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Photoinduced Spin Centers in Photocatalytic Metal-Organic Framework UiO-66
Authors:
Anastasiia Kultaeva,
Timur Biktagirov,
Andreas Sperlich,
Patrick Dörflinger,
Mauricio E. Calvo,
Eugenio Otal,
Vladimir Dyakonov
Abstract:
Metal-organic frameworks (MOFs) are promising candidates for the advanced photocatalytic active materials. These porous crystalline compounds have large active surface area and structural tunability, highly competitive with oxides, the well-established material class for the photocatalysis. However, due to their complex organic and coordination chemistry composition, photophysical mechanisms invol…
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Metal-organic frameworks (MOFs) are promising candidates for the advanced photocatalytic active materials. These porous crystalline compounds have large active surface area and structural tunability, highly competitive with oxides, the well-established material class for the photocatalysis. However, due to their complex organic and coordination chemistry composition, photophysical mechanisms involved in the photocatalytic process in MOFs are still not well understood. Employing electron paramagnetic resonance (EPR) spectroscopy, we investigate the fundamental processes of electron and hole generation, as well as capture events that lead to the formation of various radical species in UiO-66, an archetypical MOF photocatalyst. As a result, we detected a manifold of photoinduced electron spin centers, which we subsequently analyzed and identified with the help of density-functional theory (DFT) calculations. Our findings provide new insights into the photo-induced charge transfer processes, which are the basis of photocatalytic activity in UiO-66. This sets the stage for further studies on photogenerated spin centers in this and similar MOF materials.
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Submitted 23 April, 2024;
originally announced April 2024.
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Onset of Spin Entanglement in Doped Carbon Nanotubes Studied by EPR
Authors:
Andreas Sperlich,
Klaus H. Eckstein,
Florian Oberndorfer,
Bernd K. Sturzda,
Michael Auth,
Vladimir Dyakonov,
Roland Mitric,
Tobias Hertel
Abstract:
Nanoscale semiconductors with isolated spin impurities have been touted as promising materials for their potential use at the intersection of quantum, spin, and information technologies. Electron paramagnetic resonance (EPR) studies of spins in semiconducting carbon nanotubes have overwhelmingly focused on spins more strongly localized by $\rm sp^3$-type lattice defects. However, the creation of s…
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Nanoscale semiconductors with isolated spin impurities have been touted as promising materials for their potential use at the intersection of quantum, spin, and information technologies. Electron paramagnetic resonance (EPR) studies of spins in semiconducting carbon nanotubes have overwhelmingly focused on spins more strongly localized by $\rm sp^3$-type lattice defects. However, the creation of such impurities is irreversible and requires specific reactions to generate them. Shallow charge impurities, on the other hand, are more readily and widely produced by simple redox chemistry, but have not yet been investigated for their spin properties. Here we use EPR to study p-doped (6,5) semiconducting single-wall carbon nanotubes (s-SWNTs) and elucidate the role of impurity-impurity interactions in conjunction with exchange and correlation effects for the spin behavior of this material. A quantitative comparison of the EPR signals with phenomenological modeling combined with configuration interaction electronic structure calculations of impurity pairs shows that orbital overlap, combined with exchange and correlation effects, causes the EPR signal to disappear due to spin entanglement for do** levels corresponding to impurity spacings of $14\,\rm nm$ (at 30 K). This transition is predicted to shift to higher do** levels with increasing temperature and to lower levels with increasing screening, providing an opportunity for improved spin control in doped s-SWNTs.
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Submitted 8 March, 2024;
originally announced March 2024.
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Room-Temperature Silicon Carbide Maser: Unveiling Quantum Amplification and Cooling
Authors:
Andreas Gottscholl,
Maximilian Wagenhöfer,
Valentin Baianov,
Vladimir Dyakonov,
Andreas Sperlich
Abstract:
We present the very first demonstration of a maser utilizing silicon vacancies (VSi) within 4H silicon carbide (SiC). Leveraging an innovative feedback-loop technique, we elevate the resonator's quality factor, enabling maser operation even above room temperature. The SiC maser's broad linewidth showcases its potential as an exceptional preamplifier, displaying measured gain surpassing 10dB and si…
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We present the very first demonstration of a maser utilizing silicon vacancies (VSi) within 4H silicon carbide (SiC). Leveraging an innovative feedback-loop technique, we elevate the resonator's quality factor, enabling maser operation even above room temperature. The SiC maser's broad linewidth showcases its potential as an exceptional preamplifier, displaying measured gain surpassing 10dB and simulations indicating potential amplification exceeding 30dB. By exploiting the relatively small zero-field splitting (ZFS) of VSi in SiC, the amplifier can be switched into an optically-pumped microwave photon absorber, reducing the resonator's mode temperature by 35 K below operating conditions. This breakthrough holds promise for quantum computing advancements and fundamental studies in cavity quantum electrodynamics. Our findings highlight SiC's transformative potential in revolutionizing contemporary microwave technologies.
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Submitted 13 December, 2023;
originally announced December 2023.
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Reversible spin-optical interface in luminescent organic radicals
Authors:
Sebastian Gorgon,
Kuo Lv,
Jeannine Grüne,
Bluebell H. Drummond,
William K. Myers,
Giacomo Londi,
Gaetano Ricci,
Danillo Valverde,
Claire Tonnelé,
Petri Murto,
Alexander S. Romanov,
David Casanova,
Vladimir Dyakonov,
Andreas Sperlich,
David Beljonne,
Yoann Olivier,
Feng Li,
Richard H. Friend,
Emrys W. Evans
Abstract:
Molecules present a versatile platform for quantum information science, and are candidates for sensing and computation applications. Robust spin-optical interfaces are key to harnessing the quantum resources of materials. To date, carbon-based candidates have been non-luminescent, which prevents optical read-out. Here we report the first organic molecules displaying both efficient luminescence and…
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Molecules present a versatile platform for quantum information science, and are candidates for sensing and computation applications. Robust spin-optical interfaces are key to harnessing the quantum resources of materials. To date, carbon-based candidates have been non-luminescent, which prevents optical read-out. Here we report the first organic molecules displaying both efficient luminescence and near-unity generation yield of high-spin multiplicity excited states. This is achieved by designing an energy resonance between emissive doublet and triplet levels, here on covalently coupled tris(2,4,6-trichlorophenyl) methyl-carbazole radicals (TTM-1Cz) and anthracene. We observe the doublet photoexcitation delocalise onto the linked acene within a few picoseconds and subsequently evolve to a pure high spin state (quartet for monoradicals, quintet for biradical) of mixed radical-triplet character near 1.8 eV. These high-spin states are coherently addressable with microwaves even at 295 K, with optical read-out enabled by intersystem crossing to emissive states. Furthermore, for the biradical, on return to the ground state the previously uncorrelated radical spins either side of the anthracene show strong spin correlation. Our approach simultaneously supports a high efficiency of initialisation, spin manipulations and light-based read-out at room temperature. The integration of luminescence and high-spin states creates an organic materials platform for emerging quantum technologies.
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Submitted 24 March, 2023;
originally announced March 2023.
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Understanding the Role of Triplet-triplet Annihilation in Non-fullerene Acceptor Organic Solar Cells
Authors:
Lucy J. F. Hart,
Jeannine Grüne,
Wei Liu,
Tsz-ki Lau,
Joel Luke,
Yi-Chun Chin,
Xinyu Jiang,
Huotian Zhang,
Daniel J. C. Sowood,
Darcy M. L. Unson,
Ji-Seon Kim,
Xinhui Lu,
Ying** Zou,
Feng Gao,
Andreas Sperlich,
Vladimir Dyakonov,
Jun Yuan,
Alexander J. Gillett
Abstract:
Non-fullerene acceptors (NFAs) have enabled power conversion efficiencies exceeding 19% in organic solar cells (OSCs). However, the open-circuit voltage of OSCs remains low relative to their optical gap due to excessive non-radiative recombination, and this now limits performance. Here, we consider an important aspect of OSC design, namely management of the triplet exciton population formed after…
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Non-fullerene acceptors (NFAs) have enabled power conversion efficiencies exceeding 19% in organic solar cells (OSCs). However, the open-circuit voltage of OSCs remains low relative to their optical gap due to excessive non-radiative recombination, and this now limits performance. Here, we consider an important aspect of OSC design, namely management of the triplet exciton population formed after non-geminate charge recombination. By comparing the blends PM6:Y11 and PM6:Y6, we show that the greater crystallinity of the NFA domains in PM6:Y11 leads to a higher rate of triplet-triplet annihilation (TTA). We attribute this to the four times larger ground state dipole moment of Y11 versus Y6, which improves the long range NFA out-of-plane ordering. Since TTA converts a fraction of the non-emissive triplet states into bright singlet states, it has the potential to reduce non-radiative voltage losses. Through a kinetic analysis of the recombination processes under 1-Sun illumination, we provide a framework for determining the conditions under which TTA may improve OSC performance. If these could be satisfied, TTA has the potential to reduce non-radiative voltage losses by up to several tens of mV and could thus improve OSC performance.
