Showing 1–11 of 11 results for author: Sousa, R C

Field-free all-optical switching and electrical read-out of Tb/Co-based magnetic tunnel junctions

Authors: D. Salomoni, Y. Peng, L. Farcis, S. Auffret, M. Hehn, G. Malinowski, S. Mangin, B. Dieny, L. D. Buda-Prejbeanu, R. C. Sousa, I. L. Prejbeanu

Abstract: Switching of magnetic tunnel junction using femto-second laser enables a possible path for THz frequency memory operation, which means writing speeds 2 orders of magnitude faster than alternative electrical approaches based on spin transfer or spin orbit torque. In this work we demonstrate successful field-free 50fs single laser pulse driven magnetization reversal of [Tb/Co] based storage layer in… ▽ More Switching of magnetic tunnel junction using femto-second laser enables a possible path for THz frequency memory operation, which means writing speeds 2 orders of magnitude faster than alternative electrical approaches based on spin transfer or spin orbit torque. In this work we demonstrate successful field-free 50fs single laser pulse driven magnetization reversal of [Tb/Co] based storage layer in a perpendicular magnetic tunnel junction. The nanofabricated magnetic tunnel junction devices have an optimized bottom reference electrode and show Tunnel Magnetoresistance Ratio values (TMR) up to 74\% after patterning down to sub-100nm lateral dimensions. Experiments on continuous films reveal peculiar reversal patterns of concentric rings with opposite magnetic directions, above certain threshold fluence. These rings have been correlated to patterned device switching probability as a function of the applied laser fluence. Moreover, the magnetization reversal is independent on the duration of the laser pulse. According to our macrospin model, the underlying magnetization reversal mechanism can be attributed to an in-plane reorientation of the magnetization due to a fast reduction of the out-of-plane uniaxial anisotropy. These aspects are of great interest both for the physical understanding of the switching phenomenon and their consequences for all-optical-switching memory devices, since they allow for a large fluence operation window with high resilience to pulse length variability. △ Less

Submitted 24 May, 2023; originally announced May 2023.

In plane reorientation induced single laser pulse magnetization reversal in rare-earth based multilayer

Authors: Y. Peng, D. Salomoni, G. Malinowski, W. Zhang, J. Hohlfeld, L. D. Buda-Prejbeanu, J. Gorchon, M. Vergès, J. X. Lin, R. C. Sousa, I. L. Prejbeanu, S. Mangin, M. Hehn

Abstract: Single Pulse All Optical Helicity Independent Switching (AO-HIS) represents the ability to reverse the magnetic moment of a nanostructure using a femtosecond single laser pulse. It is an ultrafast method to manipulate magnetization without the use of any applied field. Since the first switching experiments carried on GdFeCo ferrimagnetic systems, single pulse AO-HIS has been restricted for a while… ▽ More Single Pulse All Optical Helicity Independent Switching (AO-HIS) represents the ability to reverse the magnetic moment of a nanostructure using a femtosecond single laser pulse. It is an ultrafast method to manipulate magnetization without the use of any applied field. Since the first switching experiments carried on GdFeCo ferrimagnetic systems, single pulse AO-HIS has been restricted for a while to Gd-based alloys or Gd/FM bilayers where FM is a ferromagnetic layer. Only recently has AO-HIS been extended to a few other materials: MnRuGa ferrimagnetic Heusler alloys and Tb/Co multilayers with a very specific range of thickness and composition. Here, we demonstrate that single pulse AO-HIS observed in Tb/Co results from a different mechanism than the one for Gd based samples and that it can be obtained for a large range of rare earth-transition metal (RE-TM) multilayers, making this phenomenon much more general. Surprisingly, in this large family of (RE-TM) multilayer systems, the threshold fluence for switching is observed to be independent of the pulse duration, up to at least 12 ps. Moreover, at high laser intensities, concentric ring domain structures are induced, unveiling multiple fluence thresholds. These striking switching features, which are in contrast to those of AO-HIS in GdFeCo alloys, concomitant with the demonstration of an in-plane reorientation of the magnetization, point towards an intrinsic precessional reversal mechanism. Our results allow expanding the variety of materials with tunable magnetic properties that can be integrated in complex heterostructures and provide a pathway to engineer materials for future applications based on all-optical control of magnetic order. △ Less

Submitted 26 December, 2022; originally announced December 2022.

