-
Interferometric Single-Shot Parity Measurement in an InAs-Al Hybrid Device
Authors:
Morteza Aghaee,
Alejandro Alcaraz Ramirez,
Zulfi Alam,
Rizwan Ali,
Mariusz Andrzejczuk,
Andrey Antipov,
Mikhail Astafev,
Amin Barzegar,
Bela Bauer,
Jonathan Becker,
Umesh Kumar Bhaskar,
Alex Bocharov,
Srini Boddapati,
David Bohn,
Jouri Bommer,
Leo Bourdet,
Arnaud Bousquet,
Samuel Boutin,
Lucas Casparis,
Benjamin James Chapman,
Sohail Chatoor,
Anna Wulff Christensen,
Cassandra Chua,
Patrick Codd,
William Cole
, et al. (137 additional authors not shown)
Abstract:
The fusion of non-Abelian anyons or topological defects is a fundamental operation in measurement-only topological quantum computation. In topological superconductors, this operation amounts to a determination of the shared fermion parity of Majorana zero modes. As a step towards this, we implement a single-shot interferometric measurement of fermion parity in indium arsenide-aluminum heterostruct…
▽ More
The fusion of non-Abelian anyons or topological defects is a fundamental operation in measurement-only topological quantum computation. In topological superconductors, this operation amounts to a determination of the shared fermion parity of Majorana zero modes. As a step towards this, we implement a single-shot interferometric measurement of fermion parity in indium arsenide-aluminum heterostructures with a gate-defined nanowire. The interferometer is formed by tunnel-coupling the proximitized nanowire to quantum dots. The nanowire causes a state-dependent shift of these quantum dots' quantum capacitance of up to 1 fF. Our quantum capacitance measurements show flux h/2e-periodic bimodality with a signal-to-noise ratio of 1 in 3.7 $μ$s at optimal flux values. From the time traces of the quantum capacitance measurements, we extract a dwell time in the two associated states that is longer than 1 ms at in-plane magnetic fields of approximately 2 T. These results are consistent with a measurement of the fermion parity encoded in a pair of Majorana zero modes that are separated by approximately 3 $μ$m and subjected to a low rate of poisoning by non-equilibrium quasiparticles. The large capacitance shift and long poisoning time enable a parity measurement error probability of 1%.
△ Less
Submitted 2 April, 2024; v1 submitted 17 January, 2024;
originally announced January 2024.
-
InAs-Al Hybrid Devices Passing the Topological Gap Protocol
Authors:
Morteza Aghaee,
Arun Akkala,
Zulfi Alam,
Rizwan Ali,
Alejandro Alcaraz Ramirez,
Mariusz Andrzejczuk,
Andrey E Antipov,
Pavel Aseev,
Mikhail Astafev,
Bela Bauer,
Jonathan Becker,
Srini Boddapati,
Frenk Boekhout,
Jouri Bommer,
Esben Bork Hansen,
Tom Bosma,
Leo Bourdet,
Samuel Boutin,
Philippe Caroff,
Lucas Casparis,
Maja Cassidy,
Anna Wulf Christensen,
Noah Clay,
William S Cole,
Fabiano Corsetti
, et al. (102 additional authors not shown)
Abstract:
We present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation of topological superconductivity and Majorana zero modes. The devices are fabricated from high-mobility two-dimensional electron gases in which quasi-one-dimensional wires are defined by electrostatic gates. These devices enable measurements of local and non-loca…
▽ More
We present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation of topological superconductivity and Majorana zero modes. The devices are fabricated from high-mobility two-dimensional electron gases in which quasi-one-dimensional wires are defined by electrostatic gates. These devices enable measurements of local and non-local transport properties and have been optimized via extensive simulations to ensure robustness against non-uniformity and disorder. Our main result is that several devices, fabricated according to the design's engineering specifications, have passed the topological gap protocol defined in Pikulin et al. [arXiv:2103.12217]. This protocol is a stringent test composed of a sequence of three-terminal local and non-local transport measurements performed while varying the magnetic field, semiconductor electron density, and junction transparencies. Passing the protocol indicates a high probability of detection of a topological phase hosting Majorana zero modes as determined by large-scale disorder simulations. Our experimental results are consistent with a quantum phase transition into a topological superconducting phase that extends over several hundred millitesla in magnetic field and several millivolts in gate voltage, corresponding to approximately one hundred micro-electron-volts in Zeeman energy and chemical potential in the semiconducting wire. These regions feature a closing and re-opening of the bulk gap, with simultaneous zero-bias conductance peaks at both ends of the devices that withstand changes in the junction transparencies. The extracted maximum topological gaps in our devices are 20-60 $μ$eV. This demonstration is a prerequisite for experiments involving fusion and braiding of Majorana zero modes.
