Showing 1–29 of 29 results for author: Stach, E

Broadband Light Harvesting from Scalable Two-Dimensional Semiconductor Heterostructures

Authors: Da Lin, Jason Lynch, Sudong Wang, Zekun Hu, Rajeev Kumar Rai, Huairuo Zhang, Chen Chen, Shalini Kumari, Eric Stach, Albert V. Davydov, Joan M. Redwing, Deep Jariwala

Abstract: Broadband absorption in the visible spectrum is essential in optoelectronic applications that involve power conversion such as photovoltaics and photocatalysis. Most ultrathin broadband absorbers use parasitic plasmonic structures that maximize absorption using surface plasmons and/or Fabry-Perot cavities, which limits the weight efficiency of the device. Here, we show the theoretical and experime… ▽ More Broadband absorption in the visible spectrum is essential in optoelectronic applications that involve power conversion such as photovoltaics and photocatalysis. Most ultrathin broadband absorbers use parasitic plasmonic structures that maximize absorption using surface plasmons and/or Fabry-Perot cavities, which limits the weight efficiency of the device. Here, we show the theoretical and experimental realization of an unpatterned/planar semiconductor thin-film absorber based on monolayer transition metal dichalcogenides (TMDCs). We experimentally demonstrate an average total absorption in the visible range (450 nm - 700 nm) of > 70% using > 4 nm of semiconductor absorbing materials scalable over large areas with vapor phase growth techniques. Our analysis suggests that a power conversion efficiency (PCE) of 15.54% and a specific power > 300 W g^-1 may be achieved in a photovoltaic cell based on this metamaterial absorber. △ Less

Submitted 6 July, 2024; originally announced July 2024.

Periodically Poled Aluminum Scandium Nitride Bulk Acoustic Wave Resonators and Filters for Communications in the 6G Era

Authors: Izhar, M. M. A. Fiagbenu, S. Yao, X. Du, P. Musavigharavi, Y. Deng, J. Leathersich, C. Moe, A. Kochhar, E. A. Stach, R. Vetury, R. H. Olsson III

Abstract: Bulk Acoustic Wave (BAW) filters find applications in radio frequency (RF) communication systems for Wi-Fi, 3G, 4G, and 5G networks. In the beyond-5G (potential 6G) era, high frequency bands (>8 GHz) are expected to require resonators with high-quality factor (Q) and electromechanical coupling (k_t^2) to form filters with low insertion loss and high selectivity. However, both the Q and k_t^2 of re… ▽ More Bulk Acoustic Wave (BAW) filters find applications in radio frequency (RF) communication systems for Wi-Fi, 3G, 4G, and 5G networks. In the beyond-5G (potential 6G) era, high frequency bands (>8 GHz) are expected to require resonators with high-quality factor (Q) and electromechanical coupling (k_t^2) to form filters with low insertion loss and high selectivity. However, both the Q and k_t^2 of resonator devices formed in traditional uniform polarization piezoelectric films of aluminum nitride (AlN) and aluminum scandium nitride (AlScN) decrease when scaled beyond 8 GHz. In this work, we utilized 4-layer AlScN periodically poled piezoelectric films (P3F) to construct high frequency (~17-18 GHz) resonators and filters. The resonator performance is studied over a range of device geometries, with the best resonator achieving a k_t^2 of 11.8% and a Q_p of 236.6 at the parallel resonance frequency (fp) of 17.9 GHz. These resulting figures of merit are ((FoM)_1=(k_t^2 Q)_p and (FoM_2=f_p(FoM)_1x10^-9) ) 27.9 and 500 respectively. These and the k_t^2 are significantly higher than previously reported An/AlScN-based resonators operating at similar frequencies. Fabricated 3-element and 6-element filters formed from these resonators demonstrated low insertion losses (IL) of 1.86 dB and 3.25 dB, and -3 dB bandwidths (BW) of 680 MHz (fractional BW of 3.9%) and 590 MHz (fractional BW of 3.3%) at ~17.4 GHz center frequency. The 3-element and 6-element filters achieved excellent linearity with in-band input third-order intercept point (IIP3) values of +36 dBm and +40 dBm, respectively, which are significantly higher than previously reported acoustic filters operating at similar frequencies. △ Less

Submitted 24 May, 2024; originally announced June 2024.

Multi-State, Ultra-thin, BEOL-Compatible AlScN Ferroelectric Diodes

Authors: Kwan-Ho Kim, Zirun Han, Yinuo Zhang, Pariasadat Musavigharavi, Jeffrey Zheng, Dhiren K. Pradhan, Eric A. Stach, Roy H. Olsson III, Deep Jariwala

Abstract: The growth in data generation necessitates efficient data processing technologies to address the von Neumann bottleneck in conventional computer architecture. Memory-driven computing, which integrates non-volatile memory (NVM) devices in a 3D stack, is gaining attention, with CMOS back-end-of-line (BEOL) compatible ferroelectric (FE) diodes being ideal due to their two-terminal design and inherent… ▽ More The growth in data generation necessitates efficient data processing technologies to address the von Neumann bottleneck in conventional computer architecture. Memory-driven computing, which integrates non-volatile memory (NVM) devices in a 3D stack, is gaining attention, with CMOS back-end-of-line (BEOL) compatible ferroelectric (FE) diodes being ideal due to their two-terminal design and inherently selector-free nature, facilitating high-density crossbar arrays. Here, we demonstrate BEOL-compatible, high-performance FE-diodes scaled to 5, 10, and 20 nm FE Al0.72Sc0.28N/Al0.64Sc0.36N films. Through interlayer (IL) engineering, we show substantial improvements in the ON/OFF ratios (>166 times) and rectification ratios (>176 times) in these scaled devices. The superlative characteristics also enables 5-bit multi-state operation with a stable retention. We also experimentally and theoretically demonstrate the counterintuitive result that the inclusion of an IL can lead to a decrease in the ferroelectric switching voltage of the device. An in-depth analysis into the device transport mechanisms is performed, and our compact model aligns seamlessly with the experimental results. Our results suggest the possibility of using scaled AlxSc1-xN FE-diodes for high performance, low-power, embedded NVM. △ Less

Submitted 18 March, 2024; originally announced March 2024.

