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Ferromagnetism and conductivity in atomically thin SrRuO3
Authors:
H. Boschker,
T. Harada,
T. Asaba,
R. Ashoori,
A. V. Boris,
H. Hilgenkamp,
C. R. Hughes,
M. E. Holtz,
L. Li,
D. A. Muller,
H. Nair,
P. Reith,
X. Renshaw Wang,
D. G. Schlom,
A. Soukiassian,
J. Mannhart
Abstract:
Atomically thin ferromagnetic and conducting electron systems are highly desired for spintronics, because they can be controlled with both magnetic and electric fields. We present (SrRuO3)1-(SrTiO3)5 superlattices and single-unit-cell-thick SrRuO3 samples that are capped with SrTiO3. We achieve samples of exceptional quality. In these samples, the electron systems comprise only a single RuO2 plane…
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Atomically thin ferromagnetic and conducting electron systems are highly desired for spintronics, because they can be controlled with both magnetic and electric fields. We present (SrRuO3)1-(SrTiO3)5 superlattices and single-unit-cell-thick SrRuO3 samples that are capped with SrTiO3. We achieve samples of exceptional quality. In these samples, the electron systems comprise only a single RuO2 plane. We observe conductivity down to 50 mK, a ferromagnetic state with a Curie temperature of 25 K, and signals of magnetism persisting up to approximately 100 K.
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Submitted 11 February, 2019; v1 submitted 28 September, 2016;
originally announced September 2016.
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Acoustic Localization Phenomena in Ferroelectric Nanophononic Devices
Authors:
A. Bruchhausen,
N. D. Lanzillotti-Kimura,
B. Jusserand,
A. Soukiassian,
D. G. Schlom,
T. Dekorsy,
A. Fainstein
Abstract:
The engineering of phononic resonances in ferroelectric structures appears as a new knob in the design and realization of novel multifunctional devices. In this work we experimentally study phononic resonators based on insulating (BaTiO3, SrTiO3) and metallic (SrRuO3) oxides. We experimentally demonstrate the confinement of acoustic waves in the 100 GHz frequency range in a phonon nanocavity, the…
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The engineering of phononic resonances in ferroelectric structures appears as a new knob in the design and realization of novel multifunctional devices. In this work we experimentally study phononic resonators based on insulating (BaTiO3, SrTiO3) and metallic (SrRuO3) oxides. We experimentally demonstrate the confinement of acoustic waves in the 100 GHz frequency range in a phonon nanocavity, the time and spatial beatings resulting from the coupling of two different hybrid nanocavities forming an acoustic molecule, and the direct measurement of Bloch-like oscillations of acoustic phonons in a system formed by 10 coupled resonators. By means of coherent phonon generation techniques we study the phonon dynamics directly in the time-domain. The metallic SrRuO3 introduces a local phonon generator and transducer that allows for the spatial, spectral and time-domain monitoring of the complex generated waves. Our results introduce ferroelectric cavity systems as a new tool for the study of complex wave localization phenomena at the nanoscale.
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Submitted 30 April, 2016;
originally announced May 2016.
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Structural and transport properties of epitaxial NaxCoO2 thin films
Authors:
A. Venimadhav,
A. Soukiassian,
D. A. Tenne,
Qi Li,
X. X. Xi,
D. G. Schlom,
R. Arroyave,
Z. K. Liu,
H. P. Sun,
Xiaoqing Pan,
Minhyea Lee,
N. P. Ong
Abstract:
We have studied structural and transport properties of epitaxial NaxCoO2 thin films on (0001) sapphire substrate prepared by topotaxially converting an epitaxial Co3O4 film to NaxCoO2 with annealing in Na vapor. The films are c axis oriented and in-plane aligned with [10 1 0] NaxCoO2 rotated by 30 degrees from [10 1 0] sapphire. Different Na vapor pressures during the annealing resulted in films…
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We have studied structural and transport properties of epitaxial NaxCoO2 thin films on (0001) sapphire substrate prepared by topotaxially converting an epitaxial Co3O4 film to NaxCoO2 with annealing in Na vapor. The films are c axis oriented and in-plane aligned with [10 1 0] NaxCoO2 rotated by 30 degrees from [10 1 0] sapphire. Different Na vapor pressures during the annealing resulted in films with different Na concentrations, which showed distinct transport properties.
