Plasma Profiling Time-of-Flight Mass Spectrometry for Fast Elemental Analysis of Semiconductor Structures with Depth Resolution in the Nanometer Range
Authors:
Hendrik Spende,
Christoph Margenfeld,
Tobias Meyer,
Irene Manglano Clavero,
Heiko Bremers,
Andreas Hangleiter,
Michael Seibt,
Andreas Waag,
Andrey Bakin
Abstract:
Plasma profiling time of flight mass spectrometry (PP-TOFMS) has recently gained interest, as it enables the elemental profiling of semiconductor structures with high depth resolution in short acquisition times. As recently shown by Tempez et al., PP-TOFMS can be used to obtain the composition in the structures for modern field effect transistors [1]. There, the results were compared to convention…
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Plasma profiling time of flight mass spectrometry (PP-TOFMS) has recently gained interest, as it enables the elemental profiling of semiconductor structures with high depth resolution in short acquisition times. As recently shown by Tempez et al., PP-TOFMS can be used to obtain the composition in the structures for modern field effect transistors [1]. There, the results were compared to conventional SIMS measurements. In the present study, we compare PP-TOFMS measurements of an Al-/In-/GaN quantum well multi stack to established micro- and nano-analysis techniques like cathodoluminescence (CL), scanning transmission electron microscopy (STEM), energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD). We show that PP-TOFMS is able to resolve the layer structure of the sample even more than 500 nm deep into the sample and allows the determination of a relative elemental composition with an accuracy of about 10 rel. %. Therefore, it is an extremely rapid alternative method to obtain semiconductor elemental depth profiles without expensive and time consuming sample preparation as it is needed for TEM. Besides, PP-TOFMS offers better depth resolution and more elemental information than for example electrochemical capacitance-voltage (ECV), as the acquisition of all elements occurs in parallel and not only electrically (ECV) or optically (CL) active elements are observed.
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Submitted 2 December, 2019; v1 submitted 27 September, 2019;
originally announced September 2019.
Liquid metal intercalation of epitaxial graphene: large-area gallenene layer fabrication through gallium self-propagation at ambient conditions
Authors:
S. Wundrack,
D. Momeni Pakdehi,
W. Dempwolf,
N. Schmidt,
K. Pierz,
L. Michaliszyn,
H. Spende,
A. Schmidt,
H. W. Schumacher,
R. Stosch,
A. Bakin
Abstract:
We demonstrate the fabrication of an ultra thin gallium film, also known as gallenene, beneath epitaxial graphene on 6H-SiC under ambient conditions triggered by liquid gallium intercalation. Gallenene has been fabricated using the liquid metal intercalation, achieving lateral intercalation and diffusion of Ga atoms at room temperature on square centimeter areas limited only by the graphene sample…
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We demonstrate the fabrication of an ultra thin gallium film, also known as gallenene, beneath epitaxial graphene on 6H-SiC under ambient conditions triggered by liquid gallium intercalation. Gallenene has been fabricated using the liquid metal intercalation, achieving lateral intercalation and diffusion of Ga atoms at room temperature on square centimeter areas limited only by the graphene samples' size. The stepwise self-propagation of the gallenene film below the epitaxial graphene surface on the macroscopic scale was observed by optical microscopy shortly after the initial processing without further physical or chemical treatment. Directional Ga diffusion of gallenene occurs on SiC terraces since the terrace steps form an energetic barrier (Ehrlich-Schwoebel barrier),retarding the gallenene propagation. The subsequent conversion of the epitaxial graphene into quasi free-standing bilayer graphene (QFBLG) and the graphene-gallenene heterostack interactions have been analyzed by XPS and Raman measurements. The results reveal a novel approach for controlled fabrication of wafer-scale gallenene as well as for two-dimensional heterostructures and stacks based on the interaction between liquid metal and epitaxial graphene.
Please note, this work was also titled as Graphene meets gallenene -- A straightforward approach to develo** large-area heterostacks by gallium self-propagation https://www.researchgate.net/publication/333451130_Graphene_meets_gallenene_-_A_straightforward_approach_to_develo**_large-area_heterostacks_by_gallium_self-propagation
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Submitted 16 July, 2020; v1 submitted 29 May, 2019;
originally announced May 2019.