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Submitted 24 April, 2023; v1 submitted 5 January, 2023;
originally announced January 2023.
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Triplet Excitons and associated Efficiency-Limiting Pathways in Organic Solar Cell Blends based on (Non-) Halogenated PBDB-T and Y-Series
Authors:
Jeannine Grüne,
Giacomo Londi,
Alexander J. Gillett,
Basil Stähly,
Sebastian Lulei,
Maria Kotova,
Yoann Olivier,
Vladimir Dyakonov,
Andreas Sperlich
Abstract:
The great progress in organic photovoltaics (OPV) over the past few years has been largely achieved by the development of non-fullerene acceptors (NFAs), with power conversion efficiencies now approaching 20%. To further improve device performance, loss mechanisms must be identified and minimized. Triplet states are known to adversely affect device performance, since they can form energetically tr…
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The great progress in organic photovoltaics (OPV) over the past few years has been largely achieved by the development of non-fullerene acceptors (NFAs), with power conversion efficiencies now approaching 20%. To further improve device performance, loss mechanisms must be identified and minimized. Triplet states are known to adversely affect device performance, since they can form energetically trapped excitons on low-lying states that are responsible for non-radiative losses or even device degradation. Halogenation of OPV materials has long been employed to tailor energy levels and to enhance open circuit voltage. Yet, the influence on recombination to triplet excitons has been largely unexplored. Using the complementary spin-sensitive methods of photoluminescence detected magnetic resonance (PLDMR) and transient electron paramagnetic resonance (trEPR) corroborated by transient absorption and quantum-chemical calculations, we unravel exciton pathways in OPV blends employing the polymer donors PBDB-T, PM6 and PM7 together with NFAs Y6 and Y7. All blends reveal triplet excitons on the NFA populated via non-geminate hole back transfer and, in blends with halogenated donors, also by spin-orbit coupling driven intersystem crossing. Identifying these triplet formation pathways in all tested solar cell absorber films highlights the untapped potential for improved charge generation to further increase plateauing OPV efficiencies.
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Submitted 3 January, 2023; v1 submitted 29 April, 2022;
originally announced April 2022.
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Superradiance of Spin Defects in Silicon Carbide for Maser Applications
Authors:
Andreas Gottscholl,
Maximilian Wagenhöfer,
Manuel Klimmer,
Selina Scherbel,
Christian Kasper,
Valentin Baianov,
Georgy V. Astakhov,
Vladimir Dyakonov,
Andreas Sperlich
Abstract:
Masers as telecommunication amplifiers have been known for decades, yet their application is strongly limited due to extreme operating conditions requiring vacuum techniques and cryogenic temperatures. Recently, a new generation of masers has been invented based on optically pumped spin states in pentacene and diamond. In this study, we pave the way for masers based on spin S = 3/2 silicon vacancy…
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Masers as telecommunication amplifiers have been known for decades, yet their application is strongly limited due to extreme operating conditions requiring vacuum techniques and cryogenic temperatures. Recently, a new generation of masers has been invented based on optically pumped spin states in pentacene and diamond. In this study, we pave the way for masers based on spin S = 3/2 silicon vacancy (V$_{Si}$) defects in silicon carbide (SiC) to overcome the microwave generation threshold and discuss the advantages of this highly developed spin hosting material. To achieve population inversion, we optically pump the V$_{Si}$ into their $m_S$ = $\pm$1/2 spin sub-states and additionally tune the Zeeman energy splitting by applying an external magnetic field. In this way, the prerequisites for stimulated emission by means of resonant microwaves in the 10 GHz range are fulfilled. On the way to realising a maser, we were able to systematically solve a series of subtasks that improved the underlying relevant physical parameters of the SiC samples. Among others, we investigated the pump efficiency as a function of the optical excitation wavelength and the angle between the magnetic field and the defect symmetry axis in order to boost the population inversion factor, a key figure of merit for the targeted microwave oscillator. Furthermore, we developed a high-Q sapphire microwave resonator (Q ~ 10$^4$ - 10$^5$) with which we find superradiant stimulated microwave emission. In summary, SiC with optimized spin defect density and thus spin relaxation rates is well on its way of becoming a suitable maser gain material with wide-ranging applications.
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Submitted 6 May, 2022; v1 submitted 1 March, 2022;
originally announced March 2022.
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Electron-nuclear coherent coupling and nuclear spin readout through optically polarized VB- spin states in hBN
Authors:
Fadis F. Murzakhanov,
Georgy V. Mamin,
Sergei B. Orlinskii,
Uwe Gerstmann,
Wolf G. Schmidt,
Timur Biktagirov,
Igor Aharonovich,
Andreas Gottscholl,
Andreas Sperlich,
Vladimir Dyakonov,
Victor A. Soltamov
Abstract:
Coherent coupling of defect spins with surrounding nuclei along with the endowment to read out the latter, are basic requirements for an application in quantum technologies. We show that negatively charged boron vacancies (VB-) in electron-irradiated hexagonal boron nitride (hBN) meet these prerequisites. We demonstrate Hahn-echo coherence of the VB- electron spin with a characteristic decay time…
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Coherent coupling of defect spins with surrounding nuclei along with the endowment to read out the latter, are basic requirements for an application in quantum technologies. We show that negatively charged boron vacancies (VB-) in electron-irradiated hexagonal boron nitride (hBN) meet these prerequisites. We demonstrate Hahn-echo coherence of the VB- electron spin with a characteristic decay time Tcoh = 15 us, close to the theoretically predicted limit of 18 us for spin defects in hBN. Modulation in the MHz range superimposed on the Hahn-echo decay curve are shown to be induced by coherent coupling of the VB- spin with the three nearest 14N nuclei through a nuclear quadrupole interaction of 2.11 MHz. Supporting DFT calculation confirm that the electron-nuclear coupling is confined to the defective layer. Our findings allow an in-depth understanding of the electron-nuclear interactions of the VB- defect in hBN and demonstrate its strong potential in quantum technologies.
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Submitted 20 December, 2021;
originally announced December 2021.
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Detecting triplet states in opto-electronic and photovoltaic materials and devices by transient optically detected magnetic resonance
Authors:
Jeannine Grüne,
Vladimir Dyakonov,
Andreas Sperlich
Abstract:
Triplet excited states in organic semiconductor materials and devices are notoriously difficult to detect and study with established spectroscopic methods. Yet, they are a crucial intermediate step in next-generation organic light emitting diodes (OLED) that employ thermally activated delayed fluorescence (TADF) to upconvert non-emissive triplets to emissive singlet states. In organic photovoltaic…
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Triplet excited states in organic semiconductor materials and devices are notoriously difficult to detect and study with established spectroscopic methods. Yet, they are a crucial intermediate step in next-generation organic light emitting diodes (OLED) that employ thermally activated delayed fluorescence (TADF) to upconvert non-emissive triplets to emissive singlet states. In organic photovoltaic (OPV) devices, however, triplets are an efficiency-limiting exciton loss channel and are also involved in device degradation. Here, we introduce an innovative spin-sensitive method to study triplet states in both, optically excited organic semiconductor films, as well as in electrically driven devices. The method of transient optically detected magnetic resonance (trODMR) can be applied to all light-emitting materials whose luminescence depends on paramagnetic spin states. It is thus an ideal spectroscopic tool to distinguish different states involved and determine their corresponding time scales. We unravel the role of intermediate excited spin states in opto-electronic and photovoltaic materials and devices and reveal fundamental differences in electrically and optically induced triplet states.
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Submitted 23 November, 2021;
originally announced November 2021.
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Photophysics of Deep Blue Acridane- and Benzonitrile-Based Emitter Employing Thermally Activated Delayed Fluorescence
Authors:
Nikita A. Drigo,
Liudmila G. Kudriashova,
Sebastian Weissenseel,
Andreas Sperlich,
Aron Joel Huckaba,
Mohammad Khaja Nazeeruddin,
Vladimir Dyakonov
Abstract:
We designed and synthesized a new organic light-emitting diode (OLED) emitter, SBABz4, containing spiro-biacridine donor (D) in the core surrounded by two benzonitrile acceptors (A). The dual A-DxD-A structure is shown to provide pure-blue emission in relation to its single A-D counterpart. Time-resolved photoluminescence (TRPL) recorded in the broad dynamic range from solutions and solid films re…
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We designed and synthesized a new organic light-emitting diode (OLED) emitter, SBABz4, containing spiro-biacridine donor (D) in the core surrounded by two benzonitrile acceptors (A). The dual A-DxD-A structure is shown to provide pure-blue emission in relation to its single A-D counterpart. Time-resolved photoluminescence (TRPL) recorded in the broad dynamic range from solutions and solid films revealed three emission components: prompt fluorescence, phosphorescence, and efficient thermally-activated delayed fluorescence (TADF). The latter is independently proven by temperature-dependent TRPL and oxygen-quenching PL experiment. From the PL lifetimes and quantum yield, we estimated maximum external quantum efficiency of 7.1% in SBABz4-based OLEDs, and demonstrated 6.8% in a working device.
