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Semiconductor Epitaxy in Superconducting Templates
Authors:
M. F. Ritter,
H. Schmid,
M. Sousa,
P. Staudinger,
D. Z. Haxell,
M. A. Mueed,
B. Madon,
A. Pushp,
H. Riel,
F. Nichele
Abstract:
Integration of high quality semiconductor-superconductor devices into scalable and CMOS compatible architectures remains an outstanding challenge, currently hindering their practical implementation. Here, we demonstrate growth of InAs nanowires monolithically integrated on Si inside lateral cavities containing superconducting TiN elements. This technique allows growth of hybrid devices characteriz…
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Integration of high quality semiconductor-superconductor devices into scalable and CMOS compatible architectures remains an outstanding challenge, currently hindering their practical implementation. Here, we demonstrate growth of InAs nanowires monolithically integrated on Si inside lateral cavities containing superconducting TiN elements. This technique allows growth of hybrid devices characterized by sharp semiconductor-superconductor interfaces and with alignment along arbitrary crystallographic directions. Electrical characterization at low temperature reveals proximity induced superconductivity in InAs via a transparent interface.
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Submitted 12 August, 2021;
originally announced August 2021.
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Spatially Resolved Thermoelectric Effects in Operando Semiconductor-Metal Nanowire Heterostructures
Authors:
Nadine Gächter,
Fabian Könemann,
Masiar Sistani,
Maximilian G. Bartmann,
Marilyne Sousa,
Philipp Staudinger,
Alois Lugstein,
Bernd Gotsmann
Abstract:
The thermoelectric properties of a nanoscale germanium segment connected by aluminium nanowires are studied using scanning thermal microscopy. The germanium segment of 168\,nm length features atomically sharp interfaces to the aluminium wires and is surrounded by an Al$_2$O$_3$ shell. The temperature distribution along the self-heated nanowire is measured as a function of the applied electrical cu…
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The thermoelectric properties of a nanoscale germanium segment connected by aluminium nanowires are studied using scanning thermal microscopy. The germanium segment of 168\,nm length features atomically sharp interfaces to the aluminium wires and is surrounded by an Al$_2$O$_3$ shell. The temperature distribution along the self-heated nanowire is measured as a function of the applied electrical current, for both Joule and Peltier effects. An analysis is developed that is able to extract the thermal and thermoelectric properties including thermal conductivity, the thermal boundary resistance to the substrate and the Peltier coefficient from a single measurement. Our investigations demonstrate the potential of quantitative measurements of temperature around self-heated devices and structures down to the scattering length of heat carriers.
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Submitted 28 June, 2020;
originally announced June 2020.
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Wurtzite InP Microdisks: from Epitaxy to Room-Temperature Lasing
Authors:
Philipp Staudinger,
Svenja Mauthe,
Noelia Vico Triviño,
Steffen Reidt,
Kirsten E. Moselund,
Heinz Schmid
Abstract:
Metastable wurtzite crystal phases of semiconductors comprise enormous potential for high-performance electro-optical devices, owed to their extended tunable direct band gap range. However, synthesizing these materials in good quality and beyond nanowire size constraints has remained elusive. In this work, the epitaxy of wurtzite InP microdisks and related geometries on insulator for optical appli…
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Metastable wurtzite crystal phases of semiconductors comprise enormous potential for high-performance electro-optical devices, owed to their extended tunable direct band gap range. However, synthesizing these materials in good quality and beyond nanowire size constraints has remained elusive. In this work, the epitaxy of wurtzite InP microdisks and related geometries on insulator for optical applications is explored. This is achieved by an elaborate combination of selective area growth of fins and a zipper-induced epitaxial lateral overgrowth, which enables co-integration of diversely shaped crystals at precise position. The grown material possesses high phase purity and excellent optical quality characterized by STEM and $μ$-PL. Optically pumped lasing at room temperature is achieved in microdisks with a lasing threshold of 365 $μJ/cm^2$, thus demonstrating promise for a wide range of photonic applications.
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Submitted 22 April, 2020;
originally announced April 2020.
