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Right On Time: Ultrafast Charge Separation Before Hybrid Exciton Formation
Authors:
Lukas Gierster,
Olga Turkina,
Jan-Christoph Deinert,
Sesha Vempati,
Elsie Baeta,
Yves Garmshausen,
Stefan Hecht,
Claudia Draxl,
Julia Stähler
Abstract:
Organic/inorganic hybrid systems offer great potential for novel solar cell design combining the tunability of organic chromophore absorption properties with high charge carrier mobilities of inorganic semiconductors. However, often such material combinations do not show the expected performance: while ZnO, for example, basically exhibits all necessary properties for a successful application in li…
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Organic/inorganic hybrid systems offer great potential for novel solar cell design combining the tunability of organic chromophore absorption properties with high charge carrier mobilities of inorganic semiconductors. However, often such material combinations do not show the expected performance: while ZnO, for example, basically exhibits all necessary properties for a successful application in light-harvesting, it was clearly outpaced by TiO$_2$ in terms of charge separation efficiency. The origin of this deficiency has long been debated. This study employs femtosecond time-resolved photoelectron spectroscopy and many-body ab initio calculations to identify and quantify all elementary steps leading to the suppression of charge separation at an exemplary organic/ZnO interface. We demonstrate that charge separation indeed occurs efficiently on ultrafast (350 fs) timescales, but that electrons are recaptured at the interface on a 100 ps timescale and subsequently trapped in a strongly bound (0.7 eV) hybrid exciton state with a lifetime exceeding 5 $μ$s. Thus, initially successful charge separation is followed by delayed electron capture at the interface, leading to apparently low charge separation efficiencies. This finding provides a sufficiently large timeframe for counter-measures in device design to successfully implement specifically ZnO and, moreover, invites material scientists to revisit charge separation in various kinds of previously discarded hybrid systems.
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Submitted 19 June, 2024; v1 submitted 10 July, 2023;
originally announced July 2023.
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$\mathrm{O_2}$ reduction at a DMSO/Cu(111) model battery interface
Authors:
Angelika Demling,
Sarah B. King,
Philip Shushkov,
Julia Stähler
Abstract:
In order to develop a better understanding of electrochemical $\mathrm{O_2}$ reduction in non-aqueous solvents, we apply two-photon photoelectron spectroscopy to probe the dynamics of $\mathrm{O_2}$ reduction at a DMSO/Cu(111) model battery interface. By analyzing the temporal evolution of the photoemission signal, we observe the formation of $\mathrm{O_2^-}$ from a trapped electron state at the D…
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In order to develop a better understanding of electrochemical $\mathrm{O_2}$ reduction in non-aqueous solvents, we apply two-photon photoelectron spectroscopy to probe the dynamics of $\mathrm{O_2}$ reduction at a DMSO/Cu(111) model battery interface. By analyzing the temporal evolution of the photoemission signal, we observe the formation of $\mathrm{O_2^-}$ from a trapped electron state at the DMSO/vacuum interface. We find the vertical binding energy of $\mathrm{O_2^-}$ to be 3.80 $\pm$ 0.05 eV, in good agreement with previous results from electrochemical measurements, but with improved accuracy, potentially serving as a basis for future calculations on the kinetics of electron transfer at electrode interfaces. Modelling the $\mathrm{O_2}$ diffusion through the DMSO layer enables us to quantify the activation energy of diffusion (31 $\pm$ 6 meV), the diffusion constant (1 $\pm$ 1$\cdot 10^{-8}$ cm$^2$/s), and the reaction quenching distance for electron transfer to $\mathrm{O_2}$ in DMSO (12.4 $\pm$ 0.4 $\unicode{x212B}$), a critical value for evaluating possible mechanisms for electrochemical side reactions. These results ultimately will inform the development and optimization of metal-air batteries in non-aqueous solvents.
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Submitted 11 January, 2023; v1 submitted 24 October, 2022;
originally announced October 2022.
