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A proximitized quantum dot in germanium
Authors:
Lazar Lakic,
William I. L. Lawrie,
David van Driel,
Lucas E. A. Stehouwer,
Menno Veldhorst,
Giordano Scappucci,
Ferdinand Kuemmeth,
Anasua Chatterjee
Abstract:
Planar germanium quantum wells have recently been shown to host a hard-gapped superconductor-semiconductor interface. Additionally, quantum dot spin qubits in germanium are well-suited for quantum information processing, with isotopic purification to a nuclear spin-free material expected to yield long coherence times. Therefore, as one of the few group IV materials with the potential to host super…
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Planar germanium quantum wells have recently been shown to host a hard-gapped superconductor-semiconductor interface. Additionally, quantum dot spin qubits in germanium are well-suited for quantum information processing, with isotopic purification to a nuclear spin-free material expected to yield long coherence times. Therefore, as one of the few group IV materials with the potential to host superconductor-semiconductor hybrid devices, proximitized quantum dots in germanium are a crucial ingredient towards topological superconductivity and novel qubit modalities. Here we demonstrate a quantum dot (QD) in a Ge/SiGe heterostructure proximitized by a platinum germanosilicide (PtGeSi) superconducting lead (SC), forming a SC-QD-SC junction. We show tunability of the QD-SC coupling strength, as well as gate control of the ratio of charging energy and the induced gap. We further exploit this tunability by exhibiting control of the ground state of the system between even and odd parity. Furthermore, we characterize the critical magnetic field strengths, finding a robust critical out-of-plane field of 0.91(5) T. Finally we explore sub-gap spin splitting in the device, observing rich physics in the resulting spectra, that we model using a zero-bandwidth model in the Yu-Shiba-Rusinov limit. The demonstration of controllable proximitization at the nanoscale of a germanium quantum dot opens up the physics of novel spin and superconducting qubits, and Josephson junction arrays in a group IV material.
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Submitted 9 May, 2024; v1 submitted 3 May, 2024;
originally announced May 2024.
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Passive and active suppression of transduced noise in silicon spin qubits
Authors:
Jaemin Park,
Hyeongyu Jang,
Hanseo Sohn,
Jonginn Yun,
Younguk Song,
Byungwoo Kang,
Lucas E. A. Stehouwer,
Davide Degli Esposti,
Giordano Scappucci,
Dohun Kim
Abstract:
Addressing and mitigating decoherence sources plays an essential role in the development of a scalable quantum computing system, which requires low gate errors to be consistently maintained throughout the circuit execution. While nuclear spin-free materials, such as isotopically purified silicon, exhibit intrinsically promising coherence properties for electron spin qubits, the omnipresent charge…
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Addressing and mitigating decoherence sources plays an essential role in the development of a scalable quantum computing system, which requires low gate errors to be consistently maintained throughout the circuit execution. While nuclear spin-free materials, such as isotopically purified silicon, exhibit intrinsically promising coherence properties for electron spin qubits, the omnipresent charge noise, when converted to magnetic noise under a strong magnetic field gradient, often hinders stable qubit operation within a time frame comparable to the data acquisition time. Here, we demonstrate both open- and closed-loop suppression techniques for the transduced noise in silicon spin qubits, resulting in a more than two-fold (ten-fold) improvement of the inhomogeneous coherence time (Rabi oscillation quality) that leads to a single-qubit gate fidelity of over 99.6% even in the presence of a strong decoherence field gradient. Utilizing gate set tomography, we show that adaptive qubit control also reduces the non-Markovian noise in the system, which validates the stability of the gate fidelity. The technique can be used to learn multiple Hamiltonian parameters and is useful for the intermittent calibration of the circuit parameters with affordable experimental overhead, providing a useful subroutine during the repeated execution of general quantum circuits.
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Submitted 5 March, 2024;
originally announced March 2024.
