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Nanoscale single-electron box with a floating lead for quantum sensing: modelling and device characterization
Authors:
Nikolaos Petropoulos,
Xutong Wu,
Andrii Sokolov,
Panagiotis Giounanlis,
Imran Bashir,
Mike Asker,
Dirk Leipold,
Andrew K. Mitchell,
Robert B. Staszewski,
Elena Blokhina
Abstract:
We present an in-depth analysis of a single-electron box (SEB) biased through a floating node technique that is common in charge-coupled devices (CCDs). The device is analyzed and characterized in the context of single-electron charge-sensing techniques for integrated silicon quantum dots (QD). The unique aspect of our SEB design is the incorporation of a metallic floating node, strategically empl…
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We present an in-depth analysis of a single-electron box (SEB) biased through a floating node technique that is common in charge-coupled devices (CCDs). The device is analyzed and characterized in the context of single-electron charge-sensing techniques for integrated silicon quantum dots (QD). The unique aspect of our SEB design is the incorporation of a metallic floating node, strategically employed for sensing and precise injection of electrons into an electrostatically formed QD. To analyse the SEB, we propose an extended multi-orbital Anderson impurity model (MOAIM), adapted to our nanoscale SEB system, that is used to predict theoretically the behaviour of the SEB in the context of a charge-sensing application. The validation of the model and the sensing technique has been carried out on a QD fabricated in a fully depleted silicon on insulator (FDSOI) process on a 22-nm technological node. We demonstrate the MOAIM's efficacy in predicting the observed electronic behavior and elucidating the complex electron dynamics and correlations in the SEB. The results of our study reinforce the versatility and precision of the model in the realm of nanoelectronics and highlight the practical utility of the metallic floating node as a mechanism for charge injection and detection in integrated QDs. Finally, we identify the limitations of our model in capturing higher-order effects observed in our measurements and propose future outlooks to reconcile some of these discrepancies.
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Submitted 23 April, 2024;
originally announced April 2024.
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Monolithic Integration of Quantum Resonant Tunneling Gate on a 22nm FD-SOI CMOS Process
Authors:
Imran Bashir,
Dirk Leipold,
Elena Blokhina,
Mike Asker,
David Redmond,
Ali Esmailiyan,
Panagiotis Giounanlis,
Hans Haenlein,
Xuton Wu,
Andrii Sokolov,
Dennis Andrade-Miceli,
Andrew K. Mitchell,
Robert Bogdan Staszewski
Abstract:
The proliferation of quantum computing technologies has fueled the race to build a practical quantum computer. The spectrum of the innovation is wide and encompasses many aspects of this technology, such as the qubit, control and detection mechanism, cryogenic electronics, and system integration. A few of those emerging technologies are poised for successful monolithic integration of cryogenic ele…
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The proliferation of quantum computing technologies has fueled the race to build a practical quantum computer. The spectrum of the innovation is wide and encompasses many aspects of this technology, such as the qubit, control and detection mechanism, cryogenic electronics, and system integration. A few of those emerging technologies are poised for successful monolithic integration of cryogenic electronics with the quantum structure where the qubits reside. In this work, we present a fully integrated Quantum Processor Unit in which the quantum core is co-located with control and detection circuits on the same die in a commercial 22-nm FD-SOI process from GlobalFoundries. The system described in this work comprises a two dimensional (2D) 240 qubits array integrated with 8 detectors and 32 injectors operating at 3K and inside a two-stage Gifford-McMahon cryo-cooler. The power consumption of each detector and injector is 1mW and 0.27mW, respectively. The control sequence is programmed into an on-chip pattern generator that acts as a command and control block for all hardware in the Quantum Processor Unit. Using the aforementioned apparatus, we performed a quantum resonant tunneling experiment on two qubits inside the 2D qubit array. With supporting lab measurements, we demonstrate the feasibility of the proposed architecture in scaling-up the existing quantum core to thousands of qubits.
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Submitted 4 February, 2022; v1 submitted 8 December, 2021;
originally announced December 2021.
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CMOS Quantum Computing: Toward A Quantum Computer System-on-Chip
Authors:
Reza Nikandish,
Elena Blokhina,
Robert Bogdan Staszewski
Abstract:
Quantum computing is experiencing the transition from a scientific to an engineering field with the promise to revolutionize an extensive range of applications demanding high-performance computing. Many implementation approaches have been pursued for quantum computing systems, where currently the main streams can be identified based on superconducting, photonic, trapped-ion, and semiconductor qubi…
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Quantum computing is experiencing the transition from a scientific to an engineering field with the promise to revolutionize an extensive range of applications demanding high-performance computing. Many implementation approaches have been pursued for quantum computing systems, where currently the main streams can be identified based on superconducting, photonic, trapped-ion, and semiconductor qubits. Semiconductor-based quantum computing, specifically using CMOS technologies, is promising as it provides potential for the integration of qubits with their control and readout circuits on a single chip. This paves the way for the realization of a large-scale quantum computing system for solving practical problems. In this paper, we present an overview and future perspective of CMOS quantum computing, exploring developed semiconductor qubit structures, quantum gates, as well as control and readout circuits, with a focus on the promises and challenges of CMOS implementation.
