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Memristive Learning Cellular Automata: Theory and Applications
Authors:
Rafailia-Eleni Karamani,
Iosif-Angelos Fyrigos,
Vasileios Ntinas,
Orestis Liolis,
Giorgos Dimitrakopoulos,
Mustafa Altun,
Andrew Adamatzky,
Mircea R. Stan,
Georgios Ch. Sirakoulis
Abstract:
Memristors are novel non volatile devices that manage to combine storing and processing capabilities in the same physical place.Their nanoscale dimensions and low power consumption enable the further design of various nanoelectronic processing circuits and corresponding computing architectures, like neuromorhpic, in memory, unconventional, etc.One of the possible ways to exploit the memristor's ad…
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Memristors are novel non volatile devices that manage to combine storing and processing capabilities in the same physical place.Their nanoscale dimensions and low power consumption enable the further design of various nanoelectronic processing circuits and corresponding computing architectures, like neuromorhpic, in memory, unconventional, etc.One of the possible ways to exploit the memristor's advantages is by combining them with Cellular Automata (CA).CA constitute a well known non von Neumann computing architecture that is based on the local interconnection of simple identical cells forming N-dimensional grids.These local interconnections allow the emergence of global and complex phenomena.In this paper, we propose a hybridization of the CA original definition coupled with memristor based implementation, and, more specifically, we focus on Memristive Learning Cellular Automata (MLCA), which have the ability of learning using also simple identical interconnected cells and taking advantage of the memristor devices inherent variability.The proposed MLCA circuit level implementation is applied on optimal detection of edges in image processing through a series of SPICE simulations, proving its robustness and efficacy.
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Submitted 15 March, 2020;
originally announced March 2020.
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Reservoir Computing based Neural Image Filters
Authors:
Samiran Ganguly,
Yunfei Gu,
Yunkun Xie,
Mircea R. Stan,
Avik W. Ghosh,
Nibir K. Dhar
Abstract:
Clean images are an important requirement for machine vision systems to recognize visual features correctly. However, the environment, optics, electronics of the physical imaging systems can introduce extreme distortions and noise in the acquired images. In this work, we explore the use of reservoir computing, a dynamical neural network model inspired from biological systems, in creating dynamic i…
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Clean images are an important requirement for machine vision systems to recognize visual features correctly. However, the environment, optics, electronics of the physical imaging systems can introduce extreme distortions and noise in the acquired images. In this work, we explore the use of reservoir computing, a dynamical neural network model inspired from biological systems, in creating dynamic image filtering systems that extracts signal from noise using inverse modeling. We discuss the possibility of implementing these networks in hardware close to the sensors.
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Submitted 7 September, 2018;
originally announced September 2018.
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Hardware based Spatio-Temporal Neural Processing Backend for Imaging Sensors: Towards a Smart Camera
Authors:
Samiran Ganguly,
Yunfei Gu,
Mircea R. Stan,
Avik W. Ghosh
Abstract:
In this work we show how we can build a technology platform for cognitive imaging sensors using recent advances in recurrent neural network architectures and training methods inspired from biology. We demonstrate learning and processing tasks specific to imaging sensors, including enhancement of sensitivity and signal-to-noise ratio (SNR) purely through neural filtering beyond the fundamental limi…
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In this work we show how we can build a technology platform for cognitive imaging sensors using recent advances in recurrent neural network architectures and training methods inspired from biology. We demonstrate learning and processing tasks specific to imaging sensors, including enhancement of sensitivity and signal-to-noise ratio (SNR) purely through neural filtering beyond the fundamental limits sensor materials, and inferencing and spatio-temporal pattern recognition capabilities of these networks with applications in object detection, motion tracking and prediction. We then show designs of unit hardware cells built using complementary metal-oxide semiconductor (CMOS) and emerging materials technologies for ultra-compact and energy-efficient embedded neural processors for smart cameras.
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Submitted 22 March, 2018;
originally announced March 2018.
