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Probing the Dark Exciton in Monolayer MoS$_2$ by Quantum Interference in Second Harmonic Generation Spectroscopy
Authors:
Chenjiang Qian,
Viviana Villafañe,
Pedro Soubelet,
Peirui Ji,
Andreas V. Stier,
Jonathan J. Finley
Abstract:
We report resonant second harmonic generation (SHG) spectroscopy of an hBN-encapsulated monolayer of MoS$_2$. By tuning the energy of the excitation laser, we identify a dark state transition (D) that is blue detuned by +25 meV from the neutral exciton X$^0$. We observe a splitting of the SHG spectrum into two distinct peaks and a clear anticrossing between them as the SHG resonance is tuned throu…
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We report resonant second harmonic generation (SHG) spectroscopy of an hBN-encapsulated monolayer of MoS$_2$. By tuning the energy of the excitation laser, we identify a dark state transition (D) that is blue detuned by +25 meV from the neutral exciton X$^0$. We observe a splitting of the SHG spectrum into two distinct peaks and a clear anticrossing between them as the SHG resonance is tuned through the energy of the dark exciton D. This observation is indicative of quantum interference arising from the strong two-photon light-matter interaction. We further probe the incoherent relaxation from the dark state to the bright excitons, including X$^0$ and localized excitons LX, by the resonant enhancement of their intensities at the SHG-D resonance. The relaxation of D to bright excitons is strongly suppressed on the bare substrate whilst enabled when the hBN/MoS$_2$/hBN heterostructure is integrated in a nanobeam cavity. The relaxation enabled by the cavity is explained by the phonon scattering enhanced by the cavity phononic effects. Our work reveals the two-photon quantum interference with long-lived dark states and enables the control through nanostructuring of the substrate. These results indicate the great potential of dark excitons in 2D-material based nonlinear quantum devices.
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Submitted 5 September, 2023;
originally announced September 2023.
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Strain control of exciton and trion spin-valley dynamics in monolayer transition metal dichalcogenides
Authors:
Zhao An,
Pedro Soubelet,
Yaroslav Zhumagulov,
Michael Zopf,
Alex Delhomme,
Chenjiang Qian,
Paulo E. Faria Junior,
Jaroslav Fabian,
Xin Cao,
**gzhong Yang,
Andreas V. Stier,
Fei Ding,
Jonathan J. Finley
Abstract:
The electron-hole exchange interaction is a fundamental mechanism that drives valley depolarization via intervalley exciton hop** in semiconductor multi-valley systems. Here, we report polarization-resolved photoluminescence spectroscopy of neutral excitons and negatively charged trions in monolayer MoSe$_2$ and WSe$_2$ under biaxial strain. We observe a marked enhancement(reduction) on the WSe…
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The electron-hole exchange interaction is a fundamental mechanism that drives valley depolarization via intervalley exciton hop** in semiconductor multi-valley systems. Here, we report polarization-resolved photoluminescence spectroscopy of neutral excitons and negatively charged trions in monolayer MoSe$_2$ and WSe$_2$ under biaxial strain. We observe a marked enhancement(reduction) on the WSe$_2$ triplet trion valley polarization with compressive(tensile) strain while the trion in MoSe$_2$ is unaffected. The origin of this effect is shown to be a strain dependent tuning of the electron-hole exchange interaction. A combined analysis of the strain dependent polarization degree using ab initio calculations and rate equations shows that strain affects intervalley scattering beyond what is expected from strain dependent bandgap modulations. The results evidence how strain can be used to tune valley physics in energetically degenerate multi-valley systems.
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Submitted 27 March, 2023;
originally announced March 2023.