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Submitted 16 December, 2020;
originally announced December 2020.
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Simulation Methodology for Electron Transfer in CMOS Quantum Dots
Authors:
Andrii Sokolov,
Dmytro Mishagli,
Panagiotis Giounanlis,
Imran Bashir,
Dirk Leipold,
Eugene Koskin,
R. Bogdan Staszewski,
Elena Blokhina
Abstract:
The construction of quantum computer simulators requires advanced software which can capture the most significant characteristics of the quantum behavior and quantum states of qubits in such systems. Additionally, one needs to provide valid models for the description of the interface between classical circuitry and quantum core hardware. In this study, we model electron transport in semiconductor…
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The construction of quantum computer simulators requires advanced software which can capture the most significant characteristics of the quantum behavior and quantum states of qubits in such systems. Additionally, one needs to provide valid models for the description of the interface between classical circuitry and quantum core hardware. In this study, we model electron transport in semiconductor qubits based on an advanced CMOS technology. Starting from 3D simulations, we demonstrate an order reduction and the steps necessary to obtain ordinary differential equations on probability amplitudes in a multi-particle system. We compare numerical and semi-analytical techniques concluding this paper by examining two case studies: the electron transfer through multiple quantum dots and the construction of a Hadamard gate simulated using a numerical method to solve the time-dependent Schrodinger equation and the tight-binding formalism for a time-dependent Hamiltonian.
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Submitted 24 June, 2020;
originally announced June 2020.
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CMOS Position-Based Charge Qubits: Theoretical Analysis of Control and Entanglement
Authors:
Elena Blokhina,
Panagiotis Giounanlis,
Andrew Mitchell,
Dirk Leipold,
Robert Bogdan Staszewski
Abstract:
In this study, a formal definition, robustness analysis and discussion on the control of a position-based semiconductor charge qubit are presented. Such a qubit can be realized in a chain of coupled quantum dots, forming a register of charge-coupled transistor-like devices, and is intended for CMOS implementation in scalable quantum computers. We discuss the construction and operation of this qubi…
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In this study, a formal definition, robustness analysis and discussion on the control of a position-based semiconductor charge qubit are presented. Such a qubit can be realized in a chain of coupled quantum dots, forming a register of charge-coupled transistor-like devices, and is intended for CMOS implementation in scalable quantum computers. We discuss the construction and operation of this qubit, its Bloch sphere, and relation with maximally localized Wannier functions which define its position-based nature. We then demonstrate how to build a tight-binding model of single and multiple interacting qubits from first principles of the Schrödinger formalism. We provide all required formulae to calculate the maximally localized functions and the entries of the Hamiltonian matrix in the presence of interaction between qubits. We use three illustrative examples to demonstrate the electrostatic interaction of electrons and discuss how to build a model for many-electron (qubit) system. To conclude this study, we show that charge qubits can be entangled through electrostatic interaction.
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Submitted 24 December, 2019;
originally announced December 2019.
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Towards quantum internet and non-local communication in position based qubits
Authors:
Krzysztof Pomorski,
Robert Bogdan Staszewski
Abstract:
Non-local communication among position based qubits is described for the system of the quantum electromagnetic resonator entangled to two semiconductor electrostatic qubits via interaction between matter and radiation by Jaynes-Cummings tight-binding Hamiltonian. Principle of quantum communication between position dependent qubits is explained with usage of simplistic model. All stages of derivati…
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Non-local communication among position based qubits is described for the system of the quantum electromagnetic resonator entangled to two semiconductor electrostatic qubits via interaction between matter and radiation by Jaynes-Cummings tight-binding Hamiltonian. Principle of quantum communication between position dependent qubits is explained with usage of simplistic model. All stages of derivation are presented. The case of two semiconductor position-dependent qubits interacting with quantum electromagnetic cavity is discussed and general form of tight-binding Hamiltonian is derived with renormalized tight-binding coefficients. The obtained results bring foundation for the construction of quantum networks and prospect of quantum internet. The presented work brings the perspective of creation of quantum communication networks between electrostatic position based qubits that are implementable in semiconductor single electron devices and in particular in current CMOS technologies. The case of two capacitively interacting qubits biased to quantum electromagnetic cavity is also described.
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Submitted 20 November, 2019; v1 submitted 3 November, 2019;
originally announced November 2019.