△ Less
Submitted 8 March, 2024; v1 submitted 6 July, 2022;
originally announced July 2022.
-
Doubling the mobility of InAs/InGaAs selective area grown nanowires
Authors:
Daria V. Beznasyuk,
Sara Martí-Sánchez,
Jung-Hyun Kang,
Rawa Tanta,
Mohana Rajpalke,
Tomaš Stankevič,
Anna Wulff Christensen,
Maria Chiara Spadaro,
Roberto Bergamaschini,
Nikhil N. Maka,
Christian Emanuel N. Petersen,
Damon J. Carrad,
Thomas Sand Jespersen,
Jordi Arbiol,
Peter Krogstrup
Abstract:
Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics and quantum devices based on III-V semiconductor materials. The potential of high-mobility SAG nanowires however is not yet fully realized, since interfacial roughness, misfit dislocations at the nanowire/substrate interface and non-uniform composition due to material intermixing all scatte…
▽ More
Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics and quantum devices based on III-V semiconductor materials. The potential of high-mobility SAG nanowires however is not yet fully realized, since interfacial roughness, misfit dislocations at the nanowire/substrate interface and non-uniform composition due to material intermixing all scatter electrons. Here, we explore SAG of highly lattice-mismatched InAs nanowires on insulating GaAs(001) substrates and address these key challenges. Atomically smooth nanowire/substrate interfaces are achieved with the use of atomic hydrogen (a-H) as an alternative to conventional thermal annealing for the native oxide removal. The problem of high lattice mismatch is addressed through an In$_x$Ga$_{1-x}$As buffer layer introduced between the InAs transport channel and the GaAs substrate. The Ga-In material intermixing observed in both the buffer layer and the channel is inhibited via careful tuning of the growth temperature. Performing scanning transmission electron microscopy and x-ray diffraction analysis along with low-temperature transport measurements we show that optimized In-rich buffer layers promote high quality InAs transport channels with the field-effect electron mobility over~10000~cm$^2$V$^{-1}$s$^{-1}$. This is twice as high as for non-optimized samples and among the highest reported for InAs selective area grown nanostructures.
△ Less
Submitted 4 February, 2022; v1 submitted 29 March, 2021;
originally announced March 2021.
-
Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure
Authors:
Yu Liu,
Alessandra Luchini,
Sara Martí-Sánchez,
Christian Koch,
Sergej Schuwalow,
Sabbir A. Khan,
Tomaš Stankevič,
Sonia Francoua,
Jose R. L. Mardegan,
Jonas A. Krieger,
Vladimir N. Strocov,
Jochen Stahn,
Carlos A. F. Vaz,
Mahesh Ramakrishnan,
Urs Staub,
Kim Lefmann,
Gabriel Aeppli,
Jordi Arbiol,
Peter Krogstrup
Abstract:
Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field and local proximitized magnetic exchange. In this work, we present lattice matched hybrid epitaxy of semiconductor - ferromagnetic insulator InAs/EuS heterostructures and analyze the atomic-scale structure as well as their electronic and magnetic chara…
▽ More
Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field and local proximitized magnetic exchange. In this work, we present lattice matched hybrid epitaxy of semiconductor - ferromagnetic insulator InAs/EuS heterostructures and analyze the atomic-scale structure as well as their electronic and magnetic characteristics. The Fermi level at the InAs/EuS interface is found to be close to the InAs conduction band and in the bandgap of EuS, thus preserving the semiconducting properties. Both neutron and X-ray reflectivity measurements show that the ferromagnetic component is mainly localized in the EuS thin film with a suppression of the Eu moment in the EuS layer nearest the InAs. Induced moments in the adjacent InAs layers were not detected although our ab initio calculations indicate a small exchange field in the InAs layer. This work presents a step towards realizing high quality semiconductor - ferromagnetic insulator hybrids, which is a critical requirement for development of various quantum and spintronic applications without external magnetic fields.
△ Less
Submitted 19 August, 2019;
originally announced August 2019.