Epitaxial growth and magnetic properties of kagome metal FeSn/elemental ferromagnet heterostructures

Authors: Prajwal M. Laxmeesha, Tessa D. Tucker, Rajeev Kumar Rai, Shuchen Li, Myoung-Woo Yoo, Eric A. Stach, Axel Hoffmann, Steven J. May

Abstract: Binary kagome compounds TmXn (T = Mn, Fe, Co; X = Sn, Ge; m:n = 3:1, 3:2, 1:1) have garnered recent interest owing to the presence of both topological band crossings and flat bands arising from the geometry of the metal-site kagome lattice. To exploit these electronic features for potential applications in spintronics, the growth of high quality heterostructures is required. Here we report the syn… ▽ More Binary kagome compounds TmXn (T = Mn, Fe, Co; X = Sn, Ge; m:n = 3:1, 3:2, 1:1) have garnered recent interest owing to the presence of both topological band crossings and flat bands arising from the geometry of the metal-site kagome lattice. To exploit these electronic features for potential applications in spintronics, the growth of high quality heterostructures is required. Here we report the synthesis of Fe/FeSn and Co/FeSn bilayers on Al2O3 substrates using molecular beam epitaxy to realize heterointerfaces between elemental ferromagnetic metals and antiferromagnetic kagome metals. Structural characterization using high-resolution X-ray diffraction, reflection high-energy electron diffraction, and electron microscopy reveals the FeSn films are flat and epitaxial. Rutherford backscattering spectroscopy was used to confirm the stoichiometric window where the FeSn phase is stabilized, while transport and magnetometry measurements were conducted to verify metallicity and magnetic ordering in the films. Exchange bias was observed, confirming the presence of antiferromagnetic order in the FeSn layers, paving the way for future studies of magnetism in kagome heterostructures and potential integration of these materials into devices. △ Less

Submitted 21 January, 2024; originally announced January 2024.

Comments: The following article has been submitted to the Journal of Applied Physics

Giant Optical Anisotropy in 2D Metal-Organic Chalcogenates

Authors: Bongjun Choi, Kiyoung Jo, Mahfujur Rahaman, Adam Alfieri, Jason Lynch, Greg K. Pribil, Hyeongjun Koh, Eric A. Stach, Deep Jariwala

Abstract: Optical anisotropy is a fundamental attribute of some crystalline materials and is quantified via birefringence. A birefringent crystal not only gives rise to asymmetrical light propagation but also attenuation along two distinct polarizations, a phenomenon called linear dichroism (LD). Two-dimensional (2D) layered materials with high in- and out-of-plane anisotropy have garnered interest in this… ▽ More Optical anisotropy is a fundamental attribute of some crystalline materials and is quantified via birefringence. A birefringent crystal not only gives rise to asymmetrical light propagation but also attenuation along two distinct polarizations, a phenomenon called linear dichroism (LD). Two-dimensional (2D) layered materials with high in- and out-of-plane anisotropy have garnered interest in this regard. Mithrene, a 2D metal-organic chalcogenate (MOCHA) compound, exhibits strong excitonic resonances due to its naturally occurring multi-quantum well (MQW) structure and in-plane anisotropic response in the blue wavelength (~400-500 nm) regime. The MQW structure and the large refractive indices of mithrene allow the hybridization of the excitons with photons to form self-hybridized exciton-polaritons in mithrene crystals with appropriate thicknesses. Here, we report the giant birefringence (~1.01) and tunable in-plane anisotropic response of mithrene, which stem from its low symmetry crystal structure and unique excitonic properties. We show that the LD in mithrene can be tuned by leveraging the anisotropic exciton-polariton formation via the cavity coupling effect exhibiting giant in-plane LD (~77.1%) at room temperature. Our results indicate that mithrene is an ideal polaritonic birefringent material for polarization-sensitive nanophotonic applications in the short wavelength regime. △ Less

Submitted 3 April, 2024; v1 submitted 31 December, 2023; originally announced January 2024.

Non-Volatile Control of Valley Polarized Emission in 2D WSe2-AlScN Heterostructures

Authors: Simrjit Singh, Kwan-Ho Kim, Kiyoung Jo, Pariasadat Musavigharavi, Bumho Kim, Jeffrey Zheng, Nicholas Trainor, Chen Chen, Joan M. Redwing, Eric A Stach, Roy H Olsson III, Deep Jariwala

Abstract: Achieving robust and electrically controlled valley polarization in monolayer transition metal dichalcogenides (ML-TMDs) is a frontier challenge for realistic valleytronic applications. Theoretical investigations show that integration of 2D materials with ferroelectrics is a promising strategy; however, its experimental demonstration has remained elusive. Here, we fabricate ferroelectric field-eff… ▽ More Achieving robust and electrically controlled valley polarization in monolayer transition metal dichalcogenides (ML-TMDs) is a frontier challenge for realistic valleytronic applications. Theoretical investigations show that integration of 2D materials with ferroelectrics is a promising strategy; however, its experimental demonstration has remained elusive. Here, we fabricate ferroelectric field-effect transistors using a ML-WSe2 channel and a AlScN ferroelectric dielectric, and experimentally demonstrate efficient tuning as well as non-volatile control of valley polarization. We measured a large array of transistors and obtained a maximum valley polarization of ~27% at 80 K with stable retention up to 5400 secs. The enhancement in the valley polarization was ascribed to the efficient exciton-to-trion (X-T) conversion and its coupling with an out-of-plane electric field, viz. the quantum-confined Stark effect. This changes the valley depolarization pathway from strong exchange interactions to slow spin-flip intervalley scattering. Our research demonstrates a promising approach for achieving non-volatile control over valley polarization and suggests new design principles for practical valleytronic devices. △ Less

Submitted 14 November, 2023; originally announced November 2023.

Comments: Manuscript (22 pages and 5 figures), supporting information

Scalable and Stable Ferroelectric Non-Volatile Memory at > 500 $^\circ$C

Authors: Dhiren K. Pradhan, David C. Moore, Gwangwoo Kim, Yunfei He, Pariasadat Musavigharavi, Kwan-Ho Kim, Nishant Sharma, Zirun Han, Xingyu Du, Venkata S. Puli, Eric A. Stach, W. Joshua Kennedy, Nicholas R. Glavin, Roy H. Olsson III, Deep Jariwala

Abstract: Non-volatile memory (NVM) devices that reliably operate at temperatures above 300 $^\circ$C are currently non-existent and remains a critically unmet challenge in the development of high-temperature (T) resilient electronics, necessary for many emerging, complex computing and sensing in harsh environments. Ferroelectric Al$_x$Sc$_{1-x}$N exhibits strong potential for utilization in NVM devices ope… ▽ More Non-volatile memory (NVM) devices that reliably operate at temperatures above 300 $^\circ$C are currently non-existent and remains a critically unmet challenge in the development of high-temperature (T) resilient electronics, necessary for many emerging, complex computing and sensing in harsh environments. Ferroelectric Al$_x$Sc$_{1-x}$N exhibits strong potential for utilization in NVM devices operating at very high temperatures (> 500 $^\circ$C) given its stable and high remnant polarization (PR) above 100 $μ$C/cm$^2$ with demonstrated ferroelectric transition temperature (TC) > 1000 $^\circ$C. Here, we demonstrate an Al$_{0.68}$Sc$_{0.32}$N ferroelectric diode based NVM device that can reliably operate with clear ferroelectric switching up to 600 $^\circ$C with distinguishable On and Off states. The coercive field (EC) from the Pulsed I-V measurements is found to be -5.84 (EC-) and +5.98 (EC+) (+/- 0.1) MV/cm at room temperature (RT) and found to decrease with increasing temperature up to 600 $^\circ$C. The devices exhibit high remnant polarizations (> 100 $μ$C/cm$^2$) which are stable at high temperatures. At 500 $^\circ$C, our devices show 1 million read cycles and stable On-Off ratio above 1 for > 6 hours. Finally, the operating voltages of our AlScN ferrodiodes are < 15 V at 600 $^\circ$C which is well matched and compatible with Silicon Carbide (SiC) based high temperature logic technology, thereby making our demonstration a major step towards commercialization of NVM integrated high-T computers. △ Less

Submitted 8 September, 2023; originally announced September 2023.