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Lasing of Moiré Trapped MoSe$_2$/WSe$_2$ Interlayer Excitons Coupled to a Nanocavity
Authors:
Chenjiang Qian,
Mirco Troue,
Johannes Figueiredo,
Pedro Soubelet,
Viviana Villafañe,
Johannes Beierlein,
Sebastian Klembt,
Andreas V. Stier,
Sven Höfling,
Alexander W. Holleitner,
Jonathan J. Finley
Abstract:
Moiré trapped interlayer excitons (IXs) in heterobilayer transition metal dichalcogenides currently attract strong interest due to their potential for non-classical light generation, coherent spin-photon interfaces and exploring novel correlated phases of electrons. Here, we report lasing of moiré trapped IXs by integrating a pristine hBN-encapsulated MoSe$_2$/WSe$_2$ heterobilayer in a high-Q (…
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Moiré trapped interlayer excitons (IXs) in heterobilayer transition metal dichalcogenides currently attract strong interest due to their potential for non-classical light generation, coherent spin-photon interfaces and exploring novel correlated phases of electrons. Here, we report lasing of moiré trapped IXs by integrating a pristine hBN-encapsulated MoSe$_2$/WSe$_2$ heterobilayer in a high-Q ($>10^4$) nanophotonic cavity. We control the detuning between the IX line and the cavity mode with a magnetic field and measure the dipolar coupling strength to the cavity mode to be $78 \pm 4\ \mathrm{μeV}$, fully consistent with the $82\ \mathrm{μeV}$ predicted by theory. The emission from the cavity mode shows clear threshold-like behaviour. We observe a superlinear power dependence accompanied by a narrowing of the linewidth as the distinct features of lasing. The onset and prominence of these threshold-like behaviours are significant at resonance whilst weak off-resonance. Our results show that a lasing transition can be induced in interacting moiré trapped IXs with macroscopic coherence extending over the lengthscale of the cavity mode. Such systems raise interesting perspectives for low-power switching and synaptic nanophotonic devices using 2D materials.
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Submitted 9 August, 2023; v1 submitted 14 February, 2023;
originally announced February 2023.
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Emitter-Optomechanical Interaction in Ultra-High-Q hBN Nanocavities
Authors:
Chenjiang Qian,
Viviana Villafañe,
Martin Schalk,
Georgy V. Astakhov,
Ulrich Kentsch,
Manfred Helm,
Pedro Soubelet,
Andreas V. Stier,
Jonathan J. Finley
Abstract:
Integrating quantum emitters into nanocavities which simultaneously couple to the photonic and mechanical modes is critical for interfacing electron spins, photons and phonons in the cavity QED system. Here, we investigate the interaction between the charged boron vacancy $V_B^-$, ultra-high-Q ($\sim10^5$) cavity photonic modes and local phonon modes. A pronounced asymmetry is observed in the emis…
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Integrating quantum emitters into nanocavities which simultaneously couple to the photonic and mechanical modes is critical for interfacing electron spins, photons and phonons in the cavity QED system. Here, we investigate the interaction between the charged boron vacancy $V_B^-$, ultra-high-Q ($\sim10^5$) cavity photonic modes and local phonon modes. A pronounced asymmetry is observed in the emission spectrum for cavities with Q-factor above a threshold of 10$^4$. Similar asymmetries are not observed for cavities without $V_B^-$ centers. To explain our findings, we model the system with phonon-induced light-matter coupling based on $V_B^-$ centers, and compare to the Jaynes-Cummings model for usual emitters. Our results reveal that the multipartite interplay arises during the light-matter coupling of $V_B^-$ centers, illustrating that it is phonon-induced, rather than being caused by thermal population of phonon modes. Such emitter-optomechanical interaction between different photon ($V_B^-$ emission, cavity photonic) and phonon ($V_B^-$ phonon, cavity mechanical) modes provides a novel system to interface spin defects, photons and phonons in condensed matters.
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Submitted 31 January, 2023; v1 submitted 30 September, 2022;
originally announced October 2022.
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Moiré straintronics: a universal platform for reconfigurable quantum materials
Authors:
M. Kögl,
P. Soubelet,
M. Brotons-Gisbert,
A. V. Stier,
B. D. Gerardot,
J. J. Finley
Abstract:
Large scale two-dimensional (2D) moiré superlattices are driving a revolution in designer quantum materials. The electronic interactions in these superlattices, strongly dependent on the periodicity and symmetry of the moiré pattern, critically determine the emergent properties and phase diagrams. To date, the relative twist angle between two layers has been the primary tuning parameter for a give…
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Large scale two-dimensional (2D) moiré superlattices are driving a revolution in designer quantum materials. The electronic interactions in these superlattices, strongly dependent on the periodicity and symmetry of the moiré pattern, critically determine the emergent properties and phase diagrams. To date, the relative twist angle between two layers has been the primary tuning parameter for a given choice of constituent crystals. Here, we establish strain as a powerful mechanism to in-situ modify the moiré periodicity and symmetry. We develop an analytically exact mathematical description for the moiré lattice under arbitrary in-plane heterostrain acting on any bilayer structure. We demonstrate the ability to fine-tune the moiré lattice near critical points, such as the magic angle in bilayer graphene, or fully reconfigure the moiré lattice symmetry beyond that imposed by the unstrained constituent crystals. Due to this unprecedented simultaneous control over the strength of electronic interactions and lattice symmetry, 2D heterostrain provides a powerful platform to engineer, tune, and probe strongly correlated moiré materials.
