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The James Webb Space Telescope Mission
Authors:
Jonathan P. Gardner,
John C. Mather,
Randy Abbott,
James S. Abell,
Mark Abernathy,
Faith E. Abney,
John G. Abraham,
Roberto Abraham,
Yasin M. Abul-Huda,
Scott Acton,
Cynthia K. Adams,
Evan Adams,
David S. Adler,
Maarten Adriaensen,
Jonathan Albert Aguilar,
Mansoor Ahmed,
Nasif S. Ahmed,
Tanjira Ahmed,
Rüdeger Albat,
Loïc Albert,
Stacey Alberts,
David Aldridge,
Mary Marsha Allen,
Shaune S. Allen,
Martin Altenburg
, et al. (983 additional authors not shown)
Abstract:
Twenty-six years ago a small committee report, building on earlier studies, expounded a compelling and poetic vision for the future of astronomy, calling for an infrared-optimized space telescope with an aperture of at least $4m$. With the support of their governments in the US, Europe, and Canada, 20,000 people realized that vision as the $6.5m$ James Webb Space Telescope. A generation of astrono…
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Twenty-six years ago a small committee report, building on earlier studies, expounded a compelling and poetic vision for the future of astronomy, calling for an infrared-optimized space telescope with an aperture of at least $4m$. With the support of their governments in the US, Europe, and Canada, 20,000 people realized that vision as the $6.5m$ James Webb Space Telescope. A generation of astronomers will celebrate their accomplishments for the life of the mission, potentially as long as 20 years, and beyond. This report and the scientific discoveries that follow are extended thank-you notes to the 20,000 team members. The telescope is working perfectly, with much better image quality than expected. In this and accompanying papers, we give a brief history, describe the observatory, outline its objectives and current observing program, and discuss the inventions and people who made it possible. We cite detailed reports on the design and the measured performance on orbit.
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Submitted 10 April, 2023;
originally announced April 2023.
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Trap** in irradiated p-on-n silicon sensors at fluences anticipated at the HL-LHC outer tracker
Authors:
W. Adam,
T. Bergauer,
M. Dragicevic,
M. Friedl,
R. Fruehwirth,
M. Hoch,
J. Hrubec,
M. Krammer,
W. Treberspurg,
W. Waltenberger,
S. Alderweireldt,
W. Beaumont,
X. Janssen,
S. Luyckx,
P. Van Mechelen,
N. Van Remortel,
A. Van Spilbeeck,
P. Barria,
C. Caillol,
B. Clerbaux,
G. De Lentdecker,
D. Dobur,
L. Favart,
A. Grebenyuk,
Th. Lenzi
, et al. (663 additional authors not shown)
Abstract:
The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $μ$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determi…
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The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $μ$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determine the charge collection efficiencies separately for electrons and holes drifting through the sensor. The effective trap** rates are extracted by comparing the results to simulation. The electric field is simulated using Synopsys device simulation assuming two effective defects. The generation and drift of charge carriers are simulated in an independent simulation based on PixelAV. The effective trap** rates are determined from the measured charge collection efficiencies and the simulated and measured time-resolved current pulses are compared. The effective trap** rates determined for both electrons and holes are about 50% smaller than those obtained using standard extrapolations of studies at low fluences and suggests an improved tracker performance over initial expectations.
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Submitted 7 May, 2015;
originally announced May 2015.