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The categorical spin-statistics theorem
Authors:
Luuk Stehouwer
Abstract:
We establish the spin-statistics theorem for topological quantum field theories (TQFTs) in the framework of Atiyah. We incorporate spin via spin structures on bordisms, and represent statistics using super vector spaces. Unitarity is implemented using dagger categories, in a manner that is equivalent to the approach of Freed-Hopkins, who employed $\mathbb{Z}/2$-equivariant functors to address refl…
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We establish the spin-statistics theorem for topological quantum field theories (TQFTs) in the framework of Atiyah. We incorporate spin via spin structures on bordisms, and represent statistics using super vector spaces. Unitarity is implemented using dagger categories, in a manner that is equivalent to the approach of Freed-Hopkins, who employed $\mathbb{Z}/2$-equivariant functors to address reflection-positivity. A key contribution of our work is the introduction of the notion of fermionically dagger compact categories, which extends the well-established concept of dagger compact categories. We show that both the spin bordism category and the category of super Hilbert spaces are examples of fermionically dagger compact categories. The spin-statistics theorem for TQFTs emerges as a specific case of a more general result concerning symmetric monoidal dagger functors between fermionically dagger compact categories.
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Submitted 4 March, 2024;
originally announced March 2024.
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Dagger $n$-categories
Authors:
Giovanni Ferrer,
Brett Hungar,
Theo Johnson-Freyd,
Cameron Krulewski,
Lukas Müller,
Nivedita,
David Penneys,
David Reutter,
Claudia Scheimbauer,
Luuk Stehouwer,
Chetan Vuppulury
Abstract:
We present a coherent definition of dagger $(\infty,n)$-category in terms of equivariance data trivialized on parts of the category. Our main example is the bordism higher category $\mathbf{Bord}_{n}^X$. This allows us to define a reflection-positive topological quantum field theory to be a higher dagger functor from $\mathbf{Bord}_{n}^X$ to some target higher dagger category $\mathcal{C}$. Our de…
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We present a coherent definition of dagger $(\infty,n)$-category in terms of equivariance data trivialized on parts of the category. Our main example is the bordism higher category $\mathbf{Bord}_{n}^X$. This allows us to define a reflection-positive topological quantum field theory to be a higher dagger functor from $\mathbf{Bord}_{n}^X$ to some target higher dagger category $\mathcal{C}$. Our definitions have a tunable parameter: a group $G$ acting on the $(\infty,1)$-category $\mathbf{Cat}_{(\infty,n)}$ of $(\infty,n)$-categories. Different choices for $G$ accommodate different flavours of higher dagger structure; the universal choice is $G = \operatorname{Aut}(\mathbf{Cat}_{(\infty,n)}) = (\mathbb{Z}/2\mathbb{Z})^n$, which implements dagger involutions on all levels of morphisms. The Stratified Cobordism Hypothesis suggests that there should be a map $\mathrm{PL}(n) \to \operatorname{Aut}(\mathbf{AdjCat}_{(\infty,n)})$, where $\mathrm{PL}(n)$ is the group of piecewise-linear automorphisms of $\mathbb{R}^n$ and $\mathbf{AdjCat}_{(\infty,n)}$ the $(\infty,1)$-category of $(\infty,n)$-categories with all adjoints; we conjecture more strongly that $\operatorname{Aut}(\mathbf{AdjCat}_{(\infty,n)}) \cong \mathrm{PL}(n)$. Based on this conjecture we propose a notion of dagger $(\infty,n)$-category with unitary duality or $\mathrm{PL}(n)$-dagger category. We outline how to construct a $\mathrm{PL}(n)$-dagger structure on the fully-extended bordism $(\infty,n)$-category $\mathbf{Bord}_n^X$ for any stable tangential structure $X$; our outline restricts to a rigorous construction of a coherent dagger structure on the unextended bordism $(\infty,1)$-category $\mathbf{Bord}_{n,n-1}^X$. The article is a report on the results of a workshop held in Summer 2023, and is intended as a sketch of the big picture and an invitation for more thorough development.
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Submitted 23 April, 2024; v1 submitted 3 March, 2024;
originally announced March 2024.
