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Electrically detected magnetic resonance using radio-frequency reflectometry
Authors:
H. Huebl,
R. P. Starrett,
D. R. McCamey,
A. J. Ferguson,
L. H. Willems van Beveren
Abstract:
The authors demonstrate readout of electrically detected magnetic resonance at radio frequencies by means of an LCR tank circuit. Applied to a silicon field-effect transistor at milli-kelvin temperatures, this method shows a 25-fold increased signal-to-noise ratio of the conduction band electron spin resonance and a higher operational bandwidth of > 300 kHz compared to the kHz bandwidth of conve…
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The authors demonstrate readout of electrically detected magnetic resonance at radio frequencies by means of an LCR tank circuit. Applied to a silicon field-effect transistor at milli-kelvin temperatures, this method shows a 25-fold increased signal-to-noise ratio of the conduction band electron spin resonance and a higher operational bandwidth of > 300 kHz compared to the kHz bandwidth of conventional readout techniques. This increase in temporal resolution provides a method for future direct observations of spin dynamics in the electrical device characteristics.
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Submitted 12 July, 2009;
originally announced July 2009.
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Radio-frequency reflectometry on large gated 2-dimensional systems
Authors:
L. J. Taskinen,
R. P. Starrett,
T. P. Martin,
A. P. Micolich,
A. R. Hamilton,
M. Y. Simmons,
D. A. Ritchie,
M. Pepper
Abstract:
We have embedded an AlGaAs/GaAs based, gated 2D hole system (2DHS) into an impedance transformer $LC$ circuit, and show that by using radio-frequency reflectometry it is possible to perform sensitive, large bandwidth, electrical resistance measurements of 2D systems at mK temperatures. We construct a simple lumped element model where the gated 2DHS is described as a resistive transmission line.…
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We have embedded an AlGaAs/GaAs based, gated 2D hole system (2DHS) into an impedance transformer $LC$ circuit, and show that by using radio-frequency reflectometry it is possible to perform sensitive, large bandwidth, electrical resistance measurements of 2D systems at mK temperatures. We construct a simple lumped element model where the gated 2DHS is described as a resistive transmission line. The model gives a qualitative understanding of the experimental results. As an example, we use our method to map out the Landau level evolution in a 2DHS as a function of magnetic field and gate voltage.
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Submitted 28 October, 2008;
originally announced October 2008.
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Bias spectroscopy and simultaneous SET charge state detection of Si:P double dots
Authors:
M. Mitic,
K. D. Petersson,
M. C. Cassidy,
R. P. Starrett,
E. Gauja,
A. J. Ferguson,
C. Yang,
D. N. Jamieson,
R. G. Clark,
A. S. Dzurak
Abstract:
We report a detailed study of low-temperature (mK) transport properties of a silicon double-dot system fabricated by phosphorous ion implantation. The device under study consists of two phosphorous nanoscale islands doped to above the metal-insulator transition, separated from each other and the source and drain reservoirs by nominally undoped (intrinsic) silicon tunnel barriers. Metallic contro…
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We report a detailed study of low-temperature (mK) transport properties of a silicon double-dot system fabricated by phosphorous ion implantation. The device under study consists of two phosphorous nanoscale islands doped to above the metal-insulator transition, separated from each other and the source and drain reservoirs by nominally undoped (intrinsic) silicon tunnel barriers. Metallic control gates, together with an Al-AlOx single-electron transistor, were positioned on the substrate surface, capacitively coupled to the buried dots. The individual double-dot charge states were probed using source-drain bias spectroscopy combined with non-invasive SET charge sensing. The system was measured in linear (VSD = 0) and non-linear (VSD <> 0) regimes allowing calculations of the relevant capacitances. Simultaneous detection using both SET sensing and source-drain current measurements was demonstrated, providing a valuable combination for the analysis of the system. Evolution of the triple points with applied bias was observed using both charge and current sensing. Coulomb diamonds, showing the interplay between the Coulomb charging effects of the two dots, were measured using simultaneous detection and compared with numerical simulations.
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Submitted 4 February, 2008;
originally announced February 2008.