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Breaking Bandwidth Limit: A Review of Broadband Doherty Power Amplifier Design for 5G
Authors:
Gholamreza Nikandish,
Robert Bogdan Staszewski,
Anding Zhu
Abstract:
The Doherty power amplifier (DPA) has been extensively explored in the past and has become one of the most widely used power amplifier (PA) architectures in cellular base stations. The classical DPA suffers intrinsic bandwidth constrains which limit its application in future 5G wireless transmitters. In this paper, we present a comprehensive review of the DPA bandwidth enhancement techniques propo…
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The Doherty power amplifier (DPA) has been extensively explored in the past and has become one of the most widely used power amplifier (PA) architectures in cellular base stations. The classical DPA suffers intrinsic bandwidth constrains which limit its application in future 5G wireless transmitters. In this paper, we present a comprehensive review of the DPA bandwidth enhancement techniques proposed in literature in order to provide a thorough understanding of the DPA's broadband design for high-efficiency 5G wireless transmitters. We elaborate on the main bandwidth limitation sources and provide circuit design insights. We then follow with an overview of bandwidth enhancement techniques developed for the DPA, including modified load-modulation networks, frequency response optimization, parasitic compensation, post-matching, as well as distributed DPA, dual-input digital DPA, transformer-based power-combining PA, and transformer-less load modulated PA architectures. Furthermore, challenges and design techniques for integrated circuit (IC) implementation of broadband DPAs are discussed, including a review of circuits developed in CMOS, SiGe, and GaN processes, and operating in RF and mm-Wave frequencies.
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Submitted 21 August, 2019;
originally announced August 2019.
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Analytical Solutions for N-Electron Interacting System Confined in Graph of Coupled Electrostatic Semiconductor and Superconducting Quantum Dots in Tight-Binding Model with Focus on Quantum Information Processing
Authors:
Krzysztof Pomorski,
Robert Bogdan Staszewski
Abstract:
Analytical solutions for a tight-binding model are presented for a position-based qubit and N interacting qubits realized by quasi-one-dimensional network of coupled quantum dots expressed by connected or disconnected graphs of any topology in 2 and 3 dimensions where one electron is presented at each separated graphs. Electron(s) quantum dynamic state is described under various electromagnetic ci…
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Analytical solutions for a tight-binding model are presented for a position-based qubit and N interacting qubits realized by quasi-one-dimensional network of coupled quantum dots expressed by connected or disconnected graphs of any topology in 2 and 3 dimensions where one electron is presented at each separated graphs. Electron(s) quantum dynamic state is described under various electromagnetic circumstances with an omission spin degree-of-freedom. The action of Hadamard and phase rotating gate is given by analytical formulas derived and formulated for any case of physical field evolution preserving the occupancy of two-energy level system. The procedure for heating up and cooling down of the quantum state placed in position based qubit is described. The interaction of position-based qubit with electromagnetic cavity is described. In particular non-local communication between position based qubits is given. It opens the perspective of implementation of quantum internet among electrostatic CMOS quantum computers (quantum chips). The interface between superconducting Josephson junction and semiconductor position-based qubit implemented in coupled semiconductor q-dots is described such that it can be the base for electrostatic interface between superconducting and semiconductor quantum computer. Modification of Andreev Bound State in Josephson junction by the presence of semiconductor qubit in its proximity and electrostatic interaction with superconducting qubit is spotted by the minimalistic tight-binding model. The obtained results allow in creating interface between semiconductor quantum computer and superconducting quantum computer. They open the perspective of construction of QISKIT like software that will describe both types of quantum computers as well as their interface.
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Submitted 22 October, 2019; v1 submitted 6 July, 2019;
originally announced July 2019.
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Properties of Coupled Single-Electron Lines
Authors:
Krzysztof Pomorski,
Panagiotis Giounanlis,
Elena Blokhina,
Imran Bashir,
Dirk Leipold,
Robert Bogdan Staszewski
Abstract:
Fundamental properties of two electrostatically interacting single-electron lines (SEL) are determined from a minimalistic tight-binding model. The lines are represented by a chain of coupled quantum wells that could be implemented in a mainstream nanoscale CMOS process technology and tuned electrostatically by DC or AC voltage biases. The obtained results show an essential qualitative difference…
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Fundamental properties of two electrostatically interacting single-electron lines (SEL) are determined from a minimalistic tight-binding model. The lines are represented by a chain of coupled quantum wells that could be implemented in a mainstream nanoscale CMOS process technology and tuned electrostatically by DC or AC voltage biases. The obtained results show an essential qualitative difference with two capacitively coupled classical electrical lines. The derived equations and their solutions prove that the two coupled SET lines can create an entanglement between electrons. The results indicate a possibility of constructing electrostatic (non-spin) coupled qubits that could be used as building blocks in a CMOS quantum computer.
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Submitted 9 May, 2019; v1 submitted 14 April, 2019;
originally announced April 2019.