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Submitted 25 July, 2022;
originally announced July 2022.
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Coupling of MoS$_2$ Excitons with Lattice Phonons and Cavity Vibrational Phonons in Hybrid Nanobeam Cavities
Authors:
Chenjiang Qian,
Viviana Villafañe,
Marko M. Petrić,
Pedro Soubelet,
Andreas V. Stier,
Jonathan J. Finley
Abstract:
We report resonant Raman spectroscopy of neutral excitons X$^0$ and intravalley trions X$^-$ in hBN-encapsulated MoS$_2$ monolayer embedded in a nanobeam cavity. By temperature tuning the detuning between Raman modes of MoS$_2$ lattice phonons and X$^0$/X$^-$ emission peaks, we probe the mutual coupling of excitons, lattice phonons and cavity vibrational phonons. We observe an enhancement of X…
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We report resonant Raman spectroscopy of neutral excitons X$^0$ and intravalley trions X$^-$ in hBN-encapsulated MoS$_2$ monolayer embedded in a nanobeam cavity. By temperature tuning the detuning between Raman modes of MoS$_2$ lattice phonons and X$^0$/X$^-$ emission peaks, we probe the mutual coupling of excitons, lattice phonons and cavity vibrational phonons. We observe an enhancement of X$^0$-induced Raman scattering and a suppression for X$^-$-induced, and explain our findings as arising from the tripartite exciton-phonon-phonon coupling. The cavity vibrational phonons provide intermediate replica states of X$^0$ for resonance conditions in the scattering of lattice phonons, thus enhancing the Raman intensity. In contrast, the tripartite coupling involving X$^-$ is found to be much weaker, an observation explained by the geometry-dependent polarity of the electron and hole deformation potentials. Our results indicate that phononic hybridization between lattice and nanomechanical modes plays a key role in the excitonic photophysics and light-matter interaction in 2D-material nanophotonic systems.
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Submitted 23 March, 2023; v1 submitted 8 April, 2022;
originally announced April 2022.
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Unveiling the Zero-Phonon Line of the Boron Vacancy Center by Cavity Enhanced Emission
Authors:
Chenjiang Qian,
Viviana Villafañe,
Martin Schalk,
G. V. Astakhov,
Ulrich Kentsch,
Manfred Helm,
Pedro Soubelet,
Nathan P. Wilson,
Roberto Rizzato,
Stephan Mohr,
Alexander W. Holleitner,
Dominik B. Bucher,
Andreas V. Stier,
JonathanJ. Finley
Abstract:
Negatively charged boron vacancies ($V_B^-$) in hexagonal boron nitride (hBN) exhibit a broad emission spectrum due to strong electron-phonon coupling and Jahn-Teller mixing of electronic states. As such, the direct measurement of zero-phonon line (ZPL) of $V_B^-$ has remained elusive. Here, we measure the room-temperature ZPL wavelength to be $773\pm2$ nm by coupling the hBN layer to the high-Q n…
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Negatively charged boron vacancies ($V_B^-$) in hexagonal boron nitride (hBN) exhibit a broad emission spectrum due to strong electron-phonon coupling and Jahn-Teller mixing of electronic states. As such, the direct measurement of zero-phonon line (ZPL) of $V_B^-$ has remained elusive. Here, we measure the room-temperature ZPL wavelength to be $773\pm2$ nm by coupling the hBN layer to the high-Q nanobeam cavity. As the wavelength of cavity mode is tuned, we observe a pronounced intensity resonance, indicating the coupling to $V_B^-$. Our observations are consistent with the spatial redistribution of $V_B^-$ emission. Spatially resolved measurements show a clear Purcell effect maximum at the midpoint of the nanobeam, in accord with the optical field distribution of the cavity mode. Our results are in good agreement with theoretical calculations, opening the way to using $V_B^-$ as cavity spin-photon interfaces.