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Ultrafast charge carrier and exciton dynamics in an excitonic insulator probed by time-resolved photoemission spectroscopy
Authors:
Selene Mor,
Marc Herzog,
Claude Monney,
Julia Stähler
Abstract:
An excitonic insulator phase is expected to arise from the spontaneous formation of electron-hole pairs (excitons) in semiconductors where the exciton binding energy exceeds the size of the electronic band gap. At low temperature, these ground state excitons stabilize a new phase by condensing at lower energy than the electrons at the valence band top, thereby widening the electronic band gap. The…
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An excitonic insulator phase is expected to arise from the spontaneous formation of electron-hole pairs (excitons) in semiconductors where the exciton binding energy exceeds the size of the electronic band gap. At low temperature, these ground state excitons stabilize a new phase by condensing at lower energy than the electrons at the valence band top, thereby widening the electronic band gap. The envisioned opportunity to explore many-boson phenomena in an excitonic insulator system is triggering a very active debate on how ground state excitons can be experimentally evidenced. Here, we employ a nonequilibrium approach to spectrally disentangle the photoinduced dynamics of an exciton condensate from the entwined signature of the valence band electrons. By means of time-and angle-resolved photoemission spectroscopy of the occupied and unoccupied electronic states, we follow the complementary dynamics of conduction and valence band electrons in the photoexcited low-temperature phase of Ta2 NiSe5 , the hitherto most promising single-crystal candidate to undergo a semiconductor-to-excitonic-insulator phase transition. The photoexcited conduction electrons are found to relax within less than 1 ps. Their relaxation time is inversely proportional to their excess energy, a dependence that we attribute to the reduced screening of Coulomb interaction and the low dimensionality of Ta2NiSe5 . Long after (> 10 ps) the conduction band has emptied, the photoemission intensity below the Fermi energy has not fully recovered the equilibrium value. Notably, this seeming carrier imbalance cannot be rationalized simply by the relaxation of photoexcited electrons and holes across the semiconducting band gap. [...]
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Submitted 1 September, 2022; v1 submitted 30 August, 2022;
originally announced August 2022.
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Dynamic screening of quasiparticles in WS$_2$ monolayers
Authors:
Stefano Calati,
Qiuyang Li,
Xiaoyang Zhu,
Julia Stähler
Abstract:
We unravel the influence of quasiparticle screening in the non-equilibrium exciton dynamics of monolayer WS$_2$. We report pump photon energy-dependent exciton blue and red-shifts from time-resolved-reflectance contrast measurements. Based on a phenomenological model, we isolate the effective impact of excitons and free carriers on the renormalization of the quasi-free particle band gap, exciton b…
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We unravel the influence of quasiparticle screening in the non-equilibrium exciton dynamics of monolayer WS$_2$. We report pump photon energy-dependent exciton blue and red-shifts from time-resolved-reflectance contrast measurements. Based on a phenomenological model, we isolate the effective impact of excitons and free carriers on the renormalization of the quasi-free particle band gap, exciton binding energy and linewidth broadening. By this, our work does not only provide a comprehensive picture of the competing phenomena governing the exciton dynamics in WS$_2$ upon photoexcitation, but also demonstrates that exciton and carrier contributions to dynamic screening of the Coulomb interaction differ significantly.
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Submitted 26 January, 2023; v1 submitted 5 April, 2022;
originally announced April 2022.
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Cooperative RADAR Sensors for the Digital Test Field A9 (KoRA9): Algorithmic Recap and Lessons Learned
Authors:
Sören Kohnert,
Julian Stähler,
Reinhard Stolle,
Florian Geissler
Abstract:
Infrastructure sensing systems in combination with Infrastructure-to-Vehicle communication can be used to enhance sensor data obtained from the perspective of a vehicle, only. This paper presents a system consisting of a radar sensor network installed at the side of the street, together with an Edge Processing Unit to fuse the data of different sensors. Measurements taken by the demonstrator are s…
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Infrastructure sensing systems in combination with Infrastructure-to-Vehicle communication can be used to enhance sensor data obtained from the perspective of a vehicle, only. This paper presents a system consisting of a radar sensor network installed at the side of the street, together with an Edge Processing Unit to fuse the data of different sensors. Measurements taken by the demonstrator are shown, the system architecture is discussed, and some lessons learned are presented.
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Submitted 4 January, 2022;
originally announced January 2022.