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Submitted 12 November, 2021;
originally announced November 2021.
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Combining optical and magnetic resonance spectroscopies to probe charge recombination via triplet excitons in organic solar cells
Authors:
Alberto Privitera,
Jeannine Grune,
Akchheta Karki,
William K. Myers,
Vladimir Dyakonov,
Thuc-Quyen Nguyen,
Moritz K. Riede,
Richard H. Friend,
Andreas Sperlich,
Alexander J. Gillett
Abstract:
Organic solar cells (OSCs) have recently shown a rapid improvement in their performance, bringing power conversion efficiencies (PCEs) closer to the point where commercial applications of the technology become viable. However, the low open-circuit voltage (Voc) of OSCs relative to their optical gap still limits PCEs to below 20%. A key factor contributing to the large Voc deficit in OSCs is non-ra…
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Organic solar cells (OSCs) have recently shown a rapid improvement in their performance, bringing power conversion efficiencies (PCEs) closer to the point where commercial applications of the technology become viable. However, the low open-circuit voltage (Voc) of OSCs relative to their optical gap still limits PCEs to below 20%. A key factor contributing to the large Voc deficit in OSCs is non-radiative recombination to spin-triplet excitons, which is widely, but not universally, observed in blends using both fullerene and non-fullerene electron acceptors. Here, we present an experimental framework that combines time resolved optical and magnetic resonance spectroscopies to detect triplet excitons and identify their formation mechanisms. We apply our methodology to two well-studied polymer:fullerene systems, PM6:PC60BM and PTB7-Th:PC60BM, enabling us to selectively investigate distinct triplet formation pathways. In contrast to the more efficient non-fullerene acceptor systems that show only triplet states formed via non-geminate recombination, the fullerene systems also show significant triplet formation via geminate processes. We associate this with electrons trapped at the isolated fullerenes that sit within the alkyl sidechains of the donor polymers. Thus, our model study demonstrates how these complex and overlap** processes can be successfully deconvoluted to reveal the intricacies of triplet generation dynamics in OSC blends.
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Submitted 28 October, 2021;
originally announced October 2021.
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Charge Transfer in Ternary Solar Cells Employing Two Fullerene Derivatives: Where do Electrons Go?
Authors:
Andreas Sperlich,
Michael Auth,
Vladimir Dyakonov
Abstract:
Earlier reports demonstrated that ternary organic solar cells (OSC) made of donor polymers (D) blended with different mixtures of fullerene acceptors (A:A) performed very similarly. This finding is surprising, as the corresponding fullerene LUMO levels are slightly different, which might result in decisive differences in the charge transfer step. We investigate ternary OSC (D:A:A) made of the dono…
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Earlier reports demonstrated that ternary organic solar cells (OSC) made of donor polymers (D) blended with different mixtures of fullerene acceptors (A:A) performed very similarly. This finding is surprising, as the corresponding fullerene LUMO levels are slightly different, which might result in decisive differences in the charge transfer step. We investigate ternary OSC (D:A:A) made of the donor polymer P3HT with stoichiometric mixtures of different fullerene derivatives, PC60BM:PC70BM and PC70BM:IC60BA, respectively. Using quantitative electron paramagnetic resonance (EPR) we can distinguish between positive and negative polarons, localized on the specific molecules. We found that after the initial charge transfer step, the electrons are re-distributed over two nearby acceptors in agreement with their stoichiometry and their relative LUMO energy difference. Remarkably, the measured delta LUMO differences in fullerene mixtures are reduced by an order of magnitude compared to that of the pristine materials, i.e., below 1 meV for PC60BM:PC70BM and (20 +/- 5) meV for PC70BM:IC60BA. Furthermore, we found that this reduced delta LUMO explains the shift in open circuit voltage for D:A:A organic solar cells. We attribute these findings to hybridization, leading to an effective fullerene LUMO. Consequently, multi-acceptor blends are indeed a viable option for photodetectors and solar cells, as they combine the best electron acceptor and light absorbing properties.
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Submitted 22 October, 2021;
originally announced October 2021.
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Long-Lived Spin-Polarized Intermolecular Exciplex States in Thermally Activated Delayed Fluorescence-Based Organic Light-Emitting Diodes
Authors:
Sebastian Weissenseel,
Andreas Gottscholl,
Rebecca Bönnighausen,
Vladimir Dyakonov,
Andreas Sperlich
Abstract:
Spin-spin interactions in organic light-emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) are pivotal because radiative recombination is largely determined by triplet-to-singlet conversion, also called reverse intersystem crossing (RISC). To explore the underlying process, we apply a spin-resonance spectral hole-burning technique to probe electroluminescence. We find…
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Spin-spin interactions in organic light-emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) are pivotal because radiative recombination is largely determined by triplet-to-singlet conversion, also called reverse intersystem crossing (RISC). To explore the underlying process, we apply a spin-resonance spectral hole-burning technique to probe electroluminescence. We find that the triplet exciplex states in OLEDs are highly spin-polarized and show that these states can be decoupled from the heterogeneous nuclear environment as a source of spin dephasing and can even be coherently manipulated on a spin-spin relaxation time scale T2* of 30 ns. Crucially, we obtain the characteristic triplet exciplex spin-lattice relaxation time T1 in the range of 50 us, which far exceeds the RISC time. We conclude that slow spin relaxation rather than RISC is an efficiency-limiting step for intermolecular donor:acceptor systems. Finding TADF emitters with faster spin relaxation will benefit this type of TADF OLEDs.
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Submitted 18 November, 2021; v1 submitted 13 August, 2021;
originally announced August 2021.
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Sub-nanoscale Temperature, Magnetic Field and Pressure sensing with Spin Centers in 2D hexagonal Boron Nitride
Authors:
Andreas Gottscholl,
Matthias Diez,
Victor Soltamov,
Christian Kasper,
Andreas Sperlich,
Mehran Kianinia,
Carlo Bradac,
Igor Aharonovich,
Vladimir Dyakonov
Abstract:
Spin defects in solid-state materials are strong candidate systems for quantum information technology and sensing applications. Here we explore in details the recently discovered negatively charged boron vacancies ($V_B^-$) in hexagonal boron nitride (hBN) and demonstrate their use as atomic scale sensors for temperature, magnetic fields and externally applied pressure. These applications are poss…
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Spin defects in solid-state materials are strong candidate systems for quantum information technology and sensing applications. Here we explore in details the recently discovered negatively charged boron vacancies ($V_B^-$) in hexagonal boron nitride (hBN) and demonstrate their use as atomic scale sensors for temperature, magnetic fields and externally applied pressure. These applications are possible due to the high-spin triplet ground state and bright spin-dependent photoluminescence (PL) of the $V_B^-$. Specifically, we find that the frequency shift in optically detected magnetic resonance (ODMR) measurements is not only sensitive to static magnetic fields, but also to temperature and pressure changes which we relate to crystal lattice parameters. Our work is important for the future use of spin-rich hBN layers as intrinsic sensors in heterostructures of functionalized 2D materials.
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Submitted 22 February, 2021;
originally announced February 2021.
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Room Temperature Coherent Control of Spin Defects in hexagonal Boron Nitride
Authors:
Andreas Gottscholl,
Matthias Diez,
Victor Soltamov,
Christian Kasper,
Andreas Sperlich,
Mehran Kianinia,
Carlo Bradac,
Igor Aharonovich,
Vladimir Dyakonov
Abstract:
Optically active defects in solids with accessible spin states are promising candidates for solid state quantum information and sensing applications. To employ these defects as quantum building blocks, coherent manipulation of their spin state is required. Here we realize coherent control of ensembles of boron vacancy (V$_B^-$) centers in hexagonal boron nitride (hBN). Specifically, by applying pu…
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Optically active defects in solids with accessible spin states are promising candidates for solid state quantum information and sensing applications. To employ these defects as quantum building blocks, coherent manipulation of their spin state is required. Here we realize coherent control of ensembles of boron vacancy (V$_B^-$) centers in hexagonal boron nitride (hBN). Specifically, by applying pulsed spin resonance protocols, we measure spin-lattice relaxation time ($T_1$) of 18 $μ$s and spin coherence time ($T_2$) of 2 $μ$s at room temperature. The spin-lattice relaxation time increases by three orders of magnitude at cryogenic temperature. Furthermore, employing a two- and three-pulse electron spin-echo envelope modulation (ESEEM) we separate the quadrupole and hyperfine interactions with the surrounding nuclei. Finally, by applying a method to decouple the spin state from its inhomogeneous nuclear environment - a "hole-burning" - the spectral optically detected magnetic resonance linewidth is significantly reduced to several tens of kHz, thus extending the spin coherence time by a factor of three. Our results are important for employment of van der Waals materials for quantum technologies, specifically in the context of using hBN as a high-resolution quantum sensor for hybrid quantum systems including 2D heterostructures, nanoscale devices and emerging atomically thin magnets.
