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A manufacturable platform for photonic quantum computing
Authors:
Koen Alexander,
Andrea Bahgat,
Avishai Benyamini,
Dylan Black,
Damien Bonneau,
Stanley Burgos,
Ben Burridge,
Geoff Campbell,
Gabriel Catalano,
Alex Ceballos,
Chia-Ming Chang,
CJ Chung,
Fariba Danesh,
Tom Dauer,
Michael Davis,
Eric Dudley,
** Er-Xuan,
Josep Fargas,
Alessandro Farsi,
Colleen Fenrich,
Jonathan Frazer,
Masaya Fukami,
Yogeeswaran Ganesan,
Gary Gibson,
Mercedes Gimeno-Segovia
, et al. (70 additional authors not shown)
Abstract:
Whilst holding great promise for low noise, ease of operation and networking, useful photonic quantum computing has been precluded by the need for beyond-state-of-the-art components, manufactured by the millions. Here we introduce a manufacturable platform for quantum computing with photons. We benchmark a set of monolithically-integrated silicon photonics-based modules to generate, manipulate, ne…
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Whilst holding great promise for low noise, ease of operation and networking, useful photonic quantum computing has been precluded by the need for beyond-state-of-the-art components, manufactured by the millions. Here we introduce a manufacturable platform for quantum computing with photons. We benchmark a set of monolithically-integrated silicon photonics-based modules to generate, manipulate, network, and detect photonic qubits, demonstrating dual-rail photonic qubits with $99.98\% \pm 0.01\%$ state preparation and measurement fidelity, Hong-Ou-Mandel quantum interference between independent photon sources with $99.50\%\pm0.25\%$ visibility, two-qubit fusion with $99.22\%\pm0.12\%$ fidelity, and a chip-to-chip qubit interconnect with $99.72\%\pm0.04\%$ fidelity, not accounting for loss. In addition, we preview a selection of next generation technologies, demonstrating low-loss silicon nitride waveguides and components, fabrication-tolerant photon sources, high-efficiency photon-number-resolving detectors, low-loss chip-to-fiber coupling, and barium titanate electro-optic phase shifters.
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Submitted 26 April, 2024;
originally announced April 2024.
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Fabrication of Nanostructured GaAs/AlGaAs Waveguide for Low-Density Polariton Condensation from a Bound State in the Continuum
Authors:
F. Riminucci,
V. Ardizzone,
L. Francaviglia,
M. Lorenzon,
C. Stavrakas,
S. Dhuey,
A. Schwartzberg,
S. Zanotti,
D. Gerace,
K. Baldwin,
L. N. Pfeiffer,
G. Gigli,
D. F. Ogletree,
A. Weber-Bargioni,
S. Cabrini,
D. Sanvitto
Abstract:
Exciton-polaritons are hybrid light-matter states that arise from strong coupling between an exciton resonance and a photonic cavity mode. As bosonic excitations, they can undergo a phase transition to a condensed state that can emit coherent light without a population inversion. This aspect makes them good candidates for thresholdless lasers, yet short exciton-polariton lifetime has made it diffi…
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Exciton-polaritons are hybrid light-matter states that arise from strong coupling between an exciton resonance and a photonic cavity mode. As bosonic excitations, they can undergo a phase transition to a condensed state that can emit coherent light without a population inversion. This aspect makes them good candidates for thresholdless lasers, yet short exciton-polariton lifetime has made it difficult to achieve condensation at very low power densities. In this sense, long-lived symmetry-protected states are excellent candidates to overcome the limitations that arise from the finite mirror reflectivity of monolithic microcavities. In this work we use a photonic symmetry protected bound state in the continuum coupled to an excitonic resonance to achieve state-of-the-art polariton condensation threshold in GaAs/AlGaAs waveguide. Most important, we show the influence of fabrication control and how surface passivation via atomic layer deposition provides a way to reduce exciton quenching at the grating sidewalls.
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Submitted 11 May, 2022;
originally announced May 2022.