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Ultrafast generation and decay of a surface metal
Authors:
Lukas Gierster,
Sesha Vempati,
Julia Stähler
Abstract:
Band bending at semiconductor surfaces induced by chemical do** or electric fields can create metallic surfaces with properties not found in the bulk, such as high electron mobility, magnetism or superconductivity. Optical generation of such metallic surfaces via BB on ultrafast timescales would facilitate a drastic manipulation of the conduction, magnetic and optical properties of semiconductor…
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Band bending at semiconductor surfaces induced by chemical do** or electric fields can create metallic surfaces with properties not found in the bulk, such as high electron mobility, magnetism or superconductivity. Optical generation of such metallic surfaces via BB on ultrafast timescales would facilitate a drastic manipulation of the conduction, magnetic and optical properties of semiconductors for high-speed electronics. Here, we demonstrate the ultrafast generation of a metal at the (10-10) surface of ZnO upon photoexcitation. Compared to hitherto known ultrafast photoinduced semiconductor-to-metal transitions that occur in the bulk of inorganic semiconductors, the metallization of the ZnO surface is launched by 3-4 orders of magnitude lower photon fluxes. Using time- and angle-resolved photoelectron spectroscopy, we show that the phase transition is caused by photoinduced downward surface band bending due to photodepletion of donor-type deep surface defects. At low photon flux, surface-confined excitons are formed. Above a critical exciton density, a Mott transition occurs, leading to a partially filled metallic band below the equilibrium Fermi energy. This process is in analogy to chemical do** of semiconductor surfaces. The discovered mechanism is not material-specific and presents a general route for controlling metallicity confined to semiconductor interfaces on ultrafast timescales.
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Submitted 13 January, 2021; v1 submitted 27 May, 2020;
originally announced May 2020.
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Photoexcited organic molecules $en~route$ to highly efficient autoionization
Authors:
Sesha Vempati,
Lea Bogner,
Clemens Richter,
Jan-Christoph Deinert,
Laura Foglia,
Lukas Gierster,
Julia Stähler
Abstract:
The conversion of optical and electrical energy in novel materials is key to modern optoelectronic and light-harvesting applications. Here, we investigate the equilibration dynamics of photoexcited 2,7-bis(biphenyl-4-yl)-2,7-ditertbutyl-9,9-spirobiuorene (SP6) molecules adsorbed on ZnO(10-10) using femtosecond time-resolved two-photon photoelectron (2PPE) and optical spectroscopy. We find that, af…
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The conversion of optical and electrical energy in novel materials is key to modern optoelectronic and light-harvesting applications. Here, we investigate the equilibration dynamics of photoexcited 2,7-bis(biphenyl-4-yl)-2,7-ditertbutyl-9,9-spirobiuorene (SP6) molecules adsorbed on ZnO(10-10) using femtosecond time-resolved two-photon photoelectron (2PPE) and optical spectroscopy. We find that, after initial ultrafast relaxation on fs and ps timescales, an optically dark state is populated, likely the SP6 triplet (T) state, that undergoes Dexter-type energy transfer ($r_{\mathrm{Dex}} = 1.3~\mathrm{nm}$) and exhibits a long decay time of 0.1 s. Because of this long lifetime a photostationary state with average T-T distances below 2 nm is established at excitation densities in the $10^{20}~\mathrm{cm}^{-2}~\mathrm{s}^{-1}$ range. This large density enables decay by T-T annihilation (TTA) mediating autoionization despite an extremely low TTA rate of $k_{\mathrm{TTA}} = 4.5~10^{-26}~\mathrm{m}^3~\mathrm{s}^{-1}$. The large external quantum efficiency of the autoionization process (up to 15 %) and photocurrent densities in the \mathrm{mA}~\mathrm{cm}^{-2}$ range offer great potential for light-harvesting applications.
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Submitted 11 November, 2019;
originally announced November 2019.