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Submitted 23 October, 2020;
originally announced October 2020.
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Thermal Activation Bottleneck in TADF OLEDs based on m-MTDATA:BPhen
Authors:
Nikolai Bunzmann,
Douglas L. Baird,
Hans Malissa,
Sebastian Weissenseel,
Christoph Boehme,
Vladimir Dyakonov,
Andreas Sperlich
Abstract:
Organic light emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) can be highly efficient because of the conversion of non-radiative triplet to radiative singlet states by reverse intersystem crossing (RISC). Even highly efficient TADF OLEDs are limited by long excited state lifetimes though, which limit current densities and cause device degradation. When singlet-trip…
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Organic light emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) can be highly efficient because of the conversion of non-radiative triplet to radiative singlet states by reverse intersystem crossing (RISC). Even highly efficient TADF OLEDs are limited by long excited state lifetimes though, which limit current densities and cause device degradation. When singlet-triplet energy gaps are comparable to thermal energies (~tens of millielectronvolts), RISC is fast and limited only by bottlenecks due to spin-selection rules. We have studied this phenomenon under device operating conditions using pulsed electrically detected magnetic resonance spectroscopy (pEDMR) in OLEDs based on the donor:acceptor combination m MTDATA:BPhen (4,4',4''-tris[phenyl(m-tolyl)amino]triphenylamine : 4,7 diphenyl-1,10-phenanthroline). These experiments showed magnetic resonance signatures of emissive exciplex states at the donor:acceptor interface, yet these signals did not reveal coherent spin propagation effects. Instead, the intensity of these signals scales linearly with the energy dose of the applied microwave pulses. This observation excludes the direct involvement of the resonantly prepared coherent spin states and indicates that the observed current response is due to magnetic resonant heating. This implies that the studied TADF blend is not limited by spin-forbidden RISC, but rather by the thermal activation step.
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Submitted 13 August, 2020;
originally announced August 2020.
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Kinetic Modeling of Transient Electroluminescence reveals TTA as Efficiency-Limiting Process in Exciplex-Based TADF OLEDs
Authors:
Jeannine Grüne,
Nikolai Bunzmann,
Moritz Meinecke,
Vladimir Dyakonov,
Andreas Sperlich
Abstract:
Organic light emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) show increased efficiencies due to efficient upconversion of non-emissive triplet states to emissive singlets states via reverse intersystem crossing (RISC). To assess the influence of the characteristic efficiency-enhancing RISC process as well as possible efficiency-limiting effects in operational OLED…
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Organic light emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) show increased efficiencies due to efficient upconversion of non-emissive triplet states to emissive singlets states via reverse intersystem crossing (RISC). To assess the influence of the characteristic efficiency-enhancing RISC process as well as possible efficiency-limiting effects in operational OLEDs, we performed temperature-dependent measurements of transient electroluminescence (trEL). With kinetic modeling, we quantify and separate the impact of different temperature-dependent depopulation processes and contributions to EL in the established donor:acceptor model system m-MTDATA:3TPYMB. The underlying rate equations adapted for EL measurements on TADF systems include radiative and non-radiative first- and second-order effects. In this way, we are able to evaluate the non-radiative recombination and annihilation processes with respect to their efficiency-limiting effects on these OLEDs. On the one hand, we evaluate the depopulation of intermolecular exciplex triplet states via non-radiative direct triplet decay, RISC and triplet-triplet annihilation (TTA). On the other hand, we determine the contribution to EL from the formation of singlet exciplex states via polarons, RISC and TTA. Our results show that TTA accounts for a significant part to triplet depopulation and contributes to EL while limiting the overall device quantum efficiency.
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Submitted 4 November, 2020; v1 submitted 17 July, 2020;
originally announced July 2020.
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Spin- and Voltage-dependent emission from Intra- and Intermolecular TADF OLEDs
Authors:
Nikolai Bunzmann,
Benjamin Krugmann,
Sebastian Weissenseel,
Liudmila Kudriashova,
Khrystyna Ivaniuk,
Pavlo Stakhira,
Vladyslav Cherpak,
Marian Chapran,
Gintare Grybauskaite-Kaminskiene,
Juozas Vidas Grazulevicius,
Vladimir Dyakonov,
Andreas Sperlich
Abstract:
Organic light emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) utilize molecular systems with a small energy splitting between singlet and triplet states. This can either be realized in intramolecular charge transfer states of molecules with near-orthogonal donor and acceptor moieties or in intermolecular exciplex states formed between a suitable combination of indi…
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Organic light emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) utilize molecular systems with a small energy splitting between singlet and triplet states. This can either be realized in intramolecular charge transfer states of molecules with near-orthogonal donor and acceptor moieties or in intermolecular exciplex states formed between a suitable combination of individual donor and acceptor materials. Here, we investigate 4,4'-(9H,9'H-[3,3'-bicarbazole]-9,9'-diyl)bis(3-(trifluoromethyl) benzonitrile) (pCNBCzoCF3), which shows intramolecular TADF but can also form exciplex states in combination with 4,4',4''-tris[phenyl(m-tolyl)amino]triphenylamine (m-MTDATA). Orange emitting exciplex-based OLEDs additionally generate a sky-blue emission from the intramolecular emitter with an intensity that can be voltage-controlled. We apply electroluminescence detected magnetic resonance (ELDMR) to study the thermally activated spin-dependent triplet to singlet up-conversion in operating devices. Thereby, we can investigate intermediate excited states involved in OLED operation and derive the corresponding activation energy for both, intra- and intermolecular based TADF. Furthermore, we give a lower estimate for the extent of the triplet wavefunction to be >1.2 nm. Photoluminescence detected magnetic resonance (PLDMR) reveals the population of molecular triplets in optically excited thin films. Overall, our findings allow us to draw a comprehensive picture of the spin-dependent emission from intra- and intermolecular TADF OLEDs.
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Submitted 27 January, 2021; v1 submitted 28 June, 2020;
originally announced June 2020.
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On the Absence of Triplet Exciton Loss Pathways in Non-Fullerene Acceptor based Organic Solar Cells
Authors:
Maria S. Kotova,
Giacomo Londi,
Johannes Junker,
Stefanie Dietz,
Alberto Privitera,
Kristofer Tvingstedt,
David Beljonne,
Andreas Sperlich,
Vladimir Dyakonov
Abstract:
We investigate the viability of highly efficient organic solar cells (OSCs) based on non-fullerene acceptors (NFA) by taking into consideration efficiency loss channels and stability issues caused by triplet excitons (TE) formation. OSCs based on a blend of the conjugated donor polymer PBDB-T and ITIC as acceptor were fabricated and investigated with electrical, optical and spin-sensitive methods.…
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We investigate the viability of highly efficient organic solar cells (OSCs) based on non-fullerene acceptors (NFA) by taking into consideration efficiency loss channels and stability issues caused by triplet excitons (TE) formation. OSCs based on a blend of the conjugated donor polymer PBDB-T and ITIC as acceptor were fabricated and investigated with electrical, optical and spin-sensitive methods. The spin-Hamiltonian parameters of molecular TEs and charge transfer TEs in ITIC e.g., zero-field splitting and charge distribution, were calculated by Density Functional Theory (DFT) modelling. In addition, the energetic model describing the photophysical processes in the donor-acceptor blend was derived. Spin-sensitive photoluminescence measurements prove the formation of charge transfer (CT) states in the blend and the formation of TEs in the pure materials and the blend. However, no molecular TE signal is observed in the completed devices under working conditions by spin-sensitive electrical measurements. The absence of a molecular triplet state population allows to eliminate a charge carrier loss channel and irreversible photooxidation facilitated by long-lived triplet states. These results correlate well with the high power conversion efficiency of the PBDB-T:ITIC-based OSCs and their high stability.
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Submitted 7 April, 2020; v1 submitted 18 February, 2020;
originally announced February 2020.