Comments: MS and SI

Ultra-fast Vacancy Migration: A Novel Approach for Synthesizing Sub-10 nm Crystalline Transition Metal Dichalcogenide Nanocrystals

Authors: Pawan Kumar, Jiazheng Chen, Andrew C. Meng, Wei-Chang D. Yang, Surendra B. Anantharaman, James P. Horwath, Juan C. Idrobo, Himani Mishra, Yuanyue Liu, Albert V. Davydov, Eric A. Stach, Deep Jariwala

Abstract: Two-dimensional materials, such as transition metal dichalcogenides (TMDCs), have the potential to revolutionize the field of electronics and photonics due to their unique physical and structural properties. This research presents a novel method for synthesizing crystalline TMDCs crystals with < 10 nm size using ultra-fast migration of vacancies at elevated temperatures. Through in-situ and ex-sit… ▽ More Two-dimensional materials, such as transition metal dichalcogenides (TMDCs), have the potential to revolutionize the field of electronics and photonics due to their unique physical and structural properties. This research presents a novel method for synthesizing crystalline TMDCs crystals with < 10 nm size using ultra-fast migration of vacancies at elevated temperatures. Through in-situ and ex-situ processing and using atomic-level characterization techniques, we analyze the shape, size, crystallinity, composition, and strain distribution of these nanocrystals. These nanocrystals exhibit electronic structure signatures that differ from the 2D bulk i.e., uniform mono and multilayers. Further, our in-situ, vacuum-based synthesis technique allows observation and comparison of defect and phase evolution in these crystals formed under van der Waals heterostructure confinement versus unconfined conditions. Overall, this research demonstrates a solid-state route to synthesizing uniform nanocrystals of TMDCs and lays the foundation for materials science in confined 2D spaces under extreme conditions. △ Less

Submitted 10 July, 2023; originally announced July 2023.

Comments: MS+SI

Wafer-scale growth of two-dimensional, phase-pure InSe

Authors: Seunguk Song, Sungho Jeon, Mahfujur Rahaman, Jason Lynch, Pawan Kumar, Srikrishna Chakravarthi, Gwangwoo Kim, Xingyu Du, Eric Blanton, Kim Kisslinger, Michael Snure, Nicholas R. Glavin, Eric A. Stach, Roy H. Olsson, Deep Jariwala

Abstract: Two-dimensional (2D) indium monoselenide (InSe) has attracted significant attention as a III-VI two-dimensional semiconductor (2D) with a combination of favorable attributes from III-V semiconductors as well as van der Waals 2D transition metal dichalcogenides. Nevertheless, the large-area synthesis of phase-pure 2D InSe remains unattained due to the complexity of the binary In-Se system and the d… ▽ More Two-dimensional (2D) indium monoselenide (InSe) has attracted significant attention as a III-VI two-dimensional semiconductor (2D) with a combination of favorable attributes from III-V semiconductors as well as van der Waals 2D transition metal dichalcogenides. Nevertheless, the large-area synthesis of phase-pure 2D InSe remains unattained due to the complexity of the binary In-Se system and the difficulties in promoting lateral growth. Here, we report the first polymorph-selective synthesis of epitaxial 2D InSe by metal-organic chemical deposition (MOCVD) over 2 inch diameter sapphire wafers. We achieve thickness-controlled, layer-by-layer epitaxial growth of InSe on c-plane sapphire via dynamic pulse control of Se/In flux ratio. The layer-by-layer growth allows thickness control over wafer scale with tunable optical properties comparable to bulk crystals. Finally, the gate-tunable electrical transport suggests that MOCVD-grown InSe could be a potential channel material for back-end-of-line integration in logic transistors with field-effect mobility comparable to single-crystalline flakes. △ Less

Submitted 4 March, 2023; originally announced March 2023.

Comments: MS + SI

Surface Rearrangement and Evaporation Kinetics of Supported Gold Nanoparticle Catalysts

Authors: James P. Horwath, Colin Lehman-Chong, Aleksandra Vojvodic, Eric A. Stach

Abstract: Heterogeneous catalysts consisting of supported metallic nanoparticles typically derive exceptional catalytic activity from their large proportion of under-coordinated surface sites which promote adsorption of reactant molecules. Simultaneously, these high energy surface configurations are unstable, leading to nanoparticle growth or degradation, and eventually a loss of catalytic activity. Surface… ▽ More Heterogeneous catalysts consisting of supported metallic nanoparticles typically derive exceptional catalytic activity from their large proportion of under-coordinated surface sites which promote adsorption of reactant molecules. Simultaneously, these high energy surface configurations are unstable, leading to nanoparticle growth or degradation, and eventually a loss of catalytic activity. Surface morphology of catalytic nanoparticles is paramount to catalytic activity, selectivity, as well as degradation rates, however, it is well-known that harsh reaction conditions can cause the surface structure to change. Still, limited research has focused on understanding the link between nanoparticle surface facets and degradation rates or mechanisms. Here, we study a model Au supported catalyst system over a range of temperatures using a combination of \textit{in situ} Transmission Electron Microscopy, kinetic Monte Carlo simulations, and density functional theory calculations to establish an atomistic picture of how variations in surface structures and atomic coordination environments lead to shifting evolution mechanisms as a function of temperature. By combining experimental results, which yield direct observation of dynamic shape changes and particle evaporation rates, with computational techniques, which enable understanding the fundamental thermodynamics and kinetics of nanoparticle evolution, we illustrate a two-step evolution mechanism in which mobile adatoms form through desorption from low-coordination facets and subsequently evaporate off the particle surface. By understanding the role of temperature in the competition between surface diffusion and evaporation, we are able to show how individual atomic movements lead to particle-scale morphological changes, and rationalize why evaporation rates vary between particles in a system of nearly identical nanoparticles. △ Less

Submitted 30 September, 2022; originally announced September 2022.