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Impact of electron solvation on ice structures at the molecular scale
Authors:
Cord Bertram,
Philipp Auburger,
Michel Bockstedte,
Julia Stähler,
Uwe Bovensiepen,
Karina Morgenstern
Abstract:
We determine the impact of electron solvation on D$_2$O structures adsorbed on Cu(111) with low temperature scanning tunneling microscopy, two-photon photoemission, and ab initio theory. UV photons generating solvated electrons lead not only to transient, but also to permanent structural changes through the rearrangement of individual molecules. The persistent changes occur near sites with a high…
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We determine the impact of electron solvation on D$_2$O structures adsorbed on Cu(111) with low temperature scanning tunneling microscopy, two-photon photoemission, and ab initio theory. UV photons generating solvated electrons lead not only to transient, but also to permanent structural changes through the rearrangement of individual molecules. The persistent changes occur near sites with a high density of dangling OH groups that facilitate electron solvation. We conclude that energy dissipation during solvation triggers permanent molecular rearrangement via vibrational excitation.
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Submitted 10 September, 2019; v1 submitted 9 September, 2019;
originally announced September 2019.
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Revealing the Competing Contributions of Charge Carriers, Excitons, and Defects to the Non-Equilibrium Optical Properties of ZnO
Authors:
Laura Foglia,
Sesha Vempati,
Boubacar Tanda Bonkano,
Lukas Gierster,
Martin Wolf,
Sergey Sadofev,
Julia Stähler
Abstract:
Due to its wide band gap and high carrier mobility, ZnO is an attractive material for light-harvesting and optoelectronic applications. Its functional efficiency, however, is strongly affected by defect-related in-gap states that open up extrinsic decay channels and modify relaxation timescales. As a consequence, almost every ZnO sample behaves differently, leading to irreproducible or even contra…
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Due to its wide band gap and high carrier mobility, ZnO is an attractive material for light-harvesting and optoelectronic applications. Its functional efficiency, however, is strongly affected by defect-related in-gap states that open up extrinsic decay channels and modify relaxation timescales. As a consequence, almost every ZnO sample behaves differently, leading to irreproducible or even contradicting observations. Here, a complementary set of time-resolved spectroscopies is applied to two ZnO samples of different defect density to disentangle the competing contributions of charge carriers, excitons, and defects to the non-equilibrium dynamics after photoexcitation: Time-resolved photoluminescence, excited state transmission, and electronic sum frequency generation. Remarkably, defects affect the transient optical properties of ZnO across more than eight orders of magnitude in time, starting with photodepletion of normally occupied defect states on femtosecond timescales, followed by the competition of free exciton emission and exciton trap** at defect sites within picoseconds, photoluminescence of defect-bound and free excitons on nanosecond timescales, and deeply trapped holes with microsecond lifetimes. These findings do not only provide the first comprehensive picture of charge and exciton relaxation pathways in ZnO, but also uncover the microscopic origin of previous conflicting observations in this challenging material and thereby offer means of overcoming its difficulties.
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Submitted 15 April, 2019; v1 submitted 11 November, 2018;
originally announced November 2018.
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Uncovering the (un-)occupied electronic structure of a buried hybrid interface
Authors:
S. Vempati,
J. -C. Deinert,
L. Gierster,
L. Bogner,
C. Richter,
N. Mutz,
S. Blumstengel,
A. Zykov,
S. Kowarik,
Y. Garmshausen,
J. Hildebrandt,
S. Hecht,
J. Stähler
Abstract:
The energy level alignment at organic/inorganic (o/i) semiconductor interfaces is crucial for any light-emitting or -harvesting functionality. Essential is the access to both occupied and unoccupied electronic states directly at the interface, which is often deeply buried underneath thick organic films and challenging to characterize. We use several complementary experimental techniques to determi…
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The energy level alignment at organic/inorganic (o/i) semiconductor interfaces is crucial for any light-emitting or -harvesting functionality. Essential is the access to both occupied and unoccupied electronic states directly at the interface, which is often deeply buried underneath thick organic films and challenging to characterize. We use several complementary experimental techniques to determine the electronic structure of p-quinquephenyl pyridine (5P-Py) adsorbed on ZnO(10-10). The parent anchoring group, pyridine, significantly lowers the work function by up to 2.9 eV and causes an occupied in-gap state (IGS) directly below the Fermi level $E_\text{F}$. Adsorption of upright-standing 5P-Py also leads to a strong work function reduction of up to 2.1 eV and to a similar IGS. The latter is then used as an initial state for the transient population of three normally unoccupied molecular levels through optical excitation and, due to its localization right at the o/i interface, provides interfacial sensitivity, even for thick 5P-Py films. We observe two final states above the vacuum level and one bound state at around 2 eV above $E_\text{F}$, which we attribute to the 5P-Py LUMO. By the separate study of anchoring group and organic dye combined with the exploitation of the occupied IGS for selective interfacial photoexcitation this work provides a new pathway for characterizing the electronic structure at buried o/i interfaces.