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Getting the Right Twist: Influence of Donor-Acceptor Dihedral Angle on Exciton Kinetics and Singlet-Triplet Gap in Deep Blue Thermally Activated Delayed Fluorescence Emitter
Authors:
Sebastian Weissenseel,
Nikita A. Drigo,
Liudmila G. Kudriashova,
Markus Schmid,
Thomas Morgenstern,
Kun-Han Lin,
Antonio Prlj,
Clémence Corminboeuf,
Andreas Sperlich,
Wolfgang Brütting,
Mohammad Khaja Nazeeruddin,
Vladimir Dyakonov
Abstract:
Here, a novel deep blue emitter SBABz4 for use in organic light-emitting diodes (OLED) is investigated. The molecular design of the emitter enables thermally activated delayed fluorescence (TADF), which we examine by temperature-dependent time-resolved electroluminescence (trEL) and photoluminescence (trPL). We show that the dihedral angle between donor and acceptor strongly affects the oscillator…
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Here, a novel deep blue emitter SBABz4 for use in organic light-emitting diodes (OLED) is investigated. The molecular design of the emitter enables thermally activated delayed fluorescence (TADF), which we examine by temperature-dependent time-resolved electroluminescence (trEL) and photoluminescence (trPL). We show that the dihedral angle between donor and acceptor strongly affects the oscillator strength of the charge transfer state alongside the singlet-triplet gap. The angular dependence of the singlet-triplet gap is calculated by time-dependent density functional theory (TD-DFT). A gap of 15 meV is calculated for the relaxed ground state configuration of SBABz4 with a dihedral angle between the donor and acceptor moieties of 86°. Surprisingly, an experimentally obtained energy gap of 72+/-5 meV can only be explained by torsion angles in the range of 70°-75°. Molecular dynamics (MD) simulations showed that SBABz4 evaporated at high temperature acquires a distribution of torsion angles, which immediately leads to the experimentally obtained energy gap. Moreover, the emitter orientation anisotropy in a host matrix shows an 80% ratio of horizontally oriented dipoles, which is highly desirable for efficient light outcoupling. Understanding intramolecular donor-acceptor geometry in evaporated films is crucial for OLED applications, because it affects oscillator strength and TADF efficiency.
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Submitted 28 October, 2019; v1 submitted 20 August, 2019;
originally announced August 2019.
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Influence of irradiation on defect spin coherence in silicon carbide
Authors:
C. Kasper,
D. Klenkert,
Z. Shang,
D. Simin,
A. Sperlich,
H. Kraus,
C. Schneider,
S. Zhou,
M. Trupke,
W. Kada,
T. Ohshima,
V. Dyakonov,
G. V. Astakhov
Abstract:
Irradiation-induced lattice defects in silicon carbide (SiC) have already exceeded their previous reputation as purely performance-inhibiting. With their remarkable quantum properties, such as long room-temperature spin coherence and the possibility of downscaling to single-photon source level, they have proven to be promising candidates for a multitude of quantum information applications. One of…
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Irradiation-induced lattice defects in silicon carbide (SiC) have already exceeded their previous reputation as purely performance-inhibiting. With their remarkable quantum properties, such as long room-temperature spin coherence and the possibility of downscaling to single-photon source level, they have proven to be promising candidates for a multitude of quantum information applications. One of the most crucial parameters of any quantum system is how long its quantum coherence can be preserved. By using the pulsed optically detected magnetic resonance (ODMR) technique, we investigate the spin-lattice relaxation time ($T_1$) and spin coherence time ($T_2$) of silicon vacancies in 4H-SiC created by neutron, electron and proton irradiation in a broad range of fluences. We also examine the effect of irradiation energy and sample annealing. We establish a robustness of the $T_1$ time against all types of irradiation and reveal a universal scaling of the $T_2$ time with the emitter density. Our results can be used to optimize the coherence properties of silicon vacancy qubits in SiC for specific tasks.
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Submitted 19 August, 2019;
originally announced August 2019.
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Optically and electrically excited intermediate electronic states in donor:acceptor based OLEDs
Authors:
Nikolai Bunzmann,
Sebastian Weissenseel,
Liudmila Kudriashova,
Jeannine Gruene,
Benjamin Krugmann,
Juozas Vidas Grazulevicius,
Andreas Sperlich,
Vladimir Dyakonov
Abstract:
Thermally activated delayed fluorescence (TADF) emitters consisting of donor and acceptor molecules are potentially highly interesting for electroluminescence (EL) applications. Their strong fluorescence emission is considered to be due to reverse intersystem crossing (RISC), in which energetically close triplet and singlet charge transfer (CT) states, also called exciplex states, are involved. In…
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Thermally activated delayed fluorescence (TADF) emitters consisting of donor and acceptor molecules are potentially highly interesting for electroluminescence (EL) applications. Their strong fluorescence emission is considered to be due to reverse intersystem crossing (RISC), in which energetically close triplet and singlet charge transfer (CT) states, also called exciplex states, are involved. In order to distinguish between different mechanisms and excited states involved, temperature-dependent spin-sensitive measurements on organic light-emitting diodes (OLEDs) and thin films are essential. In our work we apply continuous wave (cw) and time-resolved (tr) photoluminescence (PL) spectroscopy as well as spin-sensitive EL and PL detected magnetic resonance to films and OLED devices made of three different donor:acceptor combinations. Our results clearly show that triplet exciplex states are formed and contribute to delayed fluorescence (DF) via RISC in both electrically driven OLEDs and optically excited films. In the same sample set we also found molecular triplet excitons, which occurred only in PL experiments under optical excitation and for some material systems only at low temperatures. We conclude that in all investigated molecular systems exciplex states formed at the donor:acceptor interface are responsible for TADF in OLEDs with distinct activation energies. Molecular (local) triplet exciton states are also detectable, but only under optical excitation, while they are not found in OLEDs when excited states are generated electrically. We believe that the weakly bound emissive exciplex states and the strongly bound non-emissive molecular triplet excited states coexist in the TADF emitters, and it is imperative to distinguish between optical and electrical generation paths as they may involve different intermediate excited states.
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Submitted 10 January, 2020; v1 submitted 14 June, 2019;
originally announced June 2019.
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Room Temperature Initialisation and Readout of Intrinsic Spin Defects in a Van der Waals Crystal
Authors:
Andreas Gottscholl,
Mehran Kianinia,
Victor Soltamov,
Carlo Bradac,
Christian Kasper,
Klaus Krambrock,
Andreas Sperlich,
Milos Toth,
Igor Aharonovich,
Vladimir Dyakonov
Abstract:
Optically addressable spins in widebandgap semiconductors have become one of the most prominent platforms for exploring fundamental quantum phenomena. While several candidates in 3D crystals including diamond and silicon carbide have been extensively studied, the identification of spindependent processes in atomically thin 2D materials has remained elusive. Although optically accessible spin state…
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Optically addressable spins in widebandgap semiconductors have become one of the most prominent platforms for exploring fundamental quantum phenomena. While several candidates in 3D crystals including diamond and silicon carbide have been extensively studied, the identification of spindependent processes in atomically thin 2D materials has remained elusive. Although optically accessible spin states in hBN are theoretically predicted, they have not yet been observed experimentally. Here, employing rigorous electron paramagnetic resonance techniques and photoluminescence spectroscopy, we identify fluorescence lines in hexagonal boron nitride associated with a particular defect, the negatively charged boron vacancy and determine the parameters of its spin Hamiltonian. We show that the defect has a triplet ground state with a zero field splitting of 3.5 GHz and establish that the centre exhibits optically detected magnetic resonance at room temperature. We also demonstrate the spin polarization of this centre under optical pum**, which leads to optically induced population inversion of the spin ground state a prerequisite for coherent spin manipulation schemes. Our results constitute a leap forward in establishing two dimensional hBN as a prime platform for scalable quantum technologies, with extended potential for spin based quantum information and sensing applications, as our ODMR studies on hBN NV diamonds hybrid structures show.
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Submitted 9 June, 2019;
originally announced June 2019.
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Simultaneous inference for linear mixed model parameters with an application to small area estimation
Authors:
Katarzyna Reluga,
María José Lombardía,
Stefan Andreas Sperlich
Abstract:
Over the past decades, linear mixed models have attracted considerable attention in various fields of applied statistics. They are popular whenever clustered, hierarchical or longitudinal data are investigated. Nonetheless, statistical tools for valid simultaneous inference for mixed parameters are rare. This is surprising because one often faces inferential problems beyond the pointwise examinati…
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Over the past decades, linear mixed models have attracted considerable attention in various fields of applied statistics. They are popular whenever clustered, hierarchical or longitudinal data are investigated. Nonetheless, statistical tools for valid simultaneous inference for mixed parameters are rare. This is surprising because one often faces inferential problems beyond the pointwise examination of fixed or mixed parameters. For example, there is an interest in a comparative analysis of cluster-level parameters or subject-specific estimates in studies with repeated measurements. We discuss methods for simultaneous inference assuming a linear mixed model. Specifically, we develop simultaneous prediction intervals as well as multiple testing procedures for mixed parameters. They are useful for joint considerations or comparisons of cluster-level parameters. We employ a consistent bootstrap approximation of the distribution of max-type statistic to construct our tools. The numerical performance of the developed methodology is studied in simulation experiments and illustrated in a data example on household incomes in small areas.
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Submitted 16 September, 2021; v1 submitted 7 March, 2019;
originally announced March 2019.