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Submitted 22 June, 2022; v1 submitted 22 February, 2022;
originally announced February 2022.
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Nonlocal Exciton-Photon Interactions in Hybrid High-Q Beam Nanocavities with Encapsulated MoS$_2$ Monolayers
Authors:
Chenjiang Qian,
Viviana Villafañe,
Pedro Soubelet,
Alexander Hötger,
Takashi Taniguchi,
Kenji Watanabe,
Nathan P. Wilson,
Andreas V. Stier,
Alexander W. Holleitner,
Jonathan J. Finley
Abstract:
Atomically thin semiconductors can be readily integrated into a wide range of nanophotonic architectures for applications in quantum photonics and novel optoelectronic devices. We report the observation of nonlocal interactions of \textit{free} trions in pristine hBN/MoS$_2$/hBN heterostructures coupled to single mode (Q $>10^4$) quasi 0D nanocavities. The high excitonic and photonic quality of th…
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Atomically thin semiconductors can be readily integrated into a wide range of nanophotonic architectures for applications in quantum photonics and novel optoelectronic devices. We report the observation of nonlocal interactions of \textit{free} trions in pristine hBN/MoS$_2$/hBN heterostructures coupled to single mode (Q $>10^4$) quasi 0D nanocavities. The high excitonic and photonic quality of the interaction system stems from our integrated nanofabrication approach simultaneously with the hBN encapsulation and the maximized local cavity field amplitude within the MoS$_2$ monolayer. We observe a nonmonotonic temperature dependence of the cavity-trion interaction strength, consistent with the nonlocal light-matter interactions in which the extent of the center-of-mass wavefunction is comparable to the cavity mode volume in space. Our approach can be generalized to other optically active 2D materials, opening the way towards harnessing novel light-matter interaction regimes for applications in quantum photonics.
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Submitted 25 December, 2022; v1 submitted 9 July, 2021;
originally announced July 2021.
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Electrical control of orbital and vibrational interlayer coupling in bi- and trilayer 2H-MoS$_2$
Authors:
Julian Klein,
Jakob Wierzbowski,
Pedro Soubelet,
Thomas Brumme,
Lorenzo Maschio,
Agnieszka Kuc,
Kai Müller,
Andreas V. Stier,
Jonathan J. Finley
Abstract:
Manipulating electronic interlayer coupling in layered van der Waals (vdW) materials is essential for designing opto-electronic devices. Here, we control vibrational and electronic interlayer coupling in bi- and trilayer 2H-MoS$_2$ using large external electric fields in a micro-capacitor device. The electric field lifts Raman selection rules and activates phonon modes in excellent agreement with…
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Manipulating electronic interlayer coupling in layered van der Waals (vdW) materials is essential for designing opto-electronic devices. Here, we control vibrational and electronic interlayer coupling in bi- and trilayer 2H-MoS$_2$ using large external electric fields in a micro-capacitor device. The electric field lifts Raman selection rules and activates phonon modes in excellent agreement with ab-initio calculations. Through polarization resolved photoluminescence spectroscopy in the same device, we observe a strongly tunable valley dichroism with maximum circular polarization degree of $\sim 60\%$ in bilayer and $\sim 35\%$ in trilayer MoS$_2$ that are fully consistent with a rate equation model which includes input from electronic band structure calculations. We identify the highly delocalized electron wave function between the layers close to the high symmetry $Q$ points as the origin of the tunable circular dichroism. Our results demonstrate the possibility of electric field tunable interlayer coupling for controlling emergent spin-valley physics and hybridization driven effects in vdW materials and their heterostructures.
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Submitted 22 June, 2021;
originally announced June 2021.