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Operating semiconductor quantum processors with hop** spins
Authors:
Chien-An Wang,
Valentin John,
Hanifa Tidjani,
Cécile X. Yu,
Alexander Ivlev,
Corentin Déprez,
Floor van Riggelen-Doelman,
Benjamin D. Woods,
Nico W. Hendrickx,
Will I. L. Lawrie,
Lucas E. A. Stehouwer,
Stefan Oosterhout,
Amir Sammak,
Mark Friesen,
Giordano Scappucci,
Sander L. de Snoo,
Maximilian Rimbach-Russ,
Francesco Borsoi,
Menno Veldhorst
Abstract:
Qubits that can be efficiently controlled are pivotal in the development of scalable quantum hardware. Resonant control is commonly embraced to execute high-fidelity quantum gates but demands integration of high-frequency oscillating signals and results in qubit crosstalk and heating. Establishing quantum control based on discrete signals could therefore result in a paradigm shift. This may be acc…
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Qubits that can be efficiently controlled are pivotal in the development of scalable quantum hardware. Resonant control is commonly embraced to execute high-fidelity quantum gates but demands integration of high-frequency oscillating signals and results in qubit crosstalk and heating. Establishing quantum control based on discrete signals could therefore result in a paradigm shift. This may be accomplished with single-spin semiconductor qubits, if one can engineer hop** spins between quantum dots with site-dependent spin quantization axis. Here, we introduce hop**-based universal quantum logic and obtain single-qubit gate fidelities of 99.97%, coherent shuttling fidelities of 99.992%, and two-qubit gates fidelities of 99.3%, corresponding to error rates that have been predicted to allow for quantum error correction. We demonstrate that hop** spins also constitute an elegant tuning method by statistically map** the coherence of a 10-quantum dot system. These results motivate dense quantum dot arrays with sparse occupation for efficient and high-connectivity qubit registers.
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Submitted 28 February, 2024;
originally announced February 2024.
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Gate modulation of the hole singlet-triplet qubit frequency in germanium
Authors:
John Rooney,
Zhentao Luo,
Lucas E. A. Stehouwer,
Giordano Scappucci,
Menno Veldhorst,
Hong-Wen Jiang
Abstract:
Spin qubits in germanium gate-defined quantum dots have made considerable progress within the last few years, partially due to their strong spin-orbit coupling and site-dependent $g$-tensors. While this characteristic of the $g$-factors removes the need for micromagnets and allows for the possibility of all-electric qubit control, relying on these $g$-tensors necessitates the need to understand th…
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Spin qubits in germanium gate-defined quantum dots have made considerable progress within the last few years, partially due to their strong spin-orbit coupling and site-dependent $g$-tensors. While this characteristic of the $g$-factors removes the need for micromagnets and allows for the possibility of all-electric qubit control, relying on these $g$-tensors necessitates the need to understand their sensitivity to the confinement potential that defines the quantum dots. Here, we demonstrate a $S-T\_$ qubit whose frequency is a strong function of the voltage applied to the barrier gate shared by the quantum dots. We find a $g$-factor that can be approximately increased by an order of magnitude adjusting the barrier gate voltage only by 12 mV. We attribute the strong dependence to a variable strain profile in our device. This work not only reinforces previous findings that site-dependent $g$-tensors in germanium can be utilized for qubit manipulation, but reveals the sensitivity and tunability these $g$-tensors have to the electrostatic confinement of the quantum dot.
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Submitted 16 November, 2023;
originally announced November 2023.
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Low disorder and high valley splitting in silicon
Authors:
Davide Degli Esposti,
Lucas E. A. Stehouwer,
Önder Gül,
Nodar Samkharadze,
Corentin Déprez,
Marcel Meyer,
Ilja N. Meijer,
Larysa Tryputen,
Saurabh Karwal,
Marc Botifoll,
Jordi Arbiol,
Sergey V. Amitonov,
Lieven M. K. Vandersypen,
Amir Sammak,
Menno Veldhorst,
Giordano Scappucci
Abstract:
The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the case of silicon, properties such as disorder and energy separation of conduction band valleys are commonly investigated individually upon modifications in selected parameters of the material stack. However, this reductio…
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The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the case of silicon, properties such as disorder and energy separation of conduction band valleys are commonly investigated individually upon modifications in selected parameters of the material stack. However, this reductionist approach fails to consider the interdependence between different structural and electronic properties at the danger of optimising one metric at the expense of the others. Here, we achieve a significant improvement in both disorder and valley splitting by taking a co-design approach to the material stack. We demonstrate isotopically-purified, strained quantum wells with high mobility of 3.14(8)$\times$10$^5$ cm$^2$/Vs and low percolation density of 6.9(1)$\times$10$^{10}$ cm$^{-2}$. These low disorder quantum wells support quantum dots with low charge noise of 0.9(3) $μ$eV/Hz$^{1/2}$ and large mean valley splitting energy of 0.24(7) meV, measured in qubit devices. By striking the delicate balance between disorder, charge noise, and valley splitting, these findings provide a benchmark for silicon as a host semiconductor for quantum dot qubits. We foresee the application of these heterostructures in larger, high-performance quantum processors.