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Excitation and coherent control of spin qudit modes with sub-MHz spectral resolution
Authors:
V. A. Soltamov,
C. Kasper,
A. V. Poshakinskiy,
A. N. Anisimov,
E. N. Mokhov,
A. Sperlich,
S. A. Tarasenko,
P. G. Baranov,
G. V. Astakhov,
V. Dyakonov
Abstract:
Quantum bit or qubit is a two-level system, which builds the foundation for quantum computation, simulation, communication and sensing. Quantum states of higher dimension, i.e., qutrits (D = 3) and especially qudits (D = 4 or higher), offer significant advantages. Particularly, they can provide noise-resistant quantum cryptography, simplify quantum logic and improve quantum metrology. Flying and s…
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Quantum bit or qubit is a two-level system, which builds the foundation for quantum computation, simulation, communication and sensing. Quantum states of higher dimension, i.e., qutrits (D = 3) and especially qudits (D = 4 or higher), offer significant advantages. Particularly, they can provide noise-resistant quantum cryptography, simplify quantum logic and improve quantum metrology. Flying and solid-state qudits have been implemented on the basis of photonic chips and superconducting circuits, respectively. However, there is still a lack of room-temperature qudits with long coherence time and high spectral resolution. The silicon vacancy centers in silicon carbide (SiC) with spin S = 3/2 are quite promising in this respect, but until now they were treated as a canonical qubit system. Here, we apply a two-frequency protocol to excite and image multiple qudit modes in a SiC spin ensemble under ambient conditions. Strikingly, their spectral width is about one order of magnitude narrower than the inhomogeneous broadening of the corresponding spin resonance. By applying Ramsey interferometry to these spin qudits, we achieve a spectral selectivity of 600 kHz and a spectral resolution of 30 kHz. As a practical consequence, we demonstrate absolute DC magnetometry insensitive to thermal noise and strain fluctuations.
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Submitted 26 July, 2018;
originally announced July 2018.
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Highly efficient optical pum** of spin defects in silicon carbide for stimulated microwave emission
Authors:
M. Fischer,
A. Sperlich,
H. Kraus,
T. Ohshima,
G. V. Astakhov,
V. Dyakonov
Abstract:
We investigate the pump efficiency of silicon vacancy-related spins in silicon carbide. For a crystal inserted into a microwave cavity with a resonance frequency of 9.4 GHz, the spin population inversion factor of 75 with the saturation optical pump power of about 350 mW is achieved at room temperature. At cryogenic temperature, the pump efficiency drastically increases, owing to an exceptionally…
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We investigate the pump efficiency of silicon vacancy-related spins in silicon carbide. For a crystal inserted into a microwave cavity with a resonance frequency of 9.4 GHz, the spin population inversion factor of 75 with the saturation optical pump power of about 350 mW is achieved at room temperature. At cryogenic temperature, the pump efficiency drastically increases, owing to an exceptionally long spin-lattice relaxation time exceeding one minute. Based on the experimental results, we find realistic conditions under which a silicon carbide maser can operate in continuous-wave mode and serve as a quantum microwave amplifier.
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Submitted 31 August, 2017;
originally announced September 2017.
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Locking of electron spin coherence over fifty milliseconds in natural silicon carbide
Authors:
D. Simin,
H. Kraus,
A. Sperlich,
T. Ohshima,
G. V. Astakhov,
V. Dyakonov
Abstract:
We demonstrate that silicon carbide (SiC) with natural isotope abundance can preserve a coherent spin superposition in silicon vacancies over unexpectedly long time approaching 0.1 seconds. The spin-locked subspace with drastically reduced decoherence rate is attained through the suppression of heteronuclear spin cross-talking by applying a moderate magnetic field in combination with dynamic decou…
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We demonstrate that silicon carbide (SiC) with natural isotope abundance can preserve a coherent spin superposition in silicon vacancies over unexpectedly long time approaching 0.1 seconds. The spin-locked subspace with drastically reduced decoherence rate is attained through the suppression of heteronuclear spin cross-talking by applying a moderate magnetic field in combination with dynamic decoupling from the nuclear spin baths. We identify several phonon-assisted mechanisms of spin-lattice relaxation, ultimately limiting quantum coherence, and find that it can be extremely long at cryogenic temperature, equal or even longer than 8 seconds. Our approach may be extended to other polyatomic compounds and open a path towards improved qubit memory for wafer-scale quantum techmologies.
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Submitted 10 November, 2016; v1 submitted 18 February, 2016;
originally announced February 2016.
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All-optical dc nanotesla magnetometry using silicon vacancy fine structure in isotopically purified silicon carbide
Authors:
D. Simin,
V. A. Soltamov,
A. V. Poshakinskiy,
A. N. Anisimov,
R. A. Babunts,
D. O. Tolmachev,
E. N. Mokhov,
M. Trupke,
S. A. Tarasenko,
A. Sperlich,
P. G. Baranov,
V. Dyakonov,
G. V. Astakhov
Abstract:
We uncover the fine structure of a silicon vacancy in isotopically purified silicon carbide (4H-$^{28}$SiC) and find extra terms in the spin Hamiltonian, originated from the trigonal pyramidal symmetry of this spin-3/2 color center. These terms give rise to additional spin transitions, which are otherwise forbidden, and lead to a level anticrossing in an external magnetic field. We observe a sharp…
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We uncover the fine structure of a silicon vacancy in isotopically purified silicon carbide (4H-$^{28}$SiC) and find extra terms in the spin Hamiltonian, originated from the trigonal pyramidal symmetry of this spin-3/2 color center. These terms give rise to additional spin transitions, which are otherwise forbidden, and lead to a level anticrossing in an external magnetic field. We observe a sharp variation of the photoluminescence intensity in the vicinity of this level anticrossing, which can be used for a purely all-optical sensing of the magnetic field. We achieve dc magnetic field sensitivity of 87 nT Hz$^{-1/2}$ within a volume of $3 \times 10^{-7}$ mm$^{3}$ at room temperature and demonstrate that this contactless method is robust at high temperatures up to at least 500 K. As our approach does not require application of radiofrequency fields, it is scalable to much larger volumes. For an optimized light-trap** waveguide of 3 mm$^{3}$ the projection noise limit is below 100 fT Hz$^{-1/2}$.
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Submitted 28 May, 2016; v1 submitted 15 November, 2015;
originally announced November 2015.
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High precision vector magnetometry with uniaxial quantum centers in silicon carbide
Authors:
D. Simin,
F. Fuchs,
H. Kraus,
A. Sperlich,
P. G. Baranov,
G. V. Astakhov,
V. Dyakonov
Abstract:
We show that uniaxial color centers in silicon carbide with hexagonal lattice structure can be used to measure not only the strength but also the polar angle of the external magnetic field with respect to the defect axis with high precision. The method is based on the optical detection of multiple spin resonances in the silicon vacancy defect with quadruplet ground state. We achieve a perfect agre…
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We show that uniaxial color centers in silicon carbide with hexagonal lattice structure can be used to measure not only the strength but also the polar angle of the external magnetic field with respect to the defect axis with high precision. The method is based on the optical detection of multiple spin resonances in the silicon vacancy defect with quadruplet ground state. We achieve a perfect agreement between the experimental and calculated spin resonance spectra without any fitting parameters, providing angle resolution of a few degrees in the magnetic field range up to several millitesla. Our approach is suitable for ensembles as well as for single spin-3/2 color centers, allowing for vector magnetometry on the nanoscale at ambient conditions.
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Submitted 1 May, 2015;
originally announced May 2015.
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Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide
Authors:
H. Kraus,
V. A. Soltamov,
F. Fuchs,
D. Simin,
A. Sperlich,
P. G. Baranov,
G. V. Astakhov,
V. Dyakonov
Abstract:
Quantum systems can provide outstanding performance in various sensing applications, ranging from bioscience to nanotechnology. Atomic-scale defects in silicon carbide are very attractive in this respect because of the technological advantages of this material and favorable optical and radio frequency spectral ranges to control these defects. We identified several, separately addressable spin-3/2…
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Quantum systems can provide outstanding performance in various sensing applications, ranging from bioscience to nanotechnology. Atomic-scale defects in silicon carbide are very attractive in this respect because of the technological advantages of this material and favorable optical and radio frequency spectral ranges to control these defects. We identified several, separately addressable spin-3/2 centers in the same silicon carbide crystal, which are immune to nonaxial strain fluctuations. Some of them are characterized by nearly temperature independent axial crystal fields, making these centers very attractive for vector magnetometry. Contrarily, the zero-field splitting of another center exhibits a giant thermal shift of -1.1 MHz/K at room temperature, which can be used for thermometry applications. We also discuss a synchronized composite clock exploiting spin centers with different thermal response.
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Submitted 30 March, 2014;
originally announced March 2014.
