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Semiconductor to metal transition in two-dimensional gold and its van der Waals heterostack with graphene
Authors:
Stiven Forti,
Stefan Link,
Alexander Stöhr,
Yuran Niu,
Alexei A. Zakharov,
Camilla Coletti,
Ulrich Starke
Abstract:
The synthesis of transition metals in a two-dimensional (2D) fashion has attracted growing attention for both fundamental and application-oriented investigations, such as 2D magnetism, nanoplasmonics and non-linear optics. However, the large-area synthesis of this class of materials in a single-layer form poses non-trivial difficulties. Here we present the synthesis of a large-area 2D gold layer,…
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The synthesis of transition metals in a two-dimensional (2D) fashion has attracted growing attention for both fundamental and application-oriented investigations, such as 2D magnetism, nanoplasmonics and non-linear optics. However, the large-area synthesis of this class of materials in a single-layer form poses non-trivial difficulties. Here we present the synthesis of a large-area 2D gold layer, stabilized in between silicon carbide and monolayer (ML) graphene. We show that the 2D-Au ML is a semiconductor with the valence band maximum 50 meV below the Fermi level. The graphene and gold layers are largely non-interacting, thereby defining a novel class of van der Waals heterostructure. The 2D-Au bands, exhibit a 225 meV spin-orbit splitting along the {ΓK} direction, making it appealing for spin-related applications. By tuning the amount of gold at the SiC/graphene interface, we induce a semiconductor to metal transition in the 2D-Au, which was never observed before and hosts great interest for fundamental physics.
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Submitted 4 December, 2019;
originally announced December 2019.
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Introducing strong correlation effects into graphene by gadolinium intercalation
Authors:
S. Link,
S. Forti,
A. Stöhr,
K. Küster,
M. Rösner,
D. Hirschmeier,
C. Chen,
J. Avila,
M. C. Asensio,
A. A. Zakharov,
T. O. Wehling,
A. I. Lichtenstein,
M. I. Katsnelson,
U. Starke
Abstract:
Exotic ordered ground states driven by electronic correlations are expected to be induced in monolayer graphene when doped to the Van Hove singularity. Such do** levels are reached by intercalating Gd in graphene on SiC(0001), resulting in a strong homogeneity and stability. The electronic spectrum now exhibits severe renormalizations. Flat bands develop which is driven by electronic correlation…
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Exotic ordered ground states driven by electronic correlations are expected to be induced in monolayer graphene when doped to the Van Hove singularity. Such do** levels are reached by intercalating Gd in graphene on SiC(0001), resulting in a strong homogeneity and stability. The electronic spectrum now exhibits severe renormalizations. Flat bands develop which is driven by electronic correlations according to our theoretical studies. Due to strong electron-phonon coupling in this regime, polaron replica bands develop. Thus, interesting ordered ground states should be made accessible.
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Submitted 17 September, 2019;
originally announced September 2019.
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Weak localization measurements of electronic scattering rates in Li-doped epitaxial graphene
Authors:
Ali Khademi,
Kristen Kaasbjerg,
Pinder Dosanjh,
Alexander Stöhr,
Stiven Forti,
Ulrich Starke,
Joshua A. Folk
Abstract:
Early experiments on alkali-doped graphene demonstrated that the dopant adatoms modify the conductivity of graphene significantly, as extra carriers enhance conductivity while Coulomb scattering off the adatoms suppresses it. However, conductivity probes the overall scattering rate, so a dominant channel associated with long-range Coulomb scattering will mask weaker short-range channels. We presen…
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Early experiments on alkali-doped graphene demonstrated that the dopant adatoms modify the conductivity of graphene significantly, as extra carriers enhance conductivity while Coulomb scattering off the adatoms suppresses it. However, conductivity probes the overall scattering rate, so a dominant channel associated with long-range Coulomb scattering will mask weaker short-range channels. We present weak localization measurements of epitaxial graphene with lithium adatoms that separately quantify intra- and intervalley scattering rates, then compare the measurements to tight-binding calculations of expected rates for this system. The intravalley rate is strongly enhanced by Li deposition, consistent with Coulomb scattering off the Li adatoms. A simultaneous enhancement of intervalley scattering is partially explained by extra carriers in the graphene interacting with residual disorder. But differences between measured and calculated rates at high Li coverage may indicate adatom-induced modifications to the band structure that go beyond the applied model. Similar adatom-induced modifications of the graphene bands have recently been observed in ARPES, but a full theoretical understanding of these effects is still in development.