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Tolerating Soft Errors in Processor Cores Using CLEAR (Cross-Layer Exploration for Architecting Resilience)
Authors:
Eric Cheng,
Shahrzad Mirkhani,
Lukasz G. Szafaryn,
Chen-Yong Cher,
Hyungmin Cho,
Kevin Skadron,
Mircea R. Stan,
Klas Lilja,
Jacob A. Abraham,
Pradip Bose,
Subhasish Mitra
Abstract:
We present CLEAR (Cross-Layer Exploration for Architecting Resilience), a first of its kind framework which overcomes a major challenge in the design of digital systems that are resilient to reliability failures: achieve desired resilience targets at minimal costs (energy, power, execution time, area) by combining resilience techniques across various layers of the system stack (circuit, logic, arc…
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We present CLEAR (Cross-Layer Exploration for Architecting Resilience), a first of its kind framework which overcomes a major challenge in the design of digital systems that are resilient to reliability failures: achieve desired resilience targets at minimal costs (energy, power, execution time, area) by combining resilience techniques across various layers of the system stack (circuit, logic, architecture, software, algorithm). This is also referred to as cross-layer resilience. In this paper, we focus on radiation-induced soft errors in processor cores. We address both single-event upsets (SEUs) and single-event multiple upsets (SEMUs) in terrestrial environments. Our framework automatically and systematically explores the large space of comprehensive resilience techniques and their combinations across various layers of the system stack (586 cross-layer combinations in this paper), derives cost-effective solutions that achieve resilience targets at minimal costs, and provides guidelines for the design of new resilience techniques. Our results demonstrate that a carefully optimized combination of circuit-level hardening, logic-level parity checking, and micro-architectural recovery provides a highly cost-effective soft error resilience solution for general-purpose processor cores. For example, a 50x improvement in silent data corruption rate is achieved at only 2.1% energy cost for an out-of-order core (6.1% for an in-order core) with no speed impact. However, (application-aware) selective circuit-level hardening alone, guided by a thorough analysis of the effects of soft errors on application benchmarks, provides a cost-effective soft error resilience solution as well (with ~1% additional energy cost for a 50x improvement in silent data corruption rate).
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Submitted 28 September, 2017;
originally announced September 2017.
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CLEAR: Cross-Layer Exploration for Architecting Resilience - Combining Hardware and Software Techniques to Tolerate Soft Errors in Processor Cores
Authors:
Eric Cheng,
Shahrzad Mirkhani,
Lukasz G. Szafaryn,
Chen-Yong Cher,
Hyungmin Cho,
Kevin Skadron,
Mircea R. Stan,
Klas Lilja,
Jacob A. Abraham,
Pradip Bose,
Subhasish Mitra
Abstract:
We present a first of its kind framework which overcomes a major challenge in the design of digital systems that are resilient to reliability failures: achieve desired resilience targets at minimal costs (energy, power, execution time, area) by combining resilience techniques across various layers of the system stack (circuit, logic, architecture, software, algorithm). This is also referred to as…
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We present a first of its kind framework which overcomes a major challenge in the design of digital systems that are resilient to reliability failures: achieve desired resilience targets at minimal costs (energy, power, execution time, area) by combining resilience techniques across various layers of the system stack (circuit, logic, architecture, software, algorithm). This is also referred to as cross-layer resilience. In this paper, we focus on radiation-induced soft errors in processor cores. We address both single-event upsets (SEUs) and single-event multiple upsets (SEMUs) in terrestrial environments. Our framework automatically and systematically explores the large space of comprehensive resilience techniques and their combinations across various layers of the system stack (586 cross-layer combinations in this paper), derives cost-effective solutions that achieve resilience targets at minimal costs, and provides guidelines for the design of new resilience techniques. We demonstrate the practicality and effectiveness of our framework using two diverse designs: a simple, in-order processor core and a complex, out-of-order processor core. Our results demonstrate that a carefully optimized combination of circuit-level hardening, logic-level parity checking, and micro-architectural recovery provides a highly cost-effective soft error resilience solution for general-purpose processor cores. For example, a 50x improvement in silent data corruption rate is achieved at only 2.1% energy cost for an out-of-order core (6.1% for an in-order core) with no speed impact. However, selective circuit-level hardening alone, guided by a thorough analysis of the effects of soft errors on application benchmarks, provides a cost-effective soft error resilience solution as well (with ~1% additional energy cost for a 50x improvement in silent data corruption rate).
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Submitted 23 June, 2016; v1 submitted 11 April, 2016;
originally announced April 2016.
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Computing with Non-equilibrium Ratchets
Authors:
Mehdi Kabir,
Dincer Unluer,
Lijun Li,
Avik W. Ghosh,
Mircea R. Stan
Abstract:
Electronic ratchets transduce local spatial asymmetries into directed currents in the absence of a global drain bias, by rectifying temporal signals that reside far from thermal equilibrium. We show that the absence of a drain bias can provide distinct energy advantages for computation, specifically, reducing static dissipation in a logic circuit. Since the ratchet functions as a gate voltage-cont…
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Electronic ratchets transduce local spatial asymmetries into directed currents in the absence of a global drain bias, by rectifying temporal signals that reside far from thermal equilibrium. We show that the absence of a drain bias can provide distinct energy advantages for computation, specifically, reducing static dissipation in a logic circuit. Since the ratchet functions as a gate voltage-controlled current source, it also potentially reduces the dynamic dissipation associated with charging/discharging capacitors. In addition, the unique charging mechanism eliminates timing related constraints on logic inputs, in principle allowing for adiabatic charging. We calculate the ratchet currents in classical and quantum limits, and show how a sequence of ratchets can be cascaded to realize universal Boolean logic.
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Submitted 18 March, 2013;
originally announced March 2013.