High Density, Localized Quantum Emitters in Strained 2D Semiconductors

Authors: Gwangwoo Kim, Hyong Min Kim, Pawan Kumar, Mahfujur Rahaman, Christopher E. Stevens, Jonghyuk Jeon, Kiyoung Jo, Kwan-Ho Kim, Nicholas Trainor, Haoyue Zhu, Byeong-Hyeok Sohn, Eric A. Stach, Joshua R. Hendrickson, Nicholas R Glavin, Joonki Suh, Joan M. Redwing, Deep Jariwala

Abstract: Two-dimensional chalcogenide semiconductors have recently emerged as a host material for quantum emitters of single photons. While several reports on defect and strain-induced single photon emission from 2D chalcogenides exist, a bottom-up, lithography-free approach to producing a high density of emitters remains elusive. Further, the physical properties of quantum emission in the case of strained… ▽ More Two-dimensional chalcogenide semiconductors have recently emerged as a host material for quantum emitters of single photons. While several reports on defect and strain-induced single photon emission from 2D chalcogenides exist, a bottom-up, lithography-free approach to producing a high density of emitters remains elusive. Further, the physical properties of quantum emission in the case of strained 2D semiconductors are far from being understood. Here, we demonstrate a bottom-up, scalable, and lithography-free approach to creating large areas of localized emitters with high density (~150 emitters/um2) in a WSe2 monolayer. We induce strain inside the WSe2 monolayer with high spatial density by conformally placing the WSe2 monolayer over a uniform array of Pt nanoparticles with a size of 10 nm. Cryogenic, time-resolved, and gate-tunable luminescence measurements combined with near-field luminescence spectroscopy suggest the formation of localized states in strained regions that emit single photons with a high spatial density. Our approach of using a metal nanoparticle array to generate a high density of strained quantum emitters opens a new path towards scalable, tunable, and versatile quantum light sources. △ Less

Submitted 1 April, 2022; originally announced April 2022.

Comments: 45 pages, 20 figures (5 main figures, 15 supporting figures)

Journal ref: ACS Nano, 2022

Reconfigurable Compute-In-Memory on Field-Programmable Ferroelectric Diodes

Authors: Xiwen Liu, John Ting, Yunfei He, Merrilyn Mercy Adzo Fiagbenu, Jeffrey Zheng, Dixiong Wang, Jonathan Frost, Pariasadat Musavigharavi, Giovanni Esteves, Kim Kisslinger, Surendra B. Anantharaman, Eric A. Stach, Roy H. Olsson III, Deep Jariwala

Abstract: The deluge of sensors and data generating devices has driven a paradigm shift in modern computing from arithmetic-logic centric to data centric processing. At a hardware level, this presents an urgent need to integrate dense, high-performance and low-power memory units with Si logic-processor units. However, data-heavy problems such as search and pattern matching also require paradigm changing inn… ▽ More The deluge of sensors and data generating devices has driven a paradigm shift in modern computing from arithmetic-logic centric to data centric processing. At a hardware level, this presents an urgent need to integrate dense, high-performance and low-power memory units with Si logic-processor units. However, data-heavy problems such as search and pattern matching also require paradigm changing innovations at the circuit and architecture level to enable compute in memory (CIM) operations. CIM architectures that combine data storage yet concurrently offer low-delay and small footprint are highly sought after but have not been realized. Here, we present Aluminum Scandium Nitride (AlScN) ferroelectric diode (FeD) memristor devices that allow for storage, search and neural network-based pattern recognition in a transistor-free architecture. Our devices can be directly integrated on top of Si processors in a scalable, back-end-of-line process. We leverage the field-programmability, non-volatility and non-linearity of FeDs to demonstrated circuit blocks that can support search operations in-situ memory with search delay times < 0.1 ns and a cell footprint < 0.12 um^2. In addition, we demonstrate matrix multiplication operations with 4-bit operation of the FeDs. Our results highlight FeDs as promising candidates for fast, efficient, and multifunctional CIM platforms. △ Less

Submitted 10 February, 2022; originally announced February 2022.

Scalable CMOS-BEOL compatible AlScN/2D Channel FE-FETs

Authors: Kwan-Ho Kim, Seyong Oh, Merrilyn Mercy Adzo Fiagbenu, Jeffrey Zheng, Pariasadat Musavigharavi, Pawan Kumar, Nicholas Trainor, Areej Aljarb, Yi Wan, Hyong Min Kim, Keshava Katti, Zichen Tang, Vincent C. Tung, Joan Redwing, Eric A. Stach, Roy H. Olsson III, Deep Jariwala

Abstract: Intimate integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurrently with enhanced energy efficiency in big-data applications such as artificial intelligence. Despite decades of efforts, reliable, compact, energy efficient and scalable memory devices are elusive. Ferroelectric Field… ▽ More Intimate integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurrently with enhanced energy efficiency in big-data applications such as artificial intelligence. Despite decades of efforts, reliable, compact, energy efficient and scalable memory devices are elusive. Ferroelectric Field Effect Transistors (FE-FETs) are a promising candidate but their scalability and performance in a back-end-of-line (BEOL) process remain unattained. Here, we present scalable BEOL compatible FE-FETs using two-dimensional (2D) MoS2 channel and AlScN ferroelectric dielectric. We have fabricated a large array of FE-FETs with memory windows larger than 7.8 V, ON/OFF ratios of greater than 10^7, and ON current density greater than 250 uA/um, all at ~80 nm channel lengths. Our devices show stable retention up to 20000 secs and endurance up to 20000 cycles in addition to 4-bit pulse programmable memory features thereby opening a path towards scalable 3D hetero-integration of 2D semiconductor memory with Si CMOS logic. △ Less

Submitted 6 January, 2022; originally announced January 2022.

Scalable synthesis of 2D van der Waals superlattices

Authors: Michael J. Motala, Xiang Zhang, Pawan Kumar, Eliezer F. Oliveira, Anna Benton, Paige Miesle, Rahul Rao, Peter R. Stevenson, David Moore, Adam Alfieri, Jason Lynch, Guanhui Gao, Sijie Ma, Hanyu Zhu, Zhe Wang, Ivan Petrov, Eric A. Stach, W. Joshua Kennedy, Shiva Vengala, James M. Tour, Douglas S. Galvao, Deep Jariwala, Christopher Muratore, Michael Snure, Pulickel M. Ajayan , et al. (1 additional authors not shown)

Abstract: Heterostructure materials form the basis of much of modern electronics, from transistors to lasers and light-emitting diodes. Recent years have seen a renewed focus on creating heterostructures through the vertical integration of two-dimensional materials, including graphene, hexagonal boron nitride, and transition metal dichalcogenides (TMDCs). However, fundamental challenges associated with mate… ▽ More Heterostructure materials form the basis of much of modern electronics, from transistors to lasers and light-emitting diodes. Recent years have seen a renewed focus on creating heterostructures through the vertical integration of two-dimensional materials, including graphene, hexagonal boron nitride, and transition metal dichalcogenides (TMDCs). However, fundamental challenges associated with materials processing have limited material quality and impeded scalability. We demonstrate a method to convert sub-nanometer metal films deposited on silicon and sapphire into TMDC heterostructures through vapor-phase processing. The resulting heterostructures and superlattices exhibit novel properties compared with stand-alone TMDCs, including reduced bandgap, enhanced light-matter coupling, and improved catalytic performance. This robust and scalable synthetic method provides new opportunities to generate a wide range of artificially stacked 2D superlattices with controlled morphology and composition. △ Less

Submitted 4 November, 2021; originally announced November 2021.

