions of various elements of the expansion of the electrical polarization in terms of…
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We study the effects of the nonlinear piezoelectricity and the In distribution on the exciton energy, the electron-hole electric dipole moment, and the fine-structure splitting in stress-tunable InGaAs/GaAs quantum dots integrated onto a piezoelectric actuator. In particular, we investigate in detail the contributions of various elements of the expansion of the electrical polarization in terms of externally induced elastic strain on the latter two important quantum dot properties. Based on the comparison of the effects of first- and second-order piezoelectricity we provide a simple relation to estimate the influence of applied anisotropic stress on the quantum dot dipole moment for quantum dots significantly lattice mismatched to the host crystal.
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Submitted 10 October, 2018; v1 submitted 17 May, 2018;
originally announced May 2018.
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Polarization anisotropy of the emission from type-II quantum dots
Authors:
P. Klenovsky,
D. Hemzal,
P. Steindl,
M. Zikova,
V. Krapek,
J. Humlicek
Abstract:
We study the polarization response of the emission from type-II GaAsSb capped InAs quantum dots. The theoretical prediction based on the calculations of the overlap integrals of the single-particle states obtained in the k.p framework is given. This is verified experimentally by polarization resolved photoluminescence measurements on samples with the type-II confinement. We show that the polarizat…
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We study the polarization response of the emission from type-II GaAsSb capped InAs quantum dots. The theoretical prediction based on the calculations of the overlap integrals of the single-particle states obtained in the k.p framework is given. This is verified experimentally by polarization resolved photoluminescence measurements on samples with the type-II confinement. We show that the polarization anisotropy might be utilized to find the vertical position of the hole wavefunction and its orientation with respect to crystallographic axes of the sample. A proposition for usage in the information technology as a room temperature photonic gate operating at the communication wavelengths as well as a simple model to estimate the energy of fine-structure splitting for type-II GaAsSb capped InAs QDs are given.
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Submitted 12 December, 2016;
originally announced December 2016.
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Excitonic structure and pum** power dependent emission blue-shift of type-II quantum dots
Authors:
Petr Klenovský,
Petr Steindl,
Dominique Geffroy
Abstract:
In this work we study theoretically and experimentally the multi-particle structure of the so-called type-II quantum dots with spatially separated electrons and holes. Our calculations based on customarily developed full configuration interaction approach reveal that exciton complexes containing holes interacting with two or more electrons exhibit fairly large antibinding energies. This effect is…
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In this work we study theoretically and experimentally the multi-particle structure of the so-called type-II quantum dots with spatially separated electrons and holes. Our calculations based on customarily developed full configuration interaction approach reveal that exciton complexes containing holes interacting with two or more electrons exhibit fairly large antibinding energies. This effect is found to be the hallmark of the type-II confinement. In addition, an approximate self-consistent solution of the multi-exciton problem allows us to explain two pronounced phenomena: the blue-shift of the emission with pum** and the large inhomogenous spectral broadening, both of those eluding explanation so far. The results are confirmed by detailed intensity and polarization resolved photoluminescence measurements on a number of type-II samples.
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Submitted 7 December, 2016;
originally announced December 2016.