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Graphene Nanoribbons: from chemistry to circuits
Authors:
Frank Tseng,
Dincer Unluer,
Mircea R. Stan,
Avik W. Ghosh
Abstract:
The Y-chart is a powerful tool for understanding the relationship between various views (behavioral, structural, physical) of a system, at different levels of abstraction, from high-level, architecture and circuits, to low-level, devices and materials. We thus use the Y-chart adapted for graphene to guide the chapter and explore the relationship among the various views and levels of abstraction. W…
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The Y-chart is a powerful tool for understanding the relationship between various views (behavioral, structural, physical) of a system, at different levels of abstraction, from high-level, architecture and circuits, to low-level, devices and materials. We thus use the Y-chart adapted for graphene to guide the chapter and explore the relationship among the various views and levels of abstraction. We start with the innermost level, namely, the structural and chemical view. The edge chemistry of patterned graphene nanoribbons (GNR) lies intermediate between graphene and benzene, and the corresponding strain lifts the degeneracy that otherwise promotes metallicity in bulk graphene. At the same time, roughness at the edges washes out chiral signatures, making the nanoribbon width the principal arbiter of metallicity. The width-dependent conductivity allows the design of a monolithically patterned wide-narrow-wide all graphene interconnect-channel heterostructure. In a three-terminal incarnation, this geometry exhibits superior electrostatics, a correspondingly benign short-channel effect and a reduction in the contact Schottky barrier through covalent bonding. However, the small bandgaps make the devices transparent to band-to-band tunneling. Increasing the gap with width confinement (or other ways to break the sublattice symmetry) is projected to reduce the mobility even for very pure samples, through a fundamental asymptotic constraint on the bandstructure. An analogous trade-off, ultimately between error rate (reliability) and delay (switching speed) can be projected to persist for all graphitic derivatives. Proceeding thus to a higher level, a compact model is presented to capture the complex nanoribbon circuits, culminating in inverter characteristics, design metrics and layout diagrams.
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Submitted 9 May, 2011; v1 submitted 28 April, 2011;
originally announced April 2011.
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Diluted chirality dependence in edge rough graphene nanoribbon field-effect transistors
Authors:
Frank Tseng,
DIncer Unlcer,
Katherine Holcomb,
Mircea R. Stan,
Avik W. Ghosh
Abstract:
We investigate the role of various structural nonidealities on the performance of armchair-edge graphene nanoribbon field effect transistors (GNRFETs). Our results show that edge roughness dilutes the chirality dependence often predicted by theory but absent experimentally. Instead, GNRs are classifiable into wide (semi-metallic) vs narrow (semiconducting) strips, defining thereby the building b…
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We investigate the role of various structural nonidealities on the performance of armchair-edge graphene nanoribbon field effect transistors (GNRFETs). Our results show that edge roughness dilutes the chirality dependence often predicted by theory but absent experimentally. Instead, GNRs are classifiable into wide (semi-metallic) vs narrow (semiconducting) strips, defining thereby the building blocks for wide-narrow-wide all-graphene devices and interconnects.
Small bandgaps limit drain bias at the expense of band-to-band tunneling in GNRFETs. We outline the relation between device performance metrics and non-idealities such as width modulation, width dislocations and surface step, and non-ideality parameters such as roughness amplitude and correlation length.
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Submitted 12 May, 2009; v1 submitted 14 April, 2009;
originally announced April 2009.
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Monolithically Patterned Wide-Narrow-Wide All-Graphene Devices
Authors:
Dincer Unluer,
Frank Tseng,
Avik W. Ghosh,
Mircea R. Stan
Abstract:
We investigate theoretically the performance advantages of all-graphene nanoribbon field-effect transistors (GNRFETs) whose channel and source/drain (contact) regions are patterned monolithically from a two-dimensional single sheet of graphene. In our simulated devices, the source/drain and interconnect regions are composed of wide graphene nanoribbon (GNR) sections that are semimetallic, while th…
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We investigate theoretically the performance advantages of all-graphene nanoribbon field-effect transistors (GNRFETs) whose channel and source/drain (contact) regions are patterned monolithically from a two-dimensional single sheet of graphene. In our simulated devices, the source/drain and interconnect regions are composed of wide graphene nanoribbon (GNR) sections that are semimetallic, while the channel regions consist of narrow GNR sections that open semiconducting bandgaps. Our simulation employs a fully atomistic model of the device, contact and interfacial regions using tight-binding theory. The electronic structures are coupled with a self-consistent three-dimensional Poisson's equation to capture the nontrivial contact electrostatics, along with a quantum kinetic formulation of transport based on non-equilibrium Green's functions (NEGF). Although we only consider a specific device geometry, our results establish several general performance advantages of such monolithic devices (besides those related to fabrication and patterning), namely the improved electrostatics, suppressed short-channel effects, and Ohmic contacts at the narrow-to-wide interfaces.
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Submitted 10 June, 2010; v1 submitted 22 September, 2008;
originally announced September 2008.