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Ultrafast optical melting of trimer superstructure in layered 1T'-TaTe2
Authors:
Khalid M. Siddiqui,
Daniel B. Durham,
Frederick Cropp,
Colin Ophus,
Sangeeta Rajpurohit,
Yanglin Zhu,
Johan D. Carlström,
Camille Stavrakas,
Zhiqiang Mao,
Archana Raja,
Pietro Musumeci,
Liang Z. Tan,
Andrew M. Minor,
Daniele Filippetto,
Robert A. Kaindl
Abstract:
Quasi-two-dimensional transition-metal dichalcogenides are a key platform for exploring emergent nanoscale phenomena arising from complex interactions. Access to the underlying degrees-of-freedom on their natural time scales motivates the use of advanced ultrafast probes sensitive to self-organised atomic-scale patterns. Here, we report the first ultrafast investigation of TaTe2, which exhibits un…
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Quasi-two-dimensional transition-metal dichalcogenides are a key platform for exploring emergent nanoscale phenomena arising from complex interactions. Access to the underlying degrees-of-freedom on their natural time scales motivates the use of advanced ultrafast probes sensitive to self-organised atomic-scale patterns. Here, we report the first ultrafast investigation of TaTe2, which exhibits unique charge and lattice trimer order characterised by a transition upon cooling from stripe-like chains into a $(3 \times 3)$ superstructure of trimer clusters. Utilising MeV-scale ultrafast electron diffraction, we capture the photo-induced TaTe2 structural dynamics -- exposing a rapid $\approx\!1.4$ ps melting of its low-temperature ordered state followed by recovery via thermalisation into a hot cluster superstructure. Density-functional calculations indicate that the initial quench is triggered by intra-trimer Ta charge transfer which destabilises the clusters, unlike melting of charge density waves in other TaX2 compounds. Our work paves the way for further exploration and ultimately rapid optical and electronic manipulation of trimer superstructures.
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Submitted 9 November, 2021; v1 submitted 7 September, 2020;
originally announced September 2020.
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Visualizing buried local carrier diffusion in halide perovskite crystals via two-photon microscopy
Authors:
Camille Stavrakas,
Géraud Delport,
Ayan A. Zhumekenov,
Miguel Anaya,
Rosemonde Chahbazian,
Osman M. Bakr,
Edward S. Barnard,
Samuel D. Stranks
Abstract:
Halide perovskites have shown great potential for light emission and photovoltaic applications due to their remarkable electronic properties and compatibility with cost-effective fabrication techniques. Although the device performances are promising, they are still limited by microscale heterogeneities in their photophysical properties. In particular, the relation between local heterogeneities and…
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Halide perovskites have shown great potential for light emission and photovoltaic applications due to their remarkable electronic properties and compatibility with cost-effective fabrication techniques. Although the device performances are promising, they are still limited by microscale heterogeneities in their photophysical properties. In particular, the relation between local heterogeneities and the diffusion of charge carriers at the surface and in the bulk, crucial for efficient collection of charges in a light harvesting device, is not well understood. Here, a photoluminescence tomography technique is developed in a confocal microscope using one- and two-photon excitation to distinguish between local surface and bulk diffusion of charge carriers in methylammonium lead bromide single crystals. The local temporal diffusion is probed at various excitation depths to build statistics of local electronic diffusion coefficients. The measured values range between 0.3 to 2 $cm^2.s^{-1}$ depending on the local trap density and the morphological environment - a distribution that would be missed from analogous macroscopic or surface-measurements. Tomographic images of carrier diffusion were reconstructed to reveal buried crystal defects that act as barriers to carrier transport. This work reveals a new framework to understand and homogenise diffusion pathways, which are extremely sensitive to local properties and buried defects.
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Submitted 28 September, 2019;
originally announced September 2019.
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Strain engineering of the silicon-vacancy center in diamond
Authors:
Srujan Meesala,
Young-Ik Sohn,
Benjamin **ault,
Linbo Shao,
Haig A. Atikian,
Jeffrey Holzgrafe,
Mustafa Gundogan,
Camille Stavrakas,
Alp Sipahigil,
Cleaven Chia,
Michael J. Burek,
Mian Zhang,
Lue Wu,
Jose L. Pacheco,
John Abraham,
Edward Bielejec,
Mikhail D. Lukin,
Mete Atature,
Marko Loncar
Abstract:
We control the electronic structure of the silicon-vacancy (SiV) color-center in diamond by changing its static strain environment with a nano-electro-mechanical system. This allows deterministic and local tuning of SiV optical and spin transition frequencies over a wide range, an essential step towards multi-qubit networks. In the process, we infer the strain Hamiltonian of the SiV revealing larg…
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We control the electronic structure of the silicon-vacancy (SiV) color-center in diamond by changing its static strain environment with a nano-electro-mechanical system. This allows deterministic and local tuning of SiV optical and spin transition frequencies over a wide range, an essential step towards multi-qubit networks. In the process, we infer the strain Hamiltonian of the SiV revealing large strain susceptibilities of order 1 PHz/strain for the electronic orbital states. We identify regimes where the spin-orbit interaction results in a large strain suseptibility of order 100 THz/strain for spin transitions, and propose an experiment where the SiV spin is strongly coupled to a nanomechanical resonator.