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Observation of the rare $B^0_s\toμ^+μ^-$ decay from the combined analysis of CMS and LHCb data
Authors:
The CMS,
LHCb Collaborations,
:,
V. Khachatryan,
A. M. Sirunyan,
A. Tumasyan,
W. Adam,
T. Bergauer,
M. Dragicevic,
J. Erö,
M. Friedl,
R. Frühwirth,
V. M. Ghete,
C. Hartl,
N. Hörmann,
J. Hrubec,
M. Jeitler,
W. Kiesenhofer,
V. Knünz,
M. Krammer,
I. Krätschmer,
D. Liko,
I. Mikulec,
D. Rabady,
B. Rahbaran
, et al. (2807 additional authors not shown)
Abstract:
A joint measurement is presented of the branching fractions $B^0_s\toμ^+μ^-$ and $B^0\toμ^+μ^-$ in proton-proton collisions at the LHC by the CMS and LHCb experiments. The data samples were collected in 2011 at a centre-of-mass energy of 7 TeV, and in 2012 at 8 TeV. The combined analysis produces the first observation of the $B^0_s\toμ^+μ^-$ decay, with a statistical significance exceeding six sta…
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A joint measurement is presented of the branching fractions $B^0_s\toμ^+μ^-$ and $B^0\toμ^+μ^-$ in proton-proton collisions at the LHC by the CMS and LHCb experiments. The data samples were collected in 2011 at a centre-of-mass energy of 7 TeV, and in 2012 at 8 TeV. The combined analysis produces the first observation of the $B^0_s\toμ^+μ^-$ decay, with a statistical significance exceeding six standard deviations, and the best measurement of its branching fraction so far. Furthermore, evidence for the $B^0\toμ^+μ^-$ decay is obtained with a statistical significance of three standard deviations. The branching fraction measurements are statistically compatible with SM predictions and impose stringent constraints on several theories beyond the SM.
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Submitted 17 August, 2015; v1 submitted 17 November, 2014;
originally announced November 2014.
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Isometries of the Hilbert Metric
Authors:
Timothy Speer
Abstract:
On any convex domain in $\mathbb{R}^n$ we can define the Hilbert metric. A projective transformation is an example of an isometry of the Hilbert metric. In this thesis we will prove that the group of projective transformations on a convex domain has at most index 2 in the group of isometries of the convex domain with its Hilbert metric. Furthermore we will give criteria for which the set of projec…
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On any convex domain in $\mathbb{R}^n$ we can define the Hilbert metric. A projective transformation is an example of an isometry of the Hilbert metric. In this thesis we will prove that the group of projective transformations on a convex domain has at most index 2 in the group of isometries of the convex domain with its Hilbert metric. Furthermore we will give criteria for which the set of projective transformations between two convex domains is equal to the set of isometries of the Hilbert metric of these convex domains. Lastly we will show that $2$-dimensional convex domains with their corresponding Hilbert metrics are isometric if and only if they are projectively equivalent.
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Submitted 6 November, 2014;
originally announced November 2014.
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Single Top production at CMS
Authors:
Thomas Speer
Abstract:
A first measurement of the cross section of single top quark production in the t channel in pp collision at sqrt(s)=7 TeV is presented. The measurement is performed on a data sample corresponding to an integrated luminosity of 35.9 pb^-1 recorded at the LHC with the CMS detector. Leptonic decay channels with an electron or a muon in the final state are considered. After a selection optimized for t…
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A first measurement of the cross section of single top quark production in the t channel in pp collision at sqrt(s)=7 TeV is presented. The measurement is performed on a data sample corresponding to an integrated luminosity of 35.9 pb^-1 recorded at the LHC with the CMS detector. Leptonic decay channels with an electron or a muon in the final state are considered. After a selection optimized for the t-channel mode, two different and complementary analyses have been performed. Both analyses confirm the Tevatron's observation of single top, and their combination measures a cross section of sigma = 83.6 +/- 29.8(stat.+syst.) +/- 3.3 (lumi.) pb, which is consistent with the Standard Model prediction.
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Submitted 11 October, 2011;
originally announced October 2011.