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Submitted 10 May, 2005;
originally announced May 2005.
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Properties of MgB2 thin films with carbon do**
Authors:
A. V. Pogrebnyakov,
X. X. Xi,
J. M. Redwing,
V. Vaithyanathan,
D. G. Schlom,
A. Soukiassian,
S. B. Mi,
C. L. Jia,
C. B. Eom,
J. Chen,
Y. F. Hu,
Y. Cui,
Q. Li
Abstract:
We have studied structural and superconducting properties of MgB2 thin films doped with carbon during the hybrid physical-chemical vapor deposition process. A carbon-containing metalorganic precursor bis(cyclopentadienyl)magnesium was added to the carrier gas to achieve carbon do**. As the amount of carbon in the films increases, the resistivity increases, Tc decreases, and the upper critical…
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We have studied structural and superconducting properties of MgB2 thin films doped with carbon during the hybrid physical-chemical vapor deposition process. A carbon-containing metalorganic precursor bis(cyclopentadienyl)magnesium was added to the carrier gas to achieve carbon do**. As the amount of carbon in the films increases, the resistivity increases, Tc decreases, and the upper critical field increases dramatically as compared to the clean films. The self-field Jc in the carbon-doped films is lower than that in the clean films, but Jc remains relatively high to much higher magnetic fields, indicating stronger pinning. Structurally, the doped films are textured with nano-grains and highly resistive amorphous areas at the grain boundaries. The carbon do** approach can be used to produce MgB2 materials for high magnetic field applications.
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Submitted 6 July, 2004;
originally announced July 2004.
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Hole Do** Dependence of the Coherence Length in $La_{2-x}Sr_xCuO_4$ Thin Films
Authors:
H. H. Wen,
H. P. Yang,
S. L. Li,
X. H. Zeng,
A. A. Soukiassian,
W. D. Si,
X. X. Xi
Abstract:
By measuring the field and temperature dependence of magnetization on systematically doped $La_{2-x}Sr_xCuO_4$ thin films, the critical current density $j_c(0)$ and the collective pinning energy $U_p(0)$ are determined in single vortex creep regime. Together with the published data of superfluid density, condensation energy and anisotropy, for the first time we derive the do** dependence of th…
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By measuring the field and temperature dependence of magnetization on systematically doped $La_{2-x}Sr_xCuO_4$ thin films, the critical current density $j_c(0)$ and the collective pinning energy $U_p(0)$ are determined in single vortex creep regime. Together with the published data of superfluid density, condensation energy and anisotropy, for the first time we derive the do** dependence of the coherence length or vortex core size in wide do** regime directly from the low temperature data. It is found that the coherence length drops in the underdoped region and increases in the overdoped side with the increase of hole concentration. The result in underdoped region clearly deviates from what expected by the pre-formed pairing model if one simply associates the pseudogap with the upper-critical field.
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Submitted 13 May, 2003; v1 submitted 12 May, 2003;
originally announced May 2003.
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The superconducting gap of \QTR{em}{in situ} $MgB_{2}$ thin films by microwave surface impedance measurements
Authors:
N. Hakim,
C. Kusko,
S. Sridhar,
A. Soukiassian,
X. H. Zeng,
X. X. Xi,
.
Abstract:
Precision measurements of the microwave surface resistance $R_{s}$ of in situ $MgB_{2}$ films directly reveal an exponential behavior of $R_{s}$ at low temperature indicating a fully-gapped order parameter. The entire temperature dependence of $R_{s}$ is well described by a Mattis-Bardeen formalism but with a small gap ratio of $Δ(0)/kT_{c}=0.72$, corresponding to $Δ(0)=1.9meV$.
Precision measurements of the microwave surface resistance $R_{s}$ of in situ $MgB_{2}$ films directly reveal an exponential behavior of $R_{s}$ at low temperature indicating a fully-gapped order parameter. The entire temperature dependence of $R_{s}$ is well described by a Mattis-Bardeen formalism but with a small gap ratio of $Δ(0)/kT_{c}=0.72$, corresponding to $Δ(0)=1.9meV$.
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Submitted 30 November, 2002;
originally announced December 2002.