Direct observation of the perpendicular shape anisotropy and thermal stability of p-STT-MRAM nano-pillars

Authors: Trevor P. Almeida, Steven Lequeux, Alvaro Palomino, Ricardo C. Sousa, Olivier Fruchart, Ioan Lucian Prejbeanu, Bernard Dieny, Aurélien Masseboeuf, David Cooper

Abstract: Perpendicular shape anisotropy (PSA) offers a practical solution to downscale spin-transfer torque Magnetic Random-Access Memory (STT-MRAM) beyond the sub-20 nm technology node whilst retaining thermal stability of the storage layer magnetization. However, our understanding of the thermomagnetic behavior of PSA-STT-MRAM is often indirect, relying on magnetoresistance measurements and micromagnetic… ▽ More Perpendicular shape anisotropy (PSA) offers a practical solution to downscale spin-transfer torque Magnetic Random-Access Memory (STT-MRAM) beyond the sub-20 nm technology node whilst retaining thermal stability of the storage layer magnetization. However, our understanding of the thermomagnetic behavior of PSA-STT-MRAM is often indirect, relying on magnetoresistance measurements and micromagnetic modelling. Here, the magnetism of a FeCoB / NiFe PSA-STT-MRAM nano-pillar is investigated using off-axis electron holography, providing spatially resolved magnetic information as a function of temperature, which has been previously inaccessible. Magnetic induction maps reveal the micromagnetic configuration of the NiFe storage layer (60 nm high, 20 nm diameter), confirming the PSA induced by its 3:1 aspect ratio. In-situ heating demonstrates that the PSA of the FeCoB / NiFe composite storage layer is maintained up to at least 250 degrees centigrade, and direct quantitative measurements reveal the very moderate decrease of magnetic induction with temperature. Hence, this study shows explicitly that PSA provides significant stability in STT-MRAM applications that require reliable performance over a range of operating temperatures. △ Less

Submitted 2 February, 2022; originally announced February 2022.

All-optical spin switching probability in [Tb/Co] multilayers

Authors: Luis Avilés-Félix, Louis Farcis, Zebin **, Laura Álvaro-Gómez, Gunqiao Li, Kihiro T. Yamada, Andrei Kirilyuk, Aleksey V. Kimel, Theo Rasing, Bernard Dieny, Ricardo C. Sousa, Ioan-Lucian Prejbeanu, Liliana D. Buda-Prejbeanu

Abstract: Since the first experimental observation of all-optical switching phenomena, intensive research has been focused on finding suitable magnetic systems that can be integrated as storage elements within spintronic devices and whose magnetization can be controlled through ultra-short single laser pulses. We report here atomistic spin simulations of all-optical switching in multilayered structures alte… ▽ More Since the first experimental observation of all-optical switching phenomena, intensive research has been focused on finding suitable magnetic systems that can be integrated as storage elements within spintronic devices and whose magnetization can be controlled through ultra-short single laser pulses. We report here atomistic spin simulations of all-optical switching in multilayered structures alternating n monolayers of Tb and m monolayers of Co. By using a two temperature model, we numerically calculate the thermal variation of the magnetization of each sublattice as well as the magnetization dynamics of [Tbn/Com] multilayers upon incidence of a single laser pulse. In particular, the condition to observe thermally-induced magnetization switching is investigated upon varying systematically both the composition of the sample (n,m) and the laser fluence. The samples with one monolayer of Tb as [Tb1/Co2] and [Tb1/Co3] are showing thermally induced magnetization switching above a fluence threshold. The reversal mechanism is mediated by the residual magnetization of the Tb lattice while the Co is fully demagnetized in agreement with the models developed for ferrimagnetic alloys. The switching is however not fully deterministic but the error rate can be tuned by the dam** parameter. Increasing the number of monolayers the switching becomes completely stochastic. The intermixing at the Tb/Co interfaces appears to be a promising way to reduce the stochasticity. These results predict for the first time the possibility of TIMS in [Tb/Co] multilayers and suggest the occurrence of sub-picosecond magnetization reversal using single laser pulses. △ Less

Submitted 8 March, 2021; originally announced March 2021.