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Observing sub-microsecond telegraph noise with the radio frequency single electron transistor
Authors:
T. M. Buehler,
D. J. Reilly,
R. P. Starrett,
V. C. Chan,
A. R. Hamilton,
A. S. Dzurak,
R. G. Clark
Abstract:
Telegraph noise, which originates from the switching of charge between meta-stable trap** sites, becomes increasingly important as device sizes approach the nano-scale. For charge-based quantum computing, this noise may lead to decoherence and loss of read out fidelity. Here we use a radio frequency single electron transistor (rf-SET) to probe the telegraph noise present in a typical semicondu…
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Telegraph noise, which originates from the switching of charge between meta-stable trap** sites, becomes increasingly important as device sizes approach the nano-scale. For charge-based quantum computing, this noise may lead to decoherence and loss of read out fidelity. Here we use a radio frequency single electron transistor (rf-SET) to probe the telegraph noise present in a typical semiconductor-based quantum computer architecture. We frequently observe micro-second telegraph noise, which is a strong function of the local electrostatic potential defined by surface gate biases. We present a method for studying telegraph noise using the rf-SET and show results for a charge trap in which the capture and emission of a single electron is controlled by the bias applied to a surface gate.
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Submitted 22 September, 2004;
originally announced September 2004.
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Single-Shot Readout with the Radio Frequency Single Electron Transistor in the Presence of Charge Noise
Authors:
T. M. Buehler,
D. J. Reilly,
R. P. Starrett,
Andrew D. Greentree,
A. R. Hamilton,
A. S. Dzurak,
R. G. Clark
Abstract:
The radio frequency single electron transistor (rf-SET) possesses key requirements necessary for reading out a solid state quantum computer. This work explores the use of the rf-SET as a single-shot readout device in the presence of 1/f and telegraph charge noise. For a typical spectrum of 1/f noise we find that high fidelity, single-shot measurements are possible for signals q > 0.01e. For the…
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The radio frequency single electron transistor (rf-SET) possesses key requirements necessary for reading out a solid state quantum computer. This work explores the use of the rf-SET as a single-shot readout device in the presence of 1/f and telegraph charge noise. For a typical spectrum of 1/f noise we find that high fidelity, single-shot measurements are possible for signals q > 0.01e. For the case of telegraph noise, we present a cross-correlation measurement technique that uses two rf-SETs to suppress the effect of random switching events on readout. We demonstrate this technique by monitoring the charge state of a metal double dot system on microsecond time-scales. Such a scheme will be advantageous in achieving high readout fidelity in a solid state quantum computer.
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Submitted 22 September, 2004; v1 submitted 16 April, 2003;
originally announced April 2003.
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Development and operation of the twin radio frequency single electron transistor for solid state qubit readout
Authors:
T. M. Buehler,
D. J. Reilly,
R. P. Starrett,
N. A. Court,
A. R. Hamilton,
A. S. Dzurak,
R. G. Clark
Abstract:
Ultra-sensitive detectors and readout devices based on the radio frequency single electron transistor (rf-SET) combine near quantum-limited sensitivity with fast operation. Here we describe a twin rf-SET detector that uses two superconducting rf-SETs to perform fast, real-time cross-correlated measurements in order to distinguish sub-electron signals from charge noise on microsecond time-scales.…
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Ultra-sensitive detectors and readout devices based on the radio frequency single electron transistor (rf-SET) combine near quantum-limited sensitivity with fast operation. Here we describe a twin rf-SET detector that uses two superconducting rf-SETs to perform fast, real-time cross-correlated measurements in order to distinguish sub-electron signals from charge noise on microsecond time-scales. The twin rf-SET makes use of two tuned resonance circuits to simultaneously and independently address both rf-SETs using wavelength division multiplexing (WDM) and a single cryogenic amplifier. We focus on the operation of the twin rf-SET as a charge detector and evaluate the cross-talk between the two resonance circuits. Real time suppression of charge noise is demonstrated by cross correlating the signals from the two rf-SETs. For the case of simultaneous operation, the rf-SETs had charge sensitivities of $δq_{SET1} = 7.5 μe/\sqrt{Hz}$ and $δq_{SET2} = 4.4 μe/\sqrt{Hz}$.
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Submitted 7 April, 2004; v1 submitted 4 February, 2003;
originally announced February 2003.