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Efficient optomechanical mode-shape map** of micromechanical devices
Authors:
David Hoch,
Kevin-Jeremy Haas,
Leopold Moller,
Timo Sommer,
Pedro Soubelet,
Jonathan Finley,
Menno Poot
Abstract:
We demonstrate a method to optically map multiple modes of mechanical structures simultaneously. The fast and robust method, based on a modified phase-lock-loop, is demonstrated on a silicon nitride membrane and compared with three different approaches. Line traces and two-dimensional maps of different modes are acquired. The high quality enables us to determine the weights of individual contribut…
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We demonstrate a method to optically map multiple modes of mechanical structures simultaneously. The fast and robust method, based on a modified phase-lock-loop, is demonstrated on a silicon nitride membrane and compared with three different approaches. Line traces and two-dimensional maps of different modes are acquired. The high quality enables us to determine the weights of individual contributions in superpositions of degenerate modes.
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Submitted 6 May, 2021;
originally announced May 2021.
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Charged exciton kinetics in monolayer MoSe$_2$ near ferroelectric domain walls in periodically poled LiNbO$_3$
Authors:
Pedro Soubelet,
Julian Klein,
Jakob Wierzbowski,
Riccardo Silvioli,
Florian Sigger,
Andreas V. Stier,
Katia Gallo,
Jonathan J. Finley
Abstract:
Monolayers of semiconducting transition metal dichalcogenides are a strongly emergent platform for exploring quantum phenomena in condensed matter, building novel opto-electronic devices with enhanced functionalities. Due to their atomic thickness, their excitonic optical response is highly sensitive to their dielectric environment. In this work, we explore the optical properties of monolayer thic…
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Monolayers of semiconducting transition metal dichalcogenides are a strongly emergent platform for exploring quantum phenomena in condensed matter, building novel opto-electronic devices with enhanced functionalities. Due to their atomic thickness, their excitonic optical response is highly sensitive to their dielectric environment. In this work, we explore the optical properties of monolayer thick MoSe$_2$ straddling domain wall boundaries in periodically poled LiNbO$_3$. Spatially-resolved photoluminescence experiments reveal spatial sorting of charge and photo-generated neutral and charged excitons across the boundary. Our results reveal evidence for extremely large in-plane electric fields of 3000\,kV/cm at the domain wall whose effect is manifested in exciton dissociation and routing of free charges and trions toward oppositely poled domains and a non-intuitive spatial intensity dependence. By modeling our result using drift-diffusion and continuity equations, we obtain excellent qualitative agreement with our observations and have explained the observed spatial luminescence modulation using realistic material parameters.
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Submitted 3 October, 2020;
originally announced October 2020.
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Dimensional crossover of acoustic phonon lifetime in $2H$-MoSe$_2$
Authors:
P. Soubelet,
A. A. Reynoso,
A. Fainstein,
K. Nogajewski,
M. Potemski,
C. Faugeras,
A. E. Bruchhausen
Abstract:
A time-resolved observation of coherent interlayer longitudinal acoustic phonons in 2$H$-MoSe$_2$ is reported. A femtosecond pump-probe technique is used to investigate the evolution of the energy loss of these vibrational modes in a wide selection of MoSe$_2$ flakes with different thicknesses ranging from bilayer up to the bulk limit. By directly analysing the temporal decay of the modes, we can…
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A time-resolved observation of coherent interlayer longitudinal acoustic phonons in 2$H$-MoSe$_2$ is reported. A femtosecond pump-probe technique is used to investigate the evolution of the energy loss of these vibrational modes in a wide selection of MoSe$_2$ flakes with different thicknesses ranging from bilayer up to the bulk limit. By directly analysing the temporal decay of the modes, we can clearly distinguish an abrupt crossover related to the acoustic mean free path of the phonons in a layered system, and the constraints imposed to the acoustic decay channels when reducing the dimensionality. Loses intrinsic to the low dimensionality of single or few layer materials impose critical limitations for their use in optomechanical and optoelectronic devices.
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Submitted 11 October, 2018; v1 submitted 10 October, 2018;
originally announced October 2018.