Comments: 9 pages, 4 figures

Magnetization reversal driven by spin-transfer-torque in perpendicular shape anisotropy magnetic tunnel junctions

Authors: N. Caçoilo, S. Lequeux, B. M. S. Teixeira, B. Dieny, R. C. Sousa, N. A. Sobolev, O. Fruchart, I. L. Prejbeanu, L. D. Buda-Prejbeanu

Abstract: The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape anisotropy in the magnetic storage layer. Making use of that contribution, the downsize scalability of the STT-MRAM may be extended towards sub-20 nm technologica… ▽ More The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape anisotropy in the magnetic storage layer. Making use of that contribution, the downsize scalability of the STT-MRAM may be extended towards sub-20 nm technological nodes, thanks to a reinforcement of the thermal stability factor $Δ$. Although the larger storage layer thickness improves $Δ$, it is expected to negatively impact the writing current and switching time. Hence, optimization of the cell dimensions (diameter, thickness) is of utmost importance for attaining a sufficiently high $Δ$ while kee** a moderate writing current. Micromagnetic simulations were carried out for different pillar thicknesses of fixed lateral size 20 nm. The switching time and the reversal mechanism were analysed as a function of the applied voltage and aspect-ratio (AR) of the storage layer. For AR $<$ 1, the magnetization reversal resembles a macrospin-like mechanism, while for AR $>$ 1 a non-coherent reversal is observed, characterized by the nucleation of a transverse domain wall at the ferromagnet/insulator interface which then propagates along the vertical axis of the pillar. It was further observed that the inverse of the switching time is linearly dependent on the applied voltage. This study was extended to sub-20 nm width with a value of $Δ$ around 80. It was observed that the voltage necessary to reverse the magnetic layer increases as the lateral size is reduced, accompanied with a transition from macrospin-reversal to a buckling-like reversal at high aspect-ratios. △ Less

Submitted 21 April, 2021; v1 submitted 12 May, 2020; originally announced May 2020.

Comments: 7 pages with a total of 8 figures

Journal ref: Phys. Rev. Applied 16, 024020 (2021)

Realizing an Isotropically Coercive Magnetic Layer for Memristive Applications by Analogy to Dry Friction

Authors: Marco Mansueto, Antoine Chavent, Stephane Auffret, Isabelle Joumard, Jayshankar Nath, Ioan M. Miron, Ursula Ebels, Ricardo C. Sousa, Liliana D. Buda-Prejbeanu, Ioan L. Prejbeanu, Bernard Dieny

Abstract: We investigate the possibility of realizing a spintronic memristive device based on the dependence of the tunnel conductance on the relative angle between the magnetization of the two magnetic electrodes in in-plane magnetized tunnel junctions. For this, it is necessary to design a free layer whose magnetization can be stabilized along several or even any in-plane direction between the parallel an… ▽ More We investigate the possibility of realizing a spintronic memristive device based on the dependence of the tunnel conductance on the relative angle between the magnetization of the two magnetic electrodes in in-plane magnetized tunnel junctions. For this, it is necessary to design a free layer whose magnetization can be stabilized along several or even any in-plane direction between the parallel and the antiparallel magnetic configurations. We experimentally show that this can be achieved by exploiting antiferromagnet-ferromagnet exchange interactions in a regime where the antiferromagnet is thin enough to induce enhanced coercivity and no exchange bias. The frustration of exchange interactions at the interfaces due to competing ferro- and antiferromagnetic interactions is at the origin of an isotropic dissipation mechanism yielding isotropic coercivity. From a modeling point of view, it is shown that this isotropic dissipation can be described by a dry friction term in the Landau-Lifshitz-Gilbert equation. The influence of this dry friction term on the magnetization dynamics of an in-plane magnetized layer submitted to a rotating in-plane field is investigated both analytically and numerically. The possibility to control the free layer magnetization orientation in an in-plane magnetized magnetic tunnel junction by using the spin transfer torque from an additional perpendicular polarizer is also investigated through macrospin simulation. It is shown that the memristor function can be achieved by the injection of current pulses through the stack in the presence of an in-plane static field transverse to the reference layer magnetization, the aim of which is to limit the magnetization rotation between 0° and 180°. △ Less

Submitted 19 March, 2020; originally announced March 2020.