Light-Matter Coupling in Scalable Van der Waals Superlattices

Authors: Pawan Kumar, Jason Lynch, Baokun Song, Haonan Ling, Francisco Barrera, Huiqin Zhang, Surendra B. Anantharaman, Jagrit Digani, Haoyue Zhu, Tanushree H. Choudhury, Clifford McAleese, Xiaochen Wang, Ben R. Conran, Oliver Whear, Michael J. Motala, Michael Snure, Christopher Muratore, Joan M. Redwing, Nicholas R. Glavin, Eric A. Stach, Artur R. Davoyan, Deep Jariwala

Abstract: Two-dimensional (2D) crystals have renewed opportunities in design and assembly of artificial lattices without the constraints of epitaxy. However, the lack of thickness control in exfoliated van der Waals (vdW) layers prevents realization of repeat units with high fidelity. Recent availability of uniform, wafer-scale samples permits engineering of both electronic and optical dispersions in stacks… ▽ More Two-dimensional (2D) crystals have renewed opportunities in design and assembly of artificial lattices without the constraints of epitaxy. However, the lack of thickness control in exfoliated van der Waals (vdW) layers prevents realization of repeat units with high fidelity. Recent availability of uniform, wafer-scale samples permits engineering of both electronic and optical dispersions in stacks of disparate 2D layers with multiple repeating units. We present optical dispersion engineering in a superlattice structure comprised of alternating layers of 2D excitonic chalcogenides and dielectric insulators. By carefully designing the unit cell parameters, we demonstrate > 90 % narrowband absorption in < 4 nm active layer excitonic absorber medium at room temperature, concurrently with enhanced photoluminescence in cm2 samples. These superlattices show evidence of strong light-matter coupling and exciton-polariton formation with geometry-tunable coupling constants. Our results demonstrate proof of concept structures with engineered optical properties and pave the way for a broad class of scalable, designer optical metamaterials from atomically-thin layers. △ Less

Submitted 25 March, 2021; originally announced March 2021.

Comments: 4 figures + supporting

Direct Opto-Electronic Imaging of 2D Semiconductor - 3D Metal Buried Interfaces

Authors: Kiyoung Jo, Pawan Kumar, Joseph Orr, Surendra B. Anantharaman, **shui Miao, Michael Motala, Arkamita Bandyopadhyay, Kim Kisslinger, Christopher Muratore, Vivek B. Shenoy, Eric Stach, Nicholas Glavin, Deep Jariwala

Abstract: The semiconductor-metal junction is one of the most critical factors for high performance electronic devices. In two-dimensional (2D) semiconductor devices, minimizing the voltage drop at this junction is particularly challenging and important. Despite numerous studies concerning contact resistance in 2D semiconductors, the exact nature of the buried interface under a three-dimensional (3D) metal… ▽ More The semiconductor-metal junction is one of the most critical factors for high performance electronic devices. In two-dimensional (2D) semiconductor devices, minimizing the voltage drop at this junction is particularly challenging and important. Despite numerous studies concerning contact resistance in 2D semiconductors, the exact nature of the buried interface under a three-dimensional (3D) metal remains unclear. Herein, we report the direct measurement of electrical and optical responses of 2D semiconductor-metal buried interfaces using a recently developed metal-assisted transfer technique to expose the buried interface which is then directly investigated using scanning probe techniques. We characterize the spatially varying electronic and optical properties of this buried interface with < 20 nm resolution. To be specific, potential, conductance and photoluminescence at the buried metal/MoS$_2$ interface are correlated as a function of a variety of metal deposition conditions as well as the type of metal contacts. We observe that direct evaporation of Au on MoS$_2$ induces a large strain of ~5% in the MoS$_2$ which, coupled with charge transfer, leads to degenerate do** of the MoS$_2$ underneath the contact. These factors lead to improvement of contact resistance to record values of 138 kohm-um, as measured using local conductance probes. This approach was adopted to characterize MoS$_2$-In/Au alloy interfaces, demonstrating contact resistance as low as 63 kohm-um. Our results highlight that the MoS$_2$/Metal interface is sensitive to device fabrication methods, and provides a universal strategy to characterize buried contact interfaces involving 2D semiconductors. △ Less

Submitted 28 January, 2021; originally announced January 2021.

Comments: 6 figures + supplement

Journal ref: ACS Nano 2021

A CMOS Compatible Aluminum Scandium Nitride-based Ferroelectric Tunnel Junction Memristor

Authors: Xiwen Liu, Jeffrey Zheng, Dixiong Wang, Pariasadat Musavigharavi, Eric A. Stach, Roy Olsson III, Deep Jariwala

Abstract: We report a complementary metal oxide semiconductor (CMOS) technology compatible ferroelectric tunnel junction memristor grown directly on top of a Silicon substrate using a scandium doped aluminum nitride as the ferroelectric layer. We report a complementary metal oxide semiconductor (CMOS) technology compatible ferroelectric tunnel junction memristor grown directly on top of a Silicon substrate using a scandium doped aluminum nitride as the ferroelectric layer. △ Less

Submitted 5 January, 2021; v1 submitted 17 December, 2020; originally announced December 2020.