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Magnetic susceptibility of the normal-superconducting transition in high-purity single-crystal alpha-uranium
Authors:
J. L. O'Brien,
A. R. Hamilton,
R. G. Clark,
C. H. Mielke,
J. L. Smith,
J. C. Cooley,
D. G. Rickel,
R. P. Starrett,
D. J. Reilly,
N. E. Lumpkin,
R. J. Hanrahan, Jr.,
W. L. Hults
Abstract:
We report complex ac magnetic susceptibility measurements of a superconducting transition in very high-quality single-crystal alpha-uranium using microfabricated coplanar magnetometers. We identify an onset of superconductivity at T~0.7 K in both the real and imaginary components of the susceptibility which is confirmed by resistivity data. A superconducting volume fraction argument, based on a…
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We report complex ac magnetic susceptibility measurements of a superconducting transition in very high-quality single-crystal alpha-uranium using microfabricated coplanar magnetometers. We identify an onset of superconductivity at T~0.7 K in both the real and imaginary components of the susceptibility which is confirmed by resistivity data. A superconducting volume fraction argument, based on a comparison with a calibration YBCO sample, indicates that the superconductivity in these samples may be filamentary. Our data also demonstrate the sensitivity of the coplanar micro-magnetometers, which are ideally suited to measurements in pulsed magnetic fields exceeding 100 T.
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Submitted 26 August, 2002;
originally announced August 2002.
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Experimental determination of B-T phase diagram of YBa_2Cu_3O_7-d to 150T for B perpendicular to c
Authors:
J. L. O'Brien,
H. Nakagawa,
A. S. Dzurak,
R. G. Clark,
B. E. Kane,
N. E. Lumpkin,
N. Miura,
E. E. Mitchell,
J. D. Goettee,
J. S. Brooks,
D. G. Rickel,
R. P. Starrett
Abstract:
The B-T phase diagram for thin film YBa_2Cu_3O_7-d with B parallel to the superconducting layers has been constructed from GHz transport measurements to 150T. Evidence for a transition from a high T regime dominated by orbital effects, to a low T regime where paramagnetic limiting drives the quenching of superconductivity, is seen. Up to 110T the upper critical field is found to be linear in T a…
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The B-T phase diagram for thin film YBa_2Cu_3O_7-d with B parallel to the superconducting layers has been constructed from GHz transport measurements to 150T. Evidence for a transition from a high T regime dominated by orbital effects, to a low T regime where paramagnetic limiting drives the quenching of superconductivity, is seen. Up to 110T the upper critical field is found to be linear in T and in remarkable agreement with extrapolation of the longstanding result of Welp et al arising from magnetisation measurements to 6T. Beyond this a departure from linear behaviour occurs at T=74K, where a 3D-2D crossover is expected to occur.
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Submitted 29 January, 1999;
originally announced January 1999.
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Magnetoresistance and magnetic breakdown in the quasi-two-dimensional conductors (BEDT-TTF)$_2$MHg(SCN)$_4$[M=K,Rb,Tl]
Authors:
Ross H. McKenzie,
G. J. Athas,
J. S. Brooks,
R. G. Clark,
A. S. Dzurak,
R. Newbury,
R. P. Starrett,
A. Skougarevsky,
M. Tokumoto,
N. Kinoshita,
T. Kinoshita,
Y. Tanaka
Abstract:
The magnetic field dependence of the resistance of (BEDT-TTF)$_2$MHg(SCN)$_4$[M=K,Rb,Tl] in the density-wave phase is explained in terms of a simple model involving magnetic breakdown and a reconstructed Fermi surface. The theory is compared to measurements in pulsed magnetic fields up to 51 T. The value implied for the scattering time is consistent with independent determinations. The energy ga…
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The magnetic field dependence of the resistance of (BEDT-TTF)$_2$MHg(SCN)$_4$[M=K,Rb,Tl] in the density-wave phase is explained in terms of a simple model involving magnetic breakdown and a reconstructed Fermi surface. The theory is compared to measurements in pulsed magnetic fields up to 51 T. The value implied for the scattering time is consistent with independent determinations. The energy gap associated with the density-wave phase is deduced from the magnetic breakdown field. Our results have important implications for the phase diagram.
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Submitted 7 August, 1996;
originally announced August 1996.