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Submitted 31 October, 2019; v1 submitted 28 August, 2019;
originally announced August 2019.
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Alkali do** of graphene: the crucial role of high temperature annealing
Authors:
Ali Khademi,
Ebrahim Sajadi,
Pinder Dosanjh,
Doug Bonn,
Joshua A. Folk,
Alexander Stöhr,
Stiven Forti,
Ulrich Starke
Abstract:
The do** efficiency of lithium deposited at cryogenic temperatures on epitaxial and CVD monolayer graphene has been investigated under ultra-high vacuum conditions. Change of charge carrier density was monitored by gate voltage shift of the Dirac point and by Hall measurements, in low and high do** regimes. It was found that pre-annealing the graphene greatly enhanced the maximum levels of dop…
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The do** efficiency of lithium deposited at cryogenic temperatures on epitaxial and CVD monolayer graphene has been investigated under ultra-high vacuum conditions. Change of charge carrier density was monitored by gate voltage shift of the Dirac point and by Hall measurements, in low and high do** regimes. It was found that pre-annealing the graphene greatly enhanced the maximum levels of do** that could be achieved: do** saturated at $Δn = 2\times 10^{13}$ e$^-$/cm$^2$ without annealing, independent of sample type or previous processing; after a 900 K anneal, the saturated do** rose one order of magnitude to $Δn = 2\times 10^{14}$ e$^-$/cm$^2$.
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Submitted 2 October, 2016;
originally announced October 2016.
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Observation of Dirac surface states in the noncentrosymmetric superconductor BiPd
Authors:
H. M. Benia,
E. Rampi,
C. Trainer,
C. M. Yim,
A. Maldonado,
D. C. Peets,
A. Stoehr,
U. Starke,
K. Kern,
A. Yaresko,
G. Levy,
A. Damascelli,
C. R. Ast,
A. P. Schnyder,
P. Wahl
Abstract:
Materials with strong spin-orbit coupling (SOC) have in recent years become a subject of intense research due to their potential applications in spintronics and quantum information technology. In particular, in systems which break inversion symmetry, SOC facilitates the Rashba-Dresselhaus effect, leading to a lifting of spin degeneracy in the bulk and intricate spin textures of the Bloch wave func…
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Materials with strong spin-orbit coupling (SOC) have in recent years become a subject of intense research due to their potential applications in spintronics and quantum information technology. In particular, in systems which break inversion symmetry, SOC facilitates the Rashba-Dresselhaus effect, leading to a lifting of spin degeneracy in the bulk and intricate spin textures of the Bloch wave functions. Here, by combining angular resolved photoemission (ARPES) and low temperature scanning tunneling microscopy (STM) measurements with relativistic first-principles band structure calculations, we examine the role of SOC in single crystals of noncentrosymmetric BiPd. We report the detection of several Dirac surface states, one of which exhibits an extremely large spin splitting. Unlike the surface states in inversion-symmetric systems, the Dirac surface states of BiPd have completely different properties at opposite faces of the crystal and are not trivially linked by symmetry. The spin-splitting of the surface states exhibits a strong anisotropy by itself, which can be linked to the low in-plane symmetry of the surface termination.
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Submitted 3 August, 2016;
originally announced August 2016.
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Enhanced electron-phonon coupling in graphene with periodically distorted lattice
Authors:
E. Pomarico,
M. Mitrano,
H. Bromberger,
M. A. Sentef,
A. Al-Temimy,
C. Coletti,
A. Stöhr,
S. Link,
U. Starke,
C. Cacho,
R. Chapman,
E. Springate,
A. Cavalleri,
I. Gierz
Abstract:
Electron-phonon coupling directly determines the stability of cooperative order in solids, including superconductivity, charge and spin density waves. Therefore, the ability to enhance or reduce electron-phonon coupling by optical driving may open up new possibilities to steer materials' functionalities, potentially at high speeds. Here we explore the response of bilayer graphene to dynamical modu…
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Electron-phonon coupling directly determines the stability of cooperative order in solids, including superconductivity, charge and spin density waves. Therefore, the ability to enhance or reduce electron-phonon coupling by optical driving may open up new possibilities to steer materials' functionalities, potentially at high speeds. Here we explore the response of bilayer graphene to dynamical modulation of the lattice, achieved by driving optically-active in-plane bond stretching vibrations with femtosecond mid-infrared pulses. The driven state is studied by two different ultrafast spectroscopic techniques. Firstly, TeraHertz time-domain spectroscopy reveals that the Drude scattering rate decreases upon driving. Secondly, the relaxation rate of hot quasi-particles, as measured by time- and angle-resolved photoemission spectroscopy, increases. These two independent observations are quantitatively consistent with one another and can be explained by a transient three-fold enhancement of the electron-phonon coupling constant. The findings reported here provide useful perspective for related experiments, which reported the enhancement of superconductivity in alkali-doped fullerites when a similar phonon mode was driven.