Efficacy of Boron Nitride Encapsulation against Plasma-Processing in van der Waals Heterostructures

Authors: Pawan Kumar, Kelotchi S. Figueroa, Alexandre C. Foucher, Kiyoung Jo, Natalia Acero, Eric A. Stach, Deep Jariwala

Abstract: Two-dimensional (2D) transition metal dichalcogenides (TMDCs) are the subject of intense investigation for applications in optics, electronics, catalysis, and energy storage. Their optical and electronic properties can be significantly enhanced when encapsulated in an environment that is free of charge disorder. Because hexagonal boron nitride (h-BN) is atomically thin, highly-crystalline, and is… ▽ More Two-dimensional (2D) transition metal dichalcogenides (TMDCs) are the subject of intense investigation for applications in optics, electronics, catalysis, and energy storage. Their optical and electronic properties can be significantly enhanced when encapsulated in an environment that is free of charge disorder. Because hexagonal boron nitride (h-BN) is atomically thin, highly-crystalline, and is a strong insulator, it is one of the most commonly used 2D materials to encapsulate and passivate TMDCs. In this report, we examine how ultrathin h-BN shields an underlying MoS2 TMDC layer from the energetic argon plasmas that are routinely used during semiconductor device fabrication and post-processing. Aberration-corrected Scanning Transmission Electron Microscopy is used to analyze defect formation in both the h-BN and MoS2 layers, and these observations are correlated with Raman and photoluminescence spectroscopy. Our results highlight that h-BN is an effective barrier for short plasma exposures (< 30 secs) but is ineffective for longer exposures, which result in extensive knock-on damage and amorphization in the underlying MoS2. △ Less

Submitted 14 November, 2020; originally announced November 2020.

Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor

Authors: Xiwen Liu, Dixiong Wang, Jeffrey Zheng, Pariasadat Musavigharavi, **shui Miao, Eric A. Stach, Roy H. Olsson III, Deep Jariwala

Abstract: In 1963, Moll and Tarui suggested that the field-effect conductance of a semiconductor could be controlled by the remanent polarization of a ferroelectric (FE) material to create a ferroelectric field-effect transistor (FE-FET). However, subsequent efforts to produce a practical, compact FE-FET have been plagued by low retention and incompatibility with Complementary Metal Oxide Semiconductor (CMO… ▽ More In 1963, Moll and Tarui suggested that the field-effect conductance of a semiconductor could be controlled by the remanent polarization of a ferroelectric (FE) material to create a ferroelectric field-effect transistor (FE-FET). However, subsequent efforts to produce a practical, compact FE-FET have been plagued by low retention and incompatibility with Complementary Metal Oxide Semiconductor (CMOS) process integration. These difficulties led to the development of trapped-charge based memory devices (also called floating gate or flash memory), and these are now the mainstream non-volatile memory (NVM) technology. Over the past two decades, advances in oxide FE materials have rejuvenated the field of ferroelectrics and made FE random access memories (FE-RAM) a commercial reality. Despite these advances, commercial FE-RAM based on lead zirconium titanate (PZT) has stalled at the 130 nm due to process challenges.The recent discovery of scandium doped aluminum nitride (AlScN) as a CMOS compatible ferroelectric presents new opportunities for direct memory integration with logic transistors due to the low temperature of AlScN deposition (approx. 350 C). This temperature is compatible with CMOS back end of line processes. Here, we present a FE-FET device composed of an AlScN FE dielectric layer integrated with a channel layer of a van der Waals two-dimensional (2D) semiconductor, MoS2. Our devices show an ON/OFF ratio ~ 10^6, concurrent with a normalized memory window of 0.3 V/nm. The devices also demonstrate stable, two-state memory retention for up to 10^4 seconds. Our simulations and experimental results suggest that the combination of AlScN and 2D semiconductors is nearly ideal for low power FE-FET memory. These results demonstrate a new approach in embedded memory and in-memory computing, and could even lead to effective neuromorphic computing architectures. △ Less

Submitted 22 October, 2020; originally announced October 2020.

Giant gate-tunability of complex refractive index in semiconducting carbon nanotubes

Authors: Baokun Song, Fang Liu, Haonan Wang, **shui Miao, Yueli Chen, Pawan Kumar, Huiqin Zhang, Xiwen Liu, Honggang Gu, Eric A. Stach, Xuelei Liang, Shiyuan Liu, Zahra Fakhraai, Deep Jariwala

Abstract: Electrically-tunable optical properties in materials are desirable for many applications ranging from displays to lasing and optical communication. In most two-dimensional thin-films and other quantum confined materials, these constants have been measured accurately. However, the optical constants of single wall nanotubes (SWCNT) as a function of electrostatic tuning are yet to be measured due to… ▽ More Electrically-tunable optical properties in materials are desirable for many applications ranging from displays to lasing and optical communication. In most two-dimensional thin-films and other quantum confined materials, these constants have been measured accurately. However, the optical constants of single wall nanotubes (SWCNT) as a function of electrostatic tuning are yet to be measured due to lack of electronic purity and spatial homogeneity over large areas. Here, we measure the basic optical constants of ultrathin high-purity (>99%) semiconducting single wall carbon nanotube (s-SWCNT) films with spectroscopic ellipsometry. We extract the gate-tunable complex refractive index of s-SWCNT films and observe giant modulation of the real refractive index (~11.2% or an absolute value of >0.2) and extinction coefficient (~11.6%) in the near-infrared (IR) region (1.3-1.55 μm) induced by the applied electric field significantly higher than all existing electro-optic semiconductors in this wavelength range. We further design a multilayer IR reflection phase modulator stack by combining s-SWCNT and monolayer MoS2 heterostructures that can attain >45° reflection phase modulation at 1600 nm wavelength for < 200 nm total stack thickness. Our results highlight s-SWCNT as a promising material system for infrared photonics and electro-optics in telecommunication applications. △ Less

Submitted 23 September, 2020; originally announced September 2020.

Direct Visualisation of Out-of-Equilibrium Structural Transformations in Atomically-Thin Chalcogenides

Authors: Pawan Kumar, James P. Horwath, Alexandre C. Foucher, Christopher C. Price, Natalia Acero, Vivek B. Shenoy, Eric A. Stach, Deep Jariwala

Abstract: Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been the subject of sustained research interest due to their extraordinary electronic and optical properties. They also exhibit a wide range of structural phases because of the different orientations that the atoms can have within a single layer, or due to the ways that different layers can stack. Here we report the first study of… ▽ More Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been the subject of sustained research interest due to their extraordinary electronic and optical properties. They also exhibit a wide range of structural phases because of the different orientations that the atoms can have within a single layer, or due to the ways that different layers can stack. Here we report the first study of direct-visualization of structural transformations in atomically-thin layers under highly non-equilibrium thermodynamic conditions. We probe these transformations at the atomic scale using real-time, aberration corrected scanning transmission electron microscopy and observe strong dependence of the resulting structures and phases on both heating rate and temperature. A fast heating rate (25 C/sec) yields highly ordered crystalline hexagonal islands of sizes of less than 20 nm which are composed of a mixture of 2H and 3R phases. However, a slow heating rate (25 C/min) yields nanocrystalline and sub-stoichiometric amorphous regions. These differences are explained by different rates of sulfur evaporation and redeposition. The use of non-equilibrium heating rates to achieve highly crystalline and quantum-confined features from 2D atomic layers present a new route to synthesize atomically-thin, laterally confined nanostrucutres and opens new avenues for investigating fundamental electronic phenomena in confined dimensions. △ Less

Submitted 20 February, 2020; originally announced February 2020.