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Submitted 2 November, 2018;
originally announced November 2018.
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Inhibition of the photoinduced structural phase transition in the excitonic insulator Ta$_2$NiSe$_5$
Authors:
Selene Mor,
Marc Herzog,
Johannes Noack,
Naoyuki Katayama,
Minoru Nohara,
Hide Takagi,
Annette Trunschke,
Takashi Mizokawa,
Claude Monney,
Julia Stähler
Abstract:
Femtosecond time-resolved mid-infrared reflectivity is used to investigate the electron and phonon dynamics occurring at the direct band gap of the excitonic insulator Ta$_2$NiSe$_5$ below the critical temperature of its structural phase transition. We find that the phonon dynamics show a strong coupling to the excitation of free carriers at the Γ point of the Brillouin zone. The optical response…
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Femtosecond time-resolved mid-infrared reflectivity is used to investigate the electron and phonon dynamics occurring at the direct band gap of the excitonic insulator Ta$_2$NiSe$_5$ below the critical temperature of its structural phase transition. We find that the phonon dynamics show a strong coupling to the excitation of free carriers at the Γ point of the Brillouin zone. The optical response saturates at a critical excitation fluence $F_C = 0.30~\pm~0.08$~mJ/cm$^2$ due to optical absorption saturation. This limits the optical excitation density in Ta$_2$NiSe$_5$ so that the system cannot be pumped sufficiently strongly to undergo the structural change to the high-temperature phase. We thereby demonstrate that Ta$_2$NiSe$_5$ exhibits a blocking mechanism when pumped in the near-infrared regime, preventing a nonthermal structural phase transition.
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Submitted 3 April, 2018;
originally announced April 2018.
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Ultrafast Electronic Band Gap Control in an Excitonic Insulator
Authors:
Selene Mor,
Marc Herzog,
Denis Golež,
Philipp Werner,
Martin Eckstein,
Naoyuki Katayama,
Minoru Nohara,
Hide Takagi,
Takashi Mizokawa,
Claude Monney,
Julia Stähler
Abstract:
We report on the nonequilibrium dynamics of the electronic structure of the layered semiconductor Ta$_2$NiSe$_5$ investigated by time- and angle-resolved photoelectron spectroscopy. We show that below the critical excitation density of $F_{C} = 0.2$ mJ cm$^{-2}$, the band gap $narrows$ transiently, while it is $enhanced$ above $F_{C}$. Hartree-Fock calculations reveal that this effect can be expla…
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We report on the nonequilibrium dynamics of the electronic structure of the layered semiconductor Ta$_2$NiSe$_5$ investigated by time- and angle-resolved photoelectron spectroscopy. We show that below the critical excitation density of $F_{C} = 0.2$ mJ cm$^{-2}$, the band gap $narrows$ transiently, while it is $enhanced$ above $F_{C}$. Hartree-Fock calculations reveal that this effect can be explained by the presence of the low-temperature excitonic insulator phase of Ta$_2$NiSe$_5$, whose order parameter is connected to the gap size. This work demonstrates the ability to manipulate the band gap of Ta$_2$NiSe$_5$ with light on the femtosecond time scale.
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Submitted 30 August, 2017; v1 submitted 19 August, 2016;
originally announced August 2016.