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Submitted 20 January, 2017; v1 submitted 8 July, 2016;
originally announced July 2016.
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Intercalation of graphene on SiC(0001) via ion-implantation
Authors:
A. Stöhr,
S. Forti,
S. Link,
A. A. Zakharov,
K. Kern,
U. Starke,
H. M. Benia
Abstract:
Electronic devices based on graphene technology are catching on rapidly and the ability to engineer graphene properties at the nanoscale is becoming, more than ever, indispensable. Here, we present a new procedure of graphene functionalization on SiC(0001) that paves the way towards the fabrication of complex graphene electronic chips. The procedure resides on the well-known ion-implantation techn…
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Electronic devices based on graphene technology are catching on rapidly and the ability to engineer graphene properties at the nanoscale is becoming, more than ever, indispensable. Here, we present a new procedure of graphene functionalization on SiC(0001) that paves the way towards the fabrication of complex graphene electronic chips. The procedure resides on the well-known ion-implantation technique. The efficiency of the working principle is demonstrated by the intercalation of the epitaxial graphene layer on SiC(0001) with Bi atoms, which was not possible following standard procedures. Our results put forward the ion-beam lithography to nanostructure and functionalize desired graphene chips.
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Submitted 1 April, 2016;
originally announced April 2016.
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Evidence for superconductivity in Li-decorated monolayer graphene
Authors:
Bart Ludbrook,
Giorgio Levy,
Pascal Nigge,
Marta Zonno,
Michael Schneider,
David Dvorak,
Christian Veenstra,
Sergey Zhdanovich,
Douglas Wong,
Pinder Dosanjh,
Carola Straßer,
Alexander Stohr,
Stiven Forti,
Christian Ast,
Ulrich Starke,
Andrea Damascelli
Abstract:
Monolayer graphene exhibits many spectacular electronic properties, with superconductivity being arguably the most notable exception. It was theoretically proposed that superconductivity might be induced by enhancing the electron-phonon coupling through the decoration of graphene with an alkali adatom superlattice [Profeta et al. Nat. Phys. 8, 131-134 (2012)]. While experiments have indeed demonst…
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Monolayer graphene exhibits many spectacular electronic properties, with superconductivity being arguably the most notable exception. It was theoretically proposed that superconductivity might be induced by enhancing the electron-phonon coupling through the decoration of graphene with an alkali adatom superlattice [Profeta et al. Nat. Phys. 8, 131-134 (2012)]. While experiments have indeed demonstrated an adatom-induced enhancement of the electron-phonon coupling, superconductivity has never been observed. Using angle-resolved photoemission spectroscopy (ARPES) we show that lithium deposited on graphene at low temperature strongly modifies the phonon density of states, leading to an enhancement of the electron-phonon coupling of up to $λ\!\simeq\!0.58$. On part of the graphene-derived $π^*$-band Fermi surface, we then observe the opening of a $Δ\!\simeq\!0.9$ meV temperature-dependent pairing gap. This result suggests for the first time, to our knowledge, that Li-decorated monolayer graphene is indeed superconducting with $T_c\!\simeq\!5.9 K$.
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Submitted 29 August, 2015; v1 submitted 24 August, 2015;
originally announced August 2015.
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Population Inversion in Monolayer and Bilayer Graphene
Authors:
Isabella Gierz,
Matteo Mitrano,
Jesse C. Petersen,
Cephise Cacho,
I. C. Edmond Turcu,
Emma Springate,
Alexander Stöhr,
Axel Köhler,
Ulrich Starke,
Andrea Cavalleri
Abstract:
The recent demonstration of saturable absorption and negative optical conductivity in the Terahertz range in graphene has opened up new opportunities for optoelectronic applications based on this and other low dimensional materials. Recently, population inversion across the Dirac point has been observed directly by time- and angle-resolved photoemission spectroscopy (tr-ARPES), revealing a relaxat…
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The recent demonstration of saturable absorption and negative optical conductivity in the Terahertz range in graphene has opened up new opportunities for optoelectronic applications based on this and other low dimensional materials. Recently, population inversion across the Dirac point has been observed directly by time- and angle-resolved photoemission spectroscopy (tr-ARPES), revealing a relaxation time of only ~ 130 femtoseconds. This severely limits the applicability of single layer graphene to, for example, Terahertz light amplification. Here we use tr-ARPES to demonstrate long-lived population inversion in bilayer graphene. The effect is attributed to the small band gap found in this compound. We propose a microscopic model for these observations and speculate that an enhancement of both the pump photon energy and the pump fluence may further increase this lifetime.