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Highly-Efficient Charge Separation and Polaron Delocalization in Polymer-Fullerene Bulk-Heterojunctions: A Comparative Multi-Frequency EPR & DFT Study
Authors:
Jens Niklas,
Kristy L. Mardis,
Brian P. Banks,
Gregory M. Grooms,
Andreas Sperlich,
Vladimir Dyakonov,
Serge Beaupré,
Mario Leclerc,
Tao Xu,
Lu** Yu,
Oleg G. Poluektov
Abstract:
The ongoing depletion of fossil fuels has led to an intensive search for additional renewable energy sources. Solar-based technologies could provide sufficient energy to satisfy the global economic demands in the near future. Photovoltaic (PV) cells are the most promising man-made devices for direct solar energy utilization. Understanding the charge separation and charge transport in PV materials…
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The ongoing depletion of fossil fuels has led to an intensive search for additional renewable energy sources. Solar-based technologies could provide sufficient energy to satisfy the global economic demands in the near future. Photovoltaic (PV) cells are the most promising man-made devices for direct solar energy utilization. Understanding the charge separation and charge transport in PV materials at a molecular level is crucial for improving the efficiency of the solar cells. Here, we use light-induced EPR spectroscopy combined with DFT calculations to study the electronic structure of charge separated states in blends of polymers (P3HT, PCDTBT, and PTB7) and fullerene derivatives (C60-PCBM and C70-PCBM). Solar cells made with the same composites as active layers show power conversion efficiencies of 3.3% (P3HT), 6.1% (PCDTBT), and 7.3% (PTB7), respectively. Under illumination of these composites, two paramagnetic species are formed due to photo-induced electron transfer between the conjugated polymer and the fullerene. They are the positive, P+, and negative, P-, polarons on the polymer backbone and fullerene cage, respectively, and correspond to radical cations and radical anions. Using the high spectral resolution of high-frequency EPR (130 GHz), the EPR spectra of these species were resolved and principal components of the g-tensors were assigned. Light-induced pulsed ENDOR spectroscopy allowed the determination of 1H hyperfine coupling constants of photogenerated positive and negative polarons. The experimental results obtained for the different polymer-fullerene composites have been compared with DFT calculations, revealing that in all three systems the positive polaron is distributed over distances of 40-60 A on the polymer chain. This corresponds to about 15 thiophene units for P3HT, approximately three units PCDTBT, and about three to four units for PTB7. No spin density...
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Submitted 29 May, 2013; v1 submitted 28 May, 2013;
originally announced May 2013.
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Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide
Authors:
D. Riedel,
F. Fuchs,
H. Kraus,
S. Vaeth,
A. Sperlich,
V. Dyakonov,
A. A. Soltamova,
P. G. Baranov,
V. A. Ilyin,
G. V. Astakhov
Abstract:
Several systems in the solid state have been suggested as promising candidates for spin-based quantum information processing. In spite of significant progress during the last decade, there is a search for new systems with higher potential [D. DiVincenzo, Nature Mat. 9, 468 (2010)]. We report that silicon vacancy defects in silicon carbide comprise the technological advantages of semiconductor quan…
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Several systems in the solid state have been suggested as promising candidates for spin-based quantum information processing. In spite of significant progress during the last decade, there is a search for new systems with higher potential [D. DiVincenzo, Nature Mat. 9, 468 (2010)]. We report that silicon vacancy defects in silicon carbide comprise the technological advantages of semiconductor quantum dots and the unique spin properties of the nitrogen-vacancy defects in diamond. Similar to atoms, the silicon vacancy qubits can be controlled under the double radio-optical resonance conditions, allowing for their selective addressing and manipulation. Furthermore, we reveal their long spin memory using pulsed magnetic resonance technique. All these results make silicon vacancy defects in silicon carbide very attractive for quantum applications.
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Submitted 1 October, 2012;
originally announced October 2012.
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Observation of bi-polarons in blends of conjugated copolymers and fullerene derivatives
Authors:
Tom J. Savenije,
Andreas Sperlich,
Hannes Kraus,
Oleg G. Poluektov,
Martin Heeney,
Vladimir Dyakonov
Abstract:
From a fundamental and application point of view it is of importance to understand how charge carrier generation and transport in a conjugated polymer (CP):fullerene blend are affected by the blend morphology. In this work light-induced electron spin resonance (LESR) spectra and transient ESR response signals are recorded on non-annealed and annealed blend layers consisting of alkyl substituted th…
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From a fundamental and application point of view it is of importance to understand how charge carrier generation and transport in a conjugated polymer (CP):fullerene blend are affected by the blend morphology. In this work light-induced electron spin resonance (LESR) spectra and transient ESR response signals are recorded on non-annealed and annealed blend layers consisting of alkyl substituted thieno[3,2-b]thiophene copolymers (pATBT) and the soluble fullerene derivative [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) at temperatures ranging from 10 to 180 K. Annealing of the blend sample leads to a reduction of the steady state concentration of light-induced PCBM anions within the blend at low temperatures (T = 10 K) and continuous illumination. This is explained on the basis of the reducing interfacial area of the blend composite on annealing, and the high activation energy for electron diffusion in PCBM blends leading to trapped electrons near the interface with the CP. As a consequence, these trapped electrons block consecutive electron transfer from an exciton on a CP to the PCBM domain, resulting in a relatively low concentration charge carriers in the annealed blend. Analysis of the transient ESR data allows us to conclude that in annealed samples diamagnetic bi-polaronic states on the CPs are generated at low temperature. The formation of these states is related to the generation and interaction of multiple positive polarons in the large crystalline polymer domains present in the annealed sample.
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Submitted 9 October, 2011;
originally announced October 2011.
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Spin Signatures of Photogenerated Radical Anions in Polymer-[70]Fullerene Bulk Heterojunctions: High Frequency Pulsed EPR Spectroscopy
Authors:
Oleg G. Poluektov,
Salvatore Filippone,
Nazario Martin,
Andreas Sperlich,
Carsten Deibel,
Vladimir Dyakonov
Abstract:
Charged polarons in thin films of polymer-fullerene composites are investigated by light-induced electron paramagnetic resonance (EPR) at 9.5 GHz (X-band) and 130 GHz (D-band). The materials studied were poly(3-hexylthiophene) (PHT), [6,6]-phenyl-C61-butyric acid methyl ester (C60-PCBM), and two different soluble C70-derivates: C70-PCBM and diphenylmethano[70]fullerene oligoether (C70-DPM-OE). The…
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Charged polarons in thin films of polymer-fullerene composites are investigated by light-induced electron paramagnetic resonance (EPR) at 9.5 GHz (X-band) and 130 GHz (D-band). The materials studied were poly(3-hexylthiophene) (PHT), [6,6]-phenyl-C61-butyric acid methyl ester (C60-PCBM), and two different soluble C70-derivates: C70-PCBM and diphenylmethano[70]fullerene oligoether (C70-DPM-OE). The first experimental identification of the negative polaron localized on the C70-cage in polymer-fullerene bulk heterojunctions has been obtained. When recorded at conventional X-band EPR, this signal is overlap** with the signal of the positive polaron, which does not allow for its direct experimental identification. Owing to the superior spectral resolution of the high frequency D-band EPR, we were able to separate light-induced signals from P+ and P- in PHT-C70 bulk heterojunctions. Comparing signals from C70-derivatives with different side-chains, we have obtained experimental proof that the polaron is localized on the cage of the C70 molecule.
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Submitted 7 October, 2011;
originally announced October 2011.
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Reversible and Irreversible Interactions of Poly(3-hexylthiophene) with Oxygen Studied by Spin-Sensitive Methods
Authors:
Andreas Sperlich,
Hannes Kraus,
Carsten Deibel,
Hubert Blok,
Jan Schmidt,
Vladimir Dyakonov
Abstract:
Understanding of degradation mechanisms in polymer:fullerene bulk-heterojunctions on the microscopic level aimed at improving their intrinsic stability is crucial for the breakthrough of organic photovoltaics. These materials are vulnerable to exposure to light and/or oxygen, hence they involve electronic excitations. To unambiguously probe the excited states of various multiplicities and their re…
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Understanding of degradation mechanisms in polymer:fullerene bulk-heterojunctions on the microscopic level aimed at improving their intrinsic stability is crucial for the breakthrough of organic photovoltaics. These materials are vulnerable to exposure to light and/or oxygen, hence they involve electronic excitations. To unambiguously probe the excited states of various multiplicities and their reactions with oxygen, we applied combined magneto-optical methods based on multifrequency (9 and 275 GHz) electron paramagnetic resonance (EPR), photoluminescence (PL), and PL-detected magnetic resonance (PLDMR) to the conjugated polymer poly(3-hexylthiophene) (P3HT) and polymer:fullerene bulk heterojunctions (P3HT:PCBM; PCBM = [6,6]-phenyl-C61-butyric acid methyl ester). We identified two distinct photochemical reaction routes, one being fully reversible and related to the formation of polymer:oxygen charge transfer complexes, the other one, irreversible, being related to the formation of singlet oxygen under participation of bound triplet excitons on the polymer chain. With respect to the blends, we discuss the protective effect of the methanofullerenes on the conjugated polymer bypassing the triplet exciton generation.
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Submitted 30 December, 2011; v1 submitted 6 October, 2011;
originally announced October 2011.