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B, D and K decays
Authors:
G. Buchalla,
T. K. Komatsubara,
F. Muheim,
L. Silvestrini,
M. Artuso,
D. M. Asner,
P. Ball,
E. Baracchini,
G. Bell,
M. Beneke,
J. Berryhill,
A. Bevan,
I. I. Bigi,
M. Blanke,
Ch. Bobeth,
M. Bona,
F. Borzumati,
T. Browder,
T. Buanes,
O. Buchmuller,
A. J. Buras,
S. Burdin,
D. G. Cassel,
R. Cavanaugh,
M. Ciuchini
, et al. (102 additional authors not shown)
Abstract:
With the advent of the LHC, we will be able to probe New Physics (NP) up to energy scales almost one order of magnitude larger than it has been possible with present accelerator facilities. While direct detection of new particles will be the main avenue to establish the presence of NP at the LHC, indirect searches will provide precious complementary information, since most probably it will not b…
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With the advent of the LHC, we will be able to probe New Physics (NP) up to energy scales almost one order of magnitude larger than it has been possible with present accelerator facilities. While direct detection of new particles will be the main avenue to establish the presence of NP at the LHC, indirect searches will provide precious complementary information, since most probably it will not be possible to measure the full spectrum of new particles and their couplings through direct production. In particular, precision measurements and computations in the realm of flavour physics are expected to play a key role in constraining the unknown parameters of the Lagrangian of any NP model emerging from direct searches at the LHC. The aim of Working Group 2 was twofold: on one hand, to provide a coherent, up-to-date picture of the status of flavour physics before the start of the LHC; on the other hand, to initiate activities on the path towards integrating information on NP from high-pT and flavour data.
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Submitted 11 January, 2008;
originally announced January 2008.
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A Short Study of Alexandroff Spaces
Authors:
Timothy Speer
Abstract:
In this paper, we discuss the basic properties of Alexandroff spaces. Several examples of Alexandroff spaces are given. We show how to construct new Alexandroff spaces from given ones. Finally, two invariants for compact Alexandroff spaces are defined and calculated for the given examples.
In this paper, we discuss the basic properties of Alexandroff spaces. Several examples of Alexandroff spaces are given. We show how to construct new Alexandroff spaces from given ones. Finally, two invariants for compact Alexandroff spaces are defined and calculated for the given examples.
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Submitted 16 August, 2007;
originally announced August 2007.
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Design and performance of the silicon sensors for the CMS barrel pixel detector
Authors:
Y. Allkofer,
C. Amsler,
D. Bortoletto,
V. Chiochia,
L. Cremaldi,
S. Cucciarelli,
A. Dorokhov,
C. Hoermann,
R. Horisberger,
D. Kim,
M. Konecki,
D. Kotlinski,
K. Prokofiev,
C. Regenfus,
T. Rohe,
D. A. Sanders,
S. Son,
M. Swartz,
T. Speer
Abstract:
The CMS experiment at the LHC includes a hybrid silicon pixel detector for the reconstruction of charged tracks and of the interaction vertices. The barrel region consists of n-in-n sensors with 100X150 um^2 cell size processed on diffusion oxygenated float zone silicon. A biasing grid is implemented and pixel isolation is achieved with the moderated p-spray technique. An extensive test program…
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The CMS experiment at the LHC includes a hybrid silicon pixel detector for the reconstruction of charged tracks and of the interaction vertices. The barrel region consists of n-in-n sensors with 100X150 um^2 cell size processed on diffusion oxygenated float zone silicon. A biasing grid is implemented and pixel isolation is achieved with the moderated p-spray technique. An extensive test program was carried out on the H2 beam line of the CERN SPS. In this paper we describe the sensor layout, the beam test setup and the results obtained with both irradiated and non-irradiated prototype devices. Measurements of charge collection, hit detection efficiency, Lorentz angle and spatial resolution are presented.
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Submitted 12 February, 2007;
originally announced February 2007.
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Simulation of Heavily Irradiated Silicon Pixel Detectors
Authors:
M. Swartz,
V. Chiochia,
Y. Allkofer,
C. Amsler,
D. Bortoletto,
L. Cremaldi,
S. Cucciarelli,
A. Dorokhov,
C. Hoermann,
D. Kim,
M. Konecki,
D. Kotlinski,
K. Prokofiev,
C. Regenfus,
T. Rohe,
D. A. Sanders,
S. Son,
T. Speer
Abstract:
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trap** of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14}…
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We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trap** of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective do** density. This observation calls into question the practice of using effective do** densities to characterize irradiated silicon. The model is now being used to calibrate pixel hit reconstruction algorithms for CMS.
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Submitted 24 May, 2006;
originally announced May 2006.