Understanding Important Features of Deep Learning Models for Transmission Electron Microscopy Image Segmentation

Authors: James P. Horwath, Dmitri N. Zakharov, Remi Megret, Eric A. Stach

Abstract: Cutting edge deep learning techniques allow for image segmentation with great speed and accuracy. However, application to problems in materials science is often difficult since these complex models may have difficultly learning physical parameters. In situ electron microscopy provides a clear platform for utilizing automated image analysis. In this work we consider the case of studying coarsening… ▽ More Cutting edge deep learning techniques allow for image segmentation with great speed and accuracy. However, application to problems in materials science is often difficult since these complex models may have difficultly learning physical parameters. In situ electron microscopy provides a clear platform for utilizing automated image analysis. In this work we consider the case of studying coarsening dynamics in supported nanoparticles, which is important for understanding e.g. the degradation of industrial catalysts. By systematically studying dataset preparation, neural network architecture, and accuracy evaluation, we describe important considerations in applying deep learning to physical applications, where generalizable and convincing models are required. △ Less

Submitted 12 December, 2019; originally announced December 2019.

Cathodoluminescence as an Effective Probe of Carrier Transport and Deep Level Defects in Droop-Mitigating InGaN/GaN Quantum Well Heterostructures

Authors: Zhibo Zhao, Akshay Singh, Jordan Chesin, Rob Armitage, Isaac Wildeson, Parijat Deb, Andrew Armstrong, Kim Kisslinger, Eric A. Stach, Silvija Gradečak

Abstract: Commercial InGaN/GaN light emitting diode heterostructures continue to suffer from efficiency droop at high current densities. Droop mitigation strategies target Auger recombination and typically require structural and/or compositional changes within the multi-quantum well active region. However, these modifications are often accompanied by a corresponding degradation in material quality that decr… ▽ More Commercial InGaN/GaN light emitting diode heterostructures continue to suffer from efficiency droop at high current densities. Droop mitigation strategies target Auger recombination and typically require structural and/or compositional changes within the multi-quantum well active region. However, these modifications are often accompanied by a corresponding degradation in material quality that decreases the expected gains in high-current external quantum efficiency. We study origins of these efficiency losses by correlating chip-level quantum efficiency measurements with structural and optical properties obtained using a combination of electron microscopy tools. The drop in quantum efficiency is not found to be correlated with quantum well (QW) width fluctuations. Rather, we show direct correlation between active region design, deep level defects, and delayed electron beam induced cathodoluminescence (CL) with characteristic rise time constants on the order of tens of seconds. We propose a model in which the electron beam fills deep level defect states and simultaneously drives reduction of the built-in field within the multi-quantum well active region, resulting in a delay in accumulation of carrier populations within the QWs. The CL measurements yield fundamental insights into carrier transport phenomena, efficiency-reducing defects, and quantum well band structure that are important in guiding future heterostructure process development. △ Less

Submitted 3 October, 2017; originally announced October 2017.

Comments: 4 figures; supplementary included at the end of the main of the text

Journal ref: Applied Physics Express 2019

Revealing Correlation of Valence State with Nanoporous Structure in Cobalt Catalyst Nanoparticles by in Situ Environmental TEM

Authors: Huolin L. Xin, Elzbieta A. Pach, Rosa E. Diaz, Eric A. Stach, Miquel Salmeron, Haimei Zheng

Abstract: Simultaneously probing the electronic structure and morphology of materials at the nanometer or atomic scale while a chemical reaction proceeds is significant for understanding the underlying reaction mechanisms and optimizing a materials design. This is especially important in the study of nanoparticle catalysts, yet such experiments have rarely been achieved. Utilizing an environmental transmiss… ▽ More Simultaneously probing the electronic structure and morphology of materials at the nanometer or atomic scale while a chemical reaction proceeds is significant for understanding the underlying reaction mechanisms and optimizing a materials design. This is especially important in the study of nanoparticle catalysts, yet such experiments have rarely been achieved. Utilizing an environmental transmission electron microscope (ETEM) equipped with a differentially pumped gas cell, we are able to conduct nanoscopic imaging and electron energy loss spectroscopy (EELS) in situ for cobalt catalysts under reaction conditions. Analysis revealed quantitative correlation of the cobalt valence states to the particles' nanoporous structures. The in situ experiments were performed on nanoporous cobalt particles coated with silica while a 15 mTorr hydrogen environment was maintained at various temperatures (300-600\degreeC). When the nanoporous particles were reduced, the valence state changed from cobalt oxide to metallic cobalt and concurrent structural coarsening was observed. In situ map** of the valence state and the corresponding nanoporous structures allows quantitatively analysis necessary for understanding and improving the mass activity and lifetime of cobalt-based catalysts, i.e., for Fischer-Tropsch synthesis that converts carbon monoxide and hydrogen into fuels, and uncovering the catalyst optimization mechanisms. △ Less

Submitted 4 April, 2012; originally announced April 2012.

Comments: ACS Nano, accepted

Journal ref: ACS Nano, 2012, 6, pp 4241-4247

Amorphous interface layer in thin graphite films grown on the carbon face of SiC

Authors: R. Colby, M. L. Bolen, M. A. Capano, E. A. Stach

Abstract: Cross-sectional transmission electron microscopy (TEM) is used to characterize an amorphous layer observed at the interface in graphite and graphene films grown via thermal decomposition of C-face 4H-SiC. The amorphous layer does not to cover the entire interface, but uniform contiguous regions span microns of cross-sectional interface. Annular dark field scanning transmission electron microscopy… ▽ More Cross-sectional transmission electron microscopy (TEM) is used to characterize an amorphous layer observed at the interface in graphite and graphene films grown via thermal decomposition of C-face 4H-SiC. The amorphous layer does not to cover the entire interface, but uniform contiguous regions span microns of cross-sectional interface. Annular dark field scanning transmission electron microscopy (ADF-STEM) images and electron energy loss spectroscopy (EELS) demonstrate that the amorphous layer is a carbon-rich composition of Si/C. The amorphous layer is clearly observed in samples grown at 1600°C for a range of growth pressures in argon, but not at 1500°C, suggesting a temperature-dependent formation mechanism. △ Less

Submitted 10 May, 2011; originally announced May 2011.