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Optoelectronic forces with quantum wells for cavity optomechanics in GaAs/AlAs semiconductor microcavities
Authors:
V. Villafañe,
P. Sesin,
P. Soubelet,
S. Anguiano,
A. E. Bruchhausen,
G. Rozas,
C. Gomez Carbonell,
A. Lemaître,
A. Fainstein
Abstract:
Radiation pressure, electrostriction, and photothermal forces have been investigated to evidence backaction, non-linearities and quantum phenomena in cavity optomechanics. We show here through a detailed study of the relative intensity of the cavity mechanical modes observed when exciting with pulsed lasers close to the GaAs optical gap that optoelectronic forces involving real carrier excitation…
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Radiation pressure, electrostriction, and photothermal forces have been investigated to evidence backaction, non-linearities and quantum phenomena in cavity optomechanics. We show here through a detailed study of the relative intensity of the cavity mechanical modes observed when exciting with pulsed lasers close to the GaAs optical gap that optoelectronic forces involving real carrier excitation and deformation potential interaction are the strongest mechanism of light-to-sound transduction in semiconductor GaAs/AlAs distributed Bragg reflector optomechanical resonators. We demonstrate that the ultrafast spatial redistribution of the photoexcited carriers in microcavities with massive GaAs spacers leads to an enhanced coupling to the fundamental 20 GHz vertically polarized mechanical breathing mode. The carrier diffusion along the growth axis of the device can be enhanced by increasing the laser power, or limited by embedding GaAs quantum wells in the cavity spacer, a strategy used here to prove and engineer the optoelectronic forces in phonon generation with real carriers. The wavelength dependence of the observed phenomena provide further proof of the role of optoelectronic forces. The optical forces associated to the different intervening mechanisms and their relevance for dynamical backaction in optomechanics are evaluated using finite-element methods. The results presented open the path to the study of hitherto seldom investigated dynamical backaction in optomechanical solid-state resonators in the presence of optoelectronic forces.
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Submitted 23 March, 2018; v1 submitted 26 September, 2017;
originally announced September 2017.
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Solutions of the Schroedinger equation for piecewise harmonic potentials: remarks on the asymptotic behavior of the wave functions
Authors:
F. D. Mazzitelli,
M. D. Mazzitelli,
P. I. Soubelet
Abstract:
We discuss the solutions of the Schroedinger equation for piecewise potentials, given by the harmonic oscillator potential for $\vert x\vert >a$ and an arbitrary function for $\vert x\vert <a$, using elementary methods. The study of this problem sheds light on usual errors when discussing the asymptotic behavior of the eigenfunctions of the quantum harmonic oscillator and can also be used for the…
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We discuss the solutions of the Schroedinger equation for piecewise potentials, given by the harmonic oscillator potential for $\vert x\vert >a$ and an arbitrary function for $\vert x\vert <a$, using elementary methods. The study of this problem sheds light on usual errors when discussing the asymptotic behavior of the eigenfunctions of the quantum harmonic oscillator and can also be used for the analysis of the eigenfunctions of the hydrogen atom. We present explicit results for the energy levels of a potential of this class, used to model the confinement of electrons in nanostructures.
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Submitted 29 May, 2017;
originally announced May 2017.
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Resonance effects in the Raman scattering of mono- and few layers MoSe$_2$
Authors:
P. Soubelet,
A. E. Bruchhausen,
A. Fainstein,
K. Nogajewski,
C. Faugeras
Abstract:
Using resonant Raman scattering spectroscopy with 25 different laser lines, we describe the Raman scattering spectra of mono- and multi-layers 2H-molybdenum diselenide (MoSe$_2$) as well as the different resonances affecting the most pronounced features. For high-energy phonons, both A- and E- symmetry type phonons present resonances with A and B excitons of MoSe$_2$ together with a marked increas…
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Using resonant Raman scattering spectroscopy with 25 different laser lines, we describe the Raman scattering spectra of mono- and multi-layers 2H-molybdenum diselenide (MoSe$_2$) as well as the different resonances affecting the most pronounced features. For high-energy phonons, both A- and E- symmetry type phonons present resonances with A and B excitons of MoSe$_2$ together with a marked increase of intensity when exciting at higher energy, close to the C exciton energy. We observe symmetry dependent exciton-phonon coupling affecting mainly the low-energy rigid layer phonon modes. The shear mode for multilayer displays a pronounced resonance with the C exciton while the breathing mode has an intensity that grows with the excitation laser energy, indicating a resonance with electronic excitations at energies higher than that of the C exciton.
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Submitted 16 March, 2016;
originally announced March 2016.