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Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors
Authors:
M. Swartz,
V. Chiochia,
Y. Allkofer,
D. Bortoletto,
L. Cremaldi,
S. Cucciarelli,
A. Dorokhov,
C. Hoermann,
D. Kim,
M. Konecki,
D. Kotlinski,
K. Prokofiev,
C. Regenfus,
T. Rohe,
D. A. Sanders,
S. Son,
T. Speer
Abstract:
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trap** of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14}…
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We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trap** of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective do** density. This observation calls into question the practice of using effective do** densities to characterize irradiated silicon.
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Submitted 5 January, 2006; v1 submitted 5 October, 2005;
originally announced October 2005.
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A double junction model of irradiated silicon pixel sensors for LHC
Authors:
V. Chiochia,
M. Swartz,
Y. Allkofer,
D. Bortoletto,
L. Cremaldi,
S. Cucciarelli,
A. Dorokhov,
C. Hoermann,
D. Kim,
M. Konecki,
D. Kotlinski,
K. Prokofiev,
C. Regenfus,
T. Rohe,
D. A. Sanders,
S. Son,
M. Swartz,
T. Speer
Abstract:
In this paper we discuss the measurement of charge collection in irradiated silicon pixel sensors and the comparison with a detailed simulation. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trap** of charge carriers. The modeling proves that a doubly peaked electric field generated by the two defect levels is necessary to…
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In this paper we discuss the measurement of charge collection in irradiated silicon pixel sensors and the comparison with a detailed simulation. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trap** of charge carriers. The modeling proves that a doubly peaked electric field generated by the two defect levels is necessary to describe the data and excludes a description based on acceptor defects uniformly distributed across the sensor bulk. In addition, the dependence of trap concentrations upon fluence is established by comparing the measured and simulated profiles at several fluences and bias voltages.
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Submitted 30 June, 2005;
originally announced June 2005.
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Extraction of electric field in heavily irradiated silicon pixel sensors
Authors:
A. Dorokhov,
Y. Allkofer,
C. Amsler,
D. Bortoletto,
V. Chiochia,
L. Cremaldi,
S. Cucciarelli,
C. Hoermann,
D. Kim,
M. Konecki,
D. Kotlinski,
K. Prokofiev,
C. Regenfus,
T. Rohe,
D. Sanders,
S. Son,
T. Speer,
M. Swartz
Abstract:
A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements were made at the CERN H2 beam line, with the beam at a shallow angle with respect to the pixel sensor surface. The extracted electric field is used to…
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A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements were made at the CERN H2 beam line, with the beam at a shallow angle with respect to the pixel sensor surface. The extracted electric field is used to simulate the charge collection and the Lorentz deflection in the pixel sensor. The simulated charge collection and the Lorentz deflection is in good agreement with the measurements both for non-irradiated and irradiated up to 1E15 neq/cm2 sensors.
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Submitted 25 June, 2005; v1 submitted 6 December, 2004;
originally announced December 2004.
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Fluence Dependence of Charge Collection of irradiated Pixel Sensors
Authors:
T. Rohe,
D. Bortoletto,
V. Chiochia,
L. M. Cremaldi,
S. Cucciarelli,
A. Dorokhov,
C. Hoermann,
D. Kim,
M. Konecki,
D. Kotlinski,
K. Prokofiev,
C. Regenfus,
D. A. Sanders,
S. Son,
T. Speer,
M. Swartz
Abstract:
The barrel region of the CMS pixel detector will be equipped with ``n-in-n'' type silicon sensors. They are processed on DOFZ material, use the moderated p-spray technique and feature a bias grid. The latter leads to a small fraction of the pixel area to be less sensitive to particles. In order to quantify this inefficiency prototype pixel sensors irradiated to particle fluences between…
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The barrel region of the CMS pixel detector will be equipped with ``n-in-n'' type silicon sensors. They are processed on DOFZ material, use the moderated p-spray technique and feature a bias grid. The latter leads to a small fraction of the pixel area to be less sensitive to particles. In order to quantify this inefficiency prototype pixel sensors irradiated to particle fluences between $4.7\times 10^{13}$ and $2.6\times 10^{15} \Neq$ have been bump bonded to un-irradiated readout chips and tested using high energy pions at the H2 beam line of the CERN SPS. The readout chip allows a non zero suppressed analogue readout and is therefore well suited to measure the charge collection properties of the sensors.