Comments: 24 pages, 9 figures

Brazilian Lyrics-Based Music Genre Classification Using a BLSTM Network

Authors: Raul de Araújo Lima, Rômulo César Costa de Sousa, Simone Diniz Junqueira Barbosa, Hélio Cortês Vieira Lopes

Abstract: Organize songs, albums, and artists in groups with shared similarity could be done with the help of genre labels. In this paper, we present a novel approach for automatic classifying musical genre in Brazilian music using only the song lyrics. This kind of classification remains a challenge in the field of Natural Language Processing. We construct a dataset of 138,368 Brazilian song lyrics distrib… ▽ More Organize songs, albums, and artists in groups with shared similarity could be done with the help of genre labels. In this paper, we present a novel approach for automatic classifying musical genre in Brazilian music using only the song lyrics. This kind of classification remains a challenge in the field of Natural Language Processing. We construct a dataset of 138,368 Brazilian song lyrics distributed in 14 genres. We apply SVM, Random Forest and a Bidirectional Long Short-Term Memory (BLSTM) network combined with different word embeddings techniques to address this classification task. Our experiments show that the BLSTM method outperforms the other models with an F1-score average of $0.48$. Some genres like "gospel", "funk-carioca" and "sertanejo", which obtained 0.89, 0.70 and 0.69 of F1-score, respectively, can be defined as the most distinct and easy to classify in the Brazilian musical genres context. △ Less

Submitted 6 March, 2020; originally announced March 2020.

Comments: 7 pages, 4 figures, 3 tables

MSC Class: 68T50(Primary); 68T05 (Secondary) ACM Class: I.2.7; I.2.6

Highly thermally stable sub-20nm magnetic random-access memory based on perpendicular shape anisotropy

Authors: N. Perrissin, S. Lequeux, N. Strelkov, L. Vila, L. Buda-Prejbeanu, S. Auffret, R. C. Sousa, I. L. Prejbeanu, B. Dieny

Abstract: A new approach to increase the downsize scalability of perpendicular STT-MRAM is presented. It consists in significantly increasing the thickness of the storage layer in out-of-plane magnetized tunnel junctions (pMTJ) as compared to conventional pMTJ in order to induce a perpendicular shape anisotropy (PSA) in this layer. This PSA is obtained by depositing a thick ferromagnetic (FM) layer on top o… ▽ More A new approach to increase the downsize scalability of perpendicular STT-MRAM is presented. It consists in significantly increasing the thickness of the storage layer in out-of-plane magnetized tunnel junctions (pMTJ) as compared to conventional pMTJ in order to induce a perpendicular shape anisotropy (PSA) in this layer. This PSA is obtained by depositing a thick ferromagnetic (FM) layer on top of an MgO/FeCoB based magnetic tunnel junction (MTJ) so that the thickness of the storage layer becomes of the order or larger than the diameter of the MTJ pillar. In contrast to conventional spin transfer torque magnetic random access memory (STT-MRAM) wherein the demagnetizing energy opposes the interfacial perpendicular magnetic anisotropy (iPMA), in these novel memory cells, both PSA and iPMA contributions favor out-of-plane orientation of the storage layer magnetization. Using thicker storage layers in these PSA-STT-MRAM has several advantages. Thanks to the PSA, very high and easily tunable thermal stability factors can be achieved, even down to sub-10 nm diameters. Moreover, low dam** material can be used for the thick FM material thus leading to a reduction of the write current. The paper describes this new PSA-STT-MRAM concept, practical realization of such memory arrays, magnetic characterization demonstrating thermal stability factor above 200 for MTJs as small as 8nm in diameter and possibility to maintain thermal stability factor above 60 down to 4nm diameter. △ Less

Submitted 7 March, 2018; originally announced March 2018.

