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Showing 1–1 of 1 results for author: Stank, C R

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  1. arXiv:1704.04044  [pdf, other

    cond-mat.mtrl-sci

    The conundrum of relaxation volumes in first-principles calculations of charge defects

    Authors: Anuj Goyal, Kiran Mathew, Richard G. Hennig, Aleksandr Chernatynskiy, Christopher R. Stank, Samuel T. Murphy, David A. Andersson, Simon R. Phillpot, Blas P. Uberuaga

    Abstract: The defect relaxation volumes obtained from density-functional theory (DFT) calculations of charged vacancies and interstitials are much larger than their neutral counterparts, seemingly unphysically large. In this work, we investigate the possible reasons for this and revisit the methods that address the calculation of charged defect structures in periodic DFT. We probe the dependence of the prop… ▽ More

    Submitted 13 April, 2017; originally announced April 2017.