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Local Aspects of Hydrogen-Induced Metallization of the ZnO(10$\mathbf{\overline{1}}$0) Surface
Authors:
J. -C. Deinert,
O. T. Hofmann,
M. Meyer,
P. Rinke,
J. Stähler
Abstract:
This study combines surface-sensitive photoemission experiments with density functional theory (DFT) to give a microscopic description of H adsorption-induced modifications of the ZnO(10${\overline{1}}$0) surface electronic structure. We find a complex adsorption behavior caused by a strong coverage dependence of the H adsorption energies: Initially, O--H bond formation is energetically favorable…
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This study combines surface-sensitive photoemission experiments with density functional theory (DFT) to give a microscopic description of H adsorption-induced modifications of the ZnO(10${\overline{1}}$0) surface electronic structure. We find a complex adsorption behavior caused by a strong coverage dependence of the H adsorption energies: Initially, O--H bond formation is energetically favorable and H acting as an electron donor leads to the formation of a charge accumulation layer and to surface metallization. The increase of the number of O--H bonds leads to a reversal in adsorption energies such that Zn--H bonds become favored at sites close to existing O--H bonds, which results in a gradual extenuation of the metallization. The corresponding surface potential changes are localized within a few nanometers both laterally and normal to the surface. This localized character is experimentally corroborated by using sub-surface bound excitons at the ZnO(10${\overline{1}}$0) surface as a local probe. The pronounced and comparably localized effect of small amounts of hydrogen at this surface strongly suggests metallic character of ZnO surfaces under technologically relevant conditions and may, thus, be of high importance for energy level alignment at ZnO-based junctions in general.
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Submitted 22 June, 2015; v1 submitted 17 February, 2015;
originally announced February 2015.
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Localization-dependent charge separation efficiency at an organic/inorganic hybrid interface
Authors:
Laura Foglia,
Lea Bogner,
Martin Wolf,
Julia Stähler
Abstract:
By combining complementary optical techniques, photoluminescence and time-resolved excited state absorption, we achieve a comprehensive picture of the relaxation processes in the organic/inorganic hybrid system SP6/ZnO. We identify two long-lived excited states of the organic molecules of which only the lowest energy one, localized on the sexiphenyl backbone of the molecule, is found to efficien…
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By combining complementary optical techniques, photoluminescence and time-resolved excited state absorption, we achieve a comprehensive picture of the relaxation processes in the organic/inorganic hybrid system SP6/ZnO. We identify two long-lived excited states of the organic molecules of which only the lowest energy one, localized on the sexiphenyl backbone of the molecule, is found to efficiently charge separate to the ZnO conduction band or radiatively recombine. The other state, most likely localized on the spiro-linked biphenyl, relaxes only by intersystem crossing to a long-lived, probably triplet state, thus acting as a sink of the excitation and limiting the charge separation efficiency.
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Submitted 5 January, 2016; v1 submitted 1 December, 2014;
originally announced December 2014.
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Ultrafast exciton formation at the ZnO(10${\overline{\textbf{1}}}$0) surface
Authors:
J. -C. Deinert,
D. Wegkamp,
M. Meyer,
C. Richter,
M. Wolf,
J. Stähler
Abstract:
We study the ultrafast quasiparticle dynamics in and below the ZnO conduction band using femtosecond time-resolved two-photon photoelectron spectroscopy. Above band gap excitation causes hot electron relaxation by electron-phonon scattering down to the Fermi level $E_\text{F}$ followed by ultrafast (200 fs) formation of a surface exciton (SX). Transient screening of the Coulomb interaction reduces…
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We study the ultrafast quasiparticle dynamics in and below the ZnO conduction band using femtosecond time-resolved two-photon photoelectron spectroscopy. Above band gap excitation causes hot electron relaxation by electron-phonon scattering down to the Fermi level $E_\text{F}$ followed by ultrafast (200 fs) formation of a surface exciton (SX). Transient screening of the Coulomb interaction reduces the SX formation probability at high excitation densities near the Mott limit. Located just below the surface, the SX are stable with regard to hydrogen-induced work function modifications and thus the ideal prerequisite for resonant energy transfer applications.
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Submitted 30 September, 2014;
originally announced September 2014.