Control and Characterization of Individual Grains and Grain Boundaries in Graphene Grown by Chemical Vapor Deposition

Authors: Qingkai Yu, Luis A. Jauregui, Wei Wu, Robert Colby, Jifa Tian, Zhihua Su, Helin Cao, Zhihong Liu, Deepak Pandey, Dongguang Wei, Ting Fung Chung, Peng Peng, Nathan Guisinger, Eric A. Stach, Jiming Bao, Shin-shem Pei, Yong P. Chen

Abstract: The strong interest in graphene has motivated the scalable production of high quality graphene and graphene devices. Since large-scale graphene films synthesized to date are typically polycrystalline, it is important to characterize and control grain boundaries, generally believed to degrade graphene quality. Here we study single-crystal graphene grains synthesized by ambient CVD on polycrystallin… ▽ More The strong interest in graphene has motivated the scalable production of high quality graphene and graphene devices. Since large-scale graphene films synthesized to date are typically polycrystalline, it is important to characterize and control grain boundaries, generally believed to degrade graphene quality. Here we study single-crystal graphene grains synthesized by ambient CVD on polycrystalline Cu, and show how individual boundaries between coalescing grains affect graphene's electronic properties. The graphene grains show no definite epitaxial relationship with the Cu substrate, and can cross Cu grain boundaries. The edges of these grains are found to be predominantly parallel to zigzag directions. We show that grain boundaries give a significant Raman "D" peak, impede electrical transport, and induce prominent weak localization indicative of intervalley scattering in graphene. Finally, we demonstrate an approach using pre-patterned growth seeds to control graphene nucleation, opening a route towards scalable fabrication of single-crystal graphene devices without grain boundaries. △ Less

Submitted 21 March, 2011; v1 submitted 21 November, 2010; originally announced November 2010.

Comments: New version with additional data. Accepted by Nature Materials

Journal ref: Nature Materials 10, 443 (2011)

Hartree simulations of coupled quantum Hall edge states in corner-overgrown heterostructures

Authors: Lucia Steinke, Patrick Cantwell, Eric Stach, Dieter Schuh, Anna Fontcuberta i Morral, Max Bichler, Gerhard Abstreiter, Matthew Grayson

Abstract: The electronic states in a corner-overgrown bent GaAs/AlGaAs quantum well heterostructure are studied with numerical Hartree simulations. Transmission electron microscope pictures of the junction justify the sharp-corner assumption. In a tilted magnetic field both facets of the bent quantum well are brought to a quantum Hall (QH) state, and the corner hosts an unconventional hybrid system of two c… ▽ More The electronic states in a corner-overgrown bent GaAs/AlGaAs quantum well heterostructure are studied with numerical Hartree simulations. Transmission electron microscope pictures of the junction justify the sharp-corner assumption. In a tilted magnetic field both facets of the bent quantum well are brought to a quantum Hall (QH) state, and the corner hosts an unconventional hybrid system of two coupled counter-propagating quantum Hall edges and an additional one-dimensional accumulation wire. A subsystems model is introduced, whereby the total hybrid dispersion and wavefunctions are explained in terms of the constituent QH edge- and accumulation wire-subsystem dispersions and wavefunctions. At low magnetic fields, orthonormal basis wavefunctions of the hybrid system can be accurately estimated by projecting out the lowest bound state of the accumulation wire from the edge state wavefunctions. At high magnetic fields, the coupling between the three subsystems increases as a function of the applied magnetic field, in contrast to coplanar barrier-junctions of QH systems, leading to large anticrossing gaps between the subsystem dispersions. These results are discussed in terms of previously reported experimental data on bent quantum Hall systems. △ Less

Submitted 16 August, 2010; originally announced August 2010.

Comments: 11 pages, 8 figures

Large-scale Graphitic Thin Films Synthesized on Ni and Transferred to Insulators: Structural and Electronic Properties

Authors: Helin Cao, Qingkai Yu, Robert Colby, Deepak Pandey, C. S. Park, Jie Lian, Dmitry Zemlyanov, Isaac Childres, Vladimir Drachev, Eric A. Stach, Muhammad Hussain, Hao Li, Steven S. Pei, Yong P. Chen

Abstract: We present a comprehensive study of the structural and electronic properties of ultrathin films containing graphene layers synthesized by chemical vapor deposition (CVD) based surface segregation on polycrystalline Ni foils then transferred onto insulating SiO2/Si substrates. Films of size up to several mm's have been synthesized. Structural characterizations by atomic force microscopy (AFM), sc… ▽ More We present a comprehensive study of the structural and electronic properties of ultrathin films containing graphene layers synthesized by chemical vapor deposition (CVD) based surface segregation on polycrystalline Ni foils then transferred onto insulating SiO2/Si substrates. Films of size up to several mm's have been synthesized. Structural characterizations by atomic force microscopy (AFM), scanning tunneling microscopy (STM), cross-sectional transmission electron microscopy (XTEM) and Raman spectroscopy confirm that such large scale graphitic thin films (GTF) contain both thick graphite regions and thin regions of few layer graphene. The films also contain many wrinkles, with sharply-bent tips and dislocations revealed by XTEM, yielding insights on the growth and buckling processes of the GTF. Measurements on mm-scale back-gated transistor devices fabricated from the transferred GTF show ambipolar field effect with resistance modulation ~50% and carrier mobilities reaching ~2000 cm^2/Vs. We also demonstrate quantum transport of carriers with phase coherence length over 0.2 $μ$m from the observation of 2D weak localization in low temperature magneto-transport measurements. Our results show that despite the non-uniformity and surface roughness, such large-scale, flexible thin films can have electronic properties promising for device applications. △ Less

Submitted 23 February, 2010; v1 submitted 9 January, 2009; originally announced January 2009.

Comments: This version (as published) contains additional data, such as cross sectional TEM images

Journal ref: J. Appl. Phys. 107, 044310 (2010)

Nanometer-scale sharpness in corner-overgrown heterostructures

Authors: L. Steinke, P. Cantwell, D. Zakharov, E. Stach, N. J. Zaluzec, A. Fontcuberta i Morral, M. Bichler, G. Abstreiter, M. Grayson

Abstract: A corner-overgrown GaAs/AlGaAs heterostructure is investigated with transmission and scanning transmission electron microscopy, demonstrating self-limiting growth of an extremely sharp corner profile of 3.5 nm width. In the AlGaAs layers we observe self-ordered diagonal stripes, precipitating exactly at the corner, which are regions of increased Al content measured by an XEDS analysis. A quantit… ▽ More A corner-overgrown GaAs/AlGaAs heterostructure is investigated with transmission and scanning transmission electron microscopy, demonstrating self-limiting growth of an extremely sharp corner profile of 3.5 nm width. In the AlGaAs layers we observe self-ordered diagonal stripes, precipitating exactly at the corner, which are regions of increased Al content measured by an XEDS analysis. A quantitative model for self-limited growth is adapted to the present case of faceted MBE growth, and the corner sharpness is discussed in relation to quantum confined structures. We note that MBE corner overgrowth maintains nm-sharpness even after microns of growth, allowing the realization of corner-shaped nanostructures. △ Less

Submitted 14 July, 2008; v1 submitted 27 March, 2008; originally announced March 2008.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 93, 193117, (2008)