In this paper we discuss the fluence dependence of the collected signal and the particle detection efficiency. Further the position dependence of the efficiency is investigated.
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Submitted 4 January, 2005; v1 submitted 23 November, 2004;
originally announced November 2004.
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Simulation of Heavily Irradiated Silicon Pixel Sensors and Comparison with Test Beam Measurements
Authors:
Vincenzo Chiochia,
Morris Swartz,
Daniela Bortoletto,
Lucien Cremaldi,
Susanna Cucciarelli,
Andrei Dorokhov,
Christoph Hoermann,
Dongwook Kim,
Marcin Konecki,
Danek Kotlinski,
Kirill Prokofiev,
Christian Regenfus,
Tilman Rohe,
David A. Sanders,
Seunghee Son,
Thomas Speer
Abstract:
Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trap** and charge induction effects. A linearly varying electric field based upon the standar…
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Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trap** and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective do** density is inconsistent with the data. A two-trap double junction model implemented in the ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of charge trap** observed in the data.
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Submitted 4 May, 2005; v1 submitted 16 November, 2004;
originally announced November 2004.
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Type inversion in irradiated silicon: a half truth
Authors:
M. Swartz,
D. Bortoletto,
V. Chiochia,
L. Cremaldi,
S. Cucciarelli,
A. Dorokhov,
M. Konecki,
K. Prokofiev,
C. Regenfus,
T. Rohe,
D. A. Sanders,
S. Son,
T. Speer
Abstract:
Charge collection measurements performed on heavily irradiated p-spray dofz pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trap** and charge induction effects. A linearly varying electric field based upon the standar…
▽ More
Charge collection measurements performed on heavily irradiated p-spray dofz pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trap** and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective do** density is inconsistent with the data. A two-trap double junction model implemented in ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well at two different fluences. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of signal trap** observed in the data.
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Submitted 13 September, 2004; v1 submitted 9 September, 2004;
originally announced September 2004.
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Position Dependence of Charge Collection in Prototype Sensors for the CMS Pixel Detector
Authors:
T. Rohe,
D. Bortoletto,
V. Chiochia,
L. M. Cremaldi,
S. Cucciarelli,
A. Dorokhov,
M. Konecki,
K. Prokofiev,
C. Regenfus,
D. A. Sanders,
S. Son,
T. Speer,
M. Swartz
Abstract:
This paper reports on the sensor R&D activity for the CMS pixel detector. Devices featuring several design and technology options have been irradiated up to a proton fluencec of 1E15 n_eq/cm**2 at the CERN PS. Afterward they were bump bonded to unirradiated readout chips and tested using high energy pions in the H2 beam line of the CERN SPS. The readout chip allows a non zero suppressed full ana…
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This paper reports on the sensor R&D activity for the CMS pixel detector. Devices featuring several design and technology options have been irradiated up to a proton fluencec of 1E15 n_eq/cm**2 at the CERN PS. Afterward they were bump bonded to unirradiated readout chips and tested using high energy pions in the H2 beam line of the CERN SPS. The readout chip allows a non zero suppressed full analogue readout and therefore a good characterization of the sensors in terms of noise and charge collection properties. The position dependence of signal is presented and the differences between the two sensor options are discussed.
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Submitted 31 August, 2004; v1 submitted 2 December, 2003;
originally announced December 2003.
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Tests of silicon sensors for the CMS pixel detector
Authors:
A. Dorokhov,
C. Amsler,
D. Bortoletto,
V. Chiochia,
L. Cremaldi,
S. Cucciarelli,
M. Konecki,
K. Prokofiev,
C. Regenfus,
T. Rohe,
D. Sanders,
S. Son,
T. Speer,
M. Swartz
Abstract:
The tracking system of the CMS experiment, currently under construction at the Large Hadron Collider (LHC) at CERN (Geneva, Switzerland), will include a silicon pixel detector providing three spacial measurements in its final configuration for tracks produced in high energy pp collisions. In this paper we present the results of test beam measurements performed at CERN on irradiated silicon pixel…
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The tracking system of the CMS experiment, currently under construction at the Large Hadron Collider (LHC) at CERN (Geneva, Switzerland), will include a silicon pixel detector providing three spacial measurements in its final configuration for tracks produced in high energy pp collisions. In this paper we present the results of test beam measurements performed at CERN on irradiated silicon pixel sensors. Lorentz angle and charge collection efficiency were measured for two sensor designs and at various bias voltages.
