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Characterisation and simulation of stitched CMOS strip sensors
Authors:
Naomi Davis,
Jan-Hendrik Arling,
Marta Baselga,
Leena Diehl,
Jochen Dingfelder,
Ingrid-Maria Gregor,
Marc Hauser,
Fabian Hügging,
Tomasz Hemperek,
Karl Jakobs,
Michael Karagounis,
Roland Koppenhöfer,
Kevin Kröninger,
Fabian Lex,
Ulrich Parzefall,
Arturo Rodriguez,
Birkan Sari,
Niels Sorgenfrei,
Simon Spannagel,
Dennis Sperlich,
Tianyang Wang,
Jens Weingarten,
Iveta Zatocilova
Abstract:
In high-energy physics, there is a need to investigate alternative silicon sensor concepts that offer cost-efficient, large-area coverage. Sensors based on CMOS imaging technology present such a silicon sensor concept for tracking detectors. The CMOS Strips project investigates passive CMOS strip sensors fabricated by LFoundry in a 150nm technology. By employing the technique of stitching, two dif…
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In high-energy physics, there is a need to investigate alternative silicon sensor concepts that offer cost-efficient, large-area coverage. Sensors based on CMOS imaging technology present such a silicon sensor concept for tracking detectors. The CMOS Strips project investigates passive CMOS strip sensors fabricated by LFoundry in a 150nm technology. By employing the technique of stitching, two different strip sensor formats have been realised. The sensor performance is characterised based on measurements at the DESY II Test Beam Facility. The sensor response was simulated utilising Monte Carlo methods and electric fields provided by TCAD device simulations. This study shows that employing the stitching technique does not affect the hit detection efficiency. A first look at the electric field within the sensor and its impact on generated charge carriers is being discussed.
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Submitted 14 May, 2024;
originally announced May 2024.
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Characterization, Simulation and Test Beam Data Analysis of Stitched Passive CMOS Strip Sensors
Authors:
I. Zatocilova,
J. -H. Arling,
M. Baselga,
N. Davis,
L. Diehl,
J. Dingfelder,
I. -M. Gregor,
M. Hauser,
T. Hemperek,
F. Hügging,
K. Jakobs,
M. Karagounis,
K. Kröninger,
F. Lex,
U. Parzefall,
A. Rodriguez,
B. Sari,
N. Sorgenfrei,
S. Spannagel,
D. Sperlich,
T. Wang,
J. Weingarten
Abstract:
In the passive CMOS Strips Project, strip sensors were designed at the University of Bonn and produced by LFoundry in 150 nm technology, with an additional backside processing from IZM Berlin. Up to five individual reticules were connected by stitching at the foundry in order to obtain the typical strip lengths required for the LHC Phase-II upgrade of ATLAS or CMS trackers. After dicing, sensors w…
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In the passive CMOS Strips Project, strip sensors were designed at the University of Bonn and produced by LFoundry in 150 nm technology, with an additional backside processing from IZM Berlin. Up to five individual reticules were connected by stitching at the foundry in order to obtain the typical strip lengths required for the LHC Phase-II upgrade of ATLAS or CMS trackers. After dicing, sensors were tested in a probe station and characterised with a Sr90-source as well as laser-based edge- and top-TCT systems. Sensors were also simulated using Sentaurus TCAD. At last, detector modules were constructed from several sensors and thoroughly studied in two beam campaigns at DESY. All of these measurements were performed before and after irradiation. This contribution provides an overview of simulation results, summarises the laboratory measurements and in particular presents first test beam results for irradiated and unirradiated passive CMOS strip sensors. We are demonstrating that large area sensors with sufficient radiation hardness can be obtained by stitching during the CMOS process, and presenting our plans for the next submission in the framework of this project.
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Submitted 15 November, 2023; v1 submitted 28 September, 2023;
originally announced September 2023.
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Understanding the Frequency Dependence of Capacitance Measurements of Irradiated Silicon Detectors
Authors:
Sven Mägdefessel,
Riccardo Mori,
Niels Sorgenfrei,
Ulrich Parzefall
Abstract:
Capacitance-voltage (CV) measurements are a widely used technique in silicon detector physics. It gives direct information about the full depletion voltage and the effective do** concentration. However, for highly irradiated sensors, the measured data differs significantly from the usual shape which makes the extraction of the afore mentioned parameters less precise to not possible. We present a…
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Capacitance-voltage (CV) measurements are a widely used technique in silicon detector physics. It gives direct information about the full depletion voltage and the effective do** concentration. However, for highly irradiated sensors, the measured data differs significantly from the usual shape which makes the extraction of the afore mentioned parameters less precise to not possible. We present an explanation for the obseved frequency dependence and based on that, a method to extract the desired sensor parameters.
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Submitted 23 January, 2023;
originally announced January 2023.