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Submitted 2 February, 2024; v1 submitted 6 September, 2023;
originally announced September 2023.
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A vertical gate-defined double quantum dot in a strained germanium double quantum well
Authors:
Hanifa Tidjani,
Alberto Tosato,
Alexander Ivlev,
Corentin Déprez,
Stefan Oosterhout,
Lucas Stehouwer,
Amir Sammak,
Giordano Scappucci,
Menno Veldhorst
Abstract:
Gate-defined quantum dots in silicon-germanium heterostructures have become a compelling platform for quantum computation and simulation. Thus far, developments have been limited to quantum dots defined in a single plane. Here, we propose to advance beyond planar systems by exploiting heterostructures with multiple quantum wells. We demonstrate the operation of a gate-defined vertical double quant…
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Gate-defined quantum dots in silicon-germanium heterostructures have become a compelling platform for quantum computation and simulation. Thus far, developments have been limited to quantum dots defined in a single plane. Here, we propose to advance beyond planar systems by exploiting heterostructures with multiple quantum wells. We demonstrate the operation of a gate-defined vertical double quantum dot in a strained germanium double quantum well. In quantum transport measurements we observe stability diagrams corresponding to a double quantum dot system. We analyze the capacitive coupling to the nearby gates and find two quantum dots accumulated under the central plunger gate. We extract the position and estimated size, from which we conclude that the double quantum dots are vertically stacked in the two quantum wells. We discuss challenges and opportunities and outline potential applications in quantum computing and quantum simulation.
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Submitted 24 May, 2023; v1 submitted 23 May, 2023;
originally announced May 2023.
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Germanium wafers for strained quantum wells with low disorder
Authors:
Lucas E. A. Stehouwer,
Alberto Tosato,
Davide Degli Esposti,
Davide Costa,
Menno Veldhorst,
Amir Sammak,
Giordano Scappucci
Abstract:
We grow strained Ge/SiGe heterostructures by reduced-pressure chemical vapor deposition on 100 mm Ge wafers. The use of Ge wafers as substrates for epitaxy enables high-quality Ge-rich SiGe strain-relaxed buffers with a threading dislocation density of (6$\pm$1)$\times$10$^5$ cm$^{-2}$, nearly an order of magnitude improvement compared to control strain-relaxed buffers on Si wafers. The associated…
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We grow strained Ge/SiGe heterostructures by reduced-pressure chemical vapor deposition on 100 mm Ge wafers. The use of Ge wafers as substrates for epitaxy enables high-quality Ge-rich SiGe strain-relaxed buffers with a threading dislocation density of (6$\pm$1)$\times$10$^5$ cm$^{-2}$, nearly an order of magnitude improvement compared to control strain-relaxed buffers on Si wafers. The associated reduction in short-range scattering allows for a drastic improvement of the disorder properties of the two-dimensional hole gas, measured in several Ge/SiGe heterostructure field-effect transistors. We measure an average low percolation density of (1.22$\pm$0.03)$\times$10$^{10}$ cm$^{-2}$, and an average maximum mobility of (3.4$\pm$0.1)$\times$10$^{6}$ cm$^2$/Vs and quantum mobility of (8.4$\pm$0.5)$\times$10$^{4}$ cm$^2$/Vs when the hole density in the quantum well is saturated to (1.65$\pm$0.02)$\times$10$^{11}$ cm$^{-2}$. We anticipate immediate application of these heterostructures for next-generation, higher-performance Ge spin-qubits and their integration into larger quantum processors.
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Submitted 22 August, 2023; v1 submitted 15 May, 2023;
originally announced May 2023.
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Dagger categories via anti-involutions and positivity
Authors:
Luuk Stehouwer,
Jan Steinebrunner
Abstract:
Dagger categories are an essential tool for categorical descriptions of quantum physics, but pose a challenge to category theorists as their definition is in tension with the ``principle of equivalence'' that lies at the heart of category theory.