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Instantaneous band gap collapse in photoexcited monoclinic VO$_2$ due to photocarrier do**
Authors:
Daniel Wegkamp,
Marc Herzog,
Lede Xian,
Matteo Gatti,
Pierluigi Cudazzo,
Christina L. McGahan,
Robert E. Marvel,
Richard F. Haglund Jr.,
Angel Rubio,
Martin Wolf,
Julia Stähler
Abstract:
Using femtosecond time-resolved photoelectron spectroscopy we demonstrate that photoexcitation transforms monoclinic VO$_2$ quasi-instantaneously into a metal. Thereby, we exclude an 80 femtosecond structural bottleneck for the photoinduced electronic phase transition of VO$_2$. First-principles many-body perturbation theory calculations reveal a high sensitivity of the VO$_2$ bandgap to variati…
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Using femtosecond time-resolved photoelectron spectroscopy we demonstrate that photoexcitation transforms monoclinic VO$_2$ quasi-instantaneously into a metal. Thereby, we exclude an 80 femtosecond structural bottleneck for the photoinduced electronic phase transition of VO$_2$. First-principles many-body perturbation theory calculations reveal a high sensitivity of the VO$_2$ bandgap to variations of the dynamically screened Coulomb interaction, supporting a fully electronically driven isostructral insulator-to-metal transition. We thus conclude that the ultrafast band structure renormalization is caused by photoexcitation of carriers from localized V 3d valence states, strongly changing the screening \emph{before} significant hot-carrier relaxation or ionic motion has occurred.
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Submitted 10 October, 2014; v1 submitted 14 August, 2014;
originally announced August 2014.
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Pressure dependent relaxation in the photo-excited Mott insulator ETF2TCNQ: Influence of hop** and correlations on quasiparticle recombination rates
Authors:
M. Mitrano,
G. Cotugno,
S. R. Clark,
R. Singla,
S. Kaiser,
J. Staehler,
R. Beyer,
M. Dressel,
L. Baldassarre,
D. Nicoletti,
A. Perucchi,
T. Hasegawa,
H. Okamoto,
D. Jaksch,
A. Cavalleri
Abstract:
Femtosecond relaxation of photo-excited quasiparticles in the one dimensional Mott insulator ET-F2TCNQ are measured as a function of external pressure, which is used to tune the electronic structure. By fitting the static optical properties and measuring femtosecond decay times at each pressure value, we correlate the relaxation rates with the electronic bandwidth t and on the intersite correlatio…
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Femtosecond relaxation of photo-excited quasiparticles in the one dimensional Mott insulator ET-F2TCNQ are measured as a function of external pressure, which is used to tune the electronic structure. By fitting the static optical properties and measuring femtosecond decay times at each pressure value, we correlate the relaxation rates with the electronic bandwidth t and on the intersite correlation energy V. The scaling of relaxation times with microscopic parameters is different than for metals and semiconductors. The competition between localization and delocalization of the Mott-Hubbard exciton dictates the efficiency of the decay, as exposed by a fit based on the solution of the time-dependent extended Hubbard Hamiltonian.
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Submitted 23 February, 2015; v1 submitted 9 August, 2013;
originally announced August 2013.
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Ultrafast changes in lattice symmetry probed by coherent phonons
Authors:
Simon Wall,
Daniel Wegkamp,
Laura Foglia,
Joyeeta Nag,
Richard F. Haglund Jr.,
Julia Staehler,
Martin Wolf
Abstract:
The electronic and structural properties of a material are strongly determined by its symmetry. Changing the symmetry via a photoinduced phase transition offers new ways to manipulate material properties on ultrafast timescales. However, in order to identify when and how fast these phase transitions occur, methods that can probe the symmetry change in the time domain are required. We show that a t…
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The electronic and structural properties of a material are strongly determined by its symmetry. Changing the symmetry via a photoinduced phase transition offers new ways to manipulate material properties on ultrafast timescales. However, in order to identify when and how fast these phase transitions occur, methods that can probe the symmetry change in the time domain are required. We show that a time-dependent change in the coherent phonon spectrum can probe a change in symmetry of the lattice potential, thus providing an all-optical probe of structural transitions. We examine the photoinduced structural phase transition in VO2 and show that, above the phase transition threshold, photoexcitation completely changes the lattice potential on an ultrafast timescale. The loss of the equilibrium-phase phonon modes occurs promptly, indicating a non-thermal pathway for the photoinduced phase transition, where a strong perturbation to the lattice potential changes its symmetry before ionic rearrangement has occurred.
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Submitted 25 July, 2012; v1 submitted 7 December, 2010;
originally announced December 2010.