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Submitted 31 January, 2018; v1 submitted 29 January, 2018;
originally announced January 2018.
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Maximising and Stabilising Luminescence in Metal Halide Perovskite Device Structures
Authors:
Mojtaba Abdi-Jalebi,
Zahra Andaji-Garmaroudi,
Stefania Cacovich,
Camille Stavrakas,
Bertrand Philippe,
Johannes M. Richter,
Mejd Alsari,
Edward P. Booker,
Eline M. Hutter,
Andrew J. Pearson,
Samuele Lilliu,
Tom J Savenije,
Håkan Rensmo,
Giorgio Divitini,
Caterina Ducati,
Richard H. Friend,
Samuel D. Stranks
Abstract:
Metal halide perovskites are attracting tremendous interest for a variety of optoelectronic applications. The ability to tune the perovskite bandgap by tweaking the chemical compositions opens up new applications as coloured emitters and as components of tandem photovoltaics. Nevertheless, non-radiative losses are still limiting performance, with luminescence yields in state-of-the-art perovskite…
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Metal halide perovskites are attracting tremendous interest for a variety of optoelectronic applications. The ability to tune the perovskite bandgap by tweaking the chemical compositions opens up new applications as coloured emitters and as components of tandem photovoltaics. Nevertheless, non-radiative losses are still limiting performance, with luminescence yields in state-of-the-art perovskite solar cells still far from 100% under solar illumination conditions. Furthermore, in mixed halide perovskite systems designed for continuous bandgap tunability (bandgaps ~1.7-1.9 eV), photo-induced ion segregation leads to bandgap instabilities. Here, we substantially mitigate both non-radiative losses and photo-induced ion migration in perovskite structures by decorating the surfaces and grain boundaries with passivating potassium-halide interlayers. We demonstrate external photo-luminescence quantum yields of 66%, translating to internal yields exceeding 95%. The high luminescence yields are achieved while maintaining high mobilities over 40 cm2V-1s-1, giving the elusive combination of both high luminescence and excellent charge transport. We find that the external luminescence yield when interfaced with electrodes in a solar cell device stack, a quantity that must be maximized to approach the efficiency limits, remains as high as 15%, indicating very clean interfaces. We also demonstrate the inhibition of photo-induced ion migration processes across a wide range of mixed halide perovskite bandgaps that otherwise show bandgap instabilities. We validate these results in full operating solar cells, highlighting the importance of stabilising luminescence in device structures. Our work represents a critical breakthrough in the construction of tunable halide perovskite films and interfaces that can approach the efficiency limits in tandem solar cells and coloured LEDs.
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Submitted 13 December, 2017;
originally announced December 2017.
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Controlling the coherence of a diamond spin qubit through strain engineering
Authors:
Young-Ik Sohn,
Srujan Meesala,
Benjamin **ault,
Haig A. Atikian,
Jeffrey Holzgrafe,
Mustafa Gundogan,
Camille Stavrakas,
Megan J. Stanley,
Alp Sipahigil,
Joonhee Choi,
Mian Zhang,
Jose L. Pacheco,
John Abraham,
Edward Bielejec,
Mikhail D. Lukin,
Mete Atature,
Marko Loncar
Abstract:
The uncontrolled interaction of a quantum system with its environment is detrimental for quantum coherence. In the context of solid-state qubits, techniques to mitigate the impact of fluctuating electric and magnetic fields from the environment are well-developed. In contrast, suppression of decoherence from thermal lattice vibrations is typically achieved only by lowering the temperature of opera…
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The uncontrolled interaction of a quantum system with its environment is detrimental for quantum coherence. In the context of solid-state qubits, techniques to mitigate the impact of fluctuating electric and magnetic fields from the environment are well-developed. In contrast, suppression of decoherence from thermal lattice vibrations is typically achieved only by lowering the temperature of operation. Here, we use a nano-electro-mechanical system (NEMS) to mitigate the effect of thermal phonons on a solid-state quantum emitter without changing the system temperature. We study the silicon-vacancy (SiV) colour centre in diamond which has optical and spin transitions that are highly sensitive to phonons. First, we show that its electronic orbitals are highly susceptible to local strain, leading to its high sensitivity to phonons. By controlling the strain environment, we manipulate the electronic levels of the emitter to probe, control, and eventually, suppress its interaction with the thermal phonon bath. Strain control allows for both an impressive range of optical tunability and significantly improved spin coherence. Finally, our findings indicate that it may be possible to achieve strong coupling between the SiV spin and single phonons, which can lead to the realisation of phonon-mediated quantum gates and nonlinear quantum phononics.
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Submitted 31 January, 2018; v1 submitted 12 June, 2017;
originally announced June 2017.