In this note we propose the alternative, coherent definition of an ``involutive category with a notion of positivity'' and show that the $2$-category f…
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Dagger categories are an essential tool for categorical descriptions of quantum physics, but pose a challenge to category theorists as their definition is in tension with the ``principle of equivalence'' that lies at the heart of category theory.
In this note we propose the alternative, coherent definition of an ``involutive category with a notion of positivity'' and show that the $2$-category formed by these is biequivalent to the $2$-category of dagger categories.
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Submitted 6 April, 2023;
originally announced April 2023.
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Reflection Structures and Spin Statistics in Low Dimensions
Authors:
Lukas Müller,
Luuk Stehouwer
Abstract:
We give a complete classification of topological field theories with reflection structure and spin-statistics in one and two spacetime dimensions. Our answers can be naturally expressed in terms of an internal fermionic symmetry group $G$ which is different from the spacetime structure group. Fermionic groups encode symmetries of systems with fermions and time reversing symmetries. We show that 1-…
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We give a complete classification of topological field theories with reflection structure and spin-statistics in one and two spacetime dimensions. Our answers can be naturally expressed in terms of an internal fermionic symmetry group $G$ which is different from the spacetime structure group. Fermionic groups encode symmetries of systems with fermions and time reversing symmetries. We show that 1-dimensional topological field theories with reflection structure and spin-statistics are classified by finite dimensional hermitian representations of $G$. In spacetime dimension two we give a classification in terms strongly $G$-graded stellar Frobenius algebras. Our proofs are based on the cobordism hypothesis. Along the way, we develop some useful tools for the computation of homotopy fixed points of 2-group actions on bicategories.
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Submitted 16 January, 2023;
originally announced January 2023.
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Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots
Authors:
Brian Paquelet Wuetz,
Merritt P. Losert,
Sebastian Koelling,
Lucas E. A. Stehouwer,
Anne-Marije J. Zwerver,
Stephan G. J. Philips,
Mateusz T. Mądzik,
Xiao Xue,
Guoji Zheng,
Mario Lodari,
Sergey V. Amitonov,
Nodar Samkharadze,
Amir Sammak,
Lieven M. K. Vandersypen,
Rajib Rahman,
Susan N. Coppersmith,
Oussama Moutanabbir,
Mark Friesen,
Giordano Scappucci
Abstract:
Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting deterministically, by engineering a sharp interface, valley splitting fluctuations remain a serious problem for qubit uniformity, needed to scale up to large quantum processor…
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Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting deterministically, by engineering a sharp interface, valley splitting fluctuations remain a serious problem for qubit uniformity, needed to scale up to large quantum processors. Here, we elucidate and statistically predict the valley splitting by the holistic integration of 3D atomic-level properties, theory and transport. We find that the concentration fluctuations of Si and Ge atoms within the 3D landscape of Si/SiGe interfaces can explain the observed large spread of valley splitting from measurements on many quantum dot devices. Against the prevailing belief, we propose to boost these random alloy composition fluctuations by incorporating Ge atoms in the Si quantum well to statistically enhance valley splitting.
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Submitted 1 December, 2022; v1 submitted 17 December, 2021;
originally announced December 2021.
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Some properties of $\operatorname{Pin}^\pm$-structures on compact surfaces
Authors:
Michael R. Klug,
Luuk Stehouwer
Abstract:
We show that two $\operatorname{Pin}$-structures on a surface differ by a diffeomorphism of the surface if and only if they are cobordant (for comparison, the analogous fact has already been shown for $\operatorname{Spin}$-structures). We give a construction that shows that this does not extend to dimensions greater than two. In addition, we count the number of $\operatorname{Pin}$-structures on a…
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We show that two $\operatorname{Pin}$-structures on a surface differ by a diffeomorphism of the surface if and only if they are cobordant (for comparison, the analogous fact has already been shown for $\operatorname{Spin}$-structures). We give a construction that shows that this does not extend to dimensions greater than two. In addition, we count the number of $\operatorname{Pin}$-structures on a surface in a given cobordism class.
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Submitted 14 December, 2021;
originally announced December 2021.