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Submitted 31 August, 2014;
originally announced September 2014.
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Snapshots of non-equilibrium Dirac carrier distributions in graphene
Authors:
Isabella Gierz,
Jesse C. Petersen,
Matteo Mitrano,
Cephise Cacho,
Edmond Turcu,
Emma Springate,
Alexander Stöhr,
Axel Köhler,
Ulrich Starke,
Andrea Cavalleri
Abstract:
The optical properties of graphene are made unique by the linear band structure and the vanishing density of states at the Dirac point. It has been proposed that even in the absence of a semiconducting bandgap, a relaxation bottleneck at the Dirac point may allow for population inversion and lasing at arbitrarily long wavelengths. Furthermore, efficient carrier multiplication by impact ionization…
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The optical properties of graphene are made unique by the linear band structure and the vanishing density of states at the Dirac point. It has been proposed that even in the absence of a semiconducting bandgap, a relaxation bottleneck at the Dirac point may allow for population inversion and lasing at arbitrarily long wavelengths. Furthermore, efficient carrier multiplication by impact ionization has been discussed in the context of light harvesting applications. However, all these effects are difficult to test quantitatively by measuring the transient optical properties alone, as these only indirectly reflect the energy and momentum dependent carrier distributions. Here, we use time- and angle-resolved photoemission spectroscopy with femtosecond extreme ultra-violet (EUV) pulses at 31.5 eV photon energy to directly probe the non-equilibrium response of Dirac electrons near the K-point of the Brillouin zone. In lightly hole-doped epitaxial graphene samples, we explore excitation in the mid- and near-infrared, both below and above the minimum photon energy for direct interband transitions. While excitation in the mid-infrared results only in heating of the equilibrium carrier distribution, interband excitations give rise to population inversion, suggesting that terahertz lasing may be possible. However, in neither excitation regime do we find indication for carrier multiplication, questioning the applicability of graphene for light harvesting. Time-resolved photoemission spectroscopy in the EUV emerges as the technique of choice to assess the suitability of new materials for optoelectronics, providing quantitatively accurate measurements of non-equilibrium carriers at all energies and wavevectors.
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Submitted 4 April, 2013;
originally announced April 2013.
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Magnetic field dependence of the critical current in YBa_2Cu_3O_{7-δ}/Au/Nb ramp-zigzag Josephson junctions
Authors:
S. Scharinger,
M. Turad,
A. Stoehr,
V. Leca,
E. Goldobin,
R. G. Mints,
D. Koelle,
R. Kleiner
Abstract:
We study the critical current I_c dependence on applied magnetic field H for multifacet YBa_2Cu_3O_{7-δ}-Au-Nb ramp-type zigzag Josephson junctions. For many experiments one would like to apply a homogeneous field in the junction plane. However, even tiny misalignments can cause drastic deviations from homogeneity. We show this explicitly by measuring and analyzing I_c vs. H for an 8 facet junctio…
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We study the critical current I_c dependence on applied magnetic field H for multifacet YBa_2Cu_3O_{7-δ}-Au-Nb ramp-type zigzag Josephson junctions. For many experiments one would like to apply a homogeneous field in the junction plane. However, even tiny misalignments can cause drastic deviations from homogeneity. We show this explicitly by measuring and analyzing I_c vs. H for an 8 facet junction, forming an array of 4\times(0-π)-segments. The ramp angle is θ_r=8^\circ. The facet width is 10\,\mum. H is applied under different angles θrelative to the substrate plane and different angles φrelative to the in-plane orientation of the zigzags. We find that a homogeneous flux distribution is only achieved for an angle θ_h\approx 1^\circ - 2^\circ and that even a small misalignment \sim 0.1^\circ relative to θ_h can cause a substantial inhomogeneity of the flux density inside the junction, drastically altering its I_c vs. H interference pattern. We also show, that there is a dead angle θ^*_d relative to θ_h of similar magnitude, where the average flux density completely vanishes.
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Submitted 16 October, 2012; v1 submitted 1 August, 2012;
originally announced August 2012.
