Magnetic behavior of the metal organic framework solid: [(CH3)2NH2][Co(HCOO)3]
Authors:
K. Vinod,
C. S. Deepak,
Shilpam Sharma,
D. Sornadurai,
C. S. Sundar,
A. Bharathi
Abstract:
In this study we examine the phase transitions in single crystals of [(CH3)2NH2]Co(HCOO)3], using magnetization and specific heat measurements as a function of temperature and magnetic field. Magnetisation measurements indicate a transition at 15 K that is associated with an antiferromagnetic transition. The results of the isothermal magnetization versus magnetic field curves demonstrate the prese…
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In this study we examine the phase transitions in single crystals of [(CH3)2NH2]Co(HCOO)3], using magnetization and specific heat measurements as a function of temperature and magnetic field. Magnetisation measurements indicate a transition at 15 K that is associated with an antiferromagnetic transition. The results of the isothermal magnetization versus magnetic field curves demonstrate the presence of a single-ion magnet phase, coexisting with antiferromagnetism. A peak in specific heat is seen at 15 K, corresponding to the magnetic transition. The enthalpy of the transition evaluated from the area under the specific heat peak decreases with the application of magnetic field of upto8 T. This is suggestive of long range antiferromagnetic magnetic order, giving way to single-ion magnetic behavior under external field. In experiments at high temperatures, corresponding to the well-known structural transition in this system, the specific heat measurements, shows a peak at ~155K, that is insensitive to applied magnetic field. The magnetisation in this temperature range, while it exhibits a paramagnetic behavior, shows a distinct jump that has been attributed to a spin-state transition of Co2+ associated with the structural transition.
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Submitted 26 January, 2015;
originally announced January 2015.
Role of Se vacancies on Shubnikov de Haas oscillations in Bi2Se3: a combined magneto-resistance and positron annihilation study
Authors:
T. R. Devidas,
E. P. Amaladass,
Shilpam Sharma,
R. Rajaraman,
D. Sornadurai,
N. Subramanian,
Awadhesh Mani,
C. S. Sundar,
A. Bharathi
Abstract:
Magneto resistance measurements coupled with positron lifetime measurements, to characterize the vacancy type defects, have been carried out on the topological insulator (TI) system Bi2Se3, of varying Se/Bi ratio. Pronounced Shubnikov de Haas (SdH) oscillations are seen in nominal Bi2Se3.1 crystals for measurements performed in magnetic fields up to 15 T in the 4 K to 10 K temperature range, with…
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Magneto resistance measurements coupled with positron lifetime measurements, to characterize the vacancy type defects, have been carried out on the topological insulator (TI) system Bi2Se3, of varying Se/Bi ratio. Pronounced Shubnikov de Haas (SdH) oscillations are seen in nominal Bi2Se3.1 crystals for measurements performed in magnetic fields up to 15 T in the 4 K to 10 K temperature range, with field applied perpendicular to the (001) plane of the crystal. The quantum oscillations, characteristic of 2D electronic structure, are seen only in the crystals that have a lower concentration of Se vacancies, as inferred from positron annihilation spectroscopy.
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Submitted 8 December, 2014;
originally announced December 2014.