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Epitaxially Driven Phase Selectivity of Sn in Hybrid Quantum Nanowires
Authors:
Sabbir A. Khan,
Sara Martí-Sánchez,
Dags Olsteins,
Charalampos Lampadaris,
Damon James Carrad,
Yu Liu,
Judith Quiñones,
Maria Chiara Spadaro,
Thomas S. Jespersen,
Peter Krogstrup,
Jordi Arbiol
Abstract:
Hybrid semiconductor/superconductor nanowires constitute a pervasive platform for studying gate-tunable superconductivity and the emergence of topological behavior. Their low-dimensionality and crystal structure flexibility facilitate novel heterostructure growth and efficient material optimization; crucial prerequisites for accurately constructing complex multi-component quantum materials. Here,…
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Hybrid semiconductor/superconductor nanowires constitute a pervasive platform for studying gate-tunable superconductivity and the emergence of topological behavior. Their low-dimensionality and crystal structure flexibility facilitate novel heterostructure growth and efficient material optimization; crucial prerequisites for accurately constructing complex multi-component quantum materials. Here, we present an extensive optimization of Sn growth on InSb, InAsSb and InAs nanowires. We demonstrate how the growth conditions and the crystal structure/symmetry of the semiconductor drive the formation of either semi-metallic $\mathrm{α-Sn}$ or superconducting $\mathrm{β-Sn}$. For InAs nanowires, we obtain phase-pure, superconducting $\mathrm{β-Sn}$ shells. However, for InSb and InAsSb nanowires, an initial epitaxial $\mathrm{α-Sn}$ phase evolves into a polycrystalline shell of coexisting $\mathrmα$ and $\mathrmβ$ phases, where the $β/α$ volume ratio increases with Sn shell thickness. Whether these nanowires exhibit superconductivity or not critically relies on the $\mathrm{β-Sn}$ content. Therefore, this work provides key insights into Sn phase control on a variety of semiconductors, with consequences for the yield of superconducting hybrids suitable for generating topological systems.
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Submitted 2 January, 2023; v1 submitted 26 December, 2022;
originally announced December 2022.
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Doubling the mobility of InAs/InGaAs selective area grown nanowires
Authors:
Daria V. Beznasyuk,
Sara Martí-Sánchez,
Jung-Hyun Kang,
Rawa Tanta,
Mohana Rajpalke,
Tomaš Stankevič,
Anna Wulff Christensen,
Maria Chiara Spadaro,
Roberto Bergamaschini,
Nikhil N. Maka,
Christian Emanuel N. Petersen,
Damon J. Carrad,
Thomas Sand Jespersen,
Jordi Arbiol,
Peter Krogstrup
Abstract:
Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics and quantum devices based on III-V semiconductor materials. The potential of high-mobility SAG nanowires however is not yet fully realized, since interfacial roughness, misfit dislocations at the nanowire/substrate interface and non-uniform composition due to material intermixing all scatte…
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Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics and quantum devices based on III-V semiconductor materials. The potential of high-mobility SAG nanowires however is not yet fully realized, since interfacial roughness, misfit dislocations at the nanowire/substrate interface and non-uniform composition due to material intermixing all scatter electrons. Here, we explore SAG of highly lattice-mismatched InAs nanowires on insulating GaAs(001) substrates and address these key challenges. Atomically smooth nanowire/substrate interfaces are achieved with the use of atomic hydrogen (a-H) as an alternative to conventional thermal annealing for the native oxide removal. The problem of high lattice mismatch is addressed through an In$_x$Ga$_{1-x}$As buffer layer introduced between the InAs transport channel and the GaAs substrate. The Ga-In material intermixing observed in both the buffer layer and the channel is inhibited via careful tuning of the growth temperature. Performing scanning transmission electron microscopy and x-ray diffraction analysis along with low-temperature transport measurements we show that optimized In-rich buffer layers promote high quality InAs transport channels with the field-effect electron mobility over~10000~cm$^2$V$^{-1}$s$^{-1}$. This is twice as high as for non-optimized samples and among the highest reported for InAs selective area grown nanostructures.
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Submitted 4 February, 2022; v1 submitted 29 March, 2021;
originally announced March 2021.
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Insights into image contrast from dislocations in ADF-STEM
Authors:
E. Oveisi,
M. C. Spadaro,
E. Rotunno,
V. Grillo,
C. Hebert
Abstract:
Competitive mechanisms contribute to image contrast from dislocations in annular dark field scanning transmission electron microscopy ADF STEM. A clear theoretical understanding of the mechanisms underlying the ADF STEM contrast is therefore essential for correct interpretation of dislocation images. This paper reports on a systematic study of the ADF STEM contrast from dislocations in a GaN speci…
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Competitive mechanisms contribute to image contrast from dislocations in annular dark field scanning transmission electron microscopy ADF STEM. A clear theoretical understanding of the mechanisms underlying the ADF STEM contrast is therefore essential for correct interpretation of dislocation images. This paper reports on a systematic study of the ADF STEM contrast from dislocations in a GaN specimen, both experimentally and computationally. Systematic experimental ADF STEM images of the edge character dislocations revealed a number of characteristic contrast features that are shown to depend on both the angular detection range and specific position of the dislocation in the sample. A theoretical model based on electron channelling and Bloch wave scattering theories, supported by multislice simulations using Grillo s strain channelling equation, is proposed to elucidate the physical origin of such complex contrast phenomena.
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Submitted 25 May, 2020; v1 submitted 20 May, 2020;
originally announced May 2020.
