Evidence for a pressure-induced phase transition of few-layer graphene to 2D diamond
Authors:
Luiz G. Pimenta Martins,
Diego L. Silva,
Jesse S. Smith,
Ang-Yu Lu,
Cong Su,
Marek Hempel,
Connor Occhialini,
Xiang Ji,
Ricardo Pablo,
Rafael S. Alencar,
Alan C. R. Souza,
Alan B. de Oliveira,
Ronaldo J. C. Batista,
Tomás Palacios,
Matheus J. S. Matos,
Mário S. C. Mazzoni,
Riccardo Comin,
**g Kong,
Luiz G. Cançado
Abstract:
We unveil the diamondization mechanism of few-layer graphene compressed in the presence of water, providing robust evidence for the pressure-induced formation of 2D diamond. High-pressure Raman spectroscopy provides evidence of a phase transition occurring in the range of 4-7 GPa for 5-layer graphene and graphite. The pressure-induced phase is partially transparent and indents the silicon substrat…
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We unveil the diamondization mechanism of few-layer graphene compressed in the presence of water, providing robust evidence for the pressure-induced formation of 2D diamond. High-pressure Raman spectroscopy provides evidence of a phase transition occurring in the range of 4-7 GPa for 5-layer graphene and graphite. The pressure-induced phase is partially transparent and indents the silicon substrate. Our combined theoretical and experimental results indicate a gradual top-bottom diamondization mechanism, consistent with the formation of diamondene, a 2D ferromagnetic semiconductor. High-pressure x-ray diffraction on graphene indicates the formation of hexagonal diamond, consistent with the bulk limit of eclipsed-conformed diamondene.
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Submitted 16 October, 2019; v1 submitted 3 October, 2019;
originally announced October 2019.