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Interacting SPT phases are not Morita invariant
Authors:
Luuk Stehouwer
Abstract:
The tenfold way provides a strong organizing principle for invertible topological phases of matter. Mathematically, it is intimately connected with $K$-theory via the fact that there exist exactly ten Morita classes of simple real superalgebras. This connection is physically unsurprising, since weakly interacting topological phases are classified by $K$-theory. We argue that when strong interactio…
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The tenfold way provides a strong organizing principle for invertible topological phases of matter. Mathematically, it is intimately connected with $K$-theory via the fact that there exist exactly ten Morita classes of simple real superalgebras. This connection is physically unsurprising, since weakly interacting topological phases are classified by $K$-theory. We argue that when strong interactions are present, care has to be taken when formulating the exact ten symmetry groups present in the tenfold way table. We study this phenomenon in the example of class D by providing two possible mathematical interpretations of a class D symmetry. These two interpretations of class D result in Morita-equivalent but different symmetry groups. As $K$-theory cannot distinguish Morita-equivalent protecting symmetry groups, the two approaches lead to the same classification of topological phases on the weakly interacting side. However, we show that these two different symmetry groups yield different interacting classifications in spacetime dimension 2+1. We use the approach to interacting topological phases using bordism groups, reducing the relevant classification problem to a spectral sequence computation.
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Submitted 5 August, 2022; v1 submitted 14 October, 2021;
originally announced October 2021.
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Effect of quantum Hall edge strips on valley splitting in silicon quantum wells
Authors:
Brian Paquelet Wuetz,
Merritt P. Losert,
Alberto Tosato,
Mario Lodari,
Peter L. Bavdaz,
Lucas Stehouwer,
Payam Amin,
James S. Clarke,
Susan N. Coppersmith,
Amir Sammak,
Menno Veldhorst,
Mark Friesen,
Giordano Scappucci
Abstract:
We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on both perpendicular magnetic field $B$ and Hall density by performing activation energy measurements in the quantum Hall regime over a large range of filling factors. The mobility gap of the valley-split levels increases…
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We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on both perpendicular magnetic field $B$ and Hall density by performing activation energy measurements in the quantum Hall regime over a large range of filling factors. The mobility gap of the valley-split levels increases linearly with $B$ and is strikingly independent of Hall density. The data are consistent with a transport model in which valley splitting depends on the incremental changes in density $eB/h$ across quantum Hall edge strips, rather than the bulk density. Based on these results, we estimate that the valley splitting increases with density at a rate of 116 $μ$eV/10$^{11}$cm$^{-2}$, consistent with theoretical predictions for near-perfect quantum well top interfaces.
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Submitted 29 September, 2020; v1 submitted 3 June, 2020;
originally announced June 2020.
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Classification of crystalline topological insulators through K-theory
Authors:
Luuk Stehouwer,
Jan de Boer,
Jorrit Kruthoff,
Hessel Posthuma
Abstract:
Topological phases for free fermions in systems with crystal symmetry are classified by the topology of the valence band viewed as a vector bundle over the Brillouin zone. Additional symmetries, such as crystal symmetries which act non-trivially on the Brillouin zone, or time-reversal symmetry, endow the vector bundle with extra structure. These vector bundles are classified by a suitable version…
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Topological phases for free fermions in systems with crystal symmetry are classified by the topology of the valence band viewed as a vector bundle over the Brillouin zone. Additional symmetries, such as crystal symmetries which act non-trivially on the Brillouin zone, or time-reversal symmetry, endow the vector bundle with extra structure. These vector bundles are classified by a suitable version of K-theory. While relatively easy to define, these K-theory groups are notoriously hard to compute in explicit examples. In this paper we describe in detail how one can compute these K-theory groups starting with a decomposition of the Brillouin zone in terms of simple submanifolds on which the symmetries act nicely. The main mathematical tool is the Atiyah-Hirzebruch spectral sequence associated to such a decomposition, which will not only yield the explicit result for several crystal symmetries, but also sheds light on the origin of the topological invariants. This extends results that have appeared in the literature so far. We also describe examples in which this approach fails to directly yield a conclusive answer, and discuss various open problems and directions for future research.
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Submitted 11 December, 2018; v1 submitted 6 November, 2018;
originally announced November 2018.