-
Field effect enhancement in buffered quantum nanowire networks
Authors:
Filip Krizek,
Joachim E. Sestoft,
Pavel Aseev,
Sara Marti-Sanchez,
Saulius Vaitiekenas,
Lucas Casparis,
Sabbir A. Khan,
Yu Liu,
Tomas Stankevic,
Alexander M. Whiticar,
Alexandra Fursina,
Frenk Boekhout,
Rene Koops,
Emanuele Uccelli,
Leo P. Kouwenhoven,
Charles M. Marcus,
Jordi Arbiol,
Peter Krogstrup
Abstract:
III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been challenging. Here, we study the potential of selective area growth by molecular beam epitaxy of InAs nanowire networks grown on GaAs-based buffer layers. The buffered geomet…
▽ More
III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been challenging. Here, we study the potential of selective area growth by molecular beam epitaxy of InAs nanowire networks grown on GaAs-based buffer layers. The buffered geometry allows for substantial elastic strain relaxation and a strong enhancement of field effect mobility. We show that the networks possess strong spin-orbit interaction and long phase coherence lengths with a temperature dependence indicating ballistic transport. With these findings, and the compatibility of the growth method with hybrid epitaxy, we conclude that the material platform fulfills the requirements for a wide range of quantum experiments and applications.
△ Less
Submitted 5 April, 2018; v1 submitted 21 February, 2018;
originally announced February 2018.
-
Two-dimensional epitaxial superconductor-semiconductor heterostructures: A platform for topological superconducting networks
Authors:
J. Shabani,
M. Kjaergaard,
H. J. Suominen,
Younghyun Kim,
F. Nichele,
K. Pakrouski,
T. Stankevic,
R. M. Lutchyn,
P. Krogstrup,
R. Feidenhans'l,
S. Kraemer,
C. Nayak,
M. Troyer,
C. M. Marcus,
C. J. Palmstrøm
Abstract:
Progress in the emergent field of topological superconductivity relies on synthesis of new material combinations, combining superconductivity, low density, and spin-orbit coupling (SOC). For example, theory [1-4] indicates that the interface between a one-dimensional (1D) semiconductor (Sm) with strong SOC and a superconductor (S) hosts Majorana modes with nontrivial topological properties [5-8].…
▽ More
Progress in the emergent field of topological superconductivity relies on synthesis of new material combinations, combining superconductivity, low density, and spin-orbit coupling (SOC). For example, theory [1-4] indicates that the interface between a one-dimensional (1D) semiconductor (Sm) with strong SOC and a superconductor (S) hosts Majorana modes with nontrivial topological properties [5-8]. Recently, epitaxial growth of Al on InAs nanowires was shown to yield a high quality S-Sm system with uniformly transparent interfaces [9] and a hard induced gap, indicted by strongly suppressed sub gap tunneling conductance [10]. Here we report the realization of a two-dimensional (2D) InAs/InGaAs heterostructure with epitaxial Al, yielding a planar S-Sm system with structural and transport characteristics as good as the epitaxial wires. The realization of 2D epitaxial S-Sm systems represent a significant advance over wires, allowing extended networks via top-down processing. Among numerous potential applications, this new material system can serve as a platform for complex networks of topological superconductors with gate-controlled Majorana zero modes [1-4]. We demonstrate gateable Josephson junctions and a highly transparent 2D S-Sm interface based on the product of excess current and normal state resistance.
△ Less
Submitted 7 November, 2015; v1 submitted 3 November, 2015;
originally announced November 2015.
-
Ptychography imaging of the phase vortices in the x-ray beam formed by nanofocusing lenses
Authors:
D. Dzhigaev,
U. Lorenz,
R. Kurta,
F. Seiboth,
T. Stankevic,
S. Mickevicius,
A. Singer,
A. Shabalin,
O. Yefanov,
M. N. Strikhanov,
G. Falkenberg,
C. G. Schroer,
R. Feidenhans`l,
I. A. Vartanyants
Abstract:
We present the ptychography reconstruction of the x-ray beam formed by nanofocusing lenses (NFLs) containing a number of phase singularities (vortices) in the vicinity of the focal plane. As a test object Siemens star pattern was used with the finest features of 50 nm for ptychography measurements. The extended ptychography iterative engine (ePIE) algorithm was applied to retrieve both complex ill…
▽ More
We present the ptychography reconstruction of the x-ray beam formed by nanofocusing lenses (NFLs) containing a number of phase singularities (vortices) in the vicinity of the focal plane. As a test object Siemens star pattern was used with the finest features of 50 nm for ptychography measurements. The extended ptychography iterative engine (ePIE) algorithm was applied to retrieve both complex illumination and object functions from the set of diffraction patterns. The reconstruction revealed the focus size of 91.4$\pm$1.1 nm in horizontal and 70$\pm$0.3 nm in vertical direction at full width at half maximum (FWHM). The complex probe function was propagated along the optical axis of the beam revealing the evolution of the phase singularities.
△ Less
Submitted 6 November, 2013;
originally announced November 2013.
