Showing 1–1 of 1 results for author: Soukhorukov, A V
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Study of the spin-pump-induced inverse spin-Hall effect in Bi doped n-type Si
Authors:
A. A. Ezhevskii,
D. V. Guseinov,
A. V. Soukhorukov,
A. V. Novikov,
D. V. Yurasov,
N. S. Gusev
Abstract:
An inverse spin Hall effect (ISHE) in n-type silicon was observed experimentally when conduction electrons were scattered on the spin-orbit potential of bismuth. The spin current in the silicon layer was generated by excitation of the magnetization precession during ferromagnetic resonance in a thin permalloy (Py) layer deposited on a Si layer doped by phosphor and bismuth. From the angular depend…
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An inverse spin Hall effect (ISHE) in n-type silicon was observed experimentally when conduction electrons were scattered on the spin-orbit potential of bismuth. The spin current in the silicon layer was generated by excitation of the magnetization precession during ferromagnetic resonance in a thin permalloy (Py) layer deposited on a Si layer doped by phosphor and bismuth. From the angular dependences of the dc voltage for different Py/n-Si:Bi structures aligned along the [011] or [100] crystal axes, we were able to distinguish the planar Hall effect (PHE) and ISHE contributions. The ISHE dc voltage signal was proportional to sinθ*sin2θ product for the structure aligned to the [011] crystal axis and to sinθ*cos2θ for the [100] direction. In addition, the PHE dc voltage was observed for the angles corresponded to the sin2θ dependence. It means that for silicon as a many-valley semiconductor, the scattering of spins due to the spin-orbit potential induced by shallow donor in n-type material is dependent on the orientation of the valley axes relative to the direction of the magnetic field.
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Submitted 20 February, 2020;
originally announced February 2020.