Modulating spin transfer torque switching dynamics with two orthogonal spin-polarizers by varying the cell aspect ratio

Authors: B. Lacoste, M. Marins de Castro, T. Devolder, R. C. Sousa, L. D. Buda-Prejbeanu, S. Auffret, U. Ebels, C. Ducruet, I. L. Prejbeanu, L. Vila, B. Rodmacq, B. Dieny

Abstract: We study in-plane magnetic tunnel junctions with additional perpendicular polarizer for subnanosecond-current-induced switching memories. The spin-transfer-torque switching dynamics was studied as a function of the cell aspect ratio both experimentally and by numerical simulations using the macrospin model. We show that the anisotropy field plays a significant role in the dynamics, along with the… ▽ More We study in-plane magnetic tunnel junctions with additional perpendicular polarizer for subnanosecond-current-induced switching memories. The spin-transfer-torque switching dynamics was studied as a function of the cell aspect ratio both experimentally and by numerical simulations using the macrospin model. We show that the anisotropy field plays a significant role in the dynamics, along with the relative amplitude of the two spin-torque contributions. This was confirmed by micromagnetic simulations. Real-time measurements of the reversal were performed with samples of low and high aspect ratio. For low aspect ratios, a precessional motion of the magnetization was observed and the effect of temperature on the precession coherence was studied. For high aspect ratios, we observed magnetization reversals in less than 1 ns for high enough current densities, the final state being controlled by the current direction in the magnetic tunnel junction cell. △ Less

Submitted 3 December, 2014; v1 submitted 23 July, 2014; originally announced July 2014.

Comments: 6 pages, 7 figures

Journal ref: Phys. Rev. B 90, 224404 (2014)

Quasi ballistic magnetization reversal

Authors: H. W. Schumacher, C. Chappert, R. C. Sousa, P. P. Freitas, J. Miltat

Abstract: We demonstrate a quasi ballistic switching of the magnetization in a microscopic mag-neto resistive memory cell. By means of time resolved magneto transport we follow the large angle precession of the free layer magnetization of a spin valve cell upon applica-tion of transverse magnetic field pulses. Stop** the field pulse after a 180 degree precession rotation leads to magnetization reversal… ▽ More We demonstrate a quasi ballistic switching of the magnetization in a microscopic mag-neto resistive memory cell. By means of time resolved magneto transport we follow the large angle precession of the free layer magnetization of a spin valve cell upon applica-tion of transverse magnetic field pulses. Stop** the field pulse after a 180 degree precession rotation leads to magnetization reversal with reversal times as short as 165 ps. This switching mode represents the fundamental ultra fast limit of field induced magnetization reversal. △ Less

Submitted 31 July, 2002; originally announced July 2002.

Comments: 16 pages, 4 figures, experimental. submitted to Phys. Rev. Lett

Phase Coherent Precessional Magnetization Reversal in Micro-scopic Spin Valve Elements

Authors: H. W. Schumacher, C. Chappert, P. Crozat, R. C. Sousa, P. P. Freitas, J. Miltat, J. Fassbender, B. Hillebrands

Abstract: We study the precessional switching of the magnetization in microscopic spin valve cells induced by ultra short in-plane hard axis magnetic field pulses. Stable and highly efficient switching is monitored following pulses as short as 140 ps with energies down to 15 pJ. Multiple application of identical pulses reversibly toggles the cell's magnetization be-tween the two easy directions. Variation… ▽ More We study the precessional switching of the magnetization in microscopic spin valve cells induced by ultra short in-plane hard axis magnetic field pulses. Stable and highly efficient switching is monitored following pulses as short as 140 ps with energies down to 15 pJ. Multiple application of identical pulses reversibly toggles the cell's magnetization be-tween the two easy directions. Variations of pulse duration and amplitude reveal alter-nating regimes of switching and non-switching corresponding to transitions from in-phase to out-of-phase excitations of the magnetic precession by the field pulse. In the low field limit dam** becomes predominant and a relaxational reversal is found allowing switching by hard axis fields below the in-plane anisotropy field threshold. △ Less

Submitted 23 July, 2002; originally announced July 2002.

Comments: 17 pages, 4 figures