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Detailed study of N,N'-(diisopropylphenyl)- terrylene-3,4:11,12-bis(dicarboximide) as electron acceptor for solar cells application
Authors:
Julien Gorenflot,
Andreas Sperlich,
Andreas Baumann,
Daniel Rauh,
Aleksey Vasilev,
Chen Li,
Martin Baumgarten,
Carsten Deibel,
Vladimir Dyakonov
Abstract:
We report on terrylene-3,4:11,12-bis(dicarboximide) (TDI) as electron acceptor for bulk-heterojunction solar cells using poly(3-hexyl thiophene) (P3HT) as complementary donor component. Enhanced absorption was observed in the blend compared to pure P3HT. As shown by the very efficient photoluminescence (PL) quenching, the generated excitons are collected at the interface between the donor and acce…
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We report on terrylene-3,4:11,12-bis(dicarboximide) (TDI) as electron acceptor for bulk-heterojunction solar cells using poly(3-hexyl thiophene) (P3HT) as complementary donor component. Enhanced absorption was observed in the blend compared to pure P3HT. As shown by the very efficient photoluminescence (PL) quenching, the generated excitons are collected at the interface between the donor and acceptor, where they separate into charges which we detect by photoinduced absorption and electron-spin resonance (ESR). Time-of-flight (TOF) photoconductivity measurements reveal a good electron mobility of 10-3 cm2 V-1 s-1 in the blend. Nevertheless, the photocurrent in solar cells was found to be surprisingly low. Supported by the external quantum efficiency (EQE) spectrum as well as morphological studies by way of X-ray diffraction and atomic force microscopy, we explain our observation by the formation of a TDI hole blocking layer at the anode interface which prevents the efficiently generated charges to be extracted.
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Submitted 4 October, 2011;
originally announced October 2011.
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Direct Detection of Photoinduced Charge Transfer Complexes in Polymer:Fullerene Blends
Authors:
Jan Behrends,
Andreas Sperlich,
Alexander Schnegg,
Till Biskup,
Christian Teutloff,
Klaus Lips,
Vladimir Dyakonov,
Robert Bittl
Abstract:
We report transient electron paramagnetic resonance (trEPR) measurements with sub-microsecond time resolution performed on a P3HT:PCBM blend at low temperature. The trEPR spectrum immediately following photoexcitation reveals signatures of spin-correlated polaron pairs. The pair partners (positive polarons in P3HT and negative polarons in PCBM) can be identified by their characteristic g-values. T…
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We report transient electron paramagnetic resonance (trEPR) measurements with sub-microsecond time resolution performed on a P3HT:PCBM blend at low temperature. The trEPR spectrum immediately following photoexcitation reveals signatures of spin-correlated polaron pairs. The pair partners (positive polarons in P3HT and negative polarons in PCBM) can be identified by their characteristic g-values. The fact that the polaron pair states exhibit strong non-Boltzmann population unambiguously shows that the constituents of each pair are geminate, i.e. originate from one exciton. We demonstrate that coupled polaron pairs are present even several microseconds after charge transfer and suggest that they embody the intermediate charge transfer complexes which form at the donor/acceptor interface and mediate the conversion from excitons into free charge carriers.
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Submitted 11 April, 2012; v1 submitted 28 July, 2011;
originally announced July 2011.
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Triplet Exciton Generation in Bulk-Heterojunction Solar Cells based on Endohedral Fullerenes
Authors:
Moritz Liedtke,
Andreas Sperlich,
Hannes Kraus,
Andreas Baumann,
Carsten Deibel,
Maarten J. M. Wirix,
Joachim Loos,
Claudia M. Cardona,
Vladimir Dyakonov
Abstract:
Organic bulk-heterojunctions (BHJ) and solar cells containing the trimetallic nitride endohedral fullerene 1-[3-(2-ethyl)hexoxy carbonyl]propyl-1-phenyl-Lu3N@C80 (Lu3N@C80-PCBEH) show an open circuit voltage (VOC) 0.3 V higher than similar devices with [6,6]-phenyl-C[61]-butyric acid methyl ester (PC61BM). To fully exploit the potential of this acceptor molecule with respect to the power conversio…
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Organic bulk-heterojunctions (BHJ) and solar cells containing the trimetallic nitride endohedral fullerene 1-[3-(2-ethyl)hexoxy carbonyl]propyl-1-phenyl-Lu3N@C80 (Lu3N@C80-PCBEH) show an open circuit voltage (VOC) 0.3 V higher than similar devices with [6,6]-phenyl-C[61]-butyric acid methyl ester (PC61BM). To fully exploit the potential of this acceptor molecule with respect to the power conversion efficiency (PCE) of solar cells, the short circuit current (JSC) should be improved to become competitive with the state of the art solar cells. Here, we address factors influencing the JSC in blends containing the high voltage absorber Lu3N@C80-PCBEH in view of both photogeneration but also transport and extraction of charge carriers. We apply optical, charge carrier extraction, morphology, and spin-sensitive techniques. In blends containing Lu3N@C80-PCBEH, we found 2 times weaker photoluminescence quenching, remainders of interchain excitons, and, most remarkably, triplet excitons formed on the polymer chain, which were absent in the reference P3HT:PC61BM blends. We show that electron back transfer to the triplet state along with the lower exciton dissociation yield due to intramolecular charge transfer in Lu3N@C80-PCBEH are responsible for the reduced photocurrent.
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Submitted 18 July, 2011;
originally announced July 2011.
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Photoinduced C70 radical anions in polymer:fullerene blends
Authors:
Andreas Sperlich,
Moritz Liedtke,
Julia Kern,
Hannes Kraus,
Carsten Deibel,
Salvatore Filippone,
Juan Luis Delgado,
Nazario Martín,
Vladimir Dyakonov
Abstract:
Photoinduced polarons in solid films of polymer-fullerene blends were studied by photoluminescence (PL), photoinduced absorption (PIA) and electron spin resonance (ESR). The donor materials used were P3HT and MEH-PPV. As acceptors we employed PC60BM as reference and various soluble C70-derivates: PC70BM, two different diphenylmethano-[70]fullerene oligoether (C70-DPM-OE) and two dimers, C70-C70 an…
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Photoinduced polarons in solid films of polymer-fullerene blends were studied by photoluminescence (PL), photoinduced absorption (PIA) and electron spin resonance (ESR). The donor materials used were P3HT and MEH-PPV. As acceptors we employed PC60BM as reference and various soluble C70-derivates: PC70BM, two different diphenylmethano-[70]fullerene oligoether (C70-DPM-OE) and two dimers, C70-C70 and C60-C70. Blend films containing C70 revealed characteristic spectroscopic signatures not seen with C60. Light-induced ESR showed signals at g\geq2.005, assigned to an electron localized on the C70 cage. The formation of C70 radical anions also leads to a subgap PIA band at 0.92 eV, hidden in the spectra of C70-based P3HT and MEH-PPV blends, which allows for more exact studies of charge separated states in conjugated polymer:C70 blends.
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Submitted 9 February, 2011;
originally announced February 2011.
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Spectroscopic Signatures of Photogenerated Radical Anions in Polymer-[C70]Fullerene Bulk Heterojunctions
Authors:
M. Liedtke,
A. Sperlich,
H. Kraus,
C. Deibel,
V. Dyakonov,
S. Filippone,
J. L. Delgado,
N. Martin,
O. G. Poluektov
Abstract:
Light induced polarons in solid films of polymer-fullerene blends were studied by applying photoluminescence (PL), photo induced absorption (PIA) techniques as well as electron spin resonance (ESR). The materials used were poly(3-hexylthiophene) (P3HT) and poly-[2-methoxy, 5-(2'-ethyl-hexyloxy) phenylene vinylene] (MEH-PPV) as donors. As acceptors we used [6,6]-phenyl-C61-butyric acid methyl ester…
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Light induced polarons in solid films of polymer-fullerene blends were studied by applying photoluminescence (PL), photo induced absorption (PIA) techniques as well as electron spin resonance (ESR). The materials used were poly(3-hexylthiophene) (P3HT) and poly-[2-methoxy, 5-(2'-ethyl-hexyloxy) phenylene vinylene] (MEH-PPV) as donors. As acceptors we used [6,6]-phenyl-C61-butyric acid methyl ester ([C60]PCBM) and various soluble C70-derivates: [C70]PCBM, diphenylmethano[70]fullerene oligoether (C70-DPM-OE), C70-DPM-OE2, and two fullerene dimers, C70-C70 and C60-C70 (all shown in figure 1). In all blends containing C70 we found typical signatures which were absent if [C60]PCBM was used as acceptor. Light-induced ESR revealed signals at g>=2.005, which we previously assigned to an electron localized on the C70 cage, the PIA measurements showed a new sub-bandgap absorption band at 0.92 eV, which we correspondingly ascribe to C70 radical anions formed in the course of photoinduced electron transfer from donor to acceptor.
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Submitted 9 July, 2010;
originally announced July 2010.