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Submitted 11 November, 2003;
originally announced November 2003.
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Vertex reconstruction framework and its implementation for CMS
Authors:
T. Boccali,
R. Fruhwirth,
W. Waltenberger,
K. Prokofiev,
T. Speer,
P. Vanlaer
Abstract:
The class framework developed for vertex reconstruction in CMS is described. We emphasize how we proceed to develop a flexible, efficient and reliable piece of reconstruction software. We describe the decomposition of the algorithms into logical parts, the mathematical toolkit, and the way vertex reconstruction integrates into the CMS reconstruction project ORCA. We discuss the tools that we hav…
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The class framework developed for vertex reconstruction in CMS is described. We emphasize how we proceed to develop a flexible, efficient and reliable piece of reconstruction software. We describe the decomposition of the algorithms into logical parts, the mathematical toolkit, and the way vertex reconstruction integrates into the CMS reconstruction project ORCA. We discuss the tools that we have developed for algorithm evaluation and optimization and for code release.
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Submitted 2 June, 2003;
originally announced June 2003.
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New vertex reconstruction algorithms for CMS
Authors:
R. Fruehwirth,
W. Waltenberger,
K. Prokofiev,
T. Speer,
P. Vanlaer,
E. Chabanat,
N. Estre
Abstract:
The reconstruction of interaction vertices can be decomposed into a pattern recognition problem (``vertex finding'') and a statistical problem (``vertex fitting''). We briefly review classical methods. We introduce novel approaches and motivate them in the framework of high-luminosity experiments like at the LHC. We then show comparisons with the classical methods in relevant physics channels
The reconstruction of interaction vertices can be decomposed into a pattern recognition problem (``vertex finding'') and a statistical problem (``vertex fitting''). We briefly review classical methods. We introduce novel approaches and motivate them in the framework of high-luminosity experiments like at the LHC. We then show comparisons with the classical methods in relevant physics channels
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Submitted 1 June, 2003;
originally announced June 2003.
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The CDF-II Online Silicon Vertex Tracker
Authors:
A. Bardi,
A. Belloni,
R. Carosi,
A. Cerri,
G. Chlachidze,
M. Dell'Orso,
S. Donati,
S. Galeotti,
P. Giannetti,
V. Glagolev,
E. Meschi,
F. Morsani,
D. Passuello,
G. Punzi,
L. Ristori,
A. Semenov,
F. Spinella,
A. Barchiesi,
M. Rescigno,
S. Sarkar,
L. Zanello,
M. Bari,
S. Belforte,
A. M. Zanetti,
I. Fiori
, et al. (14 additional authors not shown)
Abstract:
The Online Silicon Vertex Tracker is the new CDF-II level 2 trigger processor designed to reconstruct 2-D tracks within the Silicon Vertex Detector with high speed and accuracy. By performing a precise measurement of impact parameters the SVT allows tagging online B events which typically show displaced secondary vertices. Physics simulations show that this will greatly enhance the CDF-II B-phys…
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The Online Silicon Vertex Tracker is the new CDF-II level 2 trigger processor designed to reconstruct 2-D tracks within the Silicon Vertex Detector with high speed and accuracy. By performing a precise measurement of impact parameters the SVT allows tagging online B events which typically show displaced secondary vertices. Physics simulations show that this will greatly enhance the CDF-II B-physics capability. The SVT has been fully assembled and operational since the beginning of Tevatron RunII in April 2001. In this paper we briefly review the SVT design and physics motivation and then describe its performance during the early phase (April-October 2001) of run II.
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Submitted 10 December, 2001;
originally announced December